JP2013016530A - 記憶素子およびその製造方法ならびに記憶装置 - Google Patents

記憶素子およびその製造方法ならびに記憶装置 Download PDF

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Publication number
JP2013016530A
JP2013016530A JP2011146114A JP2011146114A JP2013016530A JP 2013016530 A JP2013016530 A JP 2013016530A JP 2011146114 A JP2011146114 A JP 2011146114A JP 2011146114 A JP2011146114 A JP 2011146114A JP 2013016530 A JP2013016530 A JP 2013016530A
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Japan
Prior art keywords
layer
memory
electrode
ion source
chalcogen
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Pending
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JP2011146114A
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English (en)
Japanese (ja)
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JP2013016530A5 (enExample
Inventor
Kazuhiro Oba
和博 大場
Tetsuya Mizuguchi
徹也 水口
Shuichiro Yasuda
周一郎 保田
Masayuki Shimuta
雅之 紫牟田
Katsuhisa Araya
勝久 荒谷
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011146114A priority Critical patent/JP2013016530A/ja
Priority to TW101120550A priority patent/TWI491023B/zh
Priority to KR1020120065414A priority patent/KR102015135B1/ko
Priority to US13/527,779 priority patent/US8912516B2/en
Priority to CN2012102107593A priority patent/CN102856492A/zh
Publication of JP2013016530A publication Critical patent/JP2013016530A/ja
Publication of JP2013016530A5 publication Critical patent/JP2013016530A5/ja
Priority to US14/540,258 priority patent/US9356232B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/11—Metal ion trapping, i.e. using memory material including cavities, pores or spaces in form of tunnels or channels wherein metal ions can be trapped but do not react and form an electro-deposit creating filaments or dendrites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
JP2011146114A 2011-06-30 2011-06-30 記憶素子およびその製造方法ならびに記憶装置 Pending JP2013016530A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011146114A JP2013016530A (ja) 2011-06-30 2011-06-30 記憶素子およびその製造方法ならびに記憶装置
TW101120550A TWI491023B (zh) 2011-06-30 2012-06-07 記憶體元件，製造其之方法，及記憶體裝置
KR1020120065414A KR102015135B1 (ko) 2011-06-30 2012-06-19 기억 소자 및 그 제조 방법 및 기억 장치
US13/527,779 US8912516B2 (en) 2011-06-30 2012-06-20 Memory element with ion source layer and memory device
CN2012102107593A CN102856492A (zh) 2011-06-30 2012-06-20 存储元件、其制造方法以及存储装置
US14/540,258 US9356232B2 (en) 2011-06-30 2014-11-13 Method of making memory element with ion source layer comprised of two or more unit IO source layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011146114A JP2013016530A (ja) 2011-06-30 2011-06-30 記憶素子およびその製造方法ならびに記憶装置

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JP2013016530A true JP2013016530A (ja) 2013-01-24
JP2013016530A5 JP2013016530A5 (enExample) 2014-08-07

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US (2) US8912516B2 (enExample)
JP (1) JP2013016530A (enExample)
KR (1) KR102015135B1 (enExample)
CN (1) CN102856492A (enExample)
TW (1) TWI491023B (enExample)

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CN110379865A (zh) * 2013-05-02 2019-10-25 第一阳光公司 光伏装置及制作方法
JP2020519010A (ja) * 2017-04-28 2020-06-25 マイクロン テクノロジー，インク． 自己選択メモリにおけるプログラミング改良
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FR3022393B1 (fr) 2014-06-11 2016-07-01 Commissariat Energie Atomique Dispositif de memoire vive resistive
FR3022392B1 (fr) * 2014-06-12 2018-01-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de memoire vive resistive
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TWI771597B (zh) * 2019-02-22 2022-07-21 日商東芝記憶體股份有限公司 半導體儲存裝置
JP2021048310A (ja) * 2019-09-19 2021-03-25 ソニーセミコンダクタソリューションズ株式会社 記憶素子および記憶装置
CN112582537B (zh) * 2021-01-11 2022-09-20 广西师范大学 一种调控无铅双钙钛矿基阻变存储器实现多态存储的方法

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Publication number Priority date Publication date Assignee Title
JP2016512390A (ja) * 2013-03-03 2016-04-25 アデスト テクノロジーズ コーポレーションＡｄｅｓｔｏ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｒｐｏｒａｔｉｏｎ スイッチング層および中間電極層を有した抵抗性スイッチングデバイス並びにその形成方法
CN110379865A (zh) * 2013-05-02 2019-10-25 第一阳光公司 光伏装置及制作方法
JP2020519010A (ja) * 2017-04-28 2020-06-25 マイクロン テクノロジー，インク． 自己選択メモリにおけるプログラミング改良
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US11404637B2 (en) 2018-02-09 2022-08-02 Micron Technology, Inc. Tapered cell profile and fabrication
US11545625B2 (en) 2018-02-09 2023-01-03 Micron Technology, Inc. Tapered memory cell profiles
US11800816B2 (en) 2018-02-09 2023-10-24 Micron Technology, Inc. Dopant-modulated etching for memory devices
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Also Published As

Publication number Publication date
US20130001497A1 (en) 2013-01-03
KR102015135B1 (ko) 2019-08-27
US8912516B2 (en) 2014-12-16
US20150072499A1 (en) 2015-03-12
TW201304123A (zh) 2013-01-16
KR20130007436A (ko) 2013-01-18
US9356232B2 (en) 2016-05-31
TWI491023B (zh) 2015-07-01
CN102856492A (zh) 2013-01-02

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