JP2010248066A - グラフェン酸化物の脱酸素 - Google Patents
グラフェン酸化物の脱酸素 Download PDFInfo
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- JP2010248066A JP2010248066A JP2010091959A JP2010091959A JP2010248066A JP 2010248066 A JP2010248066 A JP 2010248066A JP 2010091959 A JP2010091959 A JP 2010091959A JP 2010091959 A JP2010091959 A JP 2010091959A JP 2010248066 A JP2010248066 A JP 2010248066A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 82
- 238000006392 deoxygenation reaction Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000001301 oxygen Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000003054 catalyst Substances 0.000 claims abstract description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 6
- 239000011777 magnesium Substances 0.000 claims abstract description 6
- 239000010949 copper Substances 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000006185 dispersion Substances 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 230000003197 catalytic effect Effects 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 230000002000 scavenging effect Effects 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011261 inert gas Substances 0.000 abstract description 3
- -1 high temperature Substances 0.000 abstract description 2
- 239000006260 foam Substances 0.000 description 28
- 239000000446 fuel Substances 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000011010 flushing procedure Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 238000006722 reduction reaction Methods 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 238000002485 combustion reaction Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000004200 deflagration Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- 239000002109 single walled nanotube Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
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- 238000004108 freeze drying Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
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- 239000002086 nanomaterial Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 235000015842 Hesperis Nutrition 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005474 detonation Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000006261 foam material Substances 0.000 description 1
- 239000002816 fuel additive Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical compound C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 1
- 238000010895 photoacoustic effect Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000003380 propellant Substances 0.000 description 1
- 239000002760 rocket fuel Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/19—Preparation by exfoliation
- C01B32/192—Preparation by exfoliation starting from graphitic oxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/04—Specific amount of layers or specific thickness
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/22—Electronic properties
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/30—Purity
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/32—Size or surface area
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
【解決手段】グラフェン酸化物(GO)標的物を、GO標的物の脱酸素反応を開始させるのに足る出力を有する光に暴露し、光熱分解する。GO標的物の脱酸素反応中に酸素を捕捉する触媒が、ニッケル、銅、ケイ素およびマグネシウムの1種または複数である触媒を用いて、GO標的物を、200ナノメートル〜400ナノメートルの波長を有するグラフェン酸化物の薄膜をパターニングするように配置されたリソグラフィー光源からの光に暴露して、GO標的物の脱酸素反応中に酸素を捕捉する。
【選択図】なし
Description
図1を参照すると、一例において装置100は、光源102およびグラフェン酸化物(GO)標的物104を含む。グラフェン酸化物(GO)は、色が濃く水分散性であるグラフェンの酸化形であり、黒鉛粉末を強力な酸化剤で処理することにより得られる。光源102は、GO標的物104を光に暴露するように、例えば、GO標的物104に向けて光パルス106を放出するように、配置する。光源102の例は、レーザー、フラッシュバルブもしくはフラッシュランプ、アークランプ、エレクトロルミネッセンスランプ(例えば発光ダイオード)、ガス放電もしくは電気グロー放電ランプ(例えば、キセノンフラッシュランプ、ネオンおよびアルゴンランプ)、高輝度放電(HID)ランプ(例えば、キセノンアークランプ、水銀ランプ、メタルハライドランプ)、他の光源、またはこれらの組合せを含む。
102 光源
104 グラフェン酸化物(GO)標的物
106 光パルス
200 プロセスフロー
202 グラフェン酸化物分散体を形成する段階
204 多孔質グラフェン酸化物構造物を形成する段階
206 グラフェン酸化物の薄膜を形成する段階
208 グラフェン酸化物標的物を光に暴露する段階
800 装置
802 燃料源
Claims (20)
- 段階:
グラフェン酸化物(GO)標的物を、GO標的物の脱酸素反応を開始させるのに足る出力を有する光に暴露する段階、ここにおいて、GO標的物の脱酸素反応はGO標的物をグラフェンに変換する、
を含む方法。 - さらに、段階:
GO標的物を多孔質GO構造物として調製する段階、ここにおいて、該多孔質GO構造物は、多孔質GO構造物の脱酸素反応の伝播に十分な表面積を含む、
を含む、請求項1に記載の方法。 - 調製段階が、段階:
グラフェン酸化物の分散体を乾燥して多孔質GO構造物を形成する段階、
を含む、請求項2に記載の方法。 - 乾燥段階が、段階:
グラフェン酸化物の分散体を凍結乾燥して多孔質GO構造物を形成する段階、
を含む、請求項3に記載の方法。 - さらに、段階:
1ミリリットルあたりグラフェン酸化物、およそ、5ミリグラム〜15ミリグラムのグラフェン酸化物密度を有するグラフェン酸化物の分散体を形成する段階、
を含む、請求項3に記載の方法。 - GO標的物の脱酸素反応がGO標的物の光熱分解である、請求項1に記載の方法。
- さらに、段階:
GO標的物を、GO標的物の脱酸素反応中に酸素を捕捉する酸素捕捉触媒と混合する段階、
を含む、請求項1に記載の方法。 - 酸素捕捉触媒が、ニッケル、銅、ケイ素およびマグネシウムの1種または複数を含む、請求項7に記載の方法。
- さらに、段階:
GO標的物を薄膜として形成する段階、
を含む、請求項1に記載の方法。 - GO標的物を薄膜として形成する段階が、段階:
GO標的物を、およそ、1ナノメートル〜20ミクロンの厚さを有する薄膜として形成する段階、
を含む、請求項9に記載の方法。 - GO標的物を光に暴露する段階が、段階:
薄膜を光に暴露して、所望のパターンでグラフェンを形成する段階、
を含む、請求項9に記載の方法。 - 薄膜を暴露する段階が、段階:
薄膜をフォトリソグラフィー光源からの光に暴露して、所望のパターンでグラフェンを形成する段階、
を含む、請求項11に記載の方法。 - さらに、段階:
GO標的物を薄膜として触媒金属基材上に形成する段階、ここにおいて、該触媒金属基材は、GO標的物の脱酸素反応中に酸素を捕捉する、
を含む、請求項12に記載の方法。 - GO標的物を光に暴露する段階が、段階:
GO標的物を、200ナノメートル〜400ナノメートルの波長を有する光に暴露する段階、
を含む、請求項1に記載の方法。 - 以下を含む装置:
グラフェン酸化物(GO)標的物;
GO標的物から遠く離れて位置決めされた光源;
であって、該光源が、GO標的物において脱酸素反応を開始させるのに足る出力を有する光パルスをGO標的物に向けて放出するように配置されている、前記装置。 - GO標的物がグラフェン酸化物の多孔質構造物を含む、請求項15に記載の装置。
- グラフェン酸化物の多孔質構造物が、グラフェン酸化物の凍結乾燥した構造物を含む、請求項16に記載の装置。
- GO標的物がグラフェン酸化物の薄膜を含む、請求項15に記載の装置。
- 請求項18に記載の装置であって、
光源が、グラフェン酸化物の薄膜をパターニングするように配置されたリソグラフィー光源を含み;
薄膜が、GO標的物の脱酸素反応中に酸素を捕捉する触媒金属基材上に形成されている、
前記装置。 - 光源がレーザーを含む、請求項15に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/386,303 US8317984B2 (en) | 2009-04-16 | 2009-04-16 | Graphene oxide deoxygenation |
US12/386,303 | 2009-04-16 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010248066A true JP2010248066A (ja) | 2010-11-04 |
JP2010248066A5 JP2010248066A5 (ja) | 2013-03-21 |
JP5555035B2 JP5555035B2 (ja) | 2014-07-23 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010091959A Active JP5555035B2 (ja) | 2009-04-16 | 2010-04-13 | グラフェン酸化物の脱酸素 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8317984B2 (ja) |
JP (1) | JP5555035B2 (ja) |
KR (1) | KR101724697B1 (ja) |
DE (1) | DE102010002124B4 (ja) |
TW (1) | TWI511922B (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013151398A (ja) * | 2012-01-26 | 2013-08-08 | Dowa Electronics Materials Co Ltd | 酸化グラフェンの還元方法およびその方法を利用した電極材料の製造方法 |
JP2013163636A (ja) * | 2011-09-30 | 2013-08-22 | Semiconductor Energy Lab Co Ltd | グラフェン、電極、及び蓄電装置 |
JP2014136657A (ja) * | 2013-01-15 | 2014-07-28 | Tokyo Electron Ltd | グラフェンのパターニング方法、及びパターンニング用部材 |
JP2014201492A (ja) * | 2013-04-05 | 2014-10-27 | 国立大学法人北海道大学 | 酸化グラフェン含有液の製造方法及びその利用 |
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US8317984B2 (en) | 2012-11-27 |
JP5555035B2 (ja) | 2014-07-23 |
US20100266964A1 (en) | 2010-10-21 |
DE102010002124B4 (de) | 2021-10-21 |
KR20100114827A (ko) | 2010-10-26 |
TWI511922B (zh) | 2015-12-11 |
TW201038474A (en) | 2010-11-01 |
DE102010002124A1 (de) | 2010-10-21 |
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