TW200917353A - Method for grinding semiconductor wafer, and resin composition and protective sheet used for the method - Google Patents

Method for grinding semiconductor wafer, and resin composition and protective sheet used for the method Download PDF

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TW200917353A
TW200917353A TW097123071A TW97123071A TW200917353A TW 200917353 A TW200917353 A TW 200917353A TW 097123071 A TW097123071 A TW 097123071A TW 97123071 A TW97123071 A TW 97123071A TW 200917353 A TW200917353 A TW 200917353A
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semiconductor wafer
acrylate
meth
resin composition
honing
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TW097123071A
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Chinese (zh)
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TWI469204B (en
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Masanobu Kutsumi
Tomoyuki Kanai
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Denki Kagaku Kogyo Kk
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

Disclosed is a method for grinding the backside of a semiconductor wafer which has large recesses and projections of not less than 30 [mu]m in the circuit surface. Specifically disclosed is a method for grinding a semiconductor wafer, which is characterized in that a protective sheet or a fixing jig is attached to the circuit surface side of a semiconductor wafer through a resin layer that is removable from the semiconductor wafer, and then the backside of the semiconductor wafer is ground. Preferably, a groove having a depth shallower than the wafer thickness is formed in the circuit surface side of the semiconductor wafer and a resin composition for forming the resin layer is applied onto the entire circuit surface, and then the backside of the wafer is ground, thereby dividing the wafer into separate chips.; More preferably, after grinding the backside of the semiconductor wafer, the resin layer is heated and removed from the wafer.

Description

200917353 九、發明說明 【發明所屬之技術領域】 本發明係關於一種半導體晶圓硏磨方法與使用其而適 宜的樹脂組成物及保護薄片或固定用治具。 【先前技術】 藉由 1C卡、行動電話、及 PDA(Personal Digital Assistants)等之電子機器的薄型化等，俾於此等電子機器 的製造中之硏磨技術的重要性被廣泛認知。硏磨步驟中係 尋求一種可確實地固定被加工物。固定被加工物之方法之 一已知有使用黏著薄片之方法（參照專利文獻1)。 但，若硏磨晶圓至很薄，晶圓之強度會降低，故若於 晶圓內稍具有缺陷，則產生龜裂，降低良率。爲抑制此等 之破損，故於半導體晶圓的電路側面形成特定深度的溝後 ，從背面側進行硏磨，分割成晶片狀之方法已被提示（參 照專利文獻2)。 製造電子零件時，在其中途步驟中，於矽或鎵-砷等 之半導體晶圓上形成電路圖型而成之電子零件集合體、或 於平板狀之絕緣基板等形成電路圖型而成之電子零件集合 體的情形很多。於半導體晶圓上形成電路圖型而成之電子 零件集合體中係於砂晶圖上附3 0 μ m左右的電路的晶圓或 晶圓尺寸CSP(Chip Size Package)等爲代表且具有30〜500μιη 的凸塊者很多。 在使用習知黏著薄片之硏磨中，若使用具有30μιη以 上之凹凸的電子零件集合體，於凹凸之追蹤性不足，於電 -4 - 200917353 子零件集合體施加應力’故有時硏磨部產生凹陷或龜裂。 對於具有50μπι以上之凹凸的電子零件集合體，係考 慮於凹凸之追蹤性而使用比較柔軟的基材薄膜之情形很多 (參照專利文獻3 )’進行硏磨’分割成各晶片時，係成爲 所分割之晶片移動、晶片缺角或拾取不良的原因。 爲解決前述問題，對於晶圓、光學零件之電路面凹凸 之追蹤性爲充分存在的材料，且作爲硏磨時之支撐體而形 成具有非常剛性之組成物，含有具特定之（甲基）丙烯酸單 體的樹脂之樹脂組成物已被提出（專利文獻4、5 )。在專利 文獻4、5中係記載著上述樹脂組成物係於背面硏磨時之表 面保護上很有效，但有關在氧環境下進行硬化係未記載。 專利文獻1 :特開昭6卜0 1 0 2 4 2號公報 專利文獻2 :特開平〇 5 -3 3 5 4 1 1號公報 專利文獻3 :特許第3 7 7 3 3 5 8號公報 專利文獻4:國際公開W02007/004620手冊 專利文獻5 :國際公開W02006/100788手冊、 【發明內容】 發明欲解決之課題 本發明之目的在於提供一種硏磨加工時之凹凸追蹤性 及分割成各晶片時之晶片保持性優，不產生晶片缺角或拾 取不良’而與半導體晶圓之黏著性，剝離性優之構件、加 工方法；尤其，目的在於提供一種半導體晶圓的新硏磨方 法，其係在習知技術中無法對應，且於電路面具有3 Ομιη 200917353 以上大的凹凸之半導體晶圓背面進行硏磨而薄壁化。 用以解決課題之手段 (1) 一種半導體晶圓之硏磨方法，其特徵在於：半導體晶 圓之電路面（表面）側介由可從前述半導體晶圓剝離之樹脂 層而設有保護薄片或固定用治具，硏磨前述半導體晶圓之 背面。 (2) 如上述（1)項之半導體晶圓之硏磨方法，其中於半導體 晶圓之電路面側形成較晶圓厚度更淺之深度的溝，使形成 樹脂層之樹脂組成物全面地塗佈，硏磨前述半導體晶圓之 背面而分割成各個晶片。 (3) 如上述（1)或（2)項之半導體晶圓之硏磨方法，其中於硏 磨半導體晶圓之背面之後，加熱樹脂層而除去。 (4) 如上述（3 )項之半導體晶圓之硏磨方法，其中至少使樹 脂層加熱至40〜15 0°C，以除去樹脂層。 (5) 如上述（1)〜（3)項中任一項的半導體晶圓之硏磨方法， 其中至少使樹脂層接觸於30〜10(TC之溫水，以除去樹脂層 〇 (6) 如上述（1)〜（5)項中任一項的半導體晶圓之硏磨方法， 其中保護薄片或固定用治具爲光透過性，樹脂層爲由丙稀 酸系樹脂組成物所構成° (7) 如上述（1)〜（6)項中任一項的半導體晶圓之硏磨方法， 其中半導體晶圓爲於電路面具有30 μιη以上1〇〇〇 μπι以下之 凹凸。 * 6 - 200917353 (8) 如上述（6)或（7)項之半導體晶圓之硏磨方法，其中固定 用治具爲透過波長365nm之光20 %以上者。 (9) 一種樹脂組成物，其係使用於如上述（1)〜（7)項中任一 項的半導體晶圓之硏磨方法。 (10) 如上述（9)項之樹脂組成物，其中含有（A)多官能（甲基 )丙烯酸酯、（B)單官能（甲基）丙烯酸酯及（C)聚合起始劑， 相對於（A)與（B)之合計量100質量份，含有（B)50〜97質量 份，（C)0.1〜20質量份。 (11) 如上述（10)項之樹脂組成物，其中前述（A)及（B)皆爲 疏水性。 (12) 如上述（10)或（11)項之樹脂組成物，其中前述（C)爲光 聚合起始劑。 (13) —種保護薄片，其係使用於如上述（1)〜（7)項中任一項 的半導體晶圓之硏磨方法。 (14) 如上述（13)項之保護薄片，其中含有至少一層以上由 乙烯-乙酸乙烯酯所構成之層。 (15) 如上述（13)或（14)項之保護薄片，其中於表面具有黏 著層。 (16) 如上述（15)項之保護薄片，其中黏著層爲由丙烯酸系 樹脂組成物所構成。 發明之效果 本發明之半導體晶圓硏磨方法與使用其的樹脂組成物 係發揮如下效果：於電路面具有30〜ΙΟΟΟμπι進而具有 200917353 30〜500μιη，尤其具有30〜50μηι之凹凸（凸塊）之半導體晶圓 的硏磨加工時之凹凸追蹤性及分割成各晶片時之晶片保持 性優，不產生晶片缺角或拾取不良，而作業環境上亦優。 用以實施發明之最佳形態 (樹脂層） 本發明之樹脂層係以下詳述之樹脂組成物進行硬化所 得到者。本發明所使用之樹脂組成物係進行硬化所得到之 樹脂層藉加熱，或藉由有機溶劑或與水之接觸俾容易地從 半導體晶圓剝離之性質者，進一步此時宜與保護薄片不剝 離者。其中，藉加熱進行剝離者或與水之接觸進行剝離者 ，皆相較於使用有機溶劑之剝離方法，不須更大的設備， 作業環境上亦優，故較宜選擇。 就前述樹脂組成物而言可舉例如丙烯酸系樹脂組成物 ，尤其，宜爲使（A)多官能（甲基）丙烯酸酯與（B)單官能（甲 基）丙烯酸酯適當調配之丙烯酸系樹脂組成物。又，總稱 丙烯酸酯及甲基丙烯酸酯爲（甲基）丙烯酸酯。 (A) 多官能（甲基）丙烯酸酯係可使用於寡聚物/聚合物 末端或側鏈具有2個以上（甲基）丙烯醯基化之多官能（甲基） 丙烯酸酯的寡聚物/聚合物或2個以上之（甲基）丙烯醯基的 單體。 (B) 多官能（甲基）丙烯酸酯的寡聚物/聚合物係可$例j 如1,2-聚丁二烯末端胺基甲酸酯（甲基）丙烯酸酯（例如日本 曹達公司製TE-2 000、TEA- 1 000)、前述氫添加物（例如日 200917353 本曹達公司製ΤΕΑΙ- 1 000)、1，4-聚丁二烯末端胺基甲酸酯 (甲基）丙烯酸酯（例如，大阪有機化學公司製BAC-45)、聚 異戊二烯末端（甲基）丙烯酸酯、聚酯系胺基甲酸酯（甲基） 丙烯酸酯、聚醚系胺基甲酸酯（甲基）丙烯酸酯、聚酯（甲 基）丙烯酸酯、雙酚A型環氧（甲基）丙烯酸酯（例如大阪有 機化學公司製Biscote #540、昭和高分子公司製Biscote VR-77)、胺基甲酸酯（甲基）丙烯酸酯（例如日本合成化學 公司製UV-3 000B)等。 2官能（甲基）丙烯酸酯單體可舉例如1,3 -丁二醇二（甲 基）丙烯酸酯、1，4-丁二醇二（甲基）丙烯酸酯、；!，6_己二醇 二（甲基）丙烯酸酯、1,9-壬二醇二（甲基）丙烯酸酯、新戊 二醇二（甲基）丙烯酸酯、二環戊基二（甲基）丙烯酸酯、2· 乙基-2-丁基·丙二醇（甲基）丙烯酸酯、新戊二醇改性三經 甲基丙烷二（甲基）丙烯酸酯、硬脂酸改性季戊四醇二丙稀 酸酯、聚丙二醇二（甲基）丙烯酸酯、2,2-雙（4-(甲基）丙稀 醯基二乙氧基苯基）丙烷、2，2-雙（4-(甲基）丙烯醯基丙氧 基苯基）丙烷、2,2-雙（4-(甲基）丙烯醯基四乙氧基苯基）丙 烷、二環癸基二（甲基）丙烯酸酯等。 3官能（甲基）丙烯酸酯單體可舉例如三羥甲基丙院三（ 甲基）丙烯酸酯、三[(甲基）丙烯醯氧基乙基]三聚異氰酸酯 等。 4目Η旨以上之（甲基）丙儲酸酯單體可舉例如二經甲基 丙烷四（甲基）丙烯酸酯、季戊四醇二丙烯酸醋四（甲基）丙 稀酸S曰、季戊四醇乙氧基四（甲基）丙稀酸酯、二季戊四醇 200917353 五（甲基）丙烯酸酯、二季戊四醇六（甲基）丙烯酸酯等。 (A)多官能（甲基）丙烯酸酯係更宜爲疏水性者。疏水 性之多官能（甲基）丙烯酸酯謂不具有羥基之（甲基）丙烯酸 酯。如此地，水溶性之情形係硏磨加工時樹脂組成物之硬 化體進行膨潤俾引起位移，恐加工精度差。即使爲親水性 ，若非其樹脂組成物之硬化體受水而很大膨潤或一部分溶 解，即使使用亦無妨。 (A) 多官能（甲基）丙烯酸酯之添加量係（A)及後述之（B) 單官能（甲基）丙烯酸酯的合計量100質量份中，宜爲3〜50 質量份，更宜爲10〜30質量份。若爲3質量份以上，加熱樹 脂組成物之硬化體時可充分助長從被黏物剝離該硬化體之 性質（以下，僅稱爲「剝離性」），且可確保呈膜狀剝離樹 脂組成物之硬化體。又，若爲5 0質量份以下，亦無初期之 黏著性降低之虞。 (B) 單官能（甲基）丙烯酸酯的單體可舉例如甲基（甲基） 丙烯酸酯、乙基（甲基）丙烯酸酯、丙基（甲基）丙烯酸酯、 丁基（甲基）丙烯酸酯、2-乙基己基（甲基）丙烯酸酯、異辛 基（甲基）丙烯酸酯、異癸基（甲基）丙烯酸酯、月桂基（甲基 )丙烯酸醋、硬脂基（甲基）丙嫌酸醋、苯基（甲基）丙稀酸醋 、環己基（甲基）丙烯酸酯、二環戊基（甲基）丙烯酸酯、二 環戊烯基（甲基）丙烯酸酯、二環戊烯氧乙基（甲基）丙烯酸 酯、異冰片基（甲基）丙烯酸酯、甲氧基化環癸三烯（甲基） 丙烯酸酯、2-羥基乙基（甲基）丙烯酸酯、2-羥基丙基（甲基 )丙烯酸酯、3-羥丙基（甲基）丙烯酸酯、4-羥丁基（甲基）丙 -10- 200917353 烯酸酯、四氫糠基（甲基）丙烯酸酯、2 -羥基-3-苯氧基丙基 (甲基）丙烯酸酯、縮水甘油基（甲基）丙烯酸酯、己內酯改 性四氫糠基（甲基）丙烯酸酯、3 -氯-2-羥基丙基（甲基）丙烯 酸酯、N，N-二甲基胺基乙基（甲基）丙烯酸酯、Ν,Ν·二乙基 胺基乙基（甲基）丙烯酸酯、第三丁基胺基乙基（甲基）丙烯 酸酯、乙氧基羰基甲基（甲基）丙烯酸酯、酚環氧乙烷改性 丙烯酸酯、酚（環氧乙烷2莫耳改性）丙烯酸酯、酚（環氧乙 烷4莫耳改性）丙烯酸酯、對枯基酚環氧乙烷改性丙烯酸酯 、壬基酚環氧乙烷改性丙烯酸酯、壬基酚（環氧乙烷4莫耳 改性）丙烯酸酯、壬基酚（環氧乙烷8莫耳改性）丙烯酸酯、 壬基酚（環氧丙烷2.5莫耳改性）丙烯酸酯、2 -乙基己基卡必 醇丙烯酸酯、環氧乙烷改性酞酸（甲基）丙烯酸酯、環氧乙 烷改性琥珀酸（甲基）丙烯酸酯、三氟乙基（甲基）丙烯酸酯 、丙烯酸、甲基丙烯酸、馬來酸、富馬酸、ω -羧基-聚己 內酯單（甲基）丙烯酸酯、酞酸單羥乙基（甲基）丙烯酸酯、（ 甲基）丙烯酸酯偶體、Θ -(甲基）丙烯醯氧乙基氫琥珀酸酯 、正（甲基）丙烯醯氧烷基六氫酞醯亞胺、2-(1，2-環六羧基 醯亞胺）乙基（甲基）丙烯酸酯等。 (Β)單官能（甲基）丙烯酸酯係與（Α)同樣地，係更宜爲 疏水性者。水溶性之情形係硏磨加工時樹脂組成物之硬化 體進行膨潤俾引起位移，恐加工精度差。此處疏水性謂不 具有羥基之（甲基）丙烯酸酯。又，即使爲親水性，若非其 樹脂組成物之硬化體受水而膨潤或一部分溶解，即使使用 亦無妨。 -11 - 200917353 (B)單官能（甲基）丙烯酸酯之添加量係（A)及（B)的合計 量100質量份中，宜爲50〜97質量份，更宜爲70〜90質量份 。若爲50質量份以上，亦無初期之黏著性降低之虞，若爲 97質量份以下，剝離性良好。 又，於前述（A)及（B )之調配組成物中，倂用（甲基）丙 烯醯氧乙基酸磷酸酯、二丁基2-(甲基）丙烯醯氧乙基酸磷 酸酯、二辛基2-(甲基）丙烯醯氧乙基磷酸酯、二苯基2-(甲 基）丙烯醯氧乙基磷酸酯、（甲基）丙烯醯氧乙基聚乙二醇 酸磷酸酯等之具有乙烯基或（甲基）丙烯酸基之磷酸酯，俾 可進一步提昇於金屬面之密著性。 在本發明所使用之（C)聚合起始劑係宜調配用以藉可 見光線或紫外線之活性光線增感而促進樹脂組成物之光硬 化者，可使用公知之各種光聚合起始劑。具體上係可舉例 如二苯甲酮及其衍生物；苯甲基及其衍生物；蒽醌 (anthraquinone)及其衍生物；苯偶因、苯偶因甲基醚、苯 偶因乙基醚、苯偶因丙基醚、苯偶因異丁基醚、苯甲基二 甲基縮酮等之苯偶因衍生物；二乙氧基乙醯苯、4-第三丁 基三氯乙醯苯等之乙醯苯衍生物；2-二甲基胺基乙基苯甲 酸酯：對二甲基胺基乙基苯甲酸酯；二苯基二硫酸醚；硫 雜蒽酮及其衍生物；樟腦醌、7,7-二甲基-2,3-二氧代雙環 [2.2.1] 庚烷-i_羧酸、7,7-二甲基·2,3-二氧代雙環[2.2.1]庚 烷-1-羧基-2 -溴乙基酯、7,7-二甲基-2,3 -二氧代雙環 [2.2.1] 庚烷-1-羧基-2-甲基酯、7,7-二甲基-2,3-二氧代雙 環[2·2·1]庚烷-：[_羧酸氯化物等之樟腦醌衍生物；2_甲基_ -12- 200917353 1-[4-(甲基硫）苯基]-2-嗎啉基丙烷-1-酮、2-苯甲基_2-二甲 基胺基-1-(4 -嗎啉基苯基）-丁酮-1等之α -胺基烷基酚衍生 物；苯甲醯基二苯基磷氧化物、2,4,6-三甲基苯甲醯基二 苯基磷氧化物、苯甲醯基二乙氧基磷氧化物、2,4,6 -二甲 基苯甲醯基二甲氧基苯基磷氧化物、2,4,6 -三甲基苯甲醯 基二乙氧基苯基磷氧化物等之醯基磷氧化物衍生物等。光 聚合起始劑係可組合1種或2種以上而使用。 (C)聚合起始劑之添加量係相對於（Α)與（Β)之合計10 質量份宜爲0.1〜20質量份。更宜爲0.5〜10質量份。若爲0.1 質量份以上，可確實地得到硬化促進的效果，在20質量份 以下可得到充分的硬化速度。更佳之形態而言，添加 (C)0_5質量份以上，不依存於光照射量，可硬化，進而樹 脂組成物之硬化體的交聯度變高，就硏磨加工時不產生位 移等之點或剝離性提高之點而言更佳。 又’於前述（A)、（B)及（C)之調配組成物中，若含有 具苯環骨架之化合物，與半導體保護薄片之親和性會提高 ’使該組成物的硬化體殘留於基材側，只剝離構件，可回 收’故可得到作業性優之效果。 在本發明中’亦可於樹脂組成物中含有極性有機溶劑 。藉由含有極性有機溶劑，俾樹脂層與溫水接觸而容易地 膨脹，可降低黏著強度。 關於極性有機溶劑係其沸點宜爲3 (TC以上200 t以下 。選擇沸點爲前述範圍內之極性有機溶劑時，係樹脂層與 溫水接觸而黏著強度降低之現像可更進一步地確實地顯現 -13- 200917353 ，故佳。又，如此之極性有機溶劑可舉例如醇、酮、酯等 ，但若依據發明人之硏究結果，其中宜選擇醇。 醇係可舉例如甲醇、乙醇、正丙醇、異丙醇、正丁醇 、異丁醇、第二丁醇、第三丁醇、正戊基醇、異戊醇、2-乙基丁基醇等。進一步，前述醇中，宜沸點爲1 20 °c以下 之甲醇、乙醇、正丙醇、異丙醇、正丁醇、異丁醇、第二 丁醇、第三丁醇，其中，更宜爲之甲醇、乙醇、異丙醇、 正丁醇。 極性有機溶劑之添加量係相對於（A)與（B)之合計量 1〇〇質量份，宜爲0.5〜10質量份。若爲0.5質量份以上，可 確保剝離性，若爲1 0質量份以下，亦無初期的黏著性降低 之虞，樹脂層呈薄膜狀剝離。 在本發明中係亦可含有不溶解於（A)、（B)及（C)之粒 狀物質。藉此，樹脂層可保持一定的厚度，故硏磨厚精度 會提高。 不溶解於（A)、（B)及（C)之粒狀物質就材質而言，一 般所使用之有機粒子、無機粒子之任一者均無妨。具體上 有機粒子可舉例如聚乙烯粒子、聚丙烯粒子、交聯聚甲基 丙烯酸甲酯粒子、交聯聚苯乙烯粒子等，無機粒子可舉例 如玻璃、二氧化矽、氧化鋁、鈦等之陶瓷粒子。 不溶解於（A)、（B)及（C)之粒狀物質係從硏磨厚度精 度的提昇、亦即’樹脂層之膜厚的控制觀點，宜爲球狀， 粒徑爲一定。 具體上’有機粒子可舉例如藉由甲基丙烯酸甲酯單體 -14- 200917353 、苯乙烯單體與交聯性單體之公知的乳化聚合法，形成單 分散粒子所得到之交聯聚甲基丙烯酸甲酯粒子、交聯苯乙 烯粒子等。 無機粒子可舉例如球狀二氧化矽。 此等之粒子係粒子的變形少，粒徑的參差不齊所產生 之樹脂層的膜厚變均一，故佳，其中，進一步從粒子之沉 澱等的貯存安定性或樹脂組成物之反應性觀點，更宜爲交 聯聚甲基丙烯酸甲酯粒子、交聯聚苯乙烯粒子。 樹脂組成物之硬化物的膜厚係依據構件之種類、形狀 、大小等，熟悉此技藝者可適當選擇，但不溶解於（A)、 (B)及（C)之粒狀物質之粒徑係就粒子之平均粒徑宜爲 1〜300μηι，尤宜爲10〜200μιη。若爲Ιμιη以上，可確保剝離 性，若爲3 0 0 μιη以下，加工精度不降低。又，有關前述粒 徑的分布宜儘可能地窄。平均粒徑係依雷射繞射式粒度分 布測定裝置（島津製作所公司製「SALD-2200」測定。 不溶解於（A)、（Β)及（C)之粒狀物質之添加量係相對 於（Α)及（Β)之合計量100質量份宜爲0.1〜20質量份，尤宜 爲0.1〜10質量份。若爲0.1質量份以上樹脂層之膜厚約爲 一定，若爲20質量份以下，亦恐初期之黏著性降低。 本發明之樹脂組成物係無損本發明之目的的範圍，亦 可使用一般所使用之丙烯酸橡膠、胺基甲酸酯橡膠、丙烯 腈-丁二烯-苯乙烯橡膠等之各種彈性體、無機塡充劑、溶 劑、增量材、補強材、可塑劑、增黏劑、染料、顏料、阻 燃劑、矽烷偶合劑、界面活性劑等之添加量。 -15- 200917353 本發明之樹脂組成物係爲提高其貯存安定性可使用少 量之聚合抑制劑。聚合抑制劑係可舉例如甲基氫醌、氫醌 、2，2-亞甲基-雙（4-甲基-6-第三丁基酚）、兒茶酚、氫醌單 甲基醚、單第三丁基氫醌、2,5 -二第三丁基氫醌、對苯醌 、2,5-二苯基-對苯醌、2,5 -二第三丁基-對苯醌、苦味酸 (picric acid)、檸檬酸、吩噻嗪（phenothiazine)、第三 丁基兒 茶酚、2 -丁基-4-羥基茴香醚、2,6 -第三丁基-對甲酚等。 此等之聚合抑制劑的使用量係相對於（A)及（B)之單體 合計量100質量份，宜爲0.001〜3質量份，更宜爲〇.〇1〜2質 量份。就0.001質量份以上可確保貯存安定性，宜爲3質量 份以下可得到良好的黏著性，亦無變成未硬化。 由前述樹脂組成物所得到之樹脂層係如前述般，宜藉 加熱進行剝離者或與水之接觸進行剝離者。加熱之溫度爲 40〜150°C ’宜爲50〜100°C，更宜爲55〜80°C，與溫水接觸 時的溫水溫度宜爲30〜100°C，宜爲35〜80 T：，更宜爲40〜60 °C，不須有龐大的設備，而作業上處理很容易，故佳。 (保護薄片） 保護薄片係可使用由以往公知之合成樹脂所構成之薄 片，亦可使用乙烯-乙酸乙烯酯、聚乙烯、聚丙烯、聚丁 烯、聚丁二烯等之聚烯烴類之外，聚氯化乙烯、聚對苯二 甲酸乙二酯、聚萘二甲酸乙二酯、聚苯乙烯、聚碳酸酯、 聚醯亞胺等作爲單獨或2種以上的層合薄膜。保護薄片中 之基材的厚度宜爲50〜50 0μιη，更宜爲70〜25 0μιη。較 -16- 200917353 5 0 0 μιη厚時係藉因硏磨時所施加之荷重，有時晶圓偏移， 失去硏磨精度，不足50μηι時，係於基材薄膜成型時產生 針孔或魚眼，因其影響而硏磨精度變差。又，樹脂組成物j 含有丙烯酸系樹脂時等之光硬化性樹脂時，宜選擇保_ _ 片亦爲光透過性者。又，保護薄片係必須於後述之半導胃 晶圓的背面硏磨而滿足強度特性，故至少宜一層以上含有 乙烯-乙酸乙烯酯所構成之層。 於保護薄片係亦可使用設有由黏著劑所構成之黏著層 ，黏著劑係可使用一般感壓型黏著劑、紫外線硬化型黏著 劑、加熱硬化型黏著劑等。一般感壓型黏著劑可使用丙烯 系、橡膠系、聚矽氧系等之黏著劑。紫外線硬化型黏著劑 係於一般感壓型黏著劑調配硬化性化合物及紫外線硬化起 始劑者，藉紫外線之照射可調整其黏著力。又，加熱硬化 型黏著劑係於一般感壓型黏著劑調配硬化性化合物及加熱 硬化起始劑者，可藉加熱以調整其黏著力。其中宜丙烯酸 系樹脂組成物所構成之黏著劑。黏著層之厚度宜爲 3〜ΙΟΟμιη，更宜爲1 0〜5 0 μ m。較1 〇 〇 μπι厚時，因硏磨時所 施加之荷重，有時晶圓會偏位，硏磨精度變差，較3 μηι薄 時，因塗佈時所產生之糊刮具的影響等硏磨精度會降低。 (固定用治具） 固定用治具宜爲平滑之材料’亦可使用玻璃、不鏽鋼 、鋁、陶瓷、鐵等之金屬板狀體、丙烯酸、聚碳酸酯、 ABS、PET、尼龍、胺基甲酸酯、聚醯亞胺、聚烯烴、氯 -17- 200917353 化乙烯等之樹脂板狀體或厚的樹脂薄膜狀者等作爲單獨或 2種以上的層合體。 固定用治具係宜使3 6 5 n m之波長透過2 0 %以上者，更 宜爲5 0 %以上透過者。一般’對樹脂組成物照射3 6 5 ηιη波 長之光而硬化時，爲於特定時間內結束硬化，適當設定光 之照射量’以此時之照射光量作爲基準，若固定用治具透 過3 65nm波長20%以上者，亦未使樹脂組成物硬化耗費太 多時間，爲良好。 又’固定用治具之厚度並無特別限定，但宜爲 ΙΟΟμπι〜10mm，更宜選擇2〜5mm。 又，有關固定用治具等之光的透過量係使用TopC〇n 公司製「UVR - 2」，測定使波長3 65nm之光的入射量爲 100時之透過量。 (半導體晶圓之硏磨方法） 本發明之較佳實施態樣中係保護薄片或固定用治具係 預先於半導體晶圓的電路側面形成較其晶圓厚還淺之切割 深度的溝’其後’硏磨上述半導體晶圓的背面以使半導體 晶圓的厚度薄化’同時最後在分割成各晶片之半導體晶圓 的背面硏磨方法中，可使用來作爲電路面之凹凸追蹤性與 保護及半導體晶圓的固定手段。 本發明之較佳實施態樣係具體上可提示由以下之步驟 (1)〜（5)所構成的半導體晶圓的背面硏磨方法。 (1)沿著用以區隔半導體晶圓上的電路之直線而切割特定 -18- 200917353 深度的溝（參照圖1)。 (2) 以被覆前述半導體晶圓的電路面全體之方式，塗佈樹 脂組成物（參照圖2)。又’塗佈方法係可採用桿塗、噴槍 、旋塗等各式各樣的塗佈形式。 (3) 於由樹脂組成物所構成之層上貼合保護薄片或固定用 治具’照射可見光或紫外線，使光硬化性樹脂層硬化。 (3’）取代上述（2)及（3)而塗佈樹脂組成物後，照射可見光 或紫外線，使由樹脂組成物所構成之層硬化後，貼合保護 薄片或固定用治具（參照圖3)。 於上述（3)或（3，）中，亦可從保護薄片外側或固定用治 具外側施加重而得到均一的厚度精度。 (4) 硏磨半導體晶圓之背面至特定的厚度，分割成各個晶 片（參照圖4)。 (5) 於晶片之硏磨面貼合另一黏著膠帶，加熱至40〜150°C ’或與40〜l〇(TC之溫水接觸而從晶片剝離樹脂層或保護薄 片或固定用治具（參照圖5)。 其後，拾取晶片，安裝於特定的基體上。 【實施方式】 實施例 以下藉本發明之實施例更詳細地說明本發明，但不應 限定於此等而被解釋。 又，各別之實施例、比較例中之樹脂組成物的組成（ 質量份）、及評估結果等歸納表示於表1、表2中。（實施例 -19- 200917353BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer honing method and a resin composition and a protective sheet or a fixing jig suitable for use therewith. [Prior Art] The importance of the honing technique in the manufacture of such electronic devices is widely recognized by the thinning of electronic devices such as 1C cards, mobile phones, and PDAs (Personal Digital Assistants). In the honing step, a method of reliably fixing the workpiece is sought. One of the methods of fixing a workpiece is a method of using an adhesive sheet (refer to Patent Document 1). However, if the wafer is honed to a very thin thickness, the strength of the wafer is lowered. Therefore, if there is a slight defect in the wafer, cracks are generated and the yield is lowered. In order to suppress such damage, a method of forming a groove having a certain depth on the side surface of the semiconductor wafer and then honing it from the back side to divide into a wafer shape has been proposed (refer to Patent Document 2). In the case of manufacturing an electronic component, an electronic component assembly in which a circuit pattern is formed on a semiconductor wafer such as tantalum or gallium-arsenic, or an electronic component in which a circuit pattern is formed on a flat insulating substrate or the like in a middle step There are many situations in the assembly. The electronic component assembly in which the circuit pattern is formed on the semiconductor wafer is represented by a wafer or wafer size CSP (Chip Size Package) having a circuit of about 30 μm on the sand crystal image, and has 30~ There are many bumps of 500μιη. In the honing using the conventional adhesive sheet, if an electronic component assembly having irregularities of 30 μm or more is used, the tracking property of the unevenness is insufficient, and the stress is applied to the electric component - 2009-17353 sub-assembly assembly, so the honing portion may be used. Produces depressions or cracks. In the case of the electronic component assembly having the unevenness of 50 μm or more, a relatively soft base film is used in consideration of the tracking property of the unevenness (see Patent Document 3). The reason for the split wafer movement, wafer notch or poor pickup. In order to solve the above problems, the traceability of the surface roughness of the wafer and the optical component is a sufficient material, and as a support during honing, a very rigid composition containing a specific (meth)acrylic acid is formed. A resin composition of a monomer resin has been proposed (Patent Documents 4 and 5). In Patent Documents 4 and 5, it is described that the above resin composition is effective for surface protection during back honing, but it is not described in the case of curing in an oxygen atmosphere. Patent Document 1: Japanese Patent Publication No. Hei No. 6 0 0 0 4 No. 2 Patent Document 2: JP-A-5-3 3 5 4 1 1 Patent Document 3: Patent No. 3 7 7 3 3 5 8 Document 4: International Publication WO2007/004620 Manual Patent Document 5: International Publication WO2006/100788 Manual, SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION An object of the present invention is to provide an unevenness tracking property during honing processing and division into wafers. The invention has the advantages of excellent wafer retention, no wafer chipping or picking failure, and adhesion to a semiconductor wafer, and excellent exfoliation member and processing method; in particular, the object is to provide a new honing method for a semiconductor wafer, In the conventional art, it is impossible to cope with the back surface of the semiconductor wafer having a large unevenness of 3 Ομηη 200917353 or more on the circuit surface. Means for Solving the Problem (1) A method of honing a semiconductor wafer, characterized in that a circuit surface (surface) side of a semiconductor wafer is provided with a protective sheet via a resin layer which can be peeled off from the semiconductor wafer or Fixing the jig and honing the back side of the aforementioned semiconductor wafer. (2) The method of honing a semiconductor wafer according to the above item (1), wherein a groove having a shallower depth than a wafer is formed on a circuit surface side of the semiconductor wafer, and the resin composition forming the resin layer is entirely coated The cloth is honed to the back side of the semiconductor wafer and divided into individual wafers. (3) The honing method for a semiconductor wafer according to the above (1) or (2), wherein after the back surface of the semiconductor wafer is honed, the resin layer is heated and removed. (4) A honing method for a semiconductor wafer according to the above (3), wherein at least the resin layer is heated to 40 to 150 ° C to remove the resin layer. (5) The honing method of the semiconductor wafer according to any one of the above items (1) to (3), wherein at least the resin layer is brought into contact with 30 to 10 (TC of warm water to remove the resin layer 〇 (6) The honing method of the semiconductor wafer according to any one of the above items (1) to (5) wherein the protective sheet or the fixing jig is light transmissive, and the resin layer is composed of an acrylic resin composition. (7) The method of honing a semiconductor wafer according to any one of the above items (1) to (6), wherein the semiconductor wafer has a bump of 30 μm or more and 1 μm or less on the circuit surface. 200917353 (8) The method of honing a semiconductor wafer according to the above (6) or (7), wherein the fixing jig is 20% or more of light having a wavelength of 365 nm. (9) A resin composition, which is used The honing method of the semiconductor wafer according to any one of the above items (1) to (7), wherein the resin composition according to the above item (9) contains (A) a polyfunctional (meth)acrylic acid. The ester, (B) monofunctional (meth) acrylate, and (C) polymerization initiator, containing (B) 5 with respect to 100 parts by mass of the total of (A) and (B) (10) The resin composition of the above item (10), wherein the above (A) and (B) are both hydrophobic. (12) as described above (10). Or a resin composition of the item (11), wherein the (C) is a photopolymerization initiator. (13) A protective sheet which is used in any one of the above items (1) to (7). A method of honing a semiconductor wafer. (14) A protective sheet according to the above item (13), which contains at least one layer of a layer composed of ethylene-vinyl acetate. (15) As in the above item (13) or (14) A protective sheet having an adhesive layer on the surface. (16) The protective sheet according to the above item (15), wherein the adhesive layer is composed of an acrylic resin composition. Effect of the Invention The semiconductor wafer honing method of the present invention The resin composition using the same exhibits the following effects: the embossing property of the semiconductor wafer having 30 to ΙΟΟΟμπι on the circuit surface and further having 200917353 30 to 500 μm, especially the unevenness (bump) of 30 to 50 μm Excellent wafer retention when split into wafers, no crystal formation The cornering or picking is poor, and the working environment is also excellent. The best form for carrying out the invention (resin layer) The resin layer of the present invention is obtained by curing the resin composition described in detail below. The resin used in the present invention The resin layer obtained by hardening the composition is heated by heating, or is easily peeled off from the semiconductor wafer by contact with an organic solvent or water, and further preferably is not peeled off from the protective sheet at this time. The stripper or the contact with water is peeled off. Compared with the stripping method using organic solvent, it does not require larger equipment, and the working environment is also excellent, so it is better to choose. The resin composition may, for example, be an acrylic resin composition, and particularly preferably an acrylic resin which is suitably formulated with (A) a polyfunctional (meth) acrylate and (B) a monofunctional (meth) acrylate. Composition. Further, the acrylate and methacrylate are collectively referred to as (meth) acrylate. (A) Polyfunctional (meth) acrylates can be used for oligomers of polyfunctional (meth) acrylates having 2 or more (meth) propylene thiolated at the end of the oligomer/polymer or side chain / polymer or more than 2 (meth) propylene fluorenyl monomers. (B) Polyfunctional (meth) acrylate oligomer/polymer system, such as 1,2-polybutadiene terminal urethane (meth) acrylate (for example, manufactured by Japan Soda Co., Ltd.) TE-2 000, TEA-1 000), the aforementioned hydrogen additive (for example, 200917353, manufactured by Cao Da Co., Ltd. - 1 000), 1,4-polybutadiene terminal urethane (meth) acrylate ( For example, Osaka Organic Chemical Co., Ltd. BAC-45), polyisoprene terminal (meth) acrylate, polyester urethane (meth) acrylate, polyether urethane (A) Acrylate, polyester (meth) acrylate, bisphenol A type epoxy (meth) acrylate (for example, Biscote #540 by Osaka Organic Chemical Co., Ltd., Biscote VR-77 by Showa Polymer Co., Ltd.), amine group Formate (meth) acrylate (for example, UV-3 000B, manufactured by Nippon Synthetic Chemical Co., Ltd.). The bifunctional (meth) acrylate monomer may, for example, be 1,3-butanediol di(meth)acrylate or 1,4-butanediol di(meth)acrylate; Alcohol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, dicyclopentyl di(meth)acrylate, 2· Ethyl-2-butyl·propylene glycol (meth) acrylate, neopentyl glycol modified trimethyl propylene di(meth) acrylate, stearic acid modified pentaerythritol di acrylate, polypropylene glycol (Meth) acrylate, 2,2-bis(4-(methyl)propyl decyldiethoxyphenyl)propane, 2,2-bis(4-(methyl) propylene decylpropoxy Phenyl)propane, 2,2-bis(4-(methyl)propenyltetraethoxyphenyl)propane, bicyclodecyldi(meth)acrylate, and the like. The trifunctional (meth) acrylate monomer may, for example, be tris(hydroxy)propyl tris(meth)acrylate or tris[(meth)acryloxyethyl]polyisocyanate. The (meth) acrylate acid ester monomer of the above-mentioned item may, for example, be di-methylpropane tetra(meth) acrylate, pentaerythritol diacrylate vinegar tetrakis(methyl) acrylate S 曰, pentaerythritol ethoxylate Tetrakis(methyl) acrylate, dipentaerythritol 200917353 penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and the like. (A) The polyfunctional (meth) acrylate is more preferably hydrophobic. The hydrophobic polyfunctional (meth) acrylate is a (meth) acrylate having no hydroxyl group. As described above, in the case of water solubility, the hardened body of the resin composition during honing is subjected to swelling and causing displacement, which may result in poor processing accuracy. Even if it is hydrophilic, if the hardened body which is not a resin composition is greatly swollen or partially dissolved by water, it may be used even if it is used. (A) The amount of the polyfunctional (meth) acrylate to be added is preferably from 3 to 50 parts by mass, more preferably from 3 to 50 parts by mass, based on 100 parts by mass of the total amount of the monofunctional (meth) acrylate described later (A). It is 10 to 30 parts by mass. When it is 3 parts by mass or more, when the cured body of the resin composition is heated, the property of peeling off the hardened body from the adherend (hereinafter, simply referred to as "peelability") can be sufficiently promoted, and the film-like peeling resin composition can be ensured. Hardened body. Further, if it is 50 parts by mass or less, there is no possibility that the initial adhesiveness is lowered. (B) Monofunctional (meth) acrylate monomer, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (methyl) Acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, isodecyl (meth) acrylate, lauryl (meth) acrylate, stearyl (methyl) Cyan vinegar, phenyl (meth) acrylate vinegar, cyclohexyl (meth) acrylate, dicyclopentyl (meth) acrylate, dicyclopentenyl (meth) acrylate, two Cyclopentene oxyethyl (meth) acrylate, isobornyl (meth) acrylate, methoxylated cyclodecatriene (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (methyl) propyl-10- 200917353 enoate, tetrahydroindenyl (methyl) Acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, glycidyl (meth) acrylate, caprolactone modified tetrahydrogen (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, N,N-dimethylaminoethyl (meth) acrylate, hydrazine, hydrazine diethylamine Ethyl ethyl (meth) acrylate, tert-butylaminoethyl (meth) acrylate, ethoxycarbonyl methyl (meth) acrylate, phenol oxirane modified acrylate, phenol ( Ethylene oxide 2 molar modified) acrylate, phenol (ethylene oxide 4 molar modified) acrylate, p-cumyl phenol ethylene oxide modified acrylate, nonyl phenol ethylene oxide modification Acrylate, nonylphenol (ethylene oxide 4 molar modified) acrylate, nonylphenol (ethylene oxide 8 molar modified) acrylate, nonylphenol (propylene oxide 2.5 molar modified) Acrylate, 2-ethylhexylcarbitol acrylate, ethylene oxide modified decanoic acid (meth) acrylate, ethylene oxide modified succinic acid (meth) acrylate, trifluoroethyl (A) Acrylate, acrylic acid, methacrylic acid, maleic acid, fumaric acid, ω-carboxy-polycaprolactone mono(meth)acrylate, monohydroxyethyl citrate Acrylate, (meth) acrylate, Θ-(meth) propylene oxiranyl ethyl succinate, n- (meth) propylene oxyalkyl hexahydro imidate, 2- ( 1,2-cyclohexadecylimine)ethyl (meth) acrylate or the like. The (Β) monofunctional (meth) acrylate is preferably hydrophobic as in the case of (Α). In the case of water solubility, the hardened body of the resin composition during honing is subjected to swelling and causing displacement, which may result in poor processing accuracy. Hydrophobic here is a (meth) acrylate having no hydroxyl group. Further, even if it is hydrophilic, if the cured body of the resin composition is not swollen or partially dissolved by water, it may be used even if it is used. -11 - 200917353 (B) The amount of the monofunctional (meth) acrylate added is preferably 50 to 97 parts by mass, more preferably 70 to 90 parts by mass, based on 100 parts by mass of the total of (A) and (B). . When the amount is 50 parts by mass or more, the initial tackiness is not lowered, and if it is 97 parts by mass or less, the peeling property is good. Further, in the compounding composition of the above (A) and (B), (meth)acryloyloxyethyl phosphate, dibutyl 2-(meth)acryloyloxyethyl phosphate, Dioctyl 2-(methyl)propene oxiranyl phosphate, diphenyl 2-(methyl) propylene oxiranyl phosphate, (meth) propylene oxirane ethyl polyglycolate Such as having a vinyl or (meth)acrylic acid phosphate, the ruthenium can further enhance the adhesion of the metal surface. The (C) polymerization initiator used in the present invention is preferably formulated to promote photohardening of the resin composition by sensitization of active light which can be observed by light or ultraviolet rays, and various known photopolymerization initiators can be used. Specifically, for example, benzophenone and its derivatives; benzyl and its derivatives; anthraquinone and its derivatives; benzoin, benzoin methyl ether, benzoin ethyl ether a benzoin derivative such as benzoin propyl ether, benzoin isobutyl ether or benzyl dimethyl ketal; diethoxyethyl benzene, 4-tert-butyltrichloroethane Acetylbenzene derivatives such as benzene; 2-dimethylaminoethyl benzoate: p-dimethylaminoethyl benzoate; diphenyl disulfate ether; thioxanthone and its derivatives Ceramide, 7,7-dimethyl-2,3-dioxobicyclo[2.2.1] heptane-i-carboxylic acid, 7,7-dimethyl-2,3-dioxobicyclo [2.2.1] Heptane-1-carboxy-2-bromoethyl ester, 7,7-dimethyl-2,3-dioxabicyclo[2.2.1] heptane-1-carboxy-2-methyl Base ester, 7,7-dimethyl-2,3-dioxobicyclo[2·2·1]heptane-:[_carboxylic acid chloride and other camphorquinone derivatives; 2_methyl_-12 - 200917353 1-[4-(Methylthio)phenyl]-2-morpholinylpropan-1-one, 2-benzyl-2,2-dimethylamino-1-(4-morpholinylbenzene) Α-aminoalkylphenol derivative of ketone-butanone-1; benzamidine Phenylphosphine oxide, 2,4,6-trimethylbenzimidyl diphenylphosphine oxide, benzamidine diethoxyphosphorus oxide, 2,4,6-dimethylbenzamide A mercaptophosphorus oxide derivative such as a bismethoxyphenylphosphine oxide or a 2,4,6-trimethylbenzimidyldiethoxyphenylphosphorus oxide. The photopolymerization initiator may be used alone or in combination of two or more. (C) The amount of the polymerization initiator to be added is preferably 0.1 to 20 parts by mass based on 10 parts by mass of the total of (Α) and (Β). More preferably, it is 0.5 to 10 parts by mass. When the amount is 0.1 part by mass or more, the effect of promoting the hardening can be surely obtained, and a sufficient curing rate can be obtained at 20 parts by mass or less. In a more preferable form, (C) is added in an amount of 0 to 5 parts by mass, and it is hard to be cured depending on the amount of light irradiation, and the degree of crosslinking of the cured body of the resin composition is increased, so that no displacement occurs during the honing process. Or better in terms of improved peelability. Further, in the compound composition of the above (A), (B), and (C), when the compound having a benzene ring skeleton is contained, the affinity with the semiconductor protective sheet is improved, and the hardened body of the composition remains on the base. On the side of the material, only the peeling member can be recycled, so that the workability is excellent. In the present invention, a polar organic solvent may also be contained in the resin composition. By containing a polar organic solvent, the tantalum resin layer is easily expanded by contact with warm water, and the adhesion strength can be lowered. The polar organic solvent has a boiling point of preferably 3 (TC or more and 200 t or less. When a polar organic solvent having a boiling point within the above range is selected, the resin layer is in contact with warm water and the adhesion strength is lowered to be more reliably present - Further, such a polar organic solvent may, for example, be an alcohol, a ketone, an ester or the like, but it is preferable to select an alcohol according to the results of the inventors' research. The alcohol may, for example, be methanol, ethanol or n-propyl. Alcohol, isopropanol, n-butanol, isobutanol, second butanol, tert-butanol, n-pentyl alcohol, isoamyl alcohol, 2-ethylbutyl alcohol, etc. Further, among the aforementioned alcohols, a boiling point is preferred It is methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, second butanol, and third butanol below 1 20 ° C, of which methanol, ethanol and isopropanol are more preferred. The amount of the polar organic solvent to be added is preferably from 0.5 to 10 parts by mass based on 1 part by mass of the total of (A) and (B). If it is 0.5 part by mass or more, the peeling property can be ensured. If it is 10 parts by mass or less, there is no initial adhesiveness reduction, and the resin layer is thin. In the present invention, it is also possible to contain a particulate material which is insoluble in (A), (B) and (C). Thereby, the resin layer can be maintained at a constant thickness, so that the thickness of the honing is improved. The particulate matter which is not dissolved in (A), (B), and (C) may be any of organic particles and inorganic particles generally used as the material. Specific examples of the organic particles include polyethylene particles. Examples of the inorganic particles include polypropylene particles, crosslinked polymethyl methacrylate particles, and crosslinked polystyrene particles. Examples of the inorganic particles include ceramic particles such as glass, ceria, alumina, and titanium. Insoluble in (A), The particulate matter of B) and (C) is preferably spherical in shape and has a uniform particle size from the viewpoint of improving the thickness precision of the honing, that is, the control of the film thickness of the resin layer. Specifically, the organic particles may be borrowed, for example. Crosslinked polymethyl methacrylate particles and crosslinked benzene obtained by monodisperse particles from a known emulsion polymerization method of methyl methacrylate monomer-14-200917353, styrene monomer and crosslinkable monomer Ethylene particles, etc. The inorganic particles may, for example, be spherical ceria. Since the particle-based particles have less deformation and the film thickness of the resin layer which is caused by the unevenness of the particle diameter becomes uniform, it is preferable from the viewpoint of storage stability such as precipitation of particles or reactivity of the resin composition. More preferably, the polymethyl methacrylate particles and the crosslinked polystyrene particles are crosslinked. The film thickness of the cured product of the resin composition is appropriately selected according to the type, shape, size, and the like of the member, but The particle diameter of the particulate matter not dissolved in (A), (B), and (C) is preferably from 1 to 300 μm, particularly preferably from 10 to 200 μm, in the particle diameter of the particles, and is preferably Ιμιη or more to ensure peelability. If the ratio is less than 300 μm, the processing accuracy is not lowered. The distribution of the particle size is preferably as narrow as possible. The average particle size is a laser diffraction type particle size distribution measuring device (SALD- manufactured by Shimadzu Corporation) 2200" measurement. The amount of the particulate matter which is not dissolved in (A), (Β), and (C) is preferably 0.1 to 20 parts by mass, more preferably 0.1 to 20 parts by mass based on the total amount of (Α) and (Β). 10 parts by mass. When the film thickness of 0.1 part by mass or more of the resin layer is constant, if it is 20 parts by mass or less, the initial adhesion may be lowered. The resin composition of the present invention is not limited to the object of the present invention, and various elastomers such as acrylic rubber, urethane rubber, acrylonitrile-butadiene-styrene rubber, and the like which are generally used may be used. The amount of additives, solvents, extenders, reinforcing materials, plasticizers, tackifiers, dyes, pigments, flame retardants, decane coupling agents, surfactants, and the like. -15- 200917353 The resin composition of the present invention can use a small amount of a polymerization inhibitor for improving its storage stability. The polymerization inhibitor may, for example, be methylhydroquinone, hydroquinone, 2,2-methylene-bis(4-methyl-6-tert-butylphenol), catechol, hydroquinone monomethyl ether, Mono-tert-butylhydroquinone, 2,5-di-t-butylhydroquinone, p-benzoquinone, 2,5-diphenyl-p-benzoquinone, 2,5-di-t-butyl-p-benzoquinone, Picric acid, citric acid, phenothiazine, tert-butylcatechol, 2-butyl-4-hydroxyanisole, 2,6-t-butyl-p-cresol, and the like. The amount of the polymerization inhibitor to be used is preferably 0.001 to 3 parts by mass, more preferably 〇1 to 2 parts by mass, per 100 parts by mass of the monomer amount of (A) and (B). When the stability is ensured in the amount of 0.001 part by mass or more, it is preferably 3 parts by mass or less to obtain good adhesion, and it is not uncured. The resin layer obtained from the resin composition is preferably peeled off by contact with water or by contact with water as described above. The heating temperature is 40~150°C′, preferably 50~100°C, more preferably 55~80°C, and the warm water temperature when contacted with warm water is preferably 30~100°C, preferably 35~80 T. :, more preferably 40~60 °C, no need for huge equipment, and the handling on the job is very easy, so good. (Protective sheet) The protective sheet may be a sheet composed of a conventionally known synthetic resin, and may be a polyolefin other than ethylene-vinyl acetate, polyethylene, polypropylene, polybutene or polybutadiene. Polyvinyl chloride, polyethylene terephthalate, polyethylene naphthalate, polystyrene, polycarbonate, polyimine, or the like as a single or two or more laminated films. The thickness of the substrate in the protective sheet is preferably from 50 to 50 μm, more preferably from 70 to 25 μm. Compared with -16-200917353 5 0 0 μμη thick is due to the load applied during honing, sometimes the wafer is offset, the honing accuracy is lost, less than 50μηι, when the substrate film is formed, pinholes or fish are produced. Eyes, due to their influence, the honing accuracy is worse. When the resin composition j contains a photocurable resin such as an acrylic resin, it is preferable to use a film which is also light-transmitting. Further, since the protective sheet must be honed on the back surface of the semi-conductive gastric wafer to be described later to satisfy the strength characteristics, it is preferable that at least one layer or more of a layer composed of ethylene-vinyl acetate is contained. An adhesive layer made of an adhesive may be used for the protective sheet, and a general pressure-sensitive adhesive, an ultraviolet-curable adhesive, a heat-curing adhesive, or the like may be used as the adhesive. As the pressure-sensitive adhesive, an adhesive such as an acrylic resin, a rubber system or a polysiloxane can be used. UV-curable adhesive is a general-purpose pressure-sensitive adhesive formulated with a curable compound and an ultraviolet curing initiator. The adhesion can be adjusted by ultraviolet irradiation. Further, the heat-curing adhesive is a general pressure-sensitive adhesive which is formulated with a curable compound and a heat-curing initiator, and can be heated to adjust its adhesion. Among them, an adhesive composed of an acrylic resin composition is preferred. The thickness of the adhesive layer is preferably 3 to ΙΟΟμιη, more preferably 10 to 50 μm. When it is thicker than 1 〇〇μπι, the wafer may be misaligned due to the load applied during honing, and the honing accuracy may be deteriorated. When it is thinner than 3 μηι, the influence of the paste scraper generated during coating may be affected. The honing accuracy will be reduced. (fixed fixture) Fixing fixture should be smooth material'. Metallic plate, glass, stainless steel, aluminum, ceramic, iron, etc., acrylic, polycarbonate, ABS, PET, nylon, amine A resin plate-like body such as an acid ester, a polyimide, a polyolefin, or a chlorine resin, or a thick resin film, or the like, may be used alone or in combination of two or more. The fixing jig is preferably such that the wavelength of 3 6 5 n m is transmitted through 20% or more, and more preferably 50% or more. In general, when the resin composition is irradiated with light having a wavelength of 3 6 5 ηιη and hardened, the amount of irradiation of the light is appropriately set in order to complete the hardening in a specific time, and the amount of the irradiation light at this time is used as a reference, and the fixing jig is transmitted through 3 65 nm. When the wavelength is 20% or more, it does not take too much time to harden the resin composition, which is good. Further, the thickness of the fixing jig is not particularly limited, but it is preferably ΙΟΟμπι 10 mm, and it is more preferable to select 2 to 5 mm. In addition, the amount of light transmitted by the fixing jig or the like is "UVR - 2" manufactured by TopC〇n Co., Ltd., and the amount of light when the incident amount of light having a wavelength of 3 65 nm is 100 is measured. (Drilling method of semiconductor wafer) In a preferred embodiment of the present invention, the protective sheet or the fixing jig is formed in advance on the circuit side of the semiconductor wafer with a groove depth which is shallower than the thickness of the wafer. After 'honing the back side of the semiconductor wafer to thin the thickness of the semiconductor wafer', and finally in the backside honing method of the semiconductor wafer divided into the respective wafers, it can be used as the tracking and protection of the surface of the circuit And a means of fixing the semiconductor wafer. The preferred embodiment of the present invention specifically suggests a backside honing method for a semiconductor wafer comprising the following steps (1) to (5). (1) Cutting a groove of a specific depth of -18-200917353 along a line for dividing a circuit on a semiconductor wafer (refer to Fig. 1). (2) A resin composition (see Fig. 2) is applied so as to cover the entire circuit surface of the semiconductor wafer. Further, the coating method can be carried out in various coating forms such as a rod coating, a spray gun, and a spin coating. (3) The protective sheet or the fixing jig is bonded to the layer composed of the resin composition to irradiate visible light or ultraviolet rays to cure the photocurable resin layer. (3') After coating the resin composition in place of the above (2) and (3), irradiating visible light or ultraviolet light to cure the layer composed of the resin composition, and then bonding the protective sheet or the fixing jig (see the figure) 3). In the above (3) or (3), a uniform thickness accuracy can be obtained by applying weight from the outside of the protective sheet or the outside of the fixing tool. (4) The back surface of the semiconductor wafer is honed to a specific thickness and divided into individual wafers (see Fig. 4). (5) Apply another adhesive tape to the honing surface of the wafer and heat it to 40~150 °C ' or peel off the resin layer or protective sheet or fixing fixture from the wafer in contact with 40~l〇 (TC warm water). (Refer to Fig. 5.) Thereafter, the wafer is picked up and mounted on a specific substrate. [Embodiment] Hereinafter, the present invention will be described in more detail by way of examples of the invention, but it should not be construed as limited. Further, the composition (parts by mass) of the resin composition in each of the examples and the comparative examples, and the evaluation results are summarized in Tables 1 and 2. (Example-19-200917353

(實施例1 -1) (樹脂組成物） 添加（A)作爲多官能（甲基）丙烯酸酯之日本曹達公司 製「TE-2000」（1，2-聚丁二烯末端胺基甲酸酯、以下略稱 爲「TE-2000」）1〇質量份、二環癸基二丙烯酸酯（日本化 藥公司製「KAYARAD R - 684」、以下簡稱「R-684」）1〇 質量份、（B)作爲單官能（甲基）丙烯酸酯之2-(1，2-環六羰 醯亞胺）乙基丙烯酸酯（東亞合成公司製「Aronix M-140」 、以下「M-140」）30質量份、二環戊烯氧乙基甲基丙烯酸 酯「Rohm & Hass公司製「QM-6 5 7」」、以下簡稱「QM 」）50質量份、（C)作爲聚合起始劑之2-甲基-1-[4-(甲基硫） 苯基]-2-嗎啉基丙烷-1-酮（Ciba Specialty Chemicals公司 製「IRGACURE 907」、簡稱爲以下「IRGACURE 907」）2 質量份、及作爲聚合抑制劑之2,2-亞甲基-雙（4-甲基-6-第 三丁基酚）（以下簡稱爲「MDP」）0.1質量份，進行混合而 調製樹脂組成物。 (保護薄片） 使依據丁基丙烯酸酯80質量％、甲基（甲基）丙烯酸酯 1 9質量％、及2 ·羥基乙基丙烯酸酯1質量％之共聚物（玻璃 轉移點_53.3 °C)與2,4 -甲苯撐基二異氰酸酯之三羥甲基丙 烷的加成體所交聯之黏著劑層合於以乙烯—乙酸乙烯酯作 -20- 200917353 爲主體之160μιη厚的薄膜，得到保護薄片。又，藉τ模頭 共押出法使沾者劑厚度成型爲2〇gm，薄膜全體之厚度爲 1 6 0 μπι。 使用前述樹脂組成物與保護薄片，以如下所示之方法 貫施本發明之硏磨方法’進行評估。硏磨方法與評估係於 氧環境下進行。 (評估方法） (黏著性） 使直徑8英吋、厚度700μηι且ΙΟΟμιη之焊塊之矽晶圓 貼合於切割膠帶（電化學工業公司製「UHP - 1 0〇5Μ3」）， 使用切割鋸（Disc公司製「DAD - 341」），以35 μπι厚之刀 片，以切入量3 0 0 μ m、晶片大小3 m m 2之條件形成溝。然後 ，剝離切割膠帶，貼合樹脂組成物及保護片，以出現均一 面的方式加重1 0kg。其後，藉由使用無電極放電燈之 Fusion公司製硬化裝置，以365nm波長、2000mJ/cm2之條 件使樹脂組成物硬化。其後，使半導體晶圓的背面使用 Disc公司製 DFG- 850，進行硏磨至厚ΙΟΟμπ1，分割成各 個晶片。所分割之晶片的黏著性差，評估晶片飛濺之產生 數目，若爲不足50個爲〇，若爲51個以上不足100個爲△ ，若爲101個以上爲X。 <保持性> 藉與前述相同之方法，進行硏磨至厚100 μιη’分割成 -21 - 200917353 各個晶片。所分割之晶片的黏著性差’晶片偏移時爲> 不產生偏移而良好的情形爲〇。 <剝離性> 藉與前述相同之方法’進行硏磨至厚1 0 0 μ m ’分割 各個晶片。其後於晶片之硏磨面貼合黏著膠帶（電化學 業公司製「UHP - 1 10B」），加溫至60°C，剝離樹脂層 保護薄片。剝離時從樹脂層無法剝離晶片時爲X，不順 者可剝離時爲△，可順利剝離時爲〇。 <黏著強度〉 依據JI S K 6 8 5 0，測定黏著強度。具體上，使用耐 玻璃（商品名「耐熱 Pyrex玻璃」、25mmx25mmx 2 _ 0 m m )作爲被黏材。使黏著部位爲8 m m φ ，以樹脂組成 貼合2片的耐熱玻璃。藉由使用無電極放電燈之Fusion 司製硬化裝置，以365nm之波長的積分光量2〇〇〇mJ/cm: 件硬化，製作抗拉剪斷黏著強度試驗片。試驗片係使用 能試驗機，以溫度23 °C、濕度50%的環境下、抗拉速 10mm/分測定抗拉剪斷黏著強度。 成 工 及 利 熱 厚 物 公 條 萬 度 -22- 200917353 比較例 1-1 1 X X X 不能測定 實施例 1-10 § 0.01 〇 〇 〇 11.1 實施例 1-8 § 0.01 〇 〇 〇 m· 實施例 1-7 (N < 〇 〇 1 i 實施例 1-6 〇 <N 〇 〇 〇 14.2 實施例 1-5 g 卜 〇 〇 〇〇 τ丨_< 實施例 1-4 (N 〇 <3 〇 〇 11.3 實施例 1-3 Ο (N 〇 〇 〇 12.2 實施例 1-2 m (N 〇 〇 14.2 實施例 1-1 § (N 〇 〇 〇 12.3 單位 [質量份] [質量份] [質量份] 福 r-j-! I—|*Ί 1? Ο. s 多官能(甲基)丙烯酸酯(A) 單官能(甲基)丙烯酸酯⑼ 聚合起始劑(C) 黏著性(晶片飛濺） 剝離性 保持性 黏著強度 -23 - 200917353 (實施例1 - 2〜1 - 8 ) 在實施例1 - 1中，除變更樹脂組成物之（A)多官能（甲 基）丙嫌酸酯與（B)單官能（甲基）丙烯酸酯之比率，變更（c) 聚合起始劑之比率以外，其餘係與實施例1 _ 1同樣的操作 ’進行評估。日本曹達公司製r TE - 2000」與二環癸基 二丙烯酸酯之比率、2 - (1，2 -環六羰醯亞胺）乙基丙烯酸 酯與一環戊基氧乙基甲基丙嫌酸醋之比率係與實施例1_ 1 相同做法。 (比較例1 - 1) 就比較例而言，在實施例1 - 1中，只使用習知之黏著 薄片而與實施例1 - 1同樣地操作，進行評估。又’黏著薄 片係使用專利文獻3(專利第3 77 3 3 5 8號公報）的實施例1記 載的黏著膠帶，進行晶圓的保持性等之評估。藉由使用 JIS - A硬度低之黏著薄片’晶圓的保持性差’硏磨精度 差，且晶片化時晶片偏移，產生晶片飛濺。又’晶片於黏 著薄片側會移動，未順利地剝離。 (實施例1 - 9) 在實施例1 - 1中，剝離晶片時浸漬於4 0 °c的溫水後’ 樹脂層附著之保護薄片與晶片可順利地剝離。 (實施例1 - 10) (樹脂組成物） -24- 200917353 除添加（A)作爲多官能（甲基）丙烯酸酯之日本曹達公 司製「TEAI - 1 000」（I,4-聚丁二烯末端胺基甲酸酯（甲基 )丙烯酸酯）20質量份、（B)作爲單官能（甲基）丙烯酸酯之丁 基（甲基）丙烯酸酯80質量份、（C)作爲聚合起始劑之苯偶 因乙基醚2質量份、及作爲聚合抑制劑之第三丁基兒茶酚 〇. 1質量份，進行混合而調製樹脂組成物以外，其餘係與 實施例1 - 1相同之操作進行評估。 (實施例1 - 1 1) 在實施例1 - 1中，相對於（A)及（B)之合計量1 0 0質量 份，添加5質量份之粒狀物質（平均粒徑5 0 μιη之交聯聚甲 基丙烯酸甲酯粒子、根上工業公司製Artpearl GR - 200、 以下簡稱爲「GR - 200」），進行混合而調製樹脂組成物 以外，其餘係與實施例1 - 1同樣的操作，進行評估。樹脂 層之膜厚達ΙΟΟμηι爲一定，硏磨厚度精度會提高。剝離性 與保持性爲〇。 (實施例2-1) (樹脂組成物） 添加（Α)作爲多官能（甲基）丙烯酸酯之曰本合成化學 公司製「UV - 3000Β」（胺基甲酸酯丙烯酸酯、以下略稱 爲「UV - 3000Β」）8質量份、二環癸基二丙烯酸酯（日本 化藥公司製「KA YARAD R - 684」、以下簡稱「R - 684」 )12質量份、（Β)作爲單官能（甲基）丙烯酸酯之2 - (1,2 -環 -25 200917353 六羰醯亞胺）乙基丙烯酸酯（東亞合成公司製「Aronix Μ -140」、以下「Μ - 140」）30質量份、二環戊烯氧乙基甲 基丙烯酸酯「Rohm & Hass公司製「QM - 657」」、以下 簡稱「QM」）50質量份、（C)作爲聚合起始劑之2 -甲基一 1 - [4 -(甲基硫）苯基]-2 -嗎啉基丙烷—i -酮（Ciba Specialty Chemicals 公司製「IRGACURE 907」、簡稱爲 以下「IRGACURE 90 7」）2質量份、及作爲聚合抑制劑之 2,2-亞甲基-雙（4-甲基-6-第三丁基酚）（以下簡稱爲 「MDP」）0· 1質量份，進行混合而調製樹脂組成物。 (固定用治具） 固定用治具係使用透過波長3 65nm之光80%之厚的 3mm玻璃板。 使用前述樹脂組成物與固定用治具，以下述之方法實 施本發明之硏磨方法進行評估。 (評估方法） (黏著性） 使直徑8英吋、厚度700μηι且ΙΟΟμιη之焊塊之矽晶圓 貼合於切割膠帶（電化學工業公司製「UHP - 1〇〇 5 M3」）， 使用切割鋸（D i s c公司製「D A D - 3 4 1」），以3 5 μιη厚之刀 片，以切入量300μιη、晶片大小3mm2之條件形成溝。然後 ’剝離切割膠帶，貼合樹脂組成物及保護片’以出現均一 面的方式加重1 OKg。其後，藉由使用無電極放電燈之 -26- 200917353(Example 1-1) (Resin composition) (TE) "TE-2000" (1,2-polybutadiene terminal urethane manufactured by Japan Soda Co., Ltd.) as a polyfunctional (meth) acrylate was added. (hereinafter referred to as "TE-2000") 1 part by mass, dicyclodecyl diacrylate ("KAYARAD R-684" manufactured by Nippon Kayaku Co., Ltd., hereinafter referred to as "R-684") 1 part by mass, ( B) 2-(1,2-cyclohexacarbonylimide)ethyl acrylate as monofunctional (meth) acrylate ("Aronix M-140" manufactured by Toagosei Co., Ltd., "M-140" below) 30 Parts by mass, dicyclopentene oxyethyl methacrylate "Rohm & Hass Corporation "QM-6 5 7", hereinafter referred to as "QM") 50 parts by mass, (C) as a polymerization initiator 2 -Methyl-1-[4-(methylthio)phenyl]-2-morpholinylpropan-1-one ("IRGACURE 907" manufactured by Ciba Specialty Chemicals Co., Ltd., abbreviated as "IRGACURE 907") 2 parts by mass Further, 0.1 parts by mass of 2,2-methylene-bis(4-methyl-6-tert-butylphenol) (hereinafter abbreviated as "MDP") as a polymerization inhibitor was mixed to prepare a resin composition. (Protective sheet) A copolymer based on 80% by mass of butyl acrylate, 19% by mass of methyl (meth) acrylate, and 1% by mass of 2 hydroxyethyl acrylate (glass transition point _53.3 ° C) The adhesive crosslinked with the adduct of trimethylolpropane of 2,4-tolyl diisocyanate is laminated to a 160 μm thick film mainly composed of ethylene-vinyl acetate as -20-200917353, and is protected. Sheet. Further, the thickness of the dipstick is 2 〇gm by the τ die co-extrusion method, and the thickness of the entire film is 1600 μm. Using the foregoing resin composition and protective sheet, evaluation was carried out by applying the honing method of the present invention as shown below. The honing method and evaluation are carried out in an oxygen environment. (Evaluation method) (Adhesive property) A wafer having a diameter of 8 inches, a thickness of 700 μm, and a solder bump of ΙΟΟμιη was bonded to a dicing tape ("UHP - 1 0〇5Μ3" manufactured by Electrochemical Industry Co., Ltd.), using a dicing saw ( "DAD-341" manufactured by Disc Co., Ltd., forming a groove with a blade of 35 μm thick, with a cutting amount of 300 μm and a wafer size of 3 mm 2 . Then, the dicing tape was peeled off, and the resin composition and the protective sheet were bonded, and 10 kg was weighted in a uniform manner. Thereafter, the resin composition was cured at a wavelength of 365 nm and 2000 mJ/cm 2 by using a curing apparatus manufactured by Fusion Co., Ltd. using an electrodeless discharge lamp. Thereafter, the back surface of the semiconductor wafer was subjected to honing to a thickness of μπ1 using a DFG-850 manufactured by Disc Corporation, and divided into individual wafers. The number of generated wafer spatters is poor, and the number of occurrences of wafer spatter is estimated to be less than 50, and if it is 51 or more, less than 100 is Δ, and 101 or more is X. <Retention> By the same method as described above, honing to a thickness of 100 μm was divided into -21 - 200917353 respective wafers. The difference in the adhesion of the divided wafers is "when the wafer is shifted" is not good, and the case is good. <Peeling property> Each wafer was honed to a thickness of 100 μm by the same method as described above. Then, an adhesive tape ("UHP-1 10B" manufactured by Electrochemical Co., Ltd.) was attached to the honing surface of the wafer, and the mixture was heated to 60 ° C to peel off the resin layer protective sheet. When the film is peeled off from the resin layer, it is X when it is not peeled off from the resin layer, and when it is not peelable, it is Δ, and when it is peeled off smoothly, it is 〇. <Adhesive strength> The adhesion strength was measured in accordance with JI S K 6 8 5 0. Specifically, a glass (trade name "heat resistant Pyrex glass", 25 mm x 25 mm x 2 _ 0 m m ) was used as the adherend. The adhesive portion is 8 m m φ , and two sheets of heat-resistant glass are bonded together in a resin composition. A tensile shear strength test piece was prepared by using a Fusion curing device using an electrodeless discharge lamp to harden an integrated light amount of 2 〇〇〇 mJ/cm: at a wavelength of 365 nm. The test piece was subjected to a tester, and the tensile shear strength was measured at a temperature of 23 ° C and a humidity of 50% at a tensile speed of 10 mm/min. Chenggong and Li Hot Thick Articles Wandu-22- 200917353 Comparative Example 1-1 1 XXX Cannot be measured Example 1-10 § 0.01 〇〇〇11.1 Example 1-8 § 0.01 〇〇〇m· Example 1 -7 (N < 〇〇 1 i Example 1-6 〇 <N 〇〇〇 14.2 Examples 1-5 g 卜 〇〇〇〇 丨 & & 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 3 3 3 3 〇〇 11.3 Example 1-3 Ο (N 〇〇〇 12.2 Example 1-2 m (N 〇〇 14.2 Example 1-1 § (N 〇〇〇 12.3 units [parts by mass] [parts by mass] [parts by mass ] 福rj-! I—|*Ί 1? Ο. s Polyfunctional (meth) acrylate (A) Monofunctional (meth) acrylate (9) Polymerization initiator (C) Adhesion (wafer splash) Peelability Retention adhesive strength -23 - 200917353 (Example 1 - 2 to 1 - 8 ) In Example 1-1, except that the (A) polyfunctional (meth) propionate and (B) of the resin composition were changed. The ratio of the monofunctional (meth) acrylate was changed to (c) the ratio of the polymerization initiator, and the others were evaluated in the same manner as in Example 1 _1. The r TE - 2000 manufactured by Japan Soda Corporation. The ratio of the ratio to the bicyclodecyl diacrylate, the ratio of 2-(1,2-cyclohexacarbonylimide)ethyl acrylate to monocyclopentyloxyethyl methyl acrylate vinegar is the same as in Example 1_ (Comparative Example 1 - 1) In the comparative example, in the first embodiment, only the conventional adhesive sheet was used, and the evaluation was carried out in the same manner as in Example 1-1. The adhesive tape described in Example 1 of Patent Document 3 (Patent No. 3 77 3 3 8) was used to evaluate the retention of the wafer, etc. by using a JIS-A adhesive sheet having a low hardness. The poor retention is poor in honing accuracy, and the wafer is deflected during wafer formation, causing wafer spatter. Further, the wafer moves on the side of the adhesive sheet and does not smoothly peel off. (Examples 1 - 9) In Example 1-1, After the wafer was immersed in warm water of 40 ° C, the protective sheet adhered to the resin layer and the wafer were smoothly peeled off. (Examples 1 - 10) (Resin composition) -24- 200917353 In addition to adding (A) as much "TEAI - 1 000" (I, 4-polybutyl) made by Japan's Soda Co., Ltd. 20 parts by mass of olefinic terminal urethane (meth) acrylate), (B) 80 parts by mass of butyl (meth) acrylate as monofunctional (meth) acrylate, (C) as a polymerization initiation 2 parts by mass of the benzoin ethyl ether of the agent and 1 part by mass of the third butyl catechol oxime as a polymerization inhibitor, and the mixture was mixed to prepare a resin composition, and the rest was the same as in Example 1-1. The operation is evaluated. (Example 1 - 1 1) In Example 1-1, 5 parts by mass of a particulate matter (average particle diameter of 50 μm) was added to 100 parts by mass of the total of (A) and (B). The same procedure as in Example 1-1 was carried out, except that the cross-linked polymethyl methacrylate particles and Artpearl GR-200 manufactured by K.K., Ltd., hereinafter referred to as "GR-200") were mixed and prepared to prepare a resin composition. to evaluate. The thickness of the resin layer is as high as ΙΟΟμηι, and the thickness accuracy of honing is improved. Peelability and retention are flaws. (Example 2-1) (Resin composition) "UV - 3000 Β" (amino acrylate), which is a polyfunctional (meth) acrylate, is used as a polyfunctional (meth) acrylate. "UV - 3000 Β") 8 parts by mass of dicyclodecyl diacrylate ("KA YARAD R-684" manufactured by Nippon Kayaku Co., Ltd., hereinafter referred to as "R-684") 12 parts by mass, (Β) as a monofunctional ( Methyl acrylate 2 - (1,2 -cyclo-25 200917353 hexacarbonyl quinone) ethyl acrylate ("Aronix Μ -140" manufactured by Toagosei Co., Ltd., the following "Μ - 140") 30 parts by mass, Dicyclopentene oxyethyl methacrylate "Rohm & Hass Corporation "QM - 657", hereinafter referred to as "QM") 50 parts by mass, (C) as a polymerization initiator 2 - methyl-1 - [4-(methylthio)phenyl]-2- morpholinylpropane-i-ketone ("IRGACURE 907" manufactured by Ciba Specialty Chemicals Co., Ltd., abbreviated as "IRGACURE 90 7") 2 parts by mass, and as a polymerization Inhibitor 2,2-methylene-bis(4-methyl-6-tert-butylphenol) (hereinafter abbreviated as "MDP") 0.1 part by mass, mixed To prepare a resin composition. (Fixture Fixture) The fixture used for fixing is a 3 mm glass plate that is 80% thick by light having a wavelength of 3 65 nm. The honing method of the present invention was evaluated by the following method using the above resin composition and fixing jig. (Evaluation method) (Adhesive property) A wafer having a diameter of 8 inches, a thickness of 700 μm, and a solder bump of ΙΟΟμιη is attached to a dicing tape ("UHP - 1〇〇5 M3" manufactured by Electrochemical Industries, Inc.), using a dicing saw ("DAD - 3 4 1" manufactured by Disco Corporation), a groove was formed under the conditions of a cutting amount of 300 μm and a wafer size of 3 mm 2 with a blade of 3 5 μm thick. Then, the 'peeling of the dicing tape, the resin composition and the protective sheet affixed' were weighted by 1 OKg in such a manner as to appear uniform. Thereafter, by using an electrodeless discharge lamp -26- 200917353

Fusion公司製硬化裝置，以3 65nm波 件使樹脂組成物硬化。其後，使半§ Disc公司製DFG - 850，進行硏磨至 個晶片。所分割之晶片的黏著性差’ 數目，若爲不足50個爲〇’若爲51個 ，若爲101個以上爲x° <保持性> 與實施例1 1之評估方法同樣地: <剝離性> 與實施例1 - 1之評估方法同樣地: 長、2000mJ/cm2 之條 _體晶圓的背面使用 厚ΙΟΟμιη，分割成各 評估晶片飛濺之產生 以上不足1〇〇個爲△ 行。 行。 -27 - 200917353 比較例 2-1 1 X X X 不能測定 實施例 1 2-10 g 0.01 〇 〇 〇 15.4 實施例 2-8 g 0.01 〇 〇 〇 12.8 實施例 2-7 (N <] 〇 〇 16.3 實施例 | 2-6 〇 (N 〇 〇 〇 σ< 實施例 2-5 § 〇 < 〇 〇 17.2 實施例 2-4 o <3 〇 〇 15.3 實施例 1^3 〇 (N 〇 〇 〇 16.4 實施例 2-2 (N 〇 < 〇 ΟΟ οό 實施例 2-1 g (N 〇 〇 〇 10.2 i mlinl] $ mlmll rnlnll m r-j~i r-j—1 2 Oh 螂 啊 S S 啊 5 多官能(甲基)丙烯酸酯⑷ 單官能(甲基)丙烯酸酯(B) 聚合起始劑(c) 黏著性(晶片飛濺） 剝離性 保持性 黏著強度The Fusion company's hardening device hardens the resin composition with a 3 65 nm wave. Thereafter, the DFG-850 manufactured by the company was honed to a wafer. The number of the difference in the adhesion of the divided wafers is less than 50, if it is 51, and if it is 51 or more, it is x° <Retention> The same as the evaluation method of the embodiment 1: < Peeling property> In the same manner as in the evaluation method of Example 1-1, the back surface of the strip of 2,000 mJ/cm 2 was thick, and the thickness of the wafer was divided into less than one ray of each evaluation wafer. . Row. -27 - 200917353 Comparative Example 2-1 1 XXX Cannot be measured Example 1 2-10 g 0.01 〇〇〇 15.4 Example 2-8 g 0.01 〇〇〇 12.8 Example 2-7 (N <] 〇〇 16.3 Implementation Example | 2-6 〇(N 〇〇〇σ< Example 2-5 § 〇< 〇〇 17.2 Example 2-4 o <3 〇〇15.3 Example 1^3 〇(N 〇〇〇16.4 Implementation Example 2-2 (N 〇 < 〇ΟΟ οό Example 2-1 g (N 〇〇〇 10.2 i mlinl) $ mlmll rnlnll m rj~i rj-1 2 Oh 螂 SS SS ah 5 Multifunctional (methyl) Acrylate (4) Monofunctional (meth) acrylate (B) Polymerization initiator (c) Adhesion (wafer splash) Peel retention adhesive strength

-28- 200917353 (實施例2 - 2〜2 - 8) 在實施例2 - 1中，除變更樹脂組成物之（A)多官能（甲 基）丙烯酸酯與（B)單官能（甲基）丙烯酸酯之比率，變寅（C) 聚合起始劑之比率以外，其餘係與實施例2 - 1同樣的操作 ，進行評估。日本合成化學公司製「UV - 3000B」與二環 癸基二丙烯酸酯之比率、2 - (1，2 -環六羰醯亞胺）乙基丙 烯酸酯與二環戊基氧乙基甲基丙烯酸酯之比率係與實施例 2 - 1相同做法。 (比較例2 - 1) 就比較例而言，在實施例2 - 1中’只使用習知之黏著 薄片而與實施例2 - 1同樣地操作，進行評估。又’黏著薄 片係使用專利文獻3(專利第3 773 3 5 8號公報）的實施例1記 載的黏著膠帶，進行晶圓的保持性等之評估。藉由使用 JIS - A硬度低之黏著薄片，晶圓的保持性差’硏磨精度 差，且晶片化時晶片偏移’產生晶片飛濺。又’晶片於黏 著薄片側會移動，未順利地剝離。 (實施例2 - 9) 在實施例2 - 1中’剝離晶片時浸漬於40 °C的溫水後’ 樹脂層附著之固定用治具與晶片可順利地剝離。 (實施例2 - 10) (樹脂組成物） -29- 200917353 除添加（A)作爲多官能（甲基）丙烯酸酯之大阪有機化 學公司製「BAC-45」（聚異戊二烯末端（甲基）丙烯酸酯）2〇 質量份、（B)作爲單官能（甲基）丙烯酸酯之異冰片基（甲基） 丙烯酸酯80質量份、（C)作爲聚合起始劑之4_第三丁基三 氯乙醯苯2質量份、及作爲聚合抑制劑之吩噻嗪〇」質量份 ，進行混合而調製樹脂組成物以外，其餘係與實施例2 - 1 相同之操作進行評估。 (實施例2 - 1 1 ) 在實施例2 - 1中，相對於（A)及（B)之合計量100質量 份，添加5質量份之粒狀物質（平均粒徑50μπι之交聯聚甲 基丙烯酸甲酯粒子、根上工業公司製Artpearl GR - 200、 以下簡稱爲「GR - 2 00」），進行混合而調製樹脂組成物 以外，其餘係與實施例2 - 1同樣的操作，進行評估。樹脂 層之膜厚達1〇〇 μιη爲一定，硏磨厚度精度會提高。剝離性 與保持性爲〇。 從實施例之結果可知以下之事情。 (1) 本發明之樹脂組成物係即使氧環境下亦進行硬化，故 谷易剝離。 (2) 本發明之樹脂組成物係剝離性、保持性、黏著性均良 好。 產業上之利用可能性 本發明係硏磨加工時之凹凸追蹤性及分割成各晶片時 -30- 200917353 之晶片保持性優，不產生晶片缺角或拾取不良，而與半導 體晶圓之黏著性，剝離性優之構件、加工方法；可適宜使 用於具有電路面高之凹凸的半導體晶圓之背面硏磨，故產 業上有用。 又’ 2007年6月22日所申請之日本專利申請2007-164934號及2007年6月22日所申請之日本專利申請2〇〇7-1 6 4 9 5 1號之說明書、申請專利範圍、圖面及摘要的全內容 引用於此，摘錄作爲本發明之說明書的揭示。 【圖式簡單說明】 圖1係說明本發明之硏磨方法的一實施形態之圖，表 示沿著用以區隔電路之直線而硏磨特定深度之溝的半導體 晶圓。 圖2係說明本發明之硏磨方法的一實施形態之圖，表 示於圖1之半導體晶圓的電路面上塗佈樹脂組成物之狀態 〇 圖3係說明本發明之硏磨方法的一實施形態之圖，表 示於圖2之半導體晶圓的電路面上之樹脂組成物被覆保護 薄片或固定用治具之狀態。 圖4係說明本發明之硏磨方法的一實施形態之圖，表 示硏磨圖3之半導體晶圓的背面之狀態。 圖5係說明本發明之硏磨方法的一實施形態之圖，表 示於圖4之半導體晶圓的背面貼黏黏著薄片，進行加熱或 浸漬於溫水而剝離具有樹脂層之保護薄片的狀態。 -31 - 200917353 【主要元件符號說明】 1 :半導體晶圓 2 :凸塊 3 :溝 4 :樹脂層 5 :保護薄片或固定用治具 6 : 晶片 7 :黏著膠帶 -32--28-200917353 (Example 2 - 2 to 2 - 8) In Example 2-1, in addition to changing the resin composition (A) polyfunctional (meth) acrylate and (B) monofunctional (methyl) The same procedure as in Example 2-1 was carried out except that the ratio of the acrylate to the ratio of the oxime (C) polymerization initiator was evaluated. The ratio of "UV - 3000B" to bicyclodecyl diacrylate manufactured by Nippon Synthetic Chemical Co., Ltd., 2 - (1,2-cyclohexacarbonylimide) ethyl acrylate and dicyclopentyloxyethyl methacrylate The ratio of esters was the same as in Example 2-1. (Comparative Example 2 - 1) In the comparative example, the evaluation was carried out in the same manner as in Example 2-1 using only the conventional adhesive sheet in Example 2-1. Further, the adhesive sheet described in Example 1 of Patent Document 3 (Patent No. 3 773 395) was used for evaluation of wafer retention and the like. By using an adhesive sheet having a low JIS-A hardness, the wafer retainability is poor, the honing precision is poor, and the wafer offset during wafer formation generates wafer spatter. Further, the wafer moved on the side of the adhesive sheet and did not peel smoothly. (Examples 2 - 9) In Example 2-1, when the wafer was peeled off and immersed in warm water at 40 °C, the fixing jig to which the resin layer adhered and the wafer were smoothly peeled off. (Example 2 - 10) (Resin composition) -29- 200917353 In addition to (A) "BAC-45" (polyisoprene terminal) manufactured by Osaka Organic Chemical Co., Ltd. as a polyfunctional (meth) acrylate (B) acrylate) 2 parts by mass, (B) as a monofunctional (meth) acrylate isobornyl (meth) acrylate 80 parts by mass, (C) as a polymerization initiator 4_ third The same procedure as in Example 2-1 was carried out except that 2 parts by mass of chlorotrimethylene benzene and phenothiazin as a polymerization inhibitor were mixed to prepare a resin composition. (Example 2 - 1 1 ) In Example 2-1, 5 parts by mass of a particulate matter (crosslinked polymethyl group having an average particle diameter of 50 μπι) was added to 100 parts by mass of the total amount of (A) and (B). The evaluation was carried out in the same manner as in Example 2-1 except that the methyl acrylate particles and Artpearl GR-200 manufactured by Kokusai Industrial Co., Ltd., hereinafter abbreviated as "GR - 00") were mixed and prepared. The thickness of the resin layer is as high as 1 〇〇 μιη, and the thickness accuracy of honing is improved. Peelability and retention are flaws. The following things are known from the results of the examples. (1) The resin composition of the present invention is hardened even in an oxygen atmosphere, so that the valley is easily peeled off. (2) The resin composition of the present invention is excellent in peelability, retention, and adhesion. INDUSTRIAL APPLICABILITY The present invention is excellent in the tracking property during honing processing and the wafer retention property of -30-200917353 when divided into wafers, and does not cause wafer nicking or pick-up defects, and adhesion to semiconductor wafers. It is industrially useful because it is suitable for use in a back surface of a semiconductor wafer having a high surface roughness. Japanese Patent Application No. 2007-164934, filed on Jun. 22, 2007, and Japanese Patent Application No. PCT-A No. The entire contents of the drawings and abstracts are incorporated herein by reference. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an embodiment of a honing method of the present invention, showing a semiconductor wafer honing a groove of a specific depth along a line for dividing a circuit. 2 is a view showing an embodiment of the honing method of the present invention, showing a state in which a resin composition is applied to a circuit surface of the semiconductor wafer of FIG. 1. FIG. 3 is a view showing an implementation of the honing method of the present invention. The figure is a state in which the resin composition on the circuit surface of the semiconductor wafer of FIG. 2 is covered with a protective sheet or a fixture. Fig. 4 is a view showing an embodiment of the honing method of the present invention, showing a state in which the back surface of the semiconductor wafer of Fig. 3 is honed. Fig. 5 is a view showing an embodiment of the honing method of the present invention, showing a state in which a pressure-sensitive adhesive sheet is adhered to the back surface of the semiconductor wafer of Fig. 4, and heated or immersed in warm water to peel off the protective sheet having the resin layer. -31 - 200917353 [Explanation of main component symbols] 1 : Semiconductor wafer 2 : Bump 3 : Groove 4 : Resin layer 5 : Protective sheet or fixing jig 6 : Wafer 7 : Adhesive tape -32-

Claims (1)

200917353 十、申請專利範圍 1 · 一種半導體晶圓之硏磨方法，其係於半導體晶圓之 電路面側介由可從前述半導體晶圓剝離之樹脂層而設有保 護薄片或固定用治具，硏磨前述半導體晶圓之背面。 2 ·如申請專利範圍第1項之半導體晶圓之硏磨方法， 其中於半導體晶圓之電路面側形成較晶圓厚度更淺之深度 的溝，使形成樹脂層之樹脂組成物全面地塗佈，硏磨前述 半導體晶圓之背面而分割成各個晶片。 3 .如申請專利範圍第1或2項之半導體晶圓之硏磨方法 ，其中於硏磨半導體晶圓之背面之後，加熱樹脂層而除去 〇 4 .如申請專利範圍第3項之半導體晶圓之硏磨方法， 其中至少使樹脂層加熱至40〜150 °C，以除去樹脂層。 5 ·如申請專利範圍第1 ~3項中任一項的半導體晶圓之 硏磨方法，其中至少使樹脂層接觸於30〜10 0°C之溫水，以 除去樹脂層。 6 ·如申請專利範圍第1 ~5項中任一項的半導體晶圓之 硏磨方法，其中保護片或固定用治具爲光透過性，樹脂層 爲由丙烯酸系樹脂組成物所構成。 7.如申請專利範圍第1〜6項中任一項的半導體晶圓之 硏磨方法，其中半導體晶圓爲於電路面具有30μηι以上 ΙΟΟΟμιη以下之凹凸。 8 _如申請專利範圍第6或7項之半導體晶圓之硏磨方法 ’其中固定用治具爲透過波長365 nm之光20 %以上者。 -33- 200917353 9. 一種樹脂組成物，其係使用於如申請專利範圍第 1〜7項中任一項的半導體晶圓之硏磨方法。 1 0.如申請專利範圍第9項之樹脂組成物，其中含有 (A)多官能（甲基）丙烯酸酯、（B)單官能（甲基）丙烯酸酯及 (C)聚合起始劑，相對於（A)與（b)之合計量ι〇〇質量份，含 有（B)50〜97質量份’（C)0.1〜20質量份。 1 1 .如申請專利範圍第1 0項之樹脂組成物，其中前述 (A)及（B)皆爲疏水性。 1 2 .如申請專利範圍第丨〇或丨丨項之樹脂組成物，其中 前述（C)爲光聚合起始劑。 13· —種保護薄片，其係使用於如申請專利範圍第1〜7 項中任一項的半導體晶圓之硏磨方法。 1 4 .如申請專利範圍第1 3項之保護薄片，其中含有至 少一層以上由乙烯-乙酸乙烯酯所構成之層。 1 5 .如申請專利範圍第1 3或1 4項之保護薄片，其中於 表面具有黏著層。 16.如申請專利範圍第15項之保護薄片’其中黏著層 爲由丙烯酸系樹脂組成物所構成。 -34-200917353 X. Patent Application No. 1 A honing method for a semiconductor wafer, which is provided with a protective sheet or a fixing jig on a circuit surface side of a semiconductor wafer via a resin layer which can be peeled off from the semiconductor wafer. The back side of the aforementioned semiconductor wafer is honed. 2. The honing method for a semiconductor wafer according to claim 1, wherein a groove having a shallower depth than a wafer is formed on a circuit surface side of the semiconductor wafer, and the resin composition forming the resin layer is entirely coated. The cloth is honed to the back side of the semiconductor wafer and divided into individual wafers. 3. The method of honing a semiconductor wafer according to claim 1 or 2, wherein after honing the back side of the semiconductor wafer, the resin layer is heated to remove 〇4. The semiconductor wafer of claim 3 The honing method, wherein at least the resin layer is heated to 40 to 150 ° C to remove the resin layer. The honing method for a semiconductor wafer according to any one of claims 1 to 3, wherein at least the resin layer is brought into contact with warm water of 30 to 10 ° C to remove the resin layer. The honing method for a semiconductor wafer according to any one of claims 1 to 5, wherein the protective sheet or the fixing jig is light transmissive, and the resin layer is composed of an acrylic resin composition. 7. The honing method for a semiconductor wafer according to any one of claims 1 to 6, wherein the semiconductor wafer has irregularities of 30 μm or more and ΙΟΟΟμη or less on the circuit surface. 8 _ The honing method for semiconductor wafers as claimed in claim 6 or 7 wherein the fixture is 20% or more of light having a wavelength of 365 nm. -33-200917353 9. A resin composition for use in a honing method for a semiconductor wafer according to any one of claims 1 to 7. A resin composition according to claim 9 which contains (A) a polyfunctional (meth) acrylate, (B) a monofunctional (meth) acrylate, and (C) a polymerization initiator, as opposed to The total amount of (1) and (b) is ι by mass, and contains (B) 50 to 97 parts by mass of '(C) 0.1 to 20 parts by mass. 1 1. The resin composition of claim 10, wherein both (A) and (B) are hydrophobic. The resin composition of the invention of claim </ RTI> wherein the above (C) is a photopolymerization initiator. A protective sheet for use in a honing method for a semiconductor wafer according to any one of claims 1 to 7. A protective sheet according to claim 13 which contains at least one layer of ethylene-vinyl acetate. A protective sheet according to claim 13 or claim 14, wherein the protective sheet has an adhesive layer on the surface. 16. The protective sheet of claim 15 wherein the adhesive layer is composed of an acrylic resin composition. -34-
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WO2009001732A1 (en) 2008-12-31
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JPWO2009001732A1 (en) 2010-08-26
CN101681823B (en) 2012-05-23
CN101681823A (en) 2010-03-24
TWI469204B (en) 2015-01-11

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