JP2013016530A5 - - Google Patents
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- Publication number
- JP2013016530A5 JP2013016530A5 JP2011146114A JP2011146114A JP2013016530A5 JP 2013016530 A5 JP2013016530 A5 JP 2013016530A5 JP 2011146114 A JP2011146114 A JP 2011146114A JP 2011146114 A JP2011146114 A JP 2011146114A JP 2013016530 A5 JP2013016530 A5 JP 2013016530A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- chalcogen
- memory
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052798 chalcogen Inorganic materials 0.000 claims description 43
- 150000001787 chalcogens Chemical class 0.000 claims description 43
- 239000011669 selenium Substances 0.000 claims description 22
- 238000003860 storage Methods 0.000 claims description 17
- 230000008859 change Effects 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 11
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052711 selenium Inorganic materials 0.000 claims description 11
- 229910052717 sulfur Inorganic materials 0.000 claims description 11
- 239000011593 sulfur Substances 0.000 claims description 11
- 229910052714 tellurium Inorganic materials 0.000 claims description 10
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- 239000003792 electrolyte Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 167
- 150000002500 ions Chemical class 0.000 description 42
- 239000000203 mixture Substances 0.000 description 6
- 230000014759 maintenance of location Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910017680 MgTe Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001786 chalcogen compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- OCVXZQOKBHXGRU-UHFFFAOYSA-N iodine(1+) Chemical compound [I+] OCVXZQOKBHXGRU-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011146114A JP2013016530A (ja) | 2011-06-30 | 2011-06-30 | 記憶素子およびその製造方法ならびに記憶装置 |
| TW101120550A TWI491023B (zh) | 2011-06-30 | 2012-06-07 | 記憶體元件，製造其之方法，及記憶體裝置 |
| KR1020120065414A KR102015135B1 (ko) | 2011-06-30 | 2012-06-19 | 기억 소자 및 그 제조 방법 및 기억 장치 |
| US13/527,779 US8912516B2 (en) | 2011-06-30 | 2012-06-20 | Memory element with ion source layer and memory device |
| CN2012102107593A CN102856492A (zh) | 2011-06-30 | 2012-06-20 | 存储元件、其制造方法以及存储装置 |
| US14/540,258 US9356232B2 (en) | 2011-06-30 | 2014-11-13 | Method of making memory element with ion source layer comprised of two or more unit IO source layers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011146114A JP2013016530A (ja) | 2011-06-30 | 2011-06-30 | 記憶素子およびその製造方法ならびに記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013016530A JP2013016530A (ja) | 2013-01-24 |
| JP2013016530A5 true JP2013016530A5 (enExample) | 2014-08-07 |
Family
ID=47389624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011146114A Pending JP2013016530A (ja) | 2011-06-30 | 2011-06-30 | 記憶素子およびその製造方法ならびに記憶装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8912516B2 (enExample) |
| JP (1) | JP2013016530A (enExample) |
| KR (1) | KR102015135B1 (enExample) |
| CN (1) | CN102856492A (enExample) |
| TW (1) | TWI491023B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9685608B2 (en) * | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
| US9252359B2 (en) * | 2013-03-03 | 2016-02-02 | Adesto Technologies Corporation | Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof |
| US20140264224A1 (en) * | 2013-03-14 | 2014-09-18 | Intermolecular, Inc. | Performance Enhancement of Forming-Free ReRAM Devices Using 3D Nanoparticles |
| US11876140B2 (en) * | 2013-05-02 | 2024-01-16 | First Solar, Inc. | Photovoltaic devices and method of making |
| US9246086B2 (en) | 2013-10-02 | 2016-01-26 | Sony Corporation | Conductive bridge memory system and method of manufacture thereof |
| US8981334B1 (en) * | 2013-11-01 | 2015-03-17 | Micron Technology, Inc. | Memory cells having regions containing one or both of carbon and boron |
| JP6614758B2 (ja) * | 2014-03-14 | 2019-12-04 | 古河電気工業株式会社 | 絶縁電線、絶縁電線の製造方法、回転電機用ステータの製造方法および回転電機 |
| FR3022393B1 (fr) | 2014-06-11 | 2016-07-01 | Commissariat Energie Atomique | Dispositif de memoire vive resistive |
| FR3022392B1 (fr) * | 2014-06-12 | 2018-01-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de memoire vive resistive |
| US10693062B2 (en) * | 2015-12-08 | 2020-06-23 | Crossbar, Inc. | Regulating interface layer formation for two-terminal memory |
| US9953705B2 (en) | 2016-04-26 | 2018-04-24 | Western Digital Technologies, Inc. | Planar memory cell architectures in resistive memory devices |
| US20170316824A1 (en) * | 2016-04-29 | 2017-11-02 | HGST Netherlands B.V. | Multi-layer resistive memory devices |
| US10424374B2 (en) | 2017-04-28 | 2019-09-24 | Micron Technology, Inc. | Programming enhancement in self-selecting memory |
| CN107732010B (zh) * | 2017-09-29 | 2020-07-10 | 华中科技大学 | 一种选通管器件及其制备方法 |
| US10693065B2 (en) | 2018-02-09 | 2020-06-23 | Micron Technology, Inc. | Tapered cell profile and fabrication |
| US10854813B2 (en) | 2018-02-09 | 2020-12-01 | Micron Technology, Inc. | Dopant-modulated etching for memory devices |
| US10541364B2 (en) | 2018-02-09 | 2020-01-21 | Micron Technology, Inc. | Memory cells with asymmetrical electrode interfaces |
| US10424730B2 (en) | 2018-02-09 | 2019-09-24 | Micron Technology, Inc. | Tapered memory cell profiles |
| TWI771597B (zh) * | 2019-02-22 | 2022-07-21 | 日商東芝記憶體股份有限公司 | 半導體儲存裝置 |
| JP2021048310A (ja) * | 2019-09-19 | 2021-03-25 | ソニーセミコンダクタソリューションズ株式会社 | 記憶素子および記憶装置 |
| CN112582537B (zh) * | 2021-01-11 | 2022-09-20 | 广西师范大学 | 一种调控无铅双钙钛矿基阻变存储器实现多态存储的方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7675766B2 (en) * | 2000-02-11 | 2010-03-09 | Axon Technologies Corporation | Microelectric programmable device and methods of forming and programming the same |
| JP3675354B2 (ja) * | 2001-05-08 | 2005-07-27 | ソニー株式会社 | 固体電解質電池およびその製造方法 |
| KR100954970B1 (ko) * | 2001-10-12 | 2010-04-29 | 소니 주식회사 | 자기 저항 효과 소자, 자기 메모리 소자, 자기 메모리 장치 및 이들의 제조 방법 |
| JP2003218427A (ja) * | 2002-01-23 | 2003-07-31 | Sony Corp | 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置 |
| JP4100025B2 (ja) * | 2002-04-09 | 2008-06-11 | ソニー株式会社 | 磁気抵抗効果素子及び磁気メモリ装置 |
| JP4042478B2 (ja) * | 2002-06-19 | 2008-02-06 | ソニー株式会社 | 磁気抵抗効果素子及び磁気メモリ装置 |
| JP3678213B2 (ja) * | 2002-06-20 | 2005-08-03 | ソニー株式会社 | 磁気抵抗効果素子及び磁気メモリ装置、磁気抵抗効果素子及び磁気メモリ装置の製造方法 |
| JP3729159B2 (ja) * | 2002-06-26 | 2005-12-21 | ソニー株式会社 | 磁気メモリ装置 |
| JP4178867B2 (ja) * | 2002-08-02 | 2008-11-12 | ソニー株式会社 | 磁気抵抗効果素子及び磁気メモリ装置 |
| JP2004071897A (ja) * | 2002-08-07 | 2004-03-04 | Sony Corp | 磁気抵抗効果素子及び磁気メモリ装置 |
| JP2004128015A (ja) * | 2002-09-30 | 2004-04-22 | Sony Corp | 磁気抵抗効果素子および磁気メモリ装置 |
| US20060045974A1 (en) * | 2004-08-25 | 2006-03-02 | Campbell Kristy A | Wet chemical method to form silver-rich silver-selenide |
| JP2006093432A (ja) * | 2004-09-24 | 2006-04-06 | Sony Corp | 記憶素子及びメモリ |
| JP4848633B2 (ja) * | 2004-12-14 | 2011-12-28 | ソニー株式会社 | 記憶素子及び記憶装置 |
| JP4815804B2 (ja) | 2005-01-11 | 2011-11-16 | ソニー株式会社 | 記憶素子及び記憶装置 |
| KR100623177B1 (ko) * | 2005-01-25 | 2006-09-13 | 삼성전자주식회사 | 높은 유전율을 갖는 유전체 구조물, 이의 제조 방법, 이를포함하는 불휘발성 반도체 메모리 장치 및 그 제조 방법 |
| FR2895531B1 (fr) * | 2005-12-23 | 2008-05-09 | Commissariat Energie Atomique | Procede ameliore de realisation de cellules memoires de type pmc |
| JP5007502B2 (ja) * | 2006-01-13 | 2012-08-22 | ソニー株式会社 | 記憶素子の製造方法 |
| US8003972B2 (en) * | 2006-08-30 | 2011-08-23 | Micron Technology, Inc. | Bottom electrode geometry for phase change memory |
| JP5088036B2 (ja) * | 2007-08-06 | 2012-12-05 | ソニー株式会社 | 記憶素子および記憶装置 |
| JP4539885B2 (ja) * | 2007-08-06 | 2010-09-08 | ソニー株式会社 | 記憶素子および記憶装置 |
| JP5194640B2 (ja) * | 2007-08-22 | 2013-05-08 | ソニー株式会社 | 記憶素子および記憶装置 |
| JP5050813B2 (ja) * | 2007-11-29 | 2012-10-17 | ソニー株式会社 | メモリセル |
| JP4466738B2 (ja) * | 2008-01-09 | 2010-05-26 | ソニー株式会社 | 記憶素子および記憶装置 |
| WO2009122567A1 (ja) * | 2008-04-01 | 2009-10-08 | 株式会社 東芝 | 情報記録再生装置 |
| JP5397668B2 (ja) * | 2008-09-02 | 2014-01-22 | ソニー株式会社 | 記憶素子および記憶装置 |
| TW201011909A (en) * | 2008-09-02 | 2010-03-16 | Sony Corp | Storage element and storage device |
| JP2010177393A (ja) * | 2009-01-29 | 2010-08-12 | Sony Corp | 半導体記憶装置およびその製造方法 |
| US8279650B2 (en) * | 2009-04-20 | 2012-10-02 | Sandisk 3D Llc | Memory system with data line switching scheme |
| US8320178B2 (en) * | 2009-07-02 | 2012-11-27 | Actel Corporation | Push-pull programmable logic device cell |
| JP2011124511A (ja) * | 2009-12-14 | 2011-06-23 | Sony Corp | 記憶素子および記憶装置 |
| US8134139B2 (en) * | 2010-01-25 | 2012-03-13 | Macronix International Co., Ltd. | Programmable metallization cell with ion buffer layer |
| JP5732827B2 (ja) * | 2010-02-09 | 2015-06-10 | ソニー株式会社 | 記憶素子および記憶装置、並びに記憶装置の動作方法 |
| JP2012199336A (ja) * | 2011-03-18 | 2012-10-18 | Sony Corp | 記憶素子および記憶装置 |
-
2011
- 2011-06-30 JP JP2011146114A patent/JP2013016530A/ja active Pending
-
2012
- 2012-06-07 TW TW101120550A patent/TWI491023B/zh not_active IP Right Cessation
- 2012-06-19 KR KR1020120065414A patent/KR102015135B1/ko not_active Expired - Fee Related
- 2012-06-20 CN CN2012102107593A patent/CN102856492A/zh active Pending
- 2012-06-20 US US13/527,779 patent/US8912516B2/en active Active
-
2014
- 2014-11-13 US US14/540,258 patent/US9356232B2/en not_active Expired - Fee Related
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