CN102985505A - 感光性粘合剂组合物、感光性粘合剂膜和使用它们的半导体装置 - Google Patents
感光性粘合剂组合物、感光性粘合剂膜和使用它们的半导体装置 Download PDFInfo
- Publication number
- CN102985505A CN102985505A CN201180033589XA CN201180033589A CN102985505A CN 102985505 A CN102985505 A CN 102985505A CN 201180033589X A CN201180033589X A CN 201180033589XA CN 201180033589 A CN201180033589 A CN 201180033589A CN 102985505 A CN102985505 A CN 102985505A
- Authority
- CN
- China
- Prior art keywords
- group
- photosensitivity
- general formula
- binder composition
- binder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 110
- 239000004065 semiconductor Substances 0.000 title claims description 67
- 239000000853 adhesive Substances 0.000 title abstract description 5
- 230000001070 adhesive effect Effects 0.000 title abstract description 5
- 239000002313 adhesive film Substances 0.000 title 1
- 229920001721 polyimide Polymers 0.000 claims abstract description 68
- 239000004642 Polyimide Substances 0.000 claims abstract description 66
- 150000001875 compounds Chemical class 0.000 claims abstract description 36
- 239000004593 Epoxy Substances 0.000 claims abstract description 26
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 141
- 230000036211 photosensitivity Effects 0.000 claims description 141
- 239000011230 binding agent Substances 0.000 claims description 138
- -1 glycidyl group amine Chemical class 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 38
- 239000003518 caustics Substances 0.000 claims description 36
- 239000003795 chemical substances by application Substances 0.000 claims description 22
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 16
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 15
- 125000004432 carbon atom Chemical group C* 0.000 claims description 14
- 125000000962 organic group Chemical group 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 10
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 125000001118 alkylidene group Chemical group 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 8
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 125000004390 alkyl sulfonyl group Chemical group 0.000 claims description 4
- 125000000101 thioether group Chemical group 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- 125000003968 arylidene group Chemical group [H]C(c)=* 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 66
- 230000009477 glass transition Effects 0.000 abstract 1
- 239000003999 initiator Substances 0.000 abstract 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 24
- 238000011161 development Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 238000000576 coating method Methods 0.000 description 17
- 238000001035 drying Methods 0.000 description 17
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 16
- 229920005989 resin Polymers 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 15
- 239000000126 substance Substances 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 14
- 150000003949 imides Chemical group 0.000 description 14
- 239000002966 varnish Substances 0.000 description 14
- 239000003153 chemical reaction reagent Substances 0.000 description 13
- 239000010954 inorganic particle Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 150000008064 anhydrides Chemical class 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 150000004985 diamines Chemical class 0.000 description 11
- 238000007669 thermal treatment Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 10
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 10
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 9
- 239000012528 membrane Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 230000004304 visual acuity Effects 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 8
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 8
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 8
- 150000002923 oximes Chemical class 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- YVNRUPSDZZZUQJ-UHFFFAOYSA-N [O].NC1=CC=CC=C1 Chemical compound [O].NC1=CC=CC=C1 YVNRUPSDZZZUQJ-UHFFFAOYSA-N 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 6
- 238000002788 crimping Methods 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 239000006087 Silane Coupling Agent Substances 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 239000011164 primary particle Substances 0.000 description 5
- 239000001294 propane Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 206010013786 Dry skin Diseases 0.000 description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 4
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000012965 benzophenone Substances 0.000 description 4
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 4
- 229940116333 ethyl lactate Drugs 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 3
- 229940018563 3-aminophenol Drugs 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N acetone Substances CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 238000007334 copolymerization reaction Methods 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000007761 roller coating Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- LAGVOJJKZPIRMS-UHFFFAOYSA-N (1,2,2,6,6-pentamethylpiperidin-3-yl) 2-methylprop-2-enoate Chemical compound CN1C(C)(C)CCC(OC(=O)C(C)=C)C1(C)C LAGVOJJKZPIRMS-UHFFFAOYSA-N 0.000 description 2
- AJOJTMNIQSTBAP-UHFFFAOYSA-N (1,2,2,6,6-pentamethylpiperidin-3-yl) prop-2-enoate Chemical compound CN1C(C)(C)CCC(OC(=O)C=C)C1(C)C AJOJTMNIQSTBAP-UHFFFAOYSA-N 0.000 description 2
- SEOSQBZZSQXYDO-UHFFFAOYSA-N (2,2,6,6-tetramethylpiperidin-1-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)ON1C(C)(C)CCCC1(C)C SEOSQBZZSQXYDO-UHFFFAOYSA-N 0.000 description 2
- GIIUJJXXMYYQQD-UHFFFAOYSA-N (2,2,6,6-tetramethylpiperidin-1-yl) prop-2-enoate Chemical compound CC1(C)CCCC(C)(C)N1OC(=O)C=C GIIUJJXXMYYQQD-UHFFFAOYSA-N 0.000 description 2
- JHPBZFOKBAGZBL-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylprop-2-enoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)=C JHPBZFOKBAGZBL-UHFFFAOYSA-N 0.000 description 2
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 2
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 2
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- PWMWNFMRSKOCEY-UHFFFAOYSA-N 1-Phenyl-1,2-ethanediol Chemical compound OCC(O)C1=CC=CC=C1 PWMWNFMRSKOCEY-UHFFFAOYSA-N 0.000 description 2
- LRZPQLZONWIQOJ-UHFFFAOYSA-N 10-(2-methylprop-2-enoyloxy)decyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCCCCCOC(=O)C(C)=C LRZPQLZONWIQOJ-UHFFFAOYSA-N 0.000 description 2
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- CCJAYIGMMRQRAO-UHFFFAOYSA-N 2-[4-[(2-hydroxyphenyl)methylideneamino]butyliminomethyl]phenol Chemical compound OC1=CC=CC=C1C=NCCCCN=CC1=CC=CC=C1O CCJAYIGMMRQRAO-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 2
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 2
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 2
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 2
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 2
- ZMPZWXKBGSQATE-UHFFFAOYSA-N 3-(4-aminophenyl)sulfonylaniline Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=CC(N)=C1 ZMPZWXKBGSQATE-UHFFFAOYSA-N 0.000 description 2
- VAJVDSVGBWFCLW-UHFFFAOYSA-N 3-Phenyl-1-propanol Chemical compound OCCCC1=CC=CC=C1 VAJVDSVGBWFCLW-UHFFFAOYSA-N 0.000 description 2
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 2
- FGWQCROGAHMWSU-UHFFFAOYSA-N 3-[(4-aminophenyl)methyl]aniline Chemical compound C1=CC(N)=CC=C1CC1=CC=CC(N)=C1 FGWQCROGAHMWSU-UHFFFAOYSA-N 0.000 description 2
- ZSEADYMLKBVVTB-UHFFFAOYSA-N 3-[methyl(trimethylsilyloxy)silyl]propan-1-amine Chemical class C[SiH](CCCN)O[Si](C)(C)C ZSEADYMLKBVVTB-UHFFFAOYSA-N 0.000 description 2
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 2
- AIVVXPSKEVWKMY-UHFFFAOYSA-N 4-(3,4-dicarboxyphenoxy)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 AIVVXPSKEVWKMY-UHFFFAOYSA-N 0.000 description 2
- DVGXDSPMPDANGA-UHFFFAOYSA-N 4-(9h-fluoren-1-yl)aniline Chemical class C1=CC(N)=CC=C1C1=CC=CC2=C1CC1=CC=CC=C12 DVGXDSPMPDANGA-UHFFFAOYSA-N 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- VRJHQPZVIGNGMX-UHFFFAOYSA-N 4-piperidinone Chemical compound O=C1CCNCC1 VRJHQPZVIGNGMX-UHFFFAOYSA-N 0.000 description 2
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 2
- QXAMGWKESXGGNV-UHFFFAOYSA-N 7-(diethylamino)-1-benzopyran-2-one Chemical compound C1=CC(=O)OC2=CC(N(CC)CC)=CC=C21 QXAMGWKESXGGNV-UHFFFAOYSA-N 0.000 description 2
- YJVIKVWFGPLAFS-UHFFFAOYSA-N 9-(2-methylprop-2-enoyloxy)nonyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCCCCOC(=O)C(C)=C YJVIKVWFGPLAFS-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- ARIYRHIJWJSTHQ-UHFFFAOYSA-N C1(=CC=CC=C1)S(=O)(=O)C1=CC=CC=C1.[O].NC=1C=CC=CC1 Chemical compound C1(=CC=CC=C1)S(=O)(=O)C1=CC=CC=C1.[O].NC=1C=CC=CC1 ARIYRHIJWJSTHQ-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 241000723346 Cinnamomum camphora Species 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- DYUQAZSOFZSPHD-UHFFFAOYSA-N Phenylpropyl alcohol Natural products CCC(O)C1=CC=CC=C1 DYUQAZSOFZSPHD-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- IAXXETNIOYFMLW-COPLHBTASA-N [(1s,3s,4s)-4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl] 2-methylprop-2-enoate Chemical compound C1C[C@]2(C)[C@@H](OC(=O)C(=C)C)C[C@H]1C2(C)C IAXXETNIOYFMLW-COPLHBTASA-N 0.000 description 2
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 2
- ZCZFEIZSYJAXKS-UHFFFAOYSA-N [3-hydroxy-2,2-bis(hydroxymethyl)propyl] prop-2-enoate Chemical compound OCC(CO)(CO)COC(=O)C=C ZCZFEIZSYJAXKS-UHFFFAOYSA-N 0.000 description 2
- SSOONFBDIYMPEU-UHFFFAOYSA-N [3-hydroxy-2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propyl] prop-2-enoate Chemical compound OCC(CO)(CO)COCC(CO)(CO)COC(=O)C=C SSOONFBDIYMPEU-UHFFFAOYSA-N 0.000 description 2
- FHLPGTXWCFQMIU-UHFFFAOYSA-N [4-[2-(4-prop-2-enoyloxyphenyl)propan-2-yl]phenyl] prop-2-enoate Chemical class C=1C=C(OC(=O)C=C)C=CC=1C(C)(C)C1=CC=C(OC(=O)C=C)C=C1 FHLPGTXWCFQMIU-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000004646 arylidenes Chemical group 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 125000000649 benzylidene group Chemical group [H]C(=[*])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 2
- QUZSUMLPWDHKCJ-UHFFFAOYSA-N bisphenol A dimethacrylate Chemical compound C1=CC(OC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OC(=O)C(C)=C)C=C1 QUZSUMLPWDHKCJ-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 229930008380 camphor Natural products 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 239000004567 concrete Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 125000004386 diacrylate group Chemical group 0.000 description 2
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007046 ethoxylation reaction Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 150000002220 fluorenes Chemical class 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 229940119545 isobornyl methacrylate Drugs 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical compound C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229940059574 pentaerithrityl Drugs 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000011085 pressure filtration Methods 0.000 description 2
- 238000000045 pyrolysis gas chromatography Methods 0.000 description 2
- 150000003254 radicals Chemical group 0.000 description 2
- 238000007363 ring formation reaction Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- GNWBLLYJQXKPIP-ZOGIJGBBSA-N (1s,3as,3bs,5ar,9ar,9bs,11as)-n,n-diethyl-6,9a,11a-trimethyl-7-oxo-2,3,3a,3b,4,5,5a,8,9,9b,10,11-dodecahydro-1h-indeno[5,4-f]quinoline-1-carboxamide Chemical compound CN([C@@H]1CC2)C(=O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H](C(=O)N(CC)CC)[C@@]2(C)CC1 GNWBLLYJQXKPIP-ZOGIJGBBSA-N 0.000 description 1
- GGAUUQHSCNMCAU-ZXZARUISSA-N (2s,3r)-butane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C[C@H](C(O)=O)[C@H](C(O)=O)CC(O)=O GGAUUQHSCNMCAU-ZXZARUISSA-N 0.000 description 1
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- PVSBSJWKYVWREE-UHFFFAOYSA-N 1,3-dioxo-3a,4,5,7a-tetrahydro-2-benzofuran-5-carboxylic acid Chemical compound OC(=O)C1CC2C(C=C1)C(=O)OC2=O PVSBSJWKYVWREE-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- GDXHBFHOEYVPED-UHFFFAOYSA-N 1-(2-butoxyethoxy)butane Chemical compound CCCCOCCOCCCC GDXHBFHOEYVPED-UHFFFAOYSA-N 0.000 description 1
- DLUPHJKQEIIYAM-UHFFFAOYSA-N 1-(2-ethoxyphenyl)-2-hydroxy-2-phenylethanone Chemical compound CCOC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 DLUPHJKQEIIYAM-UHFFFAOYSA-N 0.000 description 1
- JZHGRUMIRATHIU-UHFFFAOYSA-N 1-ethenyl-3-methylbenzene Chemical compound CC1=CC=CC(C=C)=C1 JZHGRUMIRATHIU-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- PSYGHMBJXWRQFD-UHFFFAOYSA-N 2-(2-sulfanylacetyl)oxyethyl 2-sulfanylacetate Chemical compound SCC(=O)OCCOC(=O)CS PSYGHMBJXWRQFD-UHFFFAOYSA-N 0.000 description 1
- KJRQMXRCZULRHF-UHFFFAOYSA-N 2-(4-cyanoanilino)acetic acid Chemical compound OC(=O)CNC1=CC=C(C#N)C=C1 KJRQMXRCZULRHF-UHFFFAOYSA-N 0.000 description 1
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 description 1
- DVYVBENBIMEAJZ-UHFFFAOYSA-N 2-(n-methylanilino)acetic acid Chemical compound OC(=O)CN(C)C1=CC=CC=C1 DVYVBENBIMEAJZ-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 description 1
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 1
- LTHJXDSHSVNJKG-UHFFFAOYSA-N 2-[2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOCCOC(=O)C(C)=C LTHJXDSHSVNJKG-UHFFFAOYSA-N 0.000 description 1
- ZMCHBSMFKQYNKA-UHFFFAOYSA-N 2-aminobenzenesulfonic acid Chemical compound NC1=CC=CC=C1S(O)(=O)=O ZMCHBSMFKQYNKA-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- VRVRGVPWCUEOGV-UHFFFAOYSA-N 2-aminothiophenol Chemical compound NC1=CC=CC=C1S VRVRGVPWCUEOGV-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- FLFWJIBUZQARMD-UHFFFAOYSA-N 2-mercapto-1,3-benzoxazole Chemical compound C1=CC=C2OC(S)=NC2=C1 FLFWJIBUZQARMD-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- AIDLAEPHWROGFI-UHFFFAOYSA-N 2-methylbenzene-1,3-dicarboxylic acid Chemical compound CC1=C(C(O)=O)C=CC=C1C(O)=O AIDLAEPHWROGFI-UHFFFAOYSA-N 0.000 description 1
- CFVWNXQPGQOHRJ-UHFFFAOYSA-N 2-methylpropyl prop-2-enoate Chemical compound CC(C)COC(=O)C=C CFVWNXQPGQOHRJ-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 1
- YTPSFXZMJKMUJE-UHFFFAOYSA-N 2-tert-butylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(C(C)(C)C)=CC=C3C(=O)C2=C1 YTPSFXZMJKMUJE-UHFFFAOYSA-N 0.000 description 1
- KXYAVSFOJVUIHT-UHFFFAOYSA-N 2-vinylnaphthalene Chemical compound C1=CC=CC2=CC(C=C)=CC=C21 KXYAVSFOJVUIHT-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical compound C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 1
- ZAJAQTYSTDTMCU-UHFFFAOYSA-N 3-aminobenzenesulfonic acid Chemical compound NC1=CC=CC(S(O)(=O)=O)=C1 ZAJAQTYSTDTMCU-UHFFFAOYSA-N 0.000 description 1
- KFFUEVDMVNIOHA-UHFFFAOYSA-N 3-aminobenzenethiol Chemical compound NC1=CC=CC(S)=C1 KFFUEVDMVNIOHA-UHFFFAOYSA-N 0.000 description 1
- ANEQGVKJIBRYFF-UHFFFAOYSA-N 3-ethyloxetane-2,4-dione Chemical class CCC1C(=O)OC1=O ANEQGVKJIBRYFF-UHFFFAOYSA-N 0.000 description 1
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- MXLMTQWGSQIYOW-UHFFFAOYSA-N 3-methyl-2-butanol Chemical class CC(C)C(C)O MXLMTQWGSQIYOW-UHFFFAOYSA-N 0.000 description 1
- SDYYWRBMQSZLOC-UHFFFAOYSA-N 3-methyloxetane-2,4-dione Chemical class CC1C(=O)OC1=O SDYYWRBMQSZLOC-UHFFFAOYSA-N 0.000 description 1
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 1
- FYYYKXFEKMGYLZ-UHFFFAOYSA-N 4-(1,3-dioxo-2-benzofuran-5-yl)-2-benzofuran-1,3-dione Chemical compound C=1C=C2C(=O)OC(=O)C2=CC=1C1=CC=CC2=C1C(=O)OC2=O FYYYKXFEKMGYLZ-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- UBXUFMKFYWHQEM-UHFFFAOYSA-N 4-(3-ethyl-2,4-dioxooxetan-3-yl)phthalic acid Chemical compound C(=O)(O)C=1C=C(C=CC=1C(=O)O)C1(CC)C(=O)OC1=O UBXUFMKFYWHQEM-UHFFFAOYSA-N 0.000 description 1
- GOIIQJDYBZYVDA-UHFFFAOYSA-N 4-(3-methyl-2,4-dioxooxetan-3-yl)phthalic acid Chemical compound C(=O)(O)C=1C=C(C=CC=1C(=O)O)C1(C)C(=O)OC1=O GOIIQJDYBZYVDA-UHFFFAOYSA-N 0.000 description 1
- JTWYIRAWVVAUBZ-UHFFFAOYSA-N 4-(4-amino-2,3-dimethylphenyl)-2,3-dimethylaniline Chemical compound C1=C(N)C(C)=C(C)C(C=2C(=C(C)C(N)=CC=2)C)=C1 JTWYIRAWVVAUBZ-UHFFFAOYSA-N 0.000 description 1
- GPQSJXRIHLUAKX-UHFFFAOYSA-N 4-(4-amino-2-ethylphenyl)-3-ethylaniline Chemical compound CCC1=CC(N)=CC=C1C1=CC=C(N)C=C1CC GPQSJXRIHLUAKX-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical compound CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- OUOAFMZIPXCUBR-UHFFFAOYSA-N 4-(4-amino-3,4-dimethylcyclohexa-2,5-dien-1-ylidene)-1,2-dimethylcyclohexa-2,5-dien-1-amine Chemical compound C1=CC(N)(C)C(C)=CC1=C1C=C(C)C(C)(N)C=C1 OUOAFMZIPXCUBR-UHFFFAOYSA-N 0.000 description 1
- VLZIZQRHZJOXDM-UHFFFAOYSA-N 4-(4-amino-3-ethylphenyl)-2-ethylaniline Chemical compound C1=C(N)C(CC)=CC(C=2C=C(CC)C(N)=CC=2)=C1 VLZIZQRHZJOXDM-UHFFFAOYSA-N 0.000 description 1
- JPZRPCNEISCANI-UHFFFAOYSA-N 4-(4-aminophenyl)-3-(trifluoromethyl)aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F JPZRPCNEISCANI-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- HVBSAKJJOYLTQU-UHFFFAOYSA-N 4-aminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C=C1 HVBSAKJJOYLTQU-UHFFFAOYSA-N 0.000 description 1
- WCDSVWRUXWCYFN-UHFFFAOYSA-N 4-aminobenzenethiol Chemical compound NC1=CC=C(S)C=C1 WCDSVWRUXWCYFN-UHFFFAOYSA-N 0.000 description 1
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 1
- ABJQKDJOYSQVFX-UHFFFAOYSA-N 4-aminonaphthalen-1-ol Chemical class C1=CC=C2C(N)=CC=C(O)C2=C1 ABJQKDJOYSQVFX-UHFFFAOYSA-N 0.000 description 1
- WUBBRNOQWQTFEX-UHFFFAOYSA-N 4-aminosalicylic acid Chemical compound NC1=CC=C(C(O)=O)C(O)=C1 WUBBRNOQWQTFEX-UHFFFAOYSA-N 0.000 description 1
- CCTOEAMRIIXGDJ-UHFFFAOYSA-N 4-hydroxy-2-benzofuran-1,3-dione Chemical compound OC1=CC=CC2=C1C(=O)OC2=O CCTOEAMRIIXGDJ-UHFFFAOYSA-N 0.000 description 1
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 1
- 229940044174 4-phenylenediamine Drugs 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- ZBIBQNVRTVLOHQ-UHFFFAOYSA-N 5-aminonaphthalen-1-ol Chemical class C1=CC=C2C(N)=CC=CC2=C1O ZBIBQNVRTVLOHQ-UHFFFAOYSA-N 0.000 description 1
- FSBRKZMSECKELY-UHFFFAOYSA-N 5-aminonaphthalen-2-ol Chemical class OC1=CC=C2C(N)=CC=CC2=C1 FSBRKZMSECKELY-UHFFFAOYSA-N 0.000 description 1
- FPKNJPIDCMAIDW-UHFFFAOYSA-N 5-aminonaphthalene-1-carboxylic acid Chemical class C1=CC=C2C(N)=CC=CC2=C1C(O)=O FPKNJPIDCMAIDW-UHFFFAOYSA-N 0.000 description 1
- XVOBQVZYYPJXCK-UHFFFAOYSA-N 5-aminonaphthalene-2-carboxylic acid Chemical class OC(=O)C1=CC=C2C(N)=CC=CC2=C1 XVOBQVZYYPJXCK-UHFFFAOYSA-N 0.000 description 1
- YDEUKNRKEYICTH-UHFFFAOYSA-N 5-aminoquinolin-8-ol Chemical compound C1=CC=C2C(N)=CC=C(O)C2=N1 YDEUKNRKEYICTH-UHFFFAOYSA-N 0.000 description 1
- QYFYIOWLBSPSDM-UHFFFAOYSA-N 6-aminonaphthalen-1-ol Chemical class OC1=CC=CC2=CC(N)=CC=C21 QYFYIOWLBSPSDM-UHFFFAOYSA-N 0.000 description 1
- SERBLGFKBWPCJD-UHFFFAOYSA-N 6-aminonaphthalen-2-ol Chemical class C1=C(O)C=CC2=CC(N)=CC=C21 SERBLGFKBWPCJD-UHFFFAOYSA-N 0.000 description 1
- CKSZZOAKPXZMAT-UHFFFAOYSA-N 6-aminonaphthalene-1-carboxylic acid Chemical class OC(=O)C1=CC=CC2=CC(N)=CC=C21 CKSZZOAKPXZMAT-UHFFFAOYSA-N 0.000 description 1
- NZTPZUIIYNYZKT-UHFFFAOYSA-N 6-aminonaphthalene-2-carboxylic acid Chemical class C1=C(C(O)=O)C=CC2=CC(N)=CC=C21 NZTPZUIIYNYZKT-UHFFFAOYSA-N 0.000 description 1
- DXPPIEDUBFUSEZ-UHFFFAOYSA-N 6-methylheptyl prop-2-enoate Chemical group CC(C)CCCCCOC(=O)C=C DXPPIEDUBFUSEZ-UHFFFAOYSA-N 0.000 description 1
- ZYSOYLBBCYWEMB-UHFFFAOYSA-N 7-aminonaphthalen-1-ol Chemical class C1=CC=C(O)C2=CC(N)=CC=C21 ZYSOYLBBCYWEMB-UHFFFAOYSA-N 0.000 description 1
- WSUYONLKFXZZRV-UHFFFAOYSA-N 7-aminonaphthalen-2-ol Chemical class C1=CC(O)=CC2=CC(N)=CC=C21 WSUYONLKFXZZRV-UHFFFAOYSA-N 0.000 description 1
- BFBAHPDPLUEECU-UHFFFAOYSA-N 7-aminonaphthalene-1-carboxylic acid Chemical class C1=CC=C(C(O)=O)C2=CC(N)=CC=C21 BFBAHPDPLUEECU-UHFFFAOYSA-N 0.000 description 1
- NBPYPKQPLKDTKB-UHFFFAOYSA-N 7-aminonaphthalene-2-carboxylic acid Chemical class C1=CC(C(O)=O)=CC2=CC(N)=CC=C21 NBPYPKQPLKDTKB-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- GZKKQMAWGLZPOW-UHFFFAOYSA-N C(=O)(O)C1=C(C=CC=C1C(=O)O)C1C(=O)OC1=O Chemical compound C(=O)(O)C1=C(C=CC=C1C(=O)O)C1C(=O)OC1=O GZKKQMAWGLZPOW-UHFFFAOYSA-N 0.000 description 1
- JYZDNOSMFDLJAW-UHFFFAOYSA-N C(=O)(O)C=1C=C(C=CC=1C(=O)O)C1C(=O)OC1=O Chemical compound C(=O)(O)C=1C=C(C=CC=1C(=O)O)C1C(=O)OC1=O JYZDNOSMFDLJAW-UHFFFAOYSA-N 0.000 description 1
- XCZRPHAJUGHMRC-UHFFFAOYSA-N C(=O)=C1C(C(=O)C2=CC=CC=C2)C=CC=C1.C(C)(C)(C)OO Chemical compound C(=O)=C1C(C(=O)C2=CC=CC=C2)C=CC=C1.C(C)(C)(C)OO XCZRPHAJUGHMRC-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- 241000522215 Dipteryx odorata Species 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical compound OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 1
- REUQOSNMSWLNPD-UHFFFAOYSA-N [2-(diethylamino)phenyl]-phenylmethanone Chemical compound CCN(CC)C1=CC=CC=C1C(=O)C1=CC=CC=C1 REUQOSNMSWLNPD-UHFFFAOYSA-N 0.000 description 1
- TUOBEAZXHLTYLF-UHFFFAOYSA-N [2-(hydroxymethyl)-2-(prop-2-enoyloxymethyl)butyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(CC)COC(=O)C=C TUOBEAZXHLTYLF-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- QBLDFAIABQKINO-UHFFFAOYSA-N barium borate Chemical compound [Ba+2].[O-]B=O.[O-]B=O QBLDFAIABQKINO-UHFFFAOYSA-N 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 235000010216 calcium carbonate Nutrition 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- GBAOBIBJACZTNA-UHFFFAOYSA-L calcium sulfite Chemical compound [Ca+2].[O-]S([O-])=O GBAOBIBJACZTNA-UHFFFAOYSA-L 0.000 description 1
- 235000010261 calcium sulphite Nutrition 0.000 description 1
- 229960000846 camphor Drugs 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- YQHLDYVWEZKEOX-UHFFFAOYSA-N cumene hydroperoxide Chemical compound OOC(C)(C)C1=CC=CC=C1 YQHLDYVWEZKEOX-UHFFFAOYSA-N 0.000 description 1
- YMHQVDAATAEZLO-UHFFFAOYSA-N cyclohexane-1,1-diamine Chemical compound NC1(N)CCCCC1 YMHQVDAATAEZLO-UHFFFAOYSA-N 0.000 description 1
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 1
- UKJLNMAFNRKWGR-UHFFFAOYSA-N cyclohexatrienamine Chemical group NC1=CC=C=C[CH]1 UKJLNMAFNRKWGR-UHFFFAOYSA-N 0.000 description 1
- OIWOHHBRDFKZNC-UHFFFAOYSA-N cyclohexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCCCC1 OIWOHHBRDFKZNC-UHFFFAOYSA-N 0.000 description 1
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002332 glycine derivatives Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 1
- 229940091853 isobornyl acrylate Drugs 0.000 description 1
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 235000014380 magnesium carbonate Nutrition 0.000 description 1
- 229960001708 magnesium carbonate Drugs 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- KBOPZPXVLCULAV-UHFFFAOYSA-N mesalamine Chemical compound NC1=CC=C(O)C(C(O)=O)=C1 KBOPZPXVLCULAV-UHFFFAOYSA-N 0.000 description 1
- 229960004963 mesalazine Drugs 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- YZOISHTVEWVNHA-UHFFFAOYSA-N n,n'-dicyclohexylmethanediamine Chemical compound C1CCCCC1NCNC1CCCCC1 YZOISHTVEWVNHA-UHFFFAOYSA-N 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- 229940017144 n-butyl lactate Drugs 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- PODAMDNJNMAKAZ-UHFFFAOYSA-N penta-2,3-diene Chemical compound CC=C=CC PODAMDNJNMAKAZ-UHFFFAOYSA-N 0.000 description 1
- TZMFJUDUGYTVRY-UHFFFAOYSA-N pentane-2,3-dione Chemical compound CCC(=O)C(C)=O TZMFJUDUGYTVRY-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000001327 prunus amygdalus amara l. extract Substances 0.000 description 1
- JRDBISOHUUQXHE-UHFFFAOYSA-N pyridine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)N=C1C(O)=O JRDBISOHUUQXHE-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007776 silk screen coating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical compound [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
- C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
- C08G73/1053—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the tetracarboxylic moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
- C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2312/00—Crosslinking
- C08L2312/06—Crosslinking by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/29388—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
- H01L2224/81204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
- H01L2224/83204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06568—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices decreasing in size, e.g. pyramidical stack
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01056—Barium [Ba]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Adhesive Tapes (AREA)
Abstract
一种感光性粘合剂组合物,含有(A)具有特定结构单元且在主链的至少一末端具有特定结构的碱溶性聚酰亚胺、(B)特定结构的缩水甘油基胺型环氧化合物、(C)光聚合性化合物和(D)光聚合引发剂,其中,(A)碱溶性聚酰亚胺的玻璃化转变温度为160℃以上。本发明的感光性粘合剂组合物可通过碱性显影液形成图案,曝光后对带凹凸的基板的低温下的热压接性优异,高温时也具有高粘合强度。
Description
技术领域
本发明涉及感光性粘合剂组合物、感光性粘合剂膜和使用它们的半导体装置。
背景技术
近年来,伴随电子部件的高性能化要求,半导体装置的小型化、工作速度的高速化和配线的高密度化得到了发展,提出了与这些性能对应的各种各样的封装形态。为了将具有硅通孔的半导体元件以3维结构进行层合、或为了将半导体元件和支撑基材粘合、或为了形成图像传感器或MEMS那样的具有中空结构的封装件,半导体封装中使用粘合剂。对用于其中的粘合剂,要求低应力性、粘合性、绝缘可靠性和耐焊料回流性,而且,为了工艺简化或形成特有结构的封装件,要求可形成图案、即具有感光性。
作为满足这样的众多特性的粘合剂,研究了耐热性和绝缘性优异的聚酰亚胺类粘合剂。特别是作为具有感光性功能的粘合剂,例如,在专利文献1中提出了使聚酰胺酸那样的聚酰亚胺前体预固化的技术。另外,在专利文献2、3中提出了为了抑制热对周边构件的损害以已闭环聚酰亚胺等为基体树脂的材料。在专利文献4中提出了以图案形成后低温贴附性优异的碱溶性聚酰亚胺树脂为主体的感光性粘合剂组合物。
专利文献1:日本特开2008-239802号公报
专利文献2:国际公开WO2004/109403号小册子
专利文献3:国际公开WO2007/4569号小册子
专利文献4:日本特开2009-167381
发明内容
然而,专利文献1~4中记载的现有的聚酰亚胺类粘合剂难以同时实现曝光后的热压接性和充分的粘合性。特别是在对被图案化的基板那样的带凹凸的基板在曝光后于低温下进行压接时压接变得不充分的方面、或在因焊料回流等高温处理引起的粘合强度降低的方面存在问题。如果对带凹凸的基板的低温下的热压接性不良,则其后当将半导体元件接合在基板上时在半导体元件与带凹凸的基板之间产生空隙,形成粘合不良,产生作为半导体封装件的可靠性降低的问题。
鉴于上述状况,本发明的发明课题是提供可通过碱性显影液形成图案、曝光后对带凹凸的基板的低温下的热压接性优异、高温时也具有高粘合强度的感光性粘合剂。
上述的本发明的课题通过下述感光性粘合剂组合物得到了解决,所述感光性粘合剂组合物含有(A)具有下述通式(1)所示的结构单元且在主链的至少一末端具有通式(2)和/或(3)所示的结构的碱溶性聚酰亚胺、(B)下述通式(4)或(5)所示的缩水甘油基胺型环氧化合物、(C)光聚合性化合物和(D)光聚合引发剂,其中,(A)碱溶性聚酰亚胺的玻璃化转变温度为160℃以上。
(上述通式(1)~(3)中,Y表示具有至少一个选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的基团的一价有机基团,Z表示具有至少一个选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的基团的二价有机基团。另外,R1表示4~14价有机基团,R2表示2~12价有机基团,R3和R4各自独立地表示选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的至少一个基团。另外,α和β各自独立地表示0~10的整数。)
(上述通式(4)~(5)中,R5~R20可以分别相同或不同,为缩水甘油基醚基、下述通式(6)所示的基团、氢原子或碳原子数为1~5的烷基。其中,在通式(4)中,R5~R10中的至少1个为缩水甘油基醚基且至少1个为下述通式(6)所示的基团,或R5~R10中的至少2个为下述通式(6)所示的基团。另外,在通式(5)中,R11~R15中的至少1个和R16~R20中的至少1个为下述通式(6)所示的基团。另外,上述通式(5)中,X表示直接键合、碳原子数为1~6的亚烷基、醚基、硫醚基、磺酰基或亚芳基。亚烷基可以为链状也可以为环状。)
(上述通式(6)中,R21为缩水甘油基或碳原子数1~5的烷基。)
通过本发明,能够得到可通过碱性显影液形成图案、曝光后对带凹凸的基板的低温下的热压接性优异、高温时也具有高粘合强度的感光性粘合剂组合物。
附图说明
图1表示使用本发明的感光性粘合剂组合物的半导体装置的制造方法的一例。
具体实施方式
本发明的感光性粘合剂组合物含有(A)具有上述通式(1)所示的结构单元且在主链的至少一末端具有通式(2)和/或(3)所示的结构的碱溶性聚酰亚胺、(B)上述通式(4)或(5)所示的缩水甘油基胺型环氧化合物、(C)光聚合性化合物和(D)光聚合引发剂。
对固化前的本发明的感光性粘合剂组合物的形状没有限定,例如,可以举出清漆状或膜状、涂布在支撑基材上而成的片状等。另外,该感光性粘合剂组合物由于含有已闭环的聚酰亚胺,所以无需像含有聚酰亚胺前体的粘合剂组合物那样,利用加热或适当的催化剂,通过闭环反应将聚酰亚胺前体转换为聚酰亚胺。因此,该感光性粘合剂组合物可以抑制在粘合基板时基板与粘合剂之间产生的孔隙。另外,该感光性粘合剂由于不需要进行在上述专利文献1的技术中需要的对基板热压接前的高温下的加热处理,因而环氧化合物与聚酰亚胺中的碱溶性基团的固化反应受到抑制,可对带凹凸的基板于低温下进行热压接。进而,由于基于酰亚胺闭环反应的固化收缩所产生的应力小,所以与含有聚酰亚胺前体的树脂组合物相比,可以容易地形成厚膜。
由于用碱水溶液显影,所以本发明中的(A)碱溶性聚酰亚胺优选具有碱溶性的官能团。碱溶性的官能团是指具有酸性的官能团,具体可以举出酚式羟基、羧基、磺酸基等。在此所说的碱溶性是指相对于氢氧化四甲基铵的2.38%水溶液100g,在25℃溶解0.1g以上。上述碱溶性基团中,从感光性粘合剂组合物的保存稳定性、对作为导体的铜配线的腐蚀等问题考虑,碱溶性基团优选为酚式羟基。碱溶性基团向聚酰亚胺的导入可以通过使二胺、四羧酸二酐或封端剂具有碱溶性基团来进行。需要说明的是,聚酰亚胺的酰亚胺化率小于100%时,来源于四羧酸二酐的羧基残留,但该羧基不包括在此处所说的碱溶性基团中。
本发明中的(A)碱溶性聚酰亚胺具有下述通式(1)的结构单元且在主链的至少一末端具有通式(2)和/或(3)的结构。
式中,Y表示具有至少一个选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的基团的一价有机基团,Z表示具有至少一个选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的基团的二价有机基团。Y优选为芳香族基团,Z优选为芳香族基团或具有碳-碳双键的基团。其中,Y和Z优选具有酚式羟基或硫醇基。
另外,R1表示4~14价有机基团,R2表示2~12价有机基团,R3和R4各自独立地表示选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的至少一个基团。另外,α和β各自独立地表示0~10的整数。
在本发明中,(A)碱溶性聚酰亚胺的重均分子量优选为10,000以上至100,000以下。在含有两种以上可溶性聚酰亚胺的情况下,只要其中至少一种的重均分子量为上述范围即可。重均分子量为10,000以上时,固化膜的机械强度提高,粘合强度变高。另一方面,重均分子量为100,000以下时,可抑制在碱水溶液中产生显影残渣。进而,从提高显影性的方面考虑,优选为50,000以下。需要说明的是,本发明中的重均分子量通过凝胶渗透色谱法(GPC法)测定,并经聚苯乙烯换算计算出来。
本发明的(A)碱溶性聚酰亚胺的玻璃化转变温度(Tg)为160℃以上。Tg更优选为180℃以上,进一步优选为200℃以上。Tg为该范围,则高温时的粘合强度变高。需要说明的是,本发明中的Tg是通过差示扫描热量测定法(DSC法)测定的,将对于聚酰亚胺粉体进行测定时的热量变化曲线微分,微分曲线中显示最大值时的温度为Tg。
(A)碱溶性聚酰亚胺可通过四羧酸二酐与二胺的反应来得到。
在通式(1)中,R1为四羧酸二酐的残基。R1优选为含有芳香族基团或环状脂肪族基团的碳原子数为8~40的有机基团。
作为四羧酸二酐,具体可以举出均苯四酸二酐、3,3’,4,4’-联苯四羧酸二酐、2,3,3’,4’-联苯四羧酸二酐、2,2’,3,3’-联苯四羧酸二酐、3,3’,4,4’-二苯甲酮四羧酸二酐、2,2’,3,3’-二苯甲酮四羧酸二酐、2,2-双(3,4-二羧基苯基)丙烷二酸酐、2,2-双(2,3-二羧基苯基)丙烷二酸酐、1,1-双(3,4-二羧基苯基)乙烷二酸酐、1,1-双(2,3-二羧基苯基)乙烷二酸酐、双(3,4-二羧基苯基)甲烷二酸酐、双(2,3-二羧基苯基)甲烷二酸酐、双(3,4-二羧基苯基)砜二酸酐、双(3,4-二羧基苯基)醚二酸酐、1,2,5,6-萘四羧酸二酐、9,9-双(3,4-二羧基苯基)芴二酸酐、9,9-双{4-(3,4-二羧基苯氧基)苯基}芴二酸酐、2,3,6,7-萘四羧酸二酐、2,3,5,6-吡啶四羧酸二酐、3,4,9,10-苝四羧酸二酐、2,2-双(3,4-二羧基苯基)六氟丙烷二酸酐等芳香族四羧酸二酐、或丁烷四羧酸二酐、1,2,3,4-环戊烷四羧酸二酐等脂肪族四羧酸二酐、及下述所示结构的二酸酐等。这些可单独使用或组合两种以上使用。
此处,R22表示选自氧原子、C(CF3)2、C(CH3)2、CO、COO和SO2中的基团,R23和R24分别表示选自氢原子、羟基和硫醇基中的基团。
在通式(1)中,R2为二胺的残基。R2优选为含有芳香族基团或环状脂肪族基团的碳原子数为5~40的有机基团。
作为二胺的具体例,可以举出3,3’-二氨基二苯基醚、3,4’-二氨基二苯基醚、4,4’-二氨基二苯基醚、3,3’-二氨基二苯基甲烷、3,4’-二氨基二苯基甲烷、4,4’-二氨基二苯基甲烷、3,3’-二氨基二苯砜、3,4’-二氨基二苯砜、4,4’-二氨基二苯砜、3,4’-二氨基二苯基硫醚、4,4’-二氨基二苯基硫醚、1,4-双(4-氨基苯氧基)苯、1,3-双(4-氨基苯氧基)苯、1,3-双(3-氨基苯氧基)苯、联苯胺、间苯二胺、对苯二胺、1,5-萘二胺、2,6-萘二胺、双(4-氨基苯氧基苯基)砜、双(3-氨基苯氧基苯基)砜、双(4-氨基苯氧基)联苯、双{4-(4-氨基苯氧基)苯基}醚、1,4-双(4-氨基苯氧基)苯、2,2’-二甲基-4,4’-二氨基联苯、2,2’-二乙基-4,4’-二氨基联苯、3,3’-二甲基-4,4’-二氨基联苯、3,3’-二乙基-4,4’-二氨基联苯、2,2’,3,3’-四甲基-4,4’-二氨基联苯、3,3’,4,4’-四甲基-4,4’-二氨基联苯、2,2’-二(三氟甲基)-4,4’-二氨基联苯、9,9-双(4-氨基苯基)芴或在这些芳香环上取代有烷基或卤原子的化合物、脂肪族的环己二胺、亚甲基双环己胺和下述所示结构的二胺等。它们可单独使用或组合两种以上使用。
此处,R25表示选自氧原子、C(CF3)2、C(CH3)2、CO、COO和SO2中的基团,R26~R29分别表示选自羟基和硫醇基中的基团。
这些中,优选3,3’-二氨基二苯基醚、3,4’-二氨基二苯基醚、4,4’-二氨基二苯基醚、3,3’-二氨基二苯基甲烷、3,4’-二氨基二苯基甲烷、4,4’-二氨基二苯基甲烷、3,3’-二氨基二苯砜、3,4’-二氨基二苯砜、4,4’-二氨基二苯砜、3,4’-二氨基二苯基硫醚、4,4’-二氨基二苯基硫醚、间苯二胺、对苯二胺、1,4-双(4-氨基苯氧基)苯、9,9-双(4-氨基苯基)芴和下述所示结构的二胺等。
此处,R25表示选自氧原子、C(CF3)2、C(CH3)2和SO2中的基团,R26~R29分别表示选自羟基和硫醇基中的基团。
进而,为了提高与基板的粘合性,也可以以不降低耐热性的范围共聚具有硅氧烷结构的二胺。具体可以举出共聚有1~10摩尔%的双(3-氨基丙基)四甲基二硅氧烷、双(对氨基苯基)八甲基五硅氧烷等的二胺等。
对于本发明中所用的(A)碱溶性聚酰亚胺,可将主链末端的至少一部分用伯单胺或二羧酸酐封端。通过该封端剂,可以将碱溶性聚酰亚胺的重均分子量调整为适当的范围。进而,从提高碱溶性的方面考虑,封端剂具有碱溶性基团。
在通式(2)中,Y来源于作为封端剂的伯单胺。作为封端剂的具体例,伯单胺优选5-氨基-8-羟基喹啉、1-羟基-7-氨基萘、1-羟基-6-氨基萘、1-羟基-5-氨基萘、1-羟基-4-氨基萘、2-羟基-7-氨基萘、2-羟基-6-氨基萘、2-羟基-5-氨基萘、1-羧基-7-氨基萘、1-羧基-6-氨基萘、1-羧基-5-氨基萘、2-羧基-7-氨基萘、2-羧基-6-氨基萘、2-羧基-5-氨基萘、2-氨基苯甲酸、3-氨基苯甲酸、4-氨基苯甲酸、4-氨基水杨酸、5-氨基水杨酸、6-氨基水杨酸、2-氨基苯磺酸、3-氨基苯磺酸、4-氨基苯磺酸、3-氨基-4,6-二羟基嘧啶、2-氨基苯酚、3-氨基苯酚、4-氨基苯酚、2-氨基苯硫酚、3-氨基苯硫酚、4-氨基苯硫酚等。
另外,在通式(3)中,Z来源于作为封端剂的二羧酸酐。作为二羧酸酐,优选4-羧基邻苯二甲酸酐、3-羟基邻苯二甲酸酐、顺-乌头酸酐等。它们可单独使用或组合两种以上使用。
本发明中所用的(A)碱溶性聚酰亚胺可将一部分二胺替换为封端剂伯单胺,或将四羧酸二酐替换为封端剂二羧酸酐,用公知的方法来合成。例如,利用低温中使四羧酸二酐、二胺化合物和单胺反应的方法;低温中使四羧酸二酐、二羧酸酐和二胺化合物反应的方法;由四羧酸二酐和醇得到二酯,其后在缩合剂的存在下与二胺和单胺反应的方法等方法,得到聚酰亚胺前体。其后,利用公知的酰亚胺化反应法,可以合成聚酰亚胺。
在使用具有通式(1)所示的结构单元的聚酰亚胺作为本发明中所用的(A)碱溶性聚酰亚胺的情况下,其聚酰亚胺既可以仅由通式(1)所示的结构单元构成,也可以为与其他结构单元的共聚物。此时,优选含有聚酰亚胺整体的50mol%以上的通式(1)所示的结构单元。用于共聚或混合的结构单元的种类和量优选在不损害通过最终加热处理得到的聚酰亚胺的耐热性的范围中选择。
另外,(A)碱溶性聚酰亚胺的酰亚胺化率例如可以用以下的方法容易地求出。此处,酰亚胺化率是指,在如上所述经聚酰亚胺前体合成聚酰亚胺时,聚酰亚胺前体中多少摩尔百分比的前体转换为聚酰亚胺。首先,测定聚合物的红外吸收光谱,确认存在由聚酰亚胺引起的酰亚胺结构的吸收峰(1,780cm-1附近、1,377cm-1附近)。其次,对于该聚合物,于350℃进行1小时热处理后,再次测定红外吸收光谱,比较热处理前和热处理后的1,377cm-1附近的峰强度。将热处理后的聚合物的酰亚胺化率设定为100%,求出热处理前的聚合物的酰亚胺化率。聚合物的酰亚胺化率优选为90%以上。
导入到(A)成分的碱溶性聚酰亚胺中的封端剂可以用以下的方法检出。例如,将导入了封端剂的聚酰亚胺溶解在酸性溶液中,分解为作为聚酰亚胺结构单元的胺成分和羧酸酐成分,通过气相色谱(GC)、NMR对其进行测定。与此不同,将导入了封端剂的聚酰亚胺直接利用热解气相色谱(PGC)、或红外光谱和13CNMR光谱进行测定,也可检出封端剂。
本发明的感光性粘合剂组合物含有(B)下述通式(4)或(5)的任一个表示的缩水甘油基胺型环氧化合物。
上述通式(4)~(5)中,R5~R20可以分别相同或不同,为缩水甘油基醚基、下述通式(6)所示的基团、氢原子或碳原子数为1~5的烷基。其中,在通式(4)中,R5~R10中的至少1个为缩水甘油基醚基且至少1个为下述通式(6)所示的基团,或R5~R10中的至少2个为下述通式(6)所示的基团。另外,在通式(5)中,R11~R15中的至少1个和R16~R20中的至少1个为下述通式(6)所示的基团。另外,上述通式(5)中,X表示直接键合、碳原子数为1~6的亚烷基、醚基、硫醚基、磺酰基或亚芳基。亚烷基可以为链状也可以为环状。
上述通式(6)中,R21为缩水甘油基或碳原子数1~5的烷基。
(B)缩水甘油基胺型环氧化合物通过具有良好的与(A)碱溶性聚酰亚胺的相容性,在将本发明的感光性粘合剂组合物制成干膜时可以抑制膜上产生裂纹。另外,对碱水溶液的显影性提高。另外,通过具有2个以上环氧基,固化时引起与聚酰亚胺的交联反应。由此,固化膜的耐热性提高,高温时也可以表现出充分的粘合强度。另外,通过含有上述(B)缩水甘油基胺型环氧化合物,曝光后的感光性粘合剂组合物被膜对带凹凸的基板的低温下的热压接性变得良好。在(A)碱溶性聚酰亚胺的Tg大的情况下,一般,所述热压接性有受损的倾向,但本发明中通过存在(B)成分,该热压接性良好。因而,可以同时实现曝光后的热压接性和高温时的粘合性。
对于(B)缩水甘油基胺型环氧化合物,从高温时的粘合强度提高的方面考虑,上述通式(6)中,优选R21为缩水甘油基。
作为(B)缩水甘油基胺型环氧化合物,例如,可以举出N,N-双(2,3-环氧丙基)-4-(2,3-环氧丙氧基)苯胺、N,N,N’,N’-四(2,3-环氧丙基)-1,4-苯二胺、N,N,N’,N’-四(环氧乙烷-2-基甲基)-4,4’-亚甲基二苯胺、jER-630、jER-630LSD、jER-604(商品名、三菱化学株式会社制造)、ADEKA树脂EP-3900S((株)ADEKA制造、“Adeka ResinEP”:注册商标)、YH-434、YH-434L(商品名、新日铁化学株式会社制造)等。这些可以单独使用或组合两种以上使用。
从室温下表现出充分的粘合强度的方面考虑,(B)缩水甘油基胺型环氧化合物的含量相对于(A)碱溶性聚酰亚胺100重量份优选为10重量份以上,从抑制制成干膜时的裂纹的方面考虑更优选为25重量份以上。另外,从可以抑制干膜的粘性的方面考虑优选为150重量份以下,从高温时的粘合强度提高的方面考虑更优选为120重量份以下。
本发明的感光性粘合剂组合物含有(C)光聚合性化合物。光聚合性化合物为具有聚合性基团的化合物。作为聚合性基团,例如,可以举出乙烯基、烯丙基、丙烯酰基、甲基丙烯酰基等不饱和双键官能团和/或炔丙基等不饱和三键官能团,这些中在聚合性方面优选共轭型的乙烯基或丙烯酰基、甲基丙烯酰基。另外,由聚合反应所致的交联点多时,在图案上有可能产生裂纹,所以聚合性基团的数目优选为1~6。此外,聚合性基团可以不全部为同一基团,也可以组合上述基团来使用。
作为(C)光聚合性化合物,例如,可以举出二甘醇二丙烯酸酯、三甘醇二丙烯酸酯、四甘醇二丙烯酸酯、二甘醇二甲基丙烯酸酯、三甘醇二甲基丙烯酸酯、四甘醇二甲基丙烯酸酯、三羟甲基丙烷二丙烯酸酯、三羟甲基丙烷三丙烯酸酯、三羟甲基丙烷二甲基丙烯酸酯、三羟甲基丙烷三甲基丙烯酸酯、苯乙烯、α-甲基苯乙烯、1,2-二氢萘、1,3-二异丙烯基苯、3-甲基苯乙烯、4-甲基苯乙烯、2-乙烯基萘、丙烯酸丁酯、甲基丙烯酸丁酯、丙烯酸异丁酯、丙烯酸己酯、丙烯酸异辛酯、丙烯酸异冰片酯、甲基丙烯酸异冰片酯、甲基丙烯酸环己酯、1,3-丁二醇二丙烯酸酯、1,3-丁二醇二甲基丙烯酸酯、新戊二醇二丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,4-丁二醇二甲基丙烯酸酯、1,6-己二醇二丙烯酸酯、1,6-己二醇二甲基丙烯酸酯、1,9-壬二醇二甲基丙烯酸酯、1,10-癸二醇二甲基丙烯酸酯、二羟甲基-三环癸烷二丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇六丙烯酸酯、二季戊四醇六甲基丙烯酸酯、丙烯酸-2-羟乙酯、甲基丙烯酸-2-羟乙酯、1,3-二丙烯酰氧基-2-羟基丙烷、1,3-二甲基丙烯酰氧基-2-羟基丙烷、亚甲基双丙烯酰胺、N,N-二甲基丙烯酰胺、N-羟甲基丙烯酰胺、甲基丙烯酸2,2,6,6-四甲基哌啶基酯、丙烯酸2,2,6,6-四甲基哌啶基酯、甲基丙烯酸N-甲基-2,2,6,6-四甲基哌啶基酯、丙烯酸N-甲基-2,2,6,6-四甲基哌啶基酯、氧化乙烯改性双酚A二丙烯酸酯、氧化乙烯改性双酚A二甲基丙烯酸酯、氧化丙烯改性双酚A二丙烯酸酯、氧化丙烯改性双酚A甲基丙烯酸酯、丙氧基化乙氧基化双酚A二丙烯酸酯、丙氧基化乙氧基化双酚A二甲基丙烯酸酯、N-乙烯基吡咯烷酮、N-乙烯基己内酰胺等。这些可以单独使用或组合两种以上使用。
这些中,特别优选举出1,9-壬二醇二甲基丙烯酸酯、1,10-癸二醇二甲基丙烯酸酯、二羟甲基-三环癸烷二丙烯酸酯、丙烯酸异冰片酯、甲基丙烯酸异冰片酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇六丙烯酸酯、二季戊四醇六甲基丙烯酸酯、亚甲基双丙烯酰胺、N,N-二甲基丙烯酰胺、N-羟甲基丙烯酰胺、甲基丙烯酸2,2,6,6-四甲基哌啶基酯、丙烯酸2,2,6,6-四甲基哌啶基酯、甲基丙烯酸N-甲基-2,2,6,6-四甲基哌啶基酯、丙烯酸N-甲基-2,2,6,6-四甲基哌啶基酯、氧化乙烯改性双酚A二丙烯酸酯、氧化乙烯改性双酚A二甲基丙烯酸酯、氧化丙烯改性双酚A二丙烯酸酯、氧化丙烯改性双酚A甲基丙烯酸酯、丙氧基化乙氧基化双酚A二丙烯酸酯、丙氧基化乙氧基化双酚A二甲基丙烯酸酯、N-乙烯基吡咯烷酮、N-乙烯基己内酰胺等。
从显影后得到充分的残膜的方面考虑,(C)光聚合性化合物的含量相对于(A)碱溶性聚酰亚胺100重量份优选为40重量份以上,进一步优选为50重量份以上。另一方面,从固化膜的耐热性提高的方面考虑,优选为150重量份以下,进一步优选为100重量份以下。
本发明的感光性粘合剂组合物含有(D)光聚合引发剂。作为(D)光聚合引发剂,例如,可以举出二苯甲酮、米希勒酮、4,4,-双(二乙基氨基)二苯甲酮、3,3,4,4,-四(叔丁基过氧化羰基)二苯甲酮等二苯甲酮类;3,5-双(二乙基氨基亚苄基)-N-甲基-4-哌啶酮、3,5-双(二乙基氨基亚苄基)-N-乙基-4-哌啶酮等亚苄基类;7-二乙基氨基-3-壬基香豆素、4,6-二甲基-3-乙基氨基香豆素、3,3-羰基双(7-二乙基氨基香豆素)、7-二乙基氨基-3-(1-甲基甲基苯并咪唑基)香豆素、3-(2-苯并噻唑基)-7-二乙基氨基香豆素等香豆素类;2-叔丁基蒽醌、2-乙基蒽醌、1,2-苯并蒽醌等蒽醌类;苯偶姻甲醚、苯偶姻乙醚、苯偶姻异丙醚等苯偶姻类;2,4-二甲基噻吨酮、2,4-二乙基噻吨酮、2,4-二异丙基噻吨酮、2-异丙基噻吨酮等噻吨酮类;乙二醇二(3-巯基丙酸酯)、2-巯基苯并噻唑、2-巯基苯并噁唑、2-巯基苯并咪唑等巯基类;N-苯基甘氨酸、N-甲基-N-苯基甘氨酸、N-乙基-N-(对氯苯基)甘氨酸、N-(4-氰基苯基)甘氨酸等甘氨酸类;1-苯基-1,2-丁烷二酮-2-(邻-甲氧基羰基)肟、1-苯基-1,2-丙烷二酮-2-(邻-甲氧基羰基)肟、1-苯基-1,2-丙烷二酮-2-(邻-乙氧基羰基)肟、1-苯基-1,2-丙烷二酮-2-(邻-苯甲酰基)肟、双(α-异亚硝基苯丙酮肟)间苯二甲酰基(bis(α-isonitrosopropiophenoneoxime)isophthal)、1,2-辛烷二酮-1-[4-(苯硫基)苯基]-2-(邻-苯甲酰基肟)等肟类;2-苄基-2-二甲氨基-1-(4-吗啉代苯基)-丁烷-1-酮、2-甲基-1[4-(甲硫基)苯基]-2-吗啉基-1-丙酮等α-氨基烷基苯酮类;2,2’-双(邻-氯苯基)-4,4’,5,5’-四苯基联咪唑等。这些中,从光反应的方面考虑,优选选自上述的二苯甲酮类、甘氨酸类、巯基类、肟类、α-氨基烷基苯酮类和2,2’-双(邻-氯苯基)-4,4’,5,5’-四苯基联咪唑中的化合物的组合。这些光聚合引发剂可单独使用或组合两种以上使用。更优选肟类,特别优选为选自1-苯基-1,2-丙烷二酮-2-(邻-乙氧基羰基)肟、1-苯基-1,2-丙烷二酮-2-(邻-苯甲酰基)肟、双(α-异亚硝基苯丙酮肟)间苯二甲酰基、OXE01、OXE02(商品名、汽巴精化株式会社制造)、N-1919和NCI-831(商品名、(株)ADEKA制造)中的化合物。
(D)光聚合引发剂的含量相对于(A)碱溶性聚酰亚胺100重量份优选为0.1~40重量份。在组合使用两种以上光聚合引发剂的情况下,优选其总量在该范围。如果(D)光聚合引发剂的含量为0.1重量份以上,则曝光时的聚合性化合物的聚合反应充分进行。另外,如果含量为40重量份以下,则即使为厚膜也可以具有充分的光线透过率,可形成图案。另外,该含量最优选的范围可根据所选择的光聚合引发剂的种类在上述的范围中适当选择。
本发明的感光性粘合剂组合物优选进一步含有(E)具有芳香族基团但不具有缩水甘油基氨基的液态环氧化合物。(E)通过具有芳香族基团,使得感光性粘合剂组合物中芳香环相互作用,由此高温时的粘合强度变高。另外,(E)通过在室温为液态,不会损害碱水溶液的显影性,进而通过调整(E)对碱水溶液的溶解性,可控制感光性粘合剂组合物的残膜率和图案形状这样的图案加工性。此外,本发明中所谓的液态环氧化合物表示室温下为液态的环氧化合物。
作为(E)具有芳香族基团但不具有缩水甘油基氨基的液态环氧化合物,可以举出双酚A型缩水甘油基醚环氧树脂、双酚F型缩水甘油基醚环氧树脂等。作为(E)成分,具体可以举出850-S、830-S(商品名、DIC株式会社制造)、EP-4000S、EP-4000L、EP-4003S、EP-4010S(商品名、(株)ADEKA制造)、jER-828US、jER-YL983U(商品名、三菱化学株式会社制造)等。
本发明的感光性粘合剂组合物根据需要可以含有表面活性剂以提高感光性粘合剂组合物与基板的密合性。
本发明的感光性粘合剂组合物可以含有无机颗粒。通过含有无机颗粒,可以形成正锥形或矩形的图案。另外,具有抑制制成感光性树脂组合物膜时的粘性的效果。进而具有提高固化膜的耐化学药品性、耐热性、耐湿性等特性的效果。
用于本发明的无机颗粒的平均粒径优选为20nm以上至1μm以下。感光性树脂组合物中的无机颗粒存在处于凝集完全散开的一次颗粒状态的颗粒和处于多个一次颗粒凝集的状态的颗粒。此处,所谓无机颗粒的粒径,未凝集的一次颗粒是指其颗粒的粒径,一次颗粒凝集的颗粒是指构成其凝集体的一次颗粒的粒径。作为测定感光性树脂组合物中的无机颗粒的平均粒径的方法,可以举出:利用SEM(扫描型电子显微镜)或TEM(透过型电子显微镜)直接观察颗粒,计算出粒径的平均值的方法。(c)无机颗粒的平均粒径为20nm以上时,相对于颗粒体积的比表面积变小,所以颗粒的分散性提高,进而,可以抑制涂布后的表面的凹凸或针孔,提高制作感光性树脂组合物膜时的涂布性。另一方面,平均粒径为1μm以下时,感光性树脂组合物溶液中的无机颗粒的沉降受到抑制,进而,可以抑制涂布后的表面的凹凸或针孔,提高制作感光性树脂组合物膜时的涂布性。另外,从固化膜的耐化学药品性提高的方面考虑,平均粒径更优选为0.5μm以下,进一步优选为0.1μm以下。
作为无机颗粒,例如,可以举出滑石、烧制粘土、未烧制粘土、云母、玻璃等硅酸盐、二氧化钛、氧化铝、二氧化硅等氧化物、碳酸钙、碳酸镁等碳酸盐、氢氧化铝、氢氧化镁、氢氧化钙等氢氧化物、硫酸钡、硫酸钙、亚硫酸钙等硫酸盐或亚硫酸盐、硼酸锌、偏硼酸钡、硼酸铝、硼酸钙、硼酸钠等硼酸盐、氮化铝、氮化硼、氮化硅等氮化物等。可以含有多种这些无机颗粒,但从可靠性、成本的方面考虑,优选二氧化硅、二氧化钛。为了改善分散性、沉降性,这些无机颗粒更优选用硅烷偶联剂等实施了表面处理。作为硅烷偶联剂,只要与感光性树脂组合物膜的树脂成分的相容性好即可,优选为乙烯基类、甲基丙烯酸类、丙烯酸类、环氧类或氨基类硅烷偶联剂,从加热固化感光性树脂组合物膜时树脂与无机颗粒进行共价键合的方面考虑,更优选乙烯基类、甲基丙烯酸类、丙烯酸类或环氧类。
另外,为了提高与硅晶片等底层基板的粘合性,也可以含有硅烷偶联剂、钛螯合剂等。
进而,本发明的感光性树脂组合物根据需要也可以含有交联剂、交联促进剂、增感剂、溶解调整剂、稳定剂、消泡剂等。
接下来,对于使用本发明的感光性粘合剂组合物制作感光性粘合剂膜的方法进行说明。本发明的感光性粘合剂膜是将感光性粘合剂组合物的溶液(清漆)涂布在支撑体上,接下来,根据需要将其干燥而得到的。感光性粘合剂组合物清漆可通过在感光性粘合剂组合物中添加有机溶剂来得到。作为此处所使用的有机溶剂,只要溶解感光性粘合剂组合物即可。
作为有机溶剂,具体可以举出乙二醇单甲醚、乙二醇单乙醚、丙二醇单甲醚、丙二醇单乙醚、乙二醇二甲醚、乙二醇二乙醚、乙二醇二丁醚等醚类;乙二醇单乙醚乙酸酯、丙二醇单甲醚乙酸酯、乙酸丙酯、乙酸丁酯、乙酸异丁酯、乙酸3-甲氧基丁酯、乙酸-3-甲基-3-甲氧基丁酯、乳酸甲酯、乳酸乙酯、乳酸丁酯等乙酸酯类;丙酮、甲乙酮、乙酰丙酮、甲基丙基酮、甲基丁基酮、甲基异丁基酮、环戊酮、2-庚酮等酮类;丁醇、异丁醇、戊醇、4-甲基-2-戊醇、3-甲基-2-丁醇、3-甲基-3-甲氧基丁醇、二丙酮醇等醇类;甲苯、二甲苯等芳香族烃类;以及N-甲基-2-吡咯烷酮、N-环己基-2-吡咯烷酮、N,N-二甲基甲酰胺、N,N-二甲基乙酰胺、二甲基亚砜、γ-丁内酯等。
另外,也可以使用滤纸、过滤器将感光性粘合剂组合物清漆过滤。对过滤方法没有特别限定,但优选使用保留粒径为0.4μm~10μm的过滤器通过加压过滤进行过滤的方法。
本发明的感光性粘合剂膜优选形成在支撑体上来使用。对支撑体没有特别限定,可使用聚对苯二甲酸乙二醇酯(PET)膜、聚苯硫醚膜、聚酰亚胺膜等通常市售的各种膜。为了提高密合性和剥离性,对支撑体与感光性粘合剂膜的接合面可以用硅酮、硅烷偶联剂、铝螯合剂、聚脲等实施表面处理。另外,对支撑体的厚度没有特别限定,然而从操作性的观点出发,优选为10~100μm的范围。
另外,为了保护表面,本发明的感光性粘合剂膜也可以在膜上具有保护膜。由此,可以保护感光性粘合剂膜表面免受大气中的尘土或尘垢等污染物质的影响。
作为保护膜,可以举出聚烯烃膜、聚酯膜等。保护膜优选为与感光性粘合剂膜的粘合力小的膜。
作为将感光性粘合剂组合物清漆涂布在支撑体上的方法,可以举出使用了旋转器的旋涂、喷雾涂布、辊涂、丝网印刷、使用了刮板式涂布机、模涂机、压延涂布机、凹液面涂布机、棒涂布机、辊涂机、逗号辊涂机、凹版涂布机、丝网涂布机、挤压式涂布机等的方法。另外,涂布膜厚根据涂布方法、组合物的固态成分浓度、粘度等的不同而不同,但是通常优选干燥后的膜厚为0.5μm以上至100μm以下。
干燥可以使用烘箱、加热板、红外线等。干燥温度和干燥时间只要是能够使有机溶剂挥发的范围即可,优选适当设定感光性粘合剂膜成为未固化或半固化状态那样的范围。具体地说,优选在40℃至120℃的范围干燥1分钟至数十分钟。另外,也可以组合这些温度,进行阶段性升温,例如可以在70℃、80℃、90℃各进行1分钟热处理。
接下来,举例说明对本发明的感光性粘合剂组合物或使用其的感光性粘合剂膜进行图案加工的方法、和热压接在其他构件上的方法。
首先,对于利用本发明的感光性粘合剂组合物清漆或使用其的感光性粘合剂膜,在基板上形成感光性粘合剂组合物被膜的方法进行说明。在利用感光性粘合剂组合物清漆的情况下,首先将清漆涂布在基板上。作为涂布方法,可以举出使用了旋转器的旋转涂布、喷雾涂布、辊涂、丝网印刷等方法。另外,涂布膜厚根据涂布方法、树脂组合物的固态成分浓度和粘度等的不同而不同,但是通常优选以干燥后的膜厚成为0.5μm以上至100μm以下的方式进行涂布。接着,将涂布了感光性粘合剂组合物清漆的基板干燥,得到感光性粘合剂组合物被膜。干燥可以使用烘箱、加热板、红外线等。干燥温度和干燥时间只要为能够使有机溶剂挥发的范围即可,优选适当设定感光性粘合剂组合物被膜成为未固化或半固化状态那样的范围。具体地说,优选在50~150℃的范围干燥1分钟至数小时。
另一方面,在利用感光性粘合剂膜的情况下,当具有保护膜时,将保护膜剥离,使感光性粘合剂膜与基板相对,通过热压接而贴合,得到感光性粘合剂组合物被膜。热压接可以通过热压处理、热层合处理、热真空层合处理等进行。从对基板的密合性和埋入性的方面考虑,贴合温度优选40℃以上。另外,为了防止贴合时感光性粘合剂膜固化而导致曝光·显影工序中的图案形成时的分辨率变差,贴合温度优选150℃以下。
任一情况下,作为所用的基板,可以举出硅晶片、陶瓷类、镓砷、有机类电路基板、无机类电路基板和在这些基板上配置有电路的构成材料的基板等,但不限于这些。作为有机类电路基板的例子,可以举出玻璃布·环氧铜箔叠层板等玻璃基材铜箔叠层板;玻璃无纺布·环氧铜箔叠层板等复合铜箔叠层板;聚醚酰亚胺树脂基板、聚醚酮树脂基板、聚砜类树脂基板等耐热·热塑性基板;聚酯铜箔膜基板、聚酰亚胺铜箔膜基板等挠性基板。另外,作为无机类电路基板的例子,可以举出氧化铝基板、氮化铝基板、碳化硅基板等陶瓷基板;铝原料基板、铁原料基板等金属类基板。作为电路的构成材料的例子,可以举出含有银、金、铜等金属的导体、含有无机类氧化物等的电阻器、含有玻璃类材料和/或树脂等的低电介质、含有树脂或高介电常数无机颗粒等的高电介质、含有玻璃类材料等的绝缘体等。
接下来,在通过上述方法形成的感光性粘合剂组合物被膜上,通过具有所期望的图案的掩模照射化学射线,进行曝光。作为用于曝光的化学射线,有紫外线、可见光线、电子射线、X射线等。本发明中优选使用汞灯的i射线(365nm)、h射线(405nm)或g射线(436nm)。在感光性粘合剂膜中,当支撑体为对这些光线透明的材质时,也可以不从感光性粘合剂膜上剥离支撑体而进行曝光。
形成图案时,曝光后使用显影液将未曝光部除去。作为显影液,优选四甲基铵的水溶液、二乙醇胺、二乙基氨基乙醇、氢氧化钠、氢氧化钾、碳酸钠、碳酸钾、三乙胺、二乙胺、甲胺、二甲胺、乙酸二甲氨基乙酯、二甲氨基乙醇、甲基丙烯酸二甲氨基乙酯、环己胺、乙二胺、1,6-己二胺等显示碱性的化合物的水溶液。另外,根据情况,也可以在这些碱水溶液中含有N-甲基-2-吡咯烷酮、N,N-二甲基甲酰胺、N,N-二甲基乙酰胺、二甲基亚砜、γ-丁内酯、二甲基丙烯酰胺等极性溶剂;甲醇、乙醇、异丙醇等醇类;乳酸乙酯、丙二醇单甲醚乙酸酯等酯类;环戊酮、环己酮、异丁基酮、甲基异丁基酮等酮类等中的一种或数种的组合物。
显影可以通过将上述的显影液向被膜面喷雾、浸在显影液中、或一边浸渍一边施加超声波、一边使基板旋转一边将显影液喷雾等的方法进行。显影时间、显影步骤的显影液温度这些显影时的条件只要是可除去未曝光部的条件即可,为了加工微细图案、或除去图案间的残渣,优选在除去未曝光部后进一步进行显影。
显影后,也可以用水进行漂洗处理。在此,也可以将乙醇、异丙醇等醇类、乳酸乙酯、丙二醇单甲醚乙酸酯等酯类等添加在水中进行漂洗处理。
在显影时的图案分辨率提高、或显影条件的允许范围增大的情况下,也可以在显影前引入进行烘烤处理的工序。作为其温度,优选50~180℃的范围,特别地,更优选60~120℃的范围。烘烤时间优选5秒~数小时。
从减少残存在感光性粘合剂组合物被膜中的溶剂、挥发成分、水的观点考虑,优选在图案形成后在60~200℃的范围进行加热干燥。加热干燥时间优选1分钟~数小时。
将这样得到的形成有经图案化加工的感光性粘合剂组合物被膜的基板热压接在基板或其他构件上。热压接温度优选60~400℃的温度范围。另外,压接时的压力优选0.01~10MPa的范围。时间优选1秒~数分钟。
热压接后,施加120℃至400℃的温度,使感光性粘合剂组合物被膜成为固化膜。该加热处理实施5分钟至5小时,其为选择温度进行阶段性升温,或选择某温度范围连续升温。作为一例,可以举出在130℃、200℃各进行30分钟热处理、或者用2小时从室温升温至250℃的直线升温等的方法。此时,加热温度优选150℃以上、300℃以下的温度,更优选为180℃以上、250℃以下。
如此热压接得到的粘合体的粘合强度从粘合可靠性的观点考虑优选为40MPa以上。更优选为50MPa以上。
固化膜的膜厚可以任意设定,但优选为0.5μm以上至100μm以下。
接下来,作为本发明的感光性粘合剂组合物和感光性粘合剂膜的用途,对具备感光性粘合剂组合物被膜的半导体装置进行说明。此外,近年来提出了各种结构的半导体装置,本发明的感光性粘合剂组合物的用途并不受以下内容的限定。
本发明的感光性粘合剂组合物和感光性粘合剂膜适合作为用于粘合、固定或密封半导体元件、半导体装置、电路基板、金属配线材料的半导体用粘合剂使用。另外,本发明中所说的半导体装置并不只是为将半导体元件连接在基板上得到的装置、连接半导体元件之间或基板之间而得到的装置,是指可利用半导体元件的特性发挥功能的全部装置,电光学装置、半导体电路基板和含有它们的电子部件全都包含在半导体装置中。
使用本发明的感光性粘合剂组合物和感光性粘合剂膜的半导体装置的制造方法的一例如下。以使第一连接端子与第二连接端子相对的方式配置具有第一连接端子的第一电路构件和具有第二连接端子的第二电路构件。接着,使本发明的感光性粘合剂膜存在于上述相对配置的第一连接端子与第二连接端子之间,形成感光性粘合剂组合物被膜。或者,通过在第一连接端子面或第二连接端子面的任一方或者两方涂布感光性粘合剂组合物的清漆,并干燥,从而形成感光性粘合剂组合物被膜。接下来,将感光性粘合剂组合物被膜图案化,将应导通第一连接端子和第二连接端子的部分开口。其后,对第一电路构件和第二电路构件加热加压,将它们电连接。
电连接既可以先仅在任一电路构件的连接端子侧的面形成上述的感光性粘合剂组合物被膜后进行,也可以在第一和第二电路构件的连接端子侧的两个面形成上述的感光性粘合剂组合物被膜后进行。另外,也可以在第一电路构件和/或第二电路构件上形成贯通电极,在构件的单面和/或两面形成连接端子。作为这样的电路构件,可使用形成有镀覆凸块、凸点(stud bump)等凸块的半导体芯片、电阻器芯片、电容器芯片等芯片部件、具有TSV(硅通孔)电极的半导体芯片或硅中介层(Silicon Interposer)、玻璃环氧电路基板、膜电路基板等基板。通过使用两面具有连接端子的电路构件、即两面配线基板,反复进行上述那样的连接,可得到电路构件3维层积的半导体装置。
在上述的半导体装置的制造方法中,通过使用本发明的感光性粘合剂组合物和感光性粘合剂膜,可以得到固化后的粘合剂的端部比电路构件的端部更靠近内侧的半导体装置、即抑制了在将第一电路构件和第二电路构件加热加压后粘合剂超出电路构件外周(凸缘(fillets))的产生的半导体装置。通过抑制凸缘的产生,可减小半导体装置的安装面积,有助于半导体装置的轻薄短小化。在不使用本发明的感光性粘合剂组合物的情况下,通过预先不在电路构件的周边部形成粘合剂组合物被膜,也可与上述同样地抑制凸缘的产生。然而,该方法中,对位有很大困难,而且在加工成1片晶片时,在特定位置形成粘合剂组合物被膜非常困难。与此相对,使用本发明的感光性粘合剂组合物和感光性粘合剂膜的方法中,通过图案化除去电路构件周边部的感光性粘合剂组合物被膜,由此可以容易地得到抑制了凸缘产生的半导体装置。
抑制了凸缘产生的半导体装置的制造方法的一例如下。用与上述的半导体装置的制造方法相同的方法,在第一电路构件具有的第一连接端子面和第二电路构件具有的第二连接端子面中的至少一方形成感光性粘合剂组合物被膜。接着,通过感光性粘合剂组合物被膜的图案化,将应导通第一连接端子和第二连接端子的部分开口,同时除去第一电路构件和/或第二电路构件的周边部的感光性粘合剂组合物被膜。其后,使第一电路构件和第二电路构件的连接端子面相对,夹住感光性粘合剂组合物被膜,进行加热加压,将它们粘合。其结果,得到感光性粘合剂组合物被膜的固化物没有超出第一电路构件和第二电路构件的半导体装置。
另外,作为其他用途,通过在形成有由光电二极管、滤色器、微透镜阵列构成的CCD或CMOS图像传感器的硅晶片上贴上感光性粘合剂膜、或涂布感光性粘合剂组合物的清漆并干燥,形成感光性粘合剂组合物被膜。将其图案化后,在残留的图案上层合玻璃基板作为支撑基板,进行热压接。将其加热,使感光性粘合剂组合物被膜固化。如此,得到以图案化的感光性粘合剂组合物被膜的固化物作为间隔的半导体元件与玻璃基板粘合在一起的、中空结构的图像传感器。
实施例
以下基于实施例具体地说明本发明,但本发明并不限于此。
<合成的聚酰亚胺的酰亚胺化率>
首先,测定聚合物的红外吸收光谱,确认存在由聚酰亚胺引起的酰亚胺结构的吸收峰(1,780cm-1附近、1,377cm-1附近)。接下来,对于该聚合物,在350℃热处理1小时后,再次测定红外吸收光谱,比较热处理前和热处理后的1377cm-1附近的峰强度。将热处理后的聚合物的酰亚胺化率设定为100%,求出热处理前的聚合物的酰亚胺化率。
<合成的聚酰亚胺的Tg>
使用差示扫描量热计(SII Nanotechnology公司制造、EXSTARDSC6220),以升温速度20℃/分钟对聚酰亚胺粉体进行测定,将热量变化曲线的微分曲线显示最大值时的温度作为聚酰亚胺的Tg。
<对带凹凸的基板的低温下的热压接性的评价>
使用正型感光性聚酰亚胺涂层剂Photoneece PW-1000(商品名、东丽株式会社制造),在硅晶片上形成线/间隙=50/50μm的图案,得到带凹凸的硅晶片基板。凹凸的高度为5μm。接下来,将各实施例和比较例中制作的感光性粘合剂膜的保护膜剥离,使用层合装置((株)Takatori制造、VTM-200M)在处理台温度80℃、辊温度80℃、真空度150Pa、贴附速度5毫米/秒、贴附压力0.2MPa的条件下将该剥离面层合在硅晶片上。然后,剥离支撑体膜后,使用超高压汞灯,以曝光量1,000mJ/cm2(换算成i射线)进行曝光。将曝光后的带感光性粘合剂膜的硅晶片切断成50×50mm,使感光性粘合剂膜向上,载置于100℃的加热板上,保持30秒。30秒后,将切断成4×4mm的上述的带凹凸的硅晶片置于感光性粘合剂膜上,以压力0.3MPa进行30秒热压接。其后,自然冷却至室温后,用镊子夹住带凹凸的基板,在抬起基板时,将带凹凸的硅晶片与50mm见方的硅晶片粘合的情况设定为G,没有粘合的情况设定为F。
<分辨率的评价>
与上述同样地操作,在硅晶片上形成感光性粘合剂膜。然后,剥离支撑体膜后,在曝光装置上设置具有线/间隙=75/75、50/50、30/30μm的图案的掩模,在掩模与感光性粘合剂膜的曝光缝隙为100μm的条件下,使用超高压汞灯以曝光量400mJ/cm2(换算成i射线)进行曝光。曝光后,通过浸渍显影,用氢氧化四甲基铵的2.38%水溶液除去未曝光部,用水进行漂洗处理。显影时间设定为未曝光部完全溶解的时间的1.5倍。将这样得到的图案用光学显微镜进行观察,将图案的线上没有堵塞等异常时的最小的图案尺寸作为分辨率的评价。另外,将图案的线的L/S=75/75μm无法显影的情况、或显影时图案未残留在基板上的情况设定为F。
<残膜率的评价>
如上所述,进行曝光、显影后的曝光部的残膜率通过以下的式子算出。另外,在分辨率的评价中为F时,不进行分辨率的评价。
残膜率(%)=显影后的膜厚÷感光性树脂组合物膜的膜厚×100
<高温时的粘合强度的评价>
与上述同样地操作,在硅晶片上形成感光性粘合剂膜。然后,将支撑体膜剥离后,使用超高压汞灯,以曝光量1,000mJ/cm2(换算成i射线)进行曝光。曝光后,通过浸渍显影,用氢氧化四甲基铵的2.38%水溶液除去未曝光部,用水进行漂洗处理。显影时间设定为未曝光部完全溶解的时间的1.5倍。显影后,使用100℃的热风烘箱,进行15分钟加热干燥处理。将样品自然冷却至室温后,使感光性粘合剂膜向上,载置于100℃的加热板上,保持30秒。30秒后,将2×2mm的硅晶片置于感光性粘合剂膜上,以压力0.3MPa进行30秒热压接。其后,利用惰性气体烘箱(KOYO THERMO SYSTEMS株式会社制造、INL-60),在N2气氛下、于200℃热处理60分钟,得到硅晶片彼此粘合起来的样品。其后,使用晶片切变强度测试机(Dage系列4000),测定260℃的粘合强度。另外,对带凹凸的基板的低温下的热压接性为F时,不进行粘合强度的测定。
样品尺寸:2mm×2mm
测试速度:200μm/s
测试高度:300μm
各实施例和比较例中所用的聚酰亚胺通过以下的方法合成。
(合成例1)
在干燥氮气流下使2,2-双(3-氨基-4-羟苯基)六氟丙烷(以下称为BAHF)30.95g(0.0845摩尔)、1,3-双(3-氨基丙基)四甲基二硅氧烷1.24g(0.005摩尔)溶解在N-甲基吡咯烷酮(以下称为NMP)100g中。向其中与NMP30g一起添加双(3,4-二羧基苯基)醚二酸酐(以下称为ODPA)31.02g(0.1摩尔),在20℃搅拌1小时,接着在50℃搅拌4小时。向其中添加3-氨基苯酚2.5g(0.02摩尔),在50℃搅拌2小时后,在180℃搅拌5小时,得到树脂溶液。接下来,将树脂溶液投入水3L中,收集白色沉淀。通过过滤收集该沉淀,用水清洗3次后,在80℃的真空干燥机中干燥5小时。所得到的树脂粉体的酰亚胺化率为94%,Tg为197℃。
(合成例2)
在干燥氮气流下使BAHF 20.14g(0.055摩尔)、1,3-双(3-氨基丙基)四甲基二硅氧烷1.24g(0.005摩尔)、聚氧丙烯二胺(MITSUI FINECHEMICAL株式会社制造)7.14g(0.03摩尔)、作为封端剂的3-氨基苯酚2.5g(0.02摩尔)溶解在NMP 100g中。向其中与NMP 30g一起添加ODPA 31.02g(0.1摩尔),在50℃搅拌4小时。其后,在180℃搅拌5小时,得到树脂溶液。接着,将树脂溶液投入水3L中,收集白色沉淀。通过过滤收集该沉淀,用水清洗3次后,在80℃的真空干燥机中干燥5小时。所得到的树脂粉体的酰亚胺化率为95%,Tg为140℃。
(实施例1)
将作为(A)成分的在合成例1中得到的聚酰亚胺100g、作为(B)成分的jER-630(商品名、三菱化学株式会社制造)60g、作为(C)成分的BP-6EM(商品名、共荣社化学株式会社制造)60g和作为(D)成分的NCI-831(商品名、(株)ADEKA制造)5g溶解在丙二醇单甲醚乙酸酯/乳酸乙酯=40/60的比例的溶剂中。调整溶剂的添加量以使固态成分(以溶剂以外的添加物作为固态成分)浓度为45%。其后,使用保留粒径为2μm的过滤器进行加压过滤,得到感光性粘合剂组合物清漆。
使用逗号辊涂机将所得到的清漆涂布在厚度为38μm的PET膜上,于75℃干燥6分钟后,层合厚度为10μm的PP膜作为保护膜,得到感光性粘合剂膜。进行调整以使感光性粘合剂膜的膜厚为30μm。采用所得到的感光性粘合剂膜如上所述地进行对带凹凸的基板的低温下的热压接性、分辨率、残膜率、高温时的粘合强度的评价。将结果示于表3。
(实施例2~7、比较例1~4)
除将(A)~(E)成分的混合比如表1~2的记载所示进行变更以外,与实施例1同样地制作感光性粘合剂膜,并如上所述地进行对带凹凸的基板的低温下的热压接性、分辨率、残膜率、高温时的粘合强度的评价。将结果示于表3。
[表1]
[表2]
[表3]
在比较例1中,由于未使用(B)成分的环氧化合物,所以没有获得低温下的热压接性。如比较例2~3所示,仅使用与(B)成分不同的环氧化合物时,虽然粘合强度提高,但不可碱性显影(比较例2),相反,虽然可以碱性显影,但粘合强度未提高等(比较例3),无法得到满足所要求的特性的组合物。比较例4中,由于使用Tg小于160℃的聚酰亚胺,所以粘合强度未提高。
需要说明的是,表1、表2中使用的(B)、(C)、(E)的结构如下所示。
(实施例8)
将以实施例3的组成得到的感光性粘合剂组合物清漆通过利用旋转器的旋转涂布,进行涂布,在加热板上于100℃进行3分钟干燥。调整转速以使干燥后的膜厚为30μm。其后,如上所述进行对带凹凸的基板的低温下的热压接性、分辨率、高温时的粘合强度的评价。此时,对带凹凸的基板的低温下的热压接性为G,分辨率为L/S=50/50,高温时的粘合强度为10MPa。
(实施例9)
与实施例1同样地得到感光性粘合剂膜。接下来,剥离感光性粘合剂膜的保护膜,使用层合装置((株)Takatori制造、VTM-200M)在处理台温度80℃、辊温度80℃、真空度150Pa、贴附速度5毫米/秒、贴附压力0.2MPa的条件下将该剥离面层合在带凸块电极(金凸点、芯片尺寸7.5mm见方)的半导体晶片(直径200mm、厚度625μm)的凸块电极形成面上,得到带感光性粘合剂组合物被膜的半导体晶片。
接下来,在曝光装置上设置掩模使半导体晶片内的半导体芯片周边300μm和金凸点部成为未曝光部,使用超高压汞灯以曝光量1,000mJ/cm2(i射线)进行曝光。曝光后,通过浸渍显影,用氢氧化四甲基铵的2.38%水溶液除去未曝光部,用水进行漂洗处理。显影后,利用100℃的热风烘箱进行15分钟加热干燥处理,得到除去了半导体晶片内的半导体芯片的周边部和凸块上的感光性粘合剂组合物被膜的、半导体晶片。
接着,将上述中得到的半导体晶片固定在带框(tape frame)和切割带上。固定通过使用晶圆贴膜机(TECHNOVISION株式会社制造、FM-114),在与凸块电极相反侧的晶片基板面贴合切割带(Lintec株式会社制造、D-650)来进行。
接下来,在以下所述的切削条件下进行切割。
切割装置:DAD-3350(DISCO株式会社制造)
半导体芯片尺寸:7.5×7.5mm
刀片:NBC-ZH2030-27HCDE
轴转速:30,000rpm
切削速度:25mm/s
切削深度:直至切割带的10μm的深度
切割:一次全切(one pass full cut)
切割模式:顺铣
切削水量:3.7L/分钟
切削水和冷却水:温度23℃、电导率0.5MΩ·cm(在超纯水中注入二氧化碳)
其结果,得到除去了半导体芯片的周边部的感光性粘合剂组合物被膜的半导体芯片(7.3mm见方)(图1(a))。
接下来,使用倒装芯片键合装置(东丽工程株式会社制造、FC-2000),将带感光性粘合剂组合物被膜的半导体芯片在成为被粘物的半导体芯片(金垫电极、7.5mm见方的半导体芯片)上进行倒装芯片键合。倒装芯片键合中,将成为被粘物的半导体芯片固定在加热为100℃的键合处理台上,在温度100℃、压力15N/芯片、时间5秒的条件下临时压接后,在温度200℃、压力200N/芯片的条件下进行10秒的正式压接,得到半导体芯片与半导体芯片粘合的半导体装置(图1(b))。
为了确认感光性粘合剂组合物被膜是否从半导体芯片超出,对所得到的半导体装置的上表面和截面进行光学显微镜观察。在从上表面进行的观察中,未见粘合剂超出半导体芯片外周。另外,截面观察的结果如图1(b)所示,粘合剂的端面止于半导体芯片的内侧。
产业上的可利用性
本发明的感光性粘合剂组合物和感光性粘合剂膜适合作为用于粘合、固定或密封半导体元件、半导体装置、电路基板、金属配线材料的半导体用粘合剂使用。
符号说明
100:带金凸点电极的半导体芯片
101:金凸点
102:感光性粘合剂组合物被膜
103:金垫
104:带金垫电极的半导体芯片
Claims (13)
1.一种感光性粘合剂组合物,含有(A)具有下述通式(1)所示的结构单元且在主链的至少一末端具有通式(2)和/或(3)所示的结构的碱溶性聚酰亚胺、(B)下述通式(4)或(5)所示的缩水甘油基胺型环氧化合物、(C)光聚合性化合物和(D)光聚合引发剂,其中,(A)碱溶性聚酰亚胺的玻璃化转变温度为160℃以上,
上述通式(1)~(3)中,Y表示具有至少一个选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的基团的一价有机基团,Z表示具有至少一个选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的基团的二价有机基团;另外,R1表示4~14价有机基团,R2表示2~12价有机基团,R3和R4各自独立地表示选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的至少一个基团;另外,α和β各自独立地表示0~10的整数,
上述通式(4)~(5)中,R5~R20可以分别相同或不同,为缩水甘油基醚基、下述通式(6)所示的基团、氢原子或碳原子数为1~5的烷基;其中,在通式(4)中,R5~R10中的至少1个为缩水甘油基醚基且至少1个为下述通式(6)所示的基团,或R5~R10中的至少2个为下述通式(6)所示的基团;另外,在通式(5)中,R11~R15中的至少1个和R16~R20中的至少1个为下述通式(6)所示的基团;另外,上述通式(5)中,X表示直接键合、碳原子数为1~6的亚烷基、醚基、硫醚基、磺酰基或亚芳基;亚烷基可以为链状也可以为环状,
上述通式(6)中,R21为缩水甘油基或碳原子数1~5的烷基。
2.如权利要求1所述的感光性粘合剂组合物,其中,通式(6)中,R21为缩水甘油基。
3.如权利要求1或2所述的感光性粘合剂组合物,其中,(A)碱溶性聚酰亚胺中所含的碱溶性基团为酚式羟基。
4.如权利要求1~3中任一项所述的感光性粘合剂组合物,其中,进一步含有(E)具有芳香族基团但不具有缩水甘油基氨基的液态环氧化合物。
5.一种感光性粘合剂膜,含有(A)具有下述通式(1)所示的结构单元且在主链的至少一末端具有通式(2)和/或(3)所示的结构的碱溶性聚酰亚胺、(B)下述通式(4)或(5)所示的缩水甘油基胺型环氧化合物、(C)光聚合性化合物和(D)光聚合引发剂,其中,(A)碱溶性聚酰亚胺的玻璃化转变温度为160℃以上,
上述通式(1)~(3)中,Y表示具有至少一个选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的基团的一价有机基团,Z表示具有至少一个选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的基团的二价有机基团;另外,R1表示4~14价有机基团,R2表示2~12价有机基团,R3和R4各自独立地表示选自由羧基、酚式羟基、磺酸基和硫醇基组成的组中的至少一个基团;另外,α和β各自独立地表示0~10的整数,
上述通式(4)~(5)中,R5~R20可以分别相同或不同,为缩水甘油基醚基、下述通式(6)所示的基团、氢原子或碳原子数为1~5的烷基;其中,在通式(4)中,R5~R10中的至少1个为缩水甘油基醚基且至少1个为下述通式(6)所示的基团,或R5~R10中的至少2个为下述通式(6)所示的基团;另外,在通式(5)中,R11~R15中的至少1个和R16~R20中的至少1个为下述通式(6)所示的基团;另外,上述通式(5)中,X表示直接键合、碳原子数为1~6的亚烷基、醚基、硫醚基、磺酰基或亚芳基;亚烷基可以为链状也可以为环状,
上述通式(6)中,R21为缩水甘油基或碳原子数1~5的烷基。
6.如权利要求5所述的感光性粘合剂膜,其中,通式(6)中,R21为缩水甘油基。
7.如权利要求5或6所述的感光性粘合剂膜,其中,(A)碱溶性聚酰亚胺中所含的碱溶性基团为酚式羟基。
8.如权利要求5~7中任一项所述的感光性粘合剂膜,其中,进一步含有(E)具有芳香族基团但不具有缩水甘油基氨基的液态环氧化合物。
9.权利要求1~4中任一项所述的感光性粘合剂组合物的固化物或权利要求5~8中任一项所述的感光性粘合剂膜的固化物。
10.一种半导体装置,具有权利要求1~4中任一项所述的感光性粘合剂组合物的固化物或权利要求5~8中任一项所述的感光性粘合剂膜的固化物。
11.一种半导体装置,在电路构件之间具有权利要求1~4中任一项所述的感光性粘合剂组合物的固化物或权利要求5~8中任一项所述的感光性粘合剂膜的固化物,所述固化物的端部存在于比电路构件的端部更靠近内侧的位置。
12.一种半导体装置,其是在第一电路构件具有的第一连接端子面和第二电路构件具有的第二连接端子面中的至少一方设置由权利要求1~4中任一项所述的感光性粘合剂组合物或权利要求5~8中任一项所述的感光性粘合剂膜形成的感光性粘合剂组合物被膜,通过图案化将所期望的位置开口后,通过加热加压将所述第一电路构件和第二电路构件电连接而得到的半导体装置,其中,所述感光性粘合剂组合物的固化物或感光性粘合剂膜的固化物的端部存在于比所述第一电路构件和第二电路构件的端部更靠近内侧的位置。
13.一种半导体装置的制造方法,其中,在第一电路构件具有的第一连接端子面和第二电路构件具有的第二连接端子面中的至少一方设置由权利要求1~4中任一项所述的感光性粘合剂组合物或权利要求5~8中任一项所述的感光性粘合剂膜形成的感光性粘合剂组合物被膜,通过图案化将所期望的位置开口后,通过加热加压将所述第一电路构件和所述第二电路构件电连接。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-156503 | 2010-07-09 | ||
JP2010156503 | 2010-07-09 | ||
PCT/JP2011/063308 WO2012005079A1 (ja) | 2010-07-09 | 2011-06-10 | 感光性接着剤組成物、感光性接着剤フィルムおよびこれらを用いた半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102985505A true CN102985505A (zh) | 2013-03-20 |
CN102985505B CN102985505B (zh) | 2014-08-20 |
Family
ID=45441065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180033589.XA Active CN102985505B (zh) | 2010-07-09 | 2011-06-10 | 感光性粘合剂组合物、感光性粘合剂膜和使用它们的半导体装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8759989B2 (zh) |
EP (1) | EP2592126B1 (zh) |
JP (1) | JP5935323B2 (zh) |
KR (1) | KR101823711B1 (zh) |
CN (1) | CN102985505B (zh) |
MY (1) | MY158488A (zh) |
TW (1) | TWI484297B (zh) |
WO (1) | WO2012005079A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106054535A (zh) * | 2015-04-08 | 2016-10-26 | 苏斯微技术光刻有限公司 | 用于将涂层施加到基板的方法与设备 |
CN108027564A (zh) * | 2015-04-21 | 2018-05-11 | 富士胶片电子材料美国有限公司 | 光敏性聚酰亚胺组合物 |
CN108931885A (zh) * | 2017-05-26 | 2018-12-04 | 台湾永光化学工业股份有限公司 | 低温固化的感光性树脂组合物及其用途 |
CN111247219A (zh) * | 2017-11-21 | 2020-06-05 | 三菱综合材料株式会社 | 绝缘覆膜形成用树脂、清漆、电沉积液、绝缘导体的制造方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5994266B2 (ja) * | 2012-02-03 | 2016-09-21 | 日立化成株式会社 | 感光性樹脂組成物、フィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ、及び半導体装置 |
SG11201406125PA (en) * | 2012-05-30 | 2014-11-27 | Toray Industries | Adhesive sheet for production of semiconductor device with bump electrode, and method for production of semiconductor device |
JP6225585B2 (ja) * | 2012-10-29 | 2017-11-08 | 日立化成デュポンマイクロシステムズ株式会社 | 耐熱性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
US10224258B2 (en) * | 2013-03-22 | 2019-03-05 | Applied Materials, Inc. | Method of curing thermoplastics with microwave energy |
JP6306296B2 (ja) * | 2013-07-09 | 2018-04-04 | 太陽インキ製造株式会社 | 感光性熱硬化性樹脂組成物およびフレキシブルプリント配線板 |
KR20160032009A (ko) * | 2013-07-16 | 2016-03-23 | 히타치가세이가부시끼가이샤 | 감광성 수지 조성물, 필름상 접착제, 접착 시트, 접착제 패턴, 접착제층이 형성된 반도체 웨이퍼 및 반도체 장치 |
TWI613517B (zh) * | 2013-07-18 | 2018-02-01 | Hitachi Chemical Co Ltd | 感光性樹脂組成物、薄膜狀黏著劑、黏著片、黏著劑圖案、附有黏著劑層之半導體晶圓及半導體裝置 |
JP6343980B2 (ja) * | 2014-03-12 | 2018-06-20 | 日立化成株式会社 | 半導体デバイスの製造方法 |
JP6363861B2 (ja) * | 2014-03-31 | 2018-07-25 | 太陽インキ製造株式会社 | 硬化性樹脂組成物、そのドライフィルムおよび硬化物、並びにそれらを用いて形成された硬化被膜を有するプリント配線板 |
JP2017122742A (ja) * | 2014-05-09 | 2017-07-13 | 日立化成株式会社 | ポジ型感光性接着剤組成物、接着剤パターン、接着剤層付半導体ウェハ及び半導体装置 |
JP2016011406A (ja) * | 2014-06-03 | 2016-01-21 | 太陽インキ製造株式会社 | 導電性接着剤およびそれを用いた電子部品 |
US9799625B2 (en) | 2015-06-12 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
TWI704418B (zh) * | 2015-06-30 | 2020-09-11 | 日商富士軟片股份有限公司 | 負型感光性樹脂組成物、硬化膜、硬化膜的製造方法及半導體元件 |
US10568210B2 (en) | 2015-09-02 | 2020-02-18 | At & S Austria Technologie & Systemtechnik Aktiengesellschaft | Electronic device with embedded electronic component |
JPWO2017169574A1 (ja) * | 2016-03-30 | 2019-02-14 | 東レ株式会社 | 感光性接着剤組成物、硬化物、感光性接着剤シート、積層基板および接着剤パターン付積層基板の製造方法 |
JP6837859B2 (ja) * | 2017-02-14 | 2021-03-03 | 株式会社ディスコ | ウエーハの加工方法 |
WO2018155547A1 (ja) * | 2017-02-23 | 2018-08-30 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物、硬化パターンの製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜、及び電子部品 |
TWI634182B (zh) * | 2017-07-03 | 2018-09-01 | 台虹科技股份有限公司 | 接著劑組成物 |
TWI690045B (zh) * | 2018-08-03 | 2020-04-01 | 欣興電子股份有限公司 | 構裝結構、其接合方法及用於其的線路板 |
TWI697078B (zh) | 2018-08-03 | 2020-06-21 | 欣興電子股份有限公司 | 封裝基板結構與其接合方法 |
US20210109443A1 (en) * | 2019-01-23 | 2021-04-15 | Microcosm Technology Co., Ltd. | Photosensitive polyimide resin composition and polyimide film thereof |
JP7271461B2 (ja) * | 2020-02-19 | 2023-05-11 | 信越化学工業株式会社 | 有機膜形成用材料およびパターン形成方法 |
TW202307090A (zh) * | 2021-05-17 | 2023-02-16 | 日商富士軟片股份有限公司 | 含聚醯亞胺部形成用組成物、接合體之製造方法、接合體、器件之製造方法及器件 |
WO2023120037A1 (ja) * | 2021-12-23 | 2023-06-29 | 富士フイルム株式会社 | 接合体の製造方法、接合体、積層体の製造方法、積層体、デバイスの製造方法、及び、デバイス、並びに、ポリイミド含有前駆体部形成用組成物 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101578345A (zh) * | 2007-01-12 | 2009-11-11 | 积水化学工业株式会社 | 电子部件用粘合剂 |
WO2010024087A1 (ja) * | 2008-08-27 | 2010-03-04 | 日立化成工業株式会社 | 感光性接着剤組成物、並びにそれを用いたフィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ及び半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004109403A1 (ja) | 2003-06-02 | 2004-12-16 | Toray Industries, Inc. | 感光性樹脂組成物およびそれを用いた電子部品ならびに表示装置 |
EP2333609A3 (en) | 2005-07-05 | 2013-03-27 | Hitachi Chemical Company, Ltd. | Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part |
JP5103870B2 (ja) * | 2006-11-02 | 2012-12-19 | 東レ株式会社 | 半導体用接着組成物、それを用いた半導体装置および半導体装置の製造方法 |
EP2108688A4 (en) | 2007-01-12 | 2011-09-07 | Sekisui Chemical Co Ltd | ADHESIVE FOR ELECTRONIC COMPONENTS |
JP2008239802A (ja) | 2007-03-27 | 2008-10-09 | Hitachi Chem Co Ltd | 感光性接着剤組成物、及び、基板の接着方法 |
KR20120085313A (ko) * | 2007-06-06 | 2012-07-31 | 히다치 가세고교 가부시끼가이샤 | 감광성 접착제 조성물, 필름상 접착제, 접착 시트, 접착제 패턴의 형성방법, 접착제층 부착 반도체 웨이퍼, 반도체 장치, 및, 반도체 장치의 제조방법 |
JP5439765B2 (ja) * | 2007-08-22 | 2014-03-12 | デクセリアルズ株式会社 | 新規なポリイミド樹脂及び感光性ポリイミド樹脂組成物 |
JP5332419B2 (ja) | 2007-12-19 | 2013-11-06 | 日立化成株式会社 | 感光性接着剤組成物、フィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ、半導体装置、及び、半導体装置の製造方法 |
JP5663826B2 (ja) * | 2008-02-26 | 2015-02-04 | 日立化成株式会社 | 接着シート、接着剤層付半導体ウェハ、並びに半導体装置及びその製造方法 |
-
2011
- 2011-06-10 KR KR1020127033833A patent/KR101823711B1/ko active IP Right Grant
- 2011-06-10 WO PCT/JP2011/063308 patent/WO2012005079A1/ja active Application Filing
- 2011-06-10 JP JP2011530184A patent/JP5935323B2/ja active Active
- 2011-06-10 CN CN201180033589.XA patent/CN102985505B/zh active Active
- 2011-06-10 US US13/808,782 patent/US8759989B2/en not_active Expired - Fee Related
- 2011-06-10 EP EP11803415.6A patent/EP2592126B1/en not_active Not-in-force
- 2011-06-10 MY MYPI2013700028A patent/MY158488A/en unknown
- 2011-07-04 TW TW100123506A patent/TWI484297B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101578345A (zh) * | 2007-01-12 | 2009-11-11 | 积水化学工业株式会社 | 电子部件用粘合剂 |
WO2010024087A1 (ja) * | 2008-08-27 | 2010-03-04 | 日立化成工業株式会社 | 感光性接着剤組成物、並びにそれを用いたフィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ及び半導体装置 |
Non-Patent Citations (1)
Title |
---|
全国不饱和聚酯树脂行业协作组: "新型含氮环氧树脂-YH-434、YH-434L", 《热固性树脂》 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106054535A (zh) * | 2015-04-08 | 2016-10-26 | 苏斯微技术光刻有限公司 | 用于将涂层施加到基板的方法与设备 |
CN106054535B (zh) * | 2015-04-08 | 2021-04-27 | 苏斯微技术光刻有限公司 | 用于将涂层施加到基板的方法与设备 |
CN108027564A (zh) * | 2015-04-21 | 2018-05-11 | 富士胶片电子材料美国有限公司 | 光敏性聚酰亚胺组合物 |
US11782344B2 (en) | 2015-04-21 | 2023-10-10 | Fujifilm Electronic Materials U.S.A., Inc. | Photosensitive polyimide compositions |
US11899364B2 (en) | 2015-04-21 | 2024-02-13 | Fujifilm Electronic Materials U.S.A., Inc. | Photosensitive polyimide compositions |
CN108931885A (zh) * | 2017-05-26 | 2018-12-04 | 台湾永光化学工业股份有限公司 | 低温固化的感光性树脂组合物及其用途 |
CN108931885B (zh) * | 2017-05-26 | 2021-08-13 | 台湾永光化学工业股份有限公司 | 低温固化的感光性树脂组合物及其用途 |
CN111247219A (zh) * | 2017-11-21 | 2020-06-05 | 三菱综合材料株式会社 | 绝缘覆膜形成用树脂、清漆、电沉积液、绝缘导体的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8759989B2 (en) | 2014-06-24 |
EP2592126B1 (en) | 2018-03-21 |
EP2592126A1 (en) | 2013-05-15 |
TW201202846A (en) | 2012-01-16 |
TWI484297B (zh) | 2015-05-11 |
KR101823711B1 (ko) | 2018-01-30 |
EP2592126A4 (en) | 2017-10-11 |
JPWO2012005079A1 (ja) | 2013-09-02 |
WO2012005079A1 (ja) | 2012-01-12 |
JP5935323B2 (ja) | 2016-06-15 |
CN102985505B (zh) | 2014-08-20 |
KR20130096644A (ko) | 2013-08-30 |
MY158488A (en) | 2016-10-14 |
US20130105998A1 (en) | 2013-05-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102985505B (zh) | 感光性粘合剂组合物、感光性粘合剂膜和使用它们的半导体装置 | |
CN102575139B (zh) | 感光性粘接剂组合物、感光性粘接剂片材和使用它们的半导体装置 | |
CN102985877B (zh) | 感光性树脂组合物、感光性树脂组合物膜和使用它们的半导体器件 | |
CN101681104A (zh) | 感光性粘结剂组合物、膜状粘结剂、粘结片、粘结剂图案的形成方法、具有粘结剂层的半导体晶片、半导体装置、以及半导体装置的制造方法 | |
JP5990965B2 (ja) | 感光性樹脂組成物およびそれからなるフィルム積層体 | |
JP7073717B2 (ja) | ジアミン化合物、それを用いた耐熱性樹脂および樹脂組成物 | |
JP2013083958A (ja) | 感光性樹脂組成物、それを用いた硬化物及び半導体素子 | |
TW201016815A (en) | Photosensitive adhesive composition, and film adhesive, adhesive sheet, adhesive pattern, semiconductor wafer with adhesive layer and semiconductor device using the photosensitive adhesive composition | |
JPWO2017169574A1 (ja) | 感光性接着剤組成物、硬化物、感光性接着剤シート、積層基板および接着剤パターン付積層基板の製造方法 | |
JP2009258471A (ja) | 感光性樹脂組成物フィルムおよびそれを用いたレジスト形成方法 | |
CN110419001A (zh) | 感光性树脂组合物、感光性树脂组合物膜、绝缘膜及电子部件 | |
CN107407871A (zh) | 感光性树脂组合物、感光性树脂组合物膜、固化物、绝缘膜及多层布线基板 | |
CN101868852A (zh) | 感光性胶粘剂、半导体装置及半导体装置的制造方法 | |
JP2011180472A (ja) | 感光性樹脂組成物フィルムおよびそれを用いた多層配線基板 | |
JP2008281597A (ja) | 感光性樹脂組成物シート | |
CN104302723A (zh) | 带有凸块电极的半导体器件制造用粘合剂片材及半导体器件的制造方法 | |
JP3407780B2 (ja) | 感光性樹脂組成物及びそのパターン形成方法 | |
JP2005206738A (ja) | 熱重合性及び放射性重合性接着シート並びにそれを用いた半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |