TWI455825B - 薄膜積層體 - Google Patents
薄膜積層體 Download PDFInfo
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- TWI455825B TWI455825B TW102103335A TW102103335A TWI455825B TW I455825 B TWI455825 B TW I455825B TW 102103335 A TW102103335 A TW 102103335A TW 102103335 A TW102103335 A TW 102103335A TW I455825 B TWI455825 B TW I455825B
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- 239000010409 thin film Substances 0.000 title claims 15
- 239000010408 film Substances 0.000 claims 32
- 229910052751 metal Inorganic materials 0.000 claims 12
- 239000002184 metal Substances 0.000 claims 12
- 229910044991 metal oxide Inorganic materials 0.000 claims 9
- 150000004706 metal oxides Chemical class 0.000 claims 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 6
- 125000004432 carbon atom Chemical group C* 0.000 claims 6
- 239000010936 titanium Substances 0.000 claims 6
- 229910052719 titanium Inorganic materials 0.000 claims 6
- 229910052726 zirconium Inorganic materials 0.000 claims 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 5
- 229910052787 antimony Inorganic materials 0.000 claims 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 5
- 229910052738 indium Inorganic materials 0.000 claims 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 5
- 229910052718 tin Inorganic materials 0.000 claims 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 5
- 229910052721 tungsten Inorganic materials 0.000 claims 5
- 239000010937 tungsten Substances 0.000 claims 5
- 229910052725 zinc Inorganic materials 0.000 claims 5
- 239000011701 zinc Substances 0.000 claims 5
- 229910052684 Cerium Inorganic materials 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 4
- 229910052746 lanthanum Inorganic materials 0.000 claims 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 4
- 239000011133 lead Substances 0.000 claims 4
- 238000003980 solgel method Methods 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 3
- 239000002131 composite material Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 150000002736 metal compounds Chemical class 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- -1 organic acid salt Chemical class 0.000 claims 2
- 125000000962 organic group Chemical group 0.000 claims 2
- 229920000620 organic polymer Polymers 0.000 claims 2
- 230000035699 permeability Effects 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 150000001785 cerium compounds Chemical class 0.000 claims 1
- 239000013522 chelant Substances 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 230000005494 condensation Effects 0.000 claims 1
- 238000009833 condensation Methods 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 1
- 230000007062 hydrolysis Effects 0.000 claims 1
- 238000006460 hydrolysis reaction Methods 0.000 claims 1
- 238000007733 ion plating Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000003960 organic solvent Substances 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 150000003304 ruthenium compounds Chemical class 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 238000001771 vacuum deposition Methods 0.000 claims 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/16—Chemical modification with polymerisable compounds
- C08J7/18—Chemical modification with polymerisable compounds using wave energy or particle radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
- B32B7/025—Electric or magnetic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
- B32B7/027—Thermal properties
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/42—Introducing metal atoms or metal-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/42—Block-or graft-polymers containing polysiloxane sequences
- C08G77/458—Block-or graft-polymers containing polysiloxane sequences containing polyurethane sequences
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/046—Forming abrasion-resistant coatings; Forming surface-hardening coatings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
- C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/04—Polysiloxanes
- C08J2483/05—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/04—Polysiloxanes
- C08J2483/06—Polysiloxanes containing silicon bound to oxygen-containing groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0843—Cobalt
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
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- C08K2003/085—Copper
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
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- C08K2003/0856—Iron
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
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- C08K2003/0862—Nickel
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
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- C08K2003/0875—Antimony
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
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- C08K2003/0881—Titanium
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0887—Tungsten
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
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- C08K2003/0893—Zinc
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Claims (19)
- 一種薄膜積層體，其係於樹脂基體上依序形成有第1層、第2層者，其特徵在於：第1層為含有a)由式(I)Rn SiX4-n (I)(式中，R表示碳原子直接鍵結於Si上之有機基，X表示羥基或水解性基；n表示1或2，n為2時，各R可相同亦可不同，(4-n)為2以上時，各X可相同亦可不同)表示之有機矽化合物之縮合物、及b)有機高分子化合物的膜厚500 nm以上之有機無機複合薄膜，第2層為a)藉由溶膠凝膠法而形成之膜厚200 nm以下之金屬氧化物薄膜，且由下述式膜厚之偏差[%]=100×(膜厚之標準偏差)/(膜厚之平均值)表示之膜厚之偏差未達10%，或為b)膜厚500 nm以下之阻氣膜，且第1層於與第2層之界面側包含由式(I)表示之有機矽化合物之縮合物濃縮而成之層，該濃縮層之碳原子之濃度與距第1層與第2層之界面300 nm之深度的第1層之碳原子之濃度相比少20%以上。
- 如請求項1之薄膜積層體，其中第1層之濃縮層之碳原子之濃度與距第1層與第2層之界面300 nm之深度的第1層之碳原子之濃度相比少40%以上。
- 如請求項1之薄膜積層體，其平均表面粗糙度Ra為1 nm以下。
- 如請求項1之薄膜積層體，其中第1層進而含有包含選自由鈦、鋯、鋁、矽、鍺、銦、錫、鉭、鋅、鎢及鉛所組成之群中之金屬元素之金屬化合物。
- 如請求項1之薄膜積層體，其中第2層之金屬氧化物薄膜為包含選自由鈦、鋯、鋁、矽、鍺、銦、錫、鉭、鋅、鎢及鉛所組成之群中之金屬元素之金屬氧化物薄膜。
- 如請求項5之薄膜積層體，其中金屬元素為選自由鈦、鋯、銦、錫、鉭、鋅、鎢及鉛所組成之群中之金屬元素。
- 如請求項6之薄膜積層體，其中金屬元素為選自由鈦及鋯所組成之群中之金屬元素。
- 如請求項7之薄膜積層體，其中第2層之金屬氧化物薄膜為藉由照射電磁波而可使折射率變化至1.6~2.1之層。
- 如請求項7或8之薄膜積層體，其中第2層之金屬氧化物薄膜為非晶質之鈦氧化物薄膜。
- 如請求項1之薄膜積層體，其中藉由溶膠凝膠法而形成之第2層之金屬氧化物薄膜係由如下之薄膜形成用組合物形成而成之薄膜，該薄膜形成用組合物係於含有選自由合計具有2個以上之水解性基及/或羥基之金屬化合物、合計具有2個以上之水解性基及/或羥基之金屬螯合化合物、金屬有機酸鹽、以及該等之部分水解產物所組成之群中之至少一種的有機溶劑溶液中添加特定量之水而獲得。
- 如請求項1之薄膜積層體，其中於第2層之金屬氧化物薄膜上形成折射率小於第2層之膜厚為200 nm以下之第3層。
- 如請求項11之薄膜積層體，其中第3層為藉由溶膠凝膠法而形成之含有SiO2 之薄膜。
- 如請求項1之薄膜積層體，其中薄膜積層體為透明導電膜形成用基板。
- 如請求項1之薄膜積層體，其中第2層之阻氣膜為包含含有選自由鈦、鋯、鋁、矽、鍺、銦、錫、鉭、鋅、鎢及鉛所組成之群中之金屬元素之金屬氧化物、金屬氮化物、金屬碳化物或該等之複合物之薄膜。
- 如請求項1之薄膜積層體，其水蒸氣穿透度為1×10-1 g/m2 ．day以下。
- 如請求項1之薄膜積層體，其水蒸氣穿透度為1×10-2 g/m2 ．day以下。
- 一種薄膜積層體之製造方法，其係如請求項1之薄膜積層體之製造方法，其特徵在於包括下述步驟1~步驟3：(步驟1)於樹脂基體上形成含有a)由式(I)Rn SiX4-n (I)(式中，R表示碳原子直接鍵結於Si上之有機基，X表示羥基或水解性基；n表示1或2，n為2時，各R可相同亦可不同，(4-n)為2以上時，各X可相同亦可不同)表示之有機矽化合物之縮合物、及b)有機高分子化合物之有機無機複合薄膜作為第1層；(步驟2)對第1層之表面進行電漿處理或UV臭氧處理；(步驟3)於第1層之表面利用下述a)或b)之方法形成第2層：a)藉由溶膠凝膠法形成金屬氧化物薄膜之步驟，b)藉由濺鍍法、真空蒸鍍法、離子鍍著法或電漿CVD法形成阻氣膜之步驟。
- 如請求項17之薄膜積層體之製造方法，其中於(步驟1)中，作為第1層之成分進而含有包含選自由鈦、鋯、鋁、矽、鍺、銦、錫、鉭、鋅、鎢及鉛所組成之群中之金屬元素之金屬化合物。
- 如請求項17之薄膜積層體之製造方法，其中於利用步驟3之a)步驟形成第2層時或形成後照射電磁波。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012025024 | 2012-02-08 | ||
| JP2012086540 | 2012-04-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201334969A TW201334969A (zh) | 2013-09-01 |
| TWI455825B true TWI455825B (zh) | 2014-10-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101124829A TWI447136B (zh) | 2012-02-08 | 2012-07-10 | Organic and inorganic composite film |
| TW102103335A TWI455825B (zh) | 2012-02-08 | 2013-01-29 | 薄膜積層體 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
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| TW101124829A TWI447136B (zh) | 2012-02-08 | 2012-07-10 | Organic and inorganic composite film |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5911182B2 (zh) |
| KR (2) | KR101690847B1 (zh) |
| CN (2) | CN104114622B (zh) |
| TW (2) | TWI447136B (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014010219A1 (ja) * | 2012-07-10 | 2014-01-16 | 日本曹達株式会社 | 自己組織化膜を有する薄膜積層体 |
| TWI530574B (zh) * | 2013-08-27 | 2016-04-21 | 財團法人工業技術研究院 | 有機無機複合薄膜與其形成方法 |
| TWI682010B (zh) * | 2015-03-31 | 2020-01-11 | 日商日揮觸媒化成股份有限公司 | 被膜形成用之塗佈液及其製造方法、以及附被膜基材之製造方法 |
| JP6467502B2 (ja) * | 2015-05-12 | 2019-02-13 | 日本曹達株式会社 | 光触媒含有塗布液及び光触媒担持構造体 |
| CN108807603B (zh) * | 2017-06-26 | 2019-10-11 | 苏州科技大学 | 用于太赫兹波探测的器件 |
| TWI629180B (zh) * | 2017-08-23 | 2018-07-11 | 國立臺北科技大學 | 水氣阻障層合體 |
| CN111601711B (zh) | 2018-01-19 | 2023-03-31 | 凸版印刷株式会社 | 阻气层叠体以及具备该阻气层叠体的包装材料 |
| JP7172627B2 (ja) * | 2019-01-17 | 2022-11-16 | 凸版印刷株式会社 | ガスバリア積層体及びそれを備える包装体 |
| CN108594501B (zh) * | 2018-02-26 | 2021-04-27 | 京东方科技集团股份有限公司 | 一种液晶显示面板及其制作方法 |
| KR102391800B1 (ko) | 2018-06-15 | 2022-04-29 | 주식회사 엘지화학 | 비정질 박막의 제조방법 |
| KR102053996B1 (ko) * | 2018-09-27 | 2019-12-09 | 한양대학교 산학협력단 | 배리어, 배리어 제조방법, 배리어를 포함하는 디스플레이, 및 배리어를 포함하는 디스플레이의 제조방법 |
| CN111487702B (zh) * | 2020-05-12 | 2021-02-12 | 深圳大学 | 轻金属膜粘附重金属胶体的光栅制作工艺 |
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- 2012-07-10 WO PCT/JP2012/004447 patent/WO2013118201A1/ja active Application Filing
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Also Published As
| Publication number | Publication date |
|---|---|
| JP5911182B2 (ja) | 2016-04-27 |
| KR20140114405A (ko) | 2014-09-26 |
| CN104114622B (zh) | 2016-02-10 |
| CN104093560A (zh) | 2014-10-08 |
| WO2013118442A1 (ja) | 2013-08-15 |
| CN104093560B (zh) | 2016-10-26 |
| KR101690847B1 (ko) | 2016-12-28 |
| TW201334969A (zh) | 2013-09-01 |
| TWI447136B (zh) | 2014-08-01 |
| JPWO2013118442A1 (ja) | 2015-05-11 |
| KR20140116903A (ko) | 2014-10-06 |
| CN104114622A (zh) | 2014-10-22 |
| WO2013118201A1 (ja) | 2013-08-15 |
| KR101563451B1 (ko) | 2015-10-26 |
| TW201333055A (zh) | 2013-08-16 |
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