TWI481949B - 光罩基底、光罩及此等之製造方法 - Google Patents
光罩基底、光罩及此等之製造方法 Download PDFInfo
- Publication number
- TWI481949B TWI481949B TW098110706A TW98110706A TWI481949B TW I481949 B TWI481949 B TW I481949B TW 098110706 A TW098110706 A TW 098110706A TW 98110706 A TW98110706 A TW 98110706A TW I481949 B TWI481949 B TW I481949B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- light
- mask
- layer
- substrate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008093517A JP5530075B2 (ja) | 2008-03-31 | 2008-03-31 | フォトマスクブランク、フォトマスク及びこれらの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201003297A TW201003297A (en) | 2010-01-16 |
| TWI481949B true TWI481949B (zh) | 2015-04-21 |
Family
ID=41117763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098110706A TWI481949B (zh) | 2008-03-31 | 2009-03-31 | 光罩基底、光罩及此等之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8029948B2 (enExample) |
| JP (1) | JP5530075B2 (enExample) |
| KR (2) | KR101615284B1 (enExample) |
| DE (1) | DE102009014609B4 (enExample) |
| TW (1) | TWI481949B (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5562834B2 (ja) * | 2008-03-31 | 2014-07-30 | Hoya株式会社 | フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法 |
| TWI567483B (zh) * | 2008-09-30 | 2017-01-21 | Hoya股份有限公司 | A mask substrate, a mask, a manufacturing method thereof, and a method of manufacturing the semiconductor element |
| EP2209048B1 (en) * | 2009-01-15 | 2013-09-04 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing a photomask, and dry etching method |
| JP4853684B2 (ja) * | 2009-03-31 | 2012-01-11 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
| JP4847629B2 (ja) * | 2009-06-18 | 2011-12-28 | Hoya株式会社 | 転写用マスクの製造方法 |
| JP4797114B2 (ja) * | 2009-10-12 | 2011-10-19 | Hoya株式会社 | 転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP6084391B2 (ja) * | 2011-09-28 | 2017-02-22 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
| US9110281B2 (en) * | 2011-12-22 | 2015-08-18 | Qualcomm Mems Technologies, Inc. | Vertically etched facets for display devices |
| KR101269062B1 (ko) | 2012-06-29 | 2013-05-29 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법 |
| JP6371032B2 (ja) * | 2012-08-01 | 2018-08-08 | スリーエム イノベイティブ プロパティズ カンパニー | 反射防止ハードコートおよび反射防止物品 |
| JP5596111B2 (ja) * | 2012-12-05 | 2014-09-24 | Hoya株式会社 | 半導体デバイスの製造方法 |
| JP6263051B2 (ja) * | 2013-03-13 | 2018-01-17 | Hoya株式会社 | ハーフトーン型位相シフトマスクブランクの製造方法 |
| US9041135B2 (en) * | 2013-03-13 | 2015-05-26 | The Aerospace Corporation | Monolithic sun sensors assemblies thereof |
| JP2014191176A (ja) * | 2013-03-27 | 2014-10-06 | Dainippon Printing Co Ltd | フォトマスクブランクス、フォトマスク及びその製造方法 |
| WO2015015693A1 (ja) * | 2013-07-29 | 2015-02-05 | パナソニックIpマネジメント株式会社 | 回折光学素子、回折光学素子の製造方法および回折光学素子の製造方法に用いられる型 |
| WO2015037392A1 (ja) * | 2013-09-10 | 2015-03-19 | Hoya株式会社 | マスクブランク、転写用マスクおよび転写用マスクの製造方法 |
| JP6264238B2 (ja) * | 2013-11-06 | 2018-01-24 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法 |
| US9933698B2 (en) | 2014-03-18 | 2018-04-03 | Hoya Corporation | Mask blank, phase-shift mask and method for manufacturing semiconductor device |
| JP5775631B2 (ja) * | 2014-08-06 | 2015-09-09 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法 |
| JP2016057577A (ja) * | 2014-09-12 | 2016-04-21 | 信越化学工業株式会社 | フォトマスクブランク |
| KR102286886B1 (ko) * | 2014-11-18 | 2021-08-09 | 삼성디스플레이 주식회사 | 포토 마스크 및 이의 제조 방법 |
| JP6544964B2 (ja) * | 2015-03-31 | 2019-07-17 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法 |
| US10018905B2 (en) * | 2015-04-06 | 2018-07-10 | S & S Tech Co., Ltd | Phase shift blankmask and photomask |
| JP6621626B2 (ja) * | 2015-09-18 | 2019-12-18 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
| JP6558326B2 (ja) * | 2016-08-23 | 2019-08-14 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置 |
| KR20220006098A (ko) * | 2019-05-13 | 2022-01-14 | 코닝 인코포레이티드 | 낮은 반사율 전극 구조를 갖는 액체 렌즈 및 액체 렌즈 물품 |
| JP7163505B2 (ja) * | 2019-09-05 | 2022-10-31 | Hoya株式会社 | マスクブランク、位相シフトマスク及び半導体デバイスの製造方法 |
| JP7303077B2 (ja) * | 2019-09-10 | 2023-07-04 | アルバック成膜株式会社 | マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク |
| KR102850182B1 (ko) * | 2021-06-15 | 2025-08-25 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크 |
| KR102882817B1 (ko) * | 2021-06-15 | 2025-11-07 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002229183A (ja) * | 2000-12-01 | 2002-08-14 | Hoya Corp | リソグラフィーマスクブランク及びその製造方法 |
| JP2007241065A (ja) * | 2006-03-10 | 2007-09-20 | Shin Etsu Chem Co Ltd | フォトマスクブランク及びフォトマスク |
| JP2007241060A (ja) * | 2006-03-10 | 2007-09-20 | Shin Etsu Chem Co Ltd | フォトマスクブランク及びフォトマスクの製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003322954A (ja) | 2002-03-01 | 2003-11-14 | Hoya Corp | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| JP4619043B2 (ja) * | 2004-06-02 | 2011-01-26 | Hoya株式会社 | 位相シフトマスクの製造方法及びテンプレートの製造方法 |
| JP4407815B2 (ja) * | 2004-09-10 | 2010-02-03 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
| JP2006078825A (ja) * | 2004-09-10 | 2006-03-23 | Shin Etsu Chem Co Ltd | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
| JP4339214B2 (ja) | 2004-09-13 | 2009-10-07 | Hoya株式会社 | マスクブランク用透明基板とその製造方法及びマスクブランクとその製造方法 |
| JP4764214B2 (ja) * | 2006-03-10 | 2011-08-31 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスク及びその製造方法 |
| JP4881633B2 (ja) * | 2006-03-10 | 2012-02-22 | 凸版印刷株式会社 | クロムレス位相シフトマスク用フォトマスクブランク、クロムレス位相シフトマスク、及びクロムレス位相シフトマスクの製造方法 |
| JP2008093517A (ja) | 2006-10-06 | 2008-04-24 | Nakatomi Kogyo Kk | 循環式水洗トイレの廃棄物濾過装置 |
-
2008
- 2008-03-31 JP JP2008093517A patent/JP5530075B2/ja active Active
-
2009
- 2009-03-24 DE DE102009014609.1A patent/DE102009014609B4/de not_active Expired - Fee Related
- 2009-03-30 KR KR1020090026983A patent/KR101615284B1/ko active Active
- 2009-03-31 TW TW098110706A patent/TWI481949B/zh active
- 2009-03-31 US US12/415,429 patent/US8029948B2/en active Active
-
2011
- 2011-08-31 US US13/223,140 patent/US8323858B2/en active Active
-
2016
- 2016-04-08 KR KR1020160043501A patent/KR101724046B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002229183A (ja) * | 2000-12-01 | 2002-08-14 | Hoya Corp | リソグラフィーマスクブランク及びその製造方法 |
| JP2007241065A (ja) * | 2006-03-10 | 2007-09-20 | Shin Etsu Chem Co Ltd | フォトマスクブランク及びフォトマスク |
| JP2007241060A (ja) * | 2006-03-10 | 2007-09-20 | Shin Etsu Chem Co Ltd | フォトマスクブランク及びフォトマスクの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201003297A (en) | 2010-01-16 |
| KR101724046B1 (ko) | 2017-04-06 |
| US20090246647A1 (en) | 2009-10-01 |
| KR20160045652A (ko) | 2016-04-27 |
| KR101615284B1 (ko) | 2016-04-25 |
| JP5530075B2 (ja) | 2014-06-25 |
| US8029948B2 (en) | 2011-10-04 |
| KR20090104733A (ko) | 2009-10-06 |
| US20110318674A1 (en) | 2011-12-29 |
| JP2009244752A (ja) | 2009-10-22 |
| DE102009014609A1 (de) | 2009-12-17 |
| US8323858B2 (en) | 2012-12-04 |
| DE102009014609B4 (de) | 2020-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI481949B (zh) | 光罩基底、光罩及此等之製造方法 | |
| KR101586344B1 (ko) | 포토마스크 블랭크, 포토마스크 및 그 제조 방법 | |
| JP5602930B2 (ja) | マスクブランクおよび転写用マスク | |
| KR101394715B1 (ko) | 포토 마스크의 제조방법 및 포토 마스크 블랭크 | |
| TWI446103B (zh) | A mask substrate, a photomask and a method of manufacturing the same, and a method of manufacturing the semiconductor element | |
| KR101780068B1 (ko) | 마스크 블랭크 및 전사용 마스크의 제조 방법 | |
| TWI453529B (zh) | 相偏移光罩基底及相偏移光罩之製造方法 | |
| TWI463249B (zh) | 光罩基底、光罩及其等之製造方法 | |
| TWI467316B (zh) | 光罩之製造方法 | |
| TWI598679B (zh) | 半導體裝置之製造方法 | |
| JP5317310B2 (ja) | マスクブランク及び転写用マスクの製造方法 | |
| JP5666218B2 (ja) | マスクブランク、転写用マスク、および転写用マスクセット | |
| KR20180026766A (ko) | 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 | |
| WO2010050447A1 (ja) | フォトマスクブランク、フォトマスク及びその製造方法 | |
| TW201704848A (zh) | 半色調相位移空白光罩、半色調相位移光罩及圖型曝光方法 | |
| WO2019230312A1 (ja) | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 | |
| JP4831368B2 (ja) | グレートーンマスクブランク及びグレートーンマスク | |
| JP6321125B2 (ja) | マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法 | |
| JP5829302B2 (ja) | フォトマスクブランクの製造方法およびフォトマスクの製造方法 | |
| JP5362388B2 (ja) | フォトマスクの製造方法及びパターン転写方法 |