JP5698923B2 - 自己整合型スペーサー多重パターニング方法 - Google Patents

自己整合型スペーサー多重パターニング方法 Download PDF

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Publication number
JP5698923B2
JP5698923B2 JP2010145173A JP2010145173A JP5698923B2 JP 5698923 B2 JP5698923 B2 JP 5698923B2 JP 2010145173 A JP2010145173 A JP 2010145173A JP 2010145173 A JP2010145173 A JP 2010145173A JP 5698923 B2 JP5698923 B2 JP 5698923B2
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layer
resist pattern
spacer
layers
patterned
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Japanese (ja)
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JP2011065136A (ja
JP2011065136A5 (enExample
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ヨン・チョル・ペ
トーマス・カルドレーシャ
イ・リュウ
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010145173A 2009-06-26 2010-06-25 自己整合型スペーサー多重パターニング方法 Expired - Fee Related JP5698923B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US26960009P 2009-06-26 2009-06-26
US61/269,600 2009-06-26
US28155309P 2009-11-19 2009-11-19
US28168109P 2009-11-19 2009-11-19
US61/281,553 2009-11-19
US61/281,681 2009-11-19

Publications (3)

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JP2011065136A JP2011065136A (ja) 2011-03-31
JP2011065136A5 JP2011065136A5 (enExample) 2014-10-16
JP5698923B2 true JP5698923B2 (ja) 2015-04-08

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Country Link
US (1) US8431329B2 (enExample)
EP (1) EP2287667B1 (enExample)
JP (1) JP5698923B2 (enExample)
KR (2) KR101967191B1 (enExample)
CN (1) CN101963755B (enExample)
TW (1) TWI476816B (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009295745A (ja) * 2008-06-04 2009-12-17 Toshiba Corp 半導体装置の製造方法
EP2287669A1 (en) * 2009-06-26 2011-02-23 Rohm and Haas Electronic Materials, L.L.C. Methods of forming electronic devices
EP2287667B1 (en) 2009-06-26 2013-03-27 Rohm and Haas Electronic Materials, L.L.C. Self-aligned spacer multiple patterning methods
JP5184460B2 (ja) * 2009-07-24 2013-04-17 信越化学工業株式会社 パターン形成方法
TWI442453B (zh) * 2009-11-19 2014-06-21 羅門哈斯電子材料有限公司 形成電子裝置之方法
US8222140B2 (en) * 2009-12-23 2012-07-17 Intel Corporation Pitch division patterning techniques
WO2012102314A1 (en) * 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and semiconductor device
US8389383B1 (en) 2011-04-05 2013-03-05 Micron Technology, Inc. Patterned semiconductor bases, and patterning methods
EP2527379A1 (en) 2011-05-27 2012-11-28 Rohm and Haas Electronic Materials LLC Polymer and photoresist comprising the polymer
US20130065397A1 (en) * 2011-09-12 2013-03-14 Vigma Nanoelectronics Methods to increase pattern density and release overlay requirement by combining a mask design with special fabrication processes
CN102832168A (zh) * 2012-09-11 2012-12-19 上海华力微电子有限公司 一种沟槽优先铜互连制作方法
CN103676491B (zh) * 2012-09-20 2016-12-28 中国科学院微电子研究所 降低电子束光刻时光刻胶粗糙度的方法
CN103715080B (zh) * 2012-09-29 2016-08-10 中芯国际集成电路制造(上海)有限公司 自对准双重图形的形成方法
CN103779190B (zh) * 2012-10-17 2019-08-06 中国科学院微电子研究所 精细线条制备方法
CN102898313B (zh) * 2012-10-19 2014-06-11 南京信息工程大学 一种用于捕集酸性气体的氮撑化合物及其应用
CN102938391B (zh) * 2012-11-02 2015-01-21 上海华力微电子有限公司 一种铜互联线的制作工艺
US8889561B2 (en) 2012-12-10 2014-11-18 Globalfoundries Inc. Double sidewall image transfer process
CN104050311B (zh) * 2013-03-14 2018-05-25 台湾积体电路制造股份有限公司 用于自对准双图案化的任意金属间隔的系统和方法
CN106206288B (zh) * 2013-04-28 2019-01-22 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
US9318412B2 (en) 2013-07-26 2016-04-19 Nanya Technology Corporation Method for semiconductor self-aligned patterning
US20150031207A1 (en) * 2013-07-29 2015-01-29 Applied Materials, Inc. Forming multiple gate length transistor gates using sidewall spacers
US9012964B2 (en) 2013-08-09 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Modulating germanium percentage in MOS devices
US9761489B2 (en) 2013-08-20 2017-09-12 Applied Materials, Inc. Self-aligned interconnects formed using substractive techniques
JP6026375B2 (ja) * 2013-09-02 2016-11-16 株式会社東芝 半導体装置の製造方法
JP6126961B2 (ja) * 2013-09-30 2017-05-10 富士フイルム株式会社 パターン形成方法、パターンマスクの形成方法及び電子デバイスの製造方法
US9123772B2 (en) * 2013-10-02 2015-09-01 GlobalFoundries, Inc. FinFET fabrication method
US9448486B2 (en) * 2013-12-30 2016-09-20 Rohm And Haas Electronic Materials Llc Photoresist pattern trimming compositions and methods
US9305837B2 (en) 2014-04-10 2016-04-05 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and formation thereof
CN103985629B (zh) * 2014-05-21 2017-07-11 上海华力微电子有限公司 自对准双层图形半导体结构的制作方法
KR20150136387A (ko) 2014-05-27 2015-12-07 삼성전자주식회사 반도체 소자의 제조 방법
WO2015180966A2 (en) * 2014-05-28 2015-12-03 Asml Netherlands B.V. Methods for providing lithography features on a substrate by self-assembly of block copolymers
US9312191B2 (en) 2014-08-14 2016-04-12 Globalfoundries Inc. Block patterning process for post fin
TWI584061B (zh) * 2014-08-27 2017-05-21 羅門哈斯電子材料有限公司 多重圖案的形成方法
WO2016043203A1 (ja) * 2014-09-17 2016-03-24 富士フイルム株式会社 ポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置、有機エレクトロルミネッセンス表示装置およびタッチパネル
TWI603145B (zh) * 2014-12-31 2017-10-21 羅門哈斯電子材料有限公司 光微影方法
US9673059B2 (en) * 2015-02-02 2017-06-06 Tokyo Electron Limited Method for increasing pattern density in self-aligned patterning integration schemes
KR102370616B1 (ko) 2015-02-09 2022-03-04 삼성전자주식회사 미세 패턴 형성 방법
US9443731B1 (en) * 2015-02-20 2016-09-13 Tokyo Electron Limited Material processing to achieve sub-10nm patterning
US10216090B2 (en) * 2015-03-31 2019-02-26 Jsr Corporation Pattern-forming method and composition for resist pattern-refinement
US9685507B2 (en) * 2015-06-25 2017-06-20 International Business Machines Corporation FinFET devices
JP6565415B2 (ja) * 2015-07-22 2019-08-28 大日本印刷株式会社 インプリントモールド製造用の基板およびインプリントモールドの製造方法
US10061210B2 (en) * 2015-07-31 2018-08-28 Nanometrics Incorporated 3D target for monitoring multiple patterning process
CN106553993A (zh) * 2015-09-28 2017-04-05 中国科学院微电子研究所 与cmos工艺兼容的纳米结构制备方法
KR102403736B1 (ko) 2015-11-02 2022-05-30 삼성전자주식회사 반도체 소자 및 그 반도체 소자의 제조 방법
US10157742B2 (en) * 2015-12-31 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for mandrel and spacer patterning
US9852917B2 (en) * 2016-03-22 2017-12-26 International Business Machines Corporation Methods of fabricating semiconductor fins by double sidewall image transfer patterning through localized oxidation enhancement of sacrificial mandrel sidewalls
JP6389839B2 (ja) 2016-03-23 2018-09-12 株式会社先端ナノプロセス基盤開発センター 感光性組成物およびパターン形成方法
KR102230086B1 (ko) * 2016-11-16 2021-03-18 도쿄엘렉트론가부시키가이샤 분해능이하 기판 패터닝 방법
US9941164B1 (en) * 2016-12-05 2018-04-10 Samsung Electronics Co., Ltd. Self-aligned block patterning with density assist pattern
US10147606B2 (en) 2017-03-07 2018-12-04 Micron Technology, Inc. Methods of forming semiconductor device structures including linear structures substantially aligned with other structures
US20180323061A1 (en) * 2017-05-03 2018-11-08 Tokyo Electron Limited Self-Aligned Triple Patterning Process Utilizing Organic Spacers
CN109216165B (zh) * 2017-07-06 2020-11-03 中芯国际集成电路制造（天津）有限公司 多重图形及半导体器件的制造方法
JP2019078812A (ja) * 2017-10-20 2019-05-23 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 高精細パターンの製造方法およびそれを用いた表示素子の製造方法
US10304744B1 (en) * 2018-05-15 2019-05-28 International Business Machines Corporation Inverse tone direct print EUV lithography enabled by selective material deposition
US10763118B2 (en) * 2018-07-11 2020-09-01 International Business Machines Corporation Cyclic selective deposition for tight pitch patterning
US11069528B2 (en) 2018-10-31 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10910221B2 (en) * 2019-06-28 2021-02-02 Nanya Technology Corporation Semiconductor device structure with a fine pattern and method for forming the same
JP2021048329A (ja) 2019-09-19 2021-03-25 キオクシア株式会社 パターン形成方法及びテンプレートの製造方法
KR102316273B1 (ko) * 2019-10-15 2021-10-25 이화여자대학교 산학협력단 레이저 패터닝과 감광성 폴리머 절연막을 이용한 평면형 다중 전극 어레이 제조 방법
TWI717062B (zh) * 2019-10-16 2021-01-21 華邦電子股份有限公司 圖案化的方法
US11289493B2 (en) 2019-10-31 2022-03-29 Winbond Electronics Corp. Patterning method
KR102668700B1 (ko) * 2021-04-20 2024-05-23 엠에이치디 주식회사 반도체 장치의 미세 패턴 형성방법
CN120547952B (zh) * 2025-07-25 2025-10-14 合肥晶合集成电路股份有限公司 自隔离型图像传感结构、传感器及制备方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE68272T1 (de) 1984-06-01 1991-10-15 Rohm & Haas Lichtempfindliche beschichtungszusammensetzung, aus diesem hergestellte thermisch stabile beschichtungen und verfahren zur herstellung von thermisch stabilen polymerbildern.
CA1307695C (en) 1986-01-13 1992-09-22 Wayne Edmund Feely Photosensitive compounds and thermally stable and aqueous developablenegative images
DE68919600T2 (de) * 1988-08-26 1995-05-11 Nippon Oils & Fats Co Ltd Pigmentdispergiermittel.
US5128232A (en) 1989-05-22 1992-07-07 Shiply Company Inc. Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
JP3087726B2 (ja) * 1998-05-25 2000-09-11 日本電気株式会社 半導体装置の製造プロセスにおけるパターニング方法
JP4329216B2 (ja) * 2000-03-31 2009-09-09 Ｊｓｒ株式会社 レジストパターン縮小化材料及びそれを使用する微細レジストパターンの形成方法
US6534243B1 (en) * 2000-10-23 2003-03-18 Advanced Micro Devices, Inc. Chemical feature doubling process
US7211365B2 (en) 2002-03-04 2007-05-01 Shipley Company, L.L.C. Negative photoresists for short wavelength imaging
JP2004103926A (ja) * 2002-09-11 2004-04-02 Renesas Technology Corp レジストパターン形成方法とそれを用いた半導体装置の製造方法およびレジスト表層処理剤
US6916594B2 (en) * 2002-12-30 2005-07-12 Hynix Semiconductor Inc. Overcoating composition for photoresist and method for forming photoresist pattern using the same
US7232641B2 (en) 2003-10-08 2007-06-19 Shin-Etsu Chemical Co., Ltd. Polymerizable compound, polymer, positive-resist composition, and patterning process using the same
KR100575001B1 (ko) * 2004-12-10 2006-04-28 삼성전자주식회사 상호 결합 없는 이중 포토 리소그라피 방법
EP1720072B1 (en) 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
EP1918778B1 (en) 2006-10-30 2016-08-03 Rohm and Haas Electronic Materials LLC Compositions and processes for immersion lithography
KR20090095604A (ko) * 2006-12-06 2009-09-09 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 이중 패터닝 공정을 이용한 장치 제조 방법
KR100876783B1 (ko) * 2007-01-05 2009-01-09 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
US8088566B2 (en) * 2007-03-26 2012-01-03 Fujifilm Corporation Surface-treating agent for pattern formation and pattern-forming method using the surface-treating agent
JP2008268855A (ja) * 2007-03-26 2008-11-06 Fujifilm Corp パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法
JPWO2008143301A1 (ja) * 2007-05-23 2010-08-12 Jsr株式会社 パターン形成方法及びそれに用いる樹脂組成物
JP4840255B2 (ja) * 2007-05-29 2011-12-21 Ｊｓｒ株式会社 パターン形成方法及びそれに用いる樹脂組成物
US8642474B2 (en) * 2007-07-10 2014-02-04 Advanced Micro Devices, Inc. Spacer lithography
US8481417B2 (en) * 2007-08-03 2013-07-09 Micron Technology, Inc. Semiconductor structures including tight pitch contacts and methods to form same
JP4973876B2 (ja) * 2007-08-22 2012-07-11 信越化学工業株式会社 パターン形成方法及びこれに用いるパターン表面コート材
JP2009053547A (ja) * 2007-08-28 2009-03-12 Tokyo Ohka Kogyo Co Ltd パターン形成方法及び被覆膜形成用材料
JP5013119B2 (ja) * 2007-09-20 2012-08-29 信越化学工業株式会社 パターン形成方法並びにこれに用いるレジスト材料
TWI554841B (zh) 2007-11-05 2016-10-21 羅門哈斯電子材料有限公司 浸潤式微影組成物及製程
US8440569B2 (en) 2007-12-07 2013-05-14 Cadence Design Systems, Inc. Method of eliminating a lithography operation
US7838200B2 (en) * 2007-12-13 2010-11-23 International Business Machines Corporation Photoresist compositions and method for multiple exposures with multiple layer resist systems
US7927928B2 (en) 2008-01-16 2011-04-19 Cadence Design Systems, Inc. Spacer double patterning for lithography operations
US8030218B2 (en) * 2008-03-21 2011-10-04 Micron Technology, Inc. Method for selectively modifying spacing between pitch multiplied structures
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
KR101523951B1 (ko) * 2008-10-09 2015-06-02 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
EP2287669A1 (en) * 2009-06-26 2011-02-23 Rohm and Haas Electronic Materials, L.L.C. Methods of forming electronic devices
EP2287667B1 (en) 2009-06-26 2013-03-27 Rohm and Haas Electronic Materials, L.L.C. Self-aligned spacer multiple patterning methods
TWI442453B (zh) * 2009-11-19 2014-06-21 羅門哈斯電子材料有限公司 形成電子裝置之方法

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Publication number Publication date
JP2011065136A (ja) 2011-03-31
CN101963755B (zh) 2012-12-19
EP2287667A1 (en) 2011-02-23
US8431329B2 (en) 2013-04-30
EP2287667B1 (en) 2013-03-27
KR101967191B1 (ko) 2019-04-09
KR20160123272A (ko) 2016-10-25
CN101963755A (zh) 2011-02-02
KR101967189B1 (ko) 2019-04-09
US20100330498A1 (en) 2010-12-30
TWI476816B (zh) 2015-03-11
TW201118925A (en) 2011-06-01
KR20110002796A (ko) 2011-01-10

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