TWI446502B - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
TWI446502B
TWI446502B TW096136919A TW96136919A TWI446502B TW I446502 B TWI446502 B TW I446502B TW 096136919 A TW096136919 A TW 096136919A TW 96136919 A TW96136919 A TW 96136919A TW I446502 B TWI446502 B TW I446502B
Authority
TW
Taiwan
Prior art keywords
wafer
semiconductor device
wire
lead frame
manufacturing
Prior art date
Application number
TW096136919A
Other languages
English (en)
Chinese (zh)
Other versions
TW200834858A (en
Inventor
田中茂樹
Original Assignee
瑞薩電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞薩電子股份有限公司 filed Critical 瑞薩電子股份有限公司
Publication of TW200834858A publication Critical patent/TW200834858A/zh
Application granted granted Critical
Publication of TWI446502B publication Critical patent/TWI446502B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Measuring Magnetic Variables (AREA)
TW096136919A 2006-11-02 2007-10-02 Manufacturing method of semiconductor device TWI446502B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006298433A JP2008117875A (ja) 2006-11-02 2006-11-02 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200834858A TW200834858A (en) 2008-08-16
TWI446502B true TWI446502B (zh) 2014-07-21

Family

ID=39359027

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096136919A TWI446502B (zh) 2006-11-02 2007-10-02 Manufacturing method of semiconductor device

Country Status (5)

Country Link
US (1) US8193041B2 (https=)
JP (1) JP2008117875A (https=)
KR (1) KR20080040582A (https=)
CN (2) CN101937856B (https=)
TW (1) TWI446502B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5334239B2 (ja) * 2008-06-24 2013-11-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5380244B2 (ja) * 2009-10-22 2014-01-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN105023905B (zh) * 2015-07-31 2018-01-16 日月光封装测试(上海)有限公司 导线框架和使用该导线框架的功率集成电路封装件
JP7048573B2 (ja) * 2016-08-01 2022-04-07 ▲寧▼波舜宇光▲電▼信息有限公司 カメラモジュールおよびそのモールド回路基板組立体とモールド感光組立体並びに製造方法
JP7043225B2 (ja) * 2017-11-08 2022-03-29 株式会社東芝 半導体装置
US11227810B2 (en) * 2017-11-10 2022-01-18 Shindengen Electric Manufacturing Co., Ltd. Electronic module with a groove and press hole on the surface of a conductor
JP7192688B2 (ja) 2019-07-16 2022-12-20 Tdk株式会社 電子部品パッケージ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100472833C (zh) * 2002-07-29 2009-03-25 雅马哈株式会社 磁性传感器及传感器器件
EP1387146A3 (en) * 2002-07-29 2006-05-31 Yamaha Corporation Manufacturing method for magnetic sensor and lead frame therefor
JP2006100348A (ja) 2004-09-28 2006-04-13 Yamaha Corp 物理量センサの製造方法
JP2006269859A (ja) * 2005-03-25 2006-10-05 Yamaha Corp 物理量センサ、およびこれに使用するリードフレーム
JP4314580B2 (ja) * 2004-10-01 2009-08-19 ヤマハ株式会社 物理量センサ、およびこれに使用するリードフレーム
US7791180B2 (en) * 2004-10-01 2010-09-07 Yamaha Corporation Physical quantity sensor and lead frame used for same
TWI280399B (en) * 2004-10-01 2007-05-01 Yamaha Corp Physical amount sensor and lead frame used therein
US7595548B2 (en) * 2004-10-08 2009-09-29 Yamaha Corporation Physical quantity sensor and manufacturing method therefor
JP4345685B2 (ja) * 2005-02-22 2009-10-14 ヤマハ株式会社 物理量センサ、これに使用するリードフレーム、及び、リードフレームの製造方法
US20060185452A1 (en) * 2005-02-22 2006-08-24 Yamaha Corporation Lead frame, sensor including lead frame, resin composition to be used for resin mold in the sensor, and sensor including the resin mold
KR100740358B1 (ko) * 2005-02-25 2007-07-16 야마하 가부시키가이샤 센서 및 센서 형성 방법
JP4652281B2 (ja) * 2006-05-29 2011-03-16 パナソニック株式会社 樹脂封止型半導体装置

Also Published As

Publication number Publication date
CN101174603A (zh) 2008-05-07
TW200834858A (en) 2008-08-16
KR20080040582A (ko) 2008-05-08
US8193041B2 (en) 2012-06-05
CN101937856B (zh) 2014-04-16
CN101937856A (zh) 2011-01-05
US20080105959A1 (en) 2008-05-08
JP2008117875A (ja) 2008-05-22

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