KR101028441B1 - 선택적 산화 프로세스의 산화물 성장 속도를 향상시키는 방법 - Google Patents

선택적 산화 프로세스의 산화물 성장 속도를 향상시키는 방법 Download PDF

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KR101028441B1
KR101028441B1 KR20080093627A KR20080093627A KR101028441B1 KR 101028441 B1 KR101028441 B1 KR 101028441B1 KR 20080093627 A KR20080093627 A KR 20080093627A KR 20080093627 A KR20080093627 A KR 20080093627A KR 101028441 B1 KR101028441 B1 KR 101028441B1
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chamber
substrate
gas
hydrogen
containing gas
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KR20090031658A (ko
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요시타카 요코타
노르만 아이. 탐
바라수브라마니안 라마찬드란
마르틴 존 리플리
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01354—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

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  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR20080093627A 2007-09-24 2008-09-24 선택적 산화 프로세스의 산화물 성장 속도를 향상시키는 방법 Active KR101028441B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/860,161 US7951728B2 (en) 2007-09-24 2007-09-24 Method of improving oxide growth rate of selective oxidation processes
US11/860,161 2007-09-24

Publications (2)

Publication Number Publication Date
KR20090031658A KR20090031658A (ko) 2009-03-27
KR101028441B1 true KR101028441B1 (ko) 2011-04-14

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Country Link
US (3) US7951728B2 (https=)
EP (2) EP3540763A1 (https=)
JP (2) JP5451018B2 (https=)
KR (1) KR101028441B1 (https=)
CN (2) CN104269343A (https=)
SG (1) SG151226A1 (https=)
TW (2) TWI436425B (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5211464B2 (ja) * 2006-10-20 2013-06-12 東京エレクトロン株式会社 被処理体の酸化装置
US7951728B2 (en) 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
WO2010147937A2 (en) * 2009-06-15 2010-12-23 Applied Materials, Inc. Enhancing nand flash floating gate performance
JP5396180B2 (ja) * 2009-07-27 2014-01-22 東京エレクトロン株式会社 選択酸化処理方法、選択酸化処理装置およびコンピュータ読み取り可能な記憶媒体
KR102028779B1 (ko) * 2012-02-13 2019-10-04 어플라이드 머티어리얼스, 인코포레이티드 기판의 선택적 산화를 위한 방법 및 장치
US20140015031A1 (en) * 2012-07-12 2014-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and Method for Memory Device
CN103165432B (zh) * 2013-03-15 2016-08-03 上海华力微电子有限公司 一种栅氧化层的制备方法
JP5636575B2 (ja) * 2013-08-28 2014-12-10 株式会社ユーテック 水蒸気加圧急速加熱装置及び酸化物材料膜の製造方法
US20160254145A1 (en) * 2015-02-27 2016-09-01 Globalfoundries Inc. Methods for fabricating semiconductor structure with condensed silicon germanium layer
WO2018052476A1 (en) 2016-09-14 2018-03-22 Applied Materials, Inc. Steam oxidation initiation for high aspect ratio conformal radical oxidation
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP7190450B2 (ja) 2017-06-02 2022-12-15 アプライド マテリアルズ インコーポレイテッド 炭化ホウ素ハードマスクのドライストリッピング
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP7330181B2 (ja) 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
TW202321493A (zh) 2017-12-20 2023-06-01 美商應用材料股份有限公司 金屬薄膜之高壓氧化
KR102649241B1 (ko) 2018-01-24 2024-03-18 어플라이드 머티어리얼스, 인코포레이티드 고압 어닐링을 사용한 심 힐링
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
KR102528076B1 (ko) 2018-10-30 2023-05-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 구조를 식각하기 위한 방법들
WO2020101935A1 (en) 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11322347B2 (en) 2018-12-14 2022-05-03 Applied Materials, Inc. Conformal oxidation processes for 3D NAND
CN113557589B (zh) * 2019-03-20 2025-05-13 应用材料公司 在热氧化物品质的低温生长厚氧化物膜的方法
TW202107528A (zh) 2019-04-30 2021-02-16 美商得昇科技股份有限公司 氫氣輔助的大氣自由基氧化
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
US11569245B2 (en) * 2020-10-22 2023-01-31 Applied Materials, Inc. Growth of thin oxide layer with amorphous silicon and oxidation
US11610776B2 (en) 2021-02-08 2023-03-21 Applied Materials, Inc. Method of linearized film oxidation growth
US11996305B2 (en) 2021-06-29 2024-05-28 Applied Materials, Inc. Selective oxidation on rapid thermal processing (RTP) chamber with active steam generation
EP4471831A4 (en) * 2022-01-24 2026-02-18 Hpsp Co Ltd METHOD FOR MANUFACTURING SEMICONDUCTOR PROCESS INSULATION FILM
US20250161858A1 (en) * 2023-11-20 2025-05-22 Applied Materials, Inc. Inline filtration for steam applications

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1174263A (ja) 1997-07-04 1999-03-16 Fuji Electric Co Ltd 炭化けい素半導体装置の熱酸化膜形成方法
US20020177276A1 (en) 2001-05-25 2002-11-28 Chin-Ta Su Method of forming tunnel oxide layer
KR20050094183A (ko) * 2004-03-22 2005-09-27 삼성전자주식회사 화학 기상 증착 장치 및 이를 이용한 산화막 형성 방법
KR20060042203A (ko) * 2004-02-25 2006-05-12 도쿄 엘렉트론 가부시키가이샤 피처리체의 산화 방법, 산화 장치 및 기억 매체

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132136A (ja) * 1983-01-19 1984-07-30 Hitachi Ltd 半導体装置の製造方法
US5015587A (en) * 1988-08-08 1991-05-14 Phillips Petroleum Company Reformer optimization for head limited recycle system
JPH07183477A (ja) * 1993-12-22 1995-07-21 Nec Corp 半導体基板の製造方法
TW577128B (en) * 1997-03-05 2004-02-21 Hitachi Ltd Method for fabricating semiconductor integrated circuit device
US6005225A (en) * 1997-03-28 1999-12-21 Silicon Valley Group, Inc. Thermal processing apparatus
US5851892A (en) * 1997-05-07 1998-12-22 Cypress Semiconductor Corp. Fabrication sequence employing an oxide formed with minimized inducted charge and/or maximized breakdown voltage
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
JPH10340909A (ja) * 1997-06-06 1998-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
US6037273A (en) * 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
TW374853B (en) 1997-08-04 1999-11-21 Toshiba Corp Dry etching method of thin film and method for manufacturing thin film semiconductor device
EP0910119B1 (en) * 1997-10-14 2009-06-03 Texas Instruments Incorporated Method for oxidizing a structure during the fabrication of a semiconductor device
TW421849B (en) 1998-02-23 2001-02-11 Winbond Electronics Corp Structure of multi-layered dielectric opening and its fabricating method
US6291868B1 (en) * 1998-02-26 2001-09-18 Micron Technology, Inc. Forming a conductive structure in a semiconductor device
WO1999059196A1 (en) * 1998-05-11 1999-11-18 Semitool, Inc. Temperature control system for a thermal reactor
JPH11330468A (ja) * 1998-05-20 1999-11-30 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP3447956B2 (ja) * 1998-05-21 2003-09-16 富士通株式会社 光学的記憶装置
US6100188A (en) * 1998-07-01 2000-08-08 Texas Instruments Incorporated Stable and low resistance metal/barrier/silicon stack structure and related process for manufacturing
US6355580B1 (en) * 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
US6114258A (en) * 1998-10-19 2000-09-05 Applied Materials, Inc. Method of oxidizing a substrate in the presence of nitride and oxynitride films
US6335295B1 (en) * 1999-01-15 2002-01-01 Lsi Logic Corporation Flame-free wet oxidation
US6184091B1 (en) * 1999-02-01 2001-02-06 Infineon Technologies North America Corp. Formation of controlled trench top isolation layers for vertical transistors
US6221791B1 (en) * 1999-06-02 2001-04-24 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and method for oxidizing silicon substrates
NL1013667C2 (nl) * 1999-11-25 2000-12-15 Asm Int Werkwijze en inrichting voor het vormen van een oxidelaag op wafers vervaardigd uit halfgeleidermateriaal.
US6372663B1 (en) * 2000-01-13 2002-04-16 Taiwan Semiconductor Manufacturing Company, Ltd Dual-stage wet oxidation process utilizing varying H2/O2 ratios
US6534401B2 (en) * 2000-04-27 2003-03-18 Applied Materials, Inc. Method for selectively oxidizing a silicon/metal composite film stack
US6458714B1 (en) * 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture
KR100441681B1 (ko) * 2001-03-12 2004-07-27 삼성전자주식회사 금속 게이트 형성 방법
DE10120523A1 (de) * 2001-04-26 2002-10-31 Infineon Technologies Ag Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates
US7115469B1 (en) * 2001-12-17 2006-10-03 Spansion, Llc Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process
US6908784B1 (en) 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
TW200416772A (en) * 2002-06-06 2004-09-01 Asml Us Inc System and method for hydrogen-rich selective oxidation
US6933241B2 (en) 2002-06-06 2005-08-23 Nec Corporation Method for forming pattern of stacked film
DE10236896B4 (de) * 2002-08-12 2010-08-12 Mattson Thermal Products Gmbh Vorrichtung und Verfahren zum thermischen Behandeln von Halbleiterwafern
US6774012B1 (en) * 2002-11-08 2004-08-10 Cypress Semiconductor Corp. Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall
US7229929B2 (en) * 2002-12-06 2007-06-12 Cypress Semiconductor Corporation Multi-layer gate stack
US7189652B1 (en) * 2002-12-06 2007-03-13 Cypress Semiconductor Corporation Selective oxidation of gate stack
US6927169B2 (en) * 2002-12-19 2005-08-09 Applied Materials Inc. Method and apparatus to improve thickness uniformity of surfaces for integrated device manufacturing
US6916744B2 (en) * 2002-12-19 2005-07-12 Applied Materials, Inc. Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile
KR100482738B1 (ko) * 2002-12-30 2005-04-14 주식회사 하이닉스반도체 계면 반응이 억제된 적층 게이트전극 및 그를 구비한반도체 소자의 제조 방법
KR100616498B1 (ko) * 2003-07-26 2006-08-25 주식회사 하이닉스반도체 폴리/텅스텐 게이트 전극을 갖는 반도체 소자의 제조방법
US7235497B2 (en) * 2003-10-17 2007-06-26 Micron Technology, Inc. Selective oxidation methods and transistor fabrication methods
CN100334688C (zh) * 2003-12-27 2007-08-29 上海华虹（集团）有限公司 一种消除栅刻蚀横向凹槽的方法
JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
KR100586009B1 (ko) * 2004-05-31 2006-06-01 삼성전자주식회사 반도체 장치의 제조 방법 및 이를 수행하기 위한 장치
US7521378B2 (en) * 2004-07-01 2009-04-21 Micron Technology, Inc. Low temperature process for polysilazane oxidation/densification
US7326655B2 (en) * 2005-09-29 2008-02-05 Tokyo Electron Limited Method of forming an oxide layer
TWI264797B (en) * 2005-11-07 2006-10-21 Ind Tech Res Inst Self-alignment dual-layer silicon-metal nano-grain memory device, fabricating method thereof and memory containing the same
US7951728B2 (en) * 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
TWI371110B (en) * 2008-09-16 2012-08-21 Nexpower Technology Corp Translucent solar cell and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1174263A (ja) 1997-07-04 1999-03-16 Fuji Electric Co Ltd 炭化けい素半導体装置の熱酸化膜形成方法
US20020177276A1 (en) 2001-05-25 2002-11-28 Chin-Ta Su Method of forming tunnel oxide layer
KR20060042203A (ko) * 2004-02-25 2006-05-12 도쿄 엘렉트론 가부시키가이샤 피처리체의 산화 방법, 산화 장치 및 기억 매체
KR20050094183A (ko) * 2004-03-22 2005-09-27 삼성전자주식회사 화학 기상 증착 장치 및 이를 이용한 산화막 형성 방법

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EP2040287A3 (en) 2012-08-08
US20090081884A1 (en) 2009-03-26
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US8546271B2 (en) 2013-10-01
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