TWI488815B - 經改質顆粒及包含其之分散液 - Google Patents

經改質顆粒及包含其之分散液 Download PDF

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Publication number
TWI488815B
TWI488815B TW098129750A TW98129750A TWI488815B TW I488815 B TWI488815 B TW I488815B TW 098129750 A TW098129750 A TW 098129750A TW 98129750 A TW98129750 A TW 98129750A TW I488815 B TWI488815 B TW I488815B
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TW
Taiwan
Prior art keywords
particles
dispersion
metal
group
substrate
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TW098129750A
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English (en)
Chinese (zh)
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TW201016614A (en
Inventor
伊美 朵米克
安左 卡帕芙
哈慕特 希比斯特
羅朵斯拉芙 帕洛斯可芙
茵高芙 漢寧
馬可 凱斯特勒
弗瑞德瑞克 弗利斯奇可
羅沙 威伯
彼得 艾克爾
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巴地斯顏料化工廠
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Publication of TW201016614A publication Critical patent/TW201016614A/zh
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Publication of TWI488815B publication Critical patent/TWI488815B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/04—Compounds of zinc
    • C09C1/043—Zinc oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H10P14/265—
    • H10P14/3426—
    • H10P14/3434—
    • H10P14/3461—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
    • Y10T428/2995—Silane, siloxane or silicone coating

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
TW098129750A 2008-09-04 2009-09-03 經改質顆粒及包含其之分散液 TWI488815B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08163703 2008-09-04

Publications (2)

Publication Number Publication Date
TW201016614A TW201016614A (en) 2010-05-01
TWI488815B true TWI488815B (zh) 2015-06-21

Family

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TW098129750A TWI488815B (zh) 2008-09-04 2009-09-03 經改質顆粒及包含其之分散液

Country Status (7)

Country Link
US (1) US8734899B2 (enExample)
EP (1) EP2321373A1 (enExample)
JP (1) JP5599797B2 (enExample)
KR (1) KR20110066162A (enExample)
CN (1) CN102144004B (enExample)
TW (1) TWI488815B (enExample)
WO (1) WO2010026102A1 (enExample)

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EP2376230B1 (de) 2008-12-11 2014-07-30 Basf Se Anreicherung von werterzen aus minenabfall (tailings)
US8940814B2 (en) * 2008-12-12 2015-01-27 Basf Se Dispersions comprising functionalized oxidic nanoparticles
WO2010100181A1 (de) 2009-03-04 2010-09-10 Basf Se Magnetische trennung von buntmetallerzen durch mehrstufige konditionierung
EP2501472A1 (de) * 2009-11-20 2012-09-26 Basf Se Mehrlagenkatalysator zur herstellung von carbonsäuren und/oder carbonsäureanhydriden mit vanadiumantimonat in wenigstens einer katalysatorlage und verfahren zur herstellung von phthalsäureanhydrid mit niedriger hotspottemperatur
WO2011073044A1 (de) 2009-12-18 2011-06-23 Basf Se Metalloxid-feldeffekttransistoren auf mechanisch flexiblem polymersubstrat mit aus lösung prozessierbarem dielektrikum bei niedrigen temperaturen
US20110230668A1 (en) * 2010-03-19 2011-09-22 Basf Se Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide
US8901320B2 (en) 2010-04-13 2014-12-02 Basf Se Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride
JP6178725B2 (ja) 2010-04-23 2017-08-09 ピクセリジェント・テクノロジーズ，エルエルシー ナノ結晶の合成、キャップ形成および分散
CN102858690B (zh) 2010-04-28 2014-11-05 巴斯夫欧洲公司 制备呈溶液的锌配合物的方法
US8865000B2 (en) 2010-06-11 2014-10-21 Basf Se Utilization of the naturally occurring magnetic constituents of ores
US8859459B2 (en) 2010-06-30 2014-10-14 Basf Se Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride
US9212157B2 (en) 2010-07-30 2015-12-15 Basf Se Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride
US9376457B2 (en) 2010-09-03 2016-06-28 Basf Se Hydrophobic, functionalized particles
EP2632849A4 (en) 2010-10-27 2014-12-31 Pixelligent Technologies Llc SYNTHESIS, COVERAGE AND DISPERSION OF NANOCRYSTALLES
US9359689B2 (en) 2011-10-26 2016-06-07 Pixelligent Technologies, Llc Synthesis, capping and dispersion of nanocrystals
KR101978835B1 (ko) * 2012-03-16 2019-05-15 한국전자통신연구원 박막 트랜지스터
KR101757089B1 (ko) * 2013-02-04 2017-07-11 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼 저항체, 유전체 등의 전자 부품용 무기 재료 페이스트 및 그 무기 재료 페이스트의 제조 방법
FI130559B (en) * 2021-06-23 2023-11-21 Turun Yliopisto Semiconductor structure, semiconductor device, and method
KR102756449B1 (ko) * 2022-02-11 2025-01-21 한인정밀화학(주) 양자점 조성물, 이로부터 형성된 경화 패턴, 및 이를 포함하는 디스플레이 장치
CN118039856A (zh) * 2024-02-19 2024-05-14 贵州大学 锂电池用包覆及掺杂改性的高镍正极材料和低温电解液

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CN1747783A (zh) * 2003-02-06 2006-03-15 布勒潘泰克有限公司 官能胶体的化学机械制备

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Also Published As

Publication number Publication date
KR20110066162A (ko) 2011-06-16
CN102144004A (zh) 2011-08-03
EP2321373A1 (de) 2011-05-18
CN102144004B (zh) 2014-11-26
JP5599797B2 (ja) 2014-10-01
WO2010026102A1 (de) 2010-03-11
US20110163278A1 (en) 2011-07-07
JP2012501941A (ja) 2012-01-26
US8734899B2 (en) 2014-05-27
TW201016614A (en) 2010-05-01

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