TWI478213B - Charge particle beam drawing device and charged particle beam drawing method - Google Patents
Charge particle beam drawing device and charged particle beam drawing method Download PDFInfo
- Publication number
- TWI478213B TWI478213B TW101142595A TW101142595A TWI478213B TW I478213 B TWI478213 B TW I478213B TW 101142595 A TW101142595 A TW 101142595A TW 101142595 A TW101142595 A TW 101142595A TW I478213 B TWI478213 B TW I478213B
- Authority
- TW
- Taiwan
- Prior art keywords
- opening
- particle beam
- charged particle
- drawing device
- aperture
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims description 54
- 238000000034 method Methods 0.000 title claims description 19
- 239000011148 porous material Substances 0.000 claims description 44
- 238000002834 transmittance Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 43
- 239000000463 material Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229920005994 diacetyl cellulose Polymers 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
- G21K5/08—Holders for targets or for other objects to be irradiated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31774—Multi-beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31776—Shaped beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011267800A JP5897888B2 (ja) | 2011-12-07 | 2011-12-07 | 荷電粒子ビーム描画装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201338015A TW201338015A (zh) | 2013-09-16 |
| TWI478213B true TWI478213B (zh) | 2015-03-21 |
Family
ID=48572280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101142595A TWI478213B (zh) | 2011-12-07 | 2012-11-15 | Charge particle beam drawing device and charged particle beam drawing method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8791422B2 (enExample) |
| JP (1) | JP5897888B2 (enExample) |
| KR (1) | KR101456193B1 (enExample) |
| TW (1) | TWI478213B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104335685B (zh) * | 2012-06-01 | 2017-10-03 | 西门子公司 | 用于使带电粒子偏转的偏转板和偏转设备 |
| JP6349944B2 (ja) * | 2014-05-13 | 2018-07-04 | 株式会社ニューフレアテクノロジー | 電子ビーム描画装置及び電子ビーム描画方法 |
| CN105070345A (zh) * | 2015-08-28 | 2015-11-18 | 上海核工程研究设计院 | 一种可拆式辐照监督样品盒 |
| KR102596854B1 (ko) | 2017-08-08 | 2023-11-02 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 차단 요소, 이러한 요소를 포함하는 노광 장치, 및 이러한 노광 장치를 사용하는 방법 |
| JP6819509B2 (ja) * | 2017-08-10 | 2021-01-27 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置 |
| JP7219660B2 (ja) * | 2019-04-09 | 2023-02-08 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及びアパーチャ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5097138A (en) * | 1989-08-07 | 1992-03-17 | Hitachi, Ltd. | Electron beam lithography system and method |
| US6797956B2 (en) * | 2002-01-10 | 2004-09-28 | Leo Elektronenmikroskopie Gmbh | Electron microscope with annular illuminating aperture |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0684492A (ja) * | 1992-03-09 | 1994-03-25 | Topcon Corp | 電子顕微鏡 |
| JP3288767B2 (ja) * | 1992-09-30 | 2002-06-04 | 株式会社東芝 | 荷電ビーム描画装置 |
| JP3118390B2 (ja) | 1995-03-16 | 2000-12-18 | ホーヤ株式会社 | 転写マスクの製造方法 |
| JPH08315760A (ja) * | 1995-05-23 | 1996-11-29 | Hitachi Ltd | ビーム成形絞りとその作成方法およびこれを用いた荷電粒子ビーム露光装置 |
| JP2785790B2 (ja) * | 1996-02-23 | 1998-08-13 | 日本電気株式会社 | 荷電粒子ビーム露光装置用アパーチャマスクとその製造方法 |
| JP3422226B2 (ja) * | 1997-07-16 | 2003-06-30 | 凸版印刷株式会社 | アパーチャ及びその製造方法 |
| JP2908433B1 (ja) | 1998-06-05 | 1999-06-21 | 株式会社東芝 | ビーム成形用アパーチャマスク及び荷電ビーム露光装置 |
| JP2000243335A (ja) * | 1999-02-18 | 2000-09-08 | Nippon Telegr & Teleph Corp <Ntt> | アパーチャ保持機構 |
| JP2002075849A (ja) | 2000-09-04 | 2002-03-15 | Advantest Corp | 電子ビーム露光装置、荷電粒子線を整形する部材及びその製造方法 |
| JP2002141271A (ja) | 2000-11-01 | 2002-05-17 | Advantest Corp | 電子ビーム露光装置 |
| JP2002237441A (ja) | 2001-02-08 | 2002-08-23 | Advantest Corp | スリット製造方法、スリット、及び電子ビーム露光装置 |
| DE602005012945D1 (de) * | 2005-07-20 | 2009-04-09 | Zeiss Carl Sms Gmbh | Teilchenstrahlbelichtungssystem und Vorrichtung zur Strahlbeeinflussung |
| DE102005040267B4 (de) * | 2005-08-24 | 2007-12-27 | Universität Karlsruhe | Verfahren zum Herstellen einer mehrschichtigen elektrostatischen Linsenanordnung, insbesondere einer Phasenplatte und derartige Phasenplatte |
| JP5275396B2 (ja) * | 2011-03-17 | 2013-08-28 | 株式会社東芝 | 電子ビーム照射装置 |
-
2011
- 2011-12-07 JP JP2011267800A patent/JP5897888B2/ja active Active
-
2012
- 2012-11-15 TW TW101142595A patent/TWI478213B/zh active
- 2012-12-06 KR KR1020120140874A patent/KR101456193B1/ko active Active
- 2012-12-06 US US13/706,903 patent/US8791422B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5097138A (en) * | 1989-08-07 | 1992-03-17 | Hitachi, Ltd. | Electron beam lithography system and method |
| US6797956B2 (en) * | 2002-01-10 | 2004-09-28 | Leo Elektronenmikroskopie Gmbh | Electron microscope with annular illuminating aperture |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130149646A1 (en) | 2013-06-13 |
| JP5897888B2 (ja) | 2016-04-06 |
| TW201338015A (zh) | 2013-09-16 |
| US8791422B2 (en) | 2014-07-29 |
| JP2013120833A (ja) | 2013-06-17 |
| KR20130064024A (ko) | 2013-06-17 |
| KR101456193B1 (ko) | 2014-11-03 |
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