TWI428972B - 半導體封裝製程 - Google Patents

半導體封裝製程 Download PDF

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TWI428972B
TWI428972B TW099130144A TW99130144A TWI428972B TW I428972 B TWI428972 B TW I428972B TW 099130144 A TW099130144 A TW 099130144A TW 99130144 A TW99130144 A TW 99130144A TW I428972 B TWI428972 B TW I428972B
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wafer
protective layer
thinned
semiconductor package
semiconductor
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TW201110222A (en
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Wen Chih Chiou
Weng Jin Wu
Shau Lin Shue
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Taiwan Semiconductor Mfg
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Description

半導體封裝製程
本發明係有關於半導體裝置的製作，且特別是有關於一種三維(3D)積體電路(ICs)的製作。
由於各種電子元件(亦即電晶體、二極體、電阻器、電容等)的積極度的持續改良，半導體工業已經歷持續快速的成長。大部分而言，積極度的改良來自不斷縮減最小線寬，而使既定區域中可整合更多元件。三維積體電路可以解決當裝置數量增加時，裝置間內連線的數量與長度的限制。形成三維積體電路的一種方法是晶粒-對-晶圓堆疊接合，其晶圓上接合一個或多個晶粒，且晶粒的尺寸可小於晶圓上的晶片尺寸。為了減少半導體封裝體的厚度、增加晶片速率及用於高密度製造，目前正努力減少半導體晶圓厚度。厚度的減少可藉由晶背研磨達成，晶背研磨是施行在形成電路圖案的相反面，而具有電路圖案的表面通常是以黏著材料貼附至一載板用為支撐。因為薄化晶圓強度不足，容易受如彎曲及/或歪曲(warp)的影響而形變，因在以切割製程個別的晶片封裝體之前，需以成型化合物(如熱固環氧樹脂(thermo-curing epoxy resin))封裝晶圓的表面。然而，在晶圓邊緣附近露出的黏著材料，很容易受到蝕刻攻擊，在暫時性載板接合及去接合(temporary carrier bonding and de-bonding)中會造成問題。傳統在黏著材料的邊緣提供邊緣密封層，但接下來的晶圓薄化製程將暴露出鄰近晶圓邊緣的黏著材料的另一部分。
一種半導體封裝製程，包括：提供一晶圓，該晶圓具有相對之第一表面及第二表面；利用一黏著層將該晶圓之第一表面貼附至一載板而暴露出鄰近該晶圓一邊緣之部分該黏著層；自該第二表面薄化該晶圓，以形成一薄化晶圓；形成一保護層以覆蓋該黏著層的該暴露部分；接合多個晶粒在該薄化晶圓上；以及利用一成型化合物封裝該薄化晶圓及該多個晶粒。如前述之半導體封裝製程，其中該晶圓包括：一半導體基板，具有一正面及一背面；一穿孔，填充有一導電材料，其至少通過一部分該半導體基板；以及一積體電路，形成在該半導體基板的正面上。
一種半導體封裝製程，包括：提供一晶圓，具有相對之第一表面及第二表面；利用一黏著層將該晶圓之第一表面貼附至一載板而暴露出鄰近該晶圓一邊緣之部分該黏著層；自該第二表面薄化該晶圓，以形成一薄化晶圓；形成一保護層以覆蓋該黏著層的該暴露部分以及該晶圓的該邊緣；在該薄化晶圓上接合一晶粒；利用一成型化合物封裝該薄化晶圓及該晶粒；以及移除該載板。如前述之半導體封裝製程，其中該晶圓包括：一半導體基板，具有一正面及一背面；一穿孔，以一導電材料填入，其至少通過一部分該半導體基板；以及一積體電路，在該半導體基板的該正面上形成。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
在本說明書中關於”一實施例”的描述係指該實施例所敘述之特定的物件、結構或特性被包含在至少一實施例中。因此，本說明書中多處的”在一實施例中”不必然為相同實施例。再者，在一或多個實施例中於適當條件下，可為特定的物件、結構或特性的組合。應注意以下圖式並非依比例繪製，而僅為說明使用。
在此第1A至1F圖為一系列剖面圖，用以說明形成具有在晶圓邊緣之黏著材料之保護層的晶粒-對-晶圓堆疊的實施例。
第1A圖為藉由黏著層14在載板12貼附上晶圓10的一實施例的剖面圖。提供具有多個半導體晶片在其上的晶圓10，該晶圓10包含半導體基板如矽、砷化鎵、水晶晶圓、石墨、玻璃、石英、陶瓷、熱固材料等。晶圓10具有第一表面10a及與第一表面10a相對的第二表面10b。在第一表面10a上形成包括主動及被動裝置之積體電路如電晶體、電阻器、電容等，以與接合墊(bond pad)及/或其他內連線結構接觸。在第一表面10a上形成黏著層14，而後將載板12接合至黏著層14上以便在後續製程處理晶圓10時可更佳容易。在此同時，載板12可替代地或額外地配置上對應的黏著表面。載板12是以可移除或可溶材料構成如玻璃、金屬、陶瓷、聚合物、矽等。
在一實施例中，晶圓10包括多個用於三維應用的矽通孔(through silicon vias,TSVs)。如第2A圖所示，晶圓10包含具有正面11a及背面11b的半導體基板11，其中在正面11a上形成積體電路及內連線結構，而多個穿孔(through vias)40至少部分穿過半導體基板11。穿孔40係由正面11a延伸至背面11b且具有所需深度的金屬填充插塞。穿孔40可與在內連結構上形成的接合墊電性連接。穿孔40的製作是在”第一階內連線(first-level interconnection)”之前進行，其係指在接觸結構(contact structure)及電晶體上的金屬間介電層(inter-metal dielectrics layer,IMD layer)中圖案化的最底層金屬。此外亦可在製造內連線結構之後執行金屬填入孔洞的製程(metal-filled via process)。
第1B圖為進行晶圓薄化製程(wafer thinning process)的晶圓剖面圖。在接上載板12後，依半導體封裝體的使用目的可在晶圓10無結構(structure-free)區域(第二表面10b)中加工以得到所需的最後厚度，其可藉磨光(grinding)、蝕刻及/或研磨(polishing)製得預定厚度之薄化晶圓10”。在一實施例中，晶圓10薄化至厚度約5μm至50μm。在另一實施例中，晶圓10薄化至厚度約25μm至250μm。在提供包含穿孔40之晶圓10的實施例中，經過如第2B圖所示的晶圓薄化製程後，穿孔40的一端40a自薄化基板11”的背面11b”露出及/或突出。
為了避免在後續蝕刻製程中破壞薄化晶圓10”的邊緣10e及黏著層14的暴露部分14p，形成保護層18以至少覆蓋邊緣10e及暴露部分14p。保護層18也可延伸覆蓋部分的載板12如載板12的邊緣12e。因此在後續蝕刻製程中可藉由保護層18保護其下的黏著層14。如第1C圖所示在一實施例中，提供保護層18以覆蓋薄化晶圓10”的第二表面10b”及黏著層14的暴露部分14p，且其可延伸覆蓋住載板12的邊緣12e。保護層18的材料可為介電材料如氧化膜、氮化膜、碳化膜、以聚合物為主的材料、聚醯亞胺、環氧樹脂、旋塗式玻璃(SOG)、旋塗(spin-on)材料或前述之組合，利用化學氣相沉積(CVD)、物理氣相沉積(PVD)、旋轉式塗佈法(spin-on coating)、射出、印刷或其他未來發展的沉積製程形成。在提供穿孔40之晶圓10的實施例中，保護層18是形成在薄化基板11”的背面11b”，如第2B圖所示，其可在後續製程中部分移除。第2B圖為繪示在背面11b”的保護層18，而在形成保護層18之前，可在背面11b”上執行任何其他的製程。
第1D及1E圖為在薄化晶圓10”上接合多個晶粒20而形成晶粒-對-晶圓堆疊的剖面圖。在薄化晶圓10”的表面10b”上，形成包括電性連接(electrical connections)及/或其他結構(所指為導電結構44)的背側金屬化層，而後在薄化晶圓10”上接合晶粒20，其中其連接方法包括一般常用的方法如氧化物-對-氧化物接合、氧化物-對-矽接合、銅-對-銅接合、黏著接合或其他金屬如銲錫接合等。在背側金屬化製程中可移除部份保護層18以暴露出用於外部接點(external contact)的導電區域。晶粒20可包含記憶體晶片、無線電射頻(RF)晶片、邏輯晶片等。各晶粒含有第一表面及第二表面，而在第一表面上形成積體電路。在一實施例中，在晶粒20的第一表面接合上薄化晶圓10”。在一實施例中，在晶粒20的第二表面接合上薄化晶圓10”。在提供包含穿孔40之晶圓10的實施例中，如第2C圖所示，在穿孔40的一端40a上形成導電結構44如焊料凸塊或銅凸塊以接合晶粒20的第二表面或第一表面。導電結構44也包括重分佈層(redistribution layers,RDLs)及接合墊，在形成焊料凸塊或銅凸塊之前，可在薄化晶圓10”的表面10b”上形成接合墊。在背面金屬化製程中，可部分移除保護層18，例如由穿孔40的一端40a移除。在一實施例中，保護層18仍在薄化基板11”的背面11b”上。
第1F圖為在晶粒-到-晶圓堆疊上進行成型製程的剖面圖。在晶粒-到-晶圓堆疊上覆蓋成型化合物22並填入相鄰晶粒20間的剩餘空間，但可不覆蓋薄化晶圓10”的邊緣區域。成型化合物22可為可固化材料如聚合物為主的材料、樹脂為主的材料、聚醯亞胺、氧化矽、環氧樹脂、苯並環丁烯(benzocyclobutenes,BCB)、SilkTM (Dow Chemical)或前述之組合。成型製程包括射出成型、壓縮成型、模板印刷(stencil printing)、旋塗覆蓋或其他未來發展的沉積製程。在覆蓋成型化合物22之後，進行固化或烘烤步驟固化保護材料。
一般在晶圓級(wafer-level)測試完成後，會在成型化合物頂部疊上膠帶，而後將晶粒-到-晶圓堆疊從載板12分離以暴露薄化晶圓10”的第一表面10a。分離製程是藉由如利用溶劑、利用紫外光照射或剝除(pulled off)。再者，在薄化晶圓10”的第一表面10a上，形成各半導體晶片的外部接觸(亦即焊料凸塊、包含銅的凸塊或其組合)以與電性終端接合，接著按一般方式沿著分割線切割封裝後的晶粒-到-晶圓堆疊以形成個別的半導體封裝體。在切割之後，透過如異方性導電膜(anisotropically conductive connection film)在IC卡上安裝堆疊的一或多個晶片。
第3A至3B圖的剖面圖說明在晶粒-到-晶圓堆疊形成黏著材料之保護層的實施例。與在第1A至1F圖及第2A至2C圖相同或類似的敘述在此省略。藉黏著層14在載板12上貼附上晶圓10，而後晶圓10進行薄化製程至所需的最終厚度。為了避免在後續蝕刻製程中破壞黏著層14的暴露部分14p，如第3B圖所示，在晶圓薄化製程後，形成保護層18以覆蓋鄰近晶圓邊緣10e的黏著層14之暴露部分14p。保護層18也可延伸覆蓋薄化晶圓10”的邊緣10e，但沒有覆蓋整個暴露表面10b”。保護層18可更進一步的延伸覆蓋載板12的邊緣12e。在後續蝕刻製程中可藉由保護層18保護暴露部分14p，而不露出黏著層14。而後，在薄化晶圓10”的表面10b”上，形成包含電性連接及/或其他結構的背側金屬化層，而後在薄化晶圓10”接合上晶粒20。接下來，如第3B圖所示，在晶粒-到-晶圓堆疊上覆蓋成型化合物22且填入相鄰晶粒20間的剩餘空間。
雖然本發明已以數個較佳實施例揭露於上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10．．．晶圓
10a．．．晶圓10的第一表面
10b．．．晶圓10的第二表面
12．．．載板
14．．．黏著層
11．．．半導體基板
22．．．成型化合物
40．．．穿孔
40a．．．穿孔40的一端
10”．．．薄化晶圓
11”．．．薄化基板
18．．．保護層
12e．．．載板12的邊緣
20．．．晶粒
44．．．導電結構
10b”．．．薄化晶圓10”的第二表面
11b”．．．薄化基板的背面
10e．．．薄化晶圓10”的邊緣
14p．．．黏著層14的暴露部分
11a．．．半導體基板11的正面
11b．．．半導體基板11的背面
第1A~1F圖為一系列剖面圖，用以說明在晶圓邊緣形成黏著材料的保護層的一實施例。
第2A~2C圖為一系列剖面圖，用以說明處理包含穿孔(through vias)之晶圓的方法的一實施例。
第3A~3B圖為一系列剖面圖，用以說明在晶圓邊緣形成黏著材料的保護層的另一實施例。
10．．．晶圓
20．．．晶粒
44．．．導電結構
18．．．保護層
40．．．穿孔
40a．．．穿孔40的一端
11”．．．薄化基板

Claims (10)

  1. 一種半導體封裝製程，包括：提供一晶圓，該晶圓具有相對之第一表面及第二表面；利用一黏著層將該晶圓之第一表面貼附至一載板而暴露出鄰近該晶圓一邊緣之部分該黏著層；自該第二表面薄化該晶圓，以形成一薄化晶圓；形成一保護層以覆蓋該黏著層的該暴露部分；接合多個晶粒在該薄化晶圓上；以及利用一成型化合物封裝該薄化晶圓及該多個晶粒。
  2. 如申請專利範圍第1項所述之半導體封裝製程，其中該保護層覆蓋該晶圓邊緣。
  3. 如申請專利範圍第1項所述之半導體封裝製程，其中該保護層覆蓋鄰近該晶圓邊緣的部分載板。
  4. 如申請專利範圍第1項所述之半導體封裝製程，其中該保護層覆蓋至少一部分該晶圓的第二表面。
  5. 如申請專利範圍第1項所述之半導體封裝製程，其中該保護層包括氧化膜、氮化膜、碳化膜、乾膜、旋塗材料膜或前述之組合。
  6. 如申請專利範圍第1項所述之半導體封裝製程，其中該晶圓包括：一半導體基板，具有一正面及一背面；一穿孔，填充有一導電材料，其至少通過一部分該半導體基板；以及一積體電路，形成在該半導體基板的正面上。
  7. 如申請專利範圍第6項所述之半導體封裝製程，其中該晶圓進行薄化後，該半導體基板的背面上暴露出該穿孔的一端。
  8. 如申請專利範圍第6項所述之半導體封裝製程，其中該晶圓進行薄化後，在該半導體基板的背面上形成該保護層。
  9. 如申請專利範圍第7項所述之半導體封裝製程，更包括在該薄化晶圓上接合該多個晶粒之前，在該穿孔的該暴露端形成一導電結構。
  10. 如申請專利範圍第9項所述之半導體封裝製程，其中該導電結構包括一重分佈層(redistribution layer,RDL)。
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US8252665B2 (en) 2012-08-28
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US20110065238A1 (en) 2011-03-17
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US20130228920A1 (en) 2013-09-05
TW201110222A (en) 2011-03-16
US8441136B2 (en) 2013-05-14

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