TWI478213B - Charge particle beam drawing device and charged particle beam drawing method - Google Patents

Charge particle beam drawing device and charged particle beam drawing method Download PDF

Info

Publication number
TWI478213B
TWI478213B TW101142595A TW101142595A TWI478213B TW I478213 B TWI478213 B TW I478213B TW 101142595 A TW101142595 A TW 101142595A TW 101142595 A TW101142595 A TW 101142595A TW I478213 B TWI478213 B TW I478213B
Authority
TW
Taiwan
Prior art keywords
opening
particle beam
charged particle
drawing device
aperture
Prior art date
Application number
TW101142595A
Other languages
English (en)
Chinese (zh)
Other versions
TW201338015A (zh
Inventor
東矢高尚
小笠原宗博
Original Assignee
紐富來科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 紐富來科技股份有限公司 filed Critical 紐富來科技股份有限公司
Publication of TW201338015A publication Critical patent/TW201338015A/zh
Application granted granted Critical
Publication of TWI478213B publication Critical patent/TWI478213B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/08—Holders for targets or for other objects to be irradiated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electron Beam Exposure (AREA)
TW101142595A 2011-12-07 2012-11-15 Charge particle beam drawing device and charged particle beam drawing method TWI478213B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011267800A JP5897888B2 (ja) 2011-12-07 2011-12-07 荷電粒子ビーム描画装置

Publications (2)

Publication Number Publication Date
TW201338015A TW201338015A (zh) 2013-09-16
TWI478213B true TWI478213B (zh) 2015-03-21

Family

ID=48572280

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101142595A TWI478213B (zh) 2011-12-07 2012-11-15 Charge particle beam drawing device and charged particle beam drawing method

Country Status (4)

Country Link
US (1) US8791422B2 (enExample)
JP (1) JP5897888B2 (enExample)
KR (1) KR101456193B1 (enExample)
TW (1) TWI478213B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013178282A1 (de) * 2012-06-01 2013-12-05 Siemens Aktiengesellschaft Ablenkplatte und ablenkvorrichtung zum ablenken geladener teilchen
JP6349944B2 (ja) * 2014-05-13 2018-07-04 株式会社ニューフレアテクノロジー 電子ビーム描画装置及び電子ビーム描画方法
CN105070345A (zh) * 2015-08-28 2015-11-18 上海核工程研究设计院 一种可拆式辐照监督样品盒
WO2019031093A1 (en) 2017-08-08 2019-02-14 Mapper Lithography Ip B.V. CHARGED PARTICLE BLOCKING ELEMENT, EXPOSURE APPARATUS COMPRISING SUCH AN ELEMENT, AND METHOD OF USING SUCH AN EXPOSURE APPARATUS
JP6819509B2 (ja) * 2017-08-10 2021-01-27 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
JP7219660B2 (ja) * 2019-04-09 2023-02-08 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及びアパーチャ
DE102025103412A1 (de) 2025-01-30 2026-07-30 Carl Zeiss Multisem Gmbh Anordnung zum verformungsreduzierten Lagern einer Mikrooptik für ein Vielzahl-Teilchenstrahlsystem, Vielzahl-Teilchenstrahlsystem und Verfahren

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5097138A (en) * 1989-08-07 1992-03-17 Hitachi, Ltd. Electron beam lithography system and method
US6797956B2 (en) * 2002-01-10 2004-09-28 Leo Elektronenmikroskopie Gmbh Electron microscope with annular illuminating aperture

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0684492A (ja) * 1992-03-09 1994-03-25 Topcon Corp 電子顕微鏡
JP3288767B2 (ja) * 1992-09-30 2002-06-04 株式会社東芝 荷電ビーム描画装置
JP3118390B2 (ja) 1995-03-16 2000-12-18 ホーヤ株式会社 転写マスクの製造方法
JPH08315760A (ja) * 1995-05-23 1996-11-29 Hitachi Ltd ビーム成形絞りとその作成方法およびこれを用いた荷電粒子ビーム露光装置
JP2785790B2 (ja) * 1996-02-23 1998-08-13 日本電気株式会社 荷電粒子ビーム露光装置用アパーチャマスクとその製造方法
JP3422226B2 (ja) * 1997-07-16 2003-06-30 凸版印刷株式会社 アパーチャ及びその製造方法
JP2908433B1 (ja) 1998-06-05 1999-06-21 株式会社東芝 ビーム成形用アパーチャマスク及び荷電ビーム露光装置
JP2000243335A (ja) * 1999-02-18 2000-09-08 Nippon Telegr & Teleph Corp <Ntt> アパーチャ保持機構
JP2002075849A (ja) * 2000-09-04 2002-03-15 Advantest Corp 電子ビーム露光装置、荷電粒子線を整形する部材及びその製造方法
JP2002141271A (ja) * 2000-11-01 2002-05-17 Advantest Corp 電子ビーム露光装置
JP2002237441A (ja) * 2001-02-08 2002-08-23 Advantest Corp スリット製造方法、スリット、及び電子ビーム露光装置
EP1746630B1 (en) * 2005-07-20 2009-02-25 Carl Zeiss SMS GmbH Charged particle beam exposure system and beam manipulating arrangement
DE102005040267B4 (de) * 2005-08-24 2007-12-27 Universität Karlsruhe Verfahren zum Herstellen einer mehrschichtigen elektrostatischen Linsenanordnung, insbesondere einer Phasenplatte und derartige Phasenplatte
JP5275396B2 (ja) * 2011-03-17 2013-08-28 株式会社東芝 電子ビーム照射装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5097138A (en) * 1989-08-07 1992-03-17 Hitachi, Ltd. Electron beam lithography system and method
US6797956B2 (en) * 2002-01-10 2004-09-28 Leo Elektronenmikroskopie Gmbh Electron microscope with annular illuminating aperture

Also Published As

Publication number Publication date
KR20130064024A (ko) 2013-06-17
JP5897888B2 (ja) 2016-04-06
US20130149646A1 (en) 2013-06-13
KR101456193B1 (ko) 2014-11-03
JP2013120833A (ja) 2013-06-17
US8791422B2 (en) 2014-07-29
TW201338015A (zh) 2013-09-16

Similar Documents

Publication Publication Date Title
TW201338015A (zh) 荷電粒子束描畫裝置及荷電粒子束描畫方法
JP7030663B2 (ja) 半導体装置及び荷電粒子線露光装置
TWI612553B (zh) 多重帶電粒子束描繪裝置及多重帶電粒子束描繪方法
TWI399781B (zh) 荷電粒子束描繪裝置及荷電粒子束描繪方法
CN1252544C (zh) 电子束曝光的邻近效应修正方法及其应用
JP5525936B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US8468473B1 (en) Method for high volume e-beam lithography
CN103257529B (zh) 电子束描绘装置以及电子束描绘方法
TW200908089A (en) Writing method and charged particle beam writing apparatus
TWI743712B (zh) 多帶電粒子束描繪裝置
TWI594289B (zh) Blind aperture array and charged particle beam tracing device
TW201351055A (zh) 荷電粒子束描繪裝置及荷電粒子束描繪方法
KR20160000431A (ko) 표면 처리 장치
JP5662763B2 (ja) ステージ装置およびこれを用いた電子ビーム描画装置
JP2015153873A (ja) セトリング時間の取得方法
JP5859951B2 (ja) 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法
JP2016149400A (ja) 荷電粒子ビーム描画装置の評価方法
JP7219660B2 (ja) 荷電粒子ビーム描画装置及びアパーチャ
US9343323B2 (en) Method of producing aperture member
JP2015213115A (ja) 標的装置、リソグラフィ装置、および物品の製造方法
JP4649187B2 (ja) 荷電ビーム描画データの作成方法、荷電ビーム描画方法および荷電ビーム描画装置
JP2013115373A (ja) 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法
JP2007048804A (ja) 荷電ビーム描画装置及び荷電ビームの成形方法
JP2017084871A (ja) テンプレート基板およびその製造方法
TW202609872A (zh) 用於形成半導體通道之方法及其相關設備