TWI511922B - 單層石墨氧化物的脫氧作用 - Google Patents
單層石墨氧化物的脫氧作用 Download PDFInfo
- Publication number
- TWI511922B TWI511922B TW099101811A TW99101811A TWI511922B TW I511922 B TWI511922 B TW I511922B TW 099101811 A TW099101811 A TW 099101811A TW 99101811 A TW99101811 A TW 99101811A TW I511922 B TWI511922 B TW I511922B
- Authority
- TW
- Taiwan
- Prior art keywords
- target
- single layer
- light
- graphite
- graphite oxide
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 90
- 238000006392 deoxygenation reaction Methods 0.000 title claims description 30
- 229910021389 graphene Inorganic materials 0.000 title 1
- 229910002804 graphite Inorganic materials 0.000 claims description 79
- 239000010439 graphite Substances 0.000 claims description 79
- 239000002356 single layer Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 25
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 239000006185 dispersion Substances 0.000 claims description 16
- 239000003054 catalyst Substances 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 4
- 238000004108 freeze drying Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000002000 scavenging effect Effects 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000006260 foam Substances 0.000 description 30
- 239000000446 fuel Substances 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 18
- 238000006722 reduction reaction Methods 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000002485 combustion reaction Methods 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 238000004200 deflagration Methods 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000005474 detonation Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000003502 gasoline Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 235000015842 Hesperis Nutrition 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002816 fuel additive Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical compound C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 1
- 238000010895 photoacoustic effect Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000003380 propellant Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000002760 rocket fuel Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 231100000925 very toxic Toxicity 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/19—Preparation by exfoliation
- C01B32/192—Preparation by exfoliation starting from graphitic oxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/04—Specific amount of layers or specific thickness
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/22—Electronic properties
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/30—Purity
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/32—Size or surface area
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/386,303 US8317984B2 (en) | 2009-04-16 | 2009-04-16 | Graphene oxide deoxygenation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201038474A TW201038474A (en) | 2010-11-01 |
| TWI511922B true TWI511922B (zh) | 2015-12-11 |
Family
ID=42751173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099101811A TWI511922B (zh) | 2009-04-16 | 2010-01-22 | 單層石墨氧化物的脫氧作用 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8317984B2 (enExample) |
| JP (1) | JP5555035B2 (enExample) |
| KR (1) | KR101724697B1 (enExample) |
| DE (1) | DE102010002124B4 (enExample) |
| TW (1) | TWI511922B (enExample) |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8968525B2 (en) * | 2009-02-27 | 2015-03-03 | Northwestern University | Methods of flash reduction and patterning of graphite oxide and its polymer composites |
| US9162896B2 (en) * | 2009-05-31 | 2015-10-20 | College Of William And Mary | Method for making polymer composites containing graphene sheets |
| JP2013500922A (ja) | 2009-07-31 | 2013-01-10 | マサチューセッツ インスティテュート オブ テクノロジー | 炭素系ナノ構造の形成に関するシステムおよび方法 |
| EP2504278A2 (en) * | 2009-11-25 | 2012-10-03 | Massachusetts Institute of Technology | Systems and methods for enhancing growth of carbon-based nanostructures |
| US9768355B2 (en) * | 2009-12-10 | 2017-09-19 | Virginia Commonwealth University | Production of graphene and nanoparticle catalysts supported on graphene using laser radiation |
| KR101180176B1 (ko) | 2010-10-26 | 2012-09-05 | 주식회사 엘지실트론 | 화합물 반도체 장치 및 그 제조 방법 |
| US9663368B2 (en) | 2010-10-28 | 2017-05-30 | Massachusetts Institute Of Technology | Carbon-based nanostructure formation using large scale active growth structures |
| WO2012057702A1 (en) * | 2010-10-28 | 2012-05-03 | Nanyang Technological University | Method of preparing a porous graphene film |
| KR102650871B1 (ko) | 2011-06-03 | 2024-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전극을 제조하기 위한 방법 |
| US9218916B2 (en) | 2011-06-24 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Graphene, power storage device, and electric device |
| US9249524B2 (en) | 2011-08-31 | 2016-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of composite oxide and manufacturing method of power storage device |
| US8828193B2 (en) | 2011-09-06 | 2014-09-09 | Indian Institute Of Technology Madras | Production of graphene using electromagnetic radiation |
| KR102514830B1 (ko) | 2011-09-30 | 2023-03-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 양극, 리튬 이차 전지, 전기 자동차, 하이브리드 자동차, 이동체, 시스템, 및 전기 기기 |
| CN103035922B (zh) | 2011-10-07 | 2019-02-19 | 株式会社半导体能源研究所 | 蓄电装置 |
| US9487880B2 (en) | 2011-11-25 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Flexible substrate processing apparatus |
| CN102615290B (zh) * | 2011-12-12 | 2016-04-06 | 湖南理工学院 | 一种Ag/石墨烯纳米复合材料的制备方法 |
| JP6016597B2 (ja) | 2011-12-16 | 2016-10-26 | 株式会社半導体エネルギー研究所 | リチウムイオン二次電池用正極の製造方法 |
| US20160077074A1 (en) * | 2011-12-21 | 2016-03-17 | The Regents Of The University Of California | Interconnected corrugated carbon-based network |
| US20140239236A1 (en) * | 2012-01-18 | 2014-08-28 | Deepak Shukla | Method for reducing graphite oxide |
| US20130180842A1 (en) * | 2012-01-18 | 2013-07-18 | Thomas Nelson Blanton | Method for reducing graphite oxide |
| JP5806618B2 (ja) * | 2012-01-26 | 2015-11-10 | Ｄｏｗａエレクトロニクス株式会社 | 酸化グラフェンの還元方法およびその方法を利用した電極材料の製造方法 |
| JP5719859B2 (ja) | 2012-02-29 | 2015-05-20 | 株式会社半導体エネルギー研究所 | 蓄電装置 |
| CN109524246B (zh) | 2012-03-05 | 2021-07-27 | 加州大学评议会 | 具有由互连波纹状碳基网络制成的电极的电容器 |
| US9059466B2 (en) | 2012-03-22 | 2015-06-16 | Chun-Chieh Chang | Direct synthesis of lithium ion battery electrode materials using graphene treated raw materials as the reactant |
| US9090476B2 (en) | 2012-03-22 | 2015-07-28 | Chun-Chieh Chang | Direct deposition of graphene on substrate material |
| US9422165B2 (en) * | 2012-04-27 | 2016-08-23 | Empire Technology Development Llc | Graphene compositions and methods of making the same |
| US9527043B2 (en) | 2012-05-17 | 2016-12-27 | Samsung Electronics Co., Ltd. | Gas separation membrane and method of preparing the same |
| KR101920716B1 (ko) | 2012-05-17 | 2019-02-13 | 삼성전자주식회사 | 기체 분리막 및 그 제조방법 |
| US9236633B2 (en) | 2012-06-12 | 2016-01-12 | Uwm Research Foundation, Inc. | Synthesis and applications of graphene based nanomaterials |
| US9225003B2 (en) | 2012-06-15 | 2015-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing storage battery electrode, storage battery electrode, storage battery, and electronic device |
| US20140050910A1 (en) * | 2012-08-15 | 2014-02-20 | Rensselaer Polytechnic Institute | Rapid macro-scale synthesis of free-standing graphene, high performance, binder-free graphene anode material, and methods of synthesizing the anode material |
| JP6159228B2 (ja) | 2012-11-07 | 2017-07-05 | 株式会社半導体エネルギー研究所 | 非水系二次電池用正極の製造方法 |
| CN102963886A (zh) * | 2012-11-28 | 2013-03-13 | 同济大学 | 一种多孔状氧化石墨烯的制备方法 |
| JP6074270B2 (ja) * | 2013-01-15 | 2017-02-01 | 東京エレクトロン株式会社 | グラフェンのパターニング方法、及びパターンニング用部材 |
| US9284195B2 (en) * | 2013-01-30 | 2016-03-15 | Research & Business Foundation Sungkyunkwan University | Aggregated graphene oxide and preparing method thereof, aggregated graphene and preparing method thereof, and aggregated and nitrogen-doped graphene and preparing method thereof |
| KR20140100619A (ko) * | 2013-02-05 | 2014-08-18 | 도시바삼성스토리지테크놀러지코리아 주식회사 | 복수의 광원을 사용한 그래핀 제조장치 |
| KR20140100146A (ko) * | 2013-02-05 | 2014-08-14 | 도시바삼성스토리지테크놀러지코리아 주식회사 | 복수의 광원을 사용한 그래핀 제조방법 |
| US9673454B2 (en) | 2013-02-18 | 2017-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Sodium-ion secondary battery |
| JP6373284B2 (ja) | 2013-02-28 | 2018-08-15 | エヌ１２ テクノロジーズ， インク．Ｎ１２ Ｔｅｃｈｎｏｌｏｇｉｅｓ， Ｉｎｃ． | ナノ構造フィルムのカートリッジベース払い出し |
| KR101447680B1 (ko) * | 2013-03-08 | 2014-10-08 | 한국과학기술연구원 | 전극의 제조 방법, 상기 제조 방법에 따라 제조된 전극, 상기 전극을 포함하는 슈퍼 커패시터 및 리튬 이차 전지 |
| KR20140115198A (ko) * | 2013-03-20 | 2014-09-30 | 한국과학기술연구원 | 산화그래핀의 환원 방법, 상기 방법으로 얻어진 환원 산화그래핀 및 상기 환원 산화그래핀을 포함하는 박막 트랜지스터 |
| US9490472B2 (en) * | 2013-03-28 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing electrode for storage battery |
| JP6214028B2 (ja) * | 2013-04-05 | 2017-10-18 | 国立大学法人北海道大学 | 酸化グラフェン含有液の製造方法及びその利用 |
| CN104211047B (zh) * | 2013-05-30 | 2017-02-08 | 纳米新能源（唐山）有限责任公司 | 石墨烯、石墨烯电极、石墨烯超级电容器及其制备方法 |
| US9908780B2 (en) | 2013-10-31 | 2018-03-06 | East China University Of Science And Technology | Methods and systems for preparing graphene |
| JP2016013958A (ja) | 2013-12-02 | 2016-01-28 | 株式会社半導体エネルギー研究所 | 素子、膜の作製方法 |
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| US20100266964A1 (en) | 2010-10-21 |
| DE102010002124A1 (de) | 2010-10-21 |
| KR101724697B1 (ko) | 2017-04-07 |
| JP5555035B2 (ja) | 2014-07-23 |
| TW201038474A (en) | 2010-11-01 |
| US8317984B2 (en) | 2012-11-27 |
| JP2010248066A (ja) | 2010-11-04 |
| KR20100114827A (ko) | 2010-10-26 |
| DE102010002124B4 (de) | 2021-10-21 |
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