TWI458847B - Cu-Ga alloy sintered body sputtering target, a method for manufacturing the target, a light absorbing layer made of a Cu-Ga alloy sintered body target, and a CIGS solar cell using the light absorbing layer - Google Patents
Cu-Ga alloy sintered body sputtering target, a method for manufacturing the target, a light absorbing layer made of a Cu-Ga alloy sintered body target, and a CIGS solar cell using the light absorbing layer Download PDFInfo
- Publication number
- TWI458847B TWI458847B TW099124242A TW99124242A TWI458847B TW I458847 B TWI458847 B TW I458847B TW 099124242 A TW099124242 A TW 099124242A TW 99124242 A TW99124242 A TW 99124242A TW I458847 B TWI458847 B TW I458847B
- Authority
- TW
- Taiwan
- Prior art keywords
- sintered body
- target
- alloy
- sputtering target
- alloy sintered
- Prior art date
Links
- 229910000807 Ga alloy Inorganic materials 0.000 title claims description 56
- 238000000034 method Methods 0.000 title claims description 48
- 238000005477 sputtering target Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000843 powder Substances 0.000 claims description 43
- 239000002994 raw material Substances 0.000 claims description 41
- 238000004544 sputter deposition Methods 0.000 claims description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 35
- 229910052760 oxygen Inorganic materials 0.000 claims description 35
- 239000001301 oxygen Substances 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 33
- 238000007731 hot pressing Methods 0.000 claims description 27
- 238000001816 cooling Methods 0.000 claims description 19
- 238000002844 melting Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 238000009692 water atomization Methods 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 7
- 238000009689 gas atomisation Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 50
- 239000002245 particle Substances 0.000 description 50
- 230000002159 abnormal effect Effects 0.000 description 32
- 239000010408 film Substances 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 238000005204 segregation Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000011148 porous material Substances 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010298 pulverizing process Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005242 forging Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910017566 Cu-Mn Inorganic materials 0.000 description 1
- 229910017871 Cu—Mn Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000011085 pressure filtration Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 125000003748 selenium group Chemical class *[Se]* 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
- C22C30/02—Alloys containing less than 50% by weight of each constituent containing copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009171813 | 2009-07-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201109458A TW201109458A (en) | 2011-03-16 |
| TWI458847B true TWI458847B (zh) | 2014-11-01 |
Family
ID=43499005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099124242A TWI458847B (zh) | 2009-07-23 | 2010-07-23 | Cu-Ga alloy sintered body sputtering target, a method for manufacturing the target, a light absorbing layer made of a Cu-Ga alloy sintered body target, and a CIGS solar cell using the light absorbing layer |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5202643B2 (ja) |
| TW (1) | TWI458847B (ja) |
| WO (1) | WO2011010529A1 (ja) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5818139B2 (ja) * | 2010-06-28 | 2015-11-18 | 日立金属株式会社 | Ｃｕ−Ｇａ合金ターゲット材およびその製造方法 |
| JP5740891B2 (ja) * | 2010-09-29 | 2015-07-01 | 住友金属鉱山株式会社 | Ｃｕ−Ｇａ合金スパッタリングターゲット及びＣｕ−Ｇａ合金スパッタリングターゲットの製造方法 |
| JP5819323B2 (ja) * | 2011-01-17 | 2015-11-24 | Jx日鉱日石金属株式会社 | Ｃｕ−Ｇａターゲット及びその製造方法 |
| JP5617723B2 (ja) * | 2011-03-25 | 2014-11-05 | 住友金属鉱山株式会社 | Ｃｕ−Ｇａ合金スパッタリングターゲット |
| JP5661540B2 (ja) * | 2011-04-01 | 2015-01-28 | 山陽特殊製鋼株式会社 | 酸素含有量が低いＣｕ−Ｇａ系合金粉末、Ｃｕ−Ｇａ系合金ターゲット材、およびターゲット材の製造方法 |
| JP5725610B2 (ja) | 2011-04-29 | 2015-05-27 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
| JP5999357B2 (ja) | 2012-02-24 | 2016-09-28 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
| CN103421976B (zh) * | 2012-05-22 | 2017-11-21 | 山阳特殊制钢株式会社 | 氧含量低的Cu‑Ga系合金粉末、Cu‑Ga系合金靶材、以及靶材的制造方法 |
| JP2012246574A (ja) * | 2012-09-18 | 2012-12-13 | Mitsubishi Materials Corp | スパッタリングターゲット及びその製造方法 |
| JP6311912B2 (ja) | 2012-10-17 | 2018-04-18 | 三菱マテリアル株式会社 | Ｃｕ−Ｇａ二元系スパッタリングターゲット及びその製造方法 |
| JP5594618B1 (ja) * | 2013-02-25 | 2014-09-24 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
| JP6176535B2 (ja) * | 2013-02-25 | 2017-08-09 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
| JP6365922B2 (ja) | 2013-04-15 | 2018-08-01 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
| JP6120076B2 (ja) | 2013-08-01 | 2017-04-26 | 三菱マテリアル株式会社 | Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法 |
| CN105473758B (zh) | 2013-10-07 | 2018-02-27 | 三菱综合材料株式会社 | 溅射靶及其制造方法 |
| JP5743119B1 (ja) * | 2014-01-28 | 2015-07-01 | 三菱マテリアル株式会社 | Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法 |
| JP5795420B2 (ja) * | 2014-10-29 | 2015-10-14 | 山陽特殊製鋼株式会社 | 酸素含有量が低いＣｕ−Ｇａ系合金スパッタリングターゲット材 |
| JP5840748B2 (ja) * | 2014-10-31 | 2016-01-06 | 山陽特殊製鋼株式会社 | 酸素含有量が低いＣｕ−Ｇａ系合金粉末およびスパッタリングターゲット材の製造方法 |
| JP6583019B2 (ja) | 2015-03-30 | 2019-10-02 | 三菱マテリアル株式会社 | Ｃｕ−Ｇａ合金スパッタリングターゲット、及び、Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法 |
| TWI551704B (zh) * | 2015-05-21 | 2016-10-01 | China Steel Corp | Copper gallium alloy composite sodium element target manufacturing method |
| JP6855292B2 (ja) * | 2016-03-16 | 2021-04-07 | Ｄｏｗａエレクトロニクス株式会社 | Ａｇ−Ｃｕ合金粉末およびその製造方法 |
| WO2019194275A1 (ja) * | 2018-04-04 | 2019-10-10 | 三菱マテリアル株式会社 | Ｃｕ－Ｇａ合金スパッタリングターゲット |
| JP2019183277A (ja) * | 2018-04-04 | 2019-10-24 | 三菱マテリアル株式会社 | Ｃｕ−Ｇａ合金スパッタリングターゲット |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11260724A (ja) * | 1998-03-16 | 1999-09-24 | Matsushita Electric Ind Co Ltd | 化合物半導体薄膜の製造方法および製造装置 |
| JP2000073163A (ja) * | 1998-08-28 | 2000-03-07 | Vacuum Metallurgical Co Ltd | Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法 |
| JP2000239836A (ja) * | 1999-02-23 | 2000-09-05 | Japan Energy Corp | 高純度銅または銅合金スパッタリングターゲットおよびその製造方法 |
| WO2003064722A1 (fr) * | 2002-01-30 | 2003-08-07 | Nikko Materials Company, Limited | Cible de pulverisation d'alliage de cuivre et procede de fabrication de cette cible |
| JP2004162109A (ja) * | 2002-11-12 | 2004-06-10 | Nikko Materials Co Ltd | スパッタリングターゲット及び同製造用粉末 |
| JP2008138232A (ja) * | 2006-11-30 | 2008-06-19 | Mitsubishi Materials Corp | 高Ｇａ含有Ｃｕ−Ｇａ二元系合金スパッタリングターゲットおよびその製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6119749A (ja) * | 1984-07-06 | 1986-01-28 | Hitachi Ltd | 分光反射率可変合金及び記録材料 |
| JP5182494B2 (ja) * | 2008-05-30 | 2013-04-17 | 三菱マテリアル株式会社 | カルコパイライト型半導体膜成膜用スパッタリングターゲットの製造方法 |
-
2010
- 2010-06-29 JP JP2010535149A patent/JP5202643B2/ja active Active
- 2010-06-29 WO PCT/JP2010/061048 patent/WO2011010529A1/ja active Application Filing
- 2010-07-23 TW TW099124242A patent/TWI458847B/zh active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11260724A (ja) * | 1998-03-16 | 1999-09-24 | Matsushita Electric Ind Co Ltd | 化合物半導体薄膜の製造方法および製造装置 |
| JP2000073163A (ja) * | 1998-08-28 | 2000-03-07 | Vacuum Metallurgical Co Ltd | Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法 |
| JP2000239836A (ja) * | 1999-02-23 | 2000-09-05 | Japan Energy Corp | 高純度銅または銅合金スパッタリングターゲットおよびその製造方法 |
| WO2003064722A1 (fr) * | 2002-01-30 | 2003-08-07 | Nikko Materials Company, Limited | Cible de pulverisation d'alliage de cuivre et procede de fabrication de cette cible |
| JP2004162109A (ja) * | 2002-11-12 | 2004-06-10 | Nikko Materials Co Ltd | スパッタリングターゲット及び同製造用粉末 |
| JP2008138232A (ja) * | 2006-11-30 | 2008-06-19 | Mitsubishi Materials Corp | 高Ｇａ含有Ｃｕ−Ｇａ二元系合金スパッタリングターゲットおよびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5202643B2 (ja) | 2013-06-05 |
| TW201109458A (en) | 2011-03-16 |
| JPWO2011010529A1 (ja) | 2012-12-27 |
| WO2011010529A1 (ja) | 2011-01-27 |
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