DE102009014609B4 - Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung - Google Patents

Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung Download PDF

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Publication number
DE102009014609B4
DE102009014609B4 DE102009014609.1A DE102009014609A DE102009014609B4 DE 102009014609 B4 DE102009014609 B4 DE 102009014609B4 DE 102009014609 A DE102009014609 A DE 102009014609A DE 102009014609 B4 DE102009014609 B4 DE 102009014609B4
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DE
Germany
Prior art keywords
layer
light
photomask
pattern
shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102009014609.1A
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German (de)
English (en)
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DE102009014609A1 (de
Inventor
Masahiro Hashimoto
Hiroyuku Iwashita
Atsushi Kominato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of DE102009014609A1 publication Critical patent/DE102009014609A1/de
Application granted granted Critical
Publication of DE102009014609B4 publication Critical patent/DE102009014609B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE102009014609.1A 2008-03-31 2009-03-24 Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung Expired - Fee Related DE102009014609B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008093517A JP5530075B2 (ja) 2008-03-31 2008-03-31 フォトマスクブランク、フォトマスク及びこれらの製造方法
JP2008-093517 2008-03-31

Publications (2)

Publication Number Publication Date
DE102009014609A1 DE102009014609A1 (de) 2009-12-17
DE102009014609B4 true DE102009014609B4 (de) 2020-11-19

Family

ID=41117763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009014609.1A Expired - Fee Related DE102009014609B4 (de) 2008-03-31 2009-03-24 Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
US (2) US8029948B2 (enExample)
JP (1) JP5530075B2 (enExample)
KR (2) KR101615284B1 (enExample)
DE (1) DE102009014609B4 (enExample)
TW (1) TWI481949B (enExample)

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US8512916B2 (en) * 2008-03-31 2013-08-20 Hoya Corporation Photomask blank, photomask, and method for manufacturing photomask blank
TWI476507B (zh) * 2008-09-30 2015-03-11 Ｈｏｙａ股份有限公司 A mask substrate, a mask, a manufacturing method thereof, and a method of manufacturing the semiconductor element
EP2209048B1 (en) * 2009-01-15 2013-09-04 Shin-Etsu Chemical Co., Ltd. Method for manufacturing a photomask, and dry etching method
JP4853684B2 (ja) * 2009-03-31 2012-01-11 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
KR101822801B1 (ko) * 2009-06-18 2018-01-29 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법
JP4797114B2 (ja) * 2009-10-12 2011-10-19 Ｈｏｙａ株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
JP6084391B2 (ja) * 2011-09-28 2017-02-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
US9678329B2 (en) * 2011-12-22 2017-06-13 Qualcomm Inc. Angled facets for display devices
KR101269062B1 (ko) * 2012-06-29 2013-05-29 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법
JP6371032B2 (ja) * 2012-08-01 2018-08-08 スリーエム イノベイティブ プロパティズ カンパニー 反射防止ハードコートおよび反射防止物品
JP5596111B2 (ja) * 2012-12-05 2014-09-24 Ｈｏｙａ株式会社 半導体デバイスの製造方法
JP6263051B2 (ja) * 2013-03-13 2018-01-17 Hoya株式会社 ハーフトーン型位相シフトマスクブランクの製造方法
US9041135B2 (en) * 2013-03-13 2015-05-26 The Aerospace Corporation Monolithic sun sensors assemblies thereof
JP2014191176A (ja) * 2013-03-27 2014-10-06 Dainippon Printing Co Ltd フォトマスクブランクス、フォトマスク及びその製造方法
JP6364626B2 (ja) * 2013-07-29 2018-08-01 パナソニックＩｐマネジメント株式会社 回折光学素子、回折光学素子の製造方法および回折光学素子の製造方法に用いられる型
WO2015037392A1 (ja) * 2013-09-10 2015-03-19 Hoya株式会社 マスクブランク、転写用マスクおよび転写用マスクの製造方法
JP6264238B2 (ja) * 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP5823655B1 (ja) 2014-03-18 2015-11-25 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP5775631B2 (ja) * 2014-08-06 2015-09-09 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP2016057577A (ja) * 2014-09-12 2016-04-21 信越化学工業株式会社 フォトマスクブランク
KR102286886B1 (ko) * 2014-11-18 2021-08-09 삼성디스플레이 주식회사 포토 마스크 및 이의 제조 방법
JP6544964B2 (ja) * 2015-03-31 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
US10018905B2 (en) * 2015-04-06 2018-07-10 S & S Tech Co., Ltd Phase shift blankmask and photomask
JP6621626B2 (ja) * 2015-09-18 2019-12-18 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6558326B2 (ja) * 2016-08-23 2019-08-14 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置
US20220206193A1 (en) * 2019-05-13 2022-06-30 Corning Incorporated Liquid lenses and liquid lens articles with low reflectivity electrode structures
US20220252972A1 (en) * 2019-09-05 2022-08-11 Hoya Corporation Mask blank, phase shift mask and method for producing semiconductor device
JP7303077B2 (ja) * 2019-09-10 2023-07-04 アルバック成膜株式会社 マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク
KR102882817B1 (ko) * 2021-06-15 2025-11-07 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
KR102850182B1 (ko) * 2021-06-15 2025-08-25 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크

Citations (1)

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JP2002229183A (ja) 2000-12-01 2002-08-14 Hoya Corp リソグラフィーマスクブランク及びその製造方法
JP2003322954A (ja) 2002-03-01 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP4619043B2 (ja) 2004-06-02 2011-01-26 Ｈｏｙａ株式会社 位相シフトマスクの製造方法及びテンプレートの製造方法
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP2006078825A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP4339214B2 (ja) 2004-09-13 2009-10-07 Ｈｏｙａ株式会社 マスクブランク用透明基板とその製造方法及びマスクブランクとその製造方法
JP4881633B2 (ja) * 2006-03-10 2012-02-22 凸版印刷株式会社 クロムレス位相シフトマスク用フォトマスクブランク、クロムレス位相シフトマスク、及びクロムレス位相シフトマスクの製造方法
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Also Published As

Publication number Publication date
US20110318674A1 (en) 2011-12-29
TW201003297A (en) 2010-01-16
JP5530075B2 (ja) 2014-06-25
US8029948B2 (en) 2011-10-04
KR20160045652A (ko) 2016-04-27
KR101615284B1 (ko) 2016-04-25
US20090246647A1 (en) 2009-10-01
TWI481949B (zh) 2015-04-21
DE102009014609A1 (de) 2009-12-17
KR20090104733A (ko) 2009-10-06
JP2009244752A (ja) 2009-10-22
KR101724046B1 (ko) 2017-04-06
US8323858B2 (en) 2012-12-04

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