TWI478296B - 樹脂密封型半導體裝置 - Google Patents
樹脂密封型半導體裝置 Download PDFInfo
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- TWI478296B TWI478296B TW099101642A TW99101642A TWI478296B TW I478296 B TWI478296 B TW I478296B TW 099101642 A TW099101642 A TW 099101642A TW 99101642 A TW99101642 A TW 99101642A TW I478296 B TWI478296 B TW I478296B
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- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H01L2924/01—Chemical elements
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10161—Shape being a cuboid with a rectangular active surface
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip
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- H01L2924/351—Thermal stress
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009026507 | 2009-02-06 | ||
| JP2009258415A JP5588150B2 (ja) | 2009-02-06 | 2009-11-11 | 樹脂封止型半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201036118A TW201036118A (en) | 2010-10-01 |
| TWI478296B true TWI478296B (zh) | 2015-03-21 |
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| TW099101642A TWI478296B (zh) | 2009-02-06 | 2010-01-21 | 樹脂密封型半導體裝置 |
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| US (2) | US8703532B2 (enExample) |
| JP (1) | JP5588150B2 (enExample) |
| KR (1) | KR101665963B1 (enExample) |
| CN (1) | CN101901788B (enExample) |
| TW (1) | TWI478296B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5642473B2 (ja) * | 2010-09-22 | 2014-12-17 | セイコーインスツル株式会社 | Bga半導体パッケージおよびその製造方法 |
| CN102786028B (zh) * | 2012-07-17 | 2015-05-06 | 西南交通大学 | 一种用于大面积摩擦诱导微/纳米加工的多针尖阵列的制作方法 |
| CN102832141A (zh) * | 2012-08-18 | 2012-12-19 | 孙青秀 | 一种基于框架的无载体式封装件的制作工艺 |
| TWM506375U (zh) * | 2013-07-03 | 2015-08-01 | 羅森伯格高頻技術公司 | 使用介電質塗層引線的晶粒封裝 |
| DE102015212177A1 (de) * | 2015-06-30 | 2017-01-05 | Osram Gmbh | Schaltungsträger für eine elektronische Schaltung und Verfahren zum Herstellen eines derartigen Schaltungsträgers |
| CN105489509A (zh) * | 2015-12-25 | 2016-04-13 | 华天科技(西安)有限公司 | 应用钢网印刷技术优化点胶工艺的光学传感芯片封装方法 |
| CN110517963A (zh) * | 2019-09-05 | 2019-11-29 | 合肥矽迈微电子科技有限公司 | 一种环膜结构注塑工艺 |
| JP7567797B2 (ja) * | 2019-09-13 | 2024-10-16 | 株式会社レゾナック | 積層体およびその製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200305264A (en) * | 2001-09-28 | 2003-10-16 | Mitsubishi Electric Corp | Semiconductor device and method of fabricating the same |
| WO2005060450A2 (en) * | 2003-12-09 | 2005-07-07 | Freescale Semiconductor, Inc. | Land grid array packaged device and method of forming same |
| JP2006066521A (ja) * | 2004-08-25 | 2006-03-09 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3129169B2 (ja) * | 1995-11-08 | 2001-01-29 | 富士通株式会社 | 半導体装置及びその製造方法 |
| KR100332378B1 (ko) * | 1999-09-11 | 2002-04-12 | 이병구 | 반도체 패키지의 솔더볼 마운팅 방법 |
| JP3823651B2 (ja) * | 2000-01-05 | 2006-09-20 | 松下電器産業株式会社 | 樹脂封止型半導体装置の製造方法 |
| JP2001230270A (ja) * | 2000-02-14 | 2001-08-24 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP3626075B2 (ja) | 2000-06-20 | 2005-03-02 | 九州日立マクセル株式会社 | 半導体装置の製造方法 |
| US20020033527A1 (en) * | 2000-09-19 | 2002-03-21 | Siliconware Precision Industries Co., Ltd. | Semiconductor device and manufacturing process thereof |
| US7297572B2 (en) * | 2001-09-07 | 2007-11-20 | Hynix Semiconductor, Inc. | Fabrication method for electronic system modules |
| CN1477703A (zh) * | 2002-08-02 | 2004-02-25 | ǧס������ҵ��ʽ���� | 焊球组件及其生产方法,形成焊块的方法 |
| JP2004319577A (ja) * | 2003-04-11 | 2004-11-11 | Dainippon Printing Co Ltd | 樹脂封止型半導体装置とその製造方法、および積層型樹脂封止型半導体装置 |
| JP2005194393A (ja) * | 2004-01-07 | 2005-07-21 | Hitachi Chem Co Ltd | 回路接続用接着フィルム及び回路接続構造体 |
| KR20050079399A (ko) * | 2004-02-05 | 2005-08-10 | 삼성전자주식회사 | 이방성도전필름 및 범프와, 이를 갖는 반도체 칩의 실장구조체 |
| US7205178B2 (en) * | 2004-03-24 | 2007-04-17 | Freescale Semiconductor, Inc. | Land grid array packaged device and method of forming same |
| US8169067B2 (en) * | 2006-10-20 | 2012-05-01 | Broadcom Corporation | Low profile ball grid array (BGA) package with exposed die and method of making same |
| KR100792663B1 (ko) * | 2006-12-01 | 2008-01-09 | 주식회사 동부하이텍 | 다층구조의 금속층으로 적층된 전자패키지용 플라스틱솔더볼의 제조방법 및 그로부터 제조된 플라스틱 솔더볼 |
| US20080308935A1 (en) * | 2007-06-18 | 2008-12-18 | Samsung Electronics Co., Ltd. | Semiconductor chip package, semiconductor package including semiconductor chip package, and method of fabricating semiconductor package |
| US8501088B2 (en) * | 2007-07-25 | 2013-08-06 | Nippon Steel & Sumikin Materials Co., Ltd. | Solder alloy, solder ball and electronic member having solder bump |
-
2009
- 2009-11-11 JP JP2009258415A patent/JP5588150B2/ja not_active Expired - Fee Related
-
2010
- 2010-01-21 TW TW099101642A patent/TWI478296B/zh not_active IP Right Cessation
- 2010-02-05 KR KR1020100011105A patent/KR101665963B1/ko not_active Expired - Fee Related
- 2010-02-05 CN CN201010113656.6A patent/CN101901788B/zh not_active Expired - Fee Related
- 2010-02-05 US US12/701,018 patent/US8703532B2/en not_active Expired - Fee Related
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2014
- 2014-01-08 US US14/150,153 patent/US9490224B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200305264A (en) * | 2001-09-28 | 2003-10-16 | Mitsubishi Electric Corp | Semiconductor device and method of fabricating the same |
| WO2005060450A2 (en) * | 2003-12-09 | 2005-07-07 | Freescale Semiconductor, Inc. | Land grid array packaged device and method of forming same |
| JP2006066521A (ja) * | 2004-08-25 | 2006-03-09 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9490224B2 (en) | 2016-11-08 |
| CN101901788A (zh) | 2010-12-01 |
| US20100200982A1 (en) | 2010-08-12 |
| JP2010206162A (ja) | 2010-09-16 |
| KR20100090666A (ko) | 2010-08-16 |
| JP5588150B2 (ja) | 2014-09-10 |
| US20140117544A1 (en) | 2014-05-01 |
| CN101901788B (zh) | 2014-10-29 |
| KR101665963B1 (ko) | 2016-10-24 |
| TW201036118A (en) | 2010-10-01 |
| US8703532B2 (en) | 2014-04-22 |
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