TWI436425B - 改善選擇性氧化處理之氧化物成長速率的方法 - Google Patents
改善選擇性氧化處理之氧化物成長速率的方法 Download PDFInfo
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- TWI436425B TWI436425B TW100132118A TW100132118A TWI436425B TW I436425 B TWI436425 B TW I436425B TW 100132118 A TW100132118 A TW 100132118A TW 100132118 A TW100132118 A TW 100132118A TW I436425 B TWI436425 B TW I436425B
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- hydrogen
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- substrate
- gas mixture
- oxidizing
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
- H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
- H10D64/01354—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
Landscapes
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/860,161 US7951728B2 (en) | 2007-09-24 | 2007-09-24 | Method of improving oxide growth rate of selective oxidation processes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201207939A TW201207939A (en) | 2012-02-16 |
| TWI436425B true TWI436425B (zh) | 2014-05-01 |
Family
ID=40297951
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100132118A TWI436425B (zh) | 2007-09-24 | 2008-09-24 | 改善選擇性氧化處理之氧化物成長速率的方法 |
| TW97136758A TWI389206B (zh) | 2007-09-24 | 2008-09-24 | 改善選擇性氧化處理之氧化物成長速率的方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97136758A TWI389206B (zh) | 2007-09-24 | 2008-09-24 | 改善選擇性氧化處理之氧化物成長速率的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US7951728B2 (https=) |
| EP (2) | EP3540763A1 (https=) |
| JP (2) | JP5451018B2 (https=) |
| KR (1) | KR101028441B1 (https=) |
| CN (2) | CN104269343A (https=) |
| SG (1) | SG151226A1 (https=) |
| TW (2) | TWI436425B (https=) |
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2007
- 2007-09-24 US US11/860,161 patent/US7951728B2/en active Active
-
2008
- 2008-09-19 EP EP19170626.6A patent/EP3540763A1/en not_active Withdrawn
- 2008-09-19 EP EP08164739.8A patent/EP2040287B1/en active Active
- 2008-09-23 SG SG200807086-4A patent/SG151226A1/en unknown
- 2008-09-24 TW TW100132118A patent/TWI436425B/zh active
- 2008-09-24 CN CN201410386390.0A patent/CN104269343A/zh active Pending
- 2008-09-24 CN CNA2008101612480A patent/CN101404253A/zh active Pending
- 2008-09-24 JP JP2008244684A patent/JP5451018B2/ja active Active
- 2008-09-24 KR KR20080093627A patent/KR101028441B1/ko active Active
- 2008-09-24 TW TW97136758A patent/TWI389206B/zh active
-
2011
- 2011-05-27 US US13/117,931 patent/US8546271B2/en active Active
- 2011-09-15 JP JP2011201340A patent/JP2012044192A/ja active Pending
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2013
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Also Published As
| Publication number | Publication date |
|---|---|
| US20110230060A1 (en) | 2011-09-22 |
| CN101404253A (zh) | 2009-04-08 |
| US20140057455A1 (en) | 2014-02-27 |
| JP2012044192A (ja) | 2012-03-01 |
| EP2040287A3 (en) | 2012-08-08 |
| US20090081884A1 (en) | 2009-03-26 |
| KR20090031658A (ko) | 2009-03-27 |
| JP5451018B2 (ja) | 2014-03-26 |
| EP2040287A2 (en) | 2009-03-25 |
| EP2040287B1 (en) | 2019-06-05 |
| SG151226A1 (en) | 2009-04-30 |
| EP3540763A1 (en) | 2019-09-18 |
| CN104269343A (zh) | 2015-01-07 |
| JP2009158918A (ja) | 2009-07-16 |
| US7951728B2 (en) | 2011-05-31 |
| US8546271B2 (en) | 2013-10-01 |
| US9117661B2 (en) | 2015-08-25 |
| KR101028441B1 (ko) | 2011-04-14 |
| TWI389206B (zh) | 2013-03-11 |
| TW200926298A (en) | 2009-06-16 |
| TW201207939A (en) | 2012-02-16 |
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