TWI452417B - 遮罩基底用基板之製造方法、遮罩基底之製造方法、遮罩之製造方法及遮罩基底用基板 - Google Patents

遮罩基底用基板之製造方法、遮罩基底之製造方法、遮罩之製造方法及遮罩基底用基板 Download PDF

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Publication number
TWI452417B
TWI452417B TW097129758A TW97129758A TWI452417B TW I452417 B TWI452417 B TW I452417B TW 097129758 A TW097129758 A TW 097129758A TW 97129758 A TW97129758 A TW 97129758A TW I452417 B TWI452417 B TW I452417B
Authority
TW
Taiwan
Prior art keywords
substrate
mask
mark
end faces
manufacturing
Prior art date
Application number
TW097129758A
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English (en)
Chinese (zh)
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TW200907561A (en
Inventor
Yasushi Okubo
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200907561A publication Critical patent/TW200907561A/zh
Application granted granted Critical
Publication of TWI452417B publication Critical patent/TWI452417B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60Substrates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW097129758A 2007-08-07 2008-08-06 遮罩基底用基板之製造方法、遮罩基底之製造方法、遮罩之製造方法及遮罩基底用基板 TWI452417B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007204922 2007-08-07

Publications (2)

Publication Number Publication Date
TW200907561A TW200907561A (en) 2009-02-16
TWI452417B true TWI452417B (zh) 2014-09-11

Family

ID=40227139

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097129758A TWI452417B (zh) 2007-08-07 2008-08-06 遮罩基底用基板之製造方法、遮罩基底之製造方法、遮罩之製造方法及遮罩基底用基板

Country Status (6)

Country Link
US (2) US7648807B2 (enExample)
JP (1) JP5046394B2 (enExample)
KR (1) KR101512515B1 (enExample)
CN (1) CN101364042B (enExample)
DE (1) DE102008036471A1 (enExample)
TW (1) TWI452417B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4536804B2 (ja) * 2008-06-27 2010-09-01 Hoya株式会社 フォトマスクの製造方法
CN101833235B (zh) * 2009-03-13 2012-11-14 中芯国际集成电路制造(上海)有限公司 掩模版原片的质量检测系统和方法
TW201113631A (en) * 2009-10-14 2011-04-16 Evervision Electronics Co Ltd Improved light mask manufacturing process
JP5296260B2 (ja) * 2010-03-30 2013-09-25 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法及び半導体デバイスの製造方法
JP6460619B2 (ja) * 2012-03-12 2019-01-30 Hoya株式会社 反射型マスクブランク及び反射型マスクの製造方法
FR2994605B1 (fr) * 2012-08-20 2014-08-22 Commissariat Energie Atomique Procede de fabrication de masques euv minimisant l'impact des defauts de substrat
DE102013107215B3 (de) * 2013-07-09 2014-10-09 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines Spiegelsubstrat-Rohlings aus Titan-dotiertem Kieselglas für die EUV-Lithographie, sowie System zur Positionsbestimmung von Defekten in einem Rohling
FR3017478A1 (fr) * 2014-02-11 2015-08-14 Saint Gobain Procede de lecture d'un code d'identification sur une feuille de verre
US11141370B2 (en) 2017-06-06 2021-10-12 The Procter And Gamble Company Hair compositions comprising a cationic polymer mixture and providing improved in-use wet feel
EP3727323A1 (en) 2017-12-20 2020-10-28 The Procter & Gamble Company Clear shampoo composition containing silicone polymers

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JP2003035680A (ja) * 2001-07-24 2003-02-07 Hitachi Ltd 半導体デバイスの検査方法
TW200424751A (en) * 2003-03-26 2004-11-16 Hoya Corp Substrate for photomask, photomask blank and photomask
TW200516350A (en) * 2003-11-04 2005-05-16 Grace Semiconductor Mfg Corp Photo mask with photolithography photoresist detecting pattern and its detecting method
US20060246361A1 (en) * 2005-03-30 2006-11-02 Hoya Corporation Mask blank glass substrate manufacturing method, mask blank manufacturing method, mask manufacturing method, mask blank glass substrate, mask blank, and mask

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JPS58144829A (ja) * 1982-02-22 1983-08-29 Hoya Corp フオトマスクブランクス用基板のマ−キング方法
JPS5915938A (ja) * 1982-07-19 1984-01-27 Hoya Corp マ−キングを施されたフオトマスクブランクス用基板
JPS6354146U (enExample) * 1986-09-26 1988-04-12
JPH02962A (ja) * 1988-05-25 1990-01-05 Mitsubishi Electric Corp フォトマスクの作成方法
JPH03255445A (ja) * 1990-03-05 1991-11-14 Nec Corp フォトマスク基板
JPH0571855U (ja) * 1992-02-28 1993-09-28 大日本印刷株式会社 フォトマスク用ガラス基板
US5956564A (en) * 1997-06-03 1999-09-21 Ultratech Stepper, Inc. Method of making a side alignment mark
JPH1165093A (ja) * 1997-08-19 1999-03-05 Canon Inc 基板管理装置、基板収納容器、基板収納装置、およびデバイス製造方法
JPH1165088A (ja) * 1997-08-19 1999-03-05 Canon Inc デバイス製造用の基板
JP3673632B2 (ja) * 1997-12-26 2005-07-20 Hoya株式会社 透光性物質の不均一性検査方法及びその装置、並びに透明基板
JP3898326B2 (ja) * 1998-02-10 2007-03-28 大日本印刷株式会社 生産工程管理方法、およびid付基板
JP2001033941A (ja) * 1999-07-16 2001-02-09 Toshiba Corp パターン形成方法及び露光装置
JP2002116533A (ja) * 2000-10-11 2002-04-19 Dainippon Printing Co Ltd エリアコード付きフォトマスク用ブランクスとエリアコード付きフォトマスク、およびフォトマスクの製造方法
CN100580549C (zh) * 2002-12-03 2010-01-13 Hoya株式会社 光掩模坯料和光掩膜
WO2005079470A2 (en) 2004-02-17 2005-09-01 Toppan Photomasks, Inc. Photomask and method for conveying information associated with a photomask substrate
JP4339214B2 (ja) * 2004-09-13 2009-10-07 Hoya株式会社 マスクブランク用透明基板とその製造方法及びマスクブランクとその製造方法
CN1841189A (zh) * 2005-03-30 2006-10-04 Hoya株式会社 掩模板玻璃衬底制造方法、掩模板制造方法、掩模制造方法、掩模板玻璃衬底、掩模板和掩模
JP4591367B2 (ja) 2006-01-31 2010-12-01 トヨタ自動車株式会社 壁間防水構造

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2003035680A (ja) * 2001-07-24 2003-02-07 Hitachi Ltd 半導体デバイスの検査方法
TW200424751A (en) * 2003-03-26 2004-11-16 Hoya Corp Substrate for photomask, photomask blank and photomask
TW200516350A (en) * 2003-11-04 2005-05-16 Grace Semiconductor Mfg Corp Photo mask with photolithography photoresist detecting pattern and its detecting method
US20060246361A1 (en) * 2005-03-30 2006-11-02 Hoya Corporation Mask blank glass substrate manufacturing method, mask blank manufacturing method, mask manufacturing method, mask blank glass substrate, mask blank, and mask

Also Published As

Publication number Publication date
KR101512515B1 (ko) 2015-04-15
CN101364042B (zh) 2012-10-24
US7794900B2 (en) 2010-09-14
TW200907561A (en) 2009-02-16
US20090042109A1 (en) 2009-02-12
DE102008036471A1 (de) 2009-02-12
US20100081069A1 (en) 2010-04-01
CN101364042A (zh) 2009-02-11
JP5046394B2 (ja) 2012-10-10
JP2009058950A (ja) 2009-03-19
KR20090014988A (ko) 2009-02-11
US7648807B2 (en) 2010-01-19

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