TWI452663B - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

Info

Publication number
TWI452663B
TWI452663B TW097121800A TW97121800A TWI452663B TW I452663 B TWI452663 B TW I452663B TW 097121800 A TW097121800 A TW 097121800A TW 97121800 A TW97121800 A TW 97121800A TW I452663 B TWI452663 B TW I452663B
Authority
TW
Taiwan
Prior art keywords
wire
wires
wiring
semiconductor device
common
Prior art date
Application number
TW097121800A
Other languages
English (en)
Chinese (zh)
Other versions
TW200915520A (en
Inventor
Noriyuki Takahashi
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW200915520A publication Critical patent/TW200915520A/zh
Application granted granted Critical
Publication of TWI452663B publication Critical patent/TWI452663B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
TW097121800A 2007-07-19 2008-06-11 Semiconductor device and manufacturing method thereof TWI452663B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007187789 2007-07-19
JP2007316920A JP5155644B2 (ja) 2007-07-19 2007-12-07 半導体装置

Publications (2)

Publication Number Publication Date
TW200915520A TW200915520A (en) 2009-04-01
TWI452663B true TWI452663B (zh) 2014-09-11

Family

ID=40444481

Family Applications (2)

Application Number Title Priority Date Filing Date
TW097121800A TWI452663B (zh) 2007-07-19 2008-06-11 Semiconductor device and manufacturing method thereof
TW103127991A TWI514534B (zh) 2007-07-19 2008-06-11 Semiconductor device and manufacturing method thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103127991A TWI514534B (zh) 2007-07-19 2008-06-11 Semiconductor device and manufacturing method thereof

Country Status (4)

Country Link
JP (1) JP5155644B2 (ko)
KR (1) KR101477807B1 (ko)
CN (2) CN101452902B (ko)
TW (2) TWI452663B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102044514A (zh) * 2010-04-29 2011-05-04 中颖电子股份有限公司 芯片引线键合区及应用其的半导体器件
JP5798021B2 (ja) * 2011-12-01 2015-10-21 ルネサスエレクトロニクス株式会社 半導体装置
KR102071078B1 (ko) 2012-12-06 2020-01-30 매그나칩 반도체 유한회사 멀티 칩 패키지
CN104103620B (zh) * 2014-07-29 2017-02-15 日月光封装测试(上海)有限公司 引线框架及半导体封装体
CN104485323B (zh) * 2014-12-23 2017-08-25 日月光封装测试(上海)有限公司 引线框架和半导体封装体
CN104547477A (zh) * 2015-01-29 2015-04-29 李秀娟 一种用于肛周脓肿引流术后护理的中药制剂及制备方法
JP2017045944A (ja) 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置
JP6394634B2 (ja) * 2016-03-31 2018-09-26 日亜化学工業株式会社 リードフレーム、パッケージ及び発光装置、並びにこれらの製造方法
US11862540B2 (en) 2020-03-06 2024-01-02 Stmicroelectronics Sdn Bhd Mold flow balancing for a matrix leadframe
CN114203665A (zh) * 2021-12-31 2022-03-18 矽典微电子(上海)有限公司 封装框架及封装结构

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862246A (en) * 1984-09-26 1989-08-29 Hitachi, Ltd. Semiconductor device lead frame with etched through holes
TW363333B (en) * 1995-04-24 1999-07-01 Toshiba Corp Semiconductor apparatus and manufacturing method thereof and electric apparatus
JP2000058739A (ja) * 1998-08-10 2000-02-25 Hitachi Ltd 半導体装置およびその製造に用いるリードフレーム
JP2002043497A (ja) * 2000-07-27 2002-02-08 Mitsubishi Electric Corp 半導体装置
TW497232B (en) * 2000-07-04 2002-08-01 Nippon Electric Co Semiconductor device and method of manufacturing the same
JP2003046051A (ja) * 2001-07-30 2003-02-14 Nec Corp リードフレーム、半導体装置およびその樹脂封止法
US6967128B2 (en) * 2002-06-06 2005-11-22 Renesas Technology Corp. Semiconductor device and method of manufacturing the same
US20060017143A1 (en) * 2002-07-01 2006-01-26 Yoshihiko Shimanuki Semiconductor device and its manufacturing method
US20070004092A1 (en) * 2003-08-29 2007-01-04 Hiromichi Suzuki Semiconductor device manufacturing method
US7176557B2 (en) * 2004-03-23 2007-02-13 Renesas Technology Corp. Semiconductor device
JP2007180077A (ja) * 2005-12-27 2007-07-12 Renesas Technology Corp 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791472A (en) * 1985-09-23 1988-12-13 Hitachi, Ltd. Lead frame and semiconductor device using the same
JPS6476745A (en) * 1987-09-17 1989-03-22 Hitachi Ltd Lead frame
JPH01106461A (ja) * 1987-10-20 1989-04-24 Fujitsu Ltd リードフレーム
US5543657A (en) * 1994-10-07 1996-08-06 International Business Machines Corporation Single layer leadframe design with groundplane capability
JPH11168169A (ja) * 1997-12-04 1999-06-22 Hitachi Ltd リードフレームおよびそれを用いた半導体装置ならびにその製造方法
JP2003023134A (ja) * 2001-07-09 2003-01-24 Hitachi Ltd 半導体装置およびその製造方法
US6953709B2 (en) * 2001-07-31 2005-10-11 Renesas Technology Corp. Semiconductor device and its manufacturing method
KR100958400B1 (ko) * 2002-06-05 2010-05-18 가부시끼가이샤 르네사스 테크놀로지 반도체장치
US7064420B2 (en) * 2002-09-30 2006-06-20 St Assembly Test Services Ltd. Integrated circuit leadframe with ground plane
JP4159431B2 (ja) * 2002-11-15 2008-10-01 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2005191342A (ja) * 2003-12-26 2005-07-14 Renesas Technology Corp 半導体装置およびその製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862246A (en) * 1984-09-26 1989-08-29 Hitachi, Ltd. Semiconductor device lead frame with etched through holes
TW363333B (en) * 1995-04-24 1999-07-01 Toshiba Corp Semiconductor apparatus and manufacturing method thereof and electric apparatus
JP2000058739A (ja) * 1998-08-10 2000-02-25 Hitachi Ltd 半導体装置およびその製造に用いるリードフレーム
TW497232B (en) * 2000-07-04 2002-08-01 Nippon Electric Co Semiconductor device and method of manufacturing the same
JP2002043497A (ja) * 2000-07-27 2002-02-08 Mitsubishi Electric Corp 半導体装置
JP2003046051A (ja) * 2001-07-30 2003-02-14 Nec Corp リードフレーム、半導体装置およびその樹脂封止法
US6967128B2 (en) * 2002-06-06 2005-11-22 Renesas Technology Corp. Semiconductor device and method of manufacturing the same
US20060017143A1 (en) * 2002-07-01 2006-01-26 Yoshihiko Shimanuki Semiconductor device and its manufacturing method
US20070004092A1 (en) * 2003-08-29 2007-01-04 Hiromichi Suzuki Semiconductor device manufacturing method
US7176557B2 (en) * 2004-03-23 2007-02-13 Renesas Technology Corp. Semiconductor device
JP2007180077A (ja) * 2005-12-27 2007-07-12 Renesas Technology Corp 半導体装置

Also Published As

Publication number Publication date
KR101477807B1 (ko) 2014-12-30
CN101452902B (zh) 2012-08-08
JP5155644B2 (ja) 2013-03-06
TW201445691A (zh) 2014-12-01
TW200915520A (en) 2009-04-01
CN102709268B (zh) 2015-04-08
KR20090009142A (ko) 2009-01-22
JP2009044114A (ja) 2009-02-26
TWI514534B (zh) 2015-12-21
CN101452902A (zh) 2009-06-10
CN102709268A (zh) 2012-10-03

Similar Documents

Publication Publication Date Title
TWI452663B (zh) Semiconductor device and manufacturing method thereof
KR100864781B1 (ko) 반도체 장치
US6638790B2 (en) Leadframe and method for manufacturing resin-molded semiconductor device
US8148200B2 (en) Semiconductor device and manufacturing method of the same
US6553657B2 (en) Semiconductor device
JPH0878605A (ja) リードフレームおよびそれを用いた半導体集積回路装置
JPH06283650A (ja) 半導体装置
JPH09312375A (ja) リードフレーム、半導体装置及び半導体装置の製造方法
US8368191B2 (en) Semiconductor device and manufacturing method of the same
US6774464B2 (en) Semiconductor device and method of manufacturing the same
JPH11168169A (ja) リードフレームおよびそれを用いた半導体装置ならびにその製造方法
JP2006216993A (ja) 樹脂封止型半導体装置
JP4651218B2 (ja) 半導体装置の製造方法
JP2002164496A (ja) 半導体装置およびその製造方法
JP3938525B2 (ja) 半導体装置の製造方法
JP3468447B2 (ja) 樹脂封止型半導体装置及びその製造方法
JP3915338B2 (ja) リードフレームとそれを用いた樹脂封止型半導体装置の製造方法
JPH1092967A (ja) 底面突起状端子配列型集積回路装置及びその製造方法
JP2003007953A (ja) 樹脂封止型半導体装置およびその製造方法
JP2001044351A (ja) 半導体装置およびその製造方法
JP2005303169A (ja) 半導体装置およびその製造方法
JPH06204380A (ja) リードフレーム及びこれを用いた樹脂封止型半導体装置
JP2019087565A (ja) 半導体装置
JP2004343151A (ja) 半導体装置およびその製造方法
JP2006013391A (ja) 半導体装置およびその製造方法