DE102009014609B4 - Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung - Google Patents

Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung Download PDF

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Publication number
DE102009014609B4
DE102009014609B4 DE102009014609.1A DE102009014609A DE102009014609B4 DE 102009014609 B4 DE102009014609 B4 DE 102009014609B4 DE 102009014609 A DE102009014609 A DE 102009014609A DE 102009014609 B4 DE102009014609 B4 DE 102009014609B4
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DE
Germany
Prior art keywords
layer
light
photomask
pattern
shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102009014609.1A
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German (de)
English (en)
Other versions
DE102009014609A1 (de
Inventor
Masahiro Hashimoto
Hiroyuku Iwashita
Atsushi Kominato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of DE102009014609A1 publication Critical patent/DE102009014609A1/de
Application granted granted Critical
Publication of DE102009014609B4 publication Critical patent/DE102009014609B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE102009014609.1A 2008-03-31 2009-03-24 Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung Expired - Fee Related DE102009014609B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008093517A JP5530075B2 (ja) 2008-03-31 2008-03-31 フォトマスクブランク、フォトマスク及びこれらの製造方法
JP2008-093517 2008-03-31

Publications (2)

Publication Number Publication Date
DE102009014609A1 DE102009014609A1 (de) 2009-12-17
DE102009014609B4 true DE102009014609B4 (de) 2020-11-19

Family

ID=41117763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009014609.1A Expired - Fee Related DE102009014609B4 (de) 2008-03-31 2009-03-24 Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
US (2) US8029948B2 (enExample)
JP (1) JP5530075B2 (enExample)
KR (2) KR101615284B1 (enExample)
DE (1) DE102009014609B4 (enExample)
TW (1) TWI481949B (enExample)

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US8512916B2 (en) * 2008-03-31 2013-08-20 Hoya Corporation Photomask blank, photomask, and method for manufacturing photomask blank
WO2010038444A1 (ja) * 2008-09-30 2010-04-08 Hoya株式会社 フォトマスクブランク、フォトマスク及びその製造方法
EP2209048B1 (en) * 2009-01-15 2013-09-04 Shin-Etsu Chemical Co., Ltd. Method for manufacturing a photomask, and dry etching method
JP4853684B2 (ja) * 2009-03-31 2012-01-11 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
WO2010147172A1 (ja) * 2009-06-18 2010-12-23 Hoya株式会社 マスクブランク及び転写用マスク、並びに転写用マスクの製造方法
JP4797114B2 (ja) 2009-10-12 2011-10-19 Ｈｏｙａ株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
JP6084391B2 (ja) * 2011-09-28 2017-02-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
US9110281B2 (en) * 2011-12-22 2015-08-18 Qualcomm Mems Technologies, Inc. Vertically etched facets for display devices
KR101269062B1 (ko) 2012-06-29 2013-05-29 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법
JP6371032B2 (ja) * 2012-08-01 2018-08-08 スリーエム イノベイティブ プロパティズ カンパニー 反射防止ハードコートおよび反射防止物品
JP5596111B2 (ja) * 2012-12-05 2014-09-24 Ｈｏｙａ株式会社 半導体デバイスの製造方法
US9041135B2 (en) * 2013-03-13 2015-05-26 The Aerospace Corporation Monolithic sun sensors assemblies thereof
JP6263051B2 (ja) * 2013-03-13 2018-01-17 Hoya株式会社 ハーフトーン型位相シフトマスクブランクの製造方法
JP2014191176A (ja) * 2013-03-27 2014-10-06 Dainippon Printing Co Ltd フォトマスクブランクス、フォトマスク及びその製造方法
CN104520736A (zh) * 2013-07-29 2015-04-15 松下知识产权经营株式会社 衍射光学元件、衍射光学元件的制造方法、以及衍射光学元件的制造方法中使用的模具
US9726972B2 (en) * 2013-09-10 2017-08-08 Hoya Corporation Mask blank, transfer mask, and method for manufacturing transfer mask
JP6264238B2 (ja) * 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
KR101759046B1 (ko) 2014-03-18 2017-07-17 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
JP5775631B2 (ja) * 2014-08-06 2015-09-09 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP2016057577A (ja) * 2014-09-12 2016-04-21 信越化学工業株式会社 フォトマスクブランク
KR102286886B1 (ko) * 2014-11-18 2021-08-09 삼성디스플레이 주식회사 포토 마스크 및 이의 제조 방법
JP6544964B2 (ja) * 2015-03-31 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
US10018905B2 (en) * 2015-04-06 2018-07-10 S & S Tech Co., Ltd Phase shift blankmask and photomask
JP6621626B2 (ja) * 2015-09-18 2019-12-18 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6558326B2 (ja) * 2016-08-23 2019-08-14 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置
KR20220006098A (ko) * 2019-05-13 2022-01-14 코닝 인코포레이티드 낮은 반사율 전극 구조를 갖는 액체 렌즈 및 액체 렌즈 물품
KR20220052908A (ko) * 2019-09-05 2022-04-28 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
JP7303077B2 (ja) * 2019-09-10 2023-07-04 アルバック成膜株式会社 マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク
KR102850182B1 (ko) * 2021-06-15 2025-08-25 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
KR102882817B1 (ko) * 2021-06-15 2025-11-07 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크

Citations (1)

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US20070212618A1 (en) * 2006-03-10 2007-09-13 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask

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JP2003322954A (ja) 2002-03-01 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP4619043B2 (ja) 2004-06-02 2011-01-26 Ｈｏｙａ株式会社 位相シフトマスクの製造方法及びテンプレートの製造方法
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP2006078825A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP4339214B2 (ja) 2004-09-13 2009-10-07 Ｈｏｙａ株式会社 マスクブランク用透明基板とその製造方法及びマスクブランクとその製造方法
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JP2008093517A (ja) 2006-10-06 2008-04-24 Nakatomi Kogyo Kk 循環式水洗トイレの廃棄物濾過装置

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Also Published As

Publication number Publication date
KR101615284B1 (ko) 2016-04-25
US20110318674A1 (en) 2011-12-29
JP5530075B2 (ja) 2014-06-25
TW201003297A (en) 2010-01-16
TWI481949B (zh) 2015-04-21
KR101724046B1 (ko) 2017-04-06
KR20090104733A (ko) 2009-10-06
JP2009244752A (ja) 2009-10-22
DE102009014609A1 (de) 2009-12-17
US8323858B2 (en) 2012-12-04
US20090246647A1 (en) 2009-10-01
US8029948B2 (en) 2011-10-04
KR20160045652A (ko) 2016-04-27

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