JP2009120830A - 接着シート及びこれを用いた半導体装置およびその製造方法 - Google Patents
接着シート及びこれを用いた半導体装置およびその製造方法 Download PDFInfo
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- JP2009120830A JP2009120830A JP2008274311A JP2008274311A JP2009120830A JP 2009120830 A JP2009120830 A JP 2009120830A JP 2008274311 A JP2008274311 A JP 2008274311A JP 2008274311 A JP2008274311 A JP 2008274311A JP 2009120830 A JP2009120830 A JP 2009120830A
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Abstract
【解決手段】厚さが5〜250μmの接着シートであって、樹脂成分として3種以上の異なった構造のエポキシ樹脂を含有し、そのうちの1種類以上が結晶性エポキシ樹脂である接着シート。
【選択図】図1
Description
本発明で使用する結晶性エポキシ樹脂の融点は、タック強度、基板の配線や半導体チップのワイヤ等の凹凸の充てんを考慮して、30℃以上130℃以下であることが好ましく、さらに40℃以上110℃未満が好ましい。融点が30℃未満であると40℃のタック強度が大きくなり貼付時のボイドを形成しやすくなり、130℃を超えると流動性が低下して凹凸を充てんできなくなるおそれがある。
シートの樹脂成分100重量部に対し、架橋性官能基を含み重量平均分子量が10万以上でTgが−50〜50℃である高分子量成分10〜40重量%と、
フィラー40〜180重量部と
を含む接着シートであるのが好ましい。
(実施例1)
(1)結晶性エポキシ樹脂として、スルフィド型エポキシ樹脂(東都化成株式会社製商品名YLSV−50TE、エポキシ当量175、融点45℃)を12.4重量部、(2)ビスフェノールF型エポキシ樹脂(エポキシ当量160、東都化成株式会社製商品名YDF−8170C)を12.4重量部、(3)クレゾールノボラック型エポキシ樹脂(エポキシ当量210、東都化成株式会社製商品名YDCN−703)を8.3重量部;
エポキシ樹脂の硬化剤としてフェノールノボラック樹脂(水酸基当量175、三井化学株式会社製商品名ミレックスXLC−LL)33重量部;
高分子量成分としてエポキシ基含有アクリル系共重合体であるエポキシ基含有アクリルゴム(重量平均分子量30万、グリシジルメタクリレート3重量%、Tgは−7℃、ナガセケムテックス株式会社製)17.9重量部;
硬化促進剤としてイミダゾール系硬化促進剤(四国化成工業株式会社製キュアゾール2PZ−CN)0.1重量部;
シリカフィラー(アドマファイン株式会社製、S0−C2、比重:2.2g/cm3、モース硬度7、平均粒径0.5μm、比表面積6.0m2/g)40.8重量部;
シランカップリング剤(日本ユニカー株式会社製商品名A−189)0.25重量部および同(日本ユニカー株式会社製商品名A−1160)0.5重量部;
からなる組成物に、シクロヘキサノンを加えて撹拌混合し、真空脱気して接着剤ワニスを得た。
(1)溶融粘度の測定法
評価用サンプルの測定値を再現性よく得るためには100〜300μmの厚さが好ましいため、上記で作製した単体厚み40μmの接着シートを適宜3〜7枚貼り合わせて評価用サンプルとした。また、貼り合わせる条件はサンプルによって異なるが、測定中に貼り合わせ面において剥離が生じないようにすればよく、通常その接着シートの硬化が進まない条件で貼り合わせた。
硬化前の基材フィルム付き接着シートの塗工した上面のタック強度を、レスカ株式会社製プローブタッキング試験機を用いて、JIS Z0237−1991に記載の方法(プローブ直径5.1mm、引き剥がし速度10mm/s、接触荷重100gf/cm2、接触時間1秒)により測定した。
ホットロールラミネーター(60℃、0.3m/分、0.3MPa)で幅10mmの接着シートとシリコンウエハを貼り合わせ、その後、接着シートをTOYOBALWIN製UTM−4−100型テンシロンを用いて、25℃の雰囲気中で、90°の角度で、50mm/分の引張り速度で剥がしたときの90°ピール強度を求めた。90°ピール強度が30N/m以上の場合はラミネート性良好(〇)、90°ピール強度が30N/m未満の場合はラミネート性不良(×)とした。
接着シートの両面に厚み50μmのポリイミドフィルムを、ホットロールラミネーター(60℃、0.3m/分、0.3MPa)を用いて貼りあわせ、その接着シートをプレ硬化した後、最終的には170℃で5時間硬化した。このサンプルの10mm×10mm試験片を6個用意して、耐熱性を調べた。耐熱性の評価方法は、吸湿はんだ耐熱試験で85℃/相対湿度85%の環境下に48時間放置したサンプルを260℃〜300℃のはんだ槽中に浮かべ120秒まででの膨れ等の異常発生を調べた。全てのサンプルで異常が観測されたものを×、異常が発生するサンプルとしないサンプルが観測されたものを△、全てのサンプルで異常が観測されなかったものを○とした。
接着シート付き半導体チップ(10mm×10mm)と、厚み25μmのポリイミドフィルムを基材に用いた高さ10μmの凹凸を有する配線基板を0.2MPa、3秒、100℃の条件で貼り合せた半導体装置サンプルを作製し、充てん性を評価した。半導体チップ中央部の断面を研磨し、光学顕微鏡でボイドの有無を調査した。直径1μm以上のボイドのないものを○、あるものを×とした。
A1 半導体チップ
a 第1の接着シート
b 接着シート
b’ 第2の接着シート
b1 接着剤
c 多層接着シート
1 ダイシングテープ
2 ワイヤ
3 基板
4 配線
5 基材フィルム
Claims (8)
- 厚さが5〜250μmの接着シートであって、樹脂成分として3種以上の異なった構造のエポキシ樹脂を含有し、そのうちの1種類以上が結晶性エポキシ樹脂である接着シート。
- 結晶性エポキシ樹脂の融点が30℃以上130℃以下である請求項1記載の接着シート。
- 硬化前の100℃の溶融粘度が100Pa・s以上、25,000Pa・s以下であり、25℃におけるタック強度が8gf以上30gf以下、40℃におけるタック強度が20gf以上100gf以下である請求項1または2に記載の接着シート。
- 樹脂成分100重量部に対し、フィラー40〜180重量部を含有しており、かつ樹脂成分中に、架橋性官能基を含む重量平均分子量が10万以上かつTgが−50〜50℃である高分子量成分10重量%以上を含む請求項1〜3いずれかに記載の接着シート。
- 硬化前の25℃での動的粘弾性測定による貯蔵弾性率が200〜3000MPaであり、80℃での動的粘弾性測定による貯蔵弾性率が0.1〜10MPaである請求項1〜4いずれかに記載の接着シート。
- 半導体装置の製造工程のうち、ウエハ、接着シート及びダイシングテープを0℃〜80℃で貼り合わせ、回転刃で少なくともウエハ及び接着シートを同時に切断し、接着シート付き半導体チップを得るダイシング工程、およびその後、凹凸を有する基板又は半導体チップに当該接着シート付き半導体チップを荷重0.001〜1MPaで接着し、接着シートで凹凸を充てんするダイボンド工程に使用する請求項1〜5いずれかに記載の接着シート。
- 請求項1〜6いずれかに記載の接着シートを用いて、半導体チップと基板、又は半導体チップと半導体チップとを接着してなる半導体装置。
- ウエハ、請求項1〜5いずれかに記載の接着シート及びダイシングテープを0℃〜80℃で貼り合わせ、回転刃で少なくともウエハ及び接着シートを同時に切断し、接着シート付き半導体チップを得るダイシング工程、およびその後、凹凸を有する基板又は半導体チップに当該接着シート付き半導体チップを荷重0.001〜1MPaで接着し、接着シートで凹凸を充てんするダイボンド工程を含む半導体装置の製造方法。
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Cited By (25)
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WO2011058997A1 (ja) * | 2009-11-13 | 2011-05-19 | 日立化成工業株式会社 | 半導体用接着剤組成物、半導体装置及び半導体装置の製造方法 |
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KR20210008341A (ko) | 2018-05-15 | 2021-01-21 | 쇼와덴코머티리얼즈가부시끼가이샤 | 반도체 장치, 그리고 그 제조에 사용하는 열경화성 수지 조성물 및 다이싱 다이 본딩 일체형 테이프 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001279217A (ja) * | 2000-03-31 | 2001-10-10 | Hitachi Chem Co Ltd | 接着剤組成物、難燃性接着剤組成物、接着フィルム、半導体搭載用配線基板及び半導体装置とその製造方法 |
JP2004289037A (ja) * | 2003-03-25 | 2004-10-14 | Sumitomo Bakelite Co Ltd | ダイボンディング用フィルム状接着剤並びにそれを用いた半導体装置の製造方法及び半導体装置 |
JP2005203401A (ja) * | 2004-01-13 | 2005-07-28 | Sumitomo Bakelite Co Ltd | 半導体装置の製造方法および半導体装置 |
WO2005103180A1 (ja) * | 2004-04-20 | 2005-11-03 | Hitachi Chemical Co., Ltd. | 接着シート、半導体装置、及び半導体装置の製造方法 |
JP2006165074A (ja) * | 2004-12-03 | 2006-06-22 | Sumitomo Bakelite Co Ltd | ダイシングシート機能付きダイアタッチフィルム及びそれを用いた半導体装置の製造方法 |
JP2006237483A (ja) * | 2005-02-28 | 2006-09-07 | Sumitomo Bakelite Co Ltd | ダイシングシート機能付きダイアタッチフィルム及びそれを用いた半導体装置の製造方法及び半導体装置。 |
JP2007043198A (ja) * | 2006-10-20 | 2007-02-15 | Sumitomo Bakelite Co Ltd | ダイボンディング用フィルム状接着剤並びにそれを用いた半導体装置の製造方法及び半導体装 |
JP2007103954A (ja) * | 2006-10-20 | 2007-04-19 | Sumitomo Bakelite Co Ltd | 半導体用接着フィルム、ダイシングフィルムおよび半導体装置 |
-
2008
- 2008-10-24 JP JP2008274311A patent/JP5524465B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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