WO2009001732A1 - 半導体ウエハ研削方法とそれに用いる樹脂組成物及び保護シート - Google Patents

半導体ウエハ研削方法とそれに用いる樹脂組成物及び保護シート Download PDF

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Publication number
WO2009001732A1
WO2009001732A1 PCT/JP2008/061163 JP2008061163W WO2009001732A1 WO 2009001732 A1 WO2009001732 A1 WO 2009001732A1 JP 2008061163 W JP2008061163 W JP 2008061163W WO 2009001732 A1 WO2009001732 A1 WO 2009001732A1
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WIPO (PCT)
Prior art keywords
semiconductor wafer
wafer
backside
grinding
resin composition
Prior art date
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PCT/JP2008/061163
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English (en)
French (fr)
Inventor
Masanobu Kutsumi
Tomoyuki Kanai
Original Assignee
Denki Kagaku Kogyo Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo Kabushiki Kaisha filed Critical Denki Kagaku Kogyo Kabushiki Kaisha
Priority to JP2009520520A priority Critical patent/JP5517615B2/ja
Priority to CN2008800196560A priority patent/CN101681823B/zh
Publication of WO2009001732A1 publication Critical patent/WO2009001732A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

　回路面に３０μｍ以上の大きな凹凸を有する半導体ウエハの裏面を研削する方法を提供する。 　半導体ウエハの回路面側に前記半導体ウエハから剥離可能な樹脂層を介して保護シート又は固定用治具を設け、前記半導体ウエハの裏面を研削することを特徴とする半導体ウエハの研削方法。好ましくは、半導体ウエハの回路面側に、ウエハ厚さより浅い深さの溝を形成し、樹脂層を形成する樹脂組成物を全面に塗布し、ウエハ裏面を研削して個々のチップに分割する前記の半導体ウエハ研削方法。更に好ましくは、半導体ウエハの裏面を研削した後に、樹脂層を加熱して除去する前記の半導体ウエハ研削方法。
PCT/JP2008/061163 2007-06-22 2008-06-18 半導体ウエハ研削方法とそれに用いる樹脂組成物及び保護シート WO2009001732A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009520520A JP5517615B2 (ja) 2007-06-22 2008-06-18 半導体ウエハ研削方法とそれに用いる樹脂組成物及び保護シート
CN2008800196560A CN101681823B (zh) 2007-06-22 2008-06-18 半导体晶片磨削方法和在其中使用的树脂组合物以及保护片

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007164934 2007-06-22
JP2007-164951 2007-06-22
JP2007-164934 2007-06-22
JP2007164951 2007-06-22

Publications (1)

Publication Number Publication Date
WO2009001732A1 true WO2009001732A1 (ja) 2008-12-31

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Application Number Title Priority Date Filing Date
PCT/JP2008/061163 WO2009001732A1 (ja) 2007-06-22 2008-06-18 半導体ウエハ研削方法とそれに用いる樹脂組成物及び保護シート

Country Status (5)

Country Link
JP (1) JP5517615B2 (ja)
KR (1) KR20100032361A (ja)
CN (1) CN101681823B (ja)
TW (1) TWI469204B (ja)
WO (1) WO2009001732A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010267653A (ja) * 2009-05-12 2010-11-25 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2010278235A (ja) * 2009-05-28 2010-12-09 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2011046153A (ja) * 2009-08-28 2011-03-10 Disco Abrasive Syst Ltd 加工方法
CN102213917A (zh) * 2010-04-08 2011-10-12 东友精细化工有限公司 黑色感光性树脂组合物、用其制得的黑色矩阵及具有该黑色矩阵的彩色滤光片
JP2015133481A (ja) * 2013-12-12 2015-07-23 株式会社半導体エネルギー研究所 剥離方法及び剥離装置
JP2016115800A (ja) * 2014-12-15 2016-06-23 株式会社ディスコ ウエーハの加工方法
JP2018190855A (ja) * 2017-05-09 2018-11-29 株式会社ディスコ ウェーハの加工方法
JPWO2018135492A1 (ja) * 2017-01-23 2019-12-19 東京エレクトロン株式会社 半導体基板の処理方法及び半導体基板の処理装置
TWI708333B (zh) * 2018-06-21 2020-10-21 矽創電子股份有限公司 凸塊結構

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013067673A (ja) * 2011-09-20 2013-04-18 Hitachi Chemical Co Ltd 樹脂ペースト組成物及び半導体装置
JP2013084770A (ja) * 2011-10-11 2013-05-09 Disco Abrasive Syst Ltd ウェーハの研削方法
CN103065957B (zh) * 2012-12-27 2016-04-20 日月光半导体制造股份有限公司 半导体基板切割的装置及半导体晶圆切割的制造方法
JP2015233077A (ja) * 2014-06-10 2015-12-24 株式会社ディスコ ウエーハの加工方法
JP2016001677A (ja) * 2014-06-12 2016-01-07 株式会社ディスコ ウエーハの加工方法
JP2016174102A (ja) 2015-03-17 2016-09-29 株式会社東芝 半導体製造方法および積層体
CN106088146B (zh) * 2016-07-22 2018-12-18 中国建筑第八工程局有限公司 一种临时地连墙拆除施工方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270387A (ja) * 1997-03-26 1998-10-09 Sharp Corp 半導体装置の製造方法
JP2000234079A (ja) * 1999-02-15 2000-08-29 Nitta Ind Corp 半導体ウエハ加工用シート
JP2002343747A (ja) * 2001-05-17 2002-11-29 Lintec Corp ダイシングシート及びダイシング方法
JP2003113355A (ja) * 2001-10-03 2003-04-18 Bridgestone Corp 光硬化型仮固定用シート
JP2003201451A (ja) * 2002-01-09 2003-07-18 Sumitomo Bakelite Co Ltd 半導体加工用粘着シート
JP2004043762A (ja) * 2001-08-27 2004-02-12 Hitachi Chem Co Ltd 接着シート並びに半導体装置及びその製造方法
JP2004331743A (ja) * 2003-05-02 2004-11-25 Lintec Corp 粘着シートおよびその使用方法
JP2006245348A (ja) * 2005-03-03 2006-09-14 Sharp Corp 半導体装置の製造方法
JP2007046018A (ja) * 2005-08-12 2007-02-22 Denki Kagaku Kogyo Kk 粘着剤、それを用いた粘着シート、及び粘着シートを用いた電子部品製造方法。

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JPH05315304A (ja) * 1992-05-12 1993-11-26 Sony Corp ウエハの裏面研削方法
JPH07106285A (ja) * 1993-10-08 1995-04-21 Oki Electric Ind Co Ltd 半導体製造方法
JP3097619B2 (ja) * 1997-10-02 2000-10-10 日本電気株式会社 電界放射冷陰極の製造方法
US20020127821A1 (en) * 2000-12-28 2002-09-12 Kazuyuki Ohya Process for the production of thinned wafer
US20020160597A1 (en) * 2001-04-30 2002-10-31 Wen-Kun Yang Wafer level package and the process of the same
JP4427308B2 (ja) * 2003-12-10 2010-03-03 株式会社ディスコ 半導体ウェーハの分割方法
JP4993662B2 (ja) * 2005-05-12 2012-08-08 日東電工株式会社 ダイシング用粘着シート、及びそれを用いたダイシング方法
JP2007031494A (ja) * 2005-07-22 2007-02-08 Furukawa Electric Co Ltd:The ウエハ貼着用粘着シート
JP2007100064A (ja) * 2005-09-07 2007-04-19 Furukawa Electric Co Ltd:The ダイシング用粘着テープ

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270387A (ja) * 1997-03-26 1998-10-09 Sharp Corp 半導体装置の製造方法
JP2000234079A (ja) * 1999-02-15 2000-08-29 Nitta Ind Corp 半導体ウエハ加工用シート
JP2002343747A (ja) * 2001-05-17 2002-11-29 Lintec Corp ダイシングシート及びダイシング方法
JP2004043762A (ja) * 2001-08-27 2004-02-12 Hitachi Chem Co Ltd 接着シート並びに半導体装置及びその製造方法
JP2003113355A (ja) * 2001-10-03 2003-04-18 Bridgestone Corp 光硬化型仮固定用シート
JP2003201451A (ja) * 2002-01-09 2003-07-18 Sumitomo Bakelite Co Ltd 半導体加工用粘着シート
JP2004331743A (ja) * 2003-05-02 2004-11-25 Lintec Corp 粘着シートおよびその使用方法
JP2006245348A (ja) * 2005-03-03 2006-09-14 Sharp Corp 半導体装置の製造方法
JP2007046018A (ja) * 2005-08-12 2007-02-22 Denki Kagaku Kogyo Kk 粘着剤、それを用いた粘着シート、及び粘着シートを用いた電子部品製造方法。

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010267653A (ja) * 2009-05-12 2010-11-25 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2010278235A (ja) * 2009-05-28 2010-12-09 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2011046153A (ja) * 2009-08-28 2011-03-10 Disco Abrasive Syst Ltd 加工方法
CN102213917A (zh) * 2010-04-08 2011-10-12 东友精细化工有限公司 黑色感光性树脂组合物、用其制得的黑色矩阵及具有该黑色矩阵的彩色滤光片
CN102213917B (zh) * 2010-04-08 2013-03-27 东友精细化工有限公司 黑色感光性树脂组合物、用其制得的黑色矩阵及具有该黑色矩阵的彩色滤光片
JP2015133481A (ja) * 2013-12-12 2015-07-23 株式会社半導体エネルギー研究所 剥離方法及び剥離装置
JP2016115800A (ja) * 2014-12-15 2016-06-23 株式会社ディスコ ウエーハの加工方法
JPWO2018135492A1 (ja) * 2017-01-23 2019-12-19 東京エレクトロン株式会社 半導体基板の処理方法及び半導体基板の処理装置
JP2018190855A (ja) * 2017-05-09 2018-11-29 株式会社ディスコ ウェーハの加工方法
TWI708333B (zh) * 2018-06-21 2020-10-21 矽創電子股份有限公司 凸塊結構

Also Published As

Publication number Publication date
KR20100032361A (ko) 2010-03-25
JP5517615B2 (ja) 2014-06-11
CN101681823A (zh) 2010-03-24
TWI469204B (zh) 2015-01-11
CN101681823B (zh) 2012-05-23
TW200917353A (en) 2009-04-16
JPWO2009001732A1 (ja) 2010-08-26

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