WO2006060983A3 - Verfahren zum aufbringen einer klebstoffschicht auf dünngeschliffene halbleiterchips eines halbleiterwafers - Google Patents

Verfahren zum aufbringen einer klebstoffschicht auf dünngeschliffene halbleiterchips eines halbleiterwafers Download PDF

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Publication number
WO2006060983A3
WO2006060983A3 PCT/DE2005/002116 DE2005002116W WO2006060983A3 WO 2006060983 A3 WO2006060983 A3 WO 2006060983A3 DE 2005002116 W DE2005002116 W DE 2005002116W WO 2006060983 A3 WO2006060983 A3 WO 2006060983A3
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WO
WIPO (PCT)
Prior art keywords
adhesive layer
applying
semiconductor
semiconductor chips
semiconductor wafer
Prior art date
Application number
PCT/DE2005/002116
Other languages
English (en)
French (fr)
Other versions
WO2006060983A2 (de
Inventor
Simon Jerebic
Peter Strobel
Original Assignee
Infineon Technologies Ag
Simon Jerebic
Peter Strobel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Simon Jerebic, Peter Strobel filed Critical Infineon Technologies Ag
Priority to US11/721,067 priority Critical patent/US20100051190A1/en
Publication of WO2006060983A2 publication Critical patent/WO2006060983A2/de
Publication of WO2006060983A3 publication Critical patent/WO2006060983A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zum Aufbringen einer Klebstoffschicht (1) auf dünngeschliffene bzw. gedünnte Halbleiterchips (2) eines Halbleiterwafers (3). Dabei wird die Klebstoffschicht (1) mit Hilfe einer Klebstofffolie (4), die vollständig aus vorhärtbarem Klebstoff (10) aufgebaut ist, relativ früh in ein Verfahren zum Dünnschleifen, Trennen und Vereinzeln eines Halbleiterwafers zu gedünnten Halbleiterchips (2) eingebracht und schließlich in dem Halbleiterbauteil, in das der gedünnte Halbleiterchip (2) einzubauen ist, weiterverwendet.
PCT/DE2005/002116 2004-12-09 2005-11-23 Verfahren zum aufbringen einer klebstoffschicht auf dünngeschliffene halbleiterchips eines halbleiterwafers WO2006060983A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/721,067 US20100051190A1 (en) 2004-12-09 2005-11-23 Method for applying an adhesive layer on thin cut semiconductor chips of semiconductor wafers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004059599A DE102004059599B3 (de) 2004-12-09 2004-12-09 Verfahren zum Aufbringen einer Klebstoffschicht auf dünngeschliffene Halbleiterchips eines Halbleiterwafers
DE102004059599.2 2004-12-09

Publications (2)

Publication Number Publication Date
WO2006060983A2 WO2006060983A2 (de) 2006-06-15
WO2006060983A3 true WO2006060983A3 (de) 2006-09-21

Family

ID=36578263

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2005/002116 WO2006060983A2 (de) 2004-12-09 2005-11-23 Verfahren zum aufbringen einer klebstoffschicht auf dünngeschliffene halbleiterchips eines halbleiterwafers

Country Status (3)

Country Link
US (1) US20100051190A1 (de)
DE (1) DE102004059599B3 (de)
WO (1) WO2006060983A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7879691B2 (en) 2008-09-24 2011-02-01 Eastman Kodak Company Low cost die placement
JP2015119085A (ja) * 2013-12-19 2015-06-25 株式会社ディスコ デバイスウェーハの加工方法
US10150898B2 (en) 2014-05-28 2018-12-11 Xerox Corporation Use of epoxy film adhesive with high ink compatibility and thermal oxidative stability for printhead interstitial bonding in high density printheads
US9890306B2 (en) * 2014-05-28 2018-02-13 Xerox Corporation Use of epoxy film adhesive with high ink compatibility and thermal oxidative stability for printhead interstitial bonding in in high density printheads
TWI557831B (zh) * 2015-05-15 2016-11-11 友達光電股份有限公司 微組件的傳送方法
DE102018200656A1 (de) 2018-01-16 2019-07-18 Disco Corporation Verfahren zum Bearbeiten eines Wafers
DE102018128616A1 (de) * 2018-06-24 2019-12-24 Besi Switzerland Ag Vorrichtung und Verfahren zum Ablösen eines Chips von einer Klebefolie

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61210650A (ja) * 1985-03-15 1986-09-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH09283469A (ja) * 1996-04-17 1997-10-31 Matsushita Electron Corp 半導体装置の製造方法
JPH1126406A (ja) * 1997-07-01 1999-01-29 Lintec Corp ウエハ研削方法
JP2003324112A (ja) * 2002-04-30 2003-11-14 Lintec Corp 半導体装置の製造方法

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JPH0715087B2 (ja) * 1988-07-21 1995-02-22 リンテック株式会社 粘接着テープおよびその使用方法
SG52223A1 (en) * 1992-01-08 1998-09-28 Murata Manufacturing Co Component supply method
DE19921230B4 (de) * 1999-05-07 2009-04-02 Giesecke & Devrient Gmbh Verfahren zum Handhaben von gedünnten Chips zum Einbringen in Chipkarten
US6391220B1 (en) * 1999-08-18 2002-05-21 Fujitsu Limited, Inc. Methods for fabricating flexible circuit structures
DE10008273A1 (de) * 2000-02-23 2001-08-30 Bosch Gmbh Robert Verfahren und Vorrichtung zur Montage von durch Vereinzelung aus einem Rohstück erzeugbaren Kleinbauelementen auf einen Träger
JP3906962B2 (ja) * 2000-08-31 2007-04-18 リンテック株式会社 半導体装置の製造方法
DE10048881A1 (de) * 2000-09-29 2002-03-07 Infineon Technologies Ag Vorrichtung und Verfahren zum planen Verbinden zweier Wafer für ein Dünnschleifen und ein Trennen eines Produkt-Wafers
DE10159974C1 (de) * 2001-12-06 2003-10-23 Infineon Technologies Ag Halbleiterchip-Montageanlage mit einem Saugnippel zur Abnahme eines Halbleiterchips

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61210650A (ja) * 1985-03-15 1986-09-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH09283469A (ja) * 1996-04-17 1997-10-31 Matsushita Electron Corp 半導体装置の製造方法
JPH1126406A (ja) * 1997-07-01 1999-01-29 Lintec Corp ウエハ研削方法
JP2003324112A (ja) * 2002-04-30 2003-11-14 Lintec Corp 半導体装置の製造方法

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 046 (E - 479) 12 February 1987 (1987-02-12) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 02 30 January 1998 (1998-01-30) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 04 30 April 1999 (1999-04-30) *
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 12 5 December 2003 (2003-12-05) *

Also Published As

Publication number Publication date
WO2006060983A2 (de) 2006-06-15
US20100051190A1 (en) 2010-03-04
DE102004059599B3 (de) 2006-08-17

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