KR20110066162A - 개질된 입자 및 이 입자를 포함하는 분산액 - Google Patents

개질된 입자 및 이 입자를 포함하는 분산액 Download PDF

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Publication number
KR20110066162A
KR20110066162A KR1020117007826A KR20117007826A KR20110066162A KR 20110066162 A KR20110066162 A KR 20110066162A KR 1020117007826 A KR1020117007826 A KR 1020117007826A KR 20117007826 A KR20117007826 A KR 20117007826A KR 20110066162 A KR20110066162 A KR 20110066162A
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South Korea
Prior art keywords
metal
particles
particle
dispersion
modifier
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Abandoned
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KR1020117007826A
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English (en)
Korean (ko)
Inventor
임메 돔케
안드레이 카르포브
하르트무트 히브슈트
라도슬라브 파라쉬코브
인골프 헨닉
마르셀 카스틀러
프리데리케 플리쉬하케르
로타 베버
피터 엑케를레
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바스프 에스이
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Publication of KR20110066162A publication Critical patent/KR20110066162A/ko
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/04—Compounds of zinc
    • C09C1/043—Zinc oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
    • Y10T428/2995—Silane, siloxane or silicone coating

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
KR1020117007826A 2008-09-04 2009-08-28 개질된 입자 및 이 입자를 포함하는 분산액 Abandoned KR20110066162A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08163703.5 2008-09-04
EP08163703 2008-09-04

Publications (1)

Publication Number Publication Date
KR20110066162A true KR20110066162A (ko) 2011-06-16

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Application Number Title Priority Date Filing Date
KR1020117007826A Abandoned KR20110066162A (ko) 2008-09-04 2009-08-28 개질된 입자 및 이 입자를 포함하는 분산액

Country Status (7)

Country Link
US (1) US8734899B2 (enExample)
EP (1) EP2321373A1 (enExample)
JP (1) JP5599797B2 (enExample)
KR (1) KR20110066162A (enExample)
CN (1) CN102144004B (enExample)
TW (1) TWI488815B (enExample)
WO (1) WO2010026102A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130105165A (ko) * 2012-03-16 2013-09-25 한국전자통신연구원 박막 트랜지스터
KR20230121343A (ko) * 2022-02-11 2023-08-18 한인정밀화학(주) 양자점 조성물, 이로부터 형성된 경화 패턴, 및 이를 포함하는 디스플레이 장치

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CN102271817B (zh) 2008-12-11 2014-10-01 巴斯夫欧洲公司 从尾矿中富集有价值矿石的方法
US8940814B2 (en) * 2008-12-12 2015-01-27 Basf Se Dispersions comprising functionalized oxidic nanoparticles
PE20120730A1 (es) 2009-03-04 2012-06-15 Basf Se Separacion magnetica de minerales metalicos no ferrosos por acondicionamiento en multiples etapas
EP2501472A1 (de) * 2009-11-20 2012-09-26 Basf Se Mehrlagenkatalysator zur herstellung von carbonsäuren und/oder carbonsäureanhydriden mit vanadiumantimonat in wenigstens einer katalysatorlage und verfahren zur herstellung von phthalsäureanhydrid mit niedriger hotspottemperatur
US9263591B2 (en) 2009-12-18 2016-02-16 Basf Se Metal oxide field effect transistors on a mechanically flexible polymer substrate having a die-lectric that can be processed from solution at low temperatures
US20110230668A1 (en) * 2010-03-19 2011-09-22 Basf Se Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide
US8901320B2 (en) 2010-04-13 2014-12-02 Basf Se Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride
WO2011133228A2 (en) 2010-04-23 2011-10-27 Pixelligent Technologies, Llc Synthesis, capping and dispersion of nanocrystals
CN102858690B (zh) 2010-04-28 2014-11-05 巴斯夫欧洲公司 制备呈溶液的锌配合物的方法
US8865000B2 (en) 2010-06-11 2014-10-21 Basf Se Utilization of the naturally occurring magnetic constituents of ores
US8859459B2 (en) 2010-06-30 2014-10-14 Basf Se Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride
US9212157B2 (en) 2010-07-30 2015-12-15 Basf Se Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride
US9376457B2 (en) 2010-09-03 2016-06-28 Basf Se Hydrophobic, functionalized particles
US8920675B2 (en) 2010-10-27 2014-12-30 Pixelligent Technologies, Llc Synthesis, capping and dispersion of nanocrystals
US9359689B2 (en) 2011-10-26 2016-06-07 Pixelligent Technologies, Llc Synthesis, capping and dispersion of nanocrystals
JP6108563B2 (ja) * 2013-02-04 2017-04-05 国立研究開発法人産業技術総合研究所 抵抗体、誘電体等の電子部品用無機材料ペースト及び該無機材料ペーストの製造方法
FI130559B (en) * 2021-06-23 2023-11-21 Turun Yliopisto Semiconductor structure, semiconductor device, and method
CN118039856A (zh) * 2024-02-19 2024-05-14 贵州大学 锂电池用包覆及掺杂改性的高镍正极材料和低温电解液

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US2303330A (en) 1942-02-02 1942-12-01 New Jersey Zinc Co Zinc oxide
DE19907704A1 (de) * 1999-02-23 2000-08-24 Bayer Ag Nanopartikuläres, redispergierbares Fällungszinkoxid
DE10063092A1 (de) 2000-12-18 2002-06-20 Henkel Kgaa Nanoskalige Materialien in Hygiene-Produkten
JP2003073122A (ja) * 2001-09-04 2003-03-12 Mitsui Chemicals Inc 無機微粒子分散液及びそれを用いて製造される複合材料組成物
US7553512B2 (en) 2001-11-02 2009-06-30 Cabot Corporation Method for fabricating an inorganic resistor
JP2004010807A (ja) * 2002-06-10 2004-01-15 Toyo Ink Mfg Co Ltd 水性分散体の製造方法
US20050182153A1 (en) * 2002-06-12 2005-08-18 Koji Yokoi Porous metal oxide material in flake form, method for producing the same and cosmetic, coating material resin composition ink composition and paper comprising the same
JP2004182483A (ja) * 2002-11-29 2004-07-02 Mitsubishi Chemicals Corp 酸化亜鉛超微粒子の製造方法
DE10257388A1 (de) 2002-12-06 2004-06-24 Sustech Gmbh & Co. Kg Nanopartikuläres redispergierbares Zinkoxidpulver
DE10304849A1 (de) * 2003-02-06 2004-08-19 Institut für Neue Materialien gemeinnützige Gesellschaft mit beschränkter Haftung Chemomechanische Herstellung von Funktionskolloiden
WO2004087577A1 (ja) 2003-03-31 2004-10-14 Toto Ltd. 表面改質二酸化チタン微粒子とその分散液、およびその製造方法
JP5014796B2 (ja) * 2004-09-30 2012-08-29 株式会社カネカ ポリマー修飾金属カルコゲン化物ナノ粒子の製造方法
DE102004048230A1 (de) * 2004-10-04 2006-04-06 Institut für Neue Materialien Gemeinnützige GmbH Verfahren zur Herstellung von Nanopartikeln mit maßgeschneiderter Oberflächenchemie und entsprechenden Kolloiden
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KR100768632B1 (ko) * 2006-10-30 2007-10-18 삼성전자주식회사 나노입자의 분산방법 및 이를 이용한 나노입자 박막의제조방법
KR20080108767A (ko) * 2007-06-11 2008-12-16 삼성에스디아이 주식회사 전극 단자부 코팅재 및 이를 구비한 플라즈마 디스플레이패널

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130105165A (ko) * 2012-03-16 2013-09-25 한국전자통신연구원 박막 트랜지스터
KR20230121343A (ko) * 2022-02-11 2023-08-18 한인정밀화학(주) 양자점 조성물, 이로부터 형성된 경화 패턴, 및 이를 포함하는 디스플레이 장치

Also Published As

Publication number Publication date
TW201016614A (en) 2010-05-01
US20110163278A1 (en) 2011-07-07
TWI488815B (zh) 2015-06-21
CN102144004A (zh) 2011-08-03
EP2321373A1 (de) 2011-05-18
WO2010026102A1 (de) 2010-03-11
JP2012501941A (ja) 2012-01-26
US8734899B2 (en) 2014-05-27
JP5599797B2 (ja) 2014-10-01
CN102144004B (zh) 2014-11-26

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