JP5530075B2 - フォトマスクブランク、フォトマスク及びこれらの製造方法 - Google Patents

フォトマスクブランク、フォトマスク及びこれらの製造方法 Download PDF

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Publication number
JP5530075B2
JP5530075B2 JP2008093517A JP2008093517A JP5530075B2 JP 5530075 B2 JP5530075 B2 JP 5530075B2 JP 2008093517 A JP2008093517 A JP 2008093517A JP 2008093517 A JP2008093517 A JP 2008093517A JP 5530075 B2 JP5530075 B2 JP 5530075B2
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JP
Japan
Prior art keywords
film
light
layer
photomask
photomask blank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008093517A
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English (en)
Japanese (ja)
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JP2009244752A5 (enExample
JP2009244752A (ja
Inventor
雅広 橋本
浩之 岩下
淳志 小湊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2008093517A priority Critical patent/JP5530075B2/ja
Priority to DE102009014609.1A priority patent/DE102009014609B4/de
Priority to KR1020090026983A priority patent/KR101615284B1/ko
Priority to TW098110706A priority patent/TWI481949B/zh
Priority to US12/415,429 priority patent/US8029948B2/en
Publication of JP2009244752A publication Critical patent/JP2009244752A/ja
Publication of JP2009244752A5 publication Critical patent/JP2009244752A5/ja
Priority to US13/223,140 priority patent/US8323858B2/en
Application granted granted Critical
Publication of JP5530075B2 publication Critical patent/JP5530075B2/ja
Priority to KR1020160043501A priority patent/KR101724046B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2008093517A 2008-03-31 2008-03-31 フォトマスクブランク、フォトマスク及びこれらの製造方法 Active JP5530075B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2008093517A JP5530075B2 (ja) 2008-03-31 2008-03-31 フォトマスクブランク、フォトマスク及びこれらの製造方法
DE102009014609.1A DE102009014609B4 (de) 2008-03-31 2009-03-24 Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung
KR1020090026983A KR101615284B1 (ko) 2008-03-31 2009-03-30 포토마스크 블랭크 및 포토마스크
US12/415,429 US8029948B2 (en) 2008-03-31 2009-03-31 Photomask blank, photomask, and methods of manufacturing the same
TW098110706A TWI481949B (zh) 2008-03-31 2009-03-31 光罩基底、光罩及此等之製造方法
US13/223,140 US8323858B2 (en) 2008-03-31 2011-08-31 Photomask blank, photomask, and methods of manufacturing the same
KR1020160043501A KR101724046B1 (ko) 2008-03-31 2016-04-08 포토마스크 블랭크의 제조방법 및 포토마스크의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008093517A JP5530075B2 (ja) 2008-03-31 2008-03-31 フォトマスクブランク、フォトマスク及びこれらの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014086162A Division JP5829302B2 (ja) 2014-04-18 2014-04-18 フォトマスクブランクの製造方法およびフォトマスクの製造方法

Publications (3)

Publication Number Publication Date
JP2009244752A JP2009244752A (ja) 2009-10-22
JP2009244752A5 JP2009244752A5 (enExample) 2011-04-21
JP5530075B2 true JP5530075B2 (ja) 2014-06-25

Family

ID=41117763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008093517A Active JP5530075B2 (ja) 2008-03-31 2008-03-31 フォトマスクブランク、フォトマスク及びこれらの製造方法

Country Status (5)

Country Link
US (2) US8029948B2 (enExample)
JP (1) JP5530075B2 (enExample)
KR (2) KR101615284B1 (enExample)
DE (1) DE102009014609B4 (enExample)
TW (1) TWI481949B (enExample)

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JP2014197215A (ja) * 2008-09-30 2014-10-16 Hoya株式会社 フォトマスクブランク、フォトマスク及びその製造方法、並びに半導体デバイスの製造方法

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JP5562834B2 (ja) * 2008-03-31 2014-07-30 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法
EP2209048B1 (en) * 2009-01-15 2013-09-04 Shin-Etsu Chemical Co., Ltd. Method for manufacturing a photomask, and dry etching method
JP4853684B2 (ja) * 2009-03-31 2012-01-11 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4847629B2 (ja) * 2009-06-18 2011-12-28 Ｈｏｙａ株式会社 転写用マスクの製造方法
JP4797114B2 (ja) * 2009-10-12 2011-10-19 Ｈｏｙａ株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
JP6084391B2 (ja) * 2011-09-28 2017-02-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
US9110281B2 (en) * 2011-12-22 2015-08-18 Qualcomm Mems Technologies, Inc. Vertically etched facets for display devices
KR101269062B1 (ko) 2012-06-29 2013-05-29 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법
JP6371032B2 (ja) * 2012-08-01 2018-08-08 スリーエム イノベイティブ プロパティズ カンパニー 反射防止ハードコートおよび反射防止物品
JP5596111B2 (ja) * 2012-12-05 2014-09-24 Ｈｏｙａ株式会社 半導体デバイスの製造方法
JP6263051B2 (ja) * 2013-03-13 2018-01-17 Hoya株式会社 ハーフトーン型位相シフトマスクブランクの製造方法
US9041135B2 (en) * 2013-03-13 2015-05-26 The Aerospace Corporation Monolithic sun sensors assemblies thereof
JP2014191176A (ja) * 2013-03-27 2014-10-06 Dainippon Printing Co Ltd フォトマスクブランクス、フォトマスク及びその製造方法
WO2015015693A1 (ja) * 2013-07-29 2015-02-05 パナソニックＩｐマネジメント株式会社 回折光学素子、回折光学素子の製造方法および回折光学素子の製造方法に用いられる型
WO2015037392A1 (ja) * 2013-09-10 2015-03-19 Hoya株式会社 マスクブランク、転写用マスクおよび転写用マスクの製造方法
JP6264238B2 (ja) * 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
US9933698B2 (en) 2014-03-18 2018-04-03 Hoya Corporation Mask blank, phase-shift mask and method for manufacturing semiconductor device
JP5775631B2 (ja) * 2014-08-06 2015-09-09 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP2016057577A (ja) * 2014-09-12 2016-04-21 信越化学工業株式会社 フォトマスクブランク
KR102286886B1 (ko) * 2014-11-18 2021-08-09 삼성디스플레이 주식회사 포토 마스크 및 이의 제조 방법
JP6544964B2 (ja) * 2015-03-31 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
US10018905B2 (en) * 2015-04-06 2018-07-10 S & S Tech Co., Ltd Phase shift blankmask and photomask
JP6621626B2 (ja) * 2015-09-18 2019-12-18 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6558326B2 (ja) * 2016-08-23 2019-08-14 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置
KR20220006098A (ko) * 2019-05-13 2022-01-14 코닝 인코포레이티드 낮은 반사율 전극 구조를 갖는 액체 렌즈 및 액체 렌즈 물품
JP7163505B2 (ja) * 2019-09-05 2022-10-31 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
JP7303077B2 (ja) * 2019-09-10 2023-07-04 アルバック成膜株式会社 マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク
KR102850182B1 (ko) * 2021-06-15 2025-08-25 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
KR102882817B1 (ko) * 2021-06-15 2025-11-07 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크

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Publication number Priority date Publication date Assignee Title
JP2014197215A (ja) * 2008-09-30 2014-10-16 Hoya株式会社 フォトマスクブランク、フォトマスク及びその製造方法、並びに半導体デバイスの製造方法

Also Published As

Publication number Publication date
TW201003297A (en) 2010-01-16
KR101724046B1 (ko) 2017-04-06
US20090246647A1 (en) 2009-10-01
KR20160045652A (ko) 2016-04-27
KR101615284B1 (ko) 2016-04-25
US8029948B2 (en) 2011-10-04
KR20090104733A (ko) 2009-10-06
US20110318674A1 (en) 2011-12-29
JP2009244752A (ja) 2009-10-22
DE102009014609A1 (de) 2009-12-17
US8323858B2 (en) 2012-12-04
TWI481949B (zh) 2015-04-21
DE102009014609B4 (de) 2020-11-19

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