KR101263048B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101263048B1
KR101263048B1 KR1020070017550A KR20070017550A KR101263048B1 KR 101263048 B1 KR101263048 B1 KR 101263048B1 KR 1020070017550 A KR1020070017550 A KR 1020070017550A KR 20070017550 A KR20070017550 A KR 20070017550A KR 101263048 B1 KR101263048 B1 KR 101263048B1
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KR
South Korea
Prior art keywords
bit line
current
tunnel
magnetoresistive element
free layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020070017550A
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English (en)
Korean (ko)
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KR20070111958A (ko
Inventor
다까유끼 가와하라
리이찌로 다께무라
겐찌 이또
히로마사 다까하시
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38821767&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101263048(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 가부시키가이샤 히타치세이사쿠쇼 filed Critical 가부시키가이샤 히타치세이사쿠쇼
Publication of KR20070111958A publication Critical patent/KR20070111958A/ko
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Publication of KR101263048B1 publication Critical patent/KR101263048B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020070017550A 2006-05-18 2007-02-21 반도체 장치 Expired - Fee Related KR101263048B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00138429 2006-05-18
JP2006138429A JP4935183B2 (ja) 2006-05-18 2006-05-18 半導体装置

Publications (2)

Publication Number Publication Date
KR20070111958A KR20070111958A (ko) 2007-11-22
KR101263048B1 true KR101263048B1 (ko) 2013-05-14

Family

ID=38821767

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070017550A Expired - Fee Related KR101263048B1 (ko) 2006-05-18 2007-02-21 반도체 장치

Country Status (5)

Country Link
US (2) US7596014B2 (enExample)
JP (1) JP4935183B2 (enExample)
KR (1) KR101263048B1 (enExample)
CN (2) CN101075628B (enExample)
TW (1) TWI433147B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7646627B2 (en) * 2006-05-18 2010-01-12 Renesas Technology Corp. Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance
JP4250644B2 (ja) 2006-08-21 2009-04-08 株式会社東芝 磁気記憶素子およびこの磁気記憶素子を備えた磁気メモリならびに磁気メモリの駆動方法
JP5096886B2 (ja) * 2007-11-20 2012-12-12 シャープ株式会社 不揮発性半導体記憶装置及びその駆動方法
JP5224803B2 (ja) 2007-12-26 2013-07-03 株式会社日立製作所 磁気メモリ及び磁気メモリの書き込み方法
JP2009211733A (ja) * 2008-02-29 2009-09-17 Toshiba Corp 磁気記憶装置
JP2009230798A (ja) * 2008-03-21 2009-10-08 Toshiba Corp 磁気記憶装置
TWI451410B (zh) * 2008-04-18 2014-09-01 Sony Corp Recording method of magnetic memory element
KR101493868B1 (ko) * 2008-07-10 2015-02-17 삼성전자주식회사 자기 메모리 소자의 구동 방법
JP4738462B2 (ja) 2008-09-25 2011-08-03 株式会社東芝 磁気ランダムアクセスメモリ
US7876603B2 (en) * 2008-09-30 2011-01-25 Micron Technology, Inc. Spin current generator for STT-MRAM or other spintronics applications
US7859891B2 (en) * 2008-09-30 2010-12-28 Seagate Technology Llc Static source plane in stram
JP4970407B2 (ja) * 2008-11-10 2012-07-04 株式会社東芝 磁気記憶素子およびこの磁気記憶素子を備えた磁気メモリならびに磁気メモリの駆動方法
US8027206B2 (en) * 2009-01-30 2011-09-27 Qualcomm Incorporated Bit line voltage control in spin transfer torque magnetoresistive random access memory
JP4649519B2 (ja) 2009-03-13 2011-03-09 株式会社東芝 磁気ディスク装置及び磁気ヘッド駆動制御方法
US7957183B2 (en) * 2009-05-04 2011-06-07 Magic Technologies, Inc. Single bit line SMT MRAM array architecture and the programming method
WO2010140615A1 (ja) * 2009-06-03 2010-12-09 株式会社日立製作所 半導体記憶装置
JP2011034637A (ja) * 2009-08-03 2011-02-17 Toshiba Corp 不揮発性半導体記憶装置
US8385106B2 (en) * 2009-09-11 2013-02-26 Grandis, Inc. Method and system for providing a hierarchical data path for spin transfer torque random access memory
JP4818426B2 (ja) 2009-11-27 2011-11-16 株式会社東芝 ヘッド駆動制御装置、磁気ディスク装置及びヘッド駆動制御方法
WO2011101947A1 (ja) * 2010-02-16 2011-08-25 株式会社日立製作所 半導体装置
US8411497B2 (en) * 2010-05-05 2013-04-02 Grandis, Inc. Method and system for providing a magnetic field aligned spin transfer torque random access memory
US8437181B2 (en) * 2010-06-29 2013-05-07 Magic Technologies, Inc. Shared bit line SMT MRAM array with shunting transistors between the bit lines
KR20120010052A (ko) * 2010-07-23 2012-02-02 삼성전자주식회사 이퀄라이징 기능을 갖는 저항성 메모리 및 이를 포함하는 3차원 반도체 장치
US8929132B2 (en) * 2011-11-17 2015-01-06 Everspin Technologies, Inc. Write driver circuit and method for writing to a spin-torque MRAM
CN104285291B (zh) * 2012-05-16 2017-06-20 索尼公司 存储设备和存储器件
JP5916524B2 (ja) * 2012-06-07 2016-05-11 ルネサスエレクトロニクス株式会社 半導体装置
JP6137180B2 (ja) * 2012-06-26 2017-05-31 日本電気株式会社 プログラミング回路、半導体装置及びプログラミング方法
US9305629B2 (en) * 2013-03-15 2016-04-05 Intel Corporation Integrated capacitor based power distribution
DE112013007054T5 (de) 2013-06-28 2016-03-17 Intel Corporation Vorrichtung für Schreib- und Lese-Vorgänge mit geringem Energieverbrauch für einen resistiven Speicher
KR20170090293A (ko) 2016-01-28 2017-08-07 삼성전자주식회사 분리 소스라인 구조를 갖는 메모리 장치
US10109331B2 (en) 2016-03-01 2018-10-23 Toshiba Memory Corporation Magnetic storage device with a wiring having a ferromagnetic layer
JP6625942B2 (ja) * 2016-07-29 2019-12-25 株式会社東芝 半導体記憶装置
TWI684979B (zh) 2016-09-09 2020-02-11 東芝記憶體股份有限公司 記憶裝置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299584A (ja) * 2001-04-03 2002-10-11 Mitsubishi Electric Corp 磁気ランダムアクセスメモリ装置および半導体装置
JP3970571B2 (ja) * 2001-10-10 2007-09-05 独立行政法人科学技術振興機構 磁気記憶素子の書き込み回路
JP4219134B2 (ja) * 2002-09-03 2009-02-04 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
JP2005116923A (ja) 2003-10-10 2005-04-28 Hitachi Ltd スピントルクを用いた不揮発性磁気メモリセルおよびこれを用いた磁気ランダムアクセスメモリ
US7224601B2 (en) * 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
JP2007081280A (ja) * 2005-09-16 2007-03-29 Fujitsu Ltd 磁気抵抗効果素子及び磁気メモリ装置
JP4999359B2 (ja) * 2005-10-13 2012-08-15 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
US7286395B2 (en) * 2005-10-27 2007-10-23 Grandis, Inc. Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
JP5193419B2 (ja) * 2005-10-28 2013-05-08 株式会社東芝 スピン注入磁気ランダムアクセスメモリとその書き込み方法
US7430135B2 (en) * 2005-12-23 2008-09-30 Grandis Inc. Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density

Also Published As

Publication number Publication date
TWI433147B (zh) 2014-04-01
CN101425328B (zh) 2011-11-30
US7596014B2 (en) 2009-09-29
CN101075628A (zh) 2007-11-21
KR20070111958A (ko) 2007-11-22
US20090310399A1 (en) 2009-12-17
JP4935183B2 (ja) 2012-05-23
CN101425328A (zh) 2009-05-06
JP2007310949A (ja) 2007-11-29
US7778068B2 (en) 2010-08-17
CN101075628B (zh) 2014-01-08
US20070285975A1 (en) 2007-12-13
TW200807414A (en) 2008-02-01

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