TWI476816B - 自我對準間隔之多重圖案化方法 - Google Patents

自我對準間隔之多重圖案化方法 Download PDF

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Publication number
TWI476816B
TWI476816B TW099120757A TW99120757A TWI476816B TW I476816 B TWI476816 B TW I476816B TW 099120757 A TW099120757 A TW 099120757A TW 99120757 A TW99120757 A TW 99120757A TW I476816 B TWI476816 B TW I476816B
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Taiwan
Prior art keywords
layer
resist pattern
layers
patterned
pattern
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TW099120757A
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English (en)
Chinese (zh)
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TW201118925A (en
Inventor
裵榮喆
湯瑪斯 卡多拉西亞
劉易
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羅門哈斯電子材料有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H10P76/2041—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H10P76/204—
    • H10P76/4085—
    • H10P76/4088—

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW099120757A 2009-06-26 2010-06-25 自我對準間隔之多重圖案化方法 TWI476816B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26960009P 2009-06-26 2009-06-26
US28168109P 2009-11-19 2009-11-19
US28155309P 2009-11-19 2009-11-19

Publications (2)

Publication Number Publication Date
TW201118925A TW201118925A (en) 2011-06-01
TWI476816B true TWI476816B (zh) 2015-03-11

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Family Applications (1)

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TW099120757A TWI476816B (zh) 2009-06-26 2010-06-25 自我對準間隔之多重圖案化方法

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Country Link
US (1) US8431329B2 (enExample)
EP (1) EP2287667B1 (enExample)
JP (1) JP5698923B2 (enExample)
KR (2) KR101967191B1 (enExample)
CN (1) CN101963755B (enExample)
TW (1) TWI476816B (enExample)

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Also Published As

Publication number Publication date
EP2287667B1 (en) 2013-03-27
TW201118925A (en) 2011-06-01
KR20160123272A (ko) 2016-10-25
JP2011065136A (ja) 2011-03-31
KR20110002796A (ko) 2011-01-10
JP5698923B2 (ja) 2015-04-08
US20100330498A1 (en) 2010-12-30
KR101967191B1 (ko) 2019-04-09
CN101963755B (zh) 2012-12-19
CN101963755A (zh) 2011-02-02
EP2287667A1 (en) 2011-02-23
US8431329B2 (en) 2013-04-30
KR101967189B1 (ko) 2019-04-09

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