CN101075628B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101075628B
CN101075628B CN200710084807.8A CN200710084807A CN101075628B CN 101075628 B CN101075628 B CN 101075628B CN 200710084807 A CN200710084807 A CN 200710084807A CN 101075628 B CN101075628 B CN 101075628B
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CN
China
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mentioned
layer
current
bit line
free layer
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Expired - Fee Related
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CN200710084807.8A
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English (en)
Chinese (zh)
Other versions
CN101075628A (zh
Inventor
河原尊之
竹村理一郎
伊藤显知
高桥宏昌
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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN101075628A publication Critical patent/CN101075628A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN200710084807.8A 2006-05-18 2007-02-27 半导体器件 Expired - Fee Related CN101075628B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP138429/2006 2006-05-18
JP2006138429A JP4935183B2 (ja) 2006-05-18 2006-05-18 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2008101838307A Division CN101425328B (zh) 2006-05-18 2007-02-27 半导体器件

Publications (2)

Publication Number Publication Date
CN101075628A CN101075628A (zh) 2007-11-21
CN101075628B true CN101075628B (zh) 2014-01-08

Family

ID=38821767

Family Applications (2)

Application Number Title Priority Date Filing Date
CN200710084807.8A Expired - Fee Related CN101075628B (zh) 2006-05-18 2007-02-27 半导体器件
CN2008101838307A Expired - Fee Related CN101425328B (zh) 2006-05-18 2007-02-27 半导体器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2008101838307A Expired - Fee Related CN101425328B (zh) 2006-05-18 2007-02-27 半导体器件

Country Status (5)

Country Link
US (2) US7596014B2 (enExample)
JP (1) JP4935183B2 (enExample)
KR (1) KR101263048B1 (enExample)
CN (2) CN101075628B (enExample)
TW (1) TWI433147B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7646627B2 (en) * 2006-05-18 2010-01-12 Renesas Technology Corp. Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance
JP4250644B2 (ja) 2006-08-21 2009-04-08 株式会社東芝 磁気記憶素子およびこの磁気記憶素子を備えた磁気メモリならびに磁気メモリの駆動方法
JP5096886B2 (ja) * 2007-11-20 2012-12-12 シャープ株式会社 不揮発性半導体記憶装置及びその駆動方法
JP5224803B2 (ja) 2007-12-26 2013-07-03 株式会社日立製作所 磁気メモリ及び磁気メモリの書き込み方法
JP2009211733A (ja) * 2008-02-29 2009-09-17 Toshiba Corp 磁気記憶装置
JP2009230798A (ja) * 2008-03-21 2009-10-08 Toshiba Corp 磁気記憶装置
TWI451410B (zh) * 2008-04-18 2014-09-01 Sony Corp Recording method of magnetic memory element
KR101493868B1 (ko) * 2008-07-10 2015-02-17 삼성전자주식회사 자기 메모리 소자의 구동 방법
JP4738462B2 (ja) 2008-09-25 2011-08-03 株式会社東芝 磁気ランダムアクセスメモリ
US7859891B2 (en) * 2008-09-30 2010-12-28 Seagate Technology Llc Static source plane in stram
US7876603B2 (en) * 2008-09-30 2011-01-25 Micron Technology, Inc. Spin current generator for STT-MRAM or other spintronics applications
JP4970407B2 (ja) * 2008-11-10 2012-07-04 株式会社東芝 磁気記憶素子およびこの磁気記憶素子を備えた磁気メモリならびに磁気メモリの駆動方法
US8027206B2 (en) * 2009-01-30 2011-09-27 Qualcomm Incorporated Bit line voltage control in spin transfer torque magnetoresistive random access memory
JP4649519B2 (ja) 2009-03-13 2011-03-09 株式会社東芝 磁気ディスク装置及び磁気ヘッド駆動制御方法
US7957183B2 (en) * 2009-05-04 2011-06-07 Magic Technologies, Inc. Single bit line SMT MRAM array architecture and the programming method
US8427864B2 (en) * 2009-06-03 2013-04-23 Hitachi, Ltd. Semiconductor storage device
JP2011034637A (ja) * 2009-08-03 2011-02-17 Toshiba Corp 不揮発性半導体記憶装置
US8385106B2 (en) * 2009-09-11 2013-02-26 Grandis, Inc. Method and system for providing a hierarchical data path for spin transfer torque random access memory
JP4818426B2 (ja) 2009-11-27 2011-11-16 株式会社東芝 ヘッド駆動制御装置、磁気ディスク装置及びヘッド駆動制御方法
JP5363644B2 (ja) * 2010-02-16 2013-12-11 株式会社日立製作所 半導体装置
US8411497B2 (en) * 2010-05-05 2013-04-02 Grandis, Inc. Method and system for providing a magnetic field aligned spin transfer torque random access memory
US8437181B2 (en) * 2010-06-29 2013-05-07 Magic Technologies, Inc. Shared bit line SMT MRAM array with shunting transistors between the bit lines
KR20120010052A (ko) * 2010-07-23 2012-02-02 삼성전자주식회사 이퀄라이징 기능을 갖는 저항성 메모리 및 이를 포함하는 3차원 반도체 장치
US8929132B2 (en) * 2011-11-17 2015-01-06 Everspin Technologies, Inc. Write driver circuit and method for writing to a spin-torque MRAM
WO2013171947A1 (ja) * 2012-05-16 2013-11-21 ソニー株式会社 記憶装置、記憶素子
JP5916524B2 (ja) * 2012-06-07 2016-05-11 ルネサスエレクトロニクス株式会社 半導体装置
JP6137180B2 (ja) * 2012-06-26 2017-05-31 日本電気株式会社 プログラミング回路、半導体装置及びプログラミング方法
JP6143936B2 (ja) * 2013-03-15 2017-06-07 インテル・コーポレーション 集積コンデンサベースの電力分散
US10068628B2 (en) 2013-06-28 2018-09-04 Intel Corporation Apparatus for low power write and read operations for resistive memory
KR20170090293A (ko) 2016-01-28 2017-08-07 삼성전자주식회사 분리 소스라인 구조를 갖는 메모리 장치
US10109331B2 (en) 2016-03-01 2018-10-23 Toshiba Memory Corporation Magnetic storage device with a wiring having a ferromagnetic layer
JP6625942B2 (ja) * 2016-07-29 2019-12-25 株式会社東芝 半導体記憶装置
TWI785299B (zh) 2016-09-09 2022-12-01 日商鎧俠股份有限公司 記憶裝置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299584A (ja) * 2001-04-03 2002-10-11 Mitsubishi Electric Corp 磁気ランダムアクセスメモリ装置および半導体装置
JP3970571B2 (ja) * 2001-10-10 2007-09-05 独立行政法人科学技術振興機構 磁気記憶素子の書き込み回路
JP4219134B2 (ja) * 2002-09-03 2009-02-04 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
JP2005116923A (ja) 2003-10-10 2005-04-28 Hitachi Ltd スピントルクを用いた不揮発性磁気メモリセルおよびこれを用いた磁気ランダムアクセスメモリ
US7224601B2 (en) * 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
JP2007081280A (ja) * 2005-09-16 2007-03-29 Fujitsu Ltd 磁気抵抗効果素子及び磁気メモリ装置
JP4999359B2 (ja) * 2005-10-13 2012-08-15 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
US7286395B2 (en) * 2005-10-27 2007-10-23 Grandis, Inc. Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
JP5193419B2 (ja) * 2005-10-28 2013-05-08 株式会社東芝 スピン注入磁気ランダムアクセスメモリとその書き込み方法
US7430135B2 (en) * 2005-12-23 2008-09-30 Grandis Inc. Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density

Also Published As

Publication number Publication date
CN101425328B (zh) 2011-11-30
CN101425328A (zh) 2009-05-06
TWI433147B (zh) 2014-04-01
JP4935183B2 (ja) 2012-05-23
JP2007310949A (ja) 2007-11-29
US20070285975A1 (en) 2007-12-13
CN101075628A (zh) 2007-11-21
US7596014B2 (en) 2009-09-29
TW200807414A (en) 2008-02-01
US7778068B2 (en) 2010-08-17
KR101263048B1 (ko) 2013-05-14
KR20070111958A (ko) 2007-11-22
US20090310399A1 (en) 2009-12-17

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Granted publication date: 20140108

Termination date: 20170227

CF01 Termination of patent right due to non-payment of annual fee