TWI462262B - 發光元件 - Google Patents
發光元件 Download PDFInfo
- Publication number
- TWI462262B TWI462262B TW098117112A TW98117112A TWI462262B TW I462262 B TWI462262 B TW I462262B TW 098117112 A TW098117112 A TW 098117112A TW 98117112 A TW98117112 A TW 98117112A TW I462262 B TWI462262 B TW I462262B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- light emitting
- emitting diodes
- component
- led
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 39
- 239000000919 ceramic Substances 0.000 claims description 15
- 239000012780 transparent material Substances 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 29
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000011777 magnesium Substances 0.000 description 11
- 239000011575 calcium Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 229910052788 barium Inorganic materials 0.000 description 8
- 229910052791 calcium Inorganic materials 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000012856 packing Methods 0.000 description 6
- 229910052712 strontium Inorganic materials 0.000 description 6
- 229910052794 bromium Inorganic materials 0.000 description 5
- 150000001768 cations Chemical class 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229920002675 Polyoxyl Polymers 0.000 description 3
- 229910004283 SiO 4 Inorganic materials 0.000 description 3
- 150000004645 aluminates Chemical class 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- -1 boron (B) Chemical class 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- CENHPXAQKISCGD-UHFFFAOYSA-N trioxathietane 4,4-dioxide Chemical compound O=S1(=O)OOO1 CENHPXAQKISCGD-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S4/00—Lighting devices or systems using a string or strip of light sources
- F21S4/20—Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports
- F21S4/28—Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports rigid, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
- F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
- H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
Description
本發明係關於一種基於複數個發光二極體(LED)之發光元件。特定言之,但非專屬地,本發明係關於一種交流(AC)驅動的發光元件,該發光元件可藉由一高電壓(110/220 V)供應器而操作。而且,本發明係關於基於複數個此種發光元件之AC光源。
此申請案主張2008年5月27日申請之His-yan Chou等人之名為「發光元件(LIGHT EMITTING DEVICE)」之美國非臨時專利申請案第12/127,749號之優先權,該申請案之全文以引用的方式併入本文中。
如已知的是,LED為固有直流(DC)元件,其等將僅在一單一方向上通過一電流,且在傳統上已藉由低電壓(例如3.5伏特,用於氮化鎵LED)DC源驅動。
產生白光之LED,即「白光LED」為一相對新近的革新且提供建立效率耗能照明系統之一全新產生之可能性。預期白光LED由於其等之可能長達100,000個小時之長的操作壽命及其等在低功耗方面之高效率而可替代白熾光源、螢光光源及緊湊型螢光光源。直到在電磁光譜之藍色/紫外部分中發射之LED被發展,才開始實際發展基於LED之白光源。舉例而言,如在美國專利US 5,998,925中所教示,白光LED包含一或多種磷光體材料,即光致發光材料,其吸收由該LED所發射之一部分輻射且重新發射具有一不同顏色(波長)之輻射。通常,LED晶片或晶粒產生藍光且該(等)磷光體吸收該藍光之一部分且重新發射黃光或綠光與紅光之組合、綠光與黃光之組合或黃光與紅光之組合。由該LED所產生之未被該磷光體吸收之該部分藍光係與由該磷光體所發射之光組合以提供以接近白色呈現於人類肉眼之光。
在照明應用中,需要能夠在不需要昂貴的電源供應器及驅動器電路之情況下藉由一高電壓(110/250 V)AC主電源供應器直接操作白光LED。美國專利US 2004/0080941揭示一種直接與一高電壓(110/220 V)AC電源供應器一起使用之單晶片積體LED,該單晶片積體LED包括串聯連接的個別LED之兩個陣列(串)。該等串係以該等LED成相對極性而並聯連接成一半波整流器組態,使得該等LED為自我整流。在每一串中提供足夠數目的LED(例如28個/串,用於110 V操作,及55個/串,用於220 V操作)以降低跨LED之總源電壓。在AC週期之正半週期期間,一串LED被順向偏壓且被賦能,同時其他串被逆向偏壓,在該AC週期之負半週期期間,其他LED串被順向偏壓且被賦能,同時該第一串被逆向偏壓且未被賦能。因此,該等串以AC供應器之頻率(50-60 Hz)被交替賦能,且該單一晶片LED呈現為被不斷賦能。該單一晶片LED係藉由連續磊晶沈積n型半導體材料層、光學作用層及p型半導體材料而形成以將個別LED界定於一單一晶圓上。鄰近的LED係藉由在個別LED之間沈積導電層而互連。通常,個別LED在該LED晶圓上以一20微米的間隔被隔開。雖然此種製造為緊湊型,但是其具有一個缺點:由於一次僅一LED串被賦能,所以該配置僅具有一50%的有效負載。
美國專利US 2007/0273299教示一種AC LED封裝,其中LED對或串聯連接的LED串係連接成一相對的平行組態,至少一電容器與每一平行組態及該AC電源供應器串聯連接。該等LED及電容器可被製造成一單一晶片、一單一封裝、一總成或一模組。該電容器基於由AC驅動器所提供之電壓及頻率而調節輸送至一或多個相對的平行LED之電流及順向電壓之量。由於僅具有相同極性之LED串在任一時間被賦能,所以該配置僅具有一50%的有效負載。
目前,舉例而言,如在美國專利US 2004/0080941中所教示,AC LED可由複數個互連的分立封裝LED或複數個互連的個別表面安裝元件(SMD)製成一單一晶片元件。在一單一晶片元件的情形下,該等LED係單石(monolithically)製造於一單一晶圓上,且LED係藉由LED之間之導電體的微影沈積而串聯連接。雖然此種配置可實現晶圓每單位面積之LED之一極高的封裝密度(100至400個/每平方釐米(cm2
)數量級,取決於LED晶片之大小),但是其具有一根本缺點,這是因為在製造期間,一單一LED之失效意味著必須丟棄整個元件,其導致一高生產成本。相反地,藉由互連分立的封裝元件,特別係包含一用於波長轉換之磷光體材料之白光LED所構造的AC LED導致5個/平方釐米數量級之極低的封裝密度。亦已知的是藉由安裝,通常藉由焊接個別SMD LED至一金屬核心印刷電路板(MCPCB)上來製造AC LED,且此種配置可實現10個LED/平方釐米數量級之封裝密度。然而,此種配置一般不適於每一LED之發光表面上額外需要一波長轉換磷光體層的白光LED。
本發明致力於提供一種AC發光元件,其至少部分克服該等已知配置之局限性。
本發明之實施例係關於一種包括複數個LED之發光元件,該等LED被安裝在一絕緣基板之凹槽內。
根據本發明,一發光元件包括:複數個發光二極體及一絕緣基板,該絕緣基板具有一凹槽陣列,每個凹槽係用於收容該等發光二極體中之一各自的發光二極體,該基板合併一導電體圖案,該圖案經組態以將該等發光二極體連接成一經選定之電組態及在各凹槽之底面上提供至少兩個電連接,且其中每一發光二極體係連接至該至少兩個電連接。通常,基板之每單位面積之發光二極體的封裝密度係在一30至100個/平方釐米之範圍內。在一配置中,發光二極體係藉由至少一接合線而電氣連接至該等電連接。或者,在該等發光二極體具有一或多個電連接於其基底上之情況下,該等發光二極體可藉由覆晶接合而電氣連接至該電連接。
該元件可進一步包括一在每一凹槽之基底上的導熱墊,每一凹槽係用於安裝一與其熱通連之各自的發光二極體。該基板宜進一步包括複數個熱通孔,該等通孔係用於將熱量從該導熱墊傳導至該基板外部。在一實施方案中,該等熱通孔可包括通過該絕緣基板至該基板之一後面之一系列孔。各孔之內壁宜(例如)以焊料電鍍或填充該孔而塗佈有一諸如金屬之導熱材料。
為使該等發光二極體免受週遭環境侵擾,每一凹槽可大體上填充有一大體透明之材料,(例如)諸如可UV固化或可熱固化之聚矽氧或環氧樹脂之聚合物,以密封每一發光二極體。至少一種磷光體材料宜併入該透明材料中,該磷光體材料為可操作以吸收由其相關之發光二極體所發射之光的至少部分,並重新發射具有一不同波長的光。
該等發光二極體可被串聯連接;被連接成發光二極體對,該等對又以相對極性並聯連接;被連接成半波整流器,其中發光二極體組被串聯連接且該等組以相對極性並聯連接;或被連接成一自我整流橋組態。
除該等發光二極體被組態成一自我整流配置之實施方案外,該發光元件可進一步包括一可使該元件能夠藉由一AC供應器而直接操作之整流配置。在一實施方案中,該整流配置之組件係收容在該基板之一或多個凹槽中。該整流配置宜包括四個連接成一橋整流器組態之二極體,且該導電體圖案經組態使得該複數個發光二極體在橋之整流節點之間串聯連接。使用單獨二極體用於整流之一個優點係該等發光二極體大體上在整個AC週期中操作並發射光。該等整流二極體可包括矽元件、鍺元件、碳化矽元件或氮化鎵元件。
該絕緣基板宜為一低溫共燒陶瓷(LTCC),但在其他實施方案中,其可包括矽或高溫聚合物。該導電體圖案宜包括一銀合金。
本發明元件之發光元件在一般照明中找到特定應用,且每一發光二極體宜包括一以氮化鎵為基礎之發光二極體晶片,該晶片發射在電磁光譜之藍色或UV區域中的光。
為最大化可收容在一給定基板面積上之發光二極體之數目,該凹槽陣列較佳係組態成一正方形陣列。在經組態用於110 V操作之實施方案中,該凹槽陣列包括具有49個開口之一正方形陣列,其中之45個開口係經組態以收容一各自的發光二極體,且剩下的4個開口可各自收容一整流二極體。
根據本發明之另一態樣,一AC光源包括一長型電路板,該電路板具有根據本發明之安裝在該電路板上且沿著該電路板之長度設置之複數個發光元件;及一長型的大體透明的圍封室,該電路板係經組態以安裝在該圍封室內。
根據本發明之又一態樣,一AC光源包括一環狀電路板,該電路板具有根據本發明之安裝在其上並且組態成一圓形陣列之複數個發光二極體;一本體,該電路板與其熱通連地安裝至其;及一連接器,其係用於連接該光源至一AC供應器。
為獲得對本發明之更深一層瞭解,本發明之實施例現將參考隨附圖式、僅藉由實例之方式而描述。
現在將參考隨附圖式之圖1至圖5而描述根據本發明之一第一實施例之一發射白光之AC發光元件10。該AC發光元件10係經組態以藉由一110 V(r.m.s.)AC(60 Hz)主電源供應器而直接操作,如在北美所見。
圖1為本發明之AC發光元件10之一電路圖,其包括四個串聯連接成一閉合迴路橋組態之整流二極體12、14、16、18(D1至D4)。該等整流二極體(D1至D4)可包括矽元件、鍺元件、碳化矽元件或氮化鎵元件。一110 V的AC主電源可連接至橋之相對節點20及22(AC1及AC2),且串聯連接之以氮化鎵為基之發射藍光或UV之45個LED晶片24(LED1至LED45)係連接在該二極體橋之整流正(+)節點26與負(-)節點28之間。對於110 V操作,每一LED晶片24下降一3.426伏特的峰值電壓[AC峰值電壓-跨整流二極體之壓降÷LED的數目:(110×1.414-2×0.68)/45=3.426]。
參考圖2,該AC發光元件之10之一較佳實施方案包括一正方形陶瓷基板(封裝)30,該基板具有49個圓形凹槽(盲孔或洞)之一陣列32。該等凹槽被配置成7列×7行之一規則的正方形陣列。如以下所述,該等圓形凹槽32經組態以收容該等LED晶片24中之一各自的LED晶片或該等整流二極體12至18(D1至D4)之一。通常,該陶瓷封裝為12平方毫米,且每一凹槽之直徑為1毫米,相鄰凹槽之中心之間具有一2毫米的間隔。此種配置實現基板之每平方釐米至多為34個LED晶片之一封裝密度。在個別表面安裝元件(SMD)LED被焊接於一金屬核心印刷電路板(MCPCB)上之已知配置中作比較,SMD LED之最高封裝密度為基板之每平方釐米為6個之數量級。應瞭解,該等凹槽之大小及間隔係獨立於該等LED晶片之尺寸而組態且通常會在0.3毫米至2毫米之一範圍內。為最佳化每單位面積之封裝密度,每一凹槽經制定尺寸以能夠恰好容納該LED晶片。凹槽之一正方形陣列為較佳,這是因為此最大化基板之每單位面積之LED晶片之數目,同時仍然能夠使該等LED晶片互連。
圖3係透過圖2之元件10之平面A-A之一示意橫截面圖。該陶瓷基板(封裝)30為一多層化結構且較佳包括一低溫共燒陶瓷(LTCC),該基板合併一導電軌圖案34,舉例而言,該圖案可包括一銀合金,其可經組態以將該等LED晶片24及整流二極體(D1至D4)互連成圖1所示之橋組態。該等導電軌34經組態使得其等之一部分延伸進入該凹槽,以在凹槽底面上提供一對電極墊36而電連接至一各自的LED晶片或整流二極體。應瞭解該等電極墊36可通過該凹槽32開口進入。在該封裝之一下表面上,提供一或多個焊墊40以將該元件10電氣連接至一AC電源並且能夠在該等經整流節點26、28之間對經整流供應器進行電存取。該基板30可進一步包含一或多個埋入式電極軌42,該等電極軌係藉由導電孔44而互連至該焊墊及/或導電軌34。在每一凹槽32之底面上設置一導熱安裝墊46,例如一銀合金墊,一LED晶片24或整流二極體(D1至D4)可安裝於該墊上。
圖4為該AC發光元件10之一透視部分截面圖,其中含有該等凹槽32之該陶瓷基板30之上部已被移除以使得該等導電軌34及電極墊36之組態為可見。如從圖中可見,該等導熱安裝墊46在形式上通常為「H」形以最大化其表面積。該LED或二極體係使用諸如銀負載之環氧樹脂48之一導熱黏合劑或藉由使用諸如一金/錫焊料之一低溫焊料焊接而安裝為與該安裝墊46熱通連。在該LED晶片/二極體之一上(發光)表面上之各自的電極50、52係藉由接合線54、56連接至該凹槽32底面上之一各自的電極墊36。該LED晶片24可包括發射紅光、綠光、藍光、黃褐光或白光之LED晶片。在例示性實施例中,每一LED晶片包括一發射藍光或紫外(UV)光之以氮化鎵為基之LED晶片。由於需要產生白光,所以每一凹槽填裝有一種磷光體(光致發光材料)材料58。為清晰起見,該磷光體材料58不包含在圖2及圖4中。通常為粉末形式之磷光體材料與諸如一聚合物材料(例如可熱固化或UV固化之聚矽氧或環氧樹脂材料)之透明黏結劑材料以及塗敷於每一LED晶片之發光表面之聚合物/磷光體混合物混合。本發明之AC LED特別適於與無機磷光體材料一起使用,例如與諸如為一般組合物A3
Si(OD)5
或A2
Si(OD)4
之以矽酸鹽為基之磷光體一起使用,其中Si為矽,O為氧,A包括鍶(Sr)、鋇(Ba)、鎂(Mg)或鈣(Ca),且D包括氯(Cl)、氟(F)、氮(N)或硫(S)。以矽酸鹽為基之磷光體之實例被揭示於吾人之共同待審查專利申請案美國專利US 2006/0145123、美國專利US 2006/028122、美國專利US 2006/261309及美國專利US 2007/029526中,該等申請案之每者之內容以引入的方式併入本文中。
如在美國專利US 2006/0145123中所教示,一鈅(Eu2+
)活化之以矽酸鹽為基之綠色磷光體具有通式(Sr,A1
)x
(Si,A2
)(O,A3
)2+x
:Eu2+
,其中:A1
為2+陽離子、1+及3+陽離子之組合中之至少一者,例如Mg、Ca、Ba、鋅(Zn)、鈉(Na)、鋰(Li)、鉍(Bi)、釔(Y)、鈰(Ce);A2
為3+、4+或5+陽離子,例如硼(B)、鋁(Al)、鎵(Ga)、碳(C)、鍺(Ge)、N或磷(P);且A3
為一1-、2-或3-陰離子,例如F、Cl、溴(Br)、N或S。該通式被記下以表示該A1
陽離子替代Sr;該A2
陽離子替代Si,且該A3
陰離子替代O。x之值為一整數或介於2.5與3.5之間之非整數。
美國專利US 2006/028122揭示一種以矽酸鹽為基之黃-綠磷光體,其具有一通式A2
SiO4
:Eu2+
D,其中A為包括Sr、Ca、Ba、Mg、Zn或鎘(Cd)之二價金屬中之至少一者;且D為一包括F、Cl、Br、碘(I)、P、S及N之摻雜。該摻雜D可以範圍為約0.01至20莫爾%之量存在於該磷光體中。該磷光體可包括(Sr1-x-y
Bax
My
)SiO4
:Eu2+
F,其中M包括Ca、Mg、Zn或Cd。
美國專利US 2006/261309教示一種二相之以矽酸鹽為基之磷光體,其具有一第一相,該相具有一與(M1)2
SiO4
之晶體結構大體相同之晶體結構;及一第二相,其具有一與(M2)3
SiO5
之晶體結構大體相同之晶體結構,其中M1及M2各自包括Sr、Ba、Mg、Ca或Zn。至少一相以二價金屬鈅(Eu2+
)予以活化,且該等相中之至少一者含有一包括F、Cl、Br、S或N之摻雜。據信該等摻雜原子中之至少一些係位於主矽酸鹽晶體之氧原子晶格位址上。
美國專利US 2007/029526揭示一種以矽酸鹽為基之橙色磷光體,其具有通式(Sr1-x
Mx
)y
Euz
SiO5
,其中M為包括Ba、Mg、Ca或Zn之二價金屬中之至少一者;0<x<0.5;2.6<y<3.3;且0.001<z<0.5。該磷光體係經組態以發射具有一大於約565奈米之峰值發射波長之可見光。
該磷光體亦可包括一種以鋁酸鹽為基之材料,例如在吾人之共同待審查專利申請案US 2006/0158090及US 2006/0027786中所教示,該等案之每者之內容以引用的方式併入本文中。
美國專利US 2006/0158090揭示一種具有通式M1-x
Eux
Aly
O[2+3y/2]
之以鋁酸鹽為基之綠色磷光體,其中M為一包括Ba、Sr、Ca、Mg、Mn、Zn、Cu、Cd、Sm及銩(Tm)之二價金屬中之至少一者,且其中0.1<x<0.9且0.5y12。
美國專利US 2006/0027786揭示一種具有通式(M1-x
Eux
)2-z
Mgz
Aly
O[2+3y/2]
之以鋁酸鹽為基之磷光體。其中M為一Ba或Sr之二價金屬中之至少一者。在一種組合物中,該磷光體係經組態以吸收波長在約280奈米至420奈米之範圍內之輻射,且發射具有一波長在約420奈米至560奈米之範圍內之可見光,且0.05<x<0.5或0.2<x<0.5;3y12且0.8z1.2。該磷光體可進一步以鹵素摻雜H(例如Cl、Br或I)摻雜且可具有一般組合物(M1-x
Eux
)2-z
Mgz
Aly
O[2+3y/2]
:H。
或者,該磷光體可包括一種以矽酸氮為基(nitridosilicate-based)之磷光體化合物,其在可見光譜之紅光區域內發射,且具有通式Ma
Mb
Mc
(N,D):Z,其中Ma
為一二價鹼土金屬元素,例如Mg、Ca、Sr或Ba;Mb
為一三價金屬,例如Al、Ga、Bi、Y、La或Sm;Mc
為一四價元素,例如Si、Ge、P或B,N為氮,D為一鹵素,例如F、Cl或Br;且Z為一諸如鈅Eu2+
之活化劑。
應瞭解該磷光體不受限於本文中所述之實例,且可包括以下之任何無機磷光體材料,包含例如氮化物及硫酸磷材料、氧氮化物及氧硫酸磷或石榴石材料(YAG)。
該陶瓷基板30可進一步包含複數個測試孔60,該等測試孔係沿該封裝30之相對邊緣配置。該等孔60使對應於互連LED晶片24串之節點之下面的電極墊38能夠被電氣地探測。
圖5為根據本發明之AC LED之一電路圖,其顯示該等LED晶片與其等之相關聯的凹槽32之實體位置之間的對應性。
為改良將熱量導出該元件10之傳導性,該陶瓷基板30可進一步合併熱通孔62,該等熱通孔提供一用於將熱量從熱安裝墊46傳導至該元件之一外部表面之傳導路徑,例如傳導至該元件之後面(基底)上之焊墊40上(圖6)。如所示,該等熱通孔62可包括一孔陣列,該等孔通過對應於熱安裝墊46之各凹槽32之底面而至該元件之基底。各孔之壁係藉由例如以一焊料64電鍍或填充該等孔而塗佈有諸如一金屬之一導熱材料64。
圖7為根據本發明之另一實施例之一AC發光元件10之一示意截面圖,其中該等LED晶片24具有一個電極52於其等之上發光表面上及一個傳導平面66於其等之下表面上。對於此等LED晶片24,在各凹槽之底面上之一個電極68係延伸進入該凹槽且提供一組合的熱安裝及電極墊。該LED之傳導平面66係藉由例如使用一低溫金/錫焊料70焊接而電氣連接至該安裝/電極墊68,且該電極52係藉由一接合線56而連接至該電極墊36。
圖8為根據本發明之又一實施例之一AC發光元件之一示意截面圖,其中該等LED晶片24具有一對電極72、74於其等之基底上。各LED晶片係藉由覆晶接合76各電極72、74至該等電極墊36中之一各自的電極墊而電氣連接至該等電極墊36。對於此種配置,該等凹槽32之直徑可為0.5毫米以接收一300平方微米之晶片,該等凹槽之中心以一0.5毫米的間隔而隔開,其實現100個LED晶片/平方釐米之一封裝密度。
圖9為根據本發明之一AC發光元件之一較佳實施方案之一示意截面圖。在此實施例中,各凹槽32填充有一透明材料78以覆蓋且密封各LED晶片24。合適的透明材料之實例為可UV固化或可熱固化之聚矽氧材料,例如GE之聚矽氧RTV615或環氧樹脂材料。該透明材料78組成該LED晶片24及接合線54、56之鈍化塗佈,且為該LED晶片及接合線提供環保。一般而言,較佳的是以該透明材料78完全填充各凹槽32。在圖9之實施例中,一含磷光體之材料之單獨層80係設置在各凹槽32上。該含磷光體之材料層較佳係製成一單獨片,其接著被切割成若干適當大小之件,其等可藉由例如一透明粘合劑而黏合至該基板30之表面上。粉末形式之該(等)磷光體材料係以一預選比例與一透明聚合物材料(例如,聚碳酸酯材料、環氧樹脂材料或熱固性或可UV固化之透明聚矽氧)混合。一適合的聚矽氧材料之一實例為GE之聚矽氧RTV615。磷光體混合物對聚矽氧裝載之重量比率通常係在35至65份/100之範圍內,且確切裝載將取決於該元件之目標關聯的色溫(CCT)。接著擠壓磷光體/聚合物混合物以形成一均勻的磷光體/聚合物片,在其體積中具有磷光體之一均勻分佈。通常,磷光體/聚合物片具有一100微米數量級之厚度。如在磷光體對聚合物之重量裝載情況下,該磷光體層80(磷光體/聚合物片)之厚度將取決於成品元件之目標CCT。圖9之組態與個別凹槽被填裝有一含磷光體之材料之元件比較,提供許多優點,此等即為:
.製造成本之降低,這是因為僅需製造一單一發光元件且由該元件所產生之光之CCT及/或顏色色調係藉由塗敷一適當的含磷光體之材料片而選定;
.可實現一更為一致之CCT及/或顏色色調;及
.由於該磷光體係位於該LED晶片之遠處,所以此減少該磷光體之熱降解(degradation)。
此外,應瞭解除了使該元件免受環境侵擾外,該透明材料78另外用作一熱障壁層,其進一步減小至該磷光體之熱量的傳導性。
圖10為一藉由一12 V AC供應器而直接操作之發光元件之一電路圖,該發光元件包括16個LED晶片(LED1至LED16)。如圖10所示,該等LED晶片係作為一自我整流配置而連接,該自我整流配置包括並聯連接在AC供應器之終端AC1與AC2之間之兩個全波橋整流器電路82、84。該第一橋整流器82在橋之各自臂中包括:在第一臂中之LED1;在第二臂中之串聯連接的LED2及LED3;在第三臂中之串聯連接的LED4及LED5;及在第四臂中之LED6。剩下的兩個LED晶片,即LED7及LED8係並聯連接在該第一橋之該等整流節點(+、-)之間。類似地,該第二橋整流器84在橋之各自臂中包括:LED9、串聯連接的LED10及LED11;串聯連接的LED12及LED13;及LED14。剩下的兩個LED晶片,即LED15及LED16係並聯連接在該第二橋之該等整流節點(+、-)之間。如在本發明之其他實施例中,該等LED晶片係收容在一陶瓷基板(封裝)30之一各自凹槽32中。習知地,該基板為正方形且具有一4列×4行之凹槽的正方形陣列。雖然一自我整流配置消除對額外整流二極體之需要,但是其減小該電路之有效負載,這是因為對於一整個AC週期,僅在該等橋之該等整流節點(+、-)之間的LED(亦即LED7、LED8及LED15、LED16)被賦能。相反地,LED1、LED4、LED5及LED9、LED12、LED13將在正半週期被賦能,且LED2、LED3、LED6及LED10、LED11、LED15將在負半週期被賦能且各者將在時間之50%內被各自賦能。
雖然本發明致力於提供一種可藉由一高電壓AC源操作之AC發光元件,但是應瞭解本發明亦找到用於藉由直流(DC)源之操作的應用。圖11為一用於藉由一110 V DC供應器之操作之發射白光之元件之一示意圖,該元件包括兩個串聯連接的元件10,其中各元件具有16個串聯連接的LED晶片(LED1至LED16)。如圖11所示,各元件10包括一正方形陶瓷基板30,該陶瓷基板30具有配置成一4列×4行之正方形陣列之16個凹槽32。各凹槽32收容該等LED晶片(LED1至LED16)中之一各自的LED晶片。如以上所述,該陶瓷基板進一步包含導電軌34,該等導電軌34係經組態以將該等LED晶片連接成一串聯配置。此種元件10之一益處係其模組性質,因為相同裝置可藉由各自串聯連接兩或四個此種裝置而藉由110 V DC或220 V DC操作。
本發明之發光元件在一般照明應用中找到特定應用,且圖12為基於本發明之發光元件10之一管形燈86之一示意透視圖。該燈86被設計作為對一習知之管形白熾燈或一螢光管之一替代,且經組態用於主操作110 V AC。在此例示性實施例中,該燈86在形式上為長型且包括一透明或半透明之大體為管形(圓筒形)的圍封室88。該管形圍封室86可由諸如一聚碳酸酯材料之一透明塑膠材料或由一玻璃材料製成。複數個發光元件10,例如圖11之該等元件係沿著一金屬核心印刷電路板(MCPCB)90之長度以一相等間隔而安裝。該MCPCB 90在形式上為長型,且經組態以安裝在該管形圍封室90內部。該MCPCB 90之後面係安裝成與一大體上沿著燈之長度運作的散熱器92熱通連。該散熱器92另外可與一各自的端帽94熱通連,以能夠使熱量消散到一更大的熱質,例如安裝有燈之照明器材。整流電路(未顯示)可收容在該等端帽94內,以使該燈能夠經由該等端帽上之連接接針96藉由一主供應器而直接操作。
圖13為根據本發明之一燈泡98之一透視圖,其係設計作為對一習知之白熾燈泡之一直接替代。在此實施例中,複數個發光元件10在一環狀MCPCB 100上被安裝成一圓形陣列。希望該燈泡98用於主操作110 V AC且包括一E26標準之基底(螺旋式連接器)102,以直接連接至一主電源供應器。應瞭解可使用其他連接器,例如在英國通常使用一卡口電纜連接器(bayonet connector)。該燈泡之主體104包括一大體上為錐形的散熱器104,該散熱器104具有複數個輻射熱量的鰭狀物106,該等鰭狀物沿著外表面軸向延伸並且軸向地處於一中心孔108內。該環狀MCPCB 100被安裝成與該散熱器104之圓形基底熱通連。整流電路(未顯示)可收容在該螺旋連接器102內,以使該等發光元件10能夠藉由一主電源供應器而直接操作。該燈泡另外可包括一透明或半透明的前蓋(未顯示)。
應瞭解在各種例示性實施例中,LED 24係收容在一各自凹槽32中,該凹槽32在該凹槽之底面上具有一對電極墊(導電體)36以連接至該LED之電極。本發明之發光元件之特定優點為:(a)有可能容易地製造具有一相對高之LED封裝密度(通常為30至100個LED/平方釐米)的裝置,及(b)由於各LED係收容在一各自凹槽中,可以一或多種磷光體材料填裝各凹槽而容易地提供一磷光體封裝,以實現所發射之光之一理想關聯的色溫及/或顏色色調。
應瞭解本發明不受限於所述之特定實施例,且在本發明之範圍內可作出變更。舉例而言,藉由適當選擇LED晶片之數目,本發明之AC發光元件可藉由其他高電壓主電源供應器(例如,如歐洲及亞洲所用之220 V AC(50 Hz))而直接操作。此外,各元件可經組態用於在較低電壓,例如在12 V AC下操作,且一串串聯連接的元件可藉由一較高電壓AC供應器而操作。
此外,雖然一陶瓷基板(封裝)係較佳用於具有高AC電壓供應器之操作,但是在替代實施例中,該封裝包括其他電絕緣材料,例如具有一良好導熱性之矽或一高溫聚合物材料。
10...AC發光元件
12...整流二極體
14...整流二極體
16...整流二極體
18...整流二極體
20...節點
22...節點
24...LED晶片
26...整流正節點
28...整流負節點
30...陶瓷基板
32...圓形凹槽
34...導電軌圖案
36...電極墊
40...焊墊
42...埋入式電極軌
44...導電孔
46...導熱安裝墊
48...環氧樹脂
50...電極
52...電極
54...接合線
56...接合線
58...磷光體材料
60...測試孔
62...熱通孔
64...焊料
66...傳導平面
68...電極
70...低溫金/錫焊料
72...電極
74...電極
76...覆晶
78...透明材料
80...含磷光體之材料之單獨層
82...全波橋整流器電路
84...全波橋整流器電路
86...管形燈
88...圍封室
90...金屬核心印刷電路板
92...散熱器
94...端帽
96...連接引腳
AC1...AC供應器之終端
AC2...AC供應器之終端
圖1為根據本發明之一實施例之一發光元件之一電路圖;圖2為根據本發明之一發光元件之一平面圖;圖3為圖2之發光元件透過一線「AA」之示意截面圖;圖4為圖2之發光元件之一透視部分截面圖;圖5為該發光元件之一電路圖,其顯示該等LED與其等之在該發光元件內的位置之間的關係;圖6為圖2之發光元件之一示意部分截面圖,其顯示熱通孔;圖7為根據本發明之另一實施例之一發光元件之一示意截面圖;圖8為根據本發明之又一實施例之一發光元件之一示意截面圖;圖9為根據本發明之又一替代實施例之一發光元件之一示意截面圖;圖10為根據本發明之另一實施例之一發光元件之一電路圖;圖11為根據本發明之又一實施例之一發光元件之一示意圖;圖12為合併本發明之發光元件之一管形燈之一示意透視圖;及圖13為合併本發明之發光元件之一白光源之一示意透視圖。
10...AC發光元件
24...LED晶片
30...陶瓷基板
32...圓形凹槽
34...導電軌圖案
36...電極墊
40...焊墊
42...埋入式電極軌
44...導電孔
46...導熱安裝墊
48...環氧樹脂
50...電極
52...電極
54...接合線
56...接合線
58...磷光體材料
60...測試孔
AC2...AC供應器之終端
Claims (16)
- 一種發光元件,其包括:複數個發光二極體;一整流裝置,包含構成一橋整流組態的複數個二極體;一絕緣基板,其具有複數個凹槽排成一凹槽陣列,該等凹槽各自用於裝納該等發光二極體中至少其一者以及該等二極體中至少其一者;一磷光體材料,設置於凹部陣列上且不與該等發光二極體接觸;及一導電軌圖案包含複數個電連結;其中,該等發光二極體中彼此相鄰的一部分通過該導電軌圖案的該等電連接而電氣連接。
- 如請求項1之元件,其中該絕緣基板之每單位面積之該等發光二極體的封裝密度係在30至100個/平方釐米的範圍內。
- 如請求項1之元件,其中該等發光二極體至少其一係藉由至少一接合線而電氣連接至該等電連接。
- 如請求項1之元件,其中該等發光二極體係藉由覆晶接合而電氣連接至該等電連接。
- 如請求項1之元件,進一步包括每一該等凹槽之基底上的一導熱墊,該等凹槽係用於安裝一與其熱通連之各自的該等發光二極體。
- 如請求項5之元件,其中該基板進一步包括若干熱通 孔,該等熱通孔係用於將熱量從該導熱墊傳導至該絕緣基板之外部。
- 如請求項1之元件,進一步包括一大體透明的材料,該材料大體上填充每一該等凹槽以密封每一該等發光二極體。
- 如請求項7之元件,其中該透明材料係選自由一可UV固化的聚合物、一可熱固化的聚合物、一環氧樹脂及一聚矽氧材料組成之清單。
- 如請求項1之元件,該磷光體材料係可操作以吸收由其相關聯之發光二極體所發射之該光之至少一部分且重新發射具有一不同波長之光。
- 如請求項1之元件,其中該橋整流組態包括複數個整流節點,透過該導電軌圖案使得該等發光二極體在該等整流節點之間串聯連接。
- 如請求項10之元件,其中該等二極體係選自由矽二極體、鍺二極體、碳化矽二極體及氮化鎵二極體所組成之群。
- 如請求項1之元件,其中該絕緣基板係選自由一低溫共燒陶瓷、矽及一高溫聚合物所組成之群。
- 如請求項1之元件,其中該等發光二極體包括一以氮化鎵為基之發光二極體晶片。
- 如請求項1之元件,其中該凹槽陣列係組態成一正方形陣列。
- 一種AC光源,其包括一具有如請求項1之複數個發光元件之長型電路板,該等發光元件係安裝在該電路板上並沿著該電路板之長度設置;及一長型之大體透明的圍封室,該電路板經組態安裝在該圍封室內。
- 一種AC光源,其包括一具有如請求項1之複數個發光元件之環狀電路板,該等發光元件係安裝在其上且被組態成一圓形陣列;一本體,該電路板熱通連地安裝至該本體;及一連接器,係連接一AC供應器。
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JP2011522414A (ja) | 2011-07-28 |
US8461613B2 (en) | 2013-06-11 |
CN102047372B (zh) | 2015-06-10 |
WO2009146257A1 (en) | 2009-12-03 |
EP2301054A4 (en) | 2014-01-08 |
EP2301054B1 (en) | 2022-08-24 |
KR20110017405A (ko) | 2011-02-21 |
CN102047372A (zh) | 2011-05-04 |
US20090294780A1 (en) | 2009-12-03 |
JP5688013B2 (ja) | 2015-03-25 |
TW201003890A (en) | 2010-01-16 |
EP2301054A1 (en) | 2011-03-30 |
KR101557029B1 (ko) | 2015-10-02 |
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