KR101456193B1 - 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 - Google Patents

하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 Download PDF

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Publication number
KR101456193B1
KR101456193B1 KR1020120140874A KR20120140874A KR101456193B1 KR 101456193 B1 KR101456193 B1 KR 101456193B1 KR 1020120140874 A KR1020120140874 A KR 1020120140874A KR 20120140874 A KR20120140874 A KR 20120140874A KR 101456193 B1 KR101456193 B1 KR 101456193B1
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South Korea
Prior art keywords
aperture
opening
charged particle
particle beam
opening end
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KR1020120140874A
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Korean (ko)
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KR20130064024A (ko
Inventor
타카나오 토우야
무네히로 오가사와라
Original Assignee
가부시키가이샤 뉴플레어 테크놀로지
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/08—Holders for targets or for other objects to be irradiated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electron Beam Exposure (AREA)
KR1020120140874A 2011-12-07 2012-12-06 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 Active KR101456193B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011267800A JP5897888B2 (ja) 2011-12-07 2011-12-07 荷電粒子ビーム描画装置
JPJP-P-2011-267800 2011-12-07

Publications (2)

Publication Number Publication Date
KR20130064024A KR20130064024A (ko) 2013-06-17
KR101456193B1 true KR101456193B1 (ko) 2014-11-03

Family

ID=48572280

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120140874A Active KR101456193B1 (ko) 2011-12-07 2012-12-06 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법

Country Status (4)

Country Link
US (1) US8791422B2 (enExample)
JP (1) JP5897888B2 (enExample)
KR (1) KR101456193B1 (enExample)
TW (1) TWI478213B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104335685B (zh) * 2012-06-01 2017-10-03 西门子公司 用于使带电粒子偏转的偏转板和偏转设备
JP6349944B2 (ja) * 2014-05-13 2018-07-04 株式会社ニューフレアテクノロジー 電子ビーム描画装置及び電子ビーム描画方法
CN105070345A (zh) * 2015-08-28 2015-11-18 上海核工程研究设计院 一种可拆式辐照监督样品盒
KR102596854B1 (ko) 2017-08-08 2023-11-02 에이에스엠엘 네델란즈 비.브이. 하전 입자 차단 요소, 이러한 요소를 포함하는 노광 장치, 및 이러한 노광 장치를 사용하는 방법
JP6819509B2 (ja) * 2017-08-10 2021-01-27 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
JP7219660B2 (ja) * 2019-04-09 2023-02-08 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及びアパーチャ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232209A (ja) * 1996-02-23 1997-09-05 Nec Corp 荷電粒子ビーム露光装置用アパーチャマスクとその製造方法
KR20020018950A (ko) * 2000-09-04 2002-03-09 히로시 오우라 전자빔 노광장치, 하전 입자선을 정형하는 부재 및 그제조방법
JP2002237441A (ja) * 2001-02-08 2002-08-23 Advantest Corp スリット製造方法、スリット、及び電子ビーム露光装置
KR20030036786A (ko) * 2000-11-01 2003-05-09 주식회사 아도반테스토 전자빔 노광장치 및 전자빔 노광방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174716A (ja) * 1989-08-07 1991-07-29 Hitachi Ltd 電子ビーム描画装置および描画方式
JPH0684492A (ja) * 1992-03-09 1994-03-25 Topcon Corp 電子顕微鏡
JP3288767B2 (ja) * 1992-09-30 2002-06-04 株式会社東芝 荷電ビーム描画装置
JP3118390B2 (ja) 1995-03-16 2000-12-18 ホーヤ株式会社 転写マスクの製造方法
JPH08315760A (ja) * 1995-05-23 1996-11-29 Hitachi Ltd ビーム成形絞りとその作成方法およびこれを用いた荷電粒子ビーム露光装置
JP3422226B2 (ja) * 1997-07-16 2003-06-30 凸版印刷株式会社 アパーチャ及びその製造方法
JP2908433B1 (ja) 1998-06-05 1999-06-21 株式会社東芝 ビーム成形用アパーチャマスク及び荷電ビーム露光装置
JP2000243335A (ja) * 1999-02-18 2000-09-08 Nippon Telegr & Teleph Corp <Ntt> アパーチャ保持機構
DE10200645A1 (de) * 2002-01-10 2003-07-24 Leo Elektronenmikroskopie Gmbh Elektronenmikroskop mit ringförmiger Beleuchtungsapertur
DE602005012945D1 (de) * 2005-07-20 2009-04-09 Zeiss Carl Sms Gmbh Teilchenstrahlbelichtungssystem und Vorrichtung zur Strahlbeeinflussung
DE102005040267B4 (de) * 2005-08-24 2007-12-27 Universität Karlsruhe Verfahren zum Herstellen einer mehrschichtigen elektrostatischen Linsenanordnung, insbesondere einer Phasenplatte und derartige Phasenplatte
JP5275396B2 (ja) * 2011-03-17 2013-08-28 株式会社東芝 電子ビーム照射装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232209A (ja) * 1996-02-23 1997-09-05 Nec Corp 荷電粒子ビーム露光装置用アパーチャマスクとその製造方法
KR20020018950A (ko) * 2000-09-04 2002-03-09 히로시 오우라 전자빔 노광장치, 하전 입자선을 정형하는 부재 및 그제조방법
KR20030036786A (ko) * 2000-11-01 2003-05-09 주식회사 아도반테스토 전자빔 노광장치 및 전자빔 노광방법
JP2002237441A (ja) * 2001-02-08 2002-08-23 Advantest Corp スリット製造方法、スリット、及び電子ビーム露光装置

Also Published As

Publication number Publication date
US20130149646A1 (en) 2013-06-13
TWI478213B (zh) 2015-03-21
JP5897888B2 (ja) 2016-04-06
TW201338015A (zh) 2013-09-16
US8791422B2 (en) 2014-07-29
JP2013120833A (ja) 2013-06-17
KR20130064024A (ko) 2013-06-17

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