TWI494426B - 藉使用溶劑及系統之基材乾燥方法 - Google Patents

藉使用溶劑及系統之基材乾燥方法 Download PDF

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Publication number
TWI494426B
TWI494426B TW097100227A TW97100227A TWI494426B TW I494426 B TWI494426 B TW I494426B TW 097100227 A TW097100227 A TW 097100227A TW 97100227 A TW97100227 A TW 97100227A TW I494426 B TWI494426 B TW I494426B
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TW
Taiwan
Prior art keywords
group
solvent
wafer
alkyl
ester
Prior art date
Application number
TW097100227A
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English (en)
Chinese (zh)
Other versions
TW200840866A (en
Inventor
韋恩 奎林 麥可
帕瑪 荷布魯克 羅迪
克里昂 摩爾 約翰
Original Assignee
伊士曼化學公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 伊士曼化學公司 filed Critical 伊士曼化學公司
Publication of TW200840866A publication Critical patent/TW200840866A/zh
Application granted granted Critical
Publication of TWI494426B publication Critical patent/TWI494426B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2006—Monohydric alcohols
    • C11D3/2017—Monohydric alcohols branched
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2093—Esters; Carbonates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/266—Esters or carbonates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
TW097100227A 2007-01-04 2008-01-03 藉使用溶劑及系統之基材乾燥方法 TWI494426B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/649,600 US8021490B2 (en) 2007-01-04 2007-01-04 Substrate cleaning processes through the use of solvents and systems

Publications (2)

Publication Number Publication Date
TW200840866A TW200840866A (en) 2008-10-16
TWI494426B true TWI494426B (zh) 2015-08-01

Family

ID=39262665

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097100227A TWI494426B (zh) 2007-01-04 2008-01-03 藉使用溶劑及系統之基材乾燥方法

Country Status (7)

Country Link
US (1) US8021490B2 (https=)
EP (1) EP2106616A2 (https=)
JP (1) JP2010516044A (https=)
KR (1) KR20090106499A (https=)
CN (1) CN101573777A (https=)
TW (1) TWI494426B (https=)
WO (1) WO2008085390A2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8021490B2 (en) * 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems
JP4922329B2 (ja) * 2009-03-25 2012-04-25 株式会社東芝 半導体基板の洗浄装置および半導体基板の洗浄方法
US8324093B2 (en) * 2009-07-23 2012-12-04 GlobalFoundries, Inc. Methods for fabricating semiconductor devices including azeotropic drying processes
US9335367B2 (en) * 2013-08-27 2016-05-10 International Business Machines Corporation Implementing low temperature wafer test
JP6426927B2 (ja) 2013-09-30 2018-11-21 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
US9580672B2 (en) * 2014-09-26 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning composition and method for semiconductor device fabrication
US20180074115A1 (en) * 2016-09-09 2018-03-15 General Electric Company Residual ionic cleanliness evaluation component
EP3635421A1 (en) * 2017-06-05 2020-04-15 Cutsforth Inc. Monitoring system for grounding apparatus
US10767941B2 (en) * 2018-09-14 2020-09-08 Ford Global Technologies, Llc Method of forming a superhydrophobic layer on a motor vehicle heat exchanger housing and a heat exchanger incorporating such a housing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006083308A (ja) * 2004-09-16 2006-03-30 Nippon Zeon Co Ltd 洗浄剤組成物
CN101107697A (zh) * 2005-01-21 2008-01-16 株式会社尼康 Cmp研磨方法、cmp研磨装置和半导体器件的制造方法

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6250490A (ja) 1985-08-29 1987-03-05 Asahi Chem Ind Co Ltd 銀もしくは銀メツキ製品の洗浄方法
US4983490A (en) * 1985-10-28 1991-01-08 Hoechst Celanese Corporation Photoresist treating composition consisting of a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US4746397A (en) * 1986-01-17 1988-05-24 Matsushita Electric Industrial Co., Ltd. Treatment method for plate-shaped substrate
US4683075A (en) 1986-07-23 1987-07-28 Allied Corporation Azeotrope-like compositions of trichlorotrifluoroethane, methanol, nitromethane, acetone, and methyl acetate
JPH01139539A (ja) 1987-11-25 1989-06-01 Asahi Glass Co Ltd 共沸組成物の安定化方法
JPH01318092A (ja) 1988-06-17 1989-12-22 Asahi Glass Co Ltd 混合溶剤組成物
JPH02200789A (ja) 1989-01-31 1990-08-09 Asahi Glass Co Ltd 脱脂洗浄剤
JPH02200788A (ja) 1989-01-31 1990-08-09 Asahi Glass Co Ltd バフ研磨洗浄剤
CA2008882A1 (en) 1989-02-01 1990-08-01 Takamasa Tsumoto Washing agent, washing method and process for preparing semiconductor integrated circuit device by use thereof
ES2083978T3 (es) 1989-02-01 1996-05-01 Asahi Glass Co Ltd Mezcla azeotropica o similar a una mezcla azeotropica a base de hidrocarburos hidrogenados, clorados y fluorados.
JPH02202998A (ja) 1989-02-02 1990-08-13 Asahi Glass Co Ltd 混合溶剤組成物
JPH03179097A (ja) 1989-12-07 1991-08-05 Daikin Ind Ltd 洗浄剤組成物
AU635362B2 (en) 1989-12-07 1993-03-18 Daikin Industries, Ltd. Cleaning composition
FR2658532B1 (fr) 1990-02-20 1992-05-15 Atochem Application des (perfluoroalkyl)-ethylenes comme agents de nettoyage ou de sechage, et compositions utilisables a cet effet.
US5458800A (en) 1990-02-20 1995-10-17 Societe Atochem Use of (perfluoroalkyl) ethylenes as cleaning or drying agents, and compositions which can be used for this purpose
US5426017A (en) 1990-05-31 1995-06-20 Hoechst Celanese Corporation Composition and method for removing photoresist composition from substrates surfaces
BE1005163A3 (fr) 1991-08-01 1993-05-11 Solvay Compositions contenant un ether fluore et utilisation de ces compositions.
US5773403A (en) * 1992-01-21 1998-06-30 Olympus Optical Co., Ltd. Cleaning and drying solvent
JPH06179897A (ja) 1992-12-15 1994-06-28 Asahi Chem Ind Co Ltd 洗浄用溶剤
JPH06179896A (ja) 1992-12-15 1994-06-28 Asahi Chem Ind Co Ltd 洗浄剤
JPH06184595A (ja) 1992-12-18 1994-07-05 Nitto Chem Ind Co Ltd レジスト剥離工程用洗浄剤
JPH06212193A (ja) 1992-12-21 1994-08-02 Nitto Chem Ind Co Ltd レジスト剥離剤除去用洗浄剤
WO1994014858A1 (en) 1992-12-29 1994-07-07 Hoechst Celanese Corporation Metal ion reduction in polyhydroxystyrene and photoresists
JPH06293899A (ja) 1993-04-08 1994-10-21 Nitto Chem Ind Co Ltd フラックス除去用洗浄剤
JP3619261B2 (ja) 1993-06-15 2005-02-09 三菱レイヨン株式会社 溶剤組成物
JP2816928B2 (ja) * 1993-09-16 1998-10-27 花王株式会社 洗浄方法
JP3264405B2 (ja) 1994-01-07 2002-03-11 三菱瓦斯化学株式会社 半導体装置洗浄剤および半導体装置の製造方法
JP3074634B2 (ja) * 1994-03-28 2000-08-07 三菱瓦斯化学株式会社 フォトレジスト用剥離液及び配線パターンの形成方法
JPH08151600A (ja) 1994-11-28 1996-06-11 Central Glass Co Ltd 混合洗浄溶剤
JPH08211592A (ja) 1995-02-07 1996-08-20 Nikon Corp 洗浄乾燥方法及び洗浄乾燥装置
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
JPH10289891A (ja) 1997-04-11 1998-10-27 Mitsubishi Gas Chem Co Inc 半導体回路用洗浄剤及びそれを用いた半導体回路の製造方法
JP3978255B2 (ja) 1997-06-24 2007-09-19 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用洗浄剤
JPH1121187A (ja) 1997-07-02 1999-01-26 Ngk Insulators Ltd セラミックス製品の洗浄方法
US6689734B2 (en) 1997-07-30 2004-02-10 Kyzen Corporation Low ozone depleting brominated compound mixtures for use in solvent and cleaning applications
JP3975301B2 (ja) 1997-08-22 2007-09-12 三菱瓦斯化学株式会社 半導体素子製造用洗浄液及びこれを用いた半導体素子 の製造方法
BE1011609A3 (fr) 1997-12-15 1999-11-09 Solvay Compositions comprenant du perfluorobutyl methyl ether et utilisation de ces compositions.
JPH11212276A (ja) 1998-01-26 1999-08-06 Daicel Chem Ind Ltd 電子部品用基板のリンス液、及びこのリンス液を用いた電子部品用基板のリンス処理法
JPH11218933A (ja) * 1998-01-30 1999-08-10 Fuji Film Olin Kk レジスト洗浄除去用溶剤および電子部品製造用基材の製造方法
JPH11323394A (ja) * 1998-05-14 1999-11-26 Texas Instr Japan Ltd 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法
US6517636B1 (en) 1999-01-05 2003-02-11 Cfmt, Inc. Method for reducing particle contamination during the wet processing of semiconductor substrates
JP4224651B2 (ja) * 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
KR100434485B1 (ko) 1999-10-08 2004-06-05 삼성전자주식회사 포토레지스트 스트립퍼 조성물 및 이를 이용한 포토레지스트 스트립 방법
IT1317827B1 (it) 2000-02-11 2003-07-15 Ausimont Spa Composizioni solventi.
US6488040B1 (en) 2000-06-30 2002-12-03 Lam Research Corporation Capillary proximity heads for single wafer cleaning and drying
JP4959095B2 (ja) 2000-07-10 2012-06-20 イーケイシー テクノロジー インコーポレーテッド 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
US6486078B1 (en) 2000-08-22 2002-11-26 Advanced Micro Devices, Inc. Super critical drying of low k materials
US6401361B1 (en) 2000-11-15 2002-06-11 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for drying wafers by a solvent
US6764551B2 (en) 2001-10-05 2004-07-20 International Business Machines Corporation Process for removing dopant ions from a substrate
US6737225B2 (en) 2001-12-28 2004-05-18 Texas Instruments Incorporated Method of undercutting micro-mechanical device with super-critical carbon dioxide
EP1554033A4 (en) 2002-02-06 2007-12-05 Fujifilm Electronic Materials IMPROVED COMPOSITIONS FOR REMOVING BORED BEADS OF SEMICONDUCTOR LOADING BUFFER COATINGS AND METHOD FOR THEIR USE
US6699829B2 (en) 2002-06-07 2004-03-02 Kyzen Corporation Cleaning compositions containing dichloroethylene and six carbon alkoxy substituted perfluoro compounds
US7833957B2 (en) * 2002-08-22 2010-11-16 Daikin Industries, Ltd. Removing solution
KR100951364B1 (ko) 2003-06-03 2010-04-08 주식회사 동진쎄미켐 포토레지스트 제거용 씬너 조성물
KR20050032719A (ko) 2003-10-02 2005-04-08 주식회사 동진쎄미켐 포토레지스트 제거용 씬너 조성물
KR101142868B1 (ko) 2004-05-25 2012-05-10 주식회사 동진쎄미켐 포토레지스트 제거용 씬너 조성물
US6926590B1 (en) 2004-06-25 2005-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method of improving device performance
JP4442376B2 (ja) 2004-09-22 2010-03-31 東ソー株式会社 レジスト除去用組成物
US8026201B2 (en) * 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer
US8021490B2 (en) * 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006083308A (ja) * 2004-09-16 2006-03-30 Nippon Zeon Co Ltd 洗浄剤組成物
CN101107697A (zh) * 2005-01-21 2008-01-16 株式会社尼康 Cmp研磨方法、cmp研磨装置和半导体器件的制造方法

Also Published As

Publication number Publication date
KR20090106499A (ko) 2009-10-09
TW200840866A (en) 2008-10-16
JP2010516044A (ja) 2010-05-13
CN101573777A (zh) 2009-11-04
US8021490B2 (en) 2011-09-20
US20080163893A1 (en) 2008-07-10
WO2008085390A2 (en) 2008-07-17
WO2008085390A3 (en) 2008-10-16
EP2106616A2 (en) 2009-10-07

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