JP5588150B2 - 樹脂封止型半導体装置 - Google Patents

樹脂封止型半導体装置 Download PDF

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Publication number
JP5588150B2
JP5588150B2 JP2009258415A JP2009258415A JP5588150B2 JP 5588150 B2 JP5588150 B2 JP 5588150B2 JP 2009258415 A JP2009258415 A JP 2009258415A JP 2009258415 A JP2009258415 A JP 2009258415A JP 5588150 B2 JP5588150 B2 JP 5588150B2
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Japan
Prior art keywords
resin
semiconductor element
microball
semiconductor device
sealing body
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Expired - Fee Related
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JP2009258415A
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English (en)
Japanese (ja)
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JP2010206162A (ja
JP2010206162A5 (enExample
Inventor
紀幸 木村
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Seiko Instruments Inc
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Seiko Instruments Inc
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Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2009258415A priority Critical patent/JP5588150B2/ja
Priority to TW099101642A priority patent/TWI478296B/zh
Priority to KR1020100011105A priority patent/KR101665963B1/ko
Priority to CN201010113656.6A priority patent/CN101901788B/zh
Priority to US12/701,018 priority patent/US8703532B2/en
Publication of JP2010206162A publication Critical patent/JP2010206162A/ja
Publication of JP2010206162A5 publication Critical patent/JP2010206162A5/ja
Priority to US14/150,153 priority patent/US9490224B2/en
Application granted granted Critical
Publication of JP5588150B2 publication Critical patent/JP5588150B2/ja
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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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TW099101642A TWI478296B (zh) 2009-02-06 2010-01-21 樹脂密封型半導體裝置
CN201010113656.6A CN101901788B (zh) 2009-02-06 2010-02-05 树脂密封型半导体装置及其制造方法
US12/701,018 US8703532B2 (en) 2009-02-06 2010-02-05 Semiconductor device and manufacturing method thereof
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JP5642473B2 (ja) * 2010-09-22 2014-12-17 セイコーインスツル株式会社 Ｂｇａ半導体パッケージおよびその製造方法
CN102786028B (zh) * 2012-07-17 2015-05-06 西南交通大学 一种用于大面积摩擦诱导微/纳米加工的多针尖阵列的制作方法
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DE102015212177A1 (de) * 2015-06-30 2017-01-05 Osram Gmbh Schaltungsträger für eine elektronische Schaltung und Verfahren zum Herstellen eines derartigen Schaltungsträgers
CN105489509A (zh) * 2015-12-25 2016-04-13 华天科技（西安）有限公司 应用钢网印刷技术优化点胶工艺的光学传感芯片封装方法
CN110517963A (zh) * 2019-09-05 2019-11-29 合肥矽迈微电子科技有限公司 一种环膜结构注塑工艺
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Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3129169B2 (ja) * 1995-11-08 2001-01-29 富士通株式会社 半導体装置及びその製造方法
KR100332378B1 (ko) * 1999-09-11 2002-04-12 이병구 반도체 패키지의 솔더볼 마운팅 방법
JP3823651B2 (ja) * 2000-01-05 2006-09-20 松下電器産業株式会社 樹脂封止型半導体装置の製造方法
JP2001230270A (ja) * 2000-02-14 2001-08-24 Fujitsu Ltd 半導体装置及びその製造方法
JP3626075B2 (ja) 2000-06-20 2005-03-02 九州日立マクセル株式会社 半導体装置の製造方法
US20020033527A1 (en) * 2000-09-19 2002-03-21 Siliconware Precision Industries Co., Ltd. Semiconductor device and manufacturing process thereof
US7297572B2 (en) * 2001-09-07 2007-11-20 Hynix Semiconductor, Inc. Fabrication method for electronic system modules
JP4014912B2 (ja) * 2001-09-28 2007-11-28 株式会社ルネサステクノロジ 半導体装置
CN1477703A (zh) * 2002-08-02 2004-02-25 ǧס������ҵ��ʽ���� 焊球组件及其生产方法，形成焊块的方法
JP2004319577A (ja) * 2003-04-11 2004-11-11 Dainippon Printing Co Ltd 樹脂封止型半導体装置とその製造方法、および積層型樹脂封止型半導体装置
US7056766B2 (en) * 2003-12-09 2006-06-06 Freescale Semiconductor, Inc. Method of forming land grid array packaged device
JP2005194393A (ja) * 2004-01-07 2005-07-21 Hitachi Chem Co Ltd 回路接続用接着フィルム及び回路接続構造体
KR20050079399A (ko) * 2004-02-05 2005-08-10 삼성전자주식회사 이방성도전필름 및 범프와, 이를 갖는 반도체 칩의 실장구조체
US7205178B2 (en) * 2004-03-24 2007-04-17 Freescale Semiconductor, Inc. Land grid array packaged device and method of forming same
JP2006066521A (ja) * 2004-08-25 2006-03-09 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
US8169067B2 (en) * 2006-10-20 2012-05-01 Broadcom Corporation Low profile ball grid array (BGA) package with exposed die and method of making same
KR100792663B1 (ko) * 2006-12-01 2008-01-09 주식회사 동부하이텍 다층구조의 금속층으로 적층된 전자패키지용 플라스틱솔더볼의 제조방법 및 그로부터 제조된 플라스틱 솔더볼
US20080308935A1 (en) * 2007-06-18 2008-12-18 Samsung Electronics Co., Ltd. Semiconductor chip package, semiconductor package including semiconductor chip package, and method of fabricating semiconductor package
US8501088B2 (en) * 2007-07-25 2013-08-06 Nippon Steel & Sumikin Materials Co., Ltd. Solder alloy, solder ball and electronic member having solder bump

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KR20100090666A (ko) 2010-08-16
TWI478296B (zh) 2015-03-21
US20140117544A1 (en) 2014-05-01
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US8703532B2 (en) 2014-04-22

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