JP7442333B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP7442333B2 JP7442333B2 JP2020021132A JP2020021132A JP7442333B2 JP 7442333 B2 JP7442333 B2 JP 7442333B2 JP 2020021132 A JP2020021132 A JP 2020021132A JP 2020021132 A JP2020021132 A JP 2020021132A JP 7442333 B2 JP7442333 B2 JP 7442333B2
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- Prior art keywords
- semiconductor device
- die pad
- semiconductor element
- sealing resin
- recess
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 159
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000007789 sealing Methods 0.000 claims description 68
- 239000011347 resin Substances 0.000 claims description 59
- 229920005989 resin Polymers 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 18
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 230000035945 sensitivity Effects 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 18
- 238000007747 plating Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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Description
フルモールドタイプの半導体装置において、ダイパッドの上下の樹脂厚を同一とすることで、半導体装置の実装時の応力に起因する反りを低減することが提案されている(例えば、特許文献1参照)。
本発明は、かかる課題に鑑みてなされたもので、ノンリードタイプの半導体装置であっても半導体素子への応力を低減することができる半導体装置の提供を目的とする。
ダイパッドと、
前記ダイパッド上に搭載された半導体素子と、
前記ダイパッドと離間して配置され、前記半導体素子と電気的に接続されたリードと、
前記ダイパッドと前記半導体素子と前記リードとを封止している封止樹脂と、を備え、
前記半導体素子の応力に対する感度の高い素子領域を有し、前記素子領域の上方に位置する前記封止樹脂の表面に凹部が設けられていることを特徴とする半導体装置とする。
また、ダイパッドと、
前記ダイパッド上に搭載された半導体素子と、
前記ダイパッドと離間して配置され、前記半導体素子と電気的に接続されたリードと、
前記ダイパッドと前記半導体素子と前記リードとを封止している封止樹脂と、を備える半導体装置の製造方法であって、
前記ダイパッド上に前記半導体素子が搭載され、前記ダイパッドと離間して配置したリードを用意する工程と、
前記半導体素子が搭載された前記ダイパッドと前記リードを封止するための金型であって、前記凹部を形成するための凸部を有する金型を用意する工程と、
前記半導体素子が搭載された前記ダイパッドを封止するとともに、前記半導体素子の応力に対する感度の高い素子領域の上方に位置する前記封止樹脂の表面に、前記凸部と相対する凹部を形成する工程と、からなることを特徴とする半導体装置の製造方法を用いる。
図1は、本発明の第1実施形態にかかる半導体装置の構造図である。図1(a)の断面図に示すように、銅(Cu)合金などからなるダイパッド5上に半導体素子1が搭載されている。ダイパッド5の周囲にはダイパッド5と離間してリード4が設けられている。そして、半導体素子1の上面に設けられた電極パッド(図示せず)とリード4の上面とが接続部材であるワイヤ3を介して電気的に接続されている。ワイヤ3の材料としては金(Au)や銅(Cu)が用いられる。なお、半導体素子1とリード4との電気的接続はワイヤ法に限られることなく、バンプを介したフリップチップボンディング法を用いても構わない。
以上では、封止樹脂2の2つの側面のそれぞれにリード4を設けたDFN(Dual Flat Non-leaded)パッケージの例で説明したが、本技術は封止樹脂2の4つの側面のそれぞれにリード4を設けたQFN(Quad Flat Non-leaded)パッケージにも適用可能である。
ダイパッド5上に半導体素子1が搭載され、ダイパッド5の周囲にはダイパッド5と離間してリード4が設けられている。半導体素子1上の電極パッド(図示せず)とリード4がワイヤ3を介して電気的に接続されている。リード4はインナーリード部4aとアウターリード部4bからなり、インナーリード部4aがアウターリード部4bよりも高くなるように折り曲げられている。そして、ダイパッド5上の半導体素子1、ワイヤ3、リード4は封止樹脂2によって封止されている。ダイパッド5の半導体素子1搭載面と反対側である裏面は封止樹脂2から露出し、その露出面はメッキ層12にて被覆されており、放熱性にすぐれている。ダイパッド5の上端部にはダイパッド5の厚みを薄くした肉薄部5aが設けられ、肉薄部5aの裏面には封止樹脂2が回り込んでダイパッド5が封止樹脂から抜けにくい構造となっている。
リード4のインナーリード部4aは封止樹脂2によって封止されているが、封止樹脂2の底面と同一平面となるダイパッド5の裏面およびアウターリード部4bの底面は封止樹脂2から露出し、メッキ層12で覆われている。
なお、図3では半球面を採用した例を図示しているが、この例に限らず、様々な曲率を有する凹状曲面を適用でき、図示した例よりも深さが浅い曲面を適用しても構わない。
以上では、封止樹脂2の2つの側面のそれぞれにリード4を設けたDFN(Dual Flat Non-leaded)パッケージの例で説明したが、本技術は封止樹脂2の4つの側面のそれぞれにリード4を設けたQFN(Quad Flat Non-leaded)パッケージにも適用可能である。また、凹部69には図1乃至図3で説明した平面形状や断面形状を適用することも可能である。
次いで、図7(c)に示すように、ダイパッド5上に半導体素子1を搭載し、半導体素子1上に設けられた電極パッド(図示せず)とリード4とをワイヤ3を介して電気的に接続する。
1a 応力に対する感度が高い素子領域
1b 応力に対する感度が低い素子領域
2 封止樹脂
3 ワイヤ
4 リード
4a インナーリード部
4b アウターリード部
5 ダイパッド
5a 肉薄部
6 電極パッド
7 リードフレーム
7a ユニット
7b フレーム枠
7c 吊りリード
8 金型
8a 上金型
8b 下金型
9 キャビティ
10 凸部
11 バンプ電極
12 メッキ層
13 放熱板
14 回転ブレード
15 封止体
21、22、23、24,25、26、27、28、29 半導体装置
61、62、63、64、65、66、67、68、69 凹部
61a 加工後の凹部
Claims (10)
- ダイパッドと、
前記ダイパッド上に搭載された半導体素子と、
前記ダイパッドと離間して配置され、前記半導体素子と電気的に接続されたリードと、
前記ダイパッドと前記半導体素子と前記リードとを封止している封止樹脂と、を備え、
前記半導体素子は応力に対する感度の高い素子領域を有し、前記素子領域の上方に位置する前記封止樹脂の表面に凹部が設けられており、
前記凹部の平面投影領域が前記半導体素子の一部を囲むものであって前記感度の高い素子領域を選択的に囲んで設けられ、
前記ダイパッドの前記半導体素子を搭載する面の反対側の面は前記封止樹脂から露出していることを特徴とする半導体装置。 - 前記平面投影領域の周縁部が多角形を成し、そのすべての内角が鈍角であることを特徴とする請求項1記載の半導体装置。
- 前記平面投影領域の周縁部が円もしくは楕円であることを特徴とする請求項1記載の半導体装置。
- 前記平面投影領域が前記半導体素子の電極パッド形成領域を除き、その内側領域に設けられていることを特徴とする請求項1乃至3のいずれか1項記載の半導体装置。
- 断面視的に、前記凹部は逆台形形状であることを特徴とする請求項1乃至4のいずれか1項記載の半導体装置。
- 前記凹部は曲面の一部であることを特徴とする請求項3または4記載の半導体装置。
- ダイパッドと、
前記ダイパッド上に搭載された半導体素子と、
前記ダイパッドと離間して配置され、前記半導体素子と電気的に接続されたリードと、
前記ダイパッドと前記半導体素子と前記リードとを封止している封止樹脂と、を備える半導体装置の製造方法であって、
前記ダイパッド上に前記半導体素子が搭載され、前記ダイパッドと離間して配置したリードを用意する工程と、
前記半導体素子が搭載された前記ダイパッドと前記リードを封止するための金型であって、凹部を形成するための凸部を有する金型を用意する工程と、
前記半導体素子が搭載された前記ダイパッドを封止するとともに前記ダイパッドの前記半導体素子を搭載する面の反対側の面は前記封止樹脂から露出させ、前記半導体素子の応力に対する感度の高い素子領域の上方に位置する前記封止樹脂の表面に、前記凸部と相対する凹部を形成し、前記凹部の平面投影領域が前記半導体素子の一部を囲むものであって前記感度の高い素子領域を選択的に囲んで設けられる工程と、からなることを特徴とする半導体装置の製造方法。 - さらに、前記半導体装置の電気特性を検査する工程と、
前記検査する工程で得られた電気特性を補正する工程と、を備え、
前記補正する工程は、前記凹部の底面を除去することを特徴とする請求項7記載の半導体装置の製造方法。 - 前記凹部の底面を除去する工程は、レーザー加工によって前記封止樹脂の一部を除去することを特徴とする請求項8記載の半導体装置の製造方法。
- 前記凹部の底面を除去する工程は、ルーター加工によって前記封止樹脂の一部を除去することを特徴とする請求項8記載の半導体装置の製造方法。
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JP2001127212A (ja) | 1999-10-26 | 2001-05-11 | Hitachi Ltd | 半導体装置および半導体装置の製造方法 |
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