TWI469301B - 堆疊封裝間具有線接點互連之半導體多重封裝模組 - Google Patents

堆疊封裝間具有線接點互連之半導體多重封裝模組 Download PDF

Info

Publication number
TWI469301B
TWI469301B TW100113640A TW100113640A TWI469301B TW I469301 B TWI469301 B TW I469301B TW 100113640 A TW100113640 A TW 100113640A TW 100113640 A TW100113640 A TW 100113640A TW I469301 B TWI469301 B TW I469301B
Authority
TW
Taiwan
Prior art keywords
package
die
module
substrate
stacked
Prior art date
Application number
TW100113640A
Other languages
English (en)
Chinese (zh)
Other versions
TW201131731A (en
Inventor
馬可仕 康諾斯
Original Assignee
恰巴克有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/632,549 external-priority patent/US7064426B2/en
Priority claimed from US10/632,568 external-priority patent/US7205647B2/en
Priority claimed from US10/632,550 external-priority patent/US6972481B2/en
Priority claimed from US10/632,552 external-priority patent/US20040061213A1/en
Priority claimed from US10/632,553 external-priority patent/US7053476B2/en
Priority claimed from US10/632,551 external-priority patent/US6838761B2/en
Application filed by 恰巴克有限公司 filed Critical 恰巴克有限公司
Publication of TW201131731A publication Critical patent/TW201131731A/zh
Application granted granted Critical
Publication of TWI469301B publication Critical patent/TWI469301B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • H10W72/01515Forming coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/877Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/28Configurations of stacked chips the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/288Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW100113640A 2002-09-17 2003-09-17 堆疊封裝間具有線接點互連之半導體多重封裝模組 TWI469301B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US41159002P 2002-09-17 2002-09-17
US10/632,549 US7064426B2 (en) 2002-09-17 2003-08-02 Semiconductor multi-package module having wire bond interconnect between stacked packages
US10/632,568 US7205647B2 (en) 2002-09-17 2003-08-02 Semiconductor multi-package module having package stacked over ball grid array package and having wire bond interconnect between stacked packages
US10/632,550 US6972481B2 (en) 2002-09-17 2003-08-02 Semiconductor multi-package module including stacked-die package and having wire bond interconnect between stacked packages
US10/632,552 US20040061213A1 (en) 2002-09-17 2003-08-02 Semiconductor multi-package module having package stacked over die-up flip chip ball grid array package and having wire bond interconnect between stacked packages
US10/632,553 US7053476B2 (en) 2002-09-17 2003-08-02 Semiconductor multi-package module having package stacked over die-down flip chip ball grid array package and having wire bond interconnect between stacked packages
US10/632,551 US6838761B2 (en) 2002-09-17 2003-08-02 Semiconductor multi-package module having wire bond interconnect between stacked packages and having electrical shield

Publications (2)

Publication Number Publication Date
TW201131731A TW201131731A (en) 2011-09-16
TWI469301B true TWI469301B (zh) 2015-01-11

Family

ID=32034538

Family Applications (3)

Application Number Title Priority Date Filing Date
TW100113640A TWI469301B (zh) 2002-09-17 2003-09-17 堆疊封裝間具有線接點互連之半導體多重封裝模組
TW092125625A TWI329918B (en) 2002-09-17 2003-09-17 Semiconductor multi-package module having wire bond interconnection between stacked packages
TW098139252A TWI378548B (en) 2002-09-17 2003-09-17 Semiconductor multi-package module having wire bond interconnection between stacked packages

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW092125625A TWI329918B (en) 2002-09-17 2003-09-17 Semiconductor multi-package module having wire bond interconnection between stacked packages
TW098139252A TWI378548B (en) 2002-09-17 2003-09-17 Semiconductor multi-package module having wire bond interconnection between stacked packages

Country Status (6)

Country Link
EP (1) EP1547141A4 (https=)
JP (3) JP4800625B2 (https=)
KR (1) KR101166575B1 (https=)
AU (1) AU2003272405A1 (https=)
TW (3) TWI469301B (https=)
WO (1) WO2004027823A2 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3858854B2 (ja) * 2003-06-24 2006-12-20 富士通株式会社 積層型半導体装置
TWI442520B (zh) * 2005-03-31 2014-06-21 史達特司奇帕克有限公司 具有晶片尺寸型封裝及第二基底及在上側與下側包含暴露基底表面之半導體組件
US7364945B2 (en) 2005-03-31 2008-04-29 Stats Chippac Ltd. Method of mounting an integrated circuit package in an encapsulant cavity
US7394148B2 (en) 2005-06-20 2008-07-01 Stats Chippac Ltd. Module having stacked chip scale semiconductor packages
SG130055A1 (en) 2005-08-19 2007-03-20 Micron Technology Inc Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices
SG130066A1 (en) 2005-08-26 2007-03-20 Micron Technology Inc Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
JP5522561B2 (ja) * 2005-08-31 2014-06-18 マイクロン テクノロジー, インク. マイクロ電子デバイスパッケージ、積重ね型マイクロ電子デバイスパッケージ、およびマイクロ電子デバイスを製造する方法
US8198735B2 (en) 2006-12-31 2012-06-12 Stats Chippac Ltd. Integrated circuit package with molded cavity
US8124451B2 (en) 2007-09-21 2012-02-28 Stats Chippac Ltd. Integrated circuit packaging system with interposer
KR20110124063A (ko) 2010-05-10 2011-11-16 하나 마이크론(주) 적층형 반도체 패키지
KR20110124065A (ko) 2010-05-10 2011-11-16 하나 마이크론(주) 적층형 반도체 패키지
KR101688005B1 (ko) * 2010-05-10 2016-12-20 삼성전자주식회사 이중 랜드를 갖는 반도체패키지 및 관련된 장치
TWI406377B (zh) * 2010-12-27 2013-08-21 力成科技股份有限公司 方向指示標記立體化之球格陣列封裝構造及其製造方法
US9165906B2 (en) 2012-12-10 2015-10-20 Invensas Corporation High performance package on package
JP6128993B2 (ja) 2013-06-28 2017-05-17 キヤノン株式会社 積層型半導体装置、プリント回路板、電子機器及び積層型半導体装置の製造方法
KR101563910B1 (ko) * 2013-10-24 2015-10-28 앰코 테크놀로지 코리아 주식회사 반도체 패키지 및 이의 제조 방법
WO2015065639A1 (en) * 2013-10-30 2015-05-07 Honeywell International Inc. Force sensor with gap-controlled over-force protection
JP6357371B2 (ja) * 2014-07-09 2018-07-11 新光電気工業株式会社 リードフレーム、半導体装置及びリードフレームの製造方法
US9666730B2 (en) 2014-08-18 2017-05-30 Optiz, Inc. Wire bond sensor package
KR101961377B1 (ko) * 2015-07-31 2019-03-22 송영희 에지에 사이드 패드를 포함하는 lga 반도체 패키지
KR101799668B1 (ko) * 2016-04-07 2017-11-20 앰코 테크놀로지 코리아 주식회사 반도체 패키지 및 그 제조 방법
KR102652721B1 (ko) * 2016-12-30 2024-03-28 인텔 코포레이션 고주파수 통신을 위한 3d 적층된 초박형 패키지 모듈로 설계된 마이크로 전자 디바이스
EP3644351A1 (en) * 2018-10-26 2020-04-29 Nagravision SA Protection of wire-bond ball grid array packaged integrated circuit chips
KR102283390B1 (ko) 2019-10-07 2021-07-29 제엠제코(주) 멀티칩용 반도체 패키지 및 그 제조방법
KR102325217B1 (ko) 2020-05-18 2021-11-11 제엠제코(주) 멀티 다이 스택 반도체 패키지
CN114361063B (zh) * 2021-11-24 2024-12-13 苏州科阳半导体有限公司 基板键合方法及基板
US20240006278A1 (en) * 2022-07-01 2024-01-04 Mediatek Inc. Multi-die qfn hybrid package
US12469765B2 (en) 2022-09-22 2025-11-11 Apple Inc. Thermally enhanced chip-on-wafer or wafer-on-wafer bonding
CN115410929B (zh) * 2022-10-09 2024-09-24 江苏华创微系统有限公司 倒装芯片与底层芯片的堆叠结构的制备方法
CN120610067A (zh) * 2025-04-02 2025-09-09 杭州广立测试设备有限公司 晶圆的电容测试方法、装置和电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436203A (en) * 1994-07-05 1995-07-25 Motorola, Inc. Shielded liquid encapsulated semiconductor device and method for making the same
US5903049A (en) * 1997-10-29 1999-05-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor module comprising semiconductor packages
US6316838B1 (en) * 1999-10-29 2001-11-13 Fujitsu Limited Semiconductor device
US6333552B1 (en) * 1998-08-07 2001-12-25 Sharp Kabushiki Kaisha Millimeter wave semiconductor device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5222014A (en) * 1992-03-02 1993-06-22 Motorola, Inc. Three-dimensional multi-chip pad array carrier
JPH05283608A (ja) * 1992-03-31 1993-10-29 Toshiba Corp 樹脂封止型半導体装置および樹脂封止型半導体装置の製造方法
US5247423A (en) * 1992-05-26 1993-09-21 Motorola, Inc. Stacking three dimensional leadless multi-chip module and method for making the same
FR2694840B1 (fr) * 1992-08-13 1994-09-09 Commissariat Energie Atomique Module multi-puces à trois dimensions.
US5652185A (en) * 1995-04-07 1997-07-29 National Semiconductor Corporation Maximized substrate design for grid array based assemblies
US6075289A (en) * 1996-10-24 2000-06-13 Tessera, Inc. Thermally enhanced packaged semiconductor assemblies
JPH11243175A (ja) * 1998-02-25 1999-09-07 Rohm Co Ltd 複合半導体装置
JPH11265975A (ja) * 1998-03-17 1999-09-28 Mitsubishi Electric Corp 多層化集積回路装置
US6201302B1 (en) * 1998-12-31 2001-03-13 Sampo Semiconductor Corporation Semiconductor package having multi-dies
JP2000269411A (ja) * 1999-03-17 2000-09-29 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
JP4075204B2 (ja) * 1999-04-09 2008-04-16 松下電器産業株式会社 積層型半導体装置
JP4284744B2 (ja) * 1999-04-13 2009-06-24 ソニー株式会社 高周波集積回路装置
JP2000340736A (ja) * 1999-05-26 2000-12-08 Sony Corp 半導体装置及びその実装構造、並びにこれらの製造方法
JP2001223326A (ja) * 2000-02-09 2001-08-17 Hitachi Ltd 半導体装置
JP2001358280A (ja) * 2000-04-12 2001-12-26 Sony Corp リードフレームと、その製造方法と、半導体集積回路装置と、その製造方法
JP3916854B2 (ja) * 2000-06-28 2007-05-23 シャープ株式会社 配線基板、半導体装置およびパッケージスタック半導体装置
JP2002040095A (ja) * 2000-07-26 2002-02-06 Nec Corp 半導体装置及びその実装方法
JP4570809B2 (ja) 2000-09-04 2010-10-27 富士通セミコンダクター株式会社 積層型半導体装置及びその製造方法
JP2002158326A (ja) * 2000-11-08 2002-05-31 Apack Technologies Inc 半導体装置、及び製造方法
JP3798620B2 (ja) * 2000-12-04 2006-07-19 富士通株式会社 半導体装置の製造方法
US6340846B1 (en) * 2000-12-06 2002-01-22 Amkor Technology, Inc. Making semiconductor packages with stacked dies and reinforced wire bonds
JP2002184936A (ja) * 2000-12-11 2002-06-28 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2002217354A (ja) 2001-01-15 2002-08-02 Shinko Electric Ind Co Ltd 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436203A (en) * 1994-07-05 1995-07-25 Motorola, Inc. Shielded liquid encapsulated semiconductor device and method for making the same
US5903049A (en) * 1997-10-29 1999-05-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor module comprising semiconductor packages
US6333552B1 (en) * 1998-08-07 2001-12-25 Sharp Kabushiki Kaisha Millimeter wave semiconductor device
US6316838B1 (en) * 1999-10-29 2001-11-13 Fujitsu Limited Semiconductor device

Also Published As

Publication number Publication date
EP1547141A4 (en) 2010-02-24
TWI329918B (en) 2010-09-01
JP2005539403A (ja) 2005-12-22
JP2011181971A (ja) 2011-09-15
JP4800625B2 (ja) 2011-10-26
KR20050044925A (ko) 2005-05-13
JP5602685B2 (ja) 2014-10-08
TW201017853A (en) 2010-05-01
EP1547141A2 (en) 2005-06-29
JP5856103B2 (ja) 2016-02-09
AU2003272405A8 (en) 2004-04-08
JP2013211589A (ja) 2013-10-10
WO2004027823A2 (en) 2004-04-01
KR101166575B1 (ko) 2012-07-18
TW201131731A (en) 2011-09-16
WO2004027823A3 (en) 2004-05-21
TW200419765A (en) 2004-10-01
TWI378548B (en) 2012-12-01
AU2003272405A1 (en) 2004-04-08

Similar Documents

Publication Publication Date Title
TWI469301B (zh) 堆疊封裝間具有線接點互連之半導體多重封裝模組
US7169642B2 (en) Method of fabricating a semiconductor multi-package module having inverted land grid array (LGA) package stacked over ball grid array (BGA) package
CN101266966B (zh) 多芯片封装模块及其制造方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent