TWI491023B - 記憶體元件，製造其之方法，及記憶體裝置 - Google Patents

記憶體元件，製造其之方法，及記憶體裝置 Download PDF

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Publication number
TWI491023B
TWI491023B TW101120550A TW101120550A TWI491023B TW I491023 B TWI491023 B TW I491023B TW 101120550 A TW101120550 A TW 101120550A TW 101120550 A TW101120550 A TW 101120550A TW I491023 B TWI491023 B TW I491023B
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TW
Taiwan
Prior art keywords
layer
memory
ion source
electrode
elements
Prior art date
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TW101120550A
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English (en)
Chinese (zh)
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TW201304123A (zh
Inventor
Kazuhiro Ohba
Tetsuya Mizuguchi
Shuichiro Yasuda
Masayuki Shimuta
Katsuhisa Aratani
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Publication of TW201304123A publication Critical patent/TW201304123A/zh
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Publication of TWI491023B publication Critical patent/TWI491023B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/11—Metal ion trapping, i.e. using memory material including cavities, pores or spaces in form of tunnels or channels wherein metal ions can be trapped but do not react and form an electro-deposit creating filaments or dendrites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
TW101120550A 2011-06-30 2012-06-07 記憶體元件，製造其之方法，及記憶體裝置 TWI491023B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011146114A JP2013016530A (ja) 2011-06-30 2011-06-30 記憶素子およびその製造方法ならびに記憶装置

Publications (2)

Publication Number Publication Date
TW201304123A TW201304123A (zh) 2013-01-16
TWI491023B true TWI491023B (zh) 2015-07-01

Family

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Family Applications (1)

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TW101120550A TWI491023B (zh) 2011-06-30 2012-06-07 記憶體元件，製造其之方法，及記憶體裝置

Country Status (5)

Country Link
US (2) US8912516B2 (enExample)
JP (1) JP2013016530A (enExample)
KR (1) KR102015135B1 (enExample)
CN (1) CN102856492A (enExample)
TW (1) TWI491023B (enExample)

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FR3022393B1 (fr) 2014-06-11 2016-07-01 Commissariat Energie Atomique Dispositif de memoire vive resistive
FR3022392B1 (fr) * 2014-06-12 2018-01-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de memoire vive resistive
US10693062B2 (en) * 2015-12-08 2020-06-23 Crossbar, Inc. Regulating interface layer formation for two-terminal memory
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CN107732010B (zh) * 2017-09-29 2020-07-10 华中科技大学 一种选通管器件及其制备方法
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CN112582537B (zh) * 2021-01-11 2022-09-20 广西师范大学 一种调控无铅双钙钛矿基阻变存储器实现多态存储的方法

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Also Published As

Publication number Publication date
US20130001497A1 (en) 2013-01-03
JP2013016530A (ja) 2013-01-24
KR102015135B1 (ko) 2019-08-27
US8912516B2 (en) 2014-12-16
US20150072499A1 (en) 2015-03-12
TW201304123A (zh) 2013-01-16
KR20130007436A (ko) 2013-01-18
US9356232B2 (en) 2016-05-31
CN102856492A (zh) 2013-01-02

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