CN102347294B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN102347294B
CN102347294B CN201110061649.0A CN201110061649A CN102347294B CN 102347294 B CN102347294 B CN 102347294B CN 201110061649 A CN201110061649 A CN 201110061649A CN 102347294 B CN102347294 B CN 102347294B
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semiconductor device
thermal component
semiconductor element
semiconductor
thermal
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CN102347294A (zh
Inventor
今泉有加里
河津刚史
工藤功
胜又章夫
蛭田阳一
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Rely On Technology Japan Co
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J Devices Corp
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Abstract

本发明提供一种使半导体元件操作时的热量在密封部件的内部有效地扩散、实现半导体装置的散热性的提高和热阻的降低的半导体装置。在半导体装置中，具备：基板；配置在基板上的半导体元件；配置在半导体元件上的散热部件；以及覆盖基板的上部、半导体元件和散热部件的密封部件，其特征在于散热部件的配置在半导体元件上的表面的表面积比半导体元件的配置有散热部件的表面的表面积大。根据本发明的半导体装置，通过将散热部件掩埋在密封部件的内部，可以利用比现有的散热部件的面积更小的散热部件而使半导体元件操作时的热量在密封部件的内部有效地扩散，提高半导体装置的散热性并降低热阻。

Description

半导体装置
技术领域
本发明涉及一种半导体装置，特别地涉及一种具有用于释放半导体元件操作时的热量的散热部件的半导体装置。
背景技术
近年来，随着使用半导体装置的电子设备的高性能化，需要高速操作的半导体装置，半导体元件操作时产生的热量增加。如果半导体元件的温度变高，在半导体元件操作时会发生误操作而降低操作的可靠性，因此需要用于释放半导体元件操作时产生的热量的装置。
图1表示未搭载散热部件的现有的半导体装置的截面图。
在现有的半导体装置10中，半导体元件3通过粘结剂2搭载在基板1上，半导体元件3与基板1由以金或铜等为材料的键合引线4连接。在这种半导体元件3中，利用以环氧树脂等为主要原料的密封部件5对周围进行密封。在这种半导体装置10中，在半导体元件3操作时产生的热量经由这样的路径散热：热量热传导到半导体元件3上的密封部件5、再从密封部件5表面热传导至大气中。
另外，如图2和图3所示，为了提高半导体装置20、30的散热性，存在这样的方法：在密封部件5的表面搭载由金属等构成的散热部件7、31，使密封部件5的热传导率提高到3[W/mK]左右，由此改善散热性。与没有散热部件的半导体装置相比，具有这种散热部件的半导体装置的热阻可以减小10～15％左右。
在专利文献1中，记载了这样的例子：在半导体芯片上通过导电性导热胶粘结散热板，散热板的边缘部分的上表面一侧由散热板按压部保持。根据该例子，半导体芯片所产生的热量经由这样的路径释放：热量经由导电性导热胶传导至散热板，再从配置于散热板上的散热器等散热装置热传导至大气中。
另外，在专利文献2中记载了这样的例子：通过粘结剂以覆盖半导体芯片的方式将片状的散热板配置在半导体芯片上。根据该例子，半导体芯片所产生的热量经由这样的路径释放：热量经由粘结剂传导至散热板，再从散热板热传导至大气中。
【专利文献】
专利文献1：日本特开2007-305761号公报
专利文献2：日本特开2001-210761号公报。
发明内容
(发明所要解决的问题)
但是，为了应对近年来电子设备的薄型化/小型化，在半导体装置上不搭载散热器或无法搭载散热器的情况越来越多，人们希望在这种情况下实现使半导体元件的温度进一步降低、也就是使半导体装置的热阻降低的装置。作为这种装置，如图2或图3所示的现有的半导体装置那样，在以暴露于大气的方式在密封部件表面搭载有由金属等构成的散热部件7、31的半导体装置中，在散热部件7、31与半导体元件3之间夹着数十至数百[μ]厚度的密封部件5，这种密封部件5的热传导率为0.5～3[W/mK]左右，比金属等的热传导率低，因此热阻大，半导体元件3所产生的热量无法在密封部件5内部充分地扩散。另外，在现有的将散热部件7、31以暴露于大气的方式搭载在半导体装置上部的半导体装置20、30中，半导体元件3上所产生的热量受到达散热部件7、31的散热面积所限，无法获得从半导体装置表面充分地散热的效果。
因此，在这种现有的结构中，无法从半导体装置20、30表面充分地散热，作为用以降低半导体元件3温度的装置受到限制。
本发明的目的是使半导体元件操作时的热量在密封部件内部有效地扩散，实现半导体装置散热性的提高以及热阻的减小。
(解决问题的手段)
本发明一个实施方式的半导体装置的特征是具备：基板；配置在基板上的半导体元件；配置在半导体元件上的散热部件；以及覆盖基板上部、半导体元件和散热部件的密封部件，其中，散热部件的配置于半导体元件上的表面的表面积比半导体元件的配置有散热部件的表面的表面积大。
另外，在本发明的一个实施方式的半导体装置中，散热部件可以由一个部件或由层叠的多个部件构成。
另外，在本发明的一个实施方式的半导体装置中，散热部件的侧面的形状可以为凹凸状。
另外，在本发明的一个实施方式的半导体装置中，散热部件的侧面的形状可以为平坦状。
另外，在本发明的一个实施方式的半导体装置中，散热部件可以通过粘结剂固定在半导体元件上。
另外，在本发明的一个实施方式的半导体装置中，散热部件可以通过粘结剂固定在层叠于半导体元件上的半导体元件上。
另外，在本发明的一个实施方式的半导体装置中，散热部件可以通过粘结剂固定在层叠于半导体元件上的间隔件上。
另外，在本发明的一个实施方式的半导体装置中，粘结剂可以是导热脂。
另外，在本发明的一个实施方式的半导体装置中，粘结剂可以是热界面材料。
另外，在本发明的一个实施方式的半导体装置中，粘结剂可以是导热胶。
另外，在本发明的一个实施方式的半导体装置中，散热部件的配置在半导体元件上的表面可以是非平坦的。
另外，在本发明的一个实施方式的半导体装置中，散热部件的配置在半导体元件上的表面可以具有凹凸。
另外，在本发明的一个实施方式的半导体装置中，散热部件的配置在半导体元件上的表面可以具有狭缝。
另外，在本发明的一个实施方式的半导体装置中，散热部件的配置在半导体元件上的表面可以具有孔。
(发明的效果)
根据本发明，在半导体装置中，通过将散热部件掩埋在密封部件内部，可以利用比现有的散热部件的面积更小的散热部件来使半导体元件操作时的热量在密封部件的内部有效地扩散，从而可以提高半导体装置的散热性并降低热阻。
附图说明
图1是表示现有的未搭载散热部件的半导体装置的截面图。
图2是表示现有的搭载散热部件的半导体装置的一个例子的截面图。
图3是表示现有的搭载散热部件的半导体装置的一个例子的截面图。
图4(A)是表示本发明的实施方式1的半导体装置的示意性结构的俯视图，图4(B)是在图4(A)中A-A′线处的截面图。
图5是本发明的实施方式2的半导体装置的截面图。
图6是本发明的实施方式3的半导体装置的截面图。
图7(A)和(B)是本发明的实施方式4的半导体装置的截面图。
图8是表示在本发明的另一个实施方式的半导体装置中，改变了散热部件的外形的例子的俯视图。
图9是表示在本发明的另一个实施方式的半导体装置中，改变了散热部件的外形的例子的俯视图。
图10是表示在本发明的另一个实施方式的半导体装置中，改变了散热部件的外形的例子的俯视图。
图11是表示在本发明的另一个实施方式的半导体装置中，改变了散热部件的外形的例子的截面图。
图12是表示在本发明的另一个实施方式的半导体装置中，改变了散热部件的外形的例子的截面图。
图13是表示在本发明的另一个实施方式的半导体装置中，改变了散热部件的外形的例子的俯视图。
图14是表示在本发明的实施例的半导体装置中，分别改变散热部件的一边的长度和厚度并分析热阻θja的结果的图。
图15是表示在分别改变了本发明的实施例的半导体装置的散热部件的一边的长度和厚度时的热阻θjc的图。
图16是表示在本发明的实施例的半导体装置中，在分别改变了散热部件的厚度和密封部件的热传导率时，实现与现有的半导体装置相同的θja值时的散热部件的面积与半导体元件的面积的面积比的图。
图17是表示图14所示的各个图表的数值的表。
图18是表示图15所示的各个图表的数值的表。
图19是表示图16所示的各个图表的数值的表。
图20(A)是表示本发明的实施方式6的半导体装置的示意性结构的俯视图，图20(B)是在图20(A)中的B-B′线处的截面图。
(附图标记说明)
100、200、300、400：半导体装置；101：基板；103、203：半导体元件
107、407A～407D、507A～507D：散热部件；105：密封部件；
102A～102C，401A～401C：粘结材料；201：间隔件；1001：凸凹；
1101：狭缝；1201：孔
具体实施方式
以下参照附图说明本发明的实施方式。在实施方式中，对相同的构成要件附以相同的附图标记，并省略实施方式之间重复的说明。
(实施方式1)
参照附图说明本发明的实施方式1的半导体装置。
(半导体装置的结构)
图4(A)和图4(B)是表示实施方式1的半导体装置100的示意性结构的图。图4(A)是表示半导体装置100的示意性结构的俯视图，图4(B)是在图4(A)中所示的A-A′线处观察的半导体装置100的截面图。图4(A)和图4(B)中，半导体装置100具备：基板101；通过粘结剂102B配置在基板101上的半导体元件103；通过粘结剂102A配置在半导体元件103上的散热部件107；以及覆盖基板101的上部、半导体元件103和散热部件107的密封部件105。
实施方式1的半导体装置的制造方法是：首先，在搭载在基板101上的半导体元件103的上表面，通过例如银导热胶等的粘结剂102A搭载散热部件107。所述粘结剂102A并不限于银导热胶，也可以是片状的，但优选使用热传导率尽可能高的材料。另外，对于散热部件107，使用热传导率高于密封部件105的材料，例如铜等材料。所述散热部件107的材料也可以使用其它金属或陶瓷等。通过用密封部件105对这样制造的基板101上的半导体元件103和散热部件107进行密封，来制造散热部件107掩埋在密封部件105内部的半导体装置100。密封部件105可以由例如树脂制成。
如图4(A)所示，散热部件107被形成为具有比半导体元件103的发热面(图中上表面)的面积大的面积。在图4(A)中，散热部件107的形状是如图8所示的正方形，但散热部件107的形状不限于这种形状，只要散热部件的配置在半导体元件上的表面比半导体元件的发热面的面积大即可，也可以适当地改为其它的形状。散热部件的其它形状的具体例子例如有图9至图13所示的圆形、多边形等。
如图4(B)所示，在实施方式1的半导体装置100中，散热部件107的表面并未在半导体装置100的表面露出。散热部件107的整体掩埋在密封部件的内部，由半导体元件103传导至散热部件107的热量并不是直接传导至大气中，而是经由这样的路径释放：热量在密封部件的内部热传导，然后从半导体装置100表面上热传导至大气中。
在现有的半导体装置10、20、30中，在从半导体元件3上产生的热量的散热路径中，插入有热传导率低的密封部件5，因此热量无法向密封部件5的内部充分地扩散；此外，在半导体装置的上部搭载有散热部件7、31的半导体装置20、30中，半导体元件3上所产生的热量受到达散热部件7、31的散热面积所限，无法获得充分的散热效果。但是，在本发明的半导体装置100中，通过在密封部件105的内部将面积比半导体元件103的发热面的面积大的散热部件107配置于半导体元件103附近，利用散热部件107使半导体元件103所产生的热量在半导体元件103上的密封部件105的内部有效地扩散、也就是扩大散热面积，从而可以提高半导体装置100的散热特性。
这样，根据本发明，通过在半导体元件103上搭载比半导体元件103大且热传导率高的散热部件107，使半导体元件103所产生的热量传导至半导体元件103上的密封部件105，同时特别地，通过使热量在密封部件105的内部的横向上有效地扩散，可以扩大从半导体元件103至密封部件105的表面的散热面积、即扩大散热路径。因此，与图2或图3所示的现有的半导体装置中所看到的那样在密封部件5上露出散热部件7、31的半导体装置20、30相比，本发明的半导体装置100可以降低半导体装置的热阻θja。
(实施例)
根据图14至图16所示的热分析结果，将本发明的实施例的半导体装置的散热特性与具有散热部件的现有的半导体装置进行比较说明。
图14是表示在图4所示的本发明的半导体装置的结构中，散热部件107的一边的长度变为10[mm]、20[mm]、27.7[mm]，或散热部件107的厚度t变为0.3[mm]、0.5[mm]、0.7[mm]，并利用热流体分析软件对基于JEDEC(电子器件工程联合委员会)标准的半导体装置热阻θja[degC/W]进行分析的结果的图。
在图14中，在作为分析对象的本实施例和现有的半导体装置中，半导体装置的一边的长度都为31[mm]，半导体元件的一边的长度都为8[mm]，并都使用由铜构成且具有图8所示的正方形形状的散热部件进行分析。另外，图14所示的各个图表的数值如图17所示。其中，图14所示的现有例的数值表示了在散热部件的厚度为0.3[mm]、散热部件的一边的长度为27.7[mm]、且密封部件105的热传导率为3.1[W/mK]的情况下的热阻θja9.3[degC/W]。
在图14中，从使用一边的长度为约27.7[mm]的散热部件的情况可知，与现有结构的半导体装置相比，本发明实施例的θja降低了约14％。另外，在现有的半导体装置中使用一边的长度为约27.7[mm]的散热部件时的θja与本发明的实施例中使用一边的长度为约15[mm]的散热部件时的θja在数值上相等，表明本发明的实施例即使使用比现有的半导体装置更小的散热部件，也可以获得与现有相比同等的散热效果。
接着，图15是表示在图4所示的本发明的半导体装置结构中，将散热部件107的一边长度改变为10[mm]、16[mm]、20[mm]、27.7[mm]，或将散热部件107的厚度t改变为0.3[mm]、0.5[mm]、0.7[mm]，并利用热流体分析软件对基于JEDEC标准的半导体装置热阻θjc[degC/W]进行分析的结果的图。
在图15中，在作为分析对象的本实施例和现有的半导体装置中，半导体装置的一边的长度都为31[mm]，半导体元件的一边的长度都为8[mm]，并都使用由铜构成且具有如图8所示的正方形形状的散热部件进行分析。图15所示的各个图表的数值见图18。其中，图15所示的现有例的数值表示了在散热部件的厚度为0.3[mm]、散热部件的一边的长度为27.7[mm]、且密封部件105的热传导率为3.1[W/mK]的情况下的热阻θjc(1.74[degC/W])。
根据图15所示的θjc的分析结果，与现有结构的θjc相比，在将与一边的长度为约27.7[mm]的散热部件具有相同尺寸的散热部件用于本发明的半导体装置的情况下的θjc降低了约42％。由此可见，本发明的实施例的半导体装置在使用与现有同等大小的散热部件时，与现有的半导体装置相比，可以大幅地降低热阻。
另外，图16是表示在图4所示的本发明的半导体装置的结构中，将由树脂构成的密封部件105的热传导率改变为0.6[W/mK]、1.0[W/mK]、3.1[W/mK]，或者将散热部件107的厚度t改变为0.3[mm]、0.5[mm]、0.7[mm]，并满足在现有的半导体装置中使用一边的长度为27.7[mm]的散热部件的情况下的θja的散热部件的面积比的图。
在图16中，在作为分析对象的本实施例的半导体装置中，半导体装置的一边的长度为31[mm]，半导体元件的一边的长度为8[mm]，并使用由铜合金构成且具有图8所示的正方形形状的散热部件进行分析。另外，图16所示的各个图表的数值见图19。图16中右上方区域记载的数学式y≥224.0x-0.5是表示本发明的实施例中的散热部件厚度y[mm]与散热部件相对于半导体元件的面积比x的关系的数学式。所述数学式表示了图16中用斜线表示的区域。与现有的半导体装置相比，满足所述数学式的xy数值的半导体装置具有更加优良的热阻降低效果。其中，图16的分析结果仅是表示本实施例的半导体装置较现有的半导体装置显示出更为优良的热阻降低效果的一例而已。例如，在以与图16中作为分析对象的本实施例的半导体装置相比、半导体装置的一边的长度较短的半导体装置为对象进行同样的分析的情况下，或者在使用了与图16中作为分析对象的本实施例的半导体装置相比热传导率更高的密封部件的半导体装置为对象进行同样的分析的情况下，即使在与图16中用斜线表示的区域相比散热部件的厚度小、散热部件的面积小的情况下，仍可获得与现有的半导体装置同等的散热效果。
这样，根据本发明的实施方式1，即使在使用与现有的半导体装置相同物性的散热部件的情况下，也可以利用比现有的半导体装置的面积更小的散热部件来获得与现有相同的散热效果。另外，由于本发明的半导体装置的整个表面被密封部件105覆盖，因此与现有那种在半导体装置的表面上露出由金属等构成的散热部件的结构相比，可以提高热量从半导体装置的表面释放的辐射率和标识的辨识性，并可以降低半导体装置的外观不良的发生。
(实施方式2)
参照附图说明本发明的实施方式2的半导体装置200。本发明的实施方式2说明了在所述实施方式1的半导体装置100中，在散热部件107和半导体元件103之间配置间隔件201的例子。
图5是表示实施方式2的半导体装置200的示意性结构的截面图。另外，实施方式2的半导体装置200的特征是，散热部件107被配置为在与半导体元件103之间夹着间隔件201，其它结构与实施方式1中说明的结构相同，因此省略对与其它结构、半导体装置200的制造方法或实施方式2的半导体装置200的散热特性等有关的图示和说明。
如图5所示，实施方式2的半导体装置200的特征是，散热部件107被配置为在与半导体元件103之间夹着间隔件201。如图5所示，在与实施方式1的半导体装置100相同的半导体装置结构内的半导体元件103上，为了确保键合引线104的高度，可以搭载间隔件201。间隔件201的材料可以使用例如硅等。图5表示在半导体元件103与散热部件107之间通过粘结剂102A、102C搭载了间隔件201的例子，在散热部件107与间隔件201之间进行固定的粘结剂102A与在半导体元件103与基板101之间进行固定的粘结剂102B可以是相同的，也可以是由不同材料制成的粘结剂。
再者，本发明的实施方式2的间隔件201的形状并不限于如图5所示形状的间隔件201。间隔件201的形状只要能够保持连接半导体元件103与基板101的键合引线104的高度即可，也可以为其它形状。其它结构和制造方法与实施方式1相同。根据本发明的实施方式2，可以获得本发明的散热部件107的优良的散热特性而保持连接半导体元件103与基板101的键合引线104的高度不变。
(实施方式3)
参照附图说明本发明的实施方式3的半导体装置。本发明的实施方式3说明了在所述实施方式1的半导体装置100中，在散热部件107与半导体元件103之间进一步配置半导体元件203的结构例。
图6是表示实施方式3的半导体装置300的示意性结构的图。另外，实施方式3的半导体装置300的特征是，在散热部件107与半导体元件103之间进一步配置半导体元件203，其它结构与实施方式1中说明的结构相同，因此省略了对与其它结构、半导体装置300的制造方法或实施方式3的半导体装置300的散热特性等有关的图示和说明。
如图6所示，实施方式3的半导体装置300的特征是，在散热部件107与半导体元件103之间进一步配置半导体元件203。在本发明的半导体装置中配置的半导体元件并不限于一个，可以层叠地配置多个半导体元件。图6表示叠片式安装了半导体元件203的本发明实施方式3的截面结构。利用焊料凸块等连接端子301将层叠的两个半导体元件103和203电连接，所述连接端子之间用被称为底部填充剂的树脂202密封。上段的半导体元件203与实施方式1同样地通过粘结剂102A与散热部件107相连接，并进一步将散热部件107的整体掩埋在密封部件105的内部而密封。
在图6中，表示了将上段的半导体元件203以叠片式安装在下段的半导体元件103上的例子，但本发明实施方式3的半导体装置的层叠结构并不限于该例子。其它结构和制造方法与实施方式1相同。
根据本发明的实施方式3，可以获得搭载了多个半导体元件的高性能的半导体装置，这种半导体装置是具有本发明的散热部件107的优良的散热特性的半导体装置。
(实施方式4)
参照附图说明本发明的实施方式4的半导体装置400。本发明的实施方式4说明了在所述实施方式1的半导体装置100中，改变了散热部件的结构的例子。
图7(A)、(B)是表示实施方式4的半导体装置400的示意性结构的图。另外，实施方式4的半导体装置400的特征是，散热部件107由多个部件构成，其它结构与实施方式1中说明的结构相同，因此省略对与其它结构、半导体装置400的制造方法或实施方式4的半导体装置400的散热特性等有关的图示和说明。
如图7(A)、(B)所示，实施方式4的半导体装置400、500的特征是，散热部件由多个部件407A～407D或507A～507D构成。在本发明的半导体装置中，散热部件可以不是由一个、而是由多个部件构成。图7(A)、(B)表示搭载了多个散热部件的本发明半导体装置的截面结构。多个部件407A～407D或507A～507D通过粘结剂或热界面材料(TIM)等401A～401C相互连接，并且散热部件的整体被掩埋在密封部件105内部而密封。
实施方式4中由多个部件构成的散热部件可以如图7(A)所示那样以在散热部件的侧面具有凹凸的方式进行层叠。另外，由多个部件构成的散热部件107也可以如图7(B)所示那样以散热部件的侧面为平坦状的方式进行层叠。其它的结构和制造方法与实施方式1相同。
根据本发明的实施方式4，通过层叠多个部件407A～407D或507A～507D而制造具有所需厚度的散热部件，可以获得具有与实施方式1相同效果的半导体装置。另外，如图7(A)所示，以使散热部件的侧面具有凹凸的方式使多个部件从中心位置错开来层叠，据此可以增加散热部件107与密封部件105的粘结面积、提高散热部件107与密封部件105的密接性。
(实施方式5)
参照附图说明本发明的实施方式5的半导体装置。本发明的实施方式5说明了在所述实施方式1的半导体装置100中，改变了散热部件107的外部形状的例子。
图8至图13是表示在实施方式5的半导体装置中配置的散热部件107的外部形状的例子的图。另外，实施方式5的半导体装置的特征是，散热部件107的配置在半导体元件103上的表面是非平坦的，其它结构与实施方式1所说明的结构相同，因此省略对与其它结构、半导体装置的制造方法或实施方式5半导体装置的散热特性等有关的图示和说明。
在实施方式5的配置在半导体装置上的散热部件的外部平面形状可以是如图8所示的正方形的散热部件700，可以是如图9所示的圆形的散热部件800，也可以是如图10所示的多边形的散热部件900。图10所示的是具有正六边形形状的散热部件900，但实施方式5所配置的多边形的散热部件的形状并不限于此，可以为其它的多边形的形状。
再者，在实施方式5的半导体装置中配置的散热部件的外部形状可以是如图11截面图所示的散热部件1000那样，在散热部件的配置于半导体元件103上的表面上具有凹凸1001，可以具有多个小的圆形的或多角形的凹坑(凹痕)；或者可以是如图12截面图所示的散热部件1100那样，在散热部件的配置于半导体元件103上的表面上具有狭缝1101(切口)；或者可以是如图13的俯视图所示的散热部件1200那样，在散热部件的配置于半导体元件103上的表面上具有孔1201。再者，散热部件的配置于半导体元件103上的表面上的凹凸1001、狭缝1101或孔1201可以形成为一个或多个。其它结构和制造方法与实施方式1相同。
根据本发明的实施方式5，通过使散热部件的配置于半导体元件103上的表面成为非平坦状，可以提高散热部件的非平坦面与粘结剂102A的密接性，可以获得提高了半导体元件103与散热部件的粘结性的半导体装置。
另外，上述实施方式1～5所示的散热部件也可以由硅构成。通过使用具有优良的热传导率的硅作为散热部件107的材料，可以获得具有本发明的散热部件的优良散热特性的半导体装置。
(实施方式6)
参照附图说明本发明的实施方式6的半导体装置。本发明的实施方式6说明了所述实施方式1的半导体装置100中，并排地配置多个半导体元件103的例子。另外，实施方式6的半导体装置600的特征是，将多个半导体元件103并排地配置在同一个基板101上，其它结构与实施方式1说明的结构相同，因此省略对与其他结构、半导体装置600的制造方法或实施方式6半导体装置600的散热特性等有关的图示和说明。
图20(A)和图20(B)是表示实施方式6的半导体装置600的示意性结构的图。图20(A)是表示半导体装置600的示意性结构的俯视图，图20(B)是从图20(A)所示的B-B′线观察半导体装置600的截面图。在图20(A)和图20(B)中，半导体装置600具备：基板101；通过粘结剂102B并排地配置在基板101上的多个半导体元件103；通过粘结剂102A配置在半导体元件103上的散热部件107；以及覆盖基板101的上部、半导体元件103和散热部件107的密封部件105。在图20中，图示的是配置有两个半导体元件103的例子，但并排地配置的半导体元件103的数量可以是两个以上。
根据本发明的实施方式6，即使在并排地配置有多个半导体元件103的半导体装置600中，通过在多个半导体元件103上搭载比各个半导体元件103大且热传导率高的一个散热部件107，将各个半导体元件103所产生的热量传导至各个半导体元件103上的密封部件105，同时特别是通过使热量在密封部件105的内部的横向上有效地扩散，可以扩大从各个半导体元件103到密封部件105表面的散热面积、即扩大散热路径。
本发明的一个实施方式的半导体装置可以具备：基板；配置在基板上的半导体元件；配置在半导体元件上的散热部件；以及覆盖基板的上部、半导体元件和散热部件的密封部件，其中散热部件的配置在半导体元件上的表面的表面积比半导体元件的配置有散热部件的表面的表面积大。
另外，在本发明的一个实施方式的半导体装置中，散热部件可以是硅。
另外，在本发明的一个实施方式的半导体装置中，散热部件可以由一个部件或者可以由层叠的多个部件构成。
另外，在本发明的一个实施方式的半导体装置中，散热部件的侧面形状可以是凹凸状的。
另外，在本发明的一个实施方式的半导体装置中，散热部件的侧面形状可以是平坦状的。
另外，在本发明的一个实施方式的半导体装置中，散热部件的配置在半导体元件上的表面的表面积相对于半导体元件的配置有散热部件的表面的表面积的表面积比x与散热部件的厚度y的关系可以是y≥224.0x-0.5。
另外，在本发明的一个实施方式的半导体装置中，散热部件可以通过粘结剂而固定在半导体元件上。
另外，在本发明的一个实施方式的半导体装置中，散热部件可以通过粘结剂而固定在层叠于半导体元件上的半导体元件上。
另外，在本发明的一个实施方式的半导体装置中，散热部件可以通过粘结剂而固定在层叠于半导体元件上的间隔件上。
另外，在本发明的一个实施方式的半导体装置中，粘结剂可以是导热脂。
另外，在本发明的一个实施方式的半导体装置中，粘结剂可以是热界面材料。
另外，在本发明的一个实施方式的半导体装置中，粘结剂可以是导热胶。
另外，在本发明的一个实施方式的半导体装置中，散热部件的配置在半导体元件上的表面可以是非平坦的。
另外，在本发明的一个实施方式的半导体装置中，散热部件的配置在半导体元件上的表面可以具有凹凸。
另外，在本发明的一个实施方式的半导体装置中，散热部件的配置在半导体元件上的表面可以具有狭缝。
另外，在本发明的一个实施方式的半导体装置中，散热部件的配置在半导体元件上的表面可以具有孔。

Claims (9)

1.一种半导体装置，具备：
基板；
配置在所述基板上的半导体元件；
配置在所述半导体元件上的散热部件；以及
覆盖所述基板的上部、所述半导体元件和所述散热部件的密封部件，
所述散热部件掩埋在所述密封部件内部，
其中，所述散热部件的配置在所述半导体元件上的表面的表面积比所述半导体元件的配置有所述散热部件的表面的表面积大。
2.如权利要求1所述的半导体装置，其特征在于，所述散热部件包括一个部件或层叠的多个部件。
3.如权利要求1所述的半导体装置，其特征在于，所述散热部件通过粘结剂固定在所述半导体元件上。
4.如权利要求1所述的半导体装置，其特征在于，所述散热部件通过粘结剂固定在层叠于所述半导体元件上的半导体元件上。
5.如权利要求1所述的半导体装置，其特征在于，所述散热部件通过粘结剂固定在层叠于所述半导体元件上的间隔件上。
6.如权利要求3至5的任一项所述的半导体装置，其特征在于，所述粘结剂是导热脂、热界面材料或导热胶。
7.如权利要求1至5的任一项所述的半导体装置，其特征在于，所述散热部件的配置在所述半导体元件上的表面是非平坦的。
8.如权利要求7所述的半导体装置，其特征在于，在所述散热部件的配置在所述半导体元件上的表面具有凹凸。
9.如权利要求7所述的半导体装置，其特征在于，在所述散热部件的配置在所述半导体元件上的表面具有狭缝或孔。
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