JP5897888B2 - 荷電粒子ビーム描画装置 - Google Patents

荷電粒子ビーム描画装置 Download PDF

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Publication number
JP5897888B2
JP5897888B2 JP2011267800A JP2011267800A JP5897888B2 JP 5897888 B2 JP5897888 B2 JP 5897888B2 JP 2011267800 A JP2011267800 A JP 2011267800A JP 2011267800 A JP2011267800 A JP 2011267800A JP 5897888 B2 JP5897888 B2 JP 5897888B2
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JP
Japan
Prior art keywords
opening
aperture
charged particle
particle beam
sample
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Active
Application number
JP2011267800A
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English (en)
Japanese (ja)
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JP2013120833A5 (enExample
JP2013120833A (ja
Inventor
高尚 東矢
高尚 東矢
小笠原　宗博
宗博 小笠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuflare Technology Inc
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Priority to JP2011267800A priority Critical patent/JP5897888B2/ja
Priority to TW101142595A priority patent/TWI478213B/zh
Priority to US13/706,903 priority patent/US8791422B2/en
Priority to KR1020120140874A priority patent/KR101456193B1/ko
Publication of JP2013120833A publication Critical patent/JP2013120833A/ja
Publication of JP2013120833A5 publication Critical patent/JP2013120833A5/ja
Application granted granted Critical
Publication of JP5897888B2 publication Critical patent/JP5897888B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/08—Holders for targets or for other objects to be irradiated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electron Beam Exposure (AREA)
JP2011267800A 2011-12-07 2011-12-07 荷電粒子ビーム描画装置 Active JP5897888B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011267800A JP5897888B2 (ja) 2011-12-07 2011-12-07 荷電粒子ビーム描画装置
TW101142595A TWI478213B (zh) 2011-12-07 2012-11-15 Charge particle beam drawing device and charged particle beam drawing method
US13/706,903 US8791422B2 (en) 2011-12-07 2012-12-06 Charged particle beam writing apparatus and charged particle beam writing method
KR1020120140874A KR101456193B1 (ko) 2011-12-07 2012-12-06 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011267800A JP5897888B2 (ja) 2011-12-07 2011-12-07 荷電粒子ビーム描画装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012268284A Division JP5859951B2 (ja) 2012-12-07 2012-12-07 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法

Publications (3)

Publication Number Publication Date
JP2013120833A JP2013120833A (ja) 2013-06-17
JP2013120833A5 JP2013120833A5 (enExample) 2014-12-18
JP5897888B2 true JP5897888B2 (ja) 2016-04-06

Family

ID=48572280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011267800A Active JP5897888B2 (ja) 2011-12-07 2011-12-07 荷電粒子ビーム描画装置

Country Status (4)

Country Link
US (1) US8791422B2 (enExample)
JP (1) JP5897888B2 (enExample)
KR (1) KR101456193B1 (enExample)
TW (1) TWI478213B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013178282A1 (de) * 2012-06-01 2013-12-05 Siemens Aktiengesellschaft Ablenkplatte und ablenkvorrichtung zum ablenken geladener teilchen
JP6349944B2 (ja) * 2014-05-13 2018-07-04 株式会社ニューフレアテクノロジー 電子ビーム描画装置及び電子ビーム描画方法
CN105070345A (zh) * 2015-08-28 2015-11-18 上海核工程研究设计院 一种可拆式辐照监督样品盒
WO2019031093A1 (en) 2017-08-08 2019-02-14 Mapper Lithography Ip B.V. CHARGED PARTICLE BLOCKING ELEMENT, EXPOSURE APPARATUS COMPRISING SUCH AN ELEMENT, AND METHOD OF USING SUCH AN EXPOSURE APPARATUS
JP6819509B2 (ja) * 2017-08-10 2021-01-27 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
JP7219660B2 (ja) * 2019-04-09 2023-02-08 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及びアパーチャ
DE102025103412A1 (de) 2025-01-30 2026-07-30 Carl Zeiss Multisem Gmbh Anordnung zum verformungsreduzierten Lagern einer Mikrooptik für ein Vielzahl-Teilchenstrahlsystem, Vielzahl-Teilchenstrahlsystem und Verfahren

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174716A (ja) * 1989-08-07 1991-07-29 Hitachi Ltd 電子ビーム描画装置および描画方式
JPH0684492A (ja) * 1992-03-09 1994-03-25 Topcon Corp 電子顕微鏡
JP3288767B2 (ja) * 1992-09-30 2002-06-04 株式会社東芝 荷電ビーム描画装置
JP3118390B2 (ja) 1995-03-16 2000-12-18 ホーヤ株式会社 転写マスクの製造方法
JPH08315760A (ja) * 1995-05-23 1996-11-29 Hitachi Ltd ビーム成形絞りとその作成方法およびこれを用いた荷電粒子ビーム露光装置
JP2785790B2 (ja) * 1996-02-23 1998-08-13 日本電気株式会社 荷電粒子ビーム露光装置用アパーチャマスクとその製造方法
JP3422226B2 (ja) * 1997-07-16 2003-06-30 凸版印刷株式会社 アパーチャ及びその製造方法
JP2908433B1 (ja) 1998-06-05 1999-06-21 株式会社東芝 ビーム成形用アパーチャマスク及び荷電ビーム露光装置
JP2000243335A (ja) * 1999-02-18 2000-09-08 Nippon Telegr & Teleph Corp <Ntt> アパーチャ保持機構
JP2002075849A (ja) * 2000-09-04 2002-03-15 Advantest Corp 電子ビーム露光装置、荷電粒子線を整形する部材及びその製造方法
JP2002141271A (ja) * 2000-11-01 2002-05-17 Advantest Corp 電子ビーム露光装置
JP2002237441A (ja) * 2001-02-08 2002-08-23 Advantest Corp スリット製造方法、スリット、及び電子ビーム露光装置
DE10200645A1 (de) * 2002-01-10 2003-07-24 Leo Elektronenmikroskopie Gmbh Elektronenmikroskop mit ringförmiger Beleuchtungsapertur
EP1746630B1 (en) * 2005-07-20 2009-02-25 Carl Zeiss SMS GmbH Charged particle beam exposure system and beam manipulating arrangement
DE102005040267B4 (de) * 2005-08-24 2007-12-27 Universität Karlsruhe Verfahren zum Herstellen einer mehrschichtigen elektrostatischen Linsenanordnung, insbesondere einer Phasenplatte und derartige Phasenplatte
JP5275396B2 (ja) * 2011-03-17 2013-08-28 株式会社東芝 電子ビーム照射装置

Also Published As

Publication number Publication date
KR20130064024A (ko) 2013-06-17
TWI478213B (zh) 2015-03-21
US20130149646A1 (en) 2013-06-13
KR101456193B1 (ko) 2014-11-03
JP2013120833A (ja) 2013-06-17
US8791422B2 (en) 2014-07-29
TW201338015A (zh) 2013-09-16

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