JP5663826B2 - 接着シート、接着剤層付半導体ウェハ、並びに半導体装置及びその製造方法 - Google Patents
接着シート、接着剤層付半導体ウェハ、並びに半導体装置及びその製造方法 Download PDFInfo
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- JP5663826B2 JP5663826B2 JP2008266539A JP2008266539A JP5663826B2 JP 5663826 B2 JP5663826 B2 JP 5663826B2 JP 2008266539 A JP2008266539 A JP 2008266539A JP 2008266539 A JP2008266539 A JP 2008266539A JP 5663826 B2 JP5663826 B2 JP 5663826B2
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- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
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- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
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- 239000000391 magnesium silicate Substances 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
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- 229940086559 methyl benzoin Drugs 0.000 description 1
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical compound C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 description 1
- ZWRDBWDXRLPESY-UHFFFAOYSA-N n-benzyl-n-ethylethanamine Chemical compound CCN(CC)CC1=CC=CC=C1 ZWRDBWDXRLPESY-UHFFFAOYSA-N 0.000 description 1
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- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
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- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
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- 150000007524 organic acids Chemical class 0.000 description 1
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- 125000000466 oxiranyl group Chemical group 0.000 description 1
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- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- JGGWKXMPICYBKC-UHFFFAOYSA-N phenanthrene-1,8,9,10-tetracarboxylic acid Chemical compound C1=CC=C(C(O)=O)C2=C(C(O)=O)C(C(O)=O)=C3C(C(=O)O)=CC=CC3=C21 JGGWKXMPICYBKC-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical class [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 description 1
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- 229920006267 polyester film Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
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- 239000002244 precipitate Substances 0.000 description 1
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- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 150000003147 proline derivatives Chemical class 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- YKWDNEXDHDSTCU-UHFFFAOYSA-N pyrrolidine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1NC(C(O)=O)C(C(O)=O)C1C(O)=O YKWDNEXDHDSTCU-UHFFFAOYSA-N 0.000 description 1
- 150000003235 pyrrolidines Chemical class 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
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- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- RINCXYDBBGOEEQ-UHFFFAOYSA-N succinic anhydride Chemical compound O=C1CCC(=O)O1 RINCXYDBBGOEEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229940066771 systemic antihistamines piperazine derivative Drugs 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- NJMOHBDCGXJLNJ-UHFFFAOYSA-N trimellitic anhydride chloride Chemical compound ClC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 NJMOHBDCGXJLNJ-UHFFFAOYSA-N 0.000 description 1
- 238000005829 trimerization reaction Methods 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- GRPURDFRFHUDSP-UHFFFAOYSA-N tris(prop-2-enyl) benzene-1,2,4-tricarboxylate Chemical compound C=CCOC(=O)C1=CC=C(C(=O)OCC=C)C(C(=O)OCC=C)=C1 GRPURDFRFHUDSP-UHFFFAOYSA-N 0.000 description 1
- KLNPWTHGTVSSEU-UHFFFAOYSA-N undecane-1,11-diamine Chemical compound NCCCCCCCCCCCN KLNPWTHGTVSSEU-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229920006163 vinyl copolymer Polymers 0.000 description 1
Images
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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Description
SP値(δ)=ΣΔF/ΣΔυ
[式中、R7及びR8は各々独立に、炭素数1〜5のアルキレン基又は置換基を有してもよいフェニレン基を示し、R9、R10、R11及びR12は各々独立に、炭素数1〜5のアルキル基、フェニル基又はフェノキシ基を示し、n2は1〜5の整数を示す。]
また、感光性接着剤樹脂組成物の厚さが30μm以上の場合、フォトブリーチングする光開始剤を用いることが好ましい。
攪拌機、温度計、及び窒素置換装置を備えたフラスコ内に3,5−ジアミノ安息香酸(以下「DABA」と略す)2.28g、脂肪族エーテルジアミン(BASF社製「ED400」(商品名)、分子量433)15.16g及びN−メチル−2−ピロリジノン(以下「NMP」と略す)を仕込んだ。次いで4,4’−オキシジフタル酸二無水物(以下「ODPA」と略す)16gをNMPに溶解した溶液を反応系の温度が50℃を超えないように調整しながら上記フラスコ内に滴下した。滴下終了後、更に室温で5時間攪拌した。次に該フラスコに水分受容器付の還流冷却器を取り付け、キシレンを加え、180℃に昇温させてその温度を5時間保持した。こうして得られた溶液を室温まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリイミド(以下「ポリイミドPI−1」という。)を得た。
攪拌機、温度計、及び窒素置換装置を備えたフラスコ内に5,5’−メチレン−ビス(アントラニリックアシッド)(以下「MBAA」と略す、分子量286.28)2.15g及び、脂肪族エーテルジアミン(BASF社製「ED400」(商品名)、分子量433)15.59g及び1,1,3,3−テトラメチル−1,3−ビス(4−アミノフェニル)ジシロキサン(信越化学製「LP−7100」(商品名)分子量348.4)2.26g及びNMPを仕込んだ。次いでODPA 17gをNMPに溶解した溶液を反応系の温度が50℃を超えないように調整しながら上記フラスコ内に滴下した。これ以降の操作は全てポリイミドPI−1の合成と同様に行って、ポリイミド(以下「ポリイミドPI−2」という。)を得た。
攪拌機、温度計、及び窒素置換装置を備えたフラスコ内に2,2−ビス(4−アミノフェノキシフェニル)プロパン(以下「BAPP」と略す)6.83g、4,9−ジオキサデカン−1,12−ジアミン(以下「B−12」と略す)3.40g及びNMPを仕込んだ。次いでデカメチレンビストリメリテートニ無水物(以下「DBTA」と略す)17.40gをNMPに溶解した溶液を反応系の温度が50℃を超えないように調整しながら上記フラスコ内に滴下した。これ以降の操作は全てポリイミドPI−1の合成と同様に行って、ポリイミド(以下「ポリイミドPI−3」という。)を得た。
ポリイミドPI−1、放射線重合性化合物としてのエトキシ化ビスフェノールAジメタクリレート(「BPE−100」(商品名)、新中村化学社製)、及びイソシアヌル酸EO変性トリアクリレート(「M−315」(商品名)、東亜合成社製)、光重合開始剤としてのビス(2,4,6−トリメチルベンゾイル)−フェニルフォスフィンオキサイド(「I−819」(商品名)、チバ・スペシャルティ・ケミカルズ社製)、熱硬化性樹脂としてのビスフェノールF型液状エポキシ樹脂(「YDF−8170」(商品名)、東都化成社製)、ビスフェノールAビス(トリエチレングリコールグリシジルエーテル)エーテル(「BEO−60E」(商品名)、新日本理化社製)、及び前記エポキシ樹脂の硬化剤としてのα,α,α’−トリス(4−ヒドロキシフェニル)−1−エチル−4−イソプロピルベンゼン(「TrisP−PA」(商品名)、本州化学社製)を、表2に示す組成(質量部)となるように、NMP中で均一に混合して、接着フィルム形成用のワニスを調製した。このワニスを、離型用シリコーンで表面処理したPETフィルム上に塗布し、オーブン中にて80℃20分、120℃20分の条件で乾燥させ、厚さ40μmの接着フィルムを形成させた。
それぞれ、表1及び2に示す原料及び組成とした。実施例2〜10及び比較例1〜4については、実施例1と同様にして、接着フィルムを作製した。
BPE−100:新中村化学工業社製、エトキシ化ビスフェノールAジメタクリレート(2官能エステルアクリレート、SP値:9.08(cal/cm3)1/2、分子量:約450)
BPE−200:新中村化学工業社製、エトキシ化ビスフェノールAジメタクリレート(2官能エステルアクリレート、SP値:9.58(cal/cm3)1/2、分子量:約600)
BPE−500:新中村化学工業社製、エトキシ化ビスフェノールAジメタクリレート(2官能エステルアクリレート、SP値:10.58(cal/cm3)1/2、分子量:約1100)
AH−600:共栄社化学社製、フェニルグリシジルエーテルアクリレートヘキサメチレンジイソシアネートウレタンプレポリマー(4官能ウレタンアクリレート、SP値:12.4(cal/cm3)1/2、分子量:518)
M−313:東亜合成社製、イソシアヌル酸EO変性ジ及びトリアクリレート(2〜3官能イソシアヌル酸アクリレート、SP値:約13(cal/cm3)1/2、分子量:約350)
A−DCP:新中村化学工業社製、トリシクロデカンジメタノールジアクリレート(2官能エステルアクリレート、SP値:9.4(cal/cm3)1/2、分子量:328)
M−315:東亜合成社製、イソシアヌル酸EO変性トリアクリレート(3官能イソシアヌル酸アクリレート、SP値:13.3(cal/cm3)1/2、分子量:423)
M−215:東亜合成社製、イソシアヌル酸EO変性ジアクリレート(2官能イソシアヌル酸アクリレート、SP値:13.7(cal/cm3)1/2、分子量:369)
UA−21:新中村化学工業社製、(3官能イソシアヌル酸アクリレート、SP値:11.9(cal/cm3)1/2、分子量:1288)
UA−7100:新中村化学工業社製、(3官能イソシアヌル酸アクリレート、SP値:11.2(cal/cm3)1/2、分子量:2172)
M−140:東亜合成社製、N−アクリロイルオキシエチルヘキサヒドロフタルイミド(単官能イミドアクリレート、SP値:11.6(cal/cm3)1/2、分子量:251)
DPHA:新中村化学工業社製、プロポキシ化ジペンタエリスリトールヘキサアクリレート(6官能エステルアクリレート、SP値:9.11(cal/cm3)1/2、分子量:570)
YDF−8170:東都化成社製、ビスフェノールF型エポキシ樹脂
BEO−60E:新日本理化社製、ビスフェノールAビス(トリエチレングリコールグリシジルエーテル)エーテル
TrisP−PA:本州化学社製、トリスフェノール化合物(α,α,α’−トリス(4−ヒドロキシフェノル)−1−エチル−4−イソプロピルベンゼン)
R972:日本アエロジル社製、疎水性フュームドシリカ(平均粒径:約16nm)
I−819:チバ・スペシャルティ・ケミカルズ社製、ビス(2,4,6−トリメチルベンゾイル)−フェニルフォスフィンオキサイド
NMP:関東化学社製、N−メチル−2−ピロリジノン
支持台上に載せたシリコンウェハ(6インチ径、厚さ400μm)の裏面(支持台と反対側の面)に、実施例1〜10及び比較例1〜4で得られた接着シートを、接着剤層をシリコンウェハ側にしてロール(温度100℃、線圧4kgf/cm、送り速度0.5m/分)で加圧することにより積層した。次いで、基材(PETフィルム)を剥がし、接着剤層上に、厚み80μm、幅10mm、長さ40mmのポリイミドフィルム(宇部興産社製、「ユーピレックス」(商品名))を上記と同様の条件でロールにより加圧して積層した。このようにして準備したサンプルについて、レオメータ(東洋製機製作所社製、「ストログラフE−S」(商品名))を用いて、室温で90°ピール試験を行って、接着剤層−ユーピレックス間のピール強度を測定した。その測定結果に基づいて、ピール強度が2N/cm以上のサンプルをA、2N/cm未満のサンプルをBとして評価した。その結果を表1及び2に示す。
接着シートを、シリコンウェハ(6インチ径、厚さ400μm)上に、温度100℃で接着剤層をシリコンウェハ側にしてロールで加圧(線圧4kgf/cm、送り速度0.5m/分)することにより積層した。
シリコンウェハ(6インチ径、厚さ400μm)を、5mm×5mmの大きさで深さ180μmまでハーフカットした。その後、接着シートを、ハーフカット処理したシリコンウェハ上に、100℃でシリコンウェハ側にしてロールで加圧(線圧4kgf/cm、送り速度0.5m/分)することにより積層した。そして、得られたサンプルを高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))で500mJ/cm2で露光し、80℃のホットプレート上で約30秒間放置した。その後、基材(PETフィルム)を除去し、サンプルを5mm×5mmに個片化した。
Claims (15)
- 感光性接着剤組成物からなるフィルム状の接着剤層と、
ダイシングシートと、
を備え、該ダイシングシートと前記接着剤層とが積層されている、接着シートであって、
前記感光性接着剤組成物が、(A)カルボキシル基及び/又は水酸基を有するポリイミドと、(B)熱硬化性樹脂と、(C)放射線重合性化合物と、(D)光開始剤と、を含有し、
前記放射線重合性化合物が、10.0(cal/cm 3 ) 1/2 以上の溶解性パラメータを有する化合物を前記放射線重合性化合物全体の20質量%以上含み、
10.0(cal/cm 3 ) 1/2 以上の溶解性パラメータを有する前記化合物が、アミド基、イソシアヌル基、イミド基及び水酸基からなる群より選ばれる少なくとも1種の基を有する、接着シート。 - 10.0(cal/cm3)1/2以上の溶解性パラメータを有する前記化合物が、2〜4官能のアクリレート及び/又はメタクリレートである、請求項1記載の接着シート。
- 10.0(cal/cm3)1/2以上の溶解性パラメータを有する前記化合物の分子量が2000以下である、請求項1〜3のいずれか一項に記載の接着シート。
- 前記熱硬化性樹脂がエポキシ樹脂である、請求項1〜4のいずれか一項に記載の接着シート。
- 前記ポリイミドが、150℃以下のガラス転移温度及び5000〜150000の重量平均分子量を有する、請求項1〜5のいずれか一項に記載の接着シート。
- 前記ポリイミドがアルカリ可溶性である、請求項6記載の接着シート。
- 前記ポリイミドが、テトラカルボン酸二無水物とジアミンとを反応させて得られるものである、請求項6又は7記載の接着シート。
- 半導体ウェハと、該半導体ウェハの一面上に設けられた感光性接着剤組成物からなる接着剤層と、を備え、
前記感光性接着剤組成物が、(A)カルボキシル基及び/又は水酸基を有するポリイミドと、(B)熱硬化性樹脂と、(C)放射線重合性化合物と、(D)光開始剤と、を含有し、
前記放射線重合性化合物が、10.0(cal/cm 3 ) 1/2 以上の溶解性パラメータを有する化合物を前記放射線重合性化合物全体の20質量%以上含み、
10.0(cal/cm 3 ) 1/2 以上の溶解性パラメータを有する前記化合物が、アミド基、イソシアヌル基、イミド基及び水酸基からなる群より選ばれる少なくとも1種の基を有する、接着剤層付半導体ウェハ。 - 支持部材と、該支持部材に搭載された半導体素子と、前記支持部材と前記半導体素子との間に介在する接着剤層と、を備え、前記接着剤層が感光性接着剤組成物によって形成されている、半導体装置であって、
前記感光性接着剤組成物が、(A)カルボキシル基及び/又は水酸基を有するポリイミドと、(B)熱硬化性樹脂と、(C)放射線重合性化合物と、(D)光開始剤と、を含有し、
前記放射線重合性化合物が、10.0(cal/cm 3 ) 1/2 以上の溶解性パラメータを有する化合物を前記放射線重合性化合物全体の20質量%以上含み、
10.0(cal/cm 3 ) 1/2 以上の溶解性パラメータを有する前記化合物が、アミド基、イソシアヌル基、イミド基及び水酸基からなる群より選ばれる少なくとも1種の基を有する、半導体装置。 - 感光性接着剤組成物からなる接着剤層を露光し、露光後の前記接着剤層をアルカリ現像液を用いて現像することにより接着剤パターンを形成する工程と、
前記接着剤パターンを介して半導体素子とこれが搭載される支持部材とを接着する工程と、
を備え、
前記感光性接着剤組成物が、(A)カルボキシル基及び/又は水酸基を有するポリイミドと、(B)熱硬化性樹脂と、(C)放射線重合性化合物と、(D)光開始剤と、を含有し、
前記放射線重合性化合物が、10.0(cal/cm 3 ) 1/2 以上の溶解性パラメータを有する化合物を前記放射線重合性化合物全体の20質量%以上含み、
10.0(cal/cm 3 ) 1/2 以上の溶解性パラメータを有する前記化合物が、アミド基、イソシアヌル基、イミド基及び水酸基からなる群より選ばれる少なくとも1種の基を有する、半導体装置の製造方法。
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