TWI455182B - 第四族基板表面上的氮化物半導體裝置夾層架構 - Google Patents
第四族基板表面上的氮化物半導體裝置夾層架構 Download PDFInfo
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- TWI455182B TWI455182B TW097115627A TW97115627A TWI455182B TW I455182 B TWI455182 B TW I455182B TW 097115627 A TW097115627 A TW 097115627A TW 97115627 A TW97115627 A TW 97115627A TW I455182 B TWI455182 B TW I455182B
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- Prior art keywords
- substrate
- group
- layer
- symmetry
- nitride semiconductor
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 126
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 98
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 238000007704 wet chemistry method Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 238000010899 nucleation Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 165
- 229910002601 GaN Inorganic materials 0.000 description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 229910052738 indium Inorganic materials 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910021478 group 5 element Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 238000003631 wet chemical etching Methods 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical class [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229940069428 antacid Drugs 0.000 description 2
- 239000003159 antacid agent Substances 0.000 description 2
- 230000001458 anti-acid effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000011081 inoculation Methods 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- -1 HF and HNO 3 ) Chemical class 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US92644407P | 2007-04-27 | 2007-04-27 | |
| DE102007020979A DE102007020979A1 (de) | 2007-04-27 | 2007-04-27 | Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200913018A TW200913018A (en) | 2009-03-16 |
| TWI455182B true TWI455182B (zh) | 2014-10-01 |
Family
ID=39777592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097115627A TWI455182B (zh) | 2007-04-27 | 2008-04-28 | 第四族基板表面上的氮化物半導體裝置夾層架構 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US20100133658A1 (enExample) |
| EP (1) | EP2150970B1 (enExample) |
| JP (2) | JP2010525595A (enExample) |
| KR (1) | KR20100017413A (enExample) |
| CN (1) | CN101689483B (enExample) |
| AT (1) | ATE533176T1 (enExample) |
| DE (1) | DE102007020979A1 (enExample) |
| ES (1) | ES2375591T3 (enExample) |
| IN (1) | IN2009DN07391A (enExample) |
| MY (1) | MY149217A (enExample) |
| TW (1) | TWI455182B (enExample) |
| WO (1) | WO2008132204A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4829190B2 (ja) * | 2007-08-22 | 2011-12-07 | 株式会社東芝 | 発光素子 |
| DE102009047881B4 (de) * | 2009-09-30 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur |
| DE102009051521B4 (de) | 2009-10-31 | 2012-04-26 | X-Fab Semiconductor Foundries Ag | Herstellung von Siliziumhalbleiterscheiben mit III-V-Schichtstrukturen für High Electron Mobility Transistoren (HEMT) und eine entsprechende Halbleiterschichtanordnung |
| DE102009051520B4 (de) | 2009-10-31 | 2016-11-03 | X-Fab Semiconductor Foundries Ag | Verfahren zur Herstellung von Siliziumhalbleiterscheiben mit Schichtstrukturen zur Integration von III-V Halbleiterbauelementen |
| DE102010027411A1 (de) * | 2010-07-15 | 2012-01-19 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement, Substrat und Verfahren zur Herstellung einer Halbleiterschichtenfolge |
| DE102010046215B4 (de) * | 2010-09-21 | 2019-01-03 | Infineon Technologies Austria Ag | Halbleiterkörper mit verspanntem Bereich, Elektronisches Bauelement und ein Verfahren zum Erzeugen des Halbleiterkörpers. |
| KR20120032329A (ko) | 2010-09-28 | 2012-04-05 | 삼성전자주식회사 | 반도체 소자 |
| DE102010048617A1 (de) * | 2010-10-15 | 2012-04-19 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Halbleiterschichtenfolge, strahlungsemittierender Halbleiterchip und optoelektronisches Bauteil |
| KR101749694B1 (ko) | 2010-12-17 | 2017-06-22 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법과 상기 반도체 소자를 포함하는 전자 장치 |
| DE102010056409A1 (de) * | 2010-12-26 | 2012-06-28 | Azzurro Semiconductors Ag | Gruppe-III-Nitrid basierte Schichtenfolge, Halbleiterbauelement, umfassend eine Gruppe-III-Nitrid basierte Schichtenfolge und Verfahren zur Herstellung |
| CN103236395B (zh) * | 2011-05-25 | 2016-09-28 | 新加坡科技研究局 | 在基底上形成纳米结构的方法及其用途 |
| DE102011108080B4 (de) * | 2011-07-21 | 2015-08-20 | Otto-Von-Guericke-Universität Magdeburg | Gruppe-III-Nitrid-basierte Schichtenfolge, deren Verwendung und Verfahren ihrer Herstellung |
| JP5127978B1 (ja) * | 2011-09-08 | 2013-01-23 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法 |
| DE102011114665B4 (de) * | 2011-09-30 | 2023-09-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements |
| JP5175967B1 (ja) | 2011-10-11 | 2013-04-03 | 株式会社東芝 | 半導体発光素子及び半導体ウェーハ |
| JP6156833B2 (ja) * | 2012-10-12 | 2017-07-05 | エア・ウォーター株式会社 | 半導体基板の製造方法 |
| KR102061696B1 (ko) | 2013-11-05 | 2020-01-03 | 삼성전자주식회사 | 반극성 질화물 반도체 구조체 및 이의 제조 방법 |
| US9917156B1 (en) | 2016-09-02 | 2018-03-13 | IQE, plc | Nucleation layer for growth of III-nitride structures |
| JP6264628B2 (ja) * | 2017-01-13 | 2018-01-24 | アルパッド株式会社 | 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法 |
| US12100936B2 (en) * | 2019-10-09 | 2024-09-24 | Panasonic Intellectual Property Management Co., Ltd. | Nitride semiconductor structure, nitride semiconductor device, and method for fabricating the device |
| DE102021107019A1 (de) * | 2021-03-22 | 2022-09-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung einer halbleiterschichtenfolge und halbleiterschichtenfolge |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW523940B (en) * | 2001-02-20 | 2003-03-11 | Showa Denko Kk | III-Group Nitrides Semiconductor Luminescence Diode and Method for preparing the same |
| TW200512959A (en) * | 2003-09-24 | 2005-04-01 | Sanken Electric Co Ltd | Nitride semiconductor device and the manufacturing method thereof |
| CN1882720A (zh) * | 2003-09-26 | 2006-12-20 | 国家科学研究中心 | 通过在牺牲层上的异质外延制造包含ⅲ－氮化物的自承基材的方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2830814B2 (ja) * | 1996-01-19 | 1998-12-02 | 日本電気株式会社 | 窒化ガリウム系化合物半導体の結晶成長方法、及び半導体レーザの製造方法 |
| JPH11135832A (ja) * | 1997-10-26 | 1999-05-21 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体及びその製造方法 |
| US6562644B2 (en) * | 2000-08-08 | 2003-05-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method |
| JP2002185041A (ja) * | 2000-12-15 | 2002-06-28 | Nobuhiko Sawaki | 半導体素子 |
| US6541799B2 (en) * | 2001-02-20 | 2003-04-01 | Showa Denko K.K. | Group-III nitride semiconductor light-emitting diode |
| DE10151092B4 (de) * | 2001-10-13 | 2012-10-04 | Azzurro Semiconductors Ag | Verfahren zur Herstellung von planaren und rißfreien Gruppe-III-Nitrid-basierten Lichtemitterstrukturen auf Silizium Substrat |
| US20030132433A1 (en) * | 2002-01-15 | 2003-07-17 | Piner Edwin L. | Semiconductor structures including a gallium nitride material component and a silicon germanium component |
| JP2004356114A (ja) * | 2003-05-26 | 2004-12-16 | Tadahiro Omi | Ｐチャネルパワーｍｉｓ電界効果トランジスタおよびスイッチング回路 |
| GB0505752D0 (en) * | 2005-03-21 | 2005-04-27 | Element Six Ltd | Diamond based substrate for gan devices |
| WO2007034761A1 (en) * | 2005-09-20 | 2007-03-29 | Showa Denko K.K. | Semiconductor device and method for fabrication thereof |
| JP2007273946A (ja) * | 2006-03-10 | 2007-10-18 | Covalent Materials Corp | 窒化物半導体単結晶膜 |
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2007
- 2007-04-27 DE DE102007020979A patent/DE102007020979A1/de not_active Ceased
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2008
- 2008-04-28 JP JP2010504724A patent/JP2010525595A/ja active Pending
- 2008-04-28 US US12/451,151 patent/US20100133658A1/en not_active Abandoned
- 2008-04-28 ES ES08749803T patent/ES2375591T3/es active Active
- 2008-04-28 TW TW097115627A patent/TWI455182B/zh not_active IP Right Cessation
- 2008-04-28 KR KR1020097024727A patent/KR20100017413A/ko not_active Ceased
- 2008-04-28 EP EP08749803A patent/EP2150970B1/de not_active Not-in-force
- 2008-04-28 IN IN7391DEN2009 patent/IN2009DN07391A/en unknown
- 2008-04-28 WO PCT/EP2008/055181 patent/WO2008132204A2/de not_active Ceased
- 2008-04-28 MY MYPI20094519A patent/MY149217A/en unknown
- 2008-04-28 CN CN2008800225012A patent/CN101689483B/zh not_active Expired - Fee Related
- 2008-04-28 AT AT08749803T patent/ATE533176T1/de active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW523940B (en) * | 2001-02-20 | 2003-03-11 | Showa Denko Kk | III-Group Nitrides Semiconductor Luminescence Diode and Method for preparing the same |
| TW200512959A (en) * | 2003-09-24 | 2005-04-01 | Sanken Electric Co Ltd | Nitride semiconductor device and the manufacturing method thereof |
| CN1882720A (zh) * | 2003-09-26 | 2006-12-20 | 国家科学研究中心 | 通过在牺牲层上的异质外延制造包含ⅲ－氮化物的自承基材的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012231156A (ja) | 2012-11-22 |
| JP2010525595A (ja) | 2010-07-22 |
| EP2150970A2 (de) | 2010-02-10 |
| KR20100017413A (ko) | 2010-02-16 |
| CN101689483B (zh) | 2012-07-04 |
| JP5546583B2 (ja) | 2014-07-09 |
| ES2375591T3 (es) | 2012-03-02 |
| IN2009DN07391A (enExample) | 2015-07-24 |
| MY149217A (en) | 2013-07-31 |
| WO2008132204A3 (de) | 2009-01-22 |
| US20100133658A1 (en) | 2010-06-03 |
| CN101689483A (zh) | 2010-03-31 |
| HK1138941A1 (en) | 2010-09-03 |
| DE102007020979A1 (de) | 2008-10-30 |
| ATE533176T1 (de) | 2011-11-15 |
| TW200913018A (en) | 2009-03-16 |
| EP2150970B1 (de) | 2011-11-09 |
| WO2008132204A2 (de) | 2008-11-06 |
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