CN102144004B - 改性颗粒及包含所述颗粒的分散体 - Google Patents

改性颗粒及包含所述颗粒的分散体 Download PDF

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Publication number
CN102144004B
CN102144004B CN200980134455.XA CN200980134455A CN102144004B CN 102144004 B CN102144004 B CN 102144004B CN 200980134455 A CN200980134455 A CN 200980134455A CN 102144004 B CN102144004 B CN 102144004B
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particle
dispersion
metal
properties
correcting agent
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Expired - Fee Related
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CN102144004A (zh
Inventor
I·多姆克
A·卡尔波夫
H·希布施特
R·帕卡拉什科夫
I·亨尼希
M·卡斯特勒
F·弗莱施哈克尔
L·韦伯
P·埃克勒
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/04—Compounds of zinc
    • C09C1/043—Zinc oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
    • Y10T428/2995—Silane, siloxane or silicone coating

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
CN200980134455.XA 2008-09-04 2009-08-28 改性颗粒及包含所述颗粒的分散体 Expired - Fee Related CN102144004B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08163703 2008-09-04
EP08163703.5 2008-09-04
PCT/EP2009/061103 WO2010026102A1 (de) 2008-09-04 2009-08-28 Modifizierte partikel und diese enthaltende dispersionen

Publications (2)

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CN102144004A CN102144004A (zh) 2011-08-03
CN102144004B true CN102144004B (zh) 2014-11-26

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Country Link
US (1) US8734899B2 (enExample)
EP (1) EP2321373A1 (enExample)
JP (1) JP5599797B2 (enExample)
KR (1) KR20110066162A (enExample)
CN (1) CN102144004B (enExample)
TW (1) TWI488815B (enExample)
WO (1) WO2010026102A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2009324379A1 (en) 2008-12-11 2011-07-28 Basf Se Enrichment of valuable ores from mine waste (tailings)
WO2010066768A2 (de) * 2008-12-12 2010-06-17 Basf Se Dispersionen enthaltend funktionalisierte oxidische nanopartikel
EP2403648B1 (de) 2009-03-04 2013-09-04 Basf Se Magnetische trennung von buntmetallerzen durch mehrstufige konditionierung
JP2013511377A (ja) * 2009-11-20 2013-04-04 ビーエーエスエフ ソシエタス・ヨーロピア 少なくとも１個の触媒層中にアンチモン酸バナジウムを有する、カルボン酸及び／又は無水カルボン酸を製造するための多層触媒、及び低いホットスポット温度を有する無水フタル酸の製造方法
JP2013514643A (ja) 2009-12-18 2013-04-25 ビーエーエスエフ ソシエタス・ヨーロピア 機械的に可撓性のポリマー基体上に低温で溶液から処理可能な誘電体を有する金属酸化物電界効果トランジスタ
US20110230668A1 (en) * 2010-03-19 2011-09-22 Basf Se Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide
US8901320B2 (en) 2010-04-13 2014-12-02 Basf Se Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride
WO2012058271A2 (en) 2010-10-27 2012-05-03 Pixelligent Technologies, Llc Synthesis, capping and dispersion of nanocrystals
WO2011133228A2 (en) 2010-04-23 2011-10-27 Pixelligent Technologies, Llc Synthesis, capping and dispersion of nanocrystals
CN102858690B (zh) 2010-04-28 2014-11-05 巴斯夫欧洲公司 制备呈溶液的锌配合物的方法
US8865000B2 (en) 2010-06-11 2014-10-21 Basf Se Utilization of the naturally occurring magnetic constituents of ores
US8859459B2 (en) 2010-06-30 2014-10-14 Basf Se Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride
US9212157B2 (en) 2010-07-30 2015-12-15 Basf Se Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride
US9376457B2 (en) 2010-09-03 2016-06-28 Basf Se Hydrophobic, functionalized particles
US9359689B2 (en) 2011-10-26 2016-06-07 Pixelligent Technologies, Llc Synthesis, capping and dispersion of nanocrystals
KR101978835B1 (ko) * 2012-03-16 2019-05-15 한국전자통신연구원 박막 트랜지스터
US20150371725A1 (en) * 2013-02-04 2015-12-24 National Institute Of Advanced Industrial Science And Technology Inorganic material paste for electronic components such as resistors and dielectrics, and method of producing same
FI130559B (en) * 2021-06-23 2023-11-21 Turun Yliopisto Semiconductor structure, semiconductor device, and method
KR102756449B1 (ko) * 2022-02-11 2025-01-21 한인정밀화학(주) 양자점 조성물, 이로부터 형성된 경화 패턴, 및 이를 포함하는 디스플레이 장치
CN118039856A (zh) * 2024-02-19 2024-05-14 贵州大学 锂电池用包覆及掺杂改性的高镍正极材料和低温电解液

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004010807A (ja) * 2002-06-10 2004-01-15 Toyo Ink Mfg Co Ltd 水性分散体の製造方法
CN1652997A (zh) * 2002-06-12 2005-08-10 日本板硝子株式会社 薄片形式的多孔金属氧化物材料、其生产方法和包含它的化妆品、涂布材料、树脂组合物、油墨组合物和纸张
JP2007012590A (ja) * 2005-05-30 2007-01-18 Sumitomo Electric Ind Ltd 金属被膜とその形成方法および金属配線
CN101124166A (zh) * 2004-10-04 2008-02-13 布勒潘泰克有限公司 制备具有定制的表面化学性能的纳米粒子的方法及相应的胶体
EP1900426A2 (de) * 2003-02-06 2008-03-19 Bühler PARTEC GmbH Chemomechanisch oberflächenmodifizierte Partikel und deren Herstellung

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2303330A (en) 1942-02-02 1942-12-01 New Jersey Zinc Co Zinc oxide
DE19907704A1 (de) * 1999-02-23 2000-08-24 Bayer Ag Nanopartikuläres, redispergierbares Fällungszinkoxid
DE10063092A1 (de) 2000-12-18 2002-06-20 Henkel Kgaa Nanoskalige Materialien in Hygiene-Produkten
JP2003073122A (ja) * 2001-09-04 2003-03-12 Mitsui Chemicals Inc 無機微粒子分散液及びそれを用いて製造される複合材料組成物
US7553512B2 (en) 2001-11-02 2009-06-30 Cabot Corporation Method for fabricating an inorganic resistor
JP2004182483A (ja) * 2002-11-29 2004-07-02 Mitsubishi Chemicals Corp 酸化亜鉛超微粒子の製造方法
DE10257388A1 (de) 2002-12-06 2004-06-24 Sustech Gmbh & Co. Kg Nanopartikuläres redispergierbares Zinkoxidpulver
JP3775432B2 (ja) 2003-03-31 2006-05-17 東陶機器株式会社 表面改質二酸化チタン微粒子とその分散液、およびその製造方法
WO2006038420A1 (ja) * 2004-09-30 2006-04-13 Kaneka Corporation ポリマー修飾金属カルコゲン化物ナノ粒子の製造方法
DE102005007374A1 (de) 2005-02-17 2006-08-24 Universität Ulm Nanopartikel und deren Verwendung
DE102005047807A1 (de) 2005-06-04 2006-12-07 Solvay Infra Bad Hönningen GmbH Modifizierte Nanopartikel
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
JP4738931B2 (ja) * 2005-07-29 2011-08-03 富士フイルム株式会社 ナノ粒子分散液、それを用いた半導体デバイスの製造方法及び半導体デバイス
KR100768632B1 (ko) * 2006-10-30 2007-10-18 삼성전자주식회사 나노입자의 분산방법 및 이를 이용한 나노입자 박막의제조방법
KR20080108767A (ko) * 2007-06-11 2008-12-16 삼성에스디아이 주식회사 전극 단자부 코팅재 및 이를 구비한 플라즈마 디스플레이패널

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004010807A (ja) * 2002-06-10 2004-01-15 Toyo Ink Mfg Co Ltd 水性分散体の製造方法
CN1652997A (zh) * 2002-06-12 2005-08-10 日本板硝子株式会社 薄片形式的多孔金属氧化物材料、其生产方法和包含它的化妆品、涂布材料、树脂组合物、油墨组合物和纸张
EP1900426A2 (de) * 2003-02-06 2008-03-19 Bühler PARTEC GmbH Chemomechanisch oberflächenmodifizierte Partikel und deren Herstellung
CN101124166A (zh) * 2004-10-04 2008-02-13 布勒潘泰克有限公司 制备具有定制的表面化学性能的纳米粒子的方法及相应的胶体
JP2007012590A (ja) * 2005-05-30 2007-01-18 Sumitomo Electric Ind Ltd 金属被膜とその形成方法および金属配線

Also Published As

Publication number Publication date
WO2010026102A1 (de) 2010-03-11
JP5599797B2 (ja) 2014-10-01
TW201016614A (en) 2010-05-01
CN102144004A (zh) 2011-08-03
JP2012501941A (ja) 2012-01-26
KR20110066162A (ko) 2011-06-16
US20110163278A1 (en) 2011-07-07
TWI488815B (zh) 2015-06-21
US8734899B2 (en) 2014-05-27
EP2321373A1 (de) 2011-05-18

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