JP5035476B2 - 接着剤組成物、それを用いた半導体装置及びその製造方法 - Google Patents
接着剤組成物、それを用いた半導体装置及びその製造方法 Download PDFInfo
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- JP5035476B2 JP5035476B2 JP2011540521A JP2011540521A JP5035476B2 JP 5035476 B2 JP5035476 B2 JP 5035476B2 JP 2011540521 A JP2011540521 A JP 2011540521A JP 2011540521 A JP2011540521 A JP 2011540521A JP 5035476 B2 JP5035476 B2 JP 5035476B2
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
- C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
工程1(図1):半導体ウェハ1内に形成された半導体チップ(半導体素子)2の回路面S1上に、はく離可能な粘着テープ(バックグラインドテープ)4を積層する。
工程2(図2):半導体ウェハ1を回路面S1とは反対側の面(裏面)S2から研磨して半導体ウェハ1を薄くする。
工程3(図3):半導体ウェハ1の裏面S2に接着剤組成物5を塗布する。
工程4(図4):塗布された接着剤組成物である接着剤層5側から露光を行い、接着剤組成物をBステージ化する。
工程5(図5):接着剤層5上にはく離可能な粘着テープ(ダイシングテープ)6を積層する。
工程6(図6):バックグラインドテープ4をはく離する。
工程7(図7):半導体ウェハ1をダイシングにより複数の半導体チップ2に切り分ける。
工程8(図8、9、10):半導体チップ2をピックアップして半導体素子搭載用の支持部材7又は他の半導体チップ2に圧着(マウント)する。
工程9(図11):マウントされた半導体チップを、ワイヤ16を介して支持部材7上の外部接続端子と接続する。
工程10(図12):複数の半導体チップ2を含む積層体を封止材17によって封止して、半導体装置100を得る。
半導体ウェハ1の回路面S1側にバックグラインドテープ4を積層する。バックグラインドテープの積層は、予めフィルム状に成形された粘着テープをラミネートする方法により行なうことができる。
半導体ウェハ1のバックグラインドテープ4とは反対側の面(裏面S2)を研磨して、半導体ウェハ1を所定の厚さまで薄くする。研磨は、バックグラインドテープ4によって半導体ウェハ1を研磨用の治具に固定した状態で、グラインド装置8を用いて行う。
研磨の後、半導体ウェハ1の裏面S2に接着剤組成物5を塗布する。塗布は、ボックス20内で、バックグラインドテープ4が貼り付けられた半導体ウェハ1を治具21に固定した状態で行うことができる。塗布方法は、印刷法、スピンコート法、スプレーコート法、ギャップコート法、ジェットディスペンス法、円コート法、及びインクジェット法などから選ばれる。これらの中でも、薄膜化及び膜厚均一性の観点から、スピンコート法やスプレーコート法が好ましい。スピンコート装置が有する吸着台には穴が形成されていてもよいし、吸着台がメッシュ状であってもよい。吸着痕が残りにくい点から、吸着台はメッシュ状であることが好ましい。スピンコート法による塗布は、ウェハのうねり、及びエッジ部の盛り上がりを防止するために、500〜5000rpmの回転数で行うことが好ましい。同様の観点から、回転数は1000〜4000rpmがさらに好ましい。接着剤組成物の粘度を調整する目的でスピンコート台に温度調節器を備えることもできる。
塗布された接着剤組成物である接着剤層5側から、露光装置9によって活性光線(典型的には紫外線)を照射して、接着剤組成物をBステージ化する。これにより接着剤層5が半導体ウェハ1に固定されるとともに、接着剤層5表面のタックを低減することができる。この段階で、本実施形態に係る接着剤層付き半導体ウェハが得られる。露光は、真空下、窒素下、空気下などの雰囲気下で行なうことができる。酸素阻害を低減するために、離形処理されたPETフィルムやポリプロピレンフィルム、ポリエチレンフィルムなどの基材を接着剤層5上に積層した状態で、露光することもできる。パターニングされたマスクを介して露光を行うこともできる。パターニングされたマスクを用いることにより、熱圧着時の流動性が異なる接着剤層を形成させることができる。露光量は、タック低減及びタクトタイムの観点から、50〜2000mJ/cm2が好ましい。
露光後、接着剤層5にダイシングテープなどのはく離可能な粘着テープ6を貼り付ける。粘着テープ6は、予めフィルム状に成形された粘着テープをラミネートする方法により貼り付けることができる。
続いて、半導体ウェハ1の回路面に貼り付けられたバックグラインドテープ4をはく離する。例えば、活性光線(典型的には紫外線)を照射することによって粘着性が低下する粘着テープを使用し、バックグラインドテープ4側から露光した後、これをはく離することができる。
ダイシングラインDに沿って半導体ウェハ1を接着剤層5とともに切断する。このダイシングにより、半導体ウェハ1が、それぞれの裏面に接着剤層5が設けられた複数の半導体チップ2に切り分けられる。ダイシングは、粘着テープ(ダイシングテープ)6によって全体をフレーム(ウェハリング)10に固定した状態でダイシングブレード11を用いて行われる。
ダイシングの後、切り分けられた半導体チップ2を、ダイボンド装置12によって接着剤層5とともにピックアップし、半導体装置用の支持部材(半導体素子搭載用支持部材)7または他の半導体チップ2に圧着(マウント)する。圧着は加熱しながら行なうことが好ましい。
工程8の後、それぞれの半導体チップ2はそのボンディングパッドに接続されたワイヤ16を介して支持部材7上の外部接続端子と接続される。
半導体チップ2を含む積層体を封止材17によって封止することにより、半導体装置100が得られる。
で表されるノボラック型マレイミド樹脂が挙げられる。式(IV)中のR5は、好ましくは、ベンゼン残基、トルエン残基、キシレン残基、ナフタレン残基、直鎖、分岐、若しくは環状アルキル基、又はこれらの混合基である。R5は、さらに好ましくは下記化学式で表される2価の有機基である。各式中、nは1〜10の整数である。
(PI−1)
撹拌機、温度計及び窒素置換装置を備えたフラスコ内に、5,5’−メチレンビス(アントラニル酸(MBAA)5.72g(0.02mol)、脂肪族エーテルジアミン(商品名「D−400」)13.57g(0.03mol)、1,1,3,3−テトラメチル−1,3−ビス(3−アミノプロピル)ジシロキサン(商品名「BY16−871EG」、東レ・ダウコーニング(株)製)2.48g(0.01mol)、及び1,4−ブタンジオール ビス(3−アミノプロピル)エーテル(商品名「B−12」、東京化成製、分子量204.31)8.17g(0.04mol)と、溶媒であるNMP110gを仕込み、撹拌して、これらジアミンを溶媒に溶解させた。
撹拌機、温度計及び窒素置換装置(窒素流入管)を備えた500mLフラスコ内に、ポリオキシプロピレンジアミン(商品名「D−2000」、分子量:約2000、BASF製)140g(0.07mol)、及び1,1,3,3−テトラメチル−1,3−ビス(3−アミノプロピル)ジシロキサン(商品名「BY16−871EG」、東レ・ダウコーニング(株)製)3.72g(0.015mol)に、ODPA31.0g(0.1mol)を、フラスコ内の溶液に少量ずつ添加した。添加終了後、室温で5時間撹拌した。その後、フラスコに水分受容器付きの還流冷却器を取り付け、窒素ガスを吹き込みながら溶液を180℃に昇温させて5時間保温し水を除去して、液状のポリイミド樹脂PI−2を得た。ポリイミド樹脂PI−2のGPC測定を行ったところ、標準ポリスチレン換算で重量平均分子量(Mw)は40000であった。また、ポリイミド樹脂PI−2のTgは20℃以下であった。
撹拌機、温度計及び窒素置換装置(窒素流入管)を備えた500mLフラスコ内に、ポリオキシプロピレンジアミン(商品名「D−2000」、分子量:約2000、BASF製)100g(0.05mol)、及び1,1,3,3−テトラメチル−1,3−ビス(3−アミノプロピル)ジシロキサン(商品名「BY16−871EG」、東レ・ダウコーニング(株)製)3.72g(0.015mol)、2,4−ジアミノ−6−[2’−ウンデシルイミダゾリル(1’)]エチル−s−トリアジン(商品名「C11Z−A」、四国化成(株)製)7.18g(0.02mol)に、ODPA31.0g(0.1mol)を、フラスコ内の溶液に少量ずつ添加した。添加終了後、室温で5時間撹拌した。その後、フラスコに水分受容器付きの還流冷却器を取り付け、窒素ガスを吹き込みながら溶液を180℃に昇温させて5時間保温し水を除去して、液状のポリイミド樹脂PI−3を得た。ポリイミド樹脂PI−3のGPC測定を行ったところ、標準ポリスチレン換算で重量平均分子量(Mw)は40000であった。また、ポリイミド樹脂PI−3のTgは20℃以下であった。
上記で得られたポリイミド樹脂PI−1、PI−2及びPI−3を用い、下記表1に示す組成比(単位:質量部)にて各成分を配合し、実施例1〜8及び比較例1〜6の接着剤組成物を得た。
(熱硬化性樹脂)
・YDF−8170C:東都化成社製、ビスフェノールF型ビスグリシジルエーテル(5%重量減少温度:270℃、粘度:1300mPa・s)
・630LSD:ジャパンエポキシレジン社製、グリシジルアミン型エポキシ樹脂(5%重量減少温度:240℃、粘度:600mPa・s)
(放射線重合性化合物)
・A−BPE4:新中村化学工業社製、エトキシ化ビスフェノールA型アクリレート(5%重量減少温度:330℃、粘度:980mPa・s)、
・M−140:東亜合成社製、2−(1,2−シクロヘキサカルボキシイミド)エチルアクリレート(5%重量減少温度:200℃、粘度:450mPa・s)
・AMP−20GY:新中村化学工業社製、フェノキシジエチレングリコールアクリレート(5%重量減少温度:175℃、粘度:16mPa・s)
(硬化促進剤)
・2PZCNS−PW:四国化成社製、1−シアノエチルー2−フェニルイミダゾリウムトリメリテイト(5%重量減少温度:220℃、平均粒子径:約4μm)
(光開始剤)
・I−651:チバ・ジャパン社製、2,2−ジメトキシ−1,2−ジフェニルエタン−1−オン(5%重量減少温度:170℃、i線吸光係数:400ml/gcm)
(熱ラジカル発生剤)
・パークミルD:日油社製、ジクミルパーオキサイド(1分間半減期温度:175℃)
(塗工溶媒)
・NMP:関東化学社製、N−メチル−2−ピロリドン
接着剤組成物をシリコンウエハ上にスピンコート(2000rpm/10s、4000rpm/20s)によって塗布し、得られた塗膜に、離型処理したPETフィルムをラミネートし、高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))により1000mJ/cm2で露光を行なった。露光後の接着剤組成物に関して、示差熱熱重量同時測定装置(エスアイアイ・ナノテクノロジー社製、商品名「TG/DTA6300」)を用いて、昇温速度10℃/min、窒素フロー(400ml/分)の条件で5%重量減少温度を測定した。
上記方法と同様にして得られた露光後の接着剤組成物をオーブン中で120℃1時間、次いで180℃3時間加熱することにより硬化させ、得られた硬化後の接着剤組成物に関して、上記と同様の条件で5%重量減少温度を測定した。
接着剤組成物の25℃における粘度を、東京計器製造所製のEHD型回転粘度計を用いて測定した。
接着剤組成物をシリコンウェハ上にスピンコート(2000rpm/10s、4000rpm/20s)によって塗布し、得られた塗膜(接着剤層)に、離型処理したPETフィルムをラミネートし、高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))により1000mJ/cm2で露光を行なった。その後、表面粗さ測定器(小坂研究所製)を用いて接着剤層の膜厚を測定した。
接着剤組成物をシリコンウェハ上にスピンコート(2000rpm/10s、4000rpm/20s)によって塗布し、得られた塗膜に、離型処理したPETフィルムをラミネートし、高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))により1000mJ/cm2で露光を行なった。その後、3×3mm角のシリコンチップをシリコンウェハから切り出した。切り出した接着剤層付きのシリコンチップを、予め準備した5×5mm角のシリコンチップ上に載せ、100gfで加圧しながら、120℃に加熱しながら2秒間圧着した。その後、120℃1時間、次いで180℃3時間オーブンで加熱しシリコンチップ同士が接着されたサンプルを得た。得られたサンプルについて、せん断接着力試験機「Dage−4000」(商品名)を用いて室温及び260℃でのせん断接着力を測定した。得られた測定値をせん断接着強度の値とした。
接着剤組成物をシリコンウェハ上にスピンコート(2000rpm/10s、4000rpm/20s)によって塗布し、得られた塗膜(接着剤層)に、離型処理したPETフィルムをラミネートし、高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))により1000mJ/cm2で露光を行なった。その後、レスカ社製のプローブタッキング試験機を用いて、プローブ直径:5.1mm、引き剥がし速度:10mm/s、接触荷重:100gf/cm2、接触時間:1sの条件で、30℃及び120℃における接着剤層表面のタック力を測定した。
Claims (7)
- 放射線重合性化合物と、光開始剤と、熱硬化性樹脂と、を含有し、半導体チップを接着するために用いられる接着剤組成物であって、
前記放射線重合性化合物が単官能(メタ)アクリレートを含み、前記単官能(メタ)アクリレートがイミド基を有する(メタ)アクリレートを含み、
接着剤層を形成している当該接着剤組成物を光照射によりBステージ化したとき、当該接着剤層表面のタック力が、30℃において200gf/cm2以下で、120℃において200gf/cm2以上である、接着剤組成物。 - 光照射によりBステージ化されたときの5%重量減少温度が150℃以上である、請求項1に記載の接着剤組成物。
- 光照射によりBステージ化される前の25℃における粘度が10〜30000mPa・sである、請求項1又は2に記載の接着剤組成物。
- 当該接着剤組成物により半導体チップを被着体に接着したとき、前記半導体チップと前記被着体とのせん断接着強度が260℃において0.2MPa以上である、請求項1〜3のいずれか一項に記載の接着剤組成物。
- 光照射によりBステージ化された後、さらに加熱により硬化されたときの5%重量減少温度が260℃以上である、請求項1〜4のいずれか一項に記載の接着剤組成物。
- 半導体ウェハの裏面に請求項1〜5のいずれか一項に記載の接着剤組成物を塗布する工程と、
塗布された前記接着剤組成物を光照射によりBステージ化する工程と、
前記半導体ウェハを、Bステージ化された前記接着剤組成物とともに切断して複数の半導体チップに切り分ける工程と、
前記半導体チップと支持部材又は他の半導体チップとを、それらの間に前記接着剤組成物を挟んで圧着することにより接着する工程と、
を備える半導体装置の製造方法。 - 請求項6に記載の製造方法により得ることのできる、半導体装置。
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JP5742501B2 (ja) * | 2011-06-17 | 2015-07-01 | 日立化成株式会社 | 接着剤層付き半導体チップの製造方法及び半導体装置の製造方法 |
DE102011118912A1 (de) * | 2011-11-18 | 2013-05-23 | Sram Deutschland Gmbh | Umwerfereinrichtung für eine Fahrradschaltung, insbesondere hintere Umwerfereinrichtung |
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