TWI484297B - 感光性接著劑組成物、感光性接著劑膜、其硬化物及使用其的半導體裝置 - Google Patents

感光性接著劑組成物、感光性接著劑膜、其硬化物及使用其的半導體裝置 Download PDF

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TWI484297B
TWI484297B TW100123506A TW100123506A TWI484297B TW I484297 B TWI484297 B TW I484297B TW 100123506 A TW100123506 A TW 100123506A TW 100123506 A TW100123506 A TW 100123506A TW I484297 B TWI484297 B TW I484297B
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Taiwan
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group
photosensitive adhesive
film
adhesive composition
photosensitive
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TW100123506A
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English (en)
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TW201202846A (en
Inventor
Kazuyuki Matsumura
Kanako Tahara
Hiroyuki Niwa
Chikara Inagaki
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Toray Industries
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Publication of TW201202846A publication Critical patent/TW201202846A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
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    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
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    • C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
    • C08G73/1053—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the tetracarboxylic moiety
    • C—CHEMISTRY; METALLURGY
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    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
    • C—CHEMISTRY; METALLURGY
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    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
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    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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Description

感光性接著劑組成物、感光性接著劑膜、其硬化物及 使用其的半導體裝置
本發明是有關於一種感光性接著劑組成物、感光性接著劑膜、其硬化物及使用其的半導體裝置。
近年來，隨著電子零件之高性能化要求，半導體裝置之小型化、動作速度之高速化、高密度配線化不斷發展，提出了與該些對應之各種封裝形態。於半導體封裝中，為了以3維結構積層具有矽通孔之半導體元件或者將半導體元件與支撐基材接著，而且為了形成如影像感測器(image sensor)或微機電系統(microelectromechanical system，MEMS)這樣的具有中空結構的封裝，而使用接著劑。對於該些中所使用的接著劑，要求低應力性、接著性、絕緣可靠性、回焊裂化抗性(solder-reflow crack resistance)，另外，為了使製程簡略化或形成特有結構的封裝，要求可圖案化，亦即感光性。
作為滿足所述眾多特性的接著劑，研究了耐熱性或絕緣性優異之聚醯亞胺系接著劑。特別是作為具有感光性功能的接著劑，例如於日本專利特開2008-239802號公報中提出了使如聚醯胺酸這樣的聚醯亞胺前驅物暫時硬化之技術。而且，於國際公開WO2004/109403號說明書、國際公開WO2007/4569號說明書中提出了以抑制對周邊部件之熱損傷為目的而以已經閉環之聚醯亞胺等為基礎樹脂的材料。於日本專利特開2009-167381中提出了於圖案形成後 低溫貼附性優異的以鹼可溶性聚醯亞胺樹脂為主體的感光性接著劑組成物。
然而，藉由日本專利特開2008-239802號公報、國際公開WO2004/109403號說明書、國際公開WO2007/4569號說明書、日本專利特開2009-167381中所記載之先前的聚醯亞胺系接著劑，難以兼顧曝光後之熱壓接性(thermocompression bondability)與充分之接著性。特別是於如下方面存在問題：對如圖案化之基板這樣的附有凹凸之基板進行曝光後，若於低溫下進行壓接則壓接變得不充分；或者由於回焊等高溫處理而使接著強度降低。若對附有凹凸之基板之於低溫下之熱壓接性不良，則於其後將半導體元件接合於基板上時，於半導體元件與附有凹凸之基板之間產生空隙，變得接著不良而產生作為半導體封裝之可靠性降低之問題。
鑒於該狀況，本發明之課題在於提供一種可藉由鹼性顯影液而進行圖案形成，對曝光後之附有凹凸之基板的低溫下之熱壓接性優異，即使於高溫時亦具有高的接著強度的感光性接著劑組合物。
上述本發明之課題可藉由如下之感光性接著劑組成物而解決，所述感光性接著劑組成物含有(A)鹼可溶性聚醯亞胺，其具有下述通式(1)所表示之結構單元且於主鏈末端之至少一個末端具有通式(2)及/或通式(3)所表示之結構、(B)下述通式(4)或通式(5)所表示之縮水甘 油胺型環氧化合物、(C)光聚合性化合物及(D)光聚合起始劑，且(A)鹼可溶性聚醯亞胺之玻璃轉移溫度為160℃以上，
(於上述通式(1)~通式(3)中，Y表示具有至少一個選自由羧基、酚性羥基、磺酸基及巰基所構成之群組 之基的1價之有機基，Z表示具有至少一個選自由羧基、酚性羥基、磺酸基及巰基所構成之群組之基的2價之有機基；而且，R1 表示4價~14價之有機基，R2 表示2價~12價之有機基，R3 及R4 分別獨立地表示選自由羧基、酚性羥基、磺酸基、及巰基所構成之群組之至少一個基；而且，α及β分別獨立地表示0~10之整數)，
(於上述通式(4)~通式(5)中，R5 ~R20 可分別相同亦可分別不同，為縮水甘油醚基、下述通式(6)所表示之基、氫原子、或碳數為1~5之烷基；其中，於通式(4)中，R5 ~R10 中之至少1個是縮水甘油醚基且至少1個是下述通式(6)所表示之基，或者R5 ~R10 中之至少2個是下述通式(6)所表示之基；而且，於通式(5)中，R11 ~R15 中之至少1個與R16 ~R20 中之至少1個是下述通式(6) 所表示之基；而且，於上述通式(5)中，X表示直接鍵結、碳數為1~6之亞烷基、醚基、硫醚基、磺醯基或亞芳基；亞烷基可為鏈狀亦可為環狀)，
(於上述通式(6)中，R21 是縮水甘油基或碳數為1~5之烷基)。
藉由本發明，可獲得藉由鹼性顯影液而進行圖案形成，對曝光後之附有凹凸之基板的低溫下之熱壓接性優異，即使於高溫時亦具有高的接著強度的感光性接著劑組成物。
本發明之感光性接著劑組成物包含(A)鹼可溶性聚醯亞胺，其具有上述通式(1)所表示之結構單元且於主鏈末端之至少一個末端具有通式(2)及/或通式(3)所表示之結構、(B)上述通式(4)或通式(5)所表示之縮水甘油胺型環氧化合物、(C)光聚合性化合物及(D)光聚合起始劑。
本發明中之感光性接著劑組成物並不限定硬化前之形 狀，例如可列舉清漆狀或膜狀、支撐基材上所塗佈之片狀等。而且，由於該感光性接著劑組成物含有已經閉環之聚醯亞胺，因此無需如含有聚醯亞胺前驅物之接著劑組成物那樣，藉由加熱或適當之觸媒，利用閉環反應將聚醯亞胺前驅物轉換為聚醯亞胺。因此，該感光性接著劑組成物可抑制在接著基板時於基板與接著劑之間所產生之空隙(void)。而且，該感光性接著劑可使於日本專利特開2008-239802號公報之技術中所必須的，對基板熱壓接前於高溫下之加熱處理變得不需要，因此環氧化合物與聚醯亞胺中之鹼可溶性基之硬化反應得到抑制，變得可於低溫下熱壓接於附有凹凸之基板上。另外，由於醯亞胺閉環反應之硬化收縮所產生之壓力較小，因此藉由含有聚醯亞胺前驅物之樹脂組成物亦可容易地形成厚膜。
本發明中之(A)鹼可溶性聚醯亞胺為了於鹼性水溶液中顯影，較理想的是具有鹼可溶性官能基。所謂鹼可溶性官能基是指具有酸性之官能基，具體而言可列舉酚性羥基、羧基、磺酸基等。此處所謂之鹼可溶性是指對於四甲基氫氧化銨之2.38%水溶液100g而言，於25℃下溶解0.1g以上。於上述鹼可溶性基中，自感光性接著劑組成物之保存穩定性、或對為導體之銅配線之腐蝕等問題考慮，較佳的是鹼可溶性基為酚性羥基。於聚醯亞胺中之鹼可溶性基之導入，可藉由使二胺、四羧酸二酐、或封端劑具有鹼可溶性基而進行。另外，於聚醯亞胺之醯亞胺化率不足100%之情形時，殘留有源自四羧酸二酐之羧基，但該羧基 並不包含於此處所提及之鹼可溶性基中。
本發明中之(A)鹼可溶性聚醯亞胺具有下述通式(1)之結構單元，且於主鏈末端之至少一個末端具有通式(2)及/或通式(3)之結構。
於式中，Y表示具有至少一個選自由羧基、酚性羥基、 磺酸基及巰基所構成之群組之基的1價之有機基，Z表示具有至少一個選自由羧基、酚性羥基、磺酸基及巰基所構成之群組之基的2價之有機基。Y較佳的是芳香族基，Z較佳的是芳香族基或具有碳-碳雙鍵之基。作為Y及Z，其中較佳的是具有酚性羥基或巰基。
而且，R1 表示4價~14價之有機基，R2 表示2價~12價之有機基，R3 及R4 分別獨立地表示選自由羧基、酚性羥基、磺酸基、及巰基所構成之群組之至少一個基。而且，α及β分別獨立地表示0~10之整數。
於本發明中，(A)鹼可溶性聚醯亞胺之重量平均分子量較佳的是10,000以上100,000以下。於可溶性聚醯亞胺包含2種以上之情形時，其中至少1種之重量平均分子量為上述範圍即可。若重量平均分子量為10,000以上，則硬化膜之機械強度提高，接著強度變高。另一方面，如果重量平均分子量為100,000以下，則抑制在鹼性水溶液中產生顯影殘渣。另外，自顯影性提高之方面考慮，較佳的是50,000以下。另外，本發明中之重量平均分子量可藉由凝膠滲透層析法(GPC法)而測定，藉由聚苯乙烯換算而算出。
本發明之(A)鹼可溶性聚醯亞胺之玻璃轉移溫度(Tg)為160℃以上。Tg更佳的是180℃以上，進一步更佳的是200℃以上。若Tg為該範圍，則高溫時之接著強度變高。另外，本發明中之Tg是藉由示差掃描熱量測定法(DSC法)而測定的，將對聚醯亞胺粉體進行測定時之熱量變化 曲線微分而所得的曲線顯示最大值時的溫度作為Tg。
(A)鹼可溶性聚醯亞胺可藉由四羧酸二酐與二胺之反應而獲得。
於通式(1)中，R1 為四羧酸二酐之殘基。R1 較佳的是含有芳香族基或環狀脂肪族基之碳原子數為8~40之有機基。
四羧酸二酐具體而言可列舉：苯均四酸二酐(pyromellitic dianhydride)、3,3',4,4'-聯苯四甲酸二酐(tetracarboxylic dianhydride)、2,3,3',4'-聯苯四甲酸二酐、2,2',3,3'-聯苯四甲酸二酐、3,3',4,4'-二苯甲酮四甲酸二酐、2,2',3,3'-二苯甲酮四甲酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、雙(3,4-二羧基苯基)甲烷二酐、雙(2,3-二羧基苯基)甲烷二酐、雙(3,4-二羧基苯基)碸二酐、雙(3,4-二羧基苯基)醚二酐、1,2,5,6-萘四甲酸二酐、9,9-雙(3,4-二羧基苯基)芴酸二酐(fluorenic acid dianhydride)、9,9-雙{4-(3,4-二羧基苯氧基)苯基}芴酸二酐、2,3,6,7-萘四甲酸二酐(2,3,6,7-naphthalene tetracarboxylic acid dianhydride)、2,3,5,6-吡啶四甲酸二酐(2,3,5,6-pyridinetetracarboxylic dianhydride)、3,4,9,10-苝四甲酸二酐(3,4,9,10-perylenetetracarboxylic dianhydride)、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐等芳香族四羧酸二酐，或丁烷四甲酸二酐、1,2,3,4-環戊烷四甲酸二酐等脂肪族四羧酸二酐，亦即如下述所示之結構的酸二 酐等。該些化合物可單獨使用或者將2種以上組合使用。
此處，R22 表示選自氧原子、C(CF3 )2 、C(CH3 )2 、CO、COO及SO2 之基，R23 及R24 分別表示選自氫原子、羥基及巰基之基。
於通式(1)中，R2 為二胺之殘基。R2 較佳的是含有芳香族基或環狀脂肪族基之碳原子數為5~40之有機基。
二胺之具體例可列舉3,3'-二胺基二苯醚、3,4'-二胺基二苯醚、4,4'-二胺基二苯醚、3,3'-二胺基二苯基甲烷、3,4'-二胺基二苯基甲烷、4,4'-二胺基二苯基甲烷、3,3'-二胺基二苯基碸、3,4'-二胺基二苯基碸、4,4'-二胺基二苯基碸、3,4'-二胺基二苯基硫醚、4,4'-二胺基二苯基硫醚、1,4-雙(4-胺基苯氧基)苯、1,3-雙(4-胺基苯氧基)苯、1,3-雙(3-胺基苯氧基)苯、聯苯胺、間苯二胺、對苯二胺、1,5-萘二胺、2,6-萘二胺、雙(4-胺基苯氧基苯基)碸、雙(3-胺基苯氧基苯基)碸、雙(4-胺基苯氧基)聯苯、雙{4-(4-胺基苯氧基)苯基}醚、1,4-雙(4-胺基苯氧基)苯、2,2'-二甲基-4,4'-二胺基聯苯、2,2'-二乙基-4,4'-二胺基聯苯、3,3'-二甲基-4,4'-二胺基聯苯、3,3'-二乙基-4,4'-二胺基聯苯、2,2',3,3'-四甲基-4,4'-二胺基聯苯、3,3',4,4'-四甲基-4,4'-二胺基聯苯、2,2'-二(三氟甲基)-4,4'-二胺基聯苯、9,9-雙(4-胺基苯基)茀或該些芳香族 環被烷基或鹵素原子取代而成之化合物，或者脂肪族之環己基二胺、亞甲基雙環己基胺及如下述所示之結構之二胺等。該些化合物可單獨使用或者將2種以上組合使用。
此處，R25 表示選自氧原子、C(CF3 )2 、C(CH3 )2 、CO、COO及SO2 之基，R26 ~R29 分別表示選自羥基及巰基之基。
該些化合物中，較佳的是3,3'-二胺基二苯醚、3,4'-二胺基二苯醚、4,4'-二胺基二苯醚、3,3'-二胺基二苯基甲烷、3,4'-二胺基二苯基甲烷、4,4'-二胺基二苯基甲烷、3,3'-二胺基二苯基碸、3,4'-二胺二苯基碸、4,4'-二胺基二苯基碸、3,4'-二胺基二苯基硫醚、4,4'-二胺基二苯基硫醚、間苯二胺、對苯二胺、1,4-雙(4-胺基苯氧基)苯、9,9-雙(4-胺基苯基)茀及如下述所示之結構的二胺等。
此處，R25 表示選自氧原子、C(CF3 )2 、C(CH3 )2 及SO2 之基，R26 ~R29 分別表示選自羥基及巰基之基。
另外，為了使與基板之接著性提高，可於不使耐熱性降低之範圍內共聚具有矽氧烷結構之二胺。具體而言可列舉：共聚1mol%~10mol%之雙(3-胺基丙基)四甲基二矽氧烷、雙(對胺基苯基)八甲基五矽氧烷等而成者等。
本發明中所使用之(A)鹼可溶性聚醯亞胺的主鏈末端之至少一部分可以被一級單胺或二羧酸酐所封端。藉由該封端劑，可將鹼可溶性聚醯亞胺之重量平均分子量調整為適宜之範圍。另外，自使鹼可溶性提高之方面考慮，封端劑具有鹼可溶性基。
於通式(2)中，Y源自作為封端劑之一級單胺。作為封端劑之具體例，一級單胺較佳的是5-胺基-8-羥基喹啉、1-羥基-7-萘胺、1-羥基-6-萘胺、1-羥基-5-萘胺、1-羥基-4-萘胺、2-羥基-7-萘胺、2-羥基-6-萘胺、2-羥基-5-萘胺、1-羧基-7-萘胺、1-羧基-6-萘胺、1-羧基-5-萘胺、2-羧基-7-萘胺、2-羧基-6-萘胺、2-羧基-5-萘胺、2-胺基苯甲酸、3-胺基苯甲酸、4-胺基苯甲酸、4-胺基水楊酸、5-胺基水楊酸、6-胺基水楊酸、2-胺基苯磺酸、3-胺基苯磺酸、4-胺基 苯磺酸、3-胺基-4,6-二羥基嘧啶、2-胺基苯酚、3-胺基苯酚、4-胺基苯酚、2-胺基苯硫酚、3-胺基苯硫酚、4-胺基苯硫酚等。
而且，於通式(3)中，Z源自作為封端劑之二羧酸酐。二羧酸酐較佳的是4-羧基鄰苯二甲酸酐(4-carboxyphthalic anhydride)、3-羥基鄰苯二甲酸酐(4-hydroxyphthalic anhydride)、順烏頭酸酐(cis-aconitic anhydride)等。該些化合物可單獨使用或者將2種以上組合使用。
本發明中所使用之(A)鹼可溶性聚醯亞胺可將二胺之一部分替換為作為封端劑之一級單胺，或者將四羧酸二酐替換為作為封端劑之二羧酸酐，藉由公知之方法而合成。例如可利用如下方法而獲得聚醯亞胺前驅物：於低溫中使四羧酸二酐與二胺化合物與單胺反應之方法；於低溫中使四羧酸二酐與二羧酸酐與二胺化合物反應之方法；藉由四羧酸二酐與醇而獲得二酯，其後於縮合劑之存在下與二胺及單胺進行反應之方法等。其後，可利用公知之醯亞胺化反應法而合成聚醯亞胺。
於使用具有通式(1)所表示之結構單元之化合物而作為本發明中所使用之(A)鹼可溶性聚醯亞胺之情形時，該聚醯亞胺可為僅由通式(1)所表示之結構單元所構成之化合物，亦可為與其他結構單元之共聚物。此時，較佳的是含有聚醯亞胺整體之50mol%以上之通式(1)所表示之結構單元。較佳的是於不損及藉由最終加熱處理而所得之聚醯亞胺之耐熱性的範圍內選擇在共聚或混合中所使用之 結構單元之種類及量。
而且，(A)鹼可溶性聚醯亞胺之醯亞胺化率例如可藉由以下之方法而容易地求出。此處，所謂醯亞胺化率是表示於如上所述那樣經由聚醯亞胺前驅物而合成聚醯亞胺時，聚醯亞胺前驅物中有多少莫耳百分比(mol%)被轉換為聚醯亞胺。首先，測定聚合物之紅外線吸收光譜，確認起因於聚醯亞胺之醯亞胺結構的吸收峰值(1,780cm-1 附近、1,377cm-1 附近)之存在。其次，於350℃下對該聚合物進行1小時之熱處理後，再次測定紅外線吸收光譜，比較熱處理前與熱處理後之1,377cm-1 附近之峰值強度。將熱處理後之聚合物之醯亞胺化率設為100%，求出熱處理前之聚合物之醯亞胺化率。較佳的是聚合物之醯亞胺化率為90%以上。
於(A)成分之鹼可溶性聚醯亞胺中所導入之封端劑可藉由以下之方法而檢測。例如，將導入有封端劑之聚醯亞胺溶解於酸性溶液中，分解為作為聚醯亞胺之結構單元的胺成分與羧酸酐成分，藉由氣相層析法(GC)或NMR對其進行測定。亦可與其不同地，直接使用熱裂解氣相層析儀(PGC)或紅外線光譜及13 CNMR光譜測定導入有封端劑之聚醯亞胺而進行檢測。
本發明之感光性接著劑組成物含有(B)下述通式(4)或通式(5)之任意通式所表示之縮水甘油胺型環氧化合物。
於上述通式(4)~通式(5)中，R5 ~R20 可分別相同亦可分別不同，為縮水甘油醚基、下述通式(6)所表示之基、氫原子、或碳數為1~5之烷基。其中，於通式(4)中，R5 ~R10 中之至少1個是縮水甘油醚基且至少1個是下述通式(6)所表示之基，或者R5 ~R10 中之至少2個是下述通式(6)所表示之基。而且，於通式(5)中，R11 ~R15 中之至少1個與R16 ~R20 中之至少1個是下述通式(6)所表示之基。而且，於上述通式(5)中，X表示直接鍵結、碳數為1~6之亞烷基、醚基、硫醚基、磺醯基或亞芳基。亞烷基可為鏈狀亦可為環狀。
於上述通式(6)中，R21 為縮水甘油基或碳數為1~5之烷基。
(B)縮水甘油胺型環氧化合物由於與(A)鹼可溶性聚醯亞胺之相溶性良好，可於將本發明之感光性接著劑組成物製成乾膜(dry film)時而抑制於薄膜上產生裂痕。而且，對於鹼性水溶液之顯影性提高。而且，由於具有2個以上環氧基，於硬化時產生與聚醯亞胺之交聯反應。由此可提高硬化膜之耐熱性，即使於高溫時亦表現出充分之接著強度。而且，由於含有上述(B)縮水甘油胺型環氧化合物，曝光後之感光性接著劑組成物覆膜對附有凹凸之基板之於低溫下之熱壓接性變良好。於(A)鹼可溶性聚醯亞胺之Tg大之情形時，通常存在損及其熱壓接性之傾向，但於本發明中由於(B)成分之存在而使該熱壓接性良好。由此可兼顧曝光後之熱壓接性與高溫時之接著性。
(B)縮水甘油胺型環氧化合物於使高溫時之接著強度提高之方面而言，較佳的是於上述通式(6)中，R21 為縮水甘油基。
(B)縮水甘油胺型環氧化合物例如可列舉N,N-雙(2,3-環氧丙基)-4-(2,3-環氧丙氧基)苯胺、N,N,N',N'-四(2,3-環氧丙基)-1,4-苯二胺、N,N,N',N'-四(環氧乙烷-2-基甲基)-4,4'-亞甲基二苯胺、jER-630、jER-630LSD、jER-604(商品名、三菱化學股份有限公司製造)、Adeka Resin EP-3900S(ADEKA有限公司製造、“Adeka Resin EP”：註冊商標)、YH-434、YH-434L(商品名、新日鐵化學股份 有限公司製造)等。該些化合物可單獨使用或者將2種以上組合使用。
(B)縮水甘油胺型環氧化合物之含量相對於(A)鹼可溶性聚醯亞胺100重量份而言，自於室溫下表現出充分之接著強度之方面考慮較佳的是10重量份以上，自抑制於製成乾膜時之裂痕之方面考慮更佳的是25重量份以上。而且，自可抑制乾膜之黏性之方面而言較佳的是150重量份以下，自使高溫時之接著強度提高之方面而言更佳的是120重量份以下。
本發明之感光性接著劑組成物含有(C)光聚合性化合物。光聚合性化合物是具有聚合性基之化合物。聚合性基例如可列舉乙烯基、烯丙基、丙烯醯基、甲基丙烯醯基等不飽和雙鍵官能基及/或丙炔基等不飽和三鍵官能基，於該些基中，共軛型之乙烯基或丙烯醯基、甲基丙烯醯基於聚合性之方面較佳。而且，若聚合反應之交聯點多，則存在於圖案上產生裂痕之現象，因此較佳的是聚合性基之數為1~6。另外，聚合性基亦可並非均為相同之基，亦可將上述基組合使用。
(C)光聚合性化合物例如可列舉：二乙二醇二丙烯酸酯、三乙二醇二丙烯酸酯、四乙二醇二丙烯酸酯、二乙二醇二甲基丙烯酸酯、三乙二醇二甲基丙烯酸酯、四乙二醇二甲基丙烯酸酯、三羥甲基丙烷二丙烯酸酯(trimethylolpropane diacrylate)、三羥甲基丙烷三丙烯酸酯(trimethylolpropane triacrylate)、三羥甲基丙烷二甲基 丙烯酸脂、三羥甲基丙烷三甲基丙烯酸酯、苯乙烯、α-甲基苯乙烯、1,2-二氫萘、1,3-二異丙烯基苯、3-甲基苯乙烯、4-甲基苯乙烯、2-乙烯基萘、丙烯酸丁酯、甲基丙烯酸丁酯、丙烯酸異丁酯、丙烯酸己酯、丙烯酸異辛酯、丙烯酸異冰片基酯、甲基丙烯酸異冰片基酯、甲基丙烯酸環己酯、1,3-丁二醇二丙烯酸酯、1,3-丁二醇二甲基丙烯酸脂、新戊二醇二丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,4-丁二醇二甲基丙烯酸脂、1,6-己二醇二丙烯酸酯、1,6-己二醇二甲基丙烯酸脂、1,9-壬二醇二甲基丙烯酸脂、1,10-癸二醇二甲基丙烯酸脂、二羥甲基-三環癸烷二丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇六丙烯酸酯、二季戊四醇六甲基丙烯酸酯、丙烯酸-2-羥基乙酯、甲基丙烯酸-2-羥基乙酯、1,3-二丙烯醯氧基-2-羥基丙烷、1,3-二甲基丙烯醯氧基-2-羥基丙烷、亞甲雙丙烯醯胺、N,N-二甲基丙烯醯胺、N-羥甲基丙烯醯胺、2,2,6,6-四甲基哌啶基甲基丙烯酸酯、2,2,6,6-四甲基哌啶基丙烯酸酯、N-甲基-2,2,6,6-四甲基哌啶基甲基丙烯酸酯、N-甲基-2,2,6,6-四甲基哌啶基丙烯酸酯、環氧乙烷改性雙酚A二丙烯酸酯、環氧乙烷改性雙酚A二甲基丙烯酸脂、環氧丙烷改性雙酚A二丙烯酸酯、環氧丙烷改性雙酚A甲基丙烯酸酯、丙氧基化乙氧基化雙酚A二丙烯酸酯、丙氧基化乙氧基化雙酚A二甲基丙烯酸脂、N-乙烯基吡咯啶酮、N-乙烯基己內醯胺等。該些化合物可單獨使用或者將2種以上組合使用。
該些化合物中特佳的是列舉：1,9-壬二醇二甲基丙烯酸脂、1,10-癸二醇二甲基丙烯酸脂、二羥甲基-三環癸烷二丙烯酸酯、丙烯酸異冰片基酯、甲基丙烯酸異冰片基酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇六丙烯酸酯、二季戊四醇六甲基丙烯酸酯、亞甲雙丙烯醯胺、N,N-二甲基丙烯醯胺、N-羥甲基丙烯醯胺、2,2,6,6-四甲基哌啶基甲基丙烯酸酯、2,2,6,6-四甲基哌啶基丙烯酸酯、N-甲基-2,2,6,6-四甲基哌啶基甲基丙烯酸酯、N-甲基-2,2,6,6-四甲基哌啶基丙烯酸酯、環氧乙烷改性雙酚A二丙烯酸酯、環氧乙烷改性雙酚A二甲基丙烯酸脂、環氧丙烷改性雙酚A二丙烯酸酯、環氧丙烷改性雙酚A甲基丙烯酸酯、丙氧基化乙氧基化雙酚A二丙烯酸酯、丙氧基化乙氧基化雙酚A二甲基丙烯酸脂、N-乙烯基吡咯啶酮、N-乙烯基己內醯胺等。
(C)光聚合性化合物之含量相對於(A)鹼可溶性聚醯亞胺100重量份而言，自於顯影後獲得充分之殘膜之方面考慮，較佳的是40重量份以上，更佳的是50重量份以上。另一方面，自提高硬化膜之耐熱性之方面考慮，較佳的是150重量份以下，更佳的是100重量份以下。
本發明之感光性接著劑組成物含有(D)光聚合起始劑。(D)光聚合起始劑例如可列舉二苯甲酮、米其勒酮(Michler's ketone)、4,4-雙(二乙基胺基)二苯甲酮、3,3,4,4-四(第三丁基過氧基羰基)二苯甲酮等二苯甲酮類，3,5-雙 (二乙基胺基苯亞甲基)-N-甲基-4-哌啶酮、3,5-雙(二乙基胺基苯亞甲基)-N-乙基-4-哌啶酮等苯亞甲基類，7-二乙基胺基-3-壬基香豆素、4,6-二甲基-3-乙基胺基香豆素、3,3-羰基雙(7-二乙基胺基香豆素)、7-二乙基胺基-3-(1-甲基苯并咪唑基)香豆素、3-(2-苯并噻唑基)-7-二乙基胺基香豆素等香豆素類，2-第三丁基蒽醌、2-乙基蒽醌、1,2-苯并蒽醌等蒽醌類，安息香甲醚、安息香乙醚、安息香異丙醚等安息香類，2,4-二甲基噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮、2-異丙基噻噸酮等噻噸酮類，乙二醇二(3-巰基丙酸酯)、2-巰基苯并噻唑、2-巰基苯并噁唑、2-巰基苯并咪唑等巰基類，N-苯基甘胺酸、N-甲基-N-苯基甘胺酸、N-乙基-N-(對氯苯基)甘胺酸、N-(4-氰基苯基)甘胺酸等甘胺酸類，1-苯基-1,2-丁二酮-2-(鄰甲氧基羰基)肟、1-苯基-1,2-丙二酮-2-(鄰甲氧基羰基)肟、1-苯基-1,2-丙二酮-2-(鄰乙氧基羰基)肟、1-苯基-1,2-丙二酮-2-(鄰苯甲醯基)肟、間二苯甲醯雙(α-異亞硝基苯丙酮肟)、1,2-辛二酮-1-[4-(苯基硫基)苯基]-2-(鄰苯甲醯肟)等肟類，2-苄基-2-二甲基胺基-1-(4-嗎啉代苯基)-丁-1-酮、2-甲基-1-[4-(甲基硫基)苯基]-2-嗎啉代丙-1-酮等α-胺基烷基苯酮類，2,2'-雙(鄰氯苯基)-4,4',5,5'-四苯基聯咪唑等。該些化合物中，於光反應之方面而言較為適宜的是選自上述二苯甲酮類、甘胺酸類、巰基類、肟類、α-胺基烷基苯酮類及2,2'-雙(鄰氯苯基)-4,4',5,5'-四苯基聯咪唑之化合物的組合。該些光聚合起始劑可單獨使用或將兩種以上組合使用。更佳的是肟類， 特佳的是選自1-苯基-1,2-丙二酮-2-(鄰乙氧基羰基)肟、1-苯基-1,2-丙二酮-2-(鄰苯甲醯基)肟、間二苯甲醯雙(α-異亞硝基苯丙酮肟)、OXEO1、OXEO2(商品名、汽巴精化股份有限公司製造)、N-1919及NCI-831(商品名、ADEKA股份有限公司製造)之化合物。
(D)光聚合起始劑之含量相對於(A)鹼可溶性聚醯亞胺100重量份而言較佳的是0.1重量份~40重量份。於組合使用兩種以上光聚合起始劑之情形時，較佳的是其總量為該範圍。若(D)光聚合起始劑之含量為0.1重量份以上，則曝光時之聚合性化合物之聚合反應充分進行。而且，若(D)光聚合起始劑之含量為40重量份以下，則即使是厚膜亦可保持充分之透光度，且可進行圖案形成。而且，該含量之最佳範圍可根據所選擇之光聚合起始劑之種類，於上述範圍中適宜選擇。
較佳的是本發明之感光性接著劑組成物更含有(E)具有芳香族基且並不具有縮水甘油基胺基之液狀環氧化合物。由於(E)具有芳香族基，因此於感光性接著劑組成物中芳香環相互作用，從而使高溫時之接著強度變高。而且，由於(E)於室溫下為液狀，因此可以不損及於鹼性水溶液中之顯影性地進一步調整(E)對於鹼性水溶液之溶解性，從而變得可控制感光性接著劑組成物之殘膜率或圖案形狀之類的圖案加工性。另外，於本發明中，所謂液狀環氧化合物是表示於室溫下為液狀之環氧化合物。
(E)具有芳香族基且並不具有縮水甘油基胺基之液 狀環氧化合物可列舉雙酚A型縮水甘油醚環氧樹脂或雙酚F型縮水甘油醚環氧樹脂等。(E)成分具體可列舉850-S、830-S(商品名、DIC股份有限公司製造)、EP-4000S、EP-4000L、EP-4003S、EP-4010S(商品名、ADEKA股份有限公司製造)、jER-828US、jER-YL983U(商品名、三菱化學股份有限公司製造)等。
本發明之感光性接著劑組成物亦可視需要以提高感光性接著劑組成物與基板之密接性為目的而含有界面活性劑。
本發明之感光性接著劑組成物可含有無機粒子。藉由含有無機粒子，可形成順楔形(forward tapered shape)或矩形狀之圖案。而且，具有抑制在製成感光性樹脂組成物膜時之黏著性的效果。另外，具有使硬化膜之耐化學品性、耐熱性、耐濕性等特性提高之效果。
本發明中所使用之無機粒子之平均粒徑較佳的是20nm以上1μm以下。感光性樹脂組成物中之無機粒子存在有：處於凝聚完全鬆散(loose)之1次粒子之狀態的無機粒子、處於多個1次粒子凝聚之狀態的無機粒子。此處，所謂無機粒子之粒徑，未凝聚之1次粒子是該粒子之粒徑，1次粒子凝聚而成之粒子是指構成該凝聚體之1次粒子之粒徑。測定感光性樹脂組成物中之無機粒子之平均粒徑的方法可列舉藉由SEM(掃描式電子顯微鏡)或TEM(穿透式電子顯微鏡)而直接觀察粒子，計算粒徑之平均的方法。若(c)無機粒子之平均粒徑為20nm以上，則相 對於粒子體積之比表面積變小，因此粒子之分散性提高，另外塗佈後之表面之凹凸或針孔得到抑制，可使製作感光性樹脂組成物膜時之塗佈性提高。另一方面，若平均粒徑為1μm以下，則無機粒子於感光性樹脂組成物溶液中之沈降得到抑制，另外塗佈後之表面之凹凸或針孔得到抑制，可使製作感光性樹脂組成物膜時之塗佈性提高。而且，自提高硬化膜之耐化學品性之方面考慮，更佳的是0.5μm以下，進一步更佳的是0.1μm以下。
無機粒子例如可列舉滑石、煅燒黏土、未煅燒黏土、雲母、玻璃等矽酸鹽，二氧化鈦、氧化鋁、二氧化矽等氧化物，碳酸鈣、碳酸鎂等碳酸鹽，氫氧化鋁、氫氧化鎂、氫氧化鈣等氫氧化物，硫酸鋇、硫酸鈣、亞硫酸鈣等硫酸鹽或亞硫酸鹽，硼酸鋅、偏硼酸鋇、硼酸鋁、硼酸鈣、硼酸鈉等硼酸鹽，氮化鋁、氮化硼、氮化矽等氮化物等。該些無機粒子亦可含有多種，但自可靠性、成本之方面考慮，較佳的是二氧化矽、二氧化鈦。該些無機粒子為了改善分散性、沈降性，更佳的是藉由矽烷偶合劑等實施了表面處理者。矽烷偶合劑若為與感光性樹脂組成物膜之樹脂成分的相溶性良好者即可，較佳的是乙烯系、甲基丙烯酸系、丙烯酸系、環氧系或胺基系矽烷偶合劑，自對感光性樹脂組成物膜進行加熱硬化時，樹脂與無機粒子共價鍵結之方面考慮，更佳的是乙烯系、甲基丙烯酸系、丙烯酸系或環氧系。
而且，為了提高與矽晶圓等基底基板之接著性，亦可 含有矽烷偶合劑、鈦螯合劑等。
另外，本發明之感光性樹脂組成物亦可視需要含有交聯劑、交聯促進劑、增感劑、溶解調整劑、穩定劑、消泡劑等。
其次，對使用本發明之感光性接著劑組成物而製作感光性接著劑膜之方法加以說明。本發明之感光性接著劑膜是將感光性接著劑組成物之溶液(清漆)塗佈於支撐體上，其次視需要對其進行乾燥而獲得。感光性接著劑組成物清漆可藉由於感光性接著劑組成物中添加有機溶劑而獲得。此處所使用之有機溶劑若為可溶解感光性接著劑組成物之有機溶劑即可。
有機溶劑具體可列舉乙二醇單甲醚、乙二醇單乙醚、丙二醇單甲醚、丙二醇單乙醚、乙二醇二甲醚、乙二醇二乙醚、乙二醇二丁醚等醚類，乙二醇單乙醚乙酸酯、丙二醇單甲醚乙酸酯、乙酸丙酯、乙酸丁酯、乙酸異丁酯、乙酸-3-甲氧基丁酯、乙酸-3-甲基-3-甲氧基丁酯、乳酸甲酯、乳酸乙酯、乳酸丁酯等乙酸酯類，丙酮、丁酮、乙醯丙酮、甲基丙基酮、甲基丁基酮、甲基異丁基酮、環戊酮、2-庚酮等酮類，丁醇、異丁醇、戊醇、4-甲基-2-戊醇、3-甲基-2-丁醇、3-甲基-3-甲氧基丁醇、二丙酮醇等醇類，甲苯、二甲苯等芳香族烴類，另外N-甲基-2-吡咯啶酮、N-環己基-2-吡咯啶酮、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、二甲基亞碸、γ-丁內酯等。
而且，亦可使用濾紙或過濾器對感光性接著劑組成物 清漆進行過濾。過濾方法並無特別限定，較佳的是使用保留粒徑為0.4μm~10μm之過濾器，藉由加壓過濾而進行過濾之方法。
本發明之感光性接著劑膜較佳的是形成於支撐體上而使用。支撐體並無特別之限定，可使用聚對苯二甲酸乙二酯(PET)膜、聚苯硫醚膜、聚醯亞胺膜等通常市售之各種膜。於支撐體與感光性接著劑膜之接合面，為了使密接性與剝離性提高，亦可實施聚矽氧、矽烷偶合劑、鋁螯合劑、聚脲等之表面處理。而且，支撐體之厚度並無特別限定，自作業性之觀點考慮，較佳的是10μm~100μm之範圍。
而且，本發明之感光性接著劑膜為了保護表面，亦可於膜上具有保護膜。由此，可保護感光性接著劑膜表面免受大氣中之髒物或塵埃等污染物質之污染。
保護膜可列舉聚烯烴膜、聚酯膜等。保護膜較佳的是與感光性接著劑膜之接著力小的保護膜。
將感光性接著劑組成物清漆塗佈於支撐體上之方法可列舉使用旋轉器之旋塗、噴塗、輥塗(roll coating)、絲網印刷、刮刀塗佈機、模塗、壓光塗佈、液面彎曲式塗佈(meniscus coater)、棒式塗佈、輥塗機(roll coater)、刮刀式輥塗機、凹板印刷塗佈、絲網塗佈、縫隙模塗佈等方法。而且，塗佈膜厚因塗佈方法、組成物之固形物濃度、黏度等而異，通常較佳的是乾燥後的膜厚為0.5μm以上100μm以下。
於乾燥中可使用烘箱(oven)、加熱板(hot plate)、紅外線等。乾燥溫度及乾燥時間若為可使有機溶劑揮發之範圍即可，較佳的是適宜設定為感光性接著劑膜成為未硬化或半硬化狀態之範圍。具體而言，較佳的是於40℃~120℃之範圍內進行1分鐘至數十分鐘。而且，亦可將該些溫度加以組合而階段性地進行升溫，例如亦可於70℃、80℃、90℃下進行各1分鐘之熱處理。
其次，舉例說明對本發明之感光性接著劑組成物或使用有所述感光性接著劑組成物的感光性接著劑膜進行圖案加工的方法、以及熱壓接於其他部件上之方法。
首先，對使用本發明之感光性接著劑組成物清漆或使用有所述感光性接著劑組成物清漆的感光性接著劑膜，於基板上形成感光性接著劑組成物覆膜之方法加以說明。於使用感光性接著劑組成物清漆之情形時，首先將清漆塗佈於基板上。塗佈方法可列舉使用旋轉器之旋塗、噴塗、輥塗、絲網印刷等方法。而且，塗佈膜厚因塗佈方法、樹脂組成物之固形物濃度及黏度等而異，通常較佳的是以乾燥後之膜厚成為0.5μm以上100μm以下之方式進行塗佈。其次，對塗佈有感光性接著劑組成物清漆之基板加以乾燥，獲得感光性接著劑組成物覆膜。乾燥可使用烘箱、加熱板、紅外線等。乾燥溫度及乾燥時間為可使有機溶劑揮發之範圍即可，較佳的是適宜設定為感光性接著劑組成物覆膜成為未硬化或半硬化狀態之範圍。具體而言，較佳的是於50℃~150℃之範圍內進行1分鐘至數小時。
另一方面，於使用感光性接著劑膜之情形時，於具有保護膜之情形時將該保護膜剝離，使感光性接著劑膜與基板對向，藉由熱壓接而進行貼合，獲得感光性接著劑組成物覆膜。熱壓接可藉由熱壓處理、熱貼合處理、熱真空貼合處理等而進行。自於基板上之密接性、埋設性之方面考慮，貼合溫度較佳的是40℃以上。而且，為了防止於貼合時感光性接著劑膜硬化，從而造成曝光、顯影步驟中之圖案形成之解像度變差，貼合溫度較佳的是150℃以下。
於任意之情形時，所使用之基板可列舉矽晶圓、陶瓷類、砷化鎵、有機系電路基板、無機系電路基板、及於該些基板上配置有電路之構成材料的基板等，但並不限定於該些基板。有機系電路基板之例可列舉：玻璃布/環氧覆銅積層板等玻璃基材覆銅積層板，玻璃不織布/環氧覆銅積層板等複合覆銅積層板，聚醚醯亞胺樹脂基板、聚醚酮樹脂基板、聚碸系樹脂基板等耐熱、熱塑性基板，聚酯覆銅薄膜基板、聚醯亞胺覆銅薄膜基板等可撓性基板。而且，無機系電路基板之例可列舉：氧化鋁基板、氮化鋁基板、碳化矽基板等陶瓷基板，鋁基底基板、鉄基底基板等金屬系基板。電路之構成材料之例可列舉：含有銀、金、銅等金屬之導體，含有無機系氧化物等之電阻，含有玻璃系材料及/或樹脂等之低介電體，含有樹脂或高介電常數無機粒子等之高介電體，含有玻璃系材料等之絕緣體等。
其次，於藉由上述方法而形成之感光性接著劑組成物覆膜上，通過具有所期望之圖案的遮罩而照射光化射線 (chemical ray)，進行曝光。曝光中所使用之光化射線有紫外線、可見光線、電子束、X射線等，於本發明中較佳的是使用水銀燈之i線(365nm)、h線(405nm)、g線(436nm)。於感光性接著劑膜中，支撐體相對於該些光線而言為透明之材質之情形時，亦可並不將支撐體自感光性接著劑膜上剝離地進行曝光。
於形成圖案時，於曝光後使用顯影液而將未曝光部除去。顯影液較佳的是氫氧四甲基銨之水溶液、二乙醇胺、二乙基胺基乙醇、氫氧化鈉、氫氧化鉀、碳酸鈉、碳酸鉀、三乙胺、二乙胺、甲胺、二甲胺、乙酸二甲基胺基乙酯、二甲基胺乙醇、甲基丙烯酸二甲基胺基乙酯、環己胺、乙二胺、己二胺等顯示出鹼性之化合物之水溶液。而且，於該些鹼性水溶液中亦可視情況單獨含有如下之化合物或者組合含有數種如下之化合物：N-甲基-2-吡咯啶酮、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、二甲基亞碸、γ-丁內酯、二甲基丙烯醯胺等極性溶劑，甲醇、乙醇、異丙醇等醇類，乳酸乙酯、丙二醇單甲醚乙酸酯等酯類，環戊酮、環己酮、異丁酮、甲基異丁基酮等酮類等。
顯影可藉由如下方法而進行：將上述顯影液噴射於覆膜面上，浸漬於顯影液中，或者一面浸漬一面施加超音波，一面使基板旋轉一面噴射顯影液等。顯影時之條件(是指顯影時間或者顯影步驟顯影液之溫度等)若為將未曝光部除去之條件即可，為了加工微細圖案、將圖案間之殘渣除去，較佳的是除去未曝光部後進一步進行顯影。
顯影後亦可藉由水進行沖洗處理。此處亦可將乙醇、異丙醇等醇類，乳酸乙酯、丙二醇單甲醚乙酸酯等酯類等添加於水中而進行沖洗處理。
於顯影時之圖案解像度增大，顯影條件之許可範圍增大之情形時，亦可於顯影前引入進行烘烤處理之步驟。該溫度較佳的是50℃~180℃之範圍，特佳的是60℃~120℃之範圍。時間較佳的是5秒~數小時。
於圖案形成後，自減低在感光性接著劑組成物覆膜中殘存的溶劑、揮發成分、水之觀點考慮，較佳的是於60℃~200℃之範圍內進行加熱乾燥。時間較佳的是1分鐘~數小時。
將如此而所得的形成有進行了圖案化加工的感光性接著劑組成物覆膜的基板熱壓接於基板或其他部件上。熱壓接溫度較佳的是60℃~400℃之溫度範圍。而且，壓接時之壓力較佳的是0.01MPa~10MPa之範圍。時間較佳的是1秒~數分鐘。
於熱壓接後，施以120℃~400℃之溫度而製成硬化膜。該加熱處理是選擇溫度階段性地進行升溫或者選擇某溫度範圍連續地升溫，實施5分鐘~5小時。其中一例是於130℃、200℃下分別各進行30分鐘之熱處理。或者可列舉以2小時而自室溫直線性升溫至250℃等方法。此時，加熱溫度較佳的是150℃以上、300℃以下之溫度，更佳的是180℃以上、250℃以下。
如此進行熱壓接而所得之接著體的接著強度，自接著 可靠性之觀點考慮較佳的是40MPa以上。更佳的是50MPa以上。
硬化膜之膜厚可任意設定，較佳的是0.5μm以上100μm以下。
其次，對作為本發明之感光性接著劑組成物及感光性接著劑膜之用途的具有感光性接著劑組成物覆膜的半導體裝置加以說明。另外，近年來提出了各種結構的半導體裝置，本發明之感光性接著劑組成物之用途並不限定於以下。
本發明之感光性接著劑組成物及感光性接著劑膜可適用為用以對半導體元件、半導體裝置、電路基板、金屬配線材料進行接著、固定或密封的半導體用接著劑。而且，本發明中所謂之半導體裝置不僅僅是將半導體元件連接於基板上而成的裝置、或者將半導體元件彼此或基板彼此連接而成的裝置，還指可藉由利用半導體元件之特性而發揮功能的所有裝置，電光學裝置、半導體電路基板及包含該些之電子零件均包含於半導體裝置內。
使用本發明之感光性接著劑組成物及感光性接著劑膜的半導體裝置之製造方法的一例如下所述。將具有第一連接端子之第一電路部件、與具有第二連接端子之第二電路部件，以第一連接端子與第二連接端子對向之方式進行配置。其次，於所述對向配置之第一連接端子與第二連接端子之間插入本發明之感光性接著劑膜，形成感光性接著劑組成物覆膜。或者，於第一連接端子面或第二連接端子面之任意面或兩個面塗佈感光性接著劑組成物之清漆，進行 乾燥，由此而形成感光性接著劑組成物覆膜。其次，對感光性接著劑組成物覆膜進行圖案化，對第一連接端子與第二連接端子之應獲得導通之部分進行開口。其後，對第一電路部件與第二電路部件進行加熱加壓，將該些部件電性連接。
電性連接可在將上述感光性接著劑組成物覆膜先僅形成於任意電路部件之連接端子側之面後進行，亦可形成於第一電路部件及第二電路部件之連接端子側之兩個面上後進行。而且，亦可於第一電路部件及/或第二電路部件形成貫通電極，於部件之單面及/或兩個面形成連接端子。此種電路部件可使用：形成有鍍敷凸塊(plating bump)或柱形凸塊(stud bump)等凸塊的半導體晶片，電阻器晶片、電容器晶片等晶片零件，具有TSV(Through-Silicon Via，矽通孔)電極之半導體晶片或矽內插器(silicon interposer)、環氧玻璃(glass epoxy)電路基板、薄膜電路基板等基板。使用於兩個面具有連接端子之電路部件、亦即兩面配線基板而反覆進行如上所述之連接，由此獲得3維積層有電路部件的半導體裝置。
於上述之半導體裝置之製造方法中，藉由使用本發明之感光性接著劑組成物及感光性接著劑膜，可獲得硬化後之接著劑之端部存在於較電路部件之端部更內側的半導體裝置，亦即於對第一電路部件與第二電路部件進行加熱加壓後，接著劑向電路部件外周之溢出(焊縫(fillet))之產生得到抑制的半導體裝置。藉由抑制焊縫之產生，變得可 減小半導體裝置之封裝面積，從而有助於半導體裝置之輕薄短小化。即使於未使用本發明之感光性接著劑組成物之情形時，亦可藉由預先並不於電路部件之周邊部形成接著劑組成物覆膜，而與上述同樣地抑制焊縫之產生。然而，於此種方法中位置對準非常成問題，另外，於對1枚晶圓進行加工時，於特定之位置形成接著劑組成物覆膜之操作非常困難。相對於此，以使用本發明之感光性接著劑組成物及感光性接著劑膜之方法，可藉由圖案化而將電路部件之周邊部的感光性接著劑組成物覆膜除去，由此而容易地獲得焊縫之產生得到抑制的半導體裝置。
焊縫之產生得到抑制的半導體裝置之製造方法之一例如下所述。於具有第一電路部件第一連接端子面與具有第二電路部件之第二連接端子面的至少一個面，藉由與上述半導體裝置之製造方法同樣之方法而形成感光性接著劑組成物覆膜。其次，藉由感光性接著劑組成物覆膜之圖案化，對第一連接端子與第二連接端子之應獲得導通之部分進行開口，且將第一電路部件及/或第二電路部件之周邊部的感光性接著劑組成物覆膜除去。其後，使第一電路部件與第二電路部件的連接端子面彼此夾著感光性接著劑組成物覆膜而對向，進行加熱加壓而將該些接著。其結果，獲得並不自第一電路部件及第二電路部件溢出感光性接著劑組成物覆膜之硬化物的半導體裝置。
而且，作為其他之用途，於形成有由光電二極管(photodiode)或彩色濾光片、微透鏡列陣所構成之CCD 或CMOS影像感測器的矽晶圓上貼附感光性接著劑膜，或者塗佈感光性接著劑組成物之清漆而加以乾燥，藉此而形成感光性接著劑組成物覆膜。對其進行圖案化後，於殘存之圖案上積層玻璃基板作為支撐基板而進行熱壓接。對其進行加熱而使感光性接著劑組成物覆膜硬化。由此而獲得以圖案化之感光性接著劑組成物覆膜的硬化物為隔板而接著有半導體元件與玻璃基板的中空結構的影像感測器。
實例
以下，基於實例而對本發明加以具體之說明，但本發明並不限定於此。
<合成之聚醯亞胺之醯亞胺化率>
首先，測定聚合物之紅外線吸收光譜，確認起因於聚醯亞胺之醯亞胺結構的吸收峰值(1,780cm-1 附近、1,377cm-1 附近)之存在。其次，於350℃下對該聚合物進行1小時之熱處理後，再次測定紅外線吸收光譜，比較熱處理前與熱處理後之1,377cm-1 附近之峰值強度。將熱處理後之聚合物之醯亞胺化率設為100%，求出熱處理前之聚合物之醯亞胺化率。
<合成之聚醯亞胺之Tg>
使用示差掃描熱析儀(精工電子奈米科技公司製造、EXSTARDSC6220)，對聚醯亞胺粉體於升溫速度為20℃/min下進行測定，將對熱量變化曲線進行微分而所得的曲線顯示最大值時的溫度作為聚醯亞胺的Tg。
<對附有凹凸之基板之於低溫下之熱壓接性的評價>
使用正型感光性聚醯亞胺塗佈劑PHOTONEECE PW-1000(商品名、東麗股份有限公司製造)，於矽晶圓上形成線寬/線距=50μm/50μm之圖案，獲得附有凹凸之矽晶圓基板。凹凸之高度為5μm。其次，將各實例及比較例中所製作之感光性接著劑膜之保護膜剝離，使用貼合機(laminator)(Takatori Corporation製造、VTM-200M)，於平台溫度80℃、輥溫度80℃、真空度150Pa、貼附速度5mm/sec、貼附壓力0.2MPa之條件將該剝離面貼合於矽晶圓上。而且，將支撐體膜剝離後，使用超高壓水銀燈而以1,000mJ/cm2 (i線換算)之曝光量進行曝光。將附有曝光後之感光性接著劑膜之矽晶圓切斷為50mm×50mm，使感光性接著劑膜朝上而載置於100℃之加熱板上保持30秒。於30秒後，將切斷為4mm×4mm之上述附有凹凸之矽晶圓置於感光性接著劑膜上，於0.3MPa之壓力下進行30秒之熱壓接。其後，放置冷卻至室溫後，以鑷子夾住附有凹凸之基板而提昇基板時，將附有凹凸之矽晶圓與50mm見方之矽晶圓接著之情況記為G，將未接著之情況記為F。
<解像度之評價>
與上述同樣地，於矽晶圓上形成感光性接著劑膜。而且，將支撐體膜剝離後，於曝光裝置上放置具有線寬/線距=75μm/75μm、50μm/50μm、30μm/30μm之圖案的遮罩，於遮罩與感光性接著劑膜之曝光間隙為100μm之條件下，使用超高壓水銀燈，以400mJ/cm2 (i線換算)之曝光量進行曝光。於曝光後，藉由浸漬顯影，使用四甲基 氫氧化銨之2.38%水溶液而將未曝光部除去，藉由水進行沖洗處理。顯影時間設為未曝光部完全溶解之時間的1.5倍時間。藉由光學顯微鏡對如此而所得之圖案進行觀察，將圖案之線上無堵塞等異常之情形時的最小尺寸作為解像度之評價。而且，將無法顯影圖案之線的L/S=75μm/75μm的情況、或者於顯影時並未於基板上殘存圖案之情形記為F。
<殘膜率之評價>
藉由以下之式算出如上所述而進行曝光、顯影後的曝光部之殘膜率。而且，於解像度之評價中為F之情況時並不進行殘膜率之評價。
殘膜率(%)=顯影後之膜厚÷感光性樹脂組成物膜之膜厚×100
<高溫時之接著強度之評價>
與上述同樣地，於矽晶圓上形成感光性接著劑膜。而且，將支撐體膜剝離後，使用超高壓水銀燈，以1,000mJ/cm2 (i線換算)之曝光量進行曝光。於曝光後，藉由浸漬顯影，使用四甲基氫氧化銨之2.38%水溶液而將未曝光部除去，藉由水進行沖洗處理。顯影時間設為未曝光部完全溶解之時間的1.5倍時間。於顯影後，使用100℃之熱風烘箱，進行15分鐘之加熱乾燥處理。將樣品放置冷卻至室溫後，使感光性接著劑膜朝上，置於100℃之加熱板 上保持30秒。於30秒後，將2mm×2mm之矽晶圓置於感光性接著劑膜上，於0.3MPa之壓力下進行30秒之熱壓接。其後，使用無氧化烘箱(inert oven)(Koyo Thermo Systems Co.,Ltd.，製造、INL-60)，於N2 環境下、200℃下進行60分鐘之熱處理，獲得矽晶圓彼此接著之樣品。其後，使用晶片切變強度測試機(Dage系列4000)而測定於260℃下之接著強度。而且，對附有凹凸之基板之於低溫下之熱壓接性為F之情況時，並未進行接著強度之測定。
樣品尺寸：2mm×2mm
測試速度：200μm/s
測試高度：300μm
於各實例及比較例中所使用之聚醯亞胺藉由以下之方法而合成。
(合成例1)
於乾燥氮氣流下，使2,2-雙(3-胺基-4-羥基苯基)六氟丙烷(以下稱為BAHF)30.95g(0.0845莫耳)、1,3-雙(3-胺基丙基)四甲基二矽氧烷1.24g(0.005莫耳)溶解於N-甲基吡咯啶酮(以下稱為NMP)100g中。於其中添加雙(3,4-二羧基苯基)醚二酐(以下稱為ODPA)31.02g(0.1莫耳)與NMP 30g，於20℃下攪拌1小時，其次於50℃下攪拌4小時。於其中添加3-胺基苯酚2.5g(0.02莫耳)，於50℃下攪拌2小時後，於180℃下攪拌5小時而獲得樹脂溶液。其次，將樹脂溶液投入至水3L中而收集白色沈澱。過濾收集該沈澱，以水清洗3次後，於80℃之真空乾 燥機中乾燥5小時。所得之樹脂粉體之醯亞胺化率為94%，Tg為197℃。
(合成例2)
於乾燥氮氣流下，使BAHF 20.14g(0.055莫耳)、1,3-雙(3-胺基丙基)四甲基二矽氧烷1.24g(0.005莫耳)、聚氧化丙烯二胺(Mitsui Fine Chemicals,Inc.製造)7.14g(0.03莫耳)、作為封端劑之3-胺基苯酚2.5g(0.02莫耳)溶解於NMP 100g中。於其中添加ODPA 31.02g(0.1莫耳)與NMP 30g，於50℃下攪拌4小時。其後，於180℃下攪拌5小時而獲得樹脂溶液。其次，將樹脂溶液投入至水3L中而收集白色沈澱。過濾收集該沈澱，以水清洗3次後，於80℃之真空乾燥機中乾燥5小時。所得之樹脂粉體之醯亞胺化率為95%，Tg為140℃。
(實例1)
將作為(A)成分之合成例1中所得之聚醯亞胺100g、作為(B)成分之jER-630(商品名、三菱化學股份有限公司製造)60g、作為(C)成分之BP-6EM(商品名、共榮社化學股份有限公司製造)60g、及作為(D)成分之NCI-831(商品名、ADEKA股份有限公司製造)5g溶解於丙二醇單甲醚乙酸酯/乳酸乙酯=40/60之比率的溶劑中。將溶劑以外之添加物作為固形物，以固形物濃度成為45%之方式調整溶劑之添加量。其後，使用保留粒徑為2μm之過濾器而進行加壓過濾，獲得感光性接著劑組成物清漆。
使用刮刀式輥塗機將所得之清漆塗佈於厚度為38μm 之PET膜上，於75℃下進行6分鐘之乾燥後，貼合厚度為10μm之PP膜作為保護膜，獲得感光性接著劑膜。將感光性接著劑膜之膜厚調整為30μm。使用所得之感光性接著劑膜，如上所述那樣進行對附有凹凸之基板之於低溫下之熱壓接性、解像度、殘膜率、高溫時之接著強度之評價。將結果示於表3。
(實例2~實例7、比較例1~比較例4)
如表1~表2所述那樣變更(A)成分~(E)成分之混合比，除此以外與實例1同樣地進行而製作感光性接著劑膜，如上所述那樣進行對附有凹凸之基板之於低溫下之熱壓接性、解像度、殘膜率、高溫時之接著強度之評價。將結果示於表3。
於比較例1中，未使用(B)成分之環氧化合物，因此無法獲得於低溫下之熱壓接性。如比較例2~比較例3所示，於僅僅使用與(B)成分不同之環氧化合物之情形時，雖然接著強度提高，但不能鹼性顯影(比較例2)，相反雖然可鹼性顯影，但接著強度並不提高等(比較例3)，無法獲得滿足所要求之特性的組成物。於比較例4中，使 用Tg不足160℃之聚醯亞胺，因此接著強度並未提高。
另外，於表1、表2中所使用之(B)、(C)、(E)之結構如下所示。
(B)jER-630、三菱化學股份有限公司製造
(B)jER-604、三菱化學股份有限公司製造
(C)BP-6EM、共榮社化學股份有限公司製造
(E)850-S、DIC股份有限公司製造
(E)EP-4003S n+m=5~6、ADEKA股份有限公司製造
(實例8)
藉由利用旋轉器之旋塗而塗佈以實例3之組成而所得之感光性接著劑組成物清漆，於加熱板上、100℃下進行3分鐘之乾燥。以乾燥後之膜厚成為30μm之方式調整轉速。其後，如上所述那樣進行對附有凹凸之基板之於低溫下之熱壓接性、解像度、高溫時之接著強度之評價。此時，對附有凹凸之基板之於低溫下之熱壓接性為G，解像度為L/S=50/50，高溫時之接著強度為10MPa。
(實例9)
與實例1同樣地獲得感光性接著劑膜。其次，剝離感光性接著劑膜之保護膜，使用貼合機(Takatori Corporation製造、VTM-200M)，於平台溫度80℃、輥溫度80℃、真空度150Pa、貼附速度5mm/sec、貼附壓力0.2MPa之條件將該剝離面貼合於附有凸塊電極(柱形金凸塊、晶片大小為7.5mm見方)之半導體晶圓(直徑為200mm、厚度為625μm)之凸塊電極形成面上，獲得附有感光性接著劑組成物覆膜之半導體晶圓。
其次，於曝光裝置上安放半導體晶圓內之半導體晶片周邊300μm與柱形金凸塊部稱為未曝光部之遮罩，使用超高壓水銀燈而以1,000mJ/cm2 (i線)之曝光量進行曝光。於曝光後，藉由浸漬顯影，使用四甲基氫氧化銨之2.38%水溶液而將未曝光部除去，藉由水進行沖洗處理。於顯影後，使用100℃之熱風烘箱，進行15分鐘之加熱乾燥處理，獲得半導體晶圓內之半導體晶片之周邊部與凸塊上之感光性接著劑組成物覆膜被除去的半導體晶圓。
其次，將上述所得之半導體晶圓固定於膠帶框及切割保護膠帶上。使用晶圓貼片機裝置(TECHNOVISION股份有限公司製造、FM-114)，於與凸塊電極為相反側之晶圓基板面上貼合切割保護膠帶(LINTEC股份有限公司製造、D-650)而進行固定。
其次，於如下所述之切削條件下進行切割。
切割裝置：DAD-3350(DISCO股份有限公司製造)
半導體晶片大小：7.5mm×7.5mm
刀片：NBC-ZH2030-27HCDE
主軸轉速：30,000rpm
切削速度：25mm/s
切削深度：切割保護膠帶之深度10μm為止
切割：單程全切(one pass full-cut)
切割模式：順切(down cut)
切削水量：3.7L/min
切削水及冷卻水：溫度23℃、導電度0.5MΩ‧cm(於 超純水中注入二氧化碳氣體)
其結果，獲得半導體晶片之周邊部的感光性接著劑組成物覆膜被除去之半導體晶片(7.3mm見方)(圖1a)。
其次，使用覆晶接合(flip chip bonding)裝置(東麗工程股份有限公司製造、FC-2000)，將附有感光性接著劑組成物覆膜之半導體晶片，覆晶接合於成為被黏著體之半導體晶片(金焊墊電極、7.5mm見方之半導體晶片)上。覆晶接合是將成為被黏著體之半導體晶片固定於被加熱至100℃的焊接平台上，於溫度100℃、壓力15N/晶片、時間5秒之條件進行預壓接後，於溫度200℃、壓力200N/晶片之條件下，將時間設為10秒而進行正式壓接，獲得半導體晶片與半導體晶片接著而成之半導體裝置(圖1b)。
為了確認有無自半導體晶片溢出感光性接著劑組成物覆膜，進行所得之半導體裝置之上表面及截面之光學顯微鏡觀察。於自上表面之觀察中，並未發現接著劑向半導體晶片外周溢出。而且，截面觀察之結果是如圖1b所示那樣，接著劑之端面停留於半導體晶片之更內側。
[產業上之可利用性]
本發明之感光性接著劑組成物及感光性接著劑膜可適用為用以對半導體元件、半導體裝置、電路基板、金屬配線材料進行接著、固定或密封的半導體用接著劑。
100‧‧‧附有柱形金凸塊電極之半導體晶片
101‧‧‧柱形金凸塊
102‧‧‧感光性接著劑組成物覆膜
103‧‧‧金銲墊
104‧‧‧附有金銲墊電極之半導體晶片
圖1a~圖1b是表示使用本發明之感光性接著劑組成物之半導體裝置之製造方法的一例。
100‧‧‧附有柱形金凸塊電極之半導體晶片
101‧‧‧柱形金凸塊
102‧‧‧感光性接著劑組成物覆膜

Claims (13)

  1. 一種感光性接著劑組成物，其含有(A)鹼可溶性聚醯亞胺，具有下述通式(1)所表示之結構單元且於主鏈末端之至少一個末端具有下述通式(2)及/或下述通式(3)所表示之結構、(B)下述通式(4)或下述通式(5)所表示之縮水甘油胺型環氧化合物、(C)光聚合性化合物及(D)光聚合起始劑，且上述(A)鹼可溶性聚醯亞胺之玻璃轉移溫度為160℃以上， 於上述通式(1)~上述通式(3)中，Y表示具有至少一個選自由羧基、酚性羥基、磺酸基及巰基所構成之群組之基的1價之有機基，Z表示具有至少一個選自由羧基、酚性羥基、磺酸基及巰基所構成之群組之基的2價之有機基；而且，R1 表示4價~14價之有機基，R2 表示2價~12價之有機基，R3 及R4 分別獨立地表示選自由羧基、酚性羥基、磺酸基、及巰基所構成之群組之至少一個基；而且，α及β分別獨立地表示0~10之整數， 於上述通式(4)~上述通式(5)中，R5 ~R20 可分別相同亦可分別不同，為縮水甘油醚基、下述通式(6)所表示之基、氫原子、或碳數為1~5之烷基；其中，於上述通式(4)中，R5 ~R10 中之至少1個是縮水甘油醚基且至少1個是下述通式(6)所表示之基，或者R5 ~R10 中之至少2個是下述通式(6)所表示之基；而且，於上述通式(5) 中，R11 ~R15 中之至少1個與R16 ~R20 中之至少1個是下述通式(6)所表示之基；而且，於上述通式(5)中，X表示直接鍵結、碳數為1~6之亞烷基、醚基、硫醚基、磺醯基或亞芳基；上述亞烷基可為鏈狀亦可為環狀， 於上述通式(6)中，R21 是縮水甘油基或碳數為1~5之烷基。
  2. 如申請專利範圍第1項所述之感光性接著劑組成物，其中，於上述通式(6)中，R21 是縮水甘油基。
  3. 如申請專利範圍第1項或第2項所述之感光性接著劑組成物，其中，上述(A)鹼可溶性聚醯亞胺中所含之鹼可溶性基是酚性羥基。
  4. 如申請專利範圍第1項或第2項所述之感光性接著劑組成物，其更含有(E)液狀環氧化合物，其具有芳香族基而不具有縮水甘油基胺基。
  5. 一種感光性接著劑膜，其含有(A)鹼可溶性聚醯亞胺，具有下述通式(1)所表示之結構單元且於主鏈末端之至少一個末端具有下述通式(2)及/或下述通式(3)所表示之結構、(B)下述通式(4)或下述通式(5)所表示之縮水甘油胺型環氧化合物、(C)光聚合性化合物及(D) 光聚合起始劑，且上述(A)鹼可溶性聚醯亞胺之玻璃轉移溫度為160℃以上， 於上述通式(1)~上述通式(3)中，Y表示具有至少一個選自由羧基、酚性羥基、磺酸基及巰基所構成之群組之基的1價之有機基，Z表示具有至少一個選自由羧基、酚性羥基、磺酸基及巰基所構成之群組之基的2價之有機基；而且，R1 表示4價~14價之有機基，R2 表示2價~12價之有機基，R3 及R4 分別獨立地表示選自由羧基、酚 性羥基、磺酸基、及巰基所構成之群組之至少一個基；而且，α及β分別獨立地表示0~10之整數， 於上述通式(4)~上述通式(5)中，R5 ~R20 可分別相同亦可分別不同，為縮水甘油醚基、下述通式(6)所表示之基、氫原子、或碳數為1~5之烷基；其中，於上述通式(4)中，R5 ~R10 中之至少1個是縮水甘油醚基且至少1個是下述通式(6)所表示之基，或者R5 ~R10 中之至少2個是下述通式(6)所表示之基；而且，於上述通式(5)中，R11 ~R15 中之至少1個與R16 ~R20 中之至少1個是下述通式(6)所表示之基；而且，於上述通式(5)中，X表示直接鍵結、碳數為1~6之亞烷基、醚基、硫醚基、磺醯基或亞芳基；上述亞烷基可為鏈狀亦可為環狀， 於上述通式(6)中，R21 是縮水甘油基或碳數為1~5之烷基。
  6. 如申請專利範圍第5項所述之感光性接著劑膜，其中，於上述通式(6)中，R21 是縮水甘油基。
  7. 如申請專利範圍第5項或第6項所述之感光性接著劑膜，其中，上述(A)鹼可溶性聚醯亞胺中所含之鹼可溶性基是酚性羥基。
  8. 如申請專利範圍第5項或第6項所述之感光性接著劑膜，其更含有(E)液狀環氧化合物，其具有芳香族基而不具有縮水甘油基胺基。
  9. 一種硬化物，其是如申請專利範圍第1項至第4項中任一項所述之感光性接著劑組成物或如申請專利範圍第5項至第8項中任一項所述之感光性接著劑膜的硬化物。
  10. 一種半導體裝置，其具有如申請專利範圍第1項至第4項中任一項所述之感光性接著劑組成物或如申請專利範圍第5項至第8項中任一項所述之感光性接著劑膜的硬化物。
  11. 一種半導體裝置，其於電路部件之間具有如申請專利範圍第1項至第4項中任一項所述之感光性接著劑組成物或如申請專利範圍第5項至第8項中任一項所述之感 光性接著劑膜的硬化物，且上述硬化物之端部存在於較上述電路部件之端部更內側。
  12. 一種半導體裝置，其是於具有第一電路部件之第一連接端子面與具有第二電路部件之第二連接端子面之至少一者設置感光性接著劑組成物覆膜，上述感光性接著劑組成物覆膜為由如申請專利範圍第1項至第4項中任一項所述之感光性接著劑組成物或如申請專利範圍第5項至第8項中任一項所述之感光性接著劑膜所形成，藉由圖案化而對所期望之位置進行開口後，藉由加熱加壓而將上述第一電路部件與上述第二電路部件電性連接而所得的半導體裝置，且上述感光性接著劑組成物或上述感光性接著劑膜之硬化物的端部存在於較上述第一電路部件及上述第二電路部件之端部更內側。
  13. 一種半導體裝置的製造方法，其是於具有第一電路部件之第一連接端子面與具有第二電路部件之第二連接端子面之至少一者設置感光性接著劑組成物覆膜，上述感光性接著劑組成物覆膜為由如申請專利範圍第1項至第4項中任一項所述之感光性接著劑組成物或如申請專利範圍第5項至第8項中任一項所述之感光性接著劑膜所形成，藉由圖案化而對所期望之位置進行開口後，藉由加熱加壓而將上述第一電路部件與上述第二電路部件電性連接。
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JPWO2012005079A1 (ja) 2013-09-02
WO2012005079A1 (ja) 2012-01-12
CN102985505A (zh) 2013-03-20
JP5935323B2 (ja) 2016-06-15
CN102985505B (zh) 2014-08-20
KR20130096644A (ko) 2013-08-30
MY158488A (en) 2016-10-14
US20130105998A1 (en) 2013-05-02

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