JP6340004B2 - Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device - Google Patents

Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device Download PDF

Info

Publication number
JP6340004B2
JP6340004B2 JP2015529629A JP2015529629A JP6340004B2 JP 6340004 B2 JP6340004 B2 JP 6340004B2 JP 2015529629 A JP2015529629 A JP 2015529629A JP 2015529629 A JP2015529629 A JP 2015529629A JP 6340004 B2 JP6340004 B2 JP 6340004B2
Authority
JP
Japan
Prior art keywords
adhesive
group
acrylic polymer
molecular weight
adhesive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015529629A
Other languages
Japanese (ja)
Other versions
JPWO2015016352A6 (en
JPWO2015016352A1 (en
Inventor
さやか 土山
さやか 土山
市川 功
功 市川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
Original Assignee
Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Publication of JPWO2015016352A6 publication Critical patent/JPWO2015016352A6/en
Publication of JPWO2015016352A1 publication Critical patent/JPWO2015016352A1/en
Application granted granted Critical
Publication of JP6340004B2 publication Critical patent/JP6340004B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062Copolymers with monomers not covered by C09J133/06
    • C09J133/066Copolymers with monomers not covered by C09J133/06 containing -OH groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72Polyisocyanates or polyisothiocyanates
    • C08G18/80Masked polyisocyanates
    • C08G18/8003Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen
    • C08G18/8006Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen with compounds of C08G18/32
    • C08G18/8009Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen with compounds of C08G18/32 with compounds of C08G18/3203
    • C08G18/8022Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen with compounds of C08G18/32 with compounds of C08G18/3203 with polyols having at least three hydroxy groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04Homopolymers or copolymers of esters
    • C08L33/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J175/00Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04Polyurethanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • C09J7/381Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385Acrylic polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • H01L21/187Joining of semiconductor bodies for junction formation by direct bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/20Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2170/00Compositions for adhesives
    • C08G2170/40Compositions for pressure-sensitive adhesives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00Presence of (meth)acrylic polymer
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00Presence of epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3512Cracking
    • H01L2924/35121Peeling or delaminating

Description

本発明は、半導体素子(半導体チップ)を有機基板やリードフレームにダイボンディングする工程およびシリコンウエハ等をダイシングし且つ半導体チップを有機基板やリードフレームにダイボンディングする工程で使用するのに特に適した接着剤組成物および該接着剤組成物からなる接着剤層を有する接着シートならびに該接着シートを用いた半導体装置の製造方法に関する。  The present invention is particularly suitable for use in a step of die bonding a semiconductor element (semiconductor chip) to an organic substrate or a lead frame and a step of dicing a silicon wafer or the like and die bonding a semiconductor chip to an organic substrate or a lead frame. The present invention relates to an adhesive composition, an adhesive sheet having an adhesive layer made of the adhesive composition, and a method of manufacturing a semiconductor device using the adhesive sheet.

シリコン、ガリウムヒ素などの半導体ウエハは大径の状態で製造され、このウエハは素子小片(半導体チップ)に切断分離(ダイシング)された後に次の工程であるマウント工程に移されている。この際、半導体ウエハは予め接着シートに貼着された状態でダイシング、洗浄、乾燥、エキスパンディング、ピックアップの各工程が加えられた後、次工程のボンディング工程に移送される。  A semiconductor wafer made of silicon, gallium arsenide or the like is manufactured in a large diameter state, and this wafer is cut and separated (diced) into element pieces (semiconductor chips) and then transferred to the next mounting step. At this time, the semiconductor wafer is subjected to dicing, cleaning, drying, expanding, and pick-up processes in a state where the semiconductor wafer is previously adhered to the adhesive sheet, and then transferred to the next bonding process.

これらの工程の中でピックアップ工程とボンディング工程のプロセスを簡略化するために、ウエハ固定機能とダイ接着機能とを同時に兼ね備えたダイシング・ダイボンディング用接着シートが種々提案されている(特許文献1等)。上記特許文献1に開示されている接着シートは、いわゆるダイレクトダイボンディングを可能にし、ダイ接着用接着剤の塗布工程を省略できるようになる。  In order to simplify the processes of the pick-up process and the bonding process among these processes, various dicing / die-bonding adhesive sheets having both a wafer fixing function and a die bonding function have been proposed (Patent Document 1, etc.) ). The adhesive sheet disclosed in Patent Document 1 enables so-called direct die bonding, and the application step of the die bonding adhesive can be omitted.

ところで、近年の半導体装置に対する要求物性は非常に厳しいものとなっている。例えば、電子部品の接続においては、パッケージ全体が半田融点以上の高温下に曝される表面実装法(リフロー)が行われている。さらに、近年では鉛を含まない半田への移行により、実装温度は260℃程度まで上昇している。このため、実装時に半導体パッケージ内部で発生する応力が従来よりも大きくなり、接着界面における剥離やパッケージクラックといった不具合を生じる可能性が高まっている。  By the way, the required physical properties of recent semiconductor devices have become very strict. For example, in the connection of electronic components, a surface mounting method (reflow) is performed in which the entire package is exposed to a high temperature equal to or higher than the solder melting point. Furthermore, in recent years, the mounting temperature has increased to about 260 ° C. due to the shift to lead-free solder. For this reason, the stress generated inside the semiconductor package at the time of mounting becomes larger than before, and there is a high possibility of causing problems such as peeling at the adhesive interface and package cracks.

特許文献1には、ダイシング後の接着剤層同士の癒着の防止を主眼とした重量平均分子量(Mw)が90万以上であり分子量分布(Mw/Mn)が7以下であるアクリル重合体、エポキシ系樹脂および熱硬化剤を含有することを特徴とする接着剤組成物が提案されている。  Patent Document 1 discloses an acrylic polymer and epoxy having a weight average molecular weight (Mw) of 900,000 or more and a molecular weight distribution (Mw / Mn) of 7 or less, mainly for preventing adhesion between adhesive layers after dicing. An adhesive composition characterized by containing an epoxy resin and a thermosetting agent has been proposed.

特許文献1: 特開2009−292888号公報Patent Document 1: Japanese Patent Application Laid-Open No. 2009-292888

本発明者らは、高いパッケージ信頼性を達成するという課題の解決手段としても、重合法の面からアクリル重合体の分子量分布を制御することに着目した。上記特許文献1の接着剤組成物は、重量平均分子量Mwを大きくすることで、相対的に低分子量成分の含有量を低減し、そのことにより低分子量成分に起因する接着剤の可塑化を防ぎ、接着剤層同士の癒着を防止している。しかし、特許文献1の実施例に開示される接着剤に用いられているアクリル重合体の分子量分布は4前後と比較的高いため、低分子量成分の含有量を十分に低減するためには重量平均分子量を100万以上の大きなものにせざるを得ない。  The present inventors paid attention to controlling the molecular weight distribution of the acrylic polymer from the viewpoint of the polymerization method as a means for solving the problem of achieving high package reliability. The adhesive composition of Patent Document 1 increases the weight average molecular weight Mw to relatively reduce the content of low molecular weight components, thereby preventing the plasticization of the adhesive due to the low molecular weight components. , Preventing adhesion between adhesive layers. However, since the molecular weight distribution of the acrylic polymer used in the adhesive disclosed in the examples of Patent Document 1 is relatively high, around 4, a weight average is necessary to sufficiently reduce the content of low molecular weight components. The molecular weight must be a large one of 1 million or more.

このようにアクリル重合体の重量平均分子量が高い場合、近年のより微細化したチップ表面の凹凸に追従せず、接着強度の低下要因となる懸念がある。また、重量平均分子量が高いアクリル系重合体を用いる必要があるため、接着剤の設計の自由度が狭められる。  Thus, when the weight average molecular weight of an acrylic polymer is high, there is a concern that it does not follow the recent unevenness of the chip surface, which is a cause of a decrease in adhesive strength. Further, since it is necessary to use an acrylic polymer having a high weight average molecular weight, the degree of freedom in designing the adhesive is narrowed.

本発明は、十分な接着強度で接合でき、特に半導体装置において高いパッケージ信頼性を達成できる接着剤組成物および該接着剤組成物からなる接着剤層を有する接着シートならびに該接着シートを用いた半導体装置の製造方法を提供することを目的としている。  The present invention relates to an adhesive composition that can be bonded with sufficient adhesive strength, and in particular, can achieve high package reliability in a semiconductor device, an adhesive sheet having an adhesive layer made of the adhesive composition, and a semiconductor using the adhesive sheet It is an object of the present invention to provide a device manufacturing method.

上記課題を解決する本発明は、以下の要旨を含む。  The present invention for solving the above problems includes the following gist.

(1)有機テルル含有化合物を重合開始剤として用いるリビングラジカル重合法により、アクリル系モノマーを重合して得られる重量平均分子量(Mw)が35万以上のアクリル重合体(A)、エポキシ系熱硬化性樹脂(B)および熱硬化剤(C)を含む接着剤組成物。(1) Acrylic polymer (A) having a weight average molecular weight (Mw) of 350,000 or more obtained by polymerizing an acrylic monomer by a living radical polymerization method using an organic tellurium-containing compound as a polymerization initiator, epoxy thermosetting Adhesive composition containing an adhesive resin (B) and a thermosetting agent (C).

(2)さらに架橋剤(D)を含有し、アクリル重合体(A)が該架橋剤と反応する官能基を有する(1)に記載の接着剤組成物。(2) The adhesive composition according to (1), further comprising a crosslinking agent (D), wherein the acrylic polymer (A) has a functional group that reacts with the crosslinking agent.

(3)架橋剤(D)がイソシネート基を含有し、アクリル重合体(A)が水酸基を含有する(2)に記載の接着剤組成物。(3) The adhesive composition according to (2), wherein the crosslinking agent (D) contains an isocyanate group and the acrylic polymer (A) contains a hydroxyl group.

(4)アクリル重合体(A)の重量平均分子量(Mw)が90万以下である(1)〜(3)の何れかに記載の接着剤組成物。(4) The adhesive composition according to any one of (1) to (3), wherein the acrylic polymer (A) has a weight average molecular weight (Mw) of 900,000 or less.

(5)アクリル重合体(A)の分子量分布(Mw/Mn)が3以下である(1)〜(4)の何れかに記載の接着剤組成物。(5) The adhesive composition according to any one of (1) to (4), wherein the acrylic polymer (A) has a molecular weight distribution (Mw / Mn) of 3 or less.

(6)上記(1)〜(5)の何れかに記載の接着剤組成物からなる単層接着フィルム。(6) A single layer adhesive film comprising the adhesive composition according to any one of (1) to (5) above.

(7)上記(1)〜(5)の何れかに記載の接着剤組成物からなる接着剤層が、支持体上に形成されてなる接着シート。(7) An adhesive sheet in which an adhesive layer made of the adhesive composition according to any one of (1) to (5) is formed on a support.

(8)上記(7)に記載の接着シートの接着剤層に半導体ウエハを貼付し、前記半導体ウエハをダイシングして半導体チップとし、前記半導体チップに接着剤層を固着残存させて支持体から剥離し、前記半導体チップをダイパッド部上または他の半導体チップ上に前記接着剤層を介して接着する工程を含む半導体装置の製造方法。(8) A semiconductor wafer is affixed to the adhesive layer of the adhesive sheet described in (7) above, and the semiconductor wafer is diced to form a semiconductor chip, and the adhesive layer remains fixed on the semiconductor chip and is peeled off from the support. And a method of manufacturing a semiconductor device, comprising: adhering the semiconductor chip onto a die pad portion or another semiconductor chip via the adhesive layer.

半導体チップを固定する際に、本発明に係る接着シートを用いることで、十分な接着強度で接合することができ、過酷な環境下においても、高いパッケージ信頼性を示す半導体装置を得ることができる。  When fixing the semiconductor chip, by using the adhesive sheet according to the present invention, it is possible to bond with sufficient adhesive strength and to obtain a semiconductor device exhibiting high package reliability even under harsh environments. .

以下、本発明の接着剤組成物、接着シートおよび該シートを用いた半導体装置の製造方法についてさらに具体的に説明する。  Hereinafter, the adhesive composition of the present invention, the adhesive sheet, and a method for producing a semiconductor device using the sheet will be described more specifically.

(接着剤組成物)
本発明に係る接着剤組成物は、アクリル重合体(A)(以下「(A)成分」とも言う。他の成分についても同様である。)、エポキシ系樹脂(B)(以下「化合物(B)」または「(B)成分」とも言う。)、熱硬化剤(C)を必須成分として含み、各種物性を改良するため、必要に応じ他の成分を含んでいても良い。以下、これら各成分について具体的に説明する。
(Adhesive composition)
The adhesive composition according to the present invention is an acrylic polymer (A) (hereinafter also referred to as “component (A)”. The same applies to other components), an epoxy resin (B) (hereinafter referred to as “compound (B)”. ) "Or" component (B) "), the thermosetting agent (C) is included as an essential component, and other components may be included as necessary in order to improve various physical properties. Hereinafter, each of these components will be described in detail.

(A)アクリル重合体
アクリル重合体(A)の重量平均分子量(Mw)は35万以上であり、好ましくは200万未満であり、より好ましくは40万〜180万であり、さらに好ましくは60万〜150万であり、特に好ましくは60万〜90万である。アクリル重合体の重量平均分子量が低過ぎると、接着剤層の低分子量成分の流動性に起因して、パッケージ信頼性を損なうことがある。また、アクリル重合体の重量平均分子量が高過ぎると基板やチップ表面の凹凸へ接着剤層が追従できないことがありボイドなどの発生要因になる。アクリル重合体の重量平均分子量を上記範囲とすることで、アクリル重合体は適度な柔軟性を有し、表面平滑性が高い被着体表面に対する接着剤層の貼付性が向上して、チップと基板、あるいはチップとチップとを強固に接着することができる。また、低分子量成分に起因するパッケージ信頼性の低下を防止できる。さらに、本発明のアクリル重合体(A)は、後述するとおり分子量分布を小さくすることで、重量平均分子量を過大な範囲とすることなく、低分子量成分の含有量を十分に低減することができる。
(A) Acrylic polymer The acrylic polymer (A) has a weight average molecular weight (Mw) of 350,000 or more, preferably less than 2,000,000, more preferably 400,000 to 1,800,000, and even more preferably 600,000. ˜1.5 million, particularly preferably 600,000 to 900,000. If the weight average molecular weight of the acrylic polymer is too low, package reliability may be impaired due to the fluidity of the low molecular weight component of the adhesive layer. On the other hand, if the weight average molecular weight of the acrylic polymer is too high, the adhesive layer may not be able to follow the irregularities on the substrate or chip surface, which causes generation of voids. By setting the weight average molecular weight of the acrylic polymer within the above range, the acrylic polymer has appropriate flexibility, the adhesiveness of the adhesive layer to the adherend surface having high surface smoothness is improved, and the chip and The substrate or the chip and the chip can be firmly bonded. In addition, it is possible to prevent a decrease in package reliability due to low molecular weight components. Furthermore, the acrylic polymer (A) of the present invention can sufficiently reduce the content of the low molecular weight component without reducing the weight average molecular weight by reducing the molecular weight distribution as described later. .

アクリル重合体(A)の分子量分布(Mw/Mn)は3以下であることが好ましく、より好ましくは2以下であり、さらに好ましくは1.7以下であり、特に好ましくは1.5以下である。分子量分布が3以下であるアクリル重合体は、重量平均分子量が高くても、分子量分布が狭いことから、流動性の高い低分子量成分の含有量が少なく、この低分子量成分がパッケージ信頼性の低下させることを回避できる傾向がある。分子量分布の下限値は、各成分の相溶性という観点からは1.2程度である。  The molecular weight distribution (Mw / Mn) of the acrylic polymer (A) is preferably 3 or less, more preferably 2 or less, still more preferably 1.7 or less, and particularly preferably 1.5 or less. . Acrylic polymers with a molecular weight distribution of 3 or less have a narrow molecular weight distribution even if the weight average molecular weight is high, so the content of low molecular weight components with high fluidity is low, and this low molecular weight component reduces the package reliability. There is a tendency that can be avoided. The lower limit of the molecular weight distribution is about 1.2 from the viewpoint of compatibility of each component.

なお、アクリル重合体(A)の重量平均分子量(Mw)、数平均分子量(Mn)および分子量分布(Mw/Mn)の値は、ゲル・パーミエーション・クロマトグラフィー法(GPC)法(ポリスチレン標準)により、後述する実施例での測定条件下で測定される場合の値である。また、後述する架橋剤(D)を用いる場合、アクリル重合体(A)の重量平均分子量(Mw)、数平均分子量(Mn)および分子量分布(Mw/Mn)は、架橋剤(D)との反応前の値である。  The weight average molecular weight (Mw), number average molecular weight (Mn) and molecular weight distribution (Mw / Mn) values of the acrylic polymer (A) are gel permeation chromatography (GPC) method (polystyrene standard). Therefore, it is a value when measured under the measurement conditions in the examples described later. Moreover, when using the crosslinking agent (D) mentioned later, the weight average molecular weight (Mw), number average molecular weight (Mn), and molecular weight distribution (Mw / Mn) of the acrylic polymer (A) are the same as those of the crosslinking agent (D). It is the value before the reaction.

アクリル重合体のガラス転移温度(Tg)は、好ましくは−10℃以上50℃以下、さらに好ましくは0℃以上40℃以下、特に好ましくは0℃以上30℃以下の範囲にある。ガラス転移温度が低過ぎると接着剤層と支持体との剥離力が大きくなってチップのピックアップ不良が起こることがあり、高過ぎるとウエハを固定するための接着剤層の接着力が不十分となるおそれがある。  The glass transition temperature (Tg) of the acrylic polymer is preferably in the range of −10 ° C. to 50 ° C., more preferably 0 ° C. to 40 ° C., and particularly preferably 0 ° C. to 30 ° C. If the glass transition temperature is too low, the peeling force between the adhesive layer and the support may increase and chip pickup failure may occur. If the glass transition temperature is too high, the adhesive force of the adhesive layer for fixing the wafer is insufficient. There is a risk.

このアクリル重合体(A)を構成するモノマーとしては、少なくとも(メタ)アクリル酸エステルモノマーあるいはその誘導体が含まれる。(メタ)アクリル酸エステルモノマーあるいはその誘導体としては、アルキル基の炭素数が1〜18である(メタ)アクリル酸アルキルエステル、例えば(メタ)アクリル酸メチル、(メタ)アクリル酸エチル、(メタ)アクリル酸プロピル、(メタ)アクリル酸ブチル等が挙げられ、環状骨格を有する(メタ)アクリル酸エステル、例えば(メタ)アクリル酸シクロアルキルエステル、(メタ)アクリル酸ベンジルエステル、イソボルニルアクリレート、ジシクロペンタニルアクリレート、ジシクロペンテニルアクリレート、ジシクロペンテニルオキシエチルアクリレート、イミドアクリレート等が挙げられ、水酸基を有するアクリル酸エステル、例えば2-ヒドロキシエチル(メタ)アクリレート、2-ヒドロキシプロピル(メタ)アクリレート、2-ヒドロキシブチル(メタ)アクリレート等が挙げられ、グリシジル基を有する(メタ)アクリル酸エステル、例えばグリシジル(メタ)アクリレートが挙げられ、アミノ基を有する(メタ)アクリル酸エステル、例えばモノエチルアミノ(メタ)アクリレート、ジエチルアミノ(メタ)アクリレート等が挙げられる。アクリル重合体(A)には、このほか、(メタ)アクリル酸、イタコン酸等のカルボキシル基を有するモノマー、ビニルアルコール、N−メチロール(メタ)アクリルアミド等の(メタ)アクリル酸エステル以外の水酸基を有するモノマー、(メタ)アクリルアミド、酢酸ビニル、アクリロニトリル、スチレン等が共重合されていてもよい。  The monomer constituting the acrylic polymer (A) includes at least a (meth) acrylic acid ester monomer or a derivative thereof. (Meth) acrylic acid ester monomers or derivatives thereof include (meth) acrylic acid alkyl esters having an alkyl group having 1 to 18 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, (meth) Examples thereof include propyl acrylate, butyl (meth) acrylate and the like, and (meth) acrylic acid esters having a cyclic skeleton, such as (meth) acrylic acid cycloalkyl ester, (meth) acrylic acid benzyl ester, isobornyl acrylate, di And cyclopentanyl acrylate, dicyclopentenyl acrylate, dicyclopentenyloxyethyl acrylate, imide acrylate, etc., and acrylic acid ester having a hydroxyl group, such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate and the like, (meth) acrylic acid ester having a glycidyl group, such as glycidyl (meth) acrylate, and (meth) acrylic acid ester having an amino group, such as monoethylamino ( And (meth) acrylate and diethylamino (meth) acrylate. In addition, the acrylic polymer (A) has a hydroxyl group other than a (meth) acrylic acid ester such as a monomer having a carboxyl group such as (meth) acrylic acid or itaconic acid, vinyl alcohol, or N-methylol (meth) acrylamide. Monomers having (meth) acrylamide, vinyl acetate, acrylonitrile, styrene, and the like may be copolymerized.

接着剤組成物が後述する架橋剤(D)を含有する場合には、アクリル重合体は水酸基、アミノ基、カルボキシル基等の架橋剤(D)と反応する官能基を有することが好ましく、アクリル重合体(A)を構成するモノマーとして上述の水酸基を有するアクリル酸エステル、モノエチルアミノ(メタ)アクリレート、(メタ)アクリル酸等を選択することでアクリル重合体に架橋剤(D)と反応する官能基を導入することができる。特に水酸基を有しているアクリル重合体(A)が、水酸基をアクリル重合体(A)に導入することが容易であり、エポキシ系樹脂(B)との相溶性が良く、また架橋剤を用いて架橋構造を導入することが容易になるため好ましい。また複数種のアクリル重合体を組み合わせて用いてもよい。  When the adhesive composition contains a crosslinking agent (D) described later, the acrylic polymer preferably has a functional group that reacts with the crosslinking agent (D) such as a hydroxyl group, an amino group, or a carboxyl group. Functionality that reacts with the crosslinking agent (D) on the acrylic polymer by selecting the above-mentioned acrylic acid ester having a hydroxyl group, monoethylamino (meth) acrylate, (meth) acrylic acid, etc. as the monomer constituting the coalescence (A) Groups can be introduced. In particular, the acrylic polymer (A) having a hydroxyl group is easy to introduce a hydroxyl group into the acrylic polymer (A), has good compatibility with the epoxy resin (B), and uses a crosslinking agent. Therefore, it is preferable because a cross-linked structure can be easily introduced. A plurality of types of acrylic polymers may be used in combination.

アクリル重合体(A)を構成するモノマーとして、架橋剤(D)と反応する官能基を有するモノマーを用いることによりアクリル重合体(A)に架橋剤(D)と反応する官能基を導入する場合、架橋剤(D)と反応する官能基を有するモノマーの質量の、アクリル重合体(A)を構成するモノマー全質量中の割合は1〜20質量%程度が好ましく、3〜15質量%であることがより好ましい。  When a functional group that reacts with the crosslinking agent (D) is introduced into the acrylic polymer (A) by using a monomer having a functional group that reacts with the crosslinking agent (D) as a monomer constituting the acrylic polymer (A). The ratio of the mass of the monomer having a functional group that reacts with the crosslinking agent (D) to the total mass of the monomer constituting the acrylic polymer (A) is preferably about 1 to 20% by mass, and 3 to 15% by mass. It is more preferable.

上記のようなアクリル重合体(A)は、前記アクリル系モノマーを重合開始剤として有機テルル化合物を用いるリビングラジカル重合する方法(以下、「TERP重合法」と記載することがある)により得られるものである。リビングラジカル重合法を採用することにより、アクリル重合体(A)の分子量分布(Mw/Mn)を調整することが容易となり、本発明の接着剤組成物を用いた半導体装置の信頼性を向上させることができる。また、TERP重合法を採用することにより、分子量の制御性が向上する。特に、高分子量の重合体を得ることに適している。  The acrylic polymer (A) as described above is obtained by a method of living radical polymerization using an organic tellurium compound with the acrylic monomer as a polymerization initiator (hereinafter sometimes referred to as “TERP polymerization method”). It is. By adopting the living radical polymerization method, it becomes easy to adjust the molecular weight distribution (Mw / Mn) of the acrylic polymer (A), and the reliability of the semiconductor device using the adhesive composition of the present invention is improved. be able to. Moreover, the controllability of the molecular weight is improved by adopting the TERP polymerization method. It is particularly suitable for obtaining a high molecular weight polymer.

このようなリビングラジカル重合開始剤としての、テルル含有化合物としては下記のものが好ましく用いられる。

Figure 0006340004
[式中、R1は、炭素数1〜8のアルキル基、アリール基、置換アリール基又は芳香族ヘテロ環基を示す。R2及びR3は、水素原子又は炭素数1〜8のアルキル基を示す。R4は、アリール基、置換アリール基、芳香族ヘテロ環基、アシル基、オキシカルボニル基又はシアノ基を示す。] As the tellurium-containing compound as such a living radical polymerization initiator, the following compounds are preferably used.
Figure 0006340004
[Wherein, R 1 represents an alkyl group having 1 to 8 carbon atoms, an aryl group, a substituted aryl group or an aromatic heterocyclic group. R 2 and R 3 represent a hydrogen atom or an alkyl group having 1 to 8 carbon atoms. R 4 represents an aryl group, a substituted aryl group, an aromatic heterocyclic group, an acyl group, an oxycarbonyl group or a cyano group. ]

1で示される基は、具体的には次の通りである。炭素数1〜8のアルキル基としては、メチル基、エチル基、n−プロピル基、イソプロピル基、シクロプロピル基、n−ブチル基、sec−ブチル基、tert−ブチル基、シクロブチル基、n−ペンチル基、n−ヘキシル基、n−ヘプチル基、n−オクチル基等の炭素数1〜8の直鎖状、分岐鎖状又は環状のアルキル基を挙げることができる。好ましいアルキル基としては、炭素数1〜4の直鎖状又は分岐鎖状のアルキル基、より好ましくはメチル基又はエチル基が良い。Specific examples of the group represented by R 1 are as follows. Examples of the alkyl group having 1 to 8 carbon atoms include methyl group, ethyl group, n-propyl group, isopropyl group, cyclopropyl group, n-butyl group, sec-butyl group, tert-butyl group, cyclobutyl group, and n-pentyl. Examples thereof include linear, branched or cyclic alkyl groups having 1 to 8 carbon atoms such as a group, n-hexyl group, n-heptyl group and n-octyl group. A preferable alkyl group is a linear or branched alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group.

アリール基としては、フェニル基、ナフチル基等、置換アリール基としては置換基を有しているフェニル基、置換基を有しているナフチル基等、芳香族へテロ環基としてはピリジル基、フリル基、チエニル基等を挙げることができる。上記置換基を有しているアリール基の置換基としては、例えば、ハロゲン原子、水酸基、アルコキシ基、アミノ基、ニトロ基、シアノ基、−COR5で示されるカルボニル含有基(R5=炭素数1〜8のアルキル基、アリール基、炭素数1〜8のアルコキシ基、アリーロキシ基)、スルホニル基、トリフルオロメチル基等を挙げることができる。好ましいアリール基としては、フェニル基、トリフルオロメチル置換フェニル基が良い。また、これら置換基は、1個又は2個置換しているのが良く、パラ位若しくはオルト位が好ましい。As the aryl group, a phenyl group, a naphthyl group, etc., as a substituted aryl group, a phenyl group having a substituent, a naphthyl group having a substituent, etc., as an aromatic heterocyclic group, a pyridyl group, furyl Group, thienyl group and the like. Examples of the substituent of the aryl group having the above substituent include a halogen atom, a hydroxyl group, an alkoxy group, an amino group, a nitro group, a cyano group, and a carbonyl-containing group represented by —COR 5 (R 5 = carbon number). 1-8 alkyl groups, aryl groups, C1-C8 alkoxy groups, aryloxy groups), sulfonyl groups, trifluoromethyl groups, and the like. Preferred aryl groups are a phenyl group and a trifluoromethyl-substituted phenyl group. These substituents may be substituted one or two, and the para position or ortho position is preferable.

2及びR3で示される各基は、具体的には次の通りである。炭素数1〜8のアルキル基としては、上記R1で示したアルキル基と同様のものを挙げることができる。Each group represented by R 2 and R 3 is specifically as follows. Examples of the alkyl group having 1 to 8 carbon atoms include the same alkyl groups as those described above for R 1 .

4で示される各基は、具体的には次の通りである。アリール基、置換アリール基、芳香族へテロ環基としては上記R1で示した基と同様のものを挙げることができる。アシル基としては、ホルミル基、アセチル基、ベンゾイル基等を挙げることができる。オキシカルボニル基としては、−COOR6(R6=H、炭素数1〜8のアルキル基、アリール基)で示される基が好ましく、例えばカルボキシル基、メトキシカルボニル基、エトキシカルボニル基、プロポキシカルボニル基、n−ブトキシカルボニル基、sec−ブトキシカルボニル基、tert−ブトキシカルボニル基、n−ペントキシカルボニル基、フェノキシカルボニル基等を挙げることができる。好ましいオキシカルボニル基としては、メトキシカルボニル基、エトキシカルボニル基が良い。Each group represented by R 4 is specifically as follows. Examples of the aryl group, substituted aryl group, and aromatic heterocyclic group include the same groups as those described above for R 1 . Examples of the acyl group include a formyl group, an acetyl group, and a benzoyl group. As the oxycarbonyl group, a group represented by —COOR 6 (R 6 ═H, alkyl group having 1 to 8 carbon atoms, aryl group) is preferable, and examples thereof include a carboxyl group, a methoxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, Examples thereof include an n-butoxycarbonyl group, a sec-butoxycarbonyl group, a tert-butoxycarbonyl group, an n-pentoxycarbonyl group, and a phenoxycarbonyl group. Preferred oxycarbonyl groups are a methoxycarbonyl group and an ethoxycarbonyl group.

4で示される各基としては、アリール基、置換アリール基、オキシカルボニル基が良い。好ましいアリール基としては、フェニル基が良い。好ましい置換アリール基としては、ハロゲン原子置換フェニル基、トリフルオロメチル置換フェニル基が良い。また、これら置換基は、ハロゲン原子の場合は、1〜5個置換しているのが良い。アルコキシ基やトリフルオロメチル基の場合は、1個又は2個置換しているのが良く、1個置換の場合は、パラ位若しくはオルト位が好ましく、2個置換の場合は、メタ位が好ましい。好ましいオキシカルボニル基としては、メトキシカルボニル基、エトキシカルボニル基が良い。Each group represented by R 4 is preferably an aryl group, a substituted aryl group, or an oxycarbonyl group. A preferred aryl group is a phenyl group. Preferred examples of the substituted aryl group include a halogen atom substituted phenyl group and a trifluoromethyl substituted phenyl group. In addition, in the case of a halogen atom, these substituents are preferably substituted by 1-5. In the case of an alkoxy group or a trifluoromethyl group, one or two substituents may be substituted. In the case of one substitution, the para position or the ortho position is preferable, and in the case of two substitutions, the meta position is preferable. . Preferred oxycarbonyl groups are a methoxycarbonyl group and an ethoxycarbonyl group.

好ましい一般式(1)で示されるテルル含有化合物としては、R1が、炭素数1〜4のアルキル基を示し、R2及びR3が、水素原子又は炭素数1〜4のアルキル基を示し、R4が、アリール基、置換アリール基、オキシカルボニル基で示される化合物が良い。特に好ましくは、R1が、炭素数1〜4のアルキル基を示し、R2及びR3が、水素原子又は炭素数1〜4のアルキル基を示し、R4が、フェニル基、置換フェニル基、メトキシカルボニル基、エトキシカルボニル基が良い。As the tellurium-containing compound represented by the general formula (1), R 1 represents an alkyl group having 1 to 4 carbon atoms, R 2 and R 3 represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. , R 4 is preferably an aryl group, a substituted aryl group or an oxycarbonyl group. Particularly preferably, R 1 represents an alkyl group having 1 to 4 carbon atoms, R 2 and R 3 represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 4 represents a phenyl group or a substituted phenyl group. A methoxycarbonyl group and an ethoxycarbonyl group are preferable.

一般式(1)で示されるテルル含有化合物は、具体的には次の通りである。テルル含有化合物としては、(メチルテラニル−メチル)ベンゼン、(1−メチルテラニル−エチル)ベンゼン、(2−メチルテラニル−プロピル)ベンゼン、1−クロロ−4−(メチルテラニル−メチル)ベンゼン、1−ヒドロキシ−4−(メチルテラニル−メチル)ベンゼン、1−メトキシ−4−(メチルテラニル−メチル)ベンゼン、1−アミノ−4−(メチルテラニル−メチル)ベンゼン、1−ニトロ−4−(メチルテラニル−メチル)ベンゼン、1−シアノ−4−(メチルテラニル−メチル)ベンゼン、1−メチルカルボニル−4−(メチルテラニル−メチル)ベンゼン、1−フェニルカルボニル−4−(メチルテラニル−メチル)ベンゼン、1−メトキシカルボニル−4−(メチルテラニル−メチル)ベンゼン、1−フェノキシカルボニル−4−(メチルテラニル−メチル)ベンゼン、1−スルホニル−4−(メチルテラニル−メチル)ベンゼン、1−トリフルオロメチル−4−(メチルテラニル−メチル)ベンゼン、1−クロロ−4−(1−メチルテラニル−エチル)ベンゼン、1−ヒドロキシ−4−(1−メチルテラニル−エチル)ベンゼン、1−メトキシ−4−(1−メチルテラニル−エチル)ベンゼン、1−アミノ−4−(1−メチルテラニル−エチル)ベンゼン、1−ニトロ−4−(1−メチルテラニル−エチル)ベンゼン、1−シアノ−4−(1−メチルテラニル−エチル)ベンゼン、1−メチルカルボニル−4−(1−メチルテラニル−エチル)ベンゼン、1−フェニルカルボニル−4−(1−メチルテラニル−エチル)ベンゼン、1−メトキシカルボニル−4−(1−メチルテラニル−エチル)ベンゼン、1−フェノキシカルボニル−4−(1−メチルテラニル−エチル)ベンゼン、1−スルホニル−4−(1−メチルテラニル−エチル)ベンゼン、1−トリフルオロメチル−4−(1−メチルテラニル−エチル)ベンゼン[1−(1−メチルテラニル−エチル)−4−トリフルオロメチルベンゼン]、1−(1−メチルテラニル−エチル)−3,5−ビス−トリフルオロメチルベンゼン、1,2,3,4,5−ペンタフルオロ−6−(1−メチルテラニル−エチル)ベンゼン、1−クロロ−4−(2−メチルテラニル−プロピル)ベンゼン、1−ヒドロキシ−4−(2−メチルテラニル−プロピル)ベンゼン、1−メトキシ−4−(2−メチルテラニル−プロピル)ベンゼン、1−アミノ−4−(2−メチルテラニル−プロピル)ベンゼン、1−ニトロ−4−(2−メチルテラニル−プロピル)ベンゼン、1−シアノ−4−(2−メチルテラニル−プロピル)ベンゼン、1−メチルカルボニル−4−(2−メチルテラニル−プロピル)ベンゼン、1−フェニルカルボニル−4−(2−メチルテラニル−プロピル)ベンゼン、1−メトキシカルボニル−4−(2−メチルテラニル−プロピル)ベンゼン、1−フェノキシカルボニル−4−(2−メチルテラニル−プロピル)ベンゼン、1−スルホニル−4−(2−メチルテラニル−プロピル)ベンゼン、1−トリフルオロメチル−4−(2−メチルテラニル−プロピル)ベンゼン、2−(メチルテラニル−メチル)ピリジン、2−(1−メチルテラニル−エチル)ピリジン、2−(2−メチルテラニル−プロピル)ピリジン、2−メチル−2−メチルテラニル−プロパナール、3−メチル−3−メチルテラニル−2−ブタノン、2−メチルテラニル−エタン酸メチル、2−メチルテラニル−プロピオン酸メチル、2−メチルテラニル−2−メチルプロピオン酸メチル、2−メチルテラニル−エタン酸エチル、2−メチルテラニル−プロピオン酸エチル、2−メチルテラニル−2−メチルプロピオン酸エチル[エチル−2−メチル−2−メチルテラニル−プロピオネート]、2−(n−ブチルテラニル)−2−メチルプロピオン酸エチル[エチル−2−メチル−2−n−ブチルテラニル−プロピオネート]、2−メチルテラニルアセトニトリル、2−メチルテラニルプロピオニトリル、2−メチル−2−メチルテラニルプロピオニトリル、(フェニルテラニル−メチル)ベンゼン、(1−フェニルテラニル−エチル)ベンゼン、(2−フェニルテラニル−プロピル)ベンゼン等を挙げることができる。  The tellurium-containing compound represented by the general formula (1) is specifically as follows. Examples of tellurium-containing compounds include (methylterranyl-methyl) benzene, (1-methylterranyl-ethyl) benzene, (2-methylterranyl-propyl) benzene, 1-chloro-4- (methylterranyl-methyl) benzene, 1-hydroxy-4- (Methylterranyl-methyl) benzene, 1-methoxy-4- (methylterranyl-methyl) benzene, 1-amino-4- (methylterranyl-methyl) benzene, 1-nitro-4- (methylterranyl-methyl) benzene, 1-cyano- 4- (methylterranyl-methyl) benzene, 1-methylcarbonyl-4- (methylterranyl-methyl) benzene, 1-phenylcarbonyl-4- (methylterranyl-methyl) benzene, 1-methoxycarbonyl-4- (methylterranyl-methyl) benzene 1-phenoxycarbonyl-4- (methylterranyl- Methyl) benzene, 1-sulfonyl-4- (methylterranyl-methyl) benzene, 1-trifluoromethyl-4- (methylterranyl-methyl) benzene, 1-chloro-4- (1-methylterranyl-ethyl) benzene, 1-hydroxy -4- (1-methylteranyl-ethyl) benzene, 1-methoxy-4- (1-methylterranyl-ethyl) benzene, 1-amino-4- (1-methylterranyl-ethyl) benzene, 1-nitro-4- (1 -Methyl terranyl-ethyl) benzene, 1-cyano-4- (1-methyl teranyl-ethyl) benzene, 1-methylcarbonyl-4- (1-methyl teranyl-ethyl) benzene, 1-phenylcarbonyl-4- (1-methyl terranyl- Ethyl) benzene, 1-methoxycarbonyl-4- (1-methylterranyl-ethyl) benzene, 1-phenoxy Rubonyl-4- (1-methylterranyl-ethyl) benzene, 1-sulfonyl-4- (1-methylterranyl-ethyl) benzene, 1-trifluoromethyl-4- (1-methylterranyl-ethyl) benzene [1- (1- Methylteranyl-ethyl) -4-trifluoromethylbenzene], 1- (1-methylterranyl-ethyl) -3,5-bis-trifluoromethylbenzene, 1,2,3,4,5-pentafluoro-6- ( 1-methylterranyl-ethyl) benzene, 1-chloro-4- (2-methylterranyl-propyl) benzene, 1-hydroxy-4- (2-methylterranyl-propyl) benzene, 1-methoxy-4- (2-methylterranyl-propyl) ) Benzene, 1-amino-4- (2-methylterranyl-propyl) benzene, 1-nitro-4- (2-methylterranyl-propyl) benzene 1-cyano-4- (2-methylterranyl-propyl) benzene, 1-methylcarbonyl-4- (2-methylterranyl-propyl) benzene, 1-phenylcarbonyl-4- (2-methylterranyl-propyl) benzene, 1-methoxy Carbonyl-4- (2-methylterranyl-propyl) benzene, 1-phenoxycarbonyl-4- (2-methylterranyl-propyl) benzene, 1-sulfonyl-4- (2-methylterranyl-propyl) benzene, 1-trifluoromethyl- 4- (2-methylterranyl-propyl) benzene, 2- (methylterranyl-methyl) pyridine, 2- (1-methylterranyl-ethyl) pyridine, 2- (2-methylterranyl-propyl) pyridine, 2-methyl-2-methylterranyl- Propanal, 3-methyl-3-methylteranyl-2-butanone, 2-methyl terranyl-methyl ethanoate, 2-methyl teranyl-methyl propionate, 2-methyl teranyl-2-methyl propionate, 2-methyl teranyl-ethyl ethanoate, 2-methyl terranyl-ethyl propionate, 2-methyl teranyl-2-methyl Ethyl propionate [ethyl-2-methyl-2-methylterranyl-propionate], 2- (n-butylterranyl) -2-methylpropionate [ethyl-2-methyl-2-n-butylterranyl-propionate], 2-methyl Terranylacetonitrile, 2-methylterranylpropionitrile, 2-methyl-2-methylterranylpropionitrile, (phenylterranyl-methyl) benzene, (1-phenylterranyl-ethyl) benzene, (2-phenyl) Terranyl-propyl) benzene etc. Can.

また上記において、メチルテラニル、1−メチルテラニル、2−メチルテラニルの部分がそれぞれエチルテラニル、1−エチルテラニル、2−エチルテラニル、ブチルテラニル、1−ブチルテラニル、2−ブチルテラニルと変更した化合物も全て含まれる。好ましくは、(メチルテラニル−メチル)ベンゼン、(1−メチルテラニル−エチル)ベンゼン、(2−メチルテラニル−プロピル)ベンゼン、1−クロロ−4−(1−メチルテラニル−エチル)ベンゼン、1−トリフルオロメチル−4−(1−メチルテラニル−エチル)ベンゼン[1−(1−メチルテラニル−エチル)−4−トリフルオロメチルベンゼン]、2−メチルテラニル−2−メチルプロピオン酸メチル、2−メチルテラニル−2−メチルプロピオン酸エチル[エチル−2−メチル−2−メチルテラニル−プロピオネート]、2−(n−ブチルテラニル)−2−メチルプロピオン酸エチル[エチル−2−メチル−2−n−ブチルテラニル−プロピオネート]、1−(1−メチルテラニル−エチル)−3,5−ビス−トリフルオロメチルベンゼン、1,2,3,4,5−ペンタフルオロ−6−(1−メチルテラニル−エチル)ベンゼン、2−メチルテラニルプロピオニトリル、2−メチル−2−メチルテラニルプロピオニトリル、(エチルテラニル−メチル)ベンゼン、(1−エチルテラニル−エチル)ベンゼン、(2−エチルテラニル−プロピル)ベンゼン、2−エチルテラニル−2−メチルプロピオン酸メチル、2−エチルテラニル−2−メチルプロピオン酸エチル、2−エチルテラニルプロピオニトリル、2−メチル−2−エチルテラニルプロピオニトリル、(n−ブチルテラニル−メチル)ベンゼン、(1−n−ブチルテラニル−エチル)ベンゼン、(2−n−ブチルテラニル−プロピル)ベンゼン、2−n−ブチルテラニル−2−メチルプロピオン酸メチル、2−n−ブチルテラニル−2−メチルプロピオン酸エチル、2−n−ブチルテラニルプロピオニトリル、2−メチル−2−n−ブチルテラニルプロピオニトリルが良い。  Further, in the above, all compounds in which methyl teranyl, 1-methyl terranyl and 2-methyl terranyl are changed to ethyl teranyl, 1-ethyl teranyl, 2-ethyl terranyl, butyl terranyl, 1-butyl terranyl and 2-butyl terranyl, respectively, are included. Preferably, (methylterranyl-methyl) benzene, (1-methylterranyl-ethyl) benzene, (2-methylterranyl-propyl) benzene, 1-chloro-4- (1-methylterranyl-ethyl) benzene, 1-trifluoromethyl-4 -(1-methylteranyl-ethyl) benzene [1- (1-methylterranyl-ethyl) -4-trifluoromethylbenzene], methyl 2-methylterranyl-2-methylpropionate, ethyl 2-methylterranyl-2-methylpropionate [ Ethyl-2-methyl-2-methylterranyl-propionate], 2- (n-butylterranyl) -2-methylpropionate [ethyl-2-methyl-2-n-butylterranyl-propionate], 1- (1-methylterranyl- Ethyl) -3,5-bis-trifluoromethylbenzene, 1,2,3,4,5-pe Tafluoro-6- (1-methylterranyl-ethyl) benzene, 2-methylterranylpropionitrile, 2-methyl-2-methylterranylpropionitrile, (ethylterranyl-methyl) benzene, (1-ethylterranyl-ethyl) benzene , (2-ethylteranyl-propyl) benzene, methyl 2-ethylteranyl-2-methylpropionate, ethyl 2-ethylteranyl-2-methylpropionate, 2-ethylterranylpropionitrile, 2-methyl-2-ethylterranyl Propionitrile, (n-butylteranyl-methyl) benzene, (1-n-butylteranyl-ethyl) benzene, (2-n-butylteranyl-propyl) benzene, 2-n-butylteranyl-2-methylpropionate methyl, 2- n-butyl terranyl-2-methylpropionate ethyl, 2- n-Butyl teranyl propionitrile and 2-methyl-2-n-butyl terranyl propionitrile are preferable.

これらの一般式(1)で表されるテルル含有化合物は、1種を単独で用いてもよく、2種以上を組み合わせて用いてもよい。一般式(1)で表されるテルル含有化合物として、たとえばエチル−2−メチル−2−メチルテラニル−プロピオネートを採用する場合、その合成方法としては、特開2011−74380号公報に開示されている方法で得ることができる。  One of these tellurium-containing compounds represented by the general formula (1) may be used alone, or two or more thereof may be used in combination. When, for example, ethyl-2-methyl-2-methylterranyl-propionate is employed as the tellurium-containing compound represented by the general formula (1), a synthesis method thereof is disclosed in Japanese Patent Application Laid-Open No. 2011-74380. Can be obtained at

重合工程においては、上記のテルル含有化合物に加え、重合促進剤としてアゾ系重合開始剤を添加してもよい。アゾ系重合開始剤としては、通常のラジカル重合に用いる開始剤であれば特に限定されないが、例示するなら2,2'−アゾビス(イソブチロニトリル)(AIBN)、2,2'−アゾビス(2−メチルブチロニトリル)(AMBN)、2,2'−アゾビス(2,4−ジメチルバレロニトリル)(ADVN)、1,1'−アゾビス(1−シクロヘキサンカルボニトリル)(ACHN)、ジメチル−2,2'−アゾビスイソブチレート(MAIB)、4,4'−アゾビス(4−シアノバレリアン酸)(ACVA)、1,1'−アゾビス(1−アセトキシ−1−フェニルエタン)、2,2'−アゾビス(2−メチルブチルアミド)、2,2'−アゾビス(4−メトキシ−2,4−ジメチルバレロニトリル)、2,2'−アゾビス(2−メチルアミジノプロパン)二塩酸塩、2,2'−アゾビス[2−(2−イミダゾリン−2−イル)プロパン]、2,2'−アゾビス[2−メチル−N−(2−ヒドロキシエチル)プロピオンアミド]、2,2'−アゾビス(2,4,4−トリメチルペンタン)、2−シアノ−2−プロピルアゾホルムアミド、2,2'−アゾビス(N−ブチル−2−メチルプロピオンアミド)、2,2'−アゾビス(N−シクロヘキシル−2−メチルプロピオンアミド)等が挙げられる。上記アゾ系重合開始剤を使用する場合、重合開始剤として用いた式(1)のテルル含有化合物1molに対して好ましくは0.01〜100mol、より好ましくは0.1〜100mol、さらに好ましくは0.1〜5molの割合で使用されることが望ましい。  In the polymerization step, an azo polymerization initiator may be added as a polymerization accelerator in addition to the tellurium-containing compound. The azo polymerization initiator is not particularly limited as long as it is an initiator used for ordinary radical polymerization. However, for example, 2,2′-azobis (isobutyronitrile) (AIBN), 2,2′-azobis ( 2-methylbutyronitrile) (AMBN), 2,2′-azobis (2,4-dimethylvaleronitrile) (ADVN), 1,1′-azobis (1-cyclohexanecarbonitrile) (ACHN), dimethyl-2 2,2′-azobisisobutyrate (MAIB), 4,4′-azobis (4-cyanovaleric acid) (ACVA), 1,1′-azobis (1-acetoxy-1-phenylethane), 2,2 '-Azobis (2-methylbutyramide), 2,2'-azobis (4-methoxy-2,4-dimethylvaleronitrile), 2,2'-azobis (2-methylamidinopropane) dihydrochloride, 2, 2'-azobis [2- (2-imi Zolin-2-yl) propane], 2,2′-azobis [2-methyl-N- (2-hydroxyethyl) propionamide], 2,2′-azobis (2,4,4-trimethylpentane), 2 -Cyano-2-propylazoformamide, 2,2'-azobis (N-butyl-2-methylpropionamide), 2,2'-azobis (N-cyclohexyl-2-methylpropionamide) and the like. When the azo polymerization initiator is used, it is preferably 0.01 to 100 mol, more preferably 0.1 to 100 mol, still more preferably 0 with respect to 1 mol of the tellurium-containing compound of the formula (1) used as the polymerization initiator. It is desirable to be used at a ratio of 0.1 to 5 mol.

アクリル重合体(A)を、リビングラジカル重合によって形成する方法は、たとえば次の通りである。不活性ガスで置換した容器で、前述した単量体の混合物と一般式(1)で示されるリビングラジカル重合開始剤及び所望によりアゾ系重合開始剤を混合する。この時、不活性ガスとしては、窒素、アルゴン、ヘリウム等を挙げることができる。好ましくは、アルゴン、窒素が良い。特に好ましくは、窒素が良い。単量体と一般式(1)で示されるリビングラジカル重合開始剤の使用量は、目的とするアクリル重合体(A)の分子量あるいは分子量分布により適宜調節すればよい。好ましい使用量としては、概ね各単量体の分子量に仕込み割合を乗じて得た値の総和を目的とするアクリル重合体(A)の重量平均分子量(Mw)で割った値(使用量の単位はモル数)であり、場合によりその値の0.3〜3倍程度の量を使用する。  A method for forming the acrylic polymer (A) by living radical polymerization is, for example, as follows. In a container substituted with an inert gas, the mixture of monomers described above, the living radical polymerization initiator represented by the general formula (1) and, if desired, an azo polymerization initiator are mixed. At this time, examples of the inert gas include nitrogen, argon, helium, and the like. Argon and nitrogen are preferable. Nitrogen is particularly preferable. What is necessary is just to adjust suitably the usage-amount of a living radical polymerization initiator shown by a monomer and General formula (1) with the molecular weight or molecular weight distribution of the target acrylic polymer (A). The preferred amount used is a value (unit of amount used) divided by the weight average molecular weight (Mw) of the acrylic polymer (A) for the purpose of summing the values obtained by multiplying the molecular weight of each monomer by the charge ratio. Is the number of moles). In some cases, the amount is about 0.3 to 3 times the value.

重合は、通常、無溶媒で行うが、ラジカル重合で一般に使用される有機溶媒を使用しても構わない。使用できる溶媒としては、例えば、ベンゼン、トルエン、N,N−ジメチルホルムアミド(DMF)、ジメチルスルホキシド(DMSO)、アセトン、クロロホルム、四塩化炭素、テトラヒドロフラン(THF)、酢酸エチル、トリフルオロメチルベンゼン等が挙げられる。また、水性溶媒も使用でき、例えば、水、メタノール、エタノール、イソプロパノール、n−ブタノール、エチルセロソルブ、ブチルセロソルブ、1−メトキシ−2−プロパノール等が挙げられる。溶媒の使用量としては適宜調節すればよいが、例えば、単量体1gに対して、溶媒を0.01〜100ml、好ましくは、0.05〜10ml、特に好ましくは0.05〜0.5mlが良い。  The polymerization is usually performed without a solvent, but an organic solvent generally used in radical polymerization may be used. Examples of the solvent that can be used include benzene, toluene, N, N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), acetone, chloroform, carbon tetrachloride, tetrahydrofuran (THF), ethyl acetate, trifluoromethylbenzene, and the like. Can be mentioned. Moreover, an aqueous solvent can also be used, for example, water, methanol, ethanol, isopropanol, n-butanol, ethyl cellosolve, butyl cellosolve, 1-methoxy-2-propanol, etc. are mentioned. The amount of the solvent used may be appropriately adjusted. For example, the solvent is 0.01 to 100 ml, preferably 0.05 to 10 ml, particularly preferably 0.05 to 0.5 ml per 1 g of the monomer. Is good.

次に、上記混合物を撹拌する。反応温度、反応時間は、得られるアクリル重合体(A)の分子量あるいは分子量分布により適宜調節すればよいが、通常、60〜150℃で、5〜100時間撹拌する。好ましくは、80〜120℃で、10〜30時間撹拌するのが良い。重合は、通常、常圧で行われるが、加圧あるいは減圧しても構わない。反応終了後、常法により使用溶媒や残存モノマーを減圧下除去したり、沈殿ろ過、再沈殿したり、あるいはカラム分離等をして目的のアクリル重合体(A)を必要に応じて精製する。反応処理については、目的物に支障がなければどのような処理方法でも行うことができる。
例えば、 アクリル重合体(A)において、その中に含まれる重量平均分子量Mw5万以下の低分子量成分の割合を0.1質量%以下とするには、下記の分別法を採用することができる。まず、メタノール、エタノール、n−プロパノール、イソプロパノールなどの低級アルコール、もしくはペンタン、ヘキサン、ヘプタンなどの炭素数5〜10の脂肪族炭化水素、好ましくはメタノールもしくはヘキサン100質量部中に、アクリル重合体(A)を、固形分として1〜30質量部程度の割合で加え、室温でかきまぜて沈殿を形成させる。次いで、この沈殿物をデカンテーションなどの方法で固液分離したのち、前記低級アルコールもしくは炭素数5〜10の脂肪族炭化水素で洗浄後使用する。この分別法により、アクリル重合体(A)中の分子量Mw5万以下の低分子量成分の割合を0.1質量%以下とすることができる。
Next, the mixture is stirred. The reaction temperature and reaction time may be appropriately adjusted depending on the molecular weight or molecular weight distribution of the acrylic polymer (A) to be obtained, but are usually stirred at 60 to 150 ° C. for 5 to 100 hours. Preferably, it is good to stir at 80-120 degreeC for 10 to 30 hours. The polymerization is usually carried out at normal pressure, but may be pressurized or reduced in pressure. After completion of the reaction, the intended acrylic polymer (A) is purified as necessary by removing the solvent and residual monomers under reduced pressure, precipitation filtration, reprecipitation, column separation, or the like by a conventional method. The reaction treatment can be performed by any treatment method as long as there is no problem with the object.
For example, in the acrylic polymer (A), the following fractionation method can be adopted in order to make the proportion of the low molecular weight component having a weight average molecular weight Mw of 50,000 or less contained in the acrylic polymer (A) 0.1 mass% or less. First, a lower alcohol such as methanol, ethanol, n-propanol, or isopropanol, or an aliphatic hydrocarbon having 5 to 10 carbon atoms such as pentane, hexane, or heptane, preferably 100 parts by mass of methanol or hexane, an acrylic polymer ( A) is added at a ratio of about 1 to 30 parts by mass as a solid content, and stirred at room temperature to form a precipitate. Next, the precipitate is subjected to solid-liquid separation by a method such as decantation, and then used after washing with the lower alcohol or an aliphatic hydrocarbon having 5 to 10 carbon atoms. By this fractionation method, the ratio of the low molecular weight component having a molecular weight Mw of 50,000 or less in the acrylic polymer (A) can be made 0.1 mass% or less.

このリビングラジカル重合法においては、アクリル重合体(A)を構成する各単量体の混合物を使用することにより、ランダム共重合体のアクリル重合体(A)を得ることができる。該ランダム共重合体は、単量体の種類に関係なく、反応させる単量体の比率(モル比)通りの共重合体を得ることができる。テルル含有化合物を重合開始剤とすることで、分子量制御及び分子量分布制御を非常に温和な条件下で行うことができる。アクリル重合体(A)の分子量は、反応時間、テルル含有化合物の量により調整可能である。具体的には、分子量を増加させるためには、単量体に対するテルル含有化合物の配合割合を低減し、重合時間を増加させればよい。しかし、これでは分子量の大きいアクリル重合体(A)を得るには長時間を要することになる。そこで、重合時間の低減を図るには、重合温度を高くしたり、前記アゾ系重合開始剤を添加することにより達成することができる。しかしながら、重合温度が高すぎたり、アゾ系重合開始剤の添加量が多すぎると、アクリル重合体(A)の分子量分布を増大させることとなるので、それとの調整が必要である。  In this living radical polymerization method, an acrylic polymer (A) of a random copolymer can be obtained by using a mixture of monomers constituting the acrylic polymer (A). Regardless of the type of monomer, the random copolymer can provide a copolymer having a ratio (molar ratio) of monomers to be reacted. By using a tellurium-containing compound as a polymerization initiator, molecular weight control and molecular weight distribution control can be performed under very mild conditions. The molecular weight of the acrylic polymer (A) can be adjusted by the reaction time and the amount of the tellurium-containing compound. Specifically, in order to increase the molecular weight, the blending ratio of the tellurium-containing compound to the monomer may be reduced and the polymerization time may be increased. However, it takes a long time to obtain an acrylic polymer (A) having a large molecular weight. Thus, reduction of the polymerization time can be achieved by increasing the polymerization temperature or adding the azo polymerization initiator. However, if the polymerization temperature is too high, or if the amount of the azo polymerization initiator added is too large, the molecular weight distribution of the acrylic polymer (A) will be increased, so adjustment with it is necessary.

接着剤組成物の全体の質量中に占めるアクリル重合体(A)の配合割合は、35〜90質量%であることが好ましく、40〜85質量%であることがより好ましく、45〜80質量%であることがさらに好ましい。アクリル重合体(A)の配合量を上記のように制限することで、接着剤組成物の硬化前における弾性が高められ、接着剤層を硬化せずにワイヤーボンディングを行う半導体装置の製造方法においてボンディング時の衝撃により接着剤層の変形が生じにくくなり、不具合の発生が抑制される傾向がある。また、このように接着剤組成物中におけるアクリル重合体(A)の占める割合が多い場合には、重量平均分子量(Mw)が35万以上であり、分子量分布(Mw/Mn)が3以下であるアクリル重合体(A)を用いることによる本発明のパッケージ信頼性向上の効果がより顕著となる。  The blending ratio of the acrylic polymer (A) in the total mass of the adhesive composition is preferably 35 to 90% by mass, more preferably 40 to 85% by mass, and 45 to 80% by mass. More preferably. In the method for manufacturing a semiconductor device in which the amount of the acrylic polymer (A) is limited as described above, the elasticity of the adhesive composition before curing is increased, and wire bonding is performed without curing the adhesive layer. There is a tendency that deformation of the adhesive layer is less likely to occur due to an impact at the time of bonding, and occurrence of defects is suppressed. Further, when the proportion of the acrylic polymer (A) in the adhesive composition is large, the weight average molecular weight (Mw) is 350,000 or more and the molecular weight distribution (Mw / Mn) is 3 or less. The effect of improving the package reliability of the present invention by using a certain acrylic polymer (A) becomes more remarkable.

(B)エポキシ系熱硬化性樹脂
エポキシ系熱硬化性樹脂(B)としては、従来公知のエポキシ樹脂を用いることができる。エポキシ系熱硬化性樹脂(B)としては、具体的には、多官能系エポキシ樹脂や、ビフェニル化合物、ビスフェノールAジグリシジルエーテルやその水添物、オルソクレゾールノボラックエポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、ビフェニル型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェニレン骨格型エポキシ樹脂など、分子中に2官能以上有するエポキシ化合物が挙げられる。これらは1種単独で、または2種以上を組み合わせて用いることができる。
(B) Epoxy-type thermosetting resin As an epoxy-type thermosetting resin (B), a conventionally well-known epoxy resin can be used. Specific examples of the epoxy thermosetting resin (B) include polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and hydrogenated products thereof, orthocresol novolac epoxy resins, dicyclopentadiene type epoxy resins. And biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin and the like, and epoxy compounds having two or more functional groups in the molecule. These can be used individually by 1 type or in combination of 2 or more types.

接着剤組成物には、アクリル重合体(A)100質量部に対して、エポキシ系熱硬化性樹脂(B)が、好ましくは1〜100質量部含まれ、より好ましくは3〜70質量部含まれ、特に好ましくは5〜50質量部含まれる。エポキシ系熱硬化性樹脂(B)の含有量がこのような範囲にあることで、十分な接着性を維持するとともに、接着剤層の弾性が維持され、硬化前の状態であっても、ワイヤーボンディング工程におけるボンディング時の衝撃により接着剤層の変形が生じにくくなり、不具合の発生が抑制される傾向がある。  The adhesive composition preferably contains 1 to 100 parts by mass, more preferably 3 to 70 parts by mass of the epoxy thermosetting resin (B) with respect to 100 parts by mass of the acrylic polymer (A). Particularly preferably, 5 to 50 parts by mass are contained. The content of the epoxy thermosetting resin (B) is in such a range, so that sufficient adhesiveness is maintained, the elasticity of the adhesive layer is maintained, and even in the state before curing, the wire There is a tendency that deformation of the adhesive layer is less likely to occur due to an impact at the time of bonding in the bonding process, and occurrence of defects is suppressed.

(C)熱硬化剤
熱硬化剤(C)は、エポキシ系熱硬化性樹脂(B)に対する硬化剤として機能する。好ましい熱硬化剤(C)としては、1分子中にエポキシ基と反応しうる官能基を2個以上有する化合物が挙げられる。その官能基としてはフェノール性水酸基、アルコール性水酸基、アミノ基、カルボキシル基および酸無水物などが挙げられる。これらのうち好ましくはフェノール性水酸基、アミノ基、酸無水物などが挙げられ、さらに好ましくはフェノール性水酸基、アミノ基が挙げられる。さらに好ましくはフェノール性水酸基、アミノ基が挙げられる。
(C) Thermosetting agent The thermosetting agent (C) functions as a curing agent for the epoxy thermosetting resin (B). Preferred examples of the thermosetting agent (C) include compounds having two or more functional groups capable of reacting with an epoxy group in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and an acid anhydride. Of these, phenolic hydroxyl groups, amino groups, acid anhydrides and the like are preferable, and phenolic hydroxyl groups and amino groups are more preferable. More preferably, a phenolic hydroxyl group and an amino group are mentioned.

フェノール系硬化剤の具体的な例としては、多官能系フェノール樹脂、ビフェノール、ノボラック型フェノール樹脂、ジシクロペンタジエン系フェノール樹脂、ザイロック型フェノール樹脂、アラルキルフェノール樹脂が挙げられる。アミン系硬化剤の具体的な例としては、DICY(ジシアンジアミド)が挙げられる。これらは、1種単独で、または2種以上混合して使用することができる。  Specific examples of the phenolic curing agent include polyfunctional phenolic resin, biphenol, novolac type phenolic resin, dicyclopentadiene type phenolic resin, zylock type phenolic resin, and aralkylphenolic resin. A specific example of the amine curing agent is DICY (dicyandiamide). These can be used individually by 1 type or in mixture of 2 or more types.

接着剤組成物における熱硬化剤(C)の含有量は、エポキシ系熱硬化性樹脂(B)100質量部に対して、0.1〜500質量部であることが好ましく、1〜200質量部であることがより好ましい。熱硬化剤(C)の含有量が少ないと硬化不足で接着性が得られないことがあり、過剰であると接着剤層の吸湿率が高まりパッケージ信頼性を低下させることがある。  The content of the thermosetting agent (C) in the adhesive composition is preferably 0.1 to 500 parts by mass, and 1 to 200 parts by mass with respect to 100 parts by mass of the epoxy thermosetting resin (B). It is more preferable that If the content of the thermosetting agent (C) is small, the adhesiveness may not be obtained due to insufficient curing, and if it is excessive, the moisture absorption rate of the adhesive layer increases and the package reliability may be lowered.

(D)架橋剤
接着剤組成物には、架橋剤(D)を添加することが好ましい。架橋剤(D)としては有機多価イソシアネート化合物、有機多価イミン化合物などが挙げられる。架橋構造の導入により、本発明の接着剤組成物を用いた半導体装置の信頼性が向上する。リビングラジカル重合はフリーラジカル重合と比較して活性点での反応が非常に緩やかであるという特徴を有する。すなわち、フリーラジカル重合では、活性点での反応が非常に早いために反応性の高い単量体から重合し、その後、反応性の低い単量体が重合するものと考えられている。一方、リビングラジカル重合では、活性点での反応が緩やかであるため、単量体の反応性の影響を受けずに均等に重合が進行し、均等な組成になるものと考えられる。かかるリビングラジカル重合の特徴の結果として、架橋剤(D)と反応する官能基を有する単量体を用いた場合に、得られたアクリル重合体(A)中に、架橋剤(D)と反応する官能基を有する単量体が重合体中に取り込まれず、架橋剤(D)と反応する官能基を実質的に有さないアクリル重合体(A)の分子が発生する確率が低減する。これにより、低分子量のアクリル重合体(A)の分子が存在したとしても、架橋剤との反応により三次元網目構造に取り込まれる可能性が高く、三次元網目構造に取り込まれずに残存した低分子量の重合体がパッケージ信頼性を損なう可能性も低減されると考えられる。
(D) Crosslinking agent It is preferable to add a crosslinking agent (D) to the adhesive composition. Examples of the crosslinking agent (D) include organic polyvalent isocyanate compounds and organic polyvalent imine compounds. By introducing the crosslinked structure, the reliability of the semiconductor device using the adhesive composition of the present invention is improved. Living radical polymerization has a feature that the reaction at the active site is very gradual compared to free radical polymerization. That is, in free radical polymerization, since the reaction at the active site is very fast, it is considered that polymerization is performed from a monomer having high reactivity, and then a monomer having low reactivity is polymerized. On the other hand, in the living radical polymerization, since the reaction at the active site is slow, it is considered that the polymerization proceeds evenly without being affected by the reactivity of the monomer, resulting in an equivalent composition. As a result of the characteristics of the living radical polymerization, when a monomer having a functional group that reacts with the crosslinking agent (D) is used, the resulting acrylic polymer (A) reacts with the crosslinking agent (D). The monomer having the functional group to be absorbed is not taken into the polymer, and the probability that the molecule of the acrylic polymer (A) substantially having no functional group that reacts with the crosslinking agent (D) is generated is reduced. As a result, even if a low molecular weight acrylic polymer (A) molecule is present, it is highly likely to be incorporated into the three-dimensional network structure by reaction with the crosslinking agent, and the low molecular weight remaining without being incorporated into the three-dimensional network structure. It is considered that the possibility that the polymer of this will impair the package reliability is also reduced.

上記有機多価イソシアネート化合物としては、芳香族多価イソシアネート化合物、脂肪族多価イソシアネート化合物、脂環族多価イソシアネート化合物およびこれらの有機多価イソシアネート化合物の三量体、ならびにこれら有機多価イソシアネート化合物とポリオール化合物とを反応させて得られる末端イソシアネートウレタンプレポリマー等を挙げることができる。  Examples of the organic polyvalent isocyanate compound include aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, alicyclic polyvalent isocyanate compounds, trimers of these organic polyvalent isocyanate compounds, and these organic polyvalent isocyanate compounds. And a terminal isocyanate urethane prepolymer obtained by reacting a polyol compound with a polyol compound.

有機多価イソシアネート化合物としては、たとえば2,4−トリレンジイソシアネート、2,6−トリレンジイソシアネート、1,3−キシリレンジイソシアネート、1,4−キシレンジイソシアネート、ジフェニルメタン−4,4’−ジイソシアネート、ジフェニルメタン−2,4’−ジイソシアネート、3−メチルジフェニルメタンジイソシアネート、ヘキサメチレンジイソシアネート、イソホロンジイソシアネート、ジシクロヘキシルメタン−4,4’−ジイソシアネート、ジシクロヘキシルメタン−2,4’−ジイソシアネート、リジンイソシアネート、およびこれらのポリオールへのアダクト体が挙げられる。  Examples of organic polyvalent isocyanate compounds include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′-diisocyanate, diphenylmethane. -2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate, and their polyols Adduct body is mentioned.

イソシアネート系の架橋剤を用いる場合、アクリル重合体(A)は、架橋剤と反応する官能基として、水酸基を有することが好ましい。架橋剤がイソシアネート基を有し、アクリル重合体(A)が水酸基を有すると、イソシアネート基と水酸基の反応により架橋剤とアクリル重合体(A)との結合が容易に形成され、接着剤に架橋構造を簡便に導入することができる。  In the case of using an isocyanate-based crosslinking agent, the acrylic polymer (A) preferably has a hydroxyl group as a functional group that reacts with the crosslinking agent. When the crosslinking agent has an isocyanate group and the acrylic polymer (A) has a hydroxyl group, a bond between the crosslinking agent and the acrylic polymer (A) is easily formed by the reaction of the isocyanate group and the hydroxyl group, and the adhesive is crosslinked. The structure can be introduced simply.

上記有機多価イミン化合物としては、N,N’−ジフェニルメタン−4,4’−ビス(1−アジリジンカルボキシアミド)、トリメチロールプロパン−トリ−β−アジリジニルプロピオネート、テトラメチロールメタン−トリ−β−アジリジニルプロピオネートおよびN,N’−トルエン−2,4−ビス(1−アジリジンカルボキシアミド)トリエチレンメラミン等を挙げることができる。  Examples of the organic polyvalent imine compound include N, N′-diphenylmethane-4,4′-bis (1-aziridinecarboxamide), trimethylolpropane-tri-β-aziridinylpropionate, tetramethylolmethane-tri -Β-aziridinylpropionate and N, N′-toluene-2,4-bis (1-aziridinecarboxyamide) triethylenemelamine can be exemplified.

有機多価イミン化合物を架橋剤として用いた場合には、アクリル重合体(A)が架橋剤と反応する官能基としてカルボキシル基を有していることが好ましく、これによりアクリル重合体と架橋剤の間に結合を生じ、接着剤に架橋構造が導入される。  When an organic polyvalent imine compound is used as a crosslinking agent, the acrylic polymer (A) preferably has a carboxyl group as a functional group that reacts with the crosslinking agent. Bonding occurs between them, and a crosslinked structure is introduced into the adhesive.

架橋剤(D)を用いる場合、架橋剤(D)はアクリル重合体(A)100質量部に対して通常0.01〜20質量部、好ましくは0.1〜10質量部、より好ましくは0.5〜5質量部の比率で用いられる。  When using a crosslinking agent (D), a crosslinking agent (D) is 0.01-20 mass parts normally with respect to 100 mass parts of acrylic polymers (A), Preferably it is 0.1-10 mass parts, More preferably, it is 0. Used at a ratio of 5 to 5 parts by mass.

その他の成分
接着剤組成物は、上記成分に加えて下記成分を含むことができる。
Other Components The adhesive composition can contain the following components in addition to the above components.

(E)硬化促進剤
硬化促進剤(E)は、接着剤組成物の硬化速度を調整するために用いられる。硬化促進剤(E)は、特に、エポキシ系熱硬化性樹脂(B)と熱硬化剤(C)とを併用する場合に好ましく用いられる。
(E) Curing accelerator The curing accelerator (E) is used to adjust the curing rate of the adhesive composition. The curing accelerator (E) is preferably used particularly when the epoxy thermosetting resin (B) and the thermosetting agent (C) are used in combination.

好ましい硬化促進剤としては、トリエチレンジアミン、ベンジルジメチルアミン、トリエタノールアミン、ジメチルアミノエタノール、トリス(ジメチルアミノメチル)フェノールなどの3級アミン類;2−メチルイミダゾール、2−フェニルイミダゾール、2−フェニル−4−メチルイミダゾール、2−フェニル−4,5−ジヒドロキシメチルイミダゾール、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾールなどのイミダゾール類;トリブチルホスフィン、ジフェニルホスフィン、トリフェニルホスフィンなどの有機ホスフィン類;テトラフェニルホスホニウムテトラフェニルボレート、トリフェニルホスフィンテトラフェニルボレートなどのテトラフェニルボロン塩などが挙げられる。これらは1種単独で、または2種以上混合して使用することができる。  Preferred curing accelerators include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl- Imidazoles such as 4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole; Organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine; And tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphinetetraphenylborate. These can be used individually by 1 type or in mixture of 2 or more types.

硬化促進剤(E)を用いる場合、硬化促進剤(E)は、エポキシ系熱硬化性樹脂(B)および熱硬化剤(C)の合計100質量部に対して、好ましくは0.01〜10質量部、さらに好ましくは0.1〜1質量部の量で含まれる。硬化促進剤(E)を上記範囲の量で含有することにより、高温度高湿度下に曝されても優れた接着特性を有し、厳しいリフロー条件に曝された場合であっても高いパッケージ信頼性を達成することができる。硬化促進剤(E)の含有量が少ないと硬化不足で十分な接着特性が得られず、過剰であると高い極性をもつ硬化促進剤は高温度高湿度下で接着剤層中を接着界面側に移動し、偏析することによりパッケージの信頼性を低下させることが懸念される。  When using a hardening accelerator (E), a hardening accelerator (E) becomes like this. Preferably it is 0.01-10 with respect to a total of 100 mass parts of an epoxy-type thermosetting resin (B) and a thermosetting agent (C). It is contained in an amount of part by mass, more preferably 0.1 to 1 part by mass. By containing the curing accelerator (E) in an amount within the above range, it has excellent adhesive properties even when exposed to high temperatures and high humidity, and high package reliability even when exposed to severe reflow conditions. Sex can be achieved. If the content of the curing accelerator (E) is small, sufficient adhesive properties cannot be obtained due to insufficient curing, and if it is excessive, the curing accelerator having a high polarity will pass through the adhesive layer under high temperature and high humidity. There is concern that the reliability of the package may be reduced by moving to and segregating.

(F)エネルギー線重合性化合物
接着剤組成物には、エネルギー線重合性化合物が配合されていてもよい。エネルギー線重合性化合物(F)は、エネルギー線重合性基を含み、紫外線、電子線等のエネルギー線の照射を受けると重合硬化する。このようなエネルギー線重合性化合物(F)として具体的には、トリメチロールプロパントリアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ジペンタエリスリトールモノヒドロキシペンタアクリレート、ジペンタエリスリトールヘキサアクリレートあるいは1,4−ブチレングリコールジアクリレート、1,6−ヘキサンジオールジアクリレート、ポリエチレングリコールジアクリレート、オリゴエステルアクリレート、ウレタンアクリレート系オリゴマー、エポキシ変性アクリレート、ポリエーテルアクリレートおよびイタコン酸オリゴマーなどのアクリレート系化合物が挙げられる。このような化合物は、分子内に少なくとも1つの重合性二重結合を有し、通常は、重量平均分子量が100〜30000、好ましくは300〜10000程度である。エネルギー線重合性化合物(F)を用いる場合、その配合量は、特に限定はされないが、接着剤組成物の固形分全量100質量%中、1〜50質量%程度の割合で用いることが好ましい。
(F) Energy ray polymerizable compound The energy ray polymerizable compound may be mix | blended with the adhesive composition. The energy ray polymerizable compound (F) contains an energy ray polymerizable group and is polymerized and cured when irradiated with energy rays such as ultraviolet rays and electron beams. Specific examples of such energy beam polymerizable compounds (F) include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, or 1,4. Examples include acrylate compounds such as butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy-modified acrylate, polyether acrylate, and itaconic acid oligomer. Such a compound has at least one polymerizable double bond in the molecule, and usually has a weight average molecular weight of about 100 to 30,000, preferably about 300 to 10,000. When the energy beam polymerizable compound (F) is used, the blending amount is not particularly limited, but it is preferably used at a ratio of about 1 to 50% by mass in 100% by mass of the total solid content of the adhesive composition.

(G)光重合開始剤
接着剤組成物が、前述したエネルギー線重合性化合物(F)を含有する場合には、その使用に際して、紫外線等のエネルギー線を照射して、エネルギー線重合性化合物を硬化させる。この際、接着剤層中に光重合開始剤(G)を含有させることで、重合硬化時間ならびに光線照射量を少なくすることができる。
(G) Photopolymerization initiator When the adhesive composition contains the above-mentioned energy beam polymerizable compound (F), in use, the energy ray polymerizable compound is irradiated by irradiating energy rays such as ultraviolet rays. Harden. At this time, by including the photopolymerization initiator (G) in the adhesive layer, the polymerization curing time and the light irradiation amount can be reduced.

このような光重合開始剤(G)として具体的には、ベンゾフェノン、アセトフェノン、ベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル、ベンゾインイソブチルエーテル、ベンゾイン安息香酸、ベンゾイン安息香酸メチル、ベンゾインジメチルケタール、2,4−ジエチルチオキサンソン、α−ヒドロキシシクロヘキシルフェニルケトン、ベンジルジフェニルサルファイド、テトラメチルチウラムモノサルファイド、アゾビスイソブチロニトリル、ベンジル、ジベンジル、ジアセチル、1,2−ジフェニルメタン、2−ヒドロキシ−2−メチル−1−[4−(1−メチルビニル)フェニル]プロパノン、2,4,6−トリメチルベンゾイルジフェニルフォスフィンオキサイドおよびβ−クロールアンスラキノンなどが挙げられる。光重合開始剤(G)は1種類単独で、または2種類以上を組み合わせて用いることができる。  Specific examples of such photopolymerization initiator (G) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal. 2,4-diethylthioxanthone, α-hydroxycyclohexyl phenyl ketone, benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl, 1,2-diphenylmethane, 2-hydroxy- 2-methyl-1- [4- (1-methylvinyl) phenyl] propanone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide and β-alkyl Examples thereof include roll anthraquinone. A photoinitiator (G) can be used individually by 1 type or in combination of 2 or more types.

光重合開始剤(G)を用いる場合、その配合割合は、エネルギー線重合性化合物(F)100質量部に対して0.1〜10質量部含まれることが好ましく、1〜5質量部含まれることがより好ましい。0.1質量部未満であると光重合の不足で満足なピックアップ性が得られないことがあり、10質量部を超えると光重合に寄与しない残留物が生成し、接着剤層の硬化性が不十分となることがある。  When using a photoinitiator (G), it is preferable that the mixture ratio is 0.1-10 mass parts with respect to 100 mass parts of energy-beam polymeric compounds (F), and 1-5 mass parts is contained. It is more preferable. When the amount is less than 0.1 parts by mass, satisfactory pick-up property may not be obtained due to insufficient photopolymerization. When the amount exceeds 10 parts by mass, a residue that does not contribute to photopolymerization is generated, and the curability of the adhesive layer is increased. It may be insufficient.

(H)カップリング剤
カップリング剤(H)は、有機化合物と結合しうる基と、無機化合物と反応しうる基を有する化合物であり、かかるカップリング剤を接着剤層の被着体に対する接着性、密着性を向上させるために用いてもよい。また、カップリング剤(H)を使用することで、接着剤層を硬化して得られる硬化物の耐熱性を損なうことなく、その耐水性を向上することができる。
(H) Coupling agent The coupling agent (H) is a compound having a group capable of binding to an organic compound and a group capable of reacting with an inorganic compound, and bonding the coupling agent to an adherend of the adhesive layer. May be used to improve the property and adhesion. Moreover, the water resistance can be improved by using a coupling agent (H), without impairing the heat resistance of the hardened | cured material obtained by hardening | curing an adhesive bond layer.

カップリング剤(H)の有機化合物と結合しうる基としては、上記アクリル重合体(A)、エポキシ系熱硬化性樹脂(B)などが有する官能基と反応する基であることが好ましい。カップリング剤(H)としては、シランカップリング剤が望ましい。このようなカップリング剤としてはγ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルメチルジエトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン、γ−(メタクリロキシプロピル)トリメトキシシラン、γ−アミノプロピルトリメトキシシラン、N−6−(アミノエチル)−γ−アミノプロピルトリメトキシシラン、N−6−(アミノエチル)−γ−アミノプロピルメチルジエトキシシラン、N−フェニル−γ−アミノプロピルトリメトキシシラン、γ−ウレイドプロピルトリエトキシシラン、γ−メルカプトプロピルトリメトキシシラン、γ−メルカプトプロピルメチルジメトキシシラン、ビス(3−トリエトキシシリルプロピル)テトラスルファン、メチルトリメトキシシラン、メチルトリエトキシシラン、ビニルトリメトキシシラン、ビニルトリアセトキシシラン、イミダゾールシラン、3−イソシアネートプロピルトリエトキシシラン、イソシアネートメチルメチルジブトキシシラン、イソシアネートメチルトリエトキシシランなどが挙げられる。これらは1種単独で、または2種以上混合して使用することができる。  The group capable of binding to the organic compound of the coupling agent (H) is preferably a group that reacts with a functional group of the acrylic polymer (A), the epoxy thermosetting resin (B), or the like. As the coupling agent (H), a silane coupling agent is desirable. Such coupling agents include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ- (methacryloxypropyl). ) Trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropylmethyldiethoxysilane, N- Phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, bis (3-triethoxysilylpropyl) tetrasulfane, methyltrimethoxy Silane, meth Examples include rutriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, imidazolesilane, 3-isocyanatopropyltriethoxysilane, isocyanatemethylmethyldibutoxysilane, and isocyanatemethyltriethoxysilane. These can be used individually by 1 type or in mixture of 2 or more types.

カップリング剤(H)を用いる場合、カップリング剤は、アクリル重合体(A)、エポキシ系熱硬化性樹脂(B)、および熱硬化剤(C)の合計100質量部に対して、通常0.1〜20質量部、好ましくは0.2〜10質量部、より好ましくは0.3〜5質量部の割合で含まれる。カップリング剤(H)の含有量が0.1質量部未満だと上記の効果が得られない可能性があり、20質量部を超えるとアウトガスの原因となる可能性がある。  When the coupling agent (H) is used, the coupling agent is usually 0 with respect to a total of 100 parts by mass of the acrylic polymer (A), the epoxy thermosetting resin (B), and the thermosetting agent (C). 0.1 to 20 parts by mass, preferably 0.2 to 10 parts by mass, more preferably 0.3 to 5 parts by mass. If the content of the coupling agent (H) is less than 0.1 parts by mass, the above effect may not be obtained, and if it exceeds 20 parts by mass, it may cause outgassing.

(I)無機充填材
無機充填材(I)を接着剤組成物に配合することにより、接着剤層の熱膨張係数を調整することが可能となり、半導体チップや金属または有機基板に対して硬化後の接着剤層の熱膨張係数を最適化することでパッケージ信頼性を向上させることができる。また、接着剤層の硬化後の吸湿率を低減させることも可能となる。
(I) Inorganic filler By blending the inorganic filler (I) into the adhesive composition, it becomes possible to adjust the thermal expansion coefficient of the adhesive layer, and after curing on a semiconductor chip, metal or organic substrate Package reliability can be improved by optimizing the thermal expansion coefficient of the adhesive layer. Moreover, it becomes possible to reduce the moisture absorption rate after hardening of an adhesive bond layer.

好ましい無機充填材としては、シリカ、タルク、炭酸カルシウム、チタンホワイト、ベンガラ、炭化珪素、窒化ホウ素等の粉末、これらを球形化したビーズ、単結晶繊維およびガラス繊維等が挙げられる。これらのなかでも、シリカフィラーが好ましい。上記無機充填材(I)は単独でまたは2種以上を混合して使用することができる。無機充填材(I)を用いる場合、その含有量は、接着剤組成物の全固形分100質量部に対して、通常0〜80質量%の範囲で調整が可能である。  Preferable inorganic fillers include powders such as silica, talc, calcium carbonate, titanium white, bengara, silicon carbide, boron nitride, spherical beads of these, single crystal fibers, and glass fibers. Among these, silica filler is preferable. The said inorganic filler (I) can be used individually or in mixture of 2 or more types. When using inorganic filler (I), the content can be normally adjusted in the range of 0 to 80% by mass with respect to 100 parts by mass of the total solid content of the adhesive composition.

(J)汎用添加剤
接着剤組成物には、上記の他に、必要に応じて各種添加剤が配合されてもよい。各種添加剤としては、可塑剤、帯電防止剤、酸化防止剤、顔料、染料、ゲッタリング剤などが挙げられる。
(J) General-purpose additive In addition to the above, various additives may be blended in the adhesive composition as necessary. Various additives include plasticizers, antistatic agents, antioxidants, pigments, dyes, gettering agents and the like.

上記のような各成分からなる接着剤組成物からなる接着剤層は、感圧接着性と加熱硬化性とを有し、未硬化状態では各種被着体を一時的に保持する機能を有する。そして熱硬化を経て最終的には耐衝撃性の高い硬化物を与えることができ、せん断強度にも優れ、厳しい高温度高湿度条件下においても十分な接着特性を保持し得る。  The adhesive layer made of the adhesive composition comprising the above components has pressure-sensitive adhesiveness and heat-curing property, and has a function of temporarily holding various adherends in an uncured state. Finally, a cured product having high impact resistance can be obtained through heat curing, and it has excellent shear strength and can maintain sufficient adhesive properties even under severe high temperature and high humidity conditions.

接着剤層は、上記の接着剤組成物を製膜してなる単層の接着シートであっても良いが、好ましくは上記接着剤組成物からなる接着剤層が支持体上に剥離可能に形成されてなる接着シートである。  The adhesive layer may be a single-layer adhesive sheet formed by forming the above-mentioned adhesive composition, but preferably the adhesive layer made of the above-mentioned adhesive composition is formed on the support so as to be peelable. This is an adhesive sheet.

(接着シート)
以下、接着剤層が支持体上に剥離可能に形成されてなる接着シートを例にとり、接着剤組成物の好適態様および使用態様について説明する。接着剤層が支持体上に剥離可能に形成されてなる接着シートの使用に際して、接着剤層をウエハ、チップ等の被着体に接着し、支持体を剥離して、接着剤層を被着体に転写する。本発明に係る接着シートの形状は、テープ状、ラベル状などあらゆる形状をとり得る。
(Adhesive sheet)
Hereinafter, preferred embodiments and usage modes of the adhesive composition will be described by taking an adhesive sheet in which an adhesive layer is detachably formed on a support. When using an adhesive sheet in which the adhesive layer is formed so as to be peelable on the support, the adhesive layer is adhered to an adherend such as a wafer or chip, the support is peeled off, and the adhesive layer is attached. Transfer to the body. The shape of the adhesive sheet according to the present invention can be any shape such as a tape shape or a label shape.

接着シートの支持体としては、たとえば、ポリエチレンフィルム、ポリプロピレンフィルム、ポリブテンフィルム、ポリブタジエンフィルム、ポリメチルペンテンフィルム、ポリ塩化ビニルフィルム、塩化ビニル共重合体フィルム、ポリエチレンテレフタレートフィルム、ポリエチレンナフタレートフィルム、ポリブチレンテレフタレートフィルム、ポリウレタンフィルム、エチレン酢酸ビニル共重合体フィルム、アイオノマー樹脂フィルム、エチレン・(メタ)アクリル酸共重合体フィルム、エチレン・(メタ)アクリル酸エステル共重合体フィルム、ポリスチレンフィルム、ポリカーボネートフィルム、ポリイミドフィルム、フッ素樹脂フィルムなどのフィルムが用いられる。またこれらの架橋フィルムも用いられる。さらにこれらの積層フィルムであってもよい。また、これらを着色したフィルムを用いることができる。支持体の有する紫外線、可視光等の放射線の透過性は、その用途に応じて適当な程度のものが選択される。  Examples of the support for the adhesive sheet include polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, and polybutylene. Terephthalate film, polyurethane film, ethylene vinyl acetate copolymer film, ionomer resin film, ethylene / (meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, polystyrene film, polycarbonate film, polyimide A film such as a film or a fluororesin film is used. These crosslinked films are also used. Furthermore, these laminated films may be sufficient. Moreover, the film which colored these can be used. As for the transparency of radiation such as ultraviolet light and visible light, which the support has, an appropriate degree is selected according to its use.

本発明に係る接着シートは、各種の被着体に貼付され、被着体に所要の加工を施した後、接着剤層は、被着体に固着残存させて支持体から剥離される。すなわち、接着剤層を、支持体から被着体に転写する工程を含むプロセスに使用される。このため、支持体が粘着処理されていない場合は、支持体の接着剤層に接する面の表面張力は、好ましくは40mN/m以下、さらに好ましくは37mN/m以下、特に好ましくは35mN/m以下である。下限値は通常25mN/m程度である。このような表面張力が低い支持体は、材質を適宜に選択して得ることが可能であるし、また支持体の表面に剥離剤を塗布して剥離処理を施すことで得ることもできる。  The adhesive sheet according to the present invention is affixed to various adherends, and after subjecting the adherend to necessary processing, the adhesive layer is left on the adherend to be peeled off from the support. That is, it is used for a process including a step of transferring an adhesive layer from a support to an adherend. For this reason, when the support is not subjected to pressure-sensitive adhesive treatment, the surface tension of the surface in contact with the adhesive layer of the support is preferably 40 mN / m or less, more preferably 37 mN / m or less, and particularly preferably 35 mN / m or less. It is. The lower limit is usually about 25 mN / m. Such a support having a low surface tension can be obtained by appropriately selecting the material, and can also be obtained by applying a release agent to the surface of the support and performing a release treatment.

支持体の剥離処理に用いられる剥離剤としては、アルキッド系、シリコーン系、フッ素系、不飽和ポリエステル系、ポリオレフィン系、ワックス系などが用いられるが、特にアルキッド系、シリコーン系、フッ素系の剥離剤が耐熱性を有するので好ましい。  As the release agent used for the release treatment of the support, alkyd type, silicone type, fluorine type, unsaturated polyester type, polyolefin type, wax type, etc. are used, and in particular, alkyd type, silicone type, fluorine type release agent. Is preferable because it has heat resistance.

上記の剥離剤を用いて支持体の表面を剥離処理するためには、剥離剤をそのまま無溶剤で、または溶剤希釈やエマルション化して、グラビアコーター、メイヤーバーコーター、エアナイフコーター、ロールコーターなどにより塗布して、常温もしくは加熱または電子線硬化させたり、ウェットラミネーションやドライラミネーション、熱溶融ラミネーション、溶融押出ラミネーション、共押出加工などで積層体を形成すればよい。  In order to release the surface of the support using the release agent described above, the release agent can be applied directly with a gravure coater, Mayer bar coater, air knife coater, roll coater, etc. without solvent, or by solvent dilution or emulsion. Then, the laminate may be formed by room temperature or heating or electron beam curing, wet lamination, dry lamination, hot melt lamination, melt extrusion lamination, coextrusion processing, or the like.

支持体は、粘着剤層を備える粘着シートであってもよい。粘着シートは、上記のような樹脂フィルム上に粘着剤層を有し、粘着剤層上に、前記接着剤層が剥離可能に積層される。したがって、粘着シートの粘着剤層は、再剥離性を有する公知の粘着剤から構成することができ、紫外線硬化型、加熱発泡型、水膨潤型、弱粘型等の粘着剤を選択することで、接着剤層の剥離を容易とすることができる。  The support may be a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer. The pressure-sensitive adhesive sheet has a pressure-sensitive adhesive layer on the resin film as described above, and the adhesive layer is detachably laminated on the pressure-sensitive adhesive layer. Therefore, the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet can be composed of a known pressure-sensitive adhesive having removability, and by selecting a pressure-sensitive adhesive such as an ultraviolet curable type, a heat-foaming type, a water swelling type, or a weakly viscous type. The adhesive layer can be easily peeled off.

また、接着シートは、支持体および接着剤層が、予め被着体(半導体ウエハ等)と同形状またはウエハ形状よりも大きい同心円状に型抜きされてなる形状であってもよい。特に、支持体および接着剤層からなる積層体が、長尺の支持体上に保持された形態であることが好ましい。  Further, the adhesive sheet may have a shape in which the support and the adhesive layer are previously punched in the same shape as the adherend (semiconductor wafer or the like) or in a concentric shape larger than the wafer shape. In particular, the laminate composed of the support and the adhesive layer is preferably in a form held on a long support.

支持体の厚さは、通常は10〜500μm、好ましくは15〜300μm、特に好ましくは20〜250μm程度である。支持体が粘着シートである場合には、通常支持体の厚さにおいて1〜50μm程度の厚さを粘着剤からなる層が占める。また、接着剤層の厚みは、通常は2〜500μm、好ましくは6〜300μm、特に好ましくは10〜150μm程度である。  The thickness of the support is usually 10 to 500 μm, preferably 15 to 300 μm, particularly preferably about 20 to 250 μm. When the support is an adhesive sheet, the layer made of the adhesive usually occupies a thickness of about 1 to 50 μm in the thickness of the support. Moreover, the thickness of an adhesive bond layer is 2-500 micrometers normally, Preferably it is 6-300 micrometers, Most preferably, it is about 10-150 micrometers.

接着シートには、使用前に接着剤層や粘着シートの粘着剤、以下に述べる治具への固定用の粘着剤層等を保護するために、接着剤層の上面に剥離フィルムを積層しておいてもよい。該剥離フィルムは、ポリエチレンテレフタレートフィルムやポリプロピレンフィルムなどのプラスチック材料にシリコーン樹脂などの剥離剤が塗布されているものが使用される。また、接着シートの表面外周部には、リングフレームなどの他の治具を固定するために別途粘着剤層や粘着テープが設けられていてもよい。  In order to protect the adhesive layer, the adhesive of the adhesive sheet, the adhesive layer for fixing to the jig described below, etc., a release film is laminated on the upper surface of the adhesive layer before use. It may be left. As the release film, one in which a release agent such as a silicone resin is applied to a plastic material such as a polyethylene terephthalate film or a polypropylene film is used. In addition, an adhesive layer or an adhesive tape may be separately provided on the outer peripheral portion of the surface of the adhesive sheet in order to fix other jigs such as a ring frame.

接着シートの製造方法は、特に限定はされず、支持体上に、接着剤組成物を塗布乾燥し、接着剤層を形成することで製造してもよく、また接着剤層を上述の接着剤層を保護するための剥離フィルム上に設け、これを上記支持体に転写することで製造してもよい。  The method for producing the adhesive sheet is not particularly limited, and may be produced by applying and drying an adhesive composition on a support to form an adhesive layer. You may manufacture by providing on the peeling film for protecting a layer, and transferring this to the said support body.

次に本発明に係る接着シートの利用方法について、該接着シートを半導体装置の製造に適用した場合を例にとって説明する。  Next, a method of using the adhesive sheet according to the present invention will be described taking as an example the case where the adhesive sheet is applied to the manufacture of a semiconductor device.

(半導体装置の製造方法)
本発明に係る半導体装置の製造方法は、上記接着シートの接着剤層に半導体ウエハを貼着し、該半導体ウエハおよび接着剤層をダイシングして半導体チップとし、該半導体チップ裏面に接着剤層を固着残存させて支持体から剥離し、該半導体チップを有機基板やリードフレームのダイパッド部上、またはチップを積層する場合に別の半導体チップ上に接着剤層を介して載置する工程を含む。
(Method for manufacturing semiconductor device)
In the method for manufacturing a semiconductor device according to the present invention, a semiconductor wafer is attached to the adhesive layer of the adhesive sheet, the semiconductor wafer and the adhesive layer are diced into semiconductor chips, and the adhesive layer is formed on the back surface of the semiconductor chip. And a step of leaving the semiconductor chip on the die pad portion of the organic substrate or the lead frame, or placing the semiconductor chip on another semiconductor chip via an adhesive layer when the chip is stacked.

以下、本発明に係る半導体装置の製造方法について詳述する。
本発明に係る半導体装置の製造方法においては、まず、表面に回路が形成され、裏面が研削された半導体ウエハを準備する。
Hereinafter, a method for manufacturing a semiconductor device according to the present invention will be described in detail.
In the method for manufacturing a semiconductor device according to the present invention, first, a semiconductor wafer having a circuit formed on the front surface and a ground back surface is prepared.

半導体ウエハはシリコンウエハであってもよく、またガリウム・砒素などの化合物半導体ウエハであってもよい。ウエハ表面への回路の形成はエッチング法、リフトオフ法などの従来より汎用されている方法を含む様々な方法により行うことができる。次いで、半導体ウエハの回路面の反対面(裏面)を研削する。研削法は特に限定はされず、グラインダーなどを用いた公知の手段で研削してもよい。裏面研削時には、表面の回路を保護するために回路面に、表面保護シートと呼ばれる粘着シートを貼付する。裏面研削は、ウエハの回路面側(すなわち表面保護シート側)をチャックテーブル等により固定し、回路が形成されていない裏面側をグラインダーにより研削する。ウエハの研削後の厚みは特に限定はされないが、通常は20〜500μm程度である。  The semiconductor wafer may be a silicon wafer or a compound semiconductor wafer such as gallium / arsenic. Formation of a circuit on the wafer surface can be performed by various methods including conventionally used methods such as an etching method and a lift-off method. Next, the opposite surface (back surface) of the circuit surface of the semiconductor wafer is ground. The grinding method is not particularly limited, and grinding may be performed by a known means using a grinder or the like. At the time of back surface grinding, an adhesive sheet called a surface protection sheet is attached to the circuit surface in order to protect the circuit on the surface. In the back surface grinding, the circuit surface side (that is, the surface protection sheet side) of the wafer is fixed by a chuck table or the like, and the back surface side on which no circuit is formed is ground by a grinder. The thickness of the wafer after grinding is not particularly limited, but is usually about 20 to 500 μm.

次いで、リングフレームおよび半導体ウエハの裏面側を本発明に係る接着シートの接着剤層上に載置し、軽く押圧し、場合によって熱を加えて接着剤層を軟化させながら半導体ウエハを固定する。次いで、接着剤層にエネルギー線重合性化合物(F)が配合されている場合には、接着剤層に支持体側からエネルギー線を照射し、エネルギー線重合性化合物(F)を硬化し、接着剤層の凝集力を上げ、接着剤層と支持体との間の接着力を低下させてもよい。照射されるエネルギー線としては、紫外線(UV)または電子線(EB)等が挙げられ、好ましくは紫外線が用いられる。次いで、ダイシングソーなどの切断手段を用いて、上記の半導体ウエハおよび接着剤層を切断し半導体チップを得る。この際の切断深さは、半導体ウエハの厚みと、接着剤層の厚みとの合計およびダイシングソーの磨耗分を加味した深さにし、接着剤層もチップと同サイズに切断する。なお、エネルギー線照射は、半導体ウエハの貼付後、半導体チップの剥離(ピックアップ)前のいずれの段階で行ってもよく、たとえばダイシングの後に行ってもよく、また下記のエキスパンド工程の後に行ってもよい。さらにエネルギー線照射を複数回に分けて行ってもよい。  Next, the back side of the ring frame and the semiconductor wafer is placed on the adhesive layer of the adhesive sheet according to the present invention, lightly pressed, and heat is applied in some cases to fix the semiconductor wafer while softening the adhesive layer. Next, when the energy ray polymerizable compound (F) is blended in the adhesive layer, the energy ray polymerizable compound (F) is cured by irradiating the adhesive layer with energy rays from the support side. The cohesive force of the layer may be increased, and the adhesive force between the adhesive layer and the support may be reduced. Examples of the energy rays to be irradiated include ultraviolet rays (UV) and electron beams (EB), and preferably ultraviolet rays are used. Next, the semiconductor wafer and the adhesive layer are cut using a cutting means such as a dicing saw to obtain a semiconductor chip. The cutting depth at this time is a depth that takes into account the sum of the thickness of the semiconductor wafer and the adhesive layer and the wear of the dicing saw, and the adhesive layer is also cut to the same size as the chip. The energy beam irradiation may be performed at any stage after the semiconductor wafer is pasted and before the semiconductor chip is peeled off (pickup). For example, the irradiation may be performed after dicing or after the following expanding step. Good. Further, the energy beam irradiation may be performed in a plurality of times.

次いで必要に応じ、接着シートのエキスパンドを行うと、半導体チップ間隔が拡張し、半導体チップのピックアップをさらに容易に行えるようになる。この際、接着剤層と支持体との間にずれが発生することになり、接着剤層と支持体との間の接着力が減少し、半導体チップのピックアップ性が向上する。このようにして半導体チップのピックアップを行うと、切断された接着剤層を半導体チップ裏面に固着残存させて支持体から剥離することができる。  Then, if necessary, when the adhesive sheet is expanded, the interval between the semiconductor chips is expanded, and the semiconductor chips can be picked up more easily. At this time, a deviation occurs between the adhesive layer and the support, the adhesive force between the adhesive layer and the support is reduced, and the pick-up property of the semiconductor chip is improved. When the semiconductor chip is picked up in this manner, the cut adhesive layer can be adhered to the back surface of the semiconductor chip and peeled off from the support.

次いで接着剤層を介して半導体チップを、チップ搭載部であるリードフレームのダイパッド上または別の半導体チップ(下段チップ)表面に載置する。チップ搭載部は、接着剤層の密着性を向上させるために、半導体チップを載置する前に加熱するか載置直後に加熱される。加熱温度は、通常は80〜200℃、好ましくは100〜180℃であり、加熱時間は、通常は0.1秒〜5分、好ましくは0.5秒〜3分である。また、載置に際しての加圧の圧力は、通常1kPa〜200MPaである。  Next, the semiconductor chip is placed on the die pad of the lead frame which is the chip mounting portion or on the surface of another semiconductor chip (lower chip) through the adhesive layer. In order to improve the adhesiveness of the adhesive layer, the chip mounting portion is heated before mounting the semiconductor chip or heated immediately after mounting. The heating temperature is usually 80 to 200 ° C, preferably 100 to 180 ° C, and the heating time is usually 0.1 seconds to 5 minutes, preferably 0.5 seconds to 3 minutes. Moreover, the pressure of pressurization at the time of mounting is usually 1 kPa to 200 MPa.

半導体チップをチップ搭載部に載置した後、後述するような樹脂封止での加熱を利用した接着剤層の本硬化を待たず、樹脂封止前に加熱を行うことにより接着剤層を本硬化させてもよい。この際の加熱条件は、上記加熱温度の範囲であって、加熱時間は通常1〜180分、好ましくは10〜120分である。  After the semiconductor chip is placed on the chip mounting portion, the adhesive layer is removed by heating before resin sealing without waiting for the main curing of the adhesive layer using heating in resin sealing as described later. It may be cured. The heating conditions at this time are in the above heating temperature range, and the heating time is usually 1 to 180 minutes, preferably 10 to 120 minutes.

また、載置後の加熱処理は行わずに仮接着状態としておき、パッケージ製造において通常行われる樹脂封止での加熱を利用して接着剤層を硬化させてもよい。このような工程を経ることで、接着剤層が硬化し、半導体チップとチップ搭載部とを強固に接着することができる。接着剤層はダイボンド条件下では流動化しているため、チップ搭載部の凹凸にも十分に埋め込まれ、ボイドの発生を防止できパッケージの信頼性が高くなる。この場合、接着剤層を介してチップ搭載部に搭載された半導体チップは、接着剤層が硬化前の状態でワイヤーボンディング工程を経ることとなる。このようなプロセスを採用した場合、ワイヤーボンディングにおける加熱により、接着剤層の熱硬化に寄与する成分の反応が一部進行し、半導体装置におけるパッケージ信頼性の低下が懸念される。しかしながら、本発明の接着剤組成物を用いることで、接着剤層のチップへの接着性が向上し、パッケージ信頼性が維持される傾向がある。  Alternatively, the adhesive layer may be cured by using heat in resin sealing that is normally performed in package manufacturing, without temporarily performing the heat treatment after placement. Through such a process, the adhesive layer is cured, and the semiconductor chip and the chip mounting portion can be firmly bonded. Since the adhesive layer is fluidized under die-bonding conditions, the adhesive layer is sufficiently embedded in the unevenness of the chip mounting portion, and generation of voids can be prevented and the reliability of the package is improved. In this case, the semiconductor chip mounted on the chip mounting portion via the adhesive layer is subjected to a wire bonding step in a state before the adhesive layer is cured. When such a process is adopted, the reaction of components contributing to the thermosetting of the adhesive layer partly proceeds due to heating in wire bonding, and there is a concern that the package reliability in the semiconductor device may be lowered. However, by using the adhesive composition of the present invention, the adhesiveness of the adhesive layer to the chip tends to be improved, and the package reliability tends to be maintained.

本発明の接着剤組成物および接着シートは、上記のような使用方法の他、半導体化合物、ガラス、セラミックス、金属などの接着に使用することもできる。  The adhesive composition and adhesive sheet of the present invention can be used for bonding semiconductor compounds, glass, ceramics, metals, etc., in addition to the above-described methods of use.

以下、本発明を実施例により説明するが、本発明はこれら実施例に限定されるものではない。なお、以下の実施例および比較例において、<GPC測定>および<耐IRリフロー性評価>は次のように行った。  EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to these Examples. In the following examples and comparative examples, <GPC measurement> and <IR reflow resistance evaluation> were performed as follows.

<GPC測定>
各例で使用するアクリル重合体について、ゲルパーミエーションクロマトグラフィー(GPC)法により、標準ポリスチレン換算の重量平均分子量Mw、数平均分子量Mnを測定し、また測定値から分子量分布(Mw/Mn)を求めた。
測定装置:東ソー社製の高速GPC装置「HLC−8120GPC」に、高速カラム「TSK gurd column HXL−H」、「TSK Gel GMHXL」、「TSK Gel G2000 HXL」(以上、全て東ソー社製)をこの順序で連結して測定した。
カラム温度:40℃、送液速度:1.0mL/分、検出器:示差屈折率計
<GPC measurement>
For the acrylic polymer used in each example, the weight average molecular weight Mw and the number average molecular weight Mn in terms of standard polystyrene are measured by gel permeation chromatography (GPC), and the molecular weight distribution (Mw / Mn) is determined from the measured values. Asked.
Measuring device: Tosoh's high-speed GPC device "HLC-8120GPC", high-speed columns "TSK gold column H XL- H", "TSK Gel GMH XL ", "TSK Gel G2000 H XL " ) In this order and measured.
Column temperature: 40 ° C., liquid feed rate: 1.0 mL / min, detector: differential refractometer

<耐IRリフロー性評価>
(半導体チップの製造)
ドライポリッシュ仕上げシリコンウエハ(150mm径, 厚さ75μm)の研磨面に、実施例および比較例の接着シートの貼付をテープマウンター(リンテック社製, Adwill
RAD2500)により行い、ウエハダイシング用リングフレームに固定した。次いで、ダイシング装置(株式会社ディスコ製, DFD651)を使用して8mm×8mmのチップサイズにダイシングした。ダイシングの際の切り込み量は、支持体を20μm切り込むようにした。
<IR reflow resistance evaluation>
(Manufacture of semiconductor chips)
A tape mounter (manufactured by Lintec Corporation, Adwill) applies the adhesive sheets of Examples and Comparative Examples to the polished surface of a dry polished silicon wafer (150 mm diameter, 75 μm thick).
RAD2500) and fixed to a ring frame for wafer dicing. Next, the wafer was diced into a chip size of 8 mm × 8 mm using a dicing machine (Disco Corporation, DFD651). The amount of cut during dicing was such that the support was cut by 20 μm.

(半導体パッケージの製造)
基板として銅箔張り積層板(三菱ガス化学株式会社製CCL-HL830)の銅箔(18μm厚)に回路パターンが形成され、パターン上にソルダーレジスト(太陽インキ製PSR-4000 AUS303)を有している基板を用いた(株式会社ちの技研製LN001E−001 PCB(Au)AUS303)。上記で得た接着シート上のチップを接着剤層とともに支持体から取り上げ、基板上に、接着剤層を介して120℃, 250gf, 0.5秒間の条件で圧着し、さらにチップの上に接着剤を介して同条件で圧着を行った。モールド樹脂(京セラケミカル株式会社製KE-1100AS3)で封止厚400μmになるように封止し (封止装置 アピックヤマダ株式会社製MPC-06M TriAl Press)、175℃5時間で樹脂を硬化させた。ついで、封止された基板をダイシングテープ(リンテック株式会社製Adwill D-510T)に貼付して、ダイシング装置(株式会社ディスコ製, DFD651)を使用して8mm×8mmサイズにダイシングすることで信頼性評価用の半導体パッケージを得た。
(Manufacture of semiconductor packages)
A circuit pattern is formed on a copper foil (18 μm thickness) of a copper foil-clad laminate (CCL-HL830 manufactured by Mitsubishi Gas Chemical Co., Ltd.) as a substrate, and a solder resist (PSR-4000 AUS303 made by Taiyo Ink) is provided on the pattern. (LN001E-001 PCB (Au) AUS303, manufactured by Chino Giken Co., Ltd.). The chip on the adhesive sheet obtained above is picked up from the support together with the adhesive layer, and is pressure-bonded onto the substrate through the adhesive layer at 120 ° C., 250 gf, for 0.5 seconds, and further adhered onto the chip. Crimping was performed under the same conditions via an agent. Sealing was performed with a mold resin (KE-1100AS3 manufactured by Kyocera Chemical Co., Ltd.) so as to have a sealing thickness of 400 μm (sealing device MPC-06M TriAl Press manufactured by Apic Yamada Co., Ltd.), and the resin was cured at 175 ° C. for 5 hours. Next, the sealed substrate is affixed to a dicing tape (Adwill D-510T manufactured by Lintec Co., Ltd.), and dicing into 8 mm x 8 mm size using a dicing apparatus (Disco Co., Ltd., DFD651). A semiconductor package for evaluation was obtained.

(半導体パッケージ表面実装性の評価)
得られた半導体パッケージを85℃,60%RH条件下に168時間放置し、吸湿させた後、最高温度260℃加熱時間1分間のIRリフロー(リフロー炉:相模理工製WL-15-20DNX型)を3回行なった際に接合部の浮き・剥がれの有無、パッケージクラック発生の有無を走査型超音波探傷装置(日立建機ファインテック株式会社製Hye-Focus)および断面観察により評価した。基板/半導体チップ接合部に0.5mm以上の剥離を観察した場合を「不良」と判断して、パッケージを27個試験に投入し剥離が発生しなかった良品の個数を数えた。
(Evaluation of semiconductor package surface mountability)
The obtained semiconductor package was left to stand for 168 hours at 85 ° C. and 60% RH to absorb moisture, and then IR reflow with a maximum temperature of 260 ° C. for 1 minute (Reflow oven: WL-15-20DNX type, manufactured by Sagami Riko) 3 times, the presence / absence of floating / peeling of the joint portion and occurrence of package cracks were evaluated by a scanning ultrasonic flaw detector (Hye-Focus manufactured by Hitachi Construction Machinery Finetech Co., Ltd.) and cross-sectional observation. A case where peeling of 0.5 mm or more at the substrate / semiconductor chip junction was observed was judged as “bad”, and 27 packages were put into the test, and the number of good products in which peeling did not occur was counted.

<TERP法によるアクリル重合体の合成例>
単量体としてメチルアクリレート(MA、東京化成(株)製)と2−ヒドロキシエチルアクリレート(HEA、東京化成(株)製)とを、質量比95:5の割合で用い、以下のとおり重合を行い、MA/HEAのランダム共重合体からなるアクリル重合体(A−1)を製造した。まず、アルゴン置換したグローブボックス内で、エチル―2―メチル―2―n―ブチルテラニル―プロピオネート37.7μL、メチルアクリレート(同上)133g、2−ヒドロキシエチルアクリレート(同上)7.0g及び2,2’−アゾビス(イソブチルニトリル)(AIBN、大塚化学(株)製)8.1mgを60℃で20時間反応させた。
<Synthesis example of acrylic polymer by TERP method>
As monomers, methyl acrylate (MA, manufactured by Tokyo Chemical Industry Co., Ltd.) and 2-hydroxyethyl acrylate (HEA, manufactured by Tokyo Chemical Industry Co., Ltd.) were used at a mass ratio of 95: 5, and polymerization was performed as follows. And an acrylic polymer (A-1) made of a random copolymer of MA / HEA was produced. First, 37.7 μL of ethyl-2-methyl-2-n-butylteranyl-propionate, 133 g of methyl acrylate (same as above), 7.0 g of 2-hydroxyethyl acrylate (same as above) and 2,2 ′ in a glove box substituted with argon. -8.1 mg of azobis (isobutylnitrile) (AIBN, manufactured by Otsuka Chemical Co., Ltd.) was reacted at 60 ° C for 20 hours.

反応終了後、反応器をグローブボックスから取り出し、酢酸エチル500mlに溶解した後、そのポリマー溶液を活性アルミナ[和光純薬工業株式会社製]で作製したカラムに通した。ポリマー溶液の粘度が10,000mPa・s(25℃)となるように酢酸エチルを添加した。得られたポリマーの固形分は17.3質量%であった。また、エチル−2−メチル−2−n−ブチルテラニル−プロピオネート及びAIBNの添加量、並びに重合時間を調整する以外はアクリル重合体(A−1)と同様にしてリビングラジカル重合により、アクリル重合体(A−2),(A−3),および(A−5)を製造した。  After completion of the reaction, the reactor was taken out of the glove box and dissolved in 500 ml of ethyl acetate, and then the polymer solution was passed through a column made of activated alumina [manufactured by Wako Pure Chemical Industries, Ltd.]. Ethyl acetate was added so that the viscosity of the polymer solution was 10,000 mPa · s (25 ° C.). The solid content of the obtained polymer was 17.3% by mass. In addition, the acrylic polymer (A) was prepared by living radical polymerization in the same manner as the acrylic polymer (A-1) except that the addition amount of ethyl-2-methyl-2-n-butylterranyl-propionate and AIBN and the polymerization time were adjusted. A-2), (A-3), and (A-5) were produced.

<接着剤組成物>
接着剤組成物を構成する各成分を下記に示す。
(A)アクリル重合体:
(A−1)〜(A−3)上記の合成例により製造した、表2に示す重量平均分子量および分子量分布を示すアクリル重合体
(A−4)単量体の種類および質量割合が(A−1)と同じで、フリーラジカル重合法にて作製した表2に示す重量平均分子量および分子量分布を示すアクリル重合体
(A−5)上記のTERP法による合成例により製造した、表2に示す重量平均分子量および分子量分布を示すアクリル重合体
(A−6),(A−7)単量体の種類および質量割合が(A−1)と同じで、フリーラジカル重合法にて作製した表2に示す重量平均分子量および分子量分布を示すアクリル重合体
(B)エポキシ系熱硬化性化合物;ビスフェノールA型エポキシ樹脂(ジャパンエポキシレジン株式会社製エピコート828、エポキシ当量189g/eq)
(C)熱硬化剤;ノボラック型フェノール樹脂(昭和高分子株式会社製ショウノールBRG-556、フェノール性水酸基当量104g/eq)
(D)架橋剤;芳香族性ポリイソシアネート(日本ポリウレタン工業株式会社製コロネートL)
(E)硬化促進剤;イミダゾール(四国化成工業株式会社製キュアゾール2PHZ)
(H)カップリング剤;シランカップリング剤(三菱化学株式会社製MKCシリケートMSEP2)
(I-1)無機充填剤;日産化学社製 シリカゾルMEK-ST
(I-2)無機充填剤;日産化学社製 MEK-AC-4101
<Adhesive composition>
Each component which comprises an adhesive composition is shown below.
(A) Acrylic polymer:
(A-1) to (A-3) The types and mass ratios of acrylic polymer (A-4) monomers produced by the above synthesis examples and having the weight average molecular weight and molecular weight distribution shown in Table 2 are (A -1) Acrylic polymer having a weight average molecular weight and molecular weight distribution shown in Table 2 prepared by the free radical polymerization method (A-5) Manufactured by the above synthesis example by the TERP method, shown in Table 2. Table 2 produced by the free radical polymerization method in which the types and mass ratios of the acrylic polymer (A-6) and (A-7) monomers showing the weight average molecular weight and molecular weight distribution are the same as (A-1). Acrylic polymer (B) epoxy-based thermosetting compound having a weight average molecular weight and molecular weight distribution shown in FIG. 2; Bisphenol A type epoxy resin (Epicoat 828 manufactured by Japan Epoxy Resin Co., Ltd., epoxy equivalent 189 g / eq)
(C) Thermosetting agent: Novolac type phenolic resin (Showon High Polymer Co., Ltd. Shounol BRG-556, phenolic hydroxyl group equivalent 104 g / eq)
(D) Cross-linking agent; aromatic polyisocyanate (Nihon Polyurethane Industry Co., Ltd. Coronate L)
(E) Curing accelerator: Imidazole (Curesol 2PHZ manufactured by Shikoku Chemicals Co., Ltd.)
(H) Coupling agent; Silane coupling agent (MKC silicate MSEP2 manufactured by Mitsubishi Chemical Corporation)
(I-1) Inorganic filler; manufactured by Nissan Chemical Co., Ltd., silica sol MEK-ST
(I-2) Inorganic filler; MEK-AC-4101 manufactured by Nissan Chemical Co., Ltd.

(実施例および比較例)
(接着剤層)
上記各成分を表1に記載の量で配合し、接着剤組成物を得た。得られた組成物のメチルエチルケトン溶液(固形濃度61質量%)を、シリコーンで剥離処理された剥離フィルム(リンテック株式会社製、SP−PET381031)の剥離処理面上に乾燥後10μmの厚みになるように塗布、乾燥(乾燥条件:オーブンにて100℃、1分間)した後に支持体(ポリエチレンフィルム、厚さ100μm、表面張力33mN/m)と貼り合せて、接着剤層を支持体上に転写することで接着シートを得た。得られた接着シートの耐IRリフロー評価結果を表2に示す。

Figure 0006340004
Figure 0006340004
(Examples and Comparative Examples)
(Adhesive layer)
Each said component was mix | blended in the quantity of Table 1, and the adhesive composition was obtained. Methyl ethyl ketone solution (solid concentration 61 mass%) of the obtained composition was dried on the release-treated surface of a release film (SP-PET 381031 manufactured by Lintec Co., Ltd.) that was release-treated with silicone so that the thickness became 10 μm. After coating and drying (drying conditions: 100 ° C. in an oven for 1 minute), bonding to a support (polyethylene film, thickness 100 μm, surface tension 33 mN / m) and transferring the adhesive layer onto the support An adhesive sheet was obtained. Table 2 shows the IR reflow resistance evaluation results of the obtained adhesive sheet.
Figure 0006340004
Figure 0006340004

Claims (8)

有機テルル含有化合物を重合開始剤として用いるリビングラジカル重合法により、アクリル系モノマーを重合して得られる重量平均分子量(Mw)が35万以上のアクリル重合体(A)、エポキシ系熱硬化性樹脂(B)および熱硬化剤(C)を含む接着剤組成物。  An acrylic polymer (A) having a weight average molecular weight (Mw) of 350,000 or more obtained by polymerizing an acrylic monomer by a living radical polymerization method using an organic tellurium-containing compound as a polymerization initiator, an epoxy thermosetting resin ( An adhesive composition comprising B) and a thermosetting agent (C). さらに架橋剤(D)を含有し、アクリル重合体(A)が該架橋剤と反応する官能基を有する請求項1に記載の接着剤組成物。  The adhesive composition according to claim 1, further comprising a crosslinking agent (D), wherein the acrylic polymer (A) has a functional group that reacts with the crosslinking agent. 架橋剤(D)がイソシネート基を含有し、アクリル重合体(A)が水酸基を含有する請求項2に記載の接着剤組成物。  The adhesive composition according to claim 2, wherein the crosslinking agent (D) contains an isocyanate group and the acrylic polymer (A) contains a hydroxyl group. アクリル重合体(A)の重量平均分子量(Mw)が90万以下である請求項1〜3の何れかに記載の接着剤組成物。  The adhesive composition according to any one of claims 1 to 3, wherein the acrylic polymer (A) has a weight average molecular weight (Mw) of 900,000 or less. アクリル重合体(A)の分子量分布(Mw/Mn)が3以下である請求項1〜4の何れかに記載の接着剤組成物。  The adhesive composition according to any one of claims 1 to 4, wherein the acrylic polymer (A) has a molecular weight distribution (Mw / Mn) of 3 or less. 請求項1〜5の何れかに記載の接着剤組成物からなる単層接着フィルム。  The single layer adhesive film which consists of an adhesive composition in any one of Claims 1-5. 請求項1〜5の何れかに記載の接着剤組成物からなる接着剤層が、支持体上に形成されてなる接着シート。  An adhesive sheet in which an adhesive layer made of the adhesive composition according to claim 1 is formed on a support. 請求項7に記載の接着シートの接着剤層に半導体ウエハを貼付し、前記半導体ウエハをダイシングして半導体チップとし、前記半導体チップに接着剤層を固着残存させて支持体から剥離し、前記半導体チップをダイパッド部上または他の半導体チップ上に前記接着剤層を介して接着する工程を含む半導体装置の製造方法。  A semiconductor wafer is affixed to the adhesive layer of the adhesive sheet according to claim 7, the semiconductor wafer is diced to form a semiconductor chip, the adhesive layer remains fixed on the semiconductor chip and peels from the support, and the semiconductor A method for manufacturing a semiconductor device, comprising a step of bonding a chip onto a die pad portion or another semiconductor chip via the adhesive layer.
JP2015529629A 2013-08-02 2014-08-01 Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device Active JP6340004B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013161694 2013-08-02
JP2013161694 2013-08-02
PCT/JP2014/070364 WO2015016352A1 (en) 2013-08-02 2014-08-01 Adhesive composition, adhesive sheet, and method for producing semiconductor device

Publications (3)

Publication Number Publication Date
JPWO2015016352A6 JPWO2015016352A6 (en) 2017-03-02
JPWO2015016352A1 JPWO2015016352A1 (en) 2017-03-02
JP6340004B2 true JP6340004B2 (en) 2018-06-06

Family

ID=52431875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015529629A Active JP6340004B2 (en) 2013-08-02 2014-08-01 Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US10131824B2 (en)
JP (1) JP6340004B2 (en)
KR (2) KR102255547B1 (en)
CN (1) CN105358647B (en)
SG (1) SG11201600430WA (en)
TW (1) TWI654267B (en)
WO (1) WO2015016352A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI572886B (en) * 2015-09-02 2017-03-01 巴川製紙所股份有限公司 Protection film, film laminate and polarizing plate
JP2017090718A (en) * 2015-11-11 2017-05-25 旭化成株式会社 Pellicle
WO2018062287A1 (en) * 2016-09-30 2018-04-05 日東電工株式会社 Optical adhesive layer, manufacturing method of optical adhesive layer, optical film with adhesive layer, and image display device
WO2018117037A1 (en) * 2016-12-22 2018-06-28 日本ゼオン株式会社 Acrylic rubber, acrylic rubber composition, crosslinked acrylic rubber, and production method for acrylic rubber
JP6963024B2 (en) * 2017-10-27 2021-11-05 リンテック株式会社 Method for manufacturing protective film forming film, protective film forming composite sheet, and semiconductor chip
WO2019150433A1 (en) * 2018-01-30 2019-08-08 日立化成株式会社 Thermosetting resin composition, film-form adhesive, adhesive sheet, and method for producing semiconductor device
JP2022033064A (en) * 2018-12-19 2022-02-28 昭和電工マテリアルズ株式会社 Film-like adhesive, adhesive sheet, as well as semiconductor device, and its manufacturing method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3572653B2 (en) * 1994-02-03 2004-10-06 住友電気工業株式会社 Adhesive composition for flexible printed wiring boards
AU2001232298A1 (en) 2000-02-15 2001-08-27 Hitachi Chemical Co. Ltd. Adhesive composition, process for producing the same, adhesive film made with the same, substrate for semiconductor mounting, and semiconductor device
CN101421312B (en) * 2006-04-14 2011-02-09 大塚化学株式会社 Resin composition and heat-resistant adhesive
JP5213313B2 (en) * 2006-05-23 2013-06-19 リンテック株式会社 Adhesive composition, adhesive sheet and method for producing semiconductor device
JP5083556B2 (en) * 2007-06-21 2012-11-28 東亞合成株式会社 Living radical polymerization initiator and method for producing polymer
JP5500787B2 (en) 2008-06-03 2014-05-21 リンテック株式会社 Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device
JP5627961B2 (en) * 2009-09-07 2014-11-19 リンテック株式会社 Protective film and method for producing protective film
CN103959106B (en) * 2011-12-02 2015-09-09 夏普株式会社 Duplexer
WO2014192745A1 (en) * 2013-05-28 2014-12-04 リンテック株式会社 Adhesive agent composition, adhesive sheet, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
TWI654267B (en) 2019-03-21
CN105358647B (en) 2017-10-24
WO2015016352A1 (en) 2015-02-05
US20160160094A1 (en) 2016-06-09
KR20160039197A (en) 2016-04-08
KR20210059025A (en) 2021-05-24
TW201527459A (en) 2015-07-16
JPWO2015016352A1 (en) 2017-03-02
KR102346224B1 (en) 2021-12-31
KR102255547B1 (en) 2021-05-24
CN105358647A (en) 2016-02-24
SG11201600430WA (en) 2016-02-26
US10131824B2 (en) 2018-11-20

Similar Documents

Publication Publication Date Title
JP6340004B2 (en) Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device
KR101492629B1 (en) Adhesive composition, adhesive sheet and production process for semiconductor device
JP5917215B2 (en) Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device
JPWO2015016352A6 (en) Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device
TWI669363B (en) Reagent composition, adhesive sheet, and method of manufacturing semiconductor device
JP5774322B2 (en) Adhesive composition for semiconductor, adhesive sheet for semiconductor, and method for manufacturing semiconductor device
JP5005258B2 (en) Adhesive composition, adhesive sheet and method for producing semiconductor device
JP6833083B2 (en) Manufacturing method for film-like adhesives, adhesive sheets and semiconductor devices
KR101483308B1 (en) Adhesive composition, adhesive sheet and production process for semiconductor device
JP2012167174A (en) Adhesive composition, adhesive sheet, and method of manufacturing semiconductor device
JP2008231366A (en) Pressure-sensitive adhesive composition, pressure-sensitive adhesive sheet, and method for manufacturing semiconductor device
JP5237647B2 (en) Adhesive composition, adhesive sheet and method for producing semiconductor device
JP5005325B2 (en) Adhesive composition, adhesive sheet and method for producing semiconductor device
JP5662810B2 (en) Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device
JP5513734B2 (en) Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device
WO2013157567A1 (en) Adhesive composition, adhesive sheet and method for manufacturing semiconductor device
JP5414256B2 (en) Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device
JP2010189484A (en) Adhesive composition, adhesive sheet and method for manufacturing semiconductor device
JP5234594B2 (en) Adhesive composition, adhesive sheet and method for producing semiconductor device
JP5500787B2 (en) Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device
JP5426831B2 (en) Adhesive composition, adhesive sheet and method for producing semiconductor device
JP2009227892A (en) Tacky adhesive composition, tacky adhesive sheet, and method for producing semiconductor device
JP5877858B2 (en) Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170523

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180508

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180511

R150 Certificate of patent or registration of utility model

Ref document number: 6340004

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250