TWI521653B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TWI521653B
TWI521653B TW100105916A TW100105916A TWI521653B TW I521653 B TWI521653 B TW I521653B TW 100105916 A TW100105916 A TW 100105916A TW 100105916 A TW100105916 A TW 100105916A TW I521653 B TWI521653 B TW I521653B
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TW
Taiwan
Prior art keywords
semiconductor device
heat dissipating
component
semiconductor
heat
Prior art date
Application number
TW100105916A
Other languages
English (en)
Other versions
TW201205737A (en
Inventor
Yukari Imaizumi
Goshi Kawazu
Isao Kudo
Akio Katsumata
Yoichi Hiruta
Original Assignee
J Devices Corp
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Publication date
Application filed by J Devices Corp filed Critical J Devices Corp
Publication of TW201205737A publication Critical patent/TW201205737A/zh
Application granted granted Critical
Publication of TWI521653B publication Critical patent/TWI521653B/zh

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
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Description

半導體裝置
本發明係有關一種半導體裝置，尤指一種設置有半導體元件動作時釋放熱量之散熱組件的半導體裝置。
近年隨著使用半導體之電子機器的高性能化，需要高速動作的半導體裝置，而半導體元件工作時的熱量因而增加。當半導體元件溫度變高，會發生半導體元件的誤動作而降低動作的可靠度，故半導體元件動件時所釋放熱量的散熱手段即為必要。
圖1係未裝設散熱組件之傳統半導體裝置截面圖。
傳統半導體裝置10在基板1以接著劑2裝設有半導體元件3，半導體元件3與基板1係以金或銅等銲接線4材料連接。此種半導體元件3的周圍以環氧樹脂為主要原料的密封組件5加以密封。這種半導體裝置10在半導體元件3動作時所產生的熱，會傳達到半導體元件3上的密封組件5，再經由空氣的路徑將密封組件5表面的熱散發出去。
另外，如圖2及圖3所示，為了提高半導體裝置20、30的散熱性，在密封組件5表面設有金屬等散熱組件7、31，可使密封組件5的熱傳導率向上提升[3W/mK]的程度，以改善其散熱性。這種設有散熱組件的半導體裝置比沒有裝設散熱組件的半導體裝置相比較，可減少10～15%幅度的熱阻抗。
專利文獻1揭露一種在半導體元件上以導電性塗膏接著散熱板，並以散熱板邊緣上方之散熱板壓制部固定。根據此例，半導體元件所產生的熱可藉導電性塗膏接著之散熱板傳導，經由配置於散熱板上的散熱片等散熱手段自空氣的熱傳達路徑釋放出去。
另外，專利文獻2揭露在半導體元件上，以接著劑將片狀散熱板覆蓋於半導體元件上之範例。根據範例，半導體元件將所產生的熱經由接著劑接著之散熱板傳導，經散熱板由空氣的熱傳達路徑散熱出去。
先前技術文獻
專利文獻1：特開2007─305761号公報
專利文獻2：特開2001-210761号公報
但對應於近年電子機器的薄型化及小型化，半導體裝上即無法裝設散熱片，且無法裝設的情況越來越多，在此情況下為使半導體元件溫度降低，即須有其他降低半導體裝置熱阻抗的手段。此種手段方式如圖2及圖3所示之先前技藝的半導體裝置，在半導體裝置密封組件表面裝設有金屬等散熱組件7、31露出於空氣中，於半導體元件3與散熱組件7、31之間具有數十至數百μ厚度的密封組件5，可使密封組件5的熱傳導率向上提升，由於此種密封組件5的熱傳導率約比金屬等的熱傳導率低0.5～3[W/mK]，其熱阻抗大，使得半導體元件3所產生的熱在密封組件5內部無法充分擴散。另外，傳統之散熱組件7、31裝設於半導體裝置上並露出於空氣中的半導體裝置20、30，但半導體元件3上所產生的熱，由於受限於傳達至散熱組件7、31的散熱面積，半導體裝置表面並無法獲得充分的散熱效果。
因此，此種傳統的構造無法使半導體裝置20、30表面獲得充分的散熱，使得半導體元件3降低溫度上升的手段遭遇瓶頸。
本發明目的係為使半導體元件動作時的熱有效的在密封組件內部擴散，改善半導體裝置的散熱性，減少熱阻抗。
本發明實施例之一係有關半導體裝置，其中設置有基板，基板上配置有半導體元件，半導體元件上配置有散熱組件，以及覆蓋基板上部，半導體元件及散熱組件的密封組件，該散熱組件被配置於該半導體元件面的表面積，較該半導體元件面用於配置該散熱組件的表面積大。
另外，本發明實施例之一為有關於半導體裝置，散熱組件可為一只或亦可由複數個積層之組件形成。
本發明另一實施例為關於半導體裝置，其散熱組件側面形狀亦可為凹凸。
本發明另一實施例為關於半導體裝置，其散熱組件側面形狀亦可為平坦。
本發明另一實施例為關於半導體裝置，其散熱組件亦可用接著劑將其固定於半導體元件上。
本發明另一實施例為關於半導體裝置，其散熱組件亦可用接著劑固定於積層在半導體元件上的半導體元件上。
本發明另一實施例為關於半導體裝置，其散熱組件亦可用接著劑固定於積層在半導體元件上之間隔物上。
本發明另一實施例為關於半導體裝置，其接著劑亦可用油脂。
本發明另一實施例為關於半導體裝置，其接著劑亦可為熱介質材料。
本發明另一實施例為關於半導體裝置，其接著劑亦可為膏狀材料。
本發明另一實施例為關於半導體裝置，其配置散熱組件之半導體元件表面可為非平坦者。
本發明另一實施例為關於半導體裝置，其配置散熱組件之半導體元件表面亦可為凹凸者者。
本發明另一實施例為關於半導體裝置，其配置散熱組件之半導體元件表面亦可為具有狹切槽者。
本發明另一實施例為關於半導體裝置，其配置散熱組件之半導體元件表面亦可為具有孔洞者。
本發明係有關一種半導體裝置，將散熱組件埋入密封組件內部，利用比傳統散熱組件面積小的散熱組件，使半導體元件動作時的熱有效的擴散於密封組件內部，以改良半導體裝置的散熱性，減低熱阻抗。
以下係參照圖式說明本發明之實施例。但實施例中，相同符號之相同構造要件，其實施例之間的重複說明將予省略。
(實施例1)
本發明實施例1係有關參照圖示說明之半導體裝置。
(半導體裝置的構成)
圖4A及圖4B係有關實施例1半導體裝置100的概略構造的示意圖。圖4A係半導體裝置100的概略構造的平面示意圖，圖4B係從圖4A之A-A′線所見之半導體裝置100的截面圖。圖4A及圖4B所示之半導體裝置100係包含基板101，以接著劑102配置於基板101上之半導體元件103，以接著劑102A配置於半導體元件103上之散熱組件107，及以包覆著基板101上部與半導體元件103及散熱組件107的密封組件105。
實施例1之半導體裝置的製造方法，首先於搭載於基板101之半導體元件103上面，例如，以銀膏等接著劑102A搭載散熱組件107。此種接著劑102A並不限於銀膏，亦可用片狀物，但以使用高熱傳導率者為佳。再者，對於散熱組件107，須使用具有熱傳導率高於密封組件105之材料，例如，使用銅等材料。此種散熱組件107之材料使用其他金屬或陶磁等亦可。如此製造之基板101上的半導體元件103及散熱組件107以密封組件105加以密封，製造成在密封組件105內部埋設有散熱組件107之半導體裝置100。密封組件105亦可例如以樹脂製成。
如圖4A所示，散熱組件107形成的面積大於半導體元件103散熱面(圖中上方)之面積。圖4A中，散熱組件107的形狀如圖8所之正方形，但散熱組件107的形狀不限於此種形狀，只要散熱組件的半導體元件配置面的面積大於半導體元件的散熱面，改為其他適當的形狀亦可。散熱組件其他形狀的具體例，例如圖9至圖13所示，圓形，多角形等。
如圖4B所示，實施例1相關之半導體裝置100中，散熱組件107的表面並未露出半導體裝置100的表面。散熱組件107係全部埋入密封組件的內部，由半導體元件103傳導至散熱組件107的熱，並非立即傳達至大氣中，而是自密封組件內部，經由半導體裝置表面上傳達至大氣的路徑中將熱釋放出來。
傳統的半導體裝置10，20，30半導體元件3上所產生熱的散熱路徑，由於使用熱傳導率低的密封組件5，無法在密封組件5內部充分的擴散，另外，在半導體裝置上部搭載有散熱組件7，31的半導體裝置20，30因受限於半導體元件3上所產生熱傳達至散熱組件7，31的散熱面積，而無法獲得充分的散熱效果。然而，本發明有關之半導體裝置100係利用面積較大於密封組件105內部半導體元件103散熱面積的散熱組件107，將其配置於半導體元件103附近，使半導體元件103所產生的熱經由散熱組件107有效的擴散至半導體元件103上的密封組件105的內部，即可由加大的散熱面積，改善半導體裝置100的散熱特性。
根據上述之本發明，在半導體元件103上搭載熱傳導率大於半導體元件103的散熱組件107，及半導體元件103所產生的熱傳導至半導體元件103上的密封組件105，尤其是利用密封組件105內部橫向有效的熱擴散，即可擴大其散熱路徑。因此，本發明有關之半導體裝置100，與圖2或圖3所示之傳統半導體裝置在密封組件5上露出散熱組件7，31之半導體裝置20，30相比較，更能降低半導體裝置的熱阻抗θja。
根據圖14至16圖所示熱解析結果，對本發明實施例相關半導體裝置的散熱特性與傳統裝有散熱組件之半導體裝置加以比較說明。
圖14係有關圖4所示之本發明半導體裝置的構造，散熱組件107的一邊長度依10[mm]，20[mm]，27.7[mm]加以變更，且散熱組件107的厚度依0.3[mm]，0.5[mm]，0.7[mm]加以變更，利用熱流體分析軟體，根據JEDEC標準對半導體裝置熱阻抗θja[度C/W]分析結果的表示圖。
圖14係分析本發明實施例及傳統之半導體裝置，其半導體裝置一邊長度同為31[mm]，半導體元件的一邊長度同為8[mm]，使用如圖8所示正方形形狀之銅散熱組件加以分析。並將圖14所示各圖數值表列於圖17。但圖14所示傳統的數值之散熱組件厚度為0.3[mm]，散熱組件一邊的長度為27.7[mm]，且密封組件105的熱傳導率為3.1W/mK的情形，其熱阻抗θja為9‧3[度C/W]。
圖14係使用一邊長度約27.7[mm]的散熱組件的情形，本發明實施例有關之θja與傳統構造有關之半導體裝置相比較，θja約降低14%。另外，傳統半導體裝置在使用一邊長度約27.7[mm]的散熱組件，而本發明實施例使用一邊長度約15[mm]的散熱組件的情形下，由於其θja數值相等，顯示本發明實施例使用較傳統半導體裝置為小的散熱組件，亦可獲得相同的散熱效果。
接著，圖15係本發明如圖4所示之相關半導體裝置構造，其散熱組件107的一邊長度依10[mm]，16[mm]，20[mm]，27.7[mm]加以變更，且散熱組件107的厚度依0.3[mm]0.5[mm]0.7[mm]加以變更，利用熱流體分析軟體，根據JEDEC標準對半導體裝置熱阻抗θja[度C/W]分析結果的表示圖。
圖15分析本發明實施例及傳統之半導體裝置，其半導體裝置一邊長度同為31[mm]，半導體元件的一邊長度同為8[mm]，使用如圖8所示正方形形狀之銅散熱組件加以分析。並將圖15所示各圖數值表列於圖18。但圖15所示傳統的數值之散熱組件厚度為0.3[mm]，散熱組件一邊的長度為27.7[mm]，且密封組件105的熱傳導率為3.1W/mK的情形，其熱阻抗θja為1.74[度C/W]。
根據圖15所示θjc之分析結果，一邊長度約為27.7[mm]之散熱組件，使用相同尺寸之本發明半導體裝置的θjc比傳統構造的θjc約降低42%。因此，顯然本發明實施例相關半導體裝置使用同樣大小的散熱組件的情況下，比傳統半導體裝置可大幅降低熱阻抗。
另外，圖16係以圖4之本發明相關半導體裝置構造，使用樹脂材料之密封組件105，其傳導率依0.6[W/mk]1.0[W/mk]3.1[W/mk]變更，且散熱組件107厚度t依0.3[mm]，0.5[mm]，0.7[mm]變更，滿足圖14所示傳統半導體裝置使用一邊長度為27.7[mm]之散熱組件θja的散熱組件的面積比的示意圖。
圖16係以本發明實施例之半導體裝置為對象加以分析，其半導體裝置一邊長度同為31[mm]，半導體元件的一邊長度同為8[mm]，使用如圖8所示正方形形狀之銅合金散熱組件加以分析。並將圖16所示各圖數值表列於圖19。圖16右上方所記載之方程式y≧224‧0x-0‧5係表示本發明相關散熱組件厚度：y[mm]與散熱組件半導體元件之相對面積比：表示與x之關係的方程式。該方程式如圖16之斜線領域內所示。滿足該方程式之xy數值之半導體裝置，較傳統半導體裝置具有較佳之降低熱阻抗的效果。但圖16的分析結果僅是本實施例半導體裝置較傳統半導體裝置具有較佳降低熱阻抗效果之一例而已。例如，圖16中以比實施例半導體裝置的一邊長度較短的半導體裝置為對象加以分析，在相同的情況下分析，或者，在圖16中，以使用比實施例半導體裝置的熱傳導率較高的密封組件的半導體裝置為對象加以分析，以相同的情況加以分析，即使比圖16斜線領域中所示散熱組件厚度較小，及散熱組件面積較小的情況，仍可獲得與傳統半導體裝置同等的散熱效果。
因此，根據本發明實施例1，在使用與傳統半導體裝置相同物理性的散熱組件的情況下，使用比傳統半導體裝置較小面積的散熱組件，仍可獲得與傳統相同的散熱效果。另外，由於本發明相關半導體裝置的全部表面係以密封組件105覆蓋，此與露出傳統半導體裝置表面以金屬等形成之散熱組件相比較，可改善半導體裝置表面的熱的散熱率及斑痕，並可降低半導體裝置的不良外觀。
(實施例2)
本發明實施例參照如圖示說明之半導體裝置200。本發明實施例2係如前述實施例1半導體裝置100，於散熱組件107及半導體元件103之間配置間隔物201為例加以說明。
圖5係有關實施例2半導體裝置200之概略構造的截面圖。另外，實施例2之半導體裝置200係於散熱組件107與半導體元件103之間配置有間隔物201為其特徵，其他構造之說明與實施例1之構造相同，其他構造或半導體裝置200的製造方法或實施例2有關半導體裝置200的散熱特性等相關圖示及說明亦省略。
如圖5所示，實施例2係有關半導體裝置200散熱組件107與半導體元件103之間配置有一間隔物201為其特徵。如圖5所示，與實施例1半導體裝置100相同的半導體裝置構造內的半導體元件103上，為確保銲接線104的高度，可搭載有間隔物201。間隔物201之材料為，例如以使用矽膠等為佳。圖5中，半導體元件103與散熱組件107之間係利用接著劑102A，102C搭載間隔物201為例，亦可於散熱組件107與間隔物201之間利用接著劑102A加以固定，亦可利用半導體元件103與基板101之間固定用之接著劑102B的相同物件，亦可使用不同材料製成之接著劑。
再者，本發明實施例2有關之間隔物201的形狀並不限於如圖5所示間隔物201的形狀。間隔物201之形狀只要能保持連接半導體元件103與基板101之銲接線104的高度，亦可為其他形狀。其他構造及製造方法與實施例1相同。根據本發明實施例2，在保持半導體元件103與基板101之間的銲接線104高度的情況下，藉由本發明之散熱組件107，可獲得極佳的散熱特性。
(實施例3)
本發明實施例3有關之半導體裝置參照圖示之說明。本發明實施例3係於前述實施例1相關之半導體裝置100，於散熱組件107與半導體元件103之間另配置半導體元件203之構造例加以說明。
圖6係有關實施例3有關之半導體裝置300的概略構造的圖示。另外，實施例3有關之半導體裝置300係於散熱組件107與半導體元件103之間另配置有半導體元件203為其特徵，其他構造或半導體裝置200的製造方法或實施例3有關的半導體裝置300的散熱特性等相關圖示及說明則省略。
圖6所示係實施例3有關之半導體裝置300，於散熱組件107與半導體元件103之間另配置有半導體元件203為其特徵。本發明有關半導體裝置配置半導體元件並不限於一個，亦可配置積層之複數個半導體元件。圖6係有關本發明實施例3半導體元件203晶片積層實施例的構造截面圖。二只半導體元件103及203的積層係以銲料凸點等接續端子301為電氣連接，此種接續端子之間係以所謂的下方填充劑樹脂202加以密封。上方的半導體元件203則以實施例1相同的接著劑102A連接散熱組件107，並將散熱組件107全部埋入密封組件105內部而加以密封。
圖6係上方的半導體元件203與下方的半導體元件103的晶片積層實施例圖示，但不限於本發明實施例3半導體裝置積層構造例。其他構造及製造方法與實施例1相同。
根據本發明實施例3，搭載複數個半導體元件的高性能半導體裝置，以及根據本發明散熱組件107，可獲得良好散熱特性的半導體裝置。
(實施例4)
本發明實施例4相關半導體裝置400係參照圖示說明。本發明實施例4係於前述實施例1半導體裝置100中，將散熱組件構造加以改變為例之說明。
圖7A、B係實施例4相關半導體裝置400的概略構造圖示說明。另外，實施例4的半導體裝置400之散熱組件107係由複數個組件形成者為特徵，由於其他構造與實施例1說明之構造相同，其他的構造或半導體裝置400的製造方法或實施例4相關半導體裝置400的散熱特性等有關圖示及說明予以省略。
如圖7A、B所示之實施例4相關半導體裝置400，500，其散熱組件係由複數個組件407A～D或507A～D所形成為特徵，本發明半導體裝置之散熱組件並不限於一只，複數個組件亦可。圖7A、B係搭載複數個散熱組件之本發明半導體裝置的截面構造圖示。複數個組件407A～D或507A～D係利用接著劑或熱介面材料(TIM)401A～C等使其相互連接，散熱組件則全部埋入密封組件105內部而加以密封。
實施例4有關之複數個組件所形成之散熱組件係如圖7A所示，散熱組件的側面亦可為凹凸之積層。另外，複數個組件所形成之散熱組件107係如圖7B所示，散熱組件側面亦可為平坦的積層。其他的構造及製造方法與實施例1相同。
根據本發明實施例4，以複數個組件407A～D或507A～D積層製造成所需厚度之散熱組件，可獲得與實施例1相同效果之半導體裝置。另外，如圖7A，將複數個散熱組件的中心位置偏移並積層，使其側面具有凹凸，以增加散熱組件107及密封組件105之連接面積，可改善散熱組件107與密封組件105的密接性。
(實施例5)
本發明實施例5之相關半導體裝置參照圖示說明。本發明實施例5係以改變前述實施例1之半導體裝置100的散熱組件107外部形狀而加以說明。
圖8至圖13係以實施例5有關之半導體裝置配置之散熱組件107的外部形狀為例加以說明。另外，實施例5相關之半導體裝置，其半導體元件103所配置之散熱組件107的表面非平坦係為其特徵，其他構造與實施例1所說明之構造相同，故其他構造或半導體裝置製造方法或實施例5相關半導體裝置的散熱特性等相關圖示及說明予以省略。
實施例5有關之半導體裝置所配置之散熱組件外部平面的形狀，可為如圖8所示之正方形的散熱組件700，亦可如圖9所示之圓形的散熱組件800，亦可如圖10所示之多角形之散熱組件900。圖10所示係正六角形之散熱組件900，但第5實施例所配置之多角形散熱組件並不限於此，亦可為其他多角形之形狀。
再者，實施例5有關半導體裝置所配置之散熱組件外部形狀，如圖11截面圖所示之散熱組件1000，半導體元件103配置的散熱組件面有凹凸部1001，亦可具有複數個小圓形或多角形的小凹部，或如圖12截面圖所示散熱組件1100，半導體元件103配置之散熱組件面有狹切槽1101，或亦可如圖13所示散熱組件1200，半導體元件103配置之散熱組件面有孔1201。再者，半導體元件103所配置之散熱組件面的凹凸部1001或狹切槽1101或孔1201，具有一個或複數個皆可，其他構造及製造方法與實施例相同。
根據本發明實施例5半導體元件103所配置之散熱組件的非平坦面，可改善散熱組件的非平坦面與接著劑102A的密著性，而使半導體裝置的半導體元件103與散熱組件接著性獲得改善。
另外，上述實施例1～5所示散熱組件亦可使用矽膠。以具有極佳熱傳導率的矽膠作為散熱組件107的材料，而使用本發明之散熱組件即可獲致散熱特性極佳之半導體裝置。
(實施例6)
本發明實施例6相關之半導體裝置參照圖面加以說明。本發明實施例6係如前述實施例1相關之半導體裝置100，對複數個半導體元件103並列配置加以說明。另外，實施例6係有關半導體裝置600，複數個半導體元件103於同一基板101上並列配置為其特徵，其他構造與實施例1說明之構造相同，其他的構造或半導體裝置600的製造方法或實施例6相關半導體裝置600的散熱特性等相關圖示及說明予以省略。
圖20A及圖20B係實施例6相關半導體裝置600的概略構造的圖示。圖20A係半導體裝置600的概略構造的平面圖示，圖20B係圖20A中B-B′線所見半導體裝置600的截面圖。圖20A與圖20B中，半導體裝置600設有基板101、以接著劑102B於基板101上所並列配置的複數個半導體元件103、以接著劑102A於半導體元件103上所配置的散熱組件107、以及用於覆蓋基板101上部之半導體元件103及散熱組件107的密封組件105。圖20中，半導體元件103雖以配置兩個之圖示為例，亦可並列配置兩個以上半導體元件103。
根據本發明實施例6，在並列配置著複數個半導體元件103的半導體裝置600上，藉由在複數個半導體元件103上搭載比各半導體元件103之熱傳導率高的一個散熱組件107，當各半導體元件103所產生的熱一起傳導至各半導體元件103上的密封組件105時，尤其是密封組件105內部橫向的有效熱擴散，可使半導體元件103到密封組件105表面的散熱面積，即散熱路徑增大。
本發明一實施例相關之半導體裝置係設有基板，基板上配置有半導體元件，半導體元件上配置有散熱組件，基板的上部，半導體元件，及散熱組件，並以密封組件加以覆蓋，散熱組件上配置半導體元件之面的表面積，亦可較半導體元件上配置散熱組件之面的表面積大。
另外，本發明一實施例相關之半導體裝置之散熱組件可為矽膠。
另外，本發明一實施例相關之半導體裝置係一個散熱組件或亦可由複數個積層組件形成者。
另外，本發明一實施例相關之半導體裝置係具有側面為凹凸形狀之散熱組件。
另外，本發明一實施例相關之半導體裝置係具有平坦形狀之散熱組件。
另外，本發明一實施例相關之半導體裝置係具有，散熱組件配置於半導體元件上的表面積相對於半導體元件上用於配置散熱組件的表面積之比值x，與散熱組件厚度y的關係可為y≧224‧0x-0‧5。
另外，本發明一實施例相關之半導體裝置係可將散熱組件以接著劑固定於半導體元件上。
另外，本發明一實施例相關之半導體裝置係可將散熱組件以接著劑固定於半導體元件上之積層半導體元件上。
另外，本發明一實施例相關之半導體裝置係可將散熱組件以接著劑固定於半導體元件上之積層間隔物上。
另外，本發明一實施例相關之半導體裝置係可使用具有油脂之接著劑。
另外，本發明一實施例相關之半導體裝置係可使用具有熱介面材料之接著劑。
另外，本發明一實施例相關之半導體裝置係可使用膏狀之接著劑。
另外，本發明一實施例相關之半導體裝置係可將散熱組件配置於有非平坦面的半導體元件上。
另外，本發明一實施例相關之半導體裝置係可將散熱組件配置於有凹凸面的半導體元件上。
另外，本發明一實施例相關之半導體裝置係可將散熱組件配置於有狹切槽面的半導體元件上。
另外，本發明一實施例相關之半導體裝置係可將散熱組件配置於有狹切槽面的半導體元件上。
100、200、300、400．．．半導體裝置
101．．．基板
103、203．．．半導體元件
107、407A～D、507A～D．．．散熱組件
105．．．密封組件
102A～C、401A～C．．．接著材料
201．．．間隔物
1001．．．凸凹部
1101．．．狹切槽
1201．．．孔
圖1係未裝設傳統散熱組件之半導體裝置之截面圖。
圖2係一裝設有傳統散熱組件之半導體裝置之截面圖例示。
圖3係一裝設有傳統散熱組件之半導體裝置之截面圖例示。
圖4A係有關本發明實施例1半導體裝置之概略構造平面圖示。
圖4B係圖4A之A-A′線關聯之截面圖。
圖5係本發明實施例2有關之半導體裝置的斷剖面圖。
圖6係本發明實施例2有關之半導體裝置的剖面圖。
圖7係發明實施例4有關之半導體裝置的剖面圖。
圖8係本發明其他實施例有關之半導體裝置的散熱組件外形變更例示之平面圖。
圖9係本發明其他實施例有關之半導體裝置的散熱組件外形變更例示之平面圖。
圖10係本發明其他實施例有關之半導體裝置的散熱組件外形變更例示之平面圖。
圖11係本發明其他實施例有關之半導體裝置的散熱組件外形變更例示之剖面圖。
圖12係本發明其他實施例有關之半導體裝置的散熱組件外形變更例示之剖面圖。
圖13係本發明其他實施例有關之半導體裝置的散熱組件外形變更例示之平面圖。
圖14係有關本發明實施例之半導體裝置，其散熱組件一邊的長度及厚度分別改變的熱阻抗θja的解析結果的示意圖。
圖15係有關本發明實施例之半導體裝置散熱組件，其一邊的長度及厚度分別改變的情況下，其相關熱阻抗θja的示意圖。
圖16係有關本發明實施例之半導體裝置，其散熱組件一邊的長度及密封部熱傳導率分別改變的情況下，要達成傳統半導體裝置相同θja值之半導體元件面積與散熱組件面積對比之示意圖。
圖17係圖14所示各圖之列表。
圖18係圖15所示各圖之列表。
圖19係圖16所示各圖之列表。
圖20A係有關本發明實施例6半導體裝置的概略構造平面圖。
圖20B係圖20A的B-B′線截面圖。
100．．．半導體裝置
101．．．基板
103．．．半導體元件
107、A～B．．．散熱組件
105．．．密封組件
102A～B．．．接著材料

Claims (8)

  1. 一種半導體裝置，包含一基板；一半導體元件配置於該基板上；一散熱組件配置於該半導體元件上；及一密封組件用於覆蓋該基板的上部、該半導體元件與該散熱組件，其中該散熱組件係埋設於該密封組件內部，其中該散熱組件之上面及側面皆不露出於該密封組件之外部；其中形成該散熱組件的一個或積層之複數個組件係全部由金屬構成，該散熱組件上被配置於該半導體元件面的表面積，較該半導體元件上用於配置該散熱組件面的表面積大。
  2. 根據請求項1所述之半導體裝置，其中該散熱組件係以接著劑固定於該半導體元件上。
  3. 根據請求項1所述之半導體裝置，其中該散熱組件係以接著劑固定於積層於該半導體元件上的半導體元件上。
  4. 根據請求項1所述之半導體裝置，其中該散熱組件係以接著劑固定於積層於該半導體元件上的間隔物上。
  5. 根據請求項2或3或4之任一項所述之半導體裝置，其中該接著劑係油脂，熱介面材料或膏狀。
  6. 根據請求項1或2或3或4或5之任一項所述之半導體裝置，其中該散熱組件被配置於該半導體元件之面並非平坦。
  7. 根據請求項6所述之半導體裝置，其中該散熱組件被配置於該半導體元件之面具有凹凸狀。
  8. 根據請求項6所述之半導體裝置，其中該散熱組件被配置於該半導體元件之面具有狹切槽或孔。
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