TWI469204B - A polishing method for a semiconductor wafer, and a resin composition and a protective sheet used therefor - Google Patents
A polishing method for a semiconductor wafer, and a resin composition and a protective sheet used therefor Download PDFInfo
- Publication number
- TWI469204B TWI469204B TW97123071A TW97123071A TWI469204B TW I469204 B TWI469204 B TW I469204B TW 97123071 A TW97123071 A TW 97123071A TW 97123071 A TW97123071 A TW 97123071A TW I469204 B TWI469204 B TW I469204B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor wafer
- acrylate
- meth
- polishing
- resin composition
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 67
- 239000011342 resin composition Substances 0.000 title claims description 60
- 238000005498 polishing Methods 0.000 title claims description 42
- 230000001681 protective effect Effects 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 24
- 235000012431 wafers Nutrition 0.000 claims description 127
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 101
- 239000010410 layer Substances 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 42
- 229920005989 resin Polymers 0.000 claims description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 238000007517 polishing process Methods 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 13
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000004925 Acrylic resin Substances 0.000 claims description 8
- 229920000178 Acrylic resin Polymers 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 230000002209 hydrophobic effect Effects 0.000 claims description 6
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 claims description 5
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 5
- 239000003999 initiator Substances 0.000 claims description 5
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
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- MAWOHFOSAIXURX-UHFFFAOYSA-N cyclopentylcyclopentane Chemical group C1CCCC1C1CCCC1 MAWOHFOSAIXURX-UHFFFAOYSA-N 0.000 claims description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims 1
- -1 neopentyl glycol modified trimethylolpropane Chemical class 0.000 description 41
- 239000002245 particle Substances 0.000 description 25
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- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 14
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 12
- 230000014759 maintenance of location Effects 0.000 description 12
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- 238000011156 evaluation Methods 0.000 description 10
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- 239000003505 polymerization initiator Substances 0.000 description 9
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- 238000001723 curing Methods 0.000 description 7
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- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 5
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- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 4
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- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 3
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- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
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- 238000012360 testing method Methods 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
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- XCOHPXRBLQWADM-UHFFFAOYSA-N 2,2-dicyclopentyloxyethyl 2-methylprop-2-enoate Chemical compound C1CCCC1OC(COC(=O)C(=C)C)OC1CCCC1 XCOHPXRBLQWADM-UHFFFAOYSA-N 0.000 description 2
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- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
Applications Claiming Priority (2)
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JP2007164951 | 2007-06-22 | ||
JP2007164934 | 2007-06-22 |
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TWI469204B true TWI469204B (zh) | 2015-01-11 |
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TW97123071A TWI469204B (zh) | 2007-06-22 | 2008-06-20 | A polishing method for a semiconductor wafer, and a resin composition and a protective sheet used therefor |
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JP (1) | JP5517615B2 (ja) |
KR (1) | KR20100032361A (ja) |
CN (1) | CN101681823B (ja) |
TW (1) | TWI469204B (ja) |
WO (1) | WO2009001732A1 (ja) |
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JP2010267653A (ja) * | 2009-05-12 | 2010-11-25 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP5356914B2 (ja) * | 2009-05-28 | 2013-12-04 | 株式会社ディスコ | ウエーハの加工方法 |
JP2011046153A (ja) * | 2009-08-28 | 2011-03-10 | Disco Abrasive Syst Ltd | 加工方法 |
KR100994633B1 (ko) * | 2010-04-08 | 2010-11-15 | 동우 화인켐 주식회사 | 흑색 감광성 수지 조성물, 이를 이용하여 제조된 블랙 매트릭스 및 상기 블랙 매트릭스를 구비하는 컬러 필터 |
JP2013067673A (ja) * | 2011-09-20 | 2013-04-18 | Hitachi Chemical Co Ltd | 樹脂ペースト組成物及び半導体装置 |
JP2013084770A (ja) * | 2011-10-11 | 2013-05-09 | Disco Abrasive Syst Ltd | ウェーハの研削方法 |
CN103065957B (zh) * | 2012-12-27 | 2016-04-20 | 日月光半导体制造股份有限公司 | 半导体基板切割的装置及半导体晶圆切割的制造方法 |
WO2015087192A1 (en) * | 2013-12-12 | 2015-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and peeling apparatus |
JP2015233077A (ja) * | 2014-06-10 | 2015-12-24 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016001677A (ja) * | 2014-06-12 | 2016-01-07 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016115800A (ja) * | 2014-12-15 | 2016-06-23 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016174102A (ja) | 2015-03-17 | 2016-09-29 | 株式会社東芝 | 半導体製造方法および積層体 |
CN106088146B (zh) * | 2016-07-22 | 2018-12-18 | 中国建筑第八工程局有限公司 | 一种临时地连墙拆除施工方法 |
CN110199379B (zh) * | 2017-01-23 | 2023-07-21 | 东京毅力科创株式会社 | 半导体基板的处理方法和半导体基板的处理装置 |
JP6963409B2 (ja) * | 2017-05-09 | 2021-11-10 | 株式会社ディスコ | ウェーハの加工方法 |
CN110634828B (zh) * | 2018-06-21 | 2021-11-16 | 矽创电子股份有限公司 | 凸块结构 |
Citations (4)
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US20020127821A1 (en) * | 2000-12-28 | 2002-09-12 | Kazuyuki Ohya | Process for the production of thinned wafer |
US20020160597A1 (en) * | 2001-04-30 | 2002-10-31 | Wen-Kun Yang | Wafer level package and the process of the same |
JP2003201451A (ja) * | 2002-01-09 | 2003-07-18 | Sumitomo Bakelite Co Ltd | 半導体加工用粘着シート |
JP2007100064A (ja) * | 2005-09-07 | 2007-04-19 | Furukawa Electric Co Ltd:The | ダイシング用粘着テープ |
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JPH05315304A (ja) * | 1992-05-12 | 1993-11-26 | Sony Corp | ウエハの裏面研削方法 |
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- 2008-06-18 WO PCT/JP2008/061163 patent/WO2009001732A1/ja active Application Filing
- 2008-06-18 KR KR1020097024208A patent/KR20100032361A/ko active Search and Examination
- 2008-06-20 TW TW97123071A patent/TWI469204B/zh active
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CN101681823B (zh) | 2012-05-23 |
CN101681823A (zh) | 2010-03-24 |
TW200917353A (en) | 2009-04-16 |
WO2009001732A1 (ja) | 2008-12-31 |
JP5517615B2 (ja) | 2014-06-11 |
KR20100032361A (ko) | 2010-03-25 |
JPWO2009001732A1 (ja) | 2010-08-26 |
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