TWI463673B - 非揮發性奈米管二極體與非揮發性奈米管塊材及使用該等之系統以及製造該等之方法 - Google Patents
非揮發性奈米管二極體與非揮發性奈米管塊材及使用該等之系統以及製造該等之方法 Download PDFInfo
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- 239000002071 nanotube Substances 0.000 title claims description 1381
- 238000000034 method Methods 0.000 title description 774
- 239000004020 conductor Substances 0.000 claims description 262
- 239000004065 semiconductor Substances 0.000 claims description 249
- 239000000463 material Substances 0.000 claims description 178
- 239000004744 fabric Substances 0.000 claims description 143
- 239000000758 substrate Substances 0.000 claims description 141
- -1 RbSi 2 Inorganic materials 0.000 claims description 81
- 230000000638 stimulation Effects 0.000 claims description 55
- 238000004891 communication Methods 0.000 claims description 52
- 229910052782 aluminium Inorganic materials 0.000 claims description 45
- 229910008484 TiSi Inorganic materials 0.000 claims description 38
- 229910019001 CoSi Inorganic materials 0.000 claims description 36
- 229910052804 chromium Inorganic materials 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 26
- 229910052763 palladium Inorganic materials 0.000 claims description 24
- 229910052721 tungsten Inorganic materials 0.000 claims description 24
- 239000010405 anode material Substances 0.000 claims description 22
- 229910052697 platinum Inorganic materials 0.000 claims description 20
- 229910052709 silver Inorganic materials 0.000 claims description 19
- 229910052741 iridium Inorganic materials 0.000 claims description 18
- 230000004044 response Effects 0.000 claims description 14
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 claims description 13
- 229910016006 MoSi Inorganic materials 0.000 claims description 13
- 229910006249 ZrSi Inorganic materials 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 13
- 229910052742 iron Inorganic materials 0.000 claims description 13
- 229910021340 platinum monosilicide Inorganic materials 0.000 claims description 13
- 229910052701 rubidium Inorganic materials 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 229910052745 lead Inorganic materials 0.000 claims description 7
- 230000003389 potentiating effect Effects 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 239000004745 nonwoven fabric Substances 0.000 claims 2
- 239000002262 Schiff base Substances 0.000 claims 1
- 150000004753 Schiff bases Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 767
- 239000012212 insulator Substances 0.000 description 515
- 230000015654 memory Effects 0.000 description 499
- 210000004027 cell Anatomy 0.000 description 411
- 238000004519 manufacturing process Methods 0.000 description 366
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 224
- 229920005591 polysilicon Polymers 0.000 description 224
- 229910052751 metal Inorganic materials 0.000 description 93
- 239000002184 metal Substances 0.000 description 93
- 238000005530 etching Methods 0.000 description 90
- 238000000151 deposition Methods 0.000 description 89
- 230000008569 process Effects 0.000 description 89
- 229910052732 germanium Inorganic materials 0.000 description 62
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 61
- 238000005516 engineering process Methods 0.000 description 57
- 239000003989 dielectric material Substances 0.000 description 54
- 238000001020 plasma etching Methods 0.000 description 48
- 239000011521 glass Substances 0.000 description 45
- 238000003491 array Methods 0.000 description 42
- 229910052718 tin Inorganic materials 0.000 description 38
- 235000012431 wafers Nutrition 0.000 description 37
- 150000002739 metals Chemical class 0.000 description 36
- 230000002829 reductive effect Effects 0.000 description 34
- 238000003860 storage Methods 0.000 description 34
- 150000004772 tellurides Chemical class 0.000 description 34
- 239000013078 crystal Substances 0.000 description 33
- 230000008021 deposition Effects 0.000 description 33
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 32
- 229910052698 phosphorus Inorganic materials 0.000 description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 29
- 239000002019 doping agent Substances 0.000 description 29
- 239000011574 phosphorus Substances 0.000 description 29
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 28
- 229920000642 polymer Polymers 0.000 description 28
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 27
- 229910010165 TiCu Inorganic materials 0.000 description 27
- 150000004767 nitrides Chemical class 0.000 description 27
- 229910001258 titanium gold Inorganic materials 0.000 description 27
- 239000002033 PVDF binder Substances 0.000 description 26
- 229910004298 SiO 2 Inorganic materials 0.000 description 26
- 229910052785 arsenic Inorganic materials 0.000 description 26
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 26
- 229910019899 RuO Inorganic materials 0.000 description 25
- 229910004166 TaN Inorganic materials 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 25
- 238000002955 isolation Methods 0.000 description 25
- 229910001092 metal group alloy Inorganic materials 0.000 description 25
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 24
- 239000008433 xiaoji Substances 0.000 description 23
- 229910000575 Ir alloy Inorganic materials 0.000 description 22
- 229910000978 Pb alloy Inorganic materials 0.000 description 22
- 229910001128 Sn alloy Inorganic materials 0.000 description 22
- 229910001316 Ag alloy Inorganic materials 0.000 description 21
- 229910000846 In alloy Inorganic materials 0.000 description 21
- 229910001182 Mo alloy Inorganic materials 0.000 description 21
- 229910000990 Ni alloy Inorganic materials 0.000 description 21
- 229910001080 W alloy Inorganic materials 0.000 description 21
- 238000004806 packaging method and process Methods 0.000 description 21
- 230000001681 protective effect Effects 0.000 description 20
- 125000006850 spacer group Chemical group 0.000 description 20
- 230000007704 transition Effects 0.000 description 20
- 238000000059 patterning Methods 0.000 description 19
- 229910052737 gold Inorganic materials 0.000 description 18
- 230000009467 reduction Effects 0.000 description 18
- 230000002441 reversible effect Effects 0.000 description 18
- 229910001020 Au alloy Inorganic materials 0.000 description 17
- 229910000881 Cu alloy Inorganic materials 0.000 description 17
- 229910001252 Pd alloy Inorganic materials 0.000 description 17
- 239000011800 void material Substances 0.000 description 16
- 230000001965 increasing effect Effects 0.000 description 15
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 15
- 229910004541 SiN Inorganic materials 0.000 description 14
- 230000002708 enhancing effect Effects 0.000 description 14
- 229920000379 polypropylene carbonate Polymers 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- 229910000967 As alloy Inorganic materials 0.000 description 13
- 229910000599 Cr alloy Inorganic materials 0.000 description 13
- 229910000929 Ru alloy Inorganic materials 0.000 description 13
- 229910001069 Ti alloy Inorganic materials 0.000 description 13
- 238000013461 design Methods 0.000 description 13
- 229910052750 molybdenum Inorganic materials 0.000 description 13
- 239000005360 phosphosilicate glass Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000005507 spraying Methods 0.000 description 13
- 229910052719 titanium Inorganic materials 0.000 description 13
- 230000005669 field effect Effects 0.000 description 12
- 239000002059 nanofabric Substances 0.000 description 12
- 239000004593 Epoxy Substances 0.000 description 11
- 238000004528 spin coating Methods 0.000 description 11
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 238000001459 lithography Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 241000209094 Oryza Species 0.000 description 9
- 235000007164 Oryza sativa Nutrition 0.000 description 9
- 239000002041 carbon nanotube Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 230000006386 memory function Effects 0.000 description 9
- 235000009566 rice Nutrition 0.000 description 9
- 238000001878 scanning electron micrograph Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910021393 carbon nanotube Inorganic materials 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 8
- 210000004508 polar body Anatomy 0.000 description 8
- 229920000747 poly(lactic acid) Polymers 0.000 description 8
- JKUMLNOQXADSAD-UHFFFAOYSA-N [Bi].[P] Chemical compound [Bi].[P] JKUMLNOQXADSAD-UHFFFAOYSA-N 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 7
- 238000004549 pulsed laser deposition Methods 0.000 description 7
- 229910001260 Pt alloy Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 235000013339 cereals Nutrition 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 229920002799 BoPET Polymers 0.000 description 5
- 239000005041 Mylar™ Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000000670 limiting effect Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000011295 pitch Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- 229910001362 Ta alloys Inorganic materials 0.000 description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 4
- 229910052794 bromium Inorganic materials 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000012776 electronic material Substances 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052740 iodine Inorganic materials 0.000 description 4
- 239000011630 iodine Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 229910052747 lanthanoid Inorganic materials 0.000 description 3
- 150000002602 lanthanoids Chemical class 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910019044 CoSix Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 229910008486 TiSix Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000004936 stimulating effect Effects 0.000 description 2
- 239000003021 water soluble solvent Substances 0.000 description 2
- 102100022704 Amyloid-beta precursor protein Human genes 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 101000823051 Homo sapiens Amyloid-beta precursor protein Proteins 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 101000800760 Naja oxiana Short neurotoxin 1 Proteins 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910019847 RhSi Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical compound [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0064—Verifying circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/86—Masking faults in memories by using spares or by reconfiguring in serial access memories, e.g. shift registers, CCDs, bubble memories
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/29—Diodes comprising organic-inorganic heterojunctions
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0076—Write operation performed depending on read result
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/19—Memory cell comprising at least a nanowire and only two terminals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
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Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83643706P | 2006-08-08 | 2006-08-08 | |
| US83634306P | 2006-08-08 | 2006-08-08 | |
| US84058606P | 2006-08-28 | 2006-08-28 | |
| US85510906P | 2006-10-27 | 2006-10-27 | |
| US91838807P | 2007-03-16 | 2007-03-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200826302A TW200826302A (en) | 2008-06-16 |
| TWI463673B true TWI463673B (zh) | 2014-12-01 |
Family
ID=39082936
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096129308A TWI463673B (zh) | 2006-08-08 | 2007-08-08 | 非揮發性奈米管二極體與非揮發性奈米管塊材及使用該等之系統以及製造該等之方法 |
| TW096129300A TWI419163B (zh) | 2006-08-08 | 2007-08-08 | 使用非揮發性奈米管的記憶體元件與交叉點開關及其陣列 |
| TW096129304A TWI457923B (zh) | 2006-08-08 | 2007-08-08 | 具有可調整尺寸的二端奈米管開關之非依電性電阻式記憶體、閂鎖電路、及操作電路 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096129300A TWI419163B (zh) | 2006-08-08 | 2007-08-08 | 使用非揮發性奈米管的記憶體元件與交叉點開關及其陣列 |
| TW096129304A TWI457923B (zh) | 2006-08-08 | 2007-08-08 | 具有可調整尺寸的二端奈米管開關之非依電性電阻式記憶體、閂鎖電路、及操作電路 |
Country Status (5)
| Country | Link |
|---|---|
| EP (5) | EP2057633B1 (enExample) |
| JP (4) | JP5394923B2 (enExample) |
| KR (3) | KR101169499B1 (enExample) |
| TW (3) | TWI463673B (enExample) |
| WO (3) | WO2008021912A2 (enExample) |
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2007
- 2007-08-08 TW TW096129308A patent/TWI463673B/zh active
- 2007-08-08 WO PCT/US2007/075521 patent/WO2008021912A2/en not_active Ceased
- 2007-08-08 KR KR1020097004520A patent/KR101169499B1/ko active Active
- 2007-08-08 JP JP2009523985A patent/JP5394923B2/ja not_active Expired - Fee Related
- 2007-08-08 EP EP07840788A patent/EP2057633B1/en active Active
- 2007-08-08 TW TW096129300A patent/TWI419163B/zh active
- 2007-08-08 KR KR1020097004498A patent/KR101486406B1/ko active Active
- 2007-08-08 JP JP2009523984A patent/JP6114487B2/ja active Active
- 2007-08-08 EP EP07840800A patent/EP2070088A4/en not_active Withdrawn
- 2007-08-08 JP JP2009523981A patent/JP5410974B2/ja active Active
- 2007-08-08 EP EP09159276A patent/EP2104109A1/en not_active Withdrawn
- 2007-08-08 WO PCT/US2007/075506 patent/WO2008021900A2/en not_active Ceased
- 2007-08-08 WO PCT/US2007/075520 patent/WO2008021911A2/en not_active Ceased
- 2007-08-08 KR KR1020097004772A patent/KR101461688B1/ko active Active
- 2007-08-08 EP EP07840799A patent/EP2057683A4/en not_active Withdrawn
- 2007-08-08 TW TW096129304A patent/TWI457923B/zh not_active IP Right Cessation
- 2007-08-08 EP EP09159271A patent/EP2104108A1/en not_active Withdrawn
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2016
- 2016-12-20 JP JP2016246351A patent/JP2017085134A/ja active Pending
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| US5311039A (en) * | 1990-04-24 | 1994-05-10 | Seiko Epson Corporation | PROM and ROM memory cells |
| US20040175856A1 (en) * | 2001-07-25 | 2004-09-09 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of marking the same |
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