CN101614326A - 发光二极管 - Google Patents

发光二极管 Download PDF

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Publication number
CN101614326A
CN101614326A CN200810068068A CN200810068068A CN101614326A CN 101614326 A CN101614326 A CN 101614326A CN 200810068068 A CN200810068068 A CN 200810068068A CN 200810068068 A CN200810068068 A CN 200810068068A CN 101614326 A CN101614326 A CN 101614326A
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pedestal
light emitting
emitting diode
radiator
luminescence chip
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张家寿
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Priority to CN200810068068A priority Critical patent/CN101614326A/zh
Priority to US12/436,132 priority patent/US20090321768A1/en
Publication of CN101614326A publication Critical patent/CN101614326A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种发光二极管，包括基座、碗杯、发光芯片、胶体以及散热体，所述胶体填充至碗杯内，将发光芯片固定至基座上，该散热体设于基座的上表面，其包括若干个散热鳍片，相邻散热鳍片间填充有导热的多孔材料，该多孔材料可增加散热体与空气的接触面积，从而使发光芯片产生的热量可快速地向外散发，提高了所述发光二极管的散热效率。

Description

发光二极管
技术领域
本发明涉及一种发光二极管，特别是一种发光二极管的散热结构。
背景技术
发光二极管(Light Emitting Diode)是利用半导体材料中的电子与空穴结合时能量带位阶的改变，以发光的形式释放出能量。由于发光二极管具有体积小、寿命长、驱动电压低、反映速度快、耐震性佳等优点，已被广泛地应用在广告板、交通标志、日常照明等各种领域中。
一种典型的发光二极管包括一基座、位于该基座上的一发光芯片及包围该发光芯片外围的一封胶体。发光芯片通过导线与基座上的导电组件电连接。该基座的表面为平面的金属板，发光芯片所产生的热量首先通过基座散发。
然而，通常发光二极管发光时，其所消耗的能量仅大约10～20％被转换成光能，而其余的能量被转换成热量，这些热量必须及时疏散掉以保证发光二极管的正常工作。
发明内容
有鉴于此，有必要提供一种具有较好散热性能的发光二极管。
一种发光二极管，包括基座、碗杯、发光芯片、胶体以及散热体，所述胶体填充至碗杯内，将发光芯片固定至基座上，该散热体设于基座的上表面，其包括若干个散热鳍片，相邻散热鳍片间填充有导热的多孔材料。
上述发光二极管中，散热鳍片间填充的多孔材料可增加散热体与空气的接触面积，从而使发光芯片产生的热量可快速地向外散发，提高了所述发光二极管的散热效率。
附图说明
图1为一覆晶式发光二极管的剖面示意图。
具体实施方式
下面参照附图，以覆晶式发光二极管为例对本发明作进一步的描述。
图1为一覆晶式发光二极管10的剖面示意图。该发光二极管10包括一基座11、一发光芯片12、一胶体13、两个电极14、一绝缘体15以及一散热体16。
该基座11由导热材料如金属、陶瓷等制成。本实施例中，基座11的材料为铜、铝等金属。基座11的上部形成一碗杯112，碗杯112的侧面形成有金、银等反射层以增强光的反射率而提高发光二极管10的亮度。
该散热体16设于基座11的上表面，与基座11一体成型。该散热体16环设于碗杯112的周围，从而使该散热体16位于发光芯片12的周围。该散热体16包括若干个相互平行的散热鳍片161，各相邻的散热鳍片161间形成的空隙内填充有发泡金属等导热的多孔材料162，该多孔材料162的内部形成有大量孔隙，以增加散热体16与空气的接触面积，将发光芯片12产生的热量散发出去。
该发光芯片12被倒置于碗杯112内，该发光芯片12与涂覆于基座11上的两个电极层114之间通过两个焊锡凸块17电连接。
所述胶体13填充于碗杯112内，用以将发光芯片12固定至所述碗杯112内，防止发光芯片12受到外力冲击等损坏。形成该胶体13的材料可以为环氧树脂、聚酰亚胺、或压克力等。该胶体13内填充有荧光粉18，以与发光芯片12共同作用，得到所需波长的光线。
该胶体13的上表面为弧形凸面，且该胶体13的顶端低于碗杯112的顶面，以使发光芯片12发出的发散光线经胶体13适当汇聚并由碗杯112的侧面反射后由位于最内侧的两个散热鳍片161间射出，减少由于光线射向散热鳍片161而造成的光损失，提高光利用率，可以理解地，可将位于散热体16最内侧的两个表面即最内侧的两个散热鳍片161的内表面制造成光滑的表面或在上述两个表面上形成反射层，以进一步提高光利用率。
所述电极14设于基座11的下表面，这两个电极14相互分离且均与基座11的底面相接触。上述电极14与电极层114之间通过贯穿基座11的电通道116电连接。该电通道116的材质可为金属、金属与树脂的混合物、石墨或石墨与树脂的混合物，且其导电率高于基座11材料的导电率。可以理解地，由于本实施例中的基座11为导电的金属材质，该发光二极管10内可以无需设置电通道116和/或电极层114，而直接利用凸块17及金属基座11，或凸块17、电极层114及金属基座11，或凸块17、电通道116及金属基座11，实现电极14与发光芯片12的电连接。
该绝缘体15设于基座11的中部，并沿轴向贯穿基座11。该绝缘体15由导热的电绝缘材料如氧化铝、陶瓷等制成，且其导热率高于基座11的导热率，使发光芯片12发出的热量可沿绝缘体15快速地向下传递。另外，绝缘体15的内部形成有大量的孔隙，以提高该绝缘体15的导热率。
该绝缘体15沿径向贯穿基座11的下部，将基座11分隔为电绝缘的左、右两个部分，且自下而上分别位于电极14之间、电通道116之间及凸块17之间，使上述两个电极14分别通过对应的电通道116及凸块17与发热芯片的P极和N极相连，避免在发光二极管10的工作过程中造成短路。
工作时，发光芯片12产生的热量传递至基座11上，并沿着所述绝缘体15和基座11向下传递，同时沿基座11向上传递，经基座11、绝缘体15和散热体16散发至周围空气中。由于绝缘体15的导热率高于基座11的导热率，可加快热量向下传递的速度，提升本实施例中发光二极管10的散热效果。另外，散热体16内形成的大量孔隙可大大增加散热体16与空气的接触面积，使发光芯片12工作时产生的热量可迅速散发，进一步提高了上述发光二极管10的散热效率。
本实施例中所述的基座11为金属基座11，为将基座11的左右两个部分分隔为电绝缘的两个部分，绝缘体15需沿径向贯穿所述基座11。可以理解地，当所述基座11由陶瓷材料制成时，绝缘体15则无须沿径向贯穿上述基座11或者无需设置绝缘体15。并且，当基座11由陶瓷材料制成时，则须在基座11内设置电通道116。

Claims (10)

1.一种发光二极管，包括基座、碗杯、发光芯片、胶体以及散热体，所述胶体填充至碗杯内，将发光芯片固定至基座上，其特征在于：该散热体设于基座的上表面，其包括若干个散热鳍片，相邻散热鳍片间填充有导热的多孔材料。
2.如权利要求1所述的发光二极管，其特征在于：该胶体的上表面为弧形凸面。
3.如权利要求1所述的发光二极管，其特征在于：该胶体的顶端低于碗杯的顶面。
4.如权利要求1所述的发光二极管，其特征在于：该散热体设于该发光芯片的周围。
5.如权利要求1所述的发光二极管，其特征在于：该散热体的位于最内侧的两个表面为光滑表面。
6.如权利要求1所述的发光二极管，其特征在于：该散热体的位于最内侧的两个表面上形成有反射层。
7.如权利要求1所述的发光二极管，其特征在于：该碗杯的侧面形成有反射层。
8.如权利要求1所述的发光二极管，其特征在于：该基座的下表面设有两个电极，该基座内设有两个电通道，该碗杯内设有两个电极层，该发光芯片通过所述电极层及电通道与所述电极电连接。
9.如权利要求8所述的发光二极管，其特征在于：该发光芯片倒置于所述基座上，通过两个焊锡凸块与所述电极层相连。
10.如权利要求1所述的发光二极管，其特征在于：该基座内设有一绝缘体，该绝缘体将基座分隔为电绝缘的两个部分，该绝缘体由导热的电绝缘材料制成，且其导热率高于基座的导热率。
CN200810068068A 2008-06-27 2008-06-27 发光二极管 Pending CN101614326A (zh)

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CN103840060A (zh) * 2012-11-26 2014-06-04 梁建忠 一种led支架及led
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US8952395B2 (en) 2011-07-26 2015-02-10 Micron Technology, Inc. Wafer-level solid state transducer packaging transducers including separators and associated systems and methods
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CN102088055B (zh) * 2010-12-03 2013-03-27 东莞市胤腾光电科技有限公司 Led支架
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