TWI433147B - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
TWI433147B
TWI433147B TW096106821A TW96106821A TWI433147B TW I433147 B TWI433147 B TW I433147B TW 096106821 A TW096106821 A TW 096106821A TW 96106821 A TW96106821 A TW 96106821A TW I433147 B TWI433147 B TW I433147B
Authority
TW
Taiwan
Prior art keywords
bit line
spin
fixed layer
magnetoresistive element
word line
Prior art date
Application number
TW096106821A
Other languages
English (en)
Chinese (zh)
Other versions
TW200807414A (en
Inventor
Takayuki Kawahara
Riichiro Takemura
Kenchi Ito
Hiromasa Takahashi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38821767&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI433147(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of TW200807414A publication Critical patent/TW200807414A/zh
Application granted granted Critical
Publication of TWI433147B publication Critical patent/TWI433147B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW096106821A 2006-05-18 2007-02-27 Semiconductor device TWI433147B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006138429A JP4935183B2 (ja) 2006-05-18 2006-05-18 半導体装置

Publications (2)

Publication Number Publication Date
TW200807414A TW200807414A (en) 2008-02-01
TWI433147B true TWI433147B (zh) 2014-04-01

Family

ID=38821767

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106821A TWI433147B (zh) 2006-05-18 2007-02-27 Semiconductor device

Country Status (5)

Country Link
US (2) US7596014B2 (enExample)
JP (1) JP4935183B2 (enExample)
KR (1) KR101263048B1 (enExample)
CN (2) CN101075628B (enExample)
TW (1) TWI433147B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7646627B2 (en) * 2006-05-18 2010-01-12 Renesas Technology Corp. Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance
JP4250644B2 (ja) 2006-08-21 2009-04-08 株式会社東芝 磁気記憶素子およびこの磁気記憶素子を備えた磁気メモリならびに磁気メモリの駆動方法
JP5096886B2 (ja) * 2007-11-20 2012-12-12 シャープ株式会社 不揮発性半導体記憶装置及びその駆動方法
JP5224803B2 (ja) 2007-12-26 2013-07-03 株式会社日立製作所 磁気メモリ及び磁気メモリの書き込み方法
JP2009211733A (ja) * 2008-02-29 2009-09-17 Toshiba Corp 磁気記憶装置
JP2009230798A (ja) * 2008-03-21 2009-10-08 Toshiba Corp 磁気記憶装置
TWI451410B (zh) * 2008-04-18 2014-09-01 Sony Corp Recording method of magnetic memory element
KR101493868B1 (ko) * 2008-07-10 2015-02-17 삼성전자주식회사 자기 메모리 소자의 구동 방법
JP4738462B2 (ja) 2008-09-25 2011-08-03 株式会社東芝 磁気ランダムアクセスメモリ
US7859891B2 (en) * 2008-09-30 2010-12-28 Seagate Technology Llc Static source plane in stram
US7876603B2 (en) * 2008-09-30 2011-01-25 Micron Technology, Inc. Spin current generator for STT-MRAM or other spintronics applications
JP4970407B2 (ja) * 2008-11-10 2012-07-04 株式会社東芝 磁気記憶素子およびこの磁気記憶素子を備えた磁気メモリならびに磁気メモリの駆動方法
US8027206B2 (en) * 2009-01-30 2011-09-27 Qualcomm Incorporated Bit line voltage control in spin transfer torque magnetoresistive random access memory
JP4649519B2 (ja) 2009-03-13 2011-03-09 株式会社東芝 磁気ディスク装置及び磁気ヘッド駆動制御方法
US7957183B2 (en) * 2009-05-04 2011-06-07 Magic Technologies, Inc. Single bit line SMT MRAM array architecture and the programming method
US8427864B2 (en) * 2009-06-03 2013-04-23 Hitachi, Ltd. Semiconductor storage device
JP2011034637A (ja) * 2009-08-03 2011-02-17 Toshiba Corp 不揮発性半導体記憶装置
US8385106B2 (en) * 2009-09-11 2013-02-26 Grandis, Inc. Method and system for providing a hierarchical data path for spin transfer torque random access memory
JP4818426B2 (ja) 2009-11-27 2011-11-16 株式会社東芝 ヘッド駆動制御装置、磁気ディスク装置及びヘッド駆動制御方法
JP5363644B2 (ja) * 2010-02-16 2013-12-11 株式会社日立製作所 半導体装置
US8411497B2 (en) * 2010-05-05 2013-04-02 Grandis, Inc. Method and system for providing a magnetic field aligned spin transfer torque random access memory
US8437181B2 (en) * 2010-06-29 2013-05-07 Magic Technologies, Inc. Shared bit line SMT MRAM array with shunting transistors between the bit lines
KR20120010052A (ko) * 2010-07-23 2012-02-02 삼성전자주식회사 이퀄라이징 기능을 갖는 저항성 메모리 및 이를 포함하는 3차원 반도체 장치
US8929132B2 (en) * 2011-11-17 2015-01-06 Everspin Technologies, Inc. Write driver circuit and method for writing to a spin-torque MRAM
WO2013171947A1 (ja) * 2012-05-16 2013-11-21 ソニー株式会社 記憶装置、記憶素子
JP5916524B2 (ja) * 2012-06-07 2016-05-11 ルネサスエレクトロニクス株式会社 半導体装置
JP6137180B2 (ja) * 2012-06-26 2017-05-31 日本電気株式会社 プログラミング回路、半導体装置及びプログラミング方法
JP6143936B2 (ja) * 2013-03-15 2017-06-07 インテル・コーポレーション 集積コンデンサベースの電力分散
US10068628B2 (en) 2013-06-28 2018-09-04 Intel Corporation Apparatus for low power write and read operations for resistive memory
KR20170090293A (ko) 2016-01-28 2017-08-07 삼성전자주식회사 분리 소스라인 구조를 갖는 메모리 장치
US10109331B2 (en) 2016-03-01 2018-10-23 Toshiba Memory Corporation Magnetic storage device with a wiring having a ferromagnetic layer
JP6625942B2 (ja) * 2016-07-29 2019-12-25 株式会社東芝 半導体記憶装置
TWI785299B (zh) 2016-09-09 2022-12-01 日商鎧俠股份有限公司 記憶裝置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299584A (ja) * 2001-04-03 2002-10-11 Mitsubishi Electric Corp 磁気ランダムアクセスメモリ装置および半導体装置
JP3970571B2 (ja) * 2001-10-10 2007-09-05 独立行政法人科学技術振興機構 磁気記憶素子の書き込み回路
JP4219134B2 (ja) * 2002-09-03 2009-02-04 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
JP2005116923A (ja) 2003-10-10 2005-04-28 Hitachi Ltd スピントルクを用いた不揮発性磁気メモリセルおよびこれを用いた磁気ランダムアクセスメモリ
US7224601B2 (en) * 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
JP2007081280A (ja) * 2005-09-16 2007-03-29 Fujitsu Ltd 磁気抵抗効果素子及び磁気メモリ装置
JP4999359B2 (ja) * 2005-10-13 2012-08-15 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
US7286395B2 (en) * 2005-10-27 2007-10-23 Grandis, Inc. Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
JP5193419B2 (ja) * 2005-10-28 2013-05-08 株式会社東芝 スピン注入磁気ランダムアクセスメモリとその書き込み方法
US7430135B2 (en) * 2005-12-23 2008-09-30 Grandis Inc. Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density

Also Published As

Publication number Publication date
CN101425328B (zh) 2011-11-30
CN101425328A (zh) 2009-05-06
JP4935183B2 (ja) 2012-05-23
JP2007310949A (ja) 2007-11-29
US20070285975A1 (en) 2007-12-13
CN101075628A (zh) 2007-11-21
US7596014B2 (en) 2009-09-29
TW200807414A (en) 2008-02-01
US7778068B2 (en) 2010-08-17
KR101263048B1 (ko) 2013-05-14
CN101075628B (zh) 2014-01-08
KR20070111958A (ko) 2007-11-22
US20090310399A1 (en) 2009-12-17

Similar Documents

Publication Publication Date Title
TWI433147B (zh) Semiconductor device
TWI445000B (zh) Semiconductor device
JP4133149B2 (ja) 半導体記憶装置
US8315090B2 (en) Pseudo page mode memory architecture and method
US6970378B2 (en) Thin-film magnetic memory device executing data writing with data write magnetic fields in two directions
US9171618B2 (en) Semiconductor integrated circuit and processor
JP6421399B2 (ja) Ｓｔｔ−ｍｒａｍを使用した半導体記憶装置
KR100572744B1 (ko) 레퍼런스셀 없이 데이터 판독을 실행하는 박막 자성체기억장치
JP2004103104A (ja) 薄膜磁性体記憶装置
US9754664B2 (en) Semiconductor memory
JP2005032304A (ja) 半導体記憶装置
US6788571B2 (en) Thin film magnetic memory device having an access element shared by a plurality of memory cells
US8077508B1 (en) Dynamic multistate memory write driver
US9773538B2 (en) Nonvolatile semiconductor memory
CN102446539B (zh) 伪页面模式存储器架构和方法
JP2004185752A (ja) 薄膜磁性体記憶装置
JP5500289B2 (ja) 半導体装置
JP5293795B2 (ja) 半導体装置
JP2017037691A (ja) 不揮発性半導体メモリ
JP2007122838A (ja) 半導体記憶装置