ES2375591T3 - Estructura de capas de un componente semiconductor de nitruro sobre una superficie de substrato del grupo iv y procedimiento para su fabricación. - Google Patents

Estructura de capas de un componente semiconductor de nitruro sobre una superficie de substrato del grupo iv y procedimiento para su fabricación. Download PDF

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Publication number
ES2375591T3
ES2375591T3 ES08749803T ES08749803T ES2375591T3 ES 2375591 T3 ES2375591 T3 ES 2375591T3 ES 08749803 T ES08749803 T ES 08749803T ES 08749803 T ES08749803 T ES 08749803T ES 2375591 T3 ES2375591 T3 ES 2375591T3
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group
layer
substrate
nitride
substrate surface
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ES08749803T
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English (en)
Spanish (es)
Inventor
Armin Dadgar
Alois Krost
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Azzurro Semiconductors AG
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Azzurro Semiconductors AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
ES08749803T 2007-04-27 2008-04-28 Estructura de capas de un componente semiconductor de nitruro sobre una superficie de substrato del grupo iv y procedimiento para su fabricación. Active ES2375591T3 (es)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US92644407P 2007-04-27 2007-04-27
US926444P 2007-04-27
DE102007020979 2007-04-27
DE102007020979A DE102007020979A1 (de) 2007-04-27 2007-04-27 Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie
PCT/EP2008/055181 WO2008132204A2 (de) 2007-04-27 2008-04-28 Nitridhalbleiterbauelement-schichtstruktur auf einer gruppe-iv-substratoberfläche

Publications (1)

Publication Number Publication Date
ES2375591T3 true ES2375591T3 (es) 2012-03-02

Family

ID=39777592

Family Applications (1)

Application Number Title Priority Date Filing Date
ES08749803T Active ES2375591T3 (es) 2007-04-27 2008-04-28 Estructura de capas de un componente semiconductor de nitruro sobre una superficie de substrato del grupo iv y procedimiento para su fabricación.

Country Status (12)

Country Link
US (1) US20100133658A1 (enExample)
EP (1) EP2150970B1 (enExample)
JP (2) JP2010525595A (enExample)
KR (1) KR20100017413A (enExample)
CN (1) CN101689483B (enExample)
AT (1) ATE533176T1 (enExample)
DE (1) DE102007020979A1 (enExample)
ES (1) ES2375591T3 (enExample)
IN (1) IN2009DN07391A (enExample)
MY (1) MY149217A (enExample)
TW (1) TWI455182B (enExample)
WO (1) WO2008132204A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4829190B2 (ja) * 2007-08-22 2011-12-07 株式会社東芝 発光素子
DE102009047881B4 (de) * 2009-09-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur
DE102009051521B4 (de) 2009-10-31 2012-04-26 X-Fab Semiconductor Foundries Ag Herstellung von Siliziumhalbleiterscheiben mit III-V-Schichtstrukturen für High Electron Mobility Transistoren (HEMT) und eine entsprechende Halbleiterschichtanordnung
DE102009051520B4 (de) 2009-10-31 2016-11-03 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von Siliziumhalbleiterscheiben mit Schichtstrukturen zur Integration von III-V Halbleiterbauelementen
DE102010027411A1 (de) * 2010-07-15 2012-01-19 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Substrat und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE102010046215B4 (de) 2010-09-21 2019-01-03 Infineon Technologies Austria Ag Halbleiterkörper mit verspanntem Bereich, Elektronisches Bauelement und ein Verfahren zum Erzeugen des Halbleiterkörpers.
KR20120032329A (ko) * 2010-09-28 2012-04-05 삼성전자주식회사 반도체 소자
DE102010048617A1 (de) * 2010-10-15 2012-04-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterschichtenfolge, strahlungsemittierender Halbleiterchip und optoelektronisches Bauteil
KR101749694B1 (ko) 2010-12-17 2017-06-22 삼성전자주식회사 반도체 소자 및 그 제조 방법과 상기 반도체 소자를 포함하는 전자 장치
DE102010056409A1 (de) * 2010-12-26 2012-06-28 Azzurro Semiconductors Ag Gruppe-III-Nitrid basierte Schichtenfolge, Halbleiterbauelement, umfassend eine Gruppe-III-Nitrid basierte Schichtenfolge und Verfahren zur Herstellung
CN103236395B (zh) * 2011-05-25 2016-09-28 新加坡科技研究局 在基底上形成纳米结构的方法及其用途
DE102011108080B4 (de) * 2011-07-21 2015-08-20 Otto-Von-Guericke-Universität Magdeburg Gruppe-III-Nitrid-basierte Schichtenfolge, deren Verwendung und Verfahren ihrer Herstellung
JP5127978B1 (ja) * 2011-09-08 2013-01-23 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
DE102011114665B4 (de) * 2011-09-30 2023-09-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements
JP5175967B1 (ja) 2011-10-11 2013-04-03 株式会社東芝 半導体発光素子及び半導体ウェーハ
JP6156833B2 (ja) * 2012-10-12 2017-07-05 エア・ウォーター株式会社 半導体基板の製造方法
KR102061696B1 (ko) 2013-11-05 2020-01-03 삼성전자주식회사 반극성 질화물 반도체 구조체 및 이의 제조 방법
US9917156B1 (en) 2016-09-02 2018-03-13 IQE, plc Nucleation layer for growth of III-nitride structures
JP6264628B2 (ja) * 2017-01-13 2018-01-24 アルパッド株式会社 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法
US12100936B2 (en) * 2019-10-09 2024-09-24 Panasonic Intellectual Property Management Co., Ltd. Nitride semiconductor structure, nitride semiconductor device, and method for fabricating the device
DE102021107019A1 (de) * 2021-03-22 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung einer halbleiterschichtenfolge und halbleiterschichtenfolge

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Also Published As

Publication number Publication date
IN2009DN07391A (enExample) 2015-07-24
EP2150970A2 (de) 2010-02-10
JP2010525595A (ja) 2010-07-22
WO2008132204A2 (de) 2008-11-06
WO2008132204A3 (de) 2009-01-22
ATE533176T1 (de) 2011-11-15
US20100133658A1 (en) 2010-06-03
TW200913018A (en) 2009-03-16
TWI455182B (zh) 2014-10-01
CN101689483A (zh) 2010-03-31
JP2012231156A (ja) 2012-11-22
JP5546583B2 (ja) 2014-07-09
MY149217A (en) 2013-07-31
CN101689483B (zh) 2012-07-04
HK1138941A1 (en) 2010-09-03
DE102007020979A1 (de) 2008-10-30
KR20100017413A (ko) 2010-02-16
EP2150970B1 (de) 2011-11-09

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