JP5477389B2 - 半導体用接着剤組成物、半導体装置及び半導体装置の製造方法 - Google Patents
半導体用接着剤組成物、半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP5477389B2 JP5477389B2 JP2011540522A JP2011540522A JP5477389B2 JP 5477389 B2 JP5477389 B2 JP 5477389B2 JP 2011540522 A JP2011540522 A JP 2011540522A JP 2011540522 A JP2011540522 A JP 2011540522A JP 5477389 B2 JP5477389 B2 JP 5477389B2
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Images
Classifications
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- H—ELECTRICITY
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
工程1:半導体ウェハ1内に形成された半導体チップ(半導体素子)2の回路面S1上にはく離可能な粘着テープ(バックグラインドテープ)4を積層する(図1を参照)。
工程2:半導体ウェハ1を回路面S1とは反対側の面(裏面)S2から研磨して半導体ウェハ1を薄くする(図2を参照)。
工程3:半導体ウェハ1の回路面S1とは反対側の面S2に本発明の半導体用接着剤組成物5を塗布する(図3及び4を参照)。
工程4:塗布された接着剤組成物からなる接着剤層5側から露光を行い、接着剤層5をBステージ化する(図5を参照)。
工程5:接着剤層5上にはく離可能な粘着テープ(ダイシングテープ)6を積層する(図6を参照)。
工程6:はく離可能な粘着テープ4をはく離する(図7を参照)。
工程7:半導体ウェハ1をダイシングにより複数の半導体チップ(半導体素子)2に切り分ける(図8を参照)。
工程8:半導体チップ2をピックアップして半導体装置用の支持部材(半導体素子搭載用支持部材)7または半導体チップに圧着(マウント)する(図9、10、11を参照)。
工程9:マウントされた半導体チップを、ワイヤ16を介して支持部材7上の外部接続端子と接続する(図12を参照)。
工程10:複数の半導体チップ2を含む積層体を封止材17によって封止して、半導体装置100を得る(図13を参照)。
表面に回路を形成した半導体ウェハ1の回路面S1側にはく離可能な粘着テープ4を積層する。粘着テープ4の積層は、予めフィルム状に成形されたフィルムをラミネートする方法により行なうことができる。
半導体ウェハ1の粘着テープ4とは反対側の面S2を研磨して、半導体ウェハ1を所定の厚さまで薄くする。研磨は、粘着テープ4によって半導体ウェハ1を研磨用の治具に固定した状態で、グラインド装置8を用いて行う。
半導体ウェハ1の回路面S1とは反対側の面S2に本発明の半導体用接着剤組成物5を塗布する。塗布は、ボックス20内で、粘着テープ4が貼り付けられた半導体ウェハ1を治具21に固定した状態で行うことができる。塗布方法は、印刷法、スピンコート法、スプレーコート法、ジェットディスペンス法及びインクジェット法などから選ばれる。これらの中でも、薄膜化及び膜厚均一性の観点から、スピンコート法(図3)やスプレーコート法(図4)が好ましい。スピンコート装置が有する吸着台には穴が形成されていてもよいし、吸着台がメッシュ状であってもよい。吸着痕が残りにくい点から、吸着台はメッシュ状であることが好ましい。スピンコート法による塗布は、ウェハのうねり、及びエッジ部の盛り上がりを防止するために、500〜5000rpmの回転数で行うことが好ましい。同様の観点から、回転数は1000〜4000rpmがさらに好ましい。接着剤組成物の粘度を調整する目的でスピンコート台に温度調節器を備えることもできる。
塗布により本発明の半導体用接着剤組成物から形成された接着剤層5側から活性光線(典型的には紫外線)を照射して、接着剤組成物をBステージ化する。これにより接着剤層5が半導体ウェハ1上に固定されるとともに、接着剤層5表面のタックを低減することができる。露光は、真空下、窒素下、空気下などの雰囲気下で行なうことができる。酸素阻害を低減するために、離形処理されたPETフィルムやポリプロピレンフィルムなどの基材を接着剤層5上に積層した状態で、露光することもできる。また、ポリ塩化ビニル、ポリオレフィンや粘着テープ(ダイシングテープ)6を接着剤層5上に積層した状態で露光することにより工程5を簡略化することもできる。また、パターニングされたマスクを介して露光を行うこともできる。パターニングされたマスクを用いることにより、熱圧着時の流動性が異なる接着剤層を形成させることができる。露光量は、タック低減及びタクトタイムの観点から、20〜2000mJ/cm2が好ましい。また、Bステージ化後のタック低減及びアウトガス低減を目的に、露光後100℃以下の温度で加熱を行なってもよい。
露光後、接着剤層5にダイシングテープなどのはく離可能な粘着テープ6を貼り付ける。粘着テープ6は、予めフィルム状に成形された粘着テープをラミネートする方法により貼り付けることができる。
続いて、半導体ウェハ1の回路面に貼り付けられた粘着テープ4をはく離する。例えば、活性光線(典型的には紫外線)を照射することによって粘着性が低下する粘着テープを使用し、粘着テープ4側から露光した後、これをはく離することができる。
ダイシングラインDに沿って半導体ウェハ1を接着剤層5とともに切断する。このダイシングにより、半導体ウェハ1が、それぞれの裏面に接着剤層5が設けられた複数の半導体チップ2に切り分けられる。ダイシングは、粘着テープ(ダイシングテープ)6によって全体をフレーム(ウェハリング)10に固定した状態でダイシングブレード11を用いて行われる。
ダイシングの後、切り分けられた半導体チップ2を、ダイボンド装置12によって接着剤層5とともにピックアップし、すなわち接着剤層付き半導体素子をピックアップし、半導体装置用の支持部材(半導体素子搭載用支持部材)7または他の半導体チップ2に圧着(マウント)する。圧着は加熱しながら行なうことが好ましい。
工程8の後、それぞれの半導体チップ2はそのボンディングパッドに接続されたワイヤ16を介して支持部材7上の外部接続端子と接続される。
半導体チップ2を含む積層体を封止材17によって封止することにより、半導体装置100が得られる。
(PI−1)
撹拌機、温度計及び窒素置換装置を備えたフラスコ内に、ジアミンであるMBAA(和歌山精化製、商品名「MBAA」、分子量286)5.72g(0.02mol)、「D−400」(商品名「D−400」(分子量:433)、BASF製)13.57g(0.03mol)、1,1,3,3−テトラメチル−1,3−ビス(3−アミノプロピル)ジシロキサン(商品名「BY16−871EG」、東レ・ダウコーニング(株)製)2.48g(0.01mol)、及び1,4−ブタンジオール ビス(3−アミノプロピル)エーテル(商品名「B−12」、東京化成製、分子量204.31)8.17g(0.04mol)と、溶媒であるNMP110gを仕込み、撹拌してジアミンを溶媒に溶解させた。
撹拌機、温度計及び窒素置換装置(窒素流入管)を備えた500mLフラスコ内に、ジアミンであるポリオキシプロピレンジアミン(商品名「D−2000」(分子量:約2000)、BASF製)140g(0.07mol)、及び1,1,3,3−テトラメチル−1,3−ビス(3−アミノプロピル)ジシロキサン(商品名「BY16−871EG」、東レ・ダウコーニング(株)製)3.72g(0.015mol)に、ODPA31.0g(0.1mol)を、フラスコ内の溶液に少量ずつ添加した。添加終了後、室温で5時間撹拌した。その後、フラスコに水分受容器付きの還流冷却器を取り付け、窒素ガスを吹き込みながら溶液を180℃に昇温させて5時間保温し水を除去して、液状ポリイミド樹脂(PI−2)を得た。(PI−2)のGPC測定を行ったところ、ポリスチレン換算で重量平均分子量(Mw)=40000であった。また、(PI−2)のTgは20℃以下であった。
上記で得られたポリイミド樹脂(PI−1)及び(PI−2)を用いて、下記表1〜3に示す組成比(単位:質量部)にて各成分を配合し、実施例1〜18の接着剤組成物及び比較例1〜4の接着剤組成物(接着剤層形成用組成物)を得た。
M−140:東亜合成社製、2−(1,2−シクロヘキサカルボキシイミド)エチルアクリレート(イミド基含有単官能アクリレート、5%重量減少温度:200℃、25℃での粘度:450mPa・s)。
AMP−20GY:新中村化学工業社製、フェノキシジエチレングリコールアクリレート(単官能アクリレート、5%重量減少温度:175℃、25℃での粘度:16mPa・s)。
702A:新中村化学工業社製、2−ヒドロキシ−3−フェノキシプロピルアクリレート(水酸基含有単官能アクリレート、5%重量減少温度:175℃、粘度:160mPa・s)。
401P:新中村化学工業社製、o−フェニルフェノールグリシジルエーテルアクリレート(水酸基含有単官能アクリレート、5%重量減少温度:160℃、粘度:10000mPa・s)。
HOA−MPE:共栄社化学社製、2−メタクリロイロキシエチル−2−ヒドロキシエチル−フタル酸(水酸基含有単官能アクリレート、5%重量減少温度:175℃、粘度:1200mPa・s)。
HO−MPP:共栄社化学社製、2−メタクリロイロキシエチル−2−ヒドロキシプロピルフタレート(水酸基含有単官能アクリレート、5%重量減少温度:175℃、粘度:1000mPa・s)。
PQMA::昭和高分子社製、4−ヒドロキシフェニルメタクリレート(水酸基含有単官能アクリレート、5%重量減少温度:>260℃、固形)。
A−BPE4:新中村化学工業社製、エトキシ化ビスフェノールA型アクリレート(2官能アクリレート、5%重量減少温度:330℃、25℃での粘度:980mPa・s)。
I−651:チバ・ジャパン社製、2,2−ジメトキシ−1,2−ジフェニルエタン−1−オン(5%重量減少温度:170℃、i線吸光係数:400ml/gcm)。
I−379EG:チバ・ジャパン社製、2−ジメチルアミノ−2−(4−メチルーベンジル)−1−(4−モルフォリン−4−イルーフェニル)−ブタンー1−オン(5%重量減少温度:260℃、i線吸光係数:8000ml/gcm)。
I−907:チバ・ジャパン社製、2−メチル−1−(4−(メチルチオ)フェニル)−2−モルフォリノプロパン−1―オン(5%重量減少温度:220℃、365nmでの分子吸光係数:450ml/g・cm)。
I−OXE02:チバ・ジャパン社製、エタノン,1−[9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル]−,1−(o−アセチルオキシム)、(5%重量減少温度:370℃、365nmでの分子吸光係数:7700ml/g・cm)。
YDF−8170C:東都化成社製、ビスフェノールF型ビスグリシジルエーテル(5%重量減少温度:270℃、25℃での粘度:1300mPa・s)。
630LSD:ジャパンエポキシレジン社製、グリシジルアミン型エポキシ樹脂(5%重量減少温度:240℃、25℃での粘度:600mPa・s)。
1032H60:ジャパンエポキシレジン社製、トリス(ヒドロキシフェニル)メタン型固形エポキシ樹脂(5%重量減少温度:350℃、固形、融点60℃)。
2PHZ−PW:四国化成社製、2−フェニル−4,5−ジヒドロキシメチルイミダゾール(平均粒子径:約3μm)。
1B2PZ:四国化成社製、1−ベンジル−2−フェニルイミダゾール。
パークミルD:日油社製、ジクミルパーオキサイド(1分間半減期温度:175℃)。
300Lセパラブルフラスコに、5−ノルボルネン−2,3−ジカルボン酸無水物(日立化成工業(株)製、商品名:無水ハイミック酸)100gとトルエン130gを入れ、攪拌機、窒素導入管、滴下ろうと、温度計を設置した。ここに窒素を40ml/分で導入、攪拌しながら、モノエタノールアミン38.4gを滴下ろうとを用いて滴下した。滴下終了後、滴下ろうとをDean−Stark水分定量器に替えて加温を開始し、液温が100℃となるようにして3時間還流した。
東京計器製造所製のEHD型回転粘度計を用い、サンプル量0.4mL、3°コーンの条件下、25℃における粘度を測定した。
(A)成分にI−379EG(チバ・ジャパン社製)を組成物全量基準で3質量%となる割合で溶解させた組成物を、PET(ポリエチレンテレフタレート)フィルム上に膜厚30μmとなるように塗布し、この塗膜に、高精度平行露光機(オーク製作所製、商品名:EXM−1172−B−∞)によって1000mJ/cm2で露光して得られたフィルムを膜厚150μmとなるように積層して得られた積層体について、粘弾性測定装置(レオメトリックス・サイエンティフィック・エフ・イー(株)製、商品名:ARES)を用いて−50℃〜200℃におけるtanδピーク温度を測定し、(A)成分の重合体のTgを求めた。なお、測定プレートは、直径8mmの平行プレートを用い、測定条件は、昇温速度5℃/min、測定温度−50℃〜200℃、周波数1Hzとした。
接着剤組成物をシリコンウェハ上にスピンコート(2000rpm/10s、更に4000rpm/20s)によって塗布し、得られた塗膜に、離型処理したPETフィルムをラミネートし、高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))により1000mJ/cm2で露光を行なう。その後、表面粗さ測定器(小坂研究所製)を用いて接着剤層の厚みを測定した。
接着剤組成物をシリコンウェハ上にスピンコート(2000rpm/10s、更に4000rpm/20s)によって塗布し、得られた塗膜に、離型処理したPETフィルムをラミネートし、高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名)、強度:13mW/cm2)により1000mJ/cm2で露光を行なう。その後、30℃での表面のタック強度をレスカ社製のプローブタッキング試験機を用いて、プローブ直径:5.1mm、引き剥がし速度:10mm/s、接触荷重:100gf/cm2、接触時間:1sにより、30℃におけるタック力を5回測定し、その平均値を算出した。
接着剤組成物をシリコンウェハ上にスピンコート(2000rpm/10s、更に4000rpm/20s)によって塗布した。得られた塗膜に、室温空気下で高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))により1000mJ/cm2で露光を行なった。その後、レスカ社製のプローブタッキング試験機を用いて、プローブ直径:5.1mm、引き剥がし速度:10mm/s、接触荷重:100gf/cm2、接触時間:1sにより、30℃での接着剤層表面のタック強度を5回測定し、その平均値を算出した。
接着剤組成物をPETフィルム上に膜厚50μmとなるように塗布する。得られた塗膜に、室温空気下で高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))により1000mJ/cm2で露光を行なった。得られた接着シートをテフロン(登録商標)シート上に、接着剤層をテフロン(登録商標)シート側にしてロール(温度60℃、線圧4kgf/cm、送り速度0.5m/分)で加圧することによって厚みが約200μmとなるように積層した。得られたサンプルを粘弾性測定装置(レオメトリックス・サイエンティフィック・エフ・イー株式会社製、商品名:ARES)を用いて測定した。測定プレートは直径25mmの平行プレート、測定条件は昇温10℃/min、周波数1Hzに設定した。20℃〜200℃での溶融粘度の最低値を最低溶融粘度とした。
接着剤組成物をシリコンウェハ上にスピンコート(2000rpm/10s、更に4000rpm/20s)によって塗布した。得られた塗膜に、離型処理したPETフィルムをラミネートし、高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))により1000mJ/cm2で露光を行なった後、3×3mm角にシリコンウェハを切り出した。切り出した接着剤付きシリコンチップを予め5×5mm角に切り出したシリコンチップ上に載せ、200gfで加圧しながら、120℃で2秒間圧着した。得られたサンプルについて、せん断接着力試験機「Dage−4000」(商品名)を用いて室温でのせん断接着力を測定し、1MPa以上であるものを「A」、1MPaを下回るものを「C」とした。
接着剤組成物をシリコンウェハ上にスピンコート(2000rpm/10s、更に4000rpm/20s)によって塗布した。得られた塗膜に、離型処理したPETフィルムをラミネートし、高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))により1000mJ/cm2で露光を行なう。その後、得られた接着剤を示差熱熱重量同時測定装置(エスアイアイ・ナノテクノロジー社製、商品名「TG/DTA6300」)を用いて、昇温速度10℃/min、窒素フロー(400ml/分)下で5%重量減少温度を測定した。
接着剤組成物をシリコンウェハ上にスピンコート(2000rpm/10s、更に4000rpm/20s)によって塗布した。得られた塗膜に、離型処理したPETフィルムをラミネートし、高精度平行露光機(オーク製作所製、「EXM−1172−B−∞」(商品名))により1000mJ/cm2で露光を行なった後、3×3mm角にシリコンウェハを切り出した。切り出した接着剤付きシリコンチップを予め5×5mm角に切り出したシリコンチップ上に載せ、100gfで加圧しながら、120℃で2秒間圧着した。その後、140℃、1時間、次いで180℃、3時間オーブンで加熱し接着サンプルを得た。得られたサンプルについて、せん断接着力試験機「Dage−4000」(商品名)を用いて260℃でのせん断接着力を測定した。これをせん断接着強度の値とした。
Claims (13)
- (A)放射線重合性化合物、(B)光開始剤、及び(C)熱硬化性樹脂、を含む半導体用接着剤組成物であって、
前記(A)成分が、25℃で液状であり且つ分子内に1つの炭素−炭素二重結合を有する化合物を含み、
前記半導体用接着剤組成物が25℃で液状であり且つ溶剤の含有量が5質量%以下であり、25℃での粘度が10〜30000mPa・sである、半導体用接着剤組成物。 - 前記(A)成分がイミド基又は水酸基を有する単官能(メタ)アクリレートである、請求項1に記載の半導体用接着剤組成物。
- 前記(A)成分の5%重量減少温度が150℃以上である、請求項1又は2に記載の半導体用接着剤組成物。
- 前記(A)成分の25℃での粘度が1000mPa・s以下である、請求項1〜3のいずれか一項に記載の半導体用接着剤組成物。
- 前記(A)成分を重合して得られる重合体のTgが100℃以下である、請求項1〜4のいずれか一項に記載の半導体用接着剤組成物。
- (D)熱ラジカル発生剤を更に含有する、請求項1〜5のいずれか一項に記載の半導体用接着剤組成物。
- 前記半導体用接着剤組成物が、前記(A)成分として単官能(メタ)アクリレートを(A)成分全量に対して20〜100質量%の割合で含む、請求項1〜6のいずれか一項に記載の半導体用接着剤組成物。
- 前記半導体用接着剤組成物が、該組成物からなる接着剤層を光照射によりBステージ化したときに5%重量減少温度が150℃以上となるものである、請求項1〜7のいずれか一項に記載の半導体用接着剤組成物。
- 前記半導体用接着剤組成物が、該組成物からなる接着剤層を光照射によりBステージ化し、更に加熱硬化したときに5%重量減少温度が260℃以上となるものである、請求項1〜8のいずれか一項に記載の半導体用接着剤組成物。
- 半導体素子同士及び/又は半導体素子と半導体素子搭載用支持部材とが請求項1〜9のいずれか一項に記載の半導体用接着剤組成物により接着された構造を有する、半導体装置。
- 半導体ウェハの一方面上に、請求項1〜9のいずれか一項に記載の半導体用接着剤組成物を塗布して接着剤層を設ける工程と、
前記接着剤層に光照射する工程と、
光照射された前記接着剤層とともに前記半導体ウェハを切断して接着剤層付き半導体素子を得る工程と、
前記接着剤層付き半導体素子と、他の半導体素子又は半導体素子搭載用支持部材とを、前記接着剤層付き半導体素子の接着剤層を挟んで圧着することにより接着する工程と、を備える、半導体装置の製造方法。 - 半導体素子に、請求項1〜9のいずれか一項に記載の半導体用接着剤組成物を塗布して接着剤層を設ける工程と、
前記接着剤層に光照射する工程と、
光照射された前記接着剤層を有する前記半導体素子と、他の半導体素子又は半導体素子搭載用支持部材とを、光照射された前記接着剤層を挟んで圧着することにより接着する工程と、を備える、半導体装置の製造方法。 - 半導体素子搭載用支持部材に、請求項1〜9のいずれか一項に記載の半導体用接着剤組成物を塗布して接着剤層を設ける工程と、
前記接着剤層に光照射する工程と、
光照射された前記接着剤層を有する前記半導体素子搭載用支持部材と、半導体素子とを、光照射された前記接着剤層を挟んで圧着することにより接着する工程と、を備える、半導体装置の製造方法。
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